JP2017038039A - 太陽電池の高信頼性相互接続 - Google Patents
太陽電池の高信頼性相互接続 Download PDFInfo
- Publication number
- JP2017038039A JP2017038039A JP2016076940A JP2016076940A JP2017038039A JP 2017038039 A JP2017038039 A JP 2017038039A JP 2016076940 A JP2016076940 A JP 2016076940A JP 2016076940 A JP2016076940 A JP 2016076940A JP 2017038039 A JP2017038039 A JP 2017038039A
- Authority
- JP
- Japan
- Prior art keywords
- interconnect element
- solar cell
- interconnect
- pair
- bypass diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000003466 welding Methods 0.000 claims description 28
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000006059 cover glass Substances 0.000 claims description 4
- 229910000531 Co alloy Inorganic materials 0.000 claims description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000003491 array Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
101:第1端
102、103、104、105、106:部材
107、108:ボンディングパッド
110、120:部材
111、112、113、114、115、121、125:部分
122、123、124:相互接続コネクト部
130、131、132、133、134、137:平行ギャップアパーチャー
140、141、142、143、144:溶接点
150:平行ギャップ溶接ツール
200:第1コンポーネント(バイパスダイオード)
300:第2コンポーネント(太陽電池)
303、311、313:グリッド線
304、305、306、307、308、309:バスバー
314、315、316:接触パッド
304:金属層
340:金属下層
400:太陽電池
600:相互接続素子
615、625、640、650:部材
630、631、632、641、642、643:平行アパーチャー
651、652、653、654、655、656:部材接続部分
2000:スペースビヒクル
2001:太陽電池のアレイ
2003:柔軟なシート
2004:太陽電池
Claims (15)
- 太陽電池とそれに隣接する個別のバイパスダイオードとの間に相互接続を形成する方法において、
第1極性タイプの接触部が第1の周縁に沿って配置された上面と、第2極性タイプの接触部を含む後面とを備えた太陽電池(300,400)を準備し;
第1極性タイプの接触部を含む上面と、第2極性タイプの接触部を含む下面とを備えたバイパスダイオード(200)を準備し;
金属性の第1相互接続素子(100)を準備してそれを太陽電池及びバイパスダイオードに対して整列して、相互接続素子の一端が太陽電池の後面の一部分上に延び、且つ相互接続素子の反対端(101)がバイパスダイオードの後面の一部分上に延びるようにし;
第1相互接続素子を、バイパスダイオード(200)の後面の一部分上に延びる相互接続素子(100)の一端(101)にある一対の平行ギャップアパーチャー(130a/130b)の位置の第1溶接点でバイパスダイオードの後面に溶接し;
第1相互接続素子を、バイパスダイオードの後面の一部分上に延びる相互接続素子(100)の一端(101)にある一対の平行ギャップアパーチャー(131a/131b)の位置の第2溶接点でバイパスダイオードの後面に溶接し;
相互接続素子(100)を、太陽電池の後面の一部分上に延びる相互接続素子(100)の一端にある一対の平行ギャップアパーチャー(136a/136b)の位置の第1溶接点で太陽電池の後面の一部分に溶接し;及び
相互接続素子を、太陽電池の後面の一部分上に延びる相互接続素子(100)の一端にある一対の平行ギャップアパーチャー(137a/137b)の位置の第2溶接点で太陽電池の後面の一部分に溶接する;
ことを含む方法。 - 金属性の第2相互接続素子(600)を準備してそれを太陽電池(400)及びバイパスダイオード(200)に対して整列して、該第2相互接続素子の第1端が太陽電池(400)の上面の一部分上に延び、且つ第2相互接続素子の反対端がバイパスダイオード(200)の上面(201)の一部分上に延びるようにすることを更に含む、請求項1に記載の方法。
- 前記第2相互接続素子(600)を、太陽電池(400)の上面の一部分上に延びる前記第2相互接続素子(600)の第1端部にある一対の平行ギャップアパーチャー(636a/636b)の位置で太陽電池の上面に溶接することを更に含む、請求項2に記載の方法。
- 前記第2相互接続素子(600)を、バイパスダイオード(200)の上面(201)の一部分上に延びる前記第2相互接続素子(600)の第2の反対端部にある一対の平行ギャップアパーチャー(637a/637b)の位置でバイパスダイオード(200)の上面(201)に溶接することを更に含む、請求項2又は3に記載の方法。
- 太陽電池(400)の上面、バイパスダイオード(200)及び前記第2相互接続素子(600)の第1部分の上に、接着剤を使用してカバーガラスを接合することを更に含み、前記第2相互接続素子の第2部分は、カバーガラスの縁の外側に延びて、前記第2相互接続素子を隣接太陽電池(300)に接合できるようにする、請求項4に記載の方法。
- 前記第2相互接続素子(600)の第2部分は、前記第2相互接続素子の一端のコーナーに第1ボンディングパッドを、そして前記第2相互接続素子の第2の反対端のコーナーに第2ボンディングパッドを含む、請求項5に記載の方法。
- 前記第1ボンディングパッドは、前記第2相互接続素子の第1端のコーナーに一対の平行ギャップアパーチャー(630a/630b)を含み、そして前記第2ボンディングパッドは、前記第2相互接続素子の第2の反対端のコーナーに一対の平行ギャップアパーチャー(635a/635b)を含み、及び/又は前記第2相互接続素子(600)の第2部分は、前記第1ボンディングパッドに隣接した第3ボンディングパッドであって、前記第2相互接続素子の一端のコーナーに配置され且つ一対の平行ギャップアパーチャー(641a/641b)を含む第3ボンディングパッド;及び前記第2ボンディングパッドに隣接した第4ボンディングパッドであって、前記第2相互接続素子の第2の反対端のコーナーに配置され且つ一対の平行ギャップアパーチャー(646a/646b)を含む第4ボンディングパッド;を備えた請求項6に記載の方法。
- 隣接する第1コンポーネントをマウントするための一対の平行ギャップアパーチャー(130a/130b、131a/131b、132a/132b、133a/133b、134a/134b)を各々有する少なくとも3つの部材(102、103、104、105、106)を含む第1端(101);
隣接する第2コンポーネントをマウントするための一対の平行ギャップアパーチャー(136a/136b、137a/137b)を各々有する少なくとも2つの部材(110、120)を含む第2の反対端;及び
相互接続素子の前記第1端(101)を相互接続素子の前記第2端に取り付けるための1つ以上の相互接続コネクト部(111、121);
を備えた相互接続素子。 - 前記第1端は、隣接する第1コンポーネントをマウントするための一対の平行ギャップアパーチャーを各々有する少なくとも4つの部材(101、103、104、105、106)を含む、請求項8に記載の相互接続素子。
- 前記第1端は、隣接する第1コンポーネントをマウントするための一対の平行ギャップアパーチャーを各々有する少なくとも5つの部材(101、103、104、105、106)を含む、請求項8又は9に記載の相互接続素子。
- 前記相互接続素子の第1端を前記相互接続素子の第2端に取り付けるための1つ以上の相互接続コネクト部(111、121)は、カーブしている、請求項8から10のいずれかに記載の相互接続素子。
- 隣接する第1コンポーネントをマウントするための三対の平行ギャップアパーチャーを各々2セット有する少なくとも2つの部材(640、650)を含む第1端であって、その少なくとも2つの部材は、1つ以上の部材接続部(651、652、653、654、655、656)により互いに取り付けられるような第1端;
隣接する第2コンポーネントをマウントするための一対の平行ギャップアパーチャーを各々有する少なくとも2つの部材(615、625)を含む第2の反対端;及び
相互接続素子の前記第1端を相互接続素子の前記第2端に取り付けるための1つ以上の相互接続コネクト部(612、613、671、672);
を備えた相互接続素子(600)。 - 2つ以上の部材を互いに取り付けるための1つ以上の部材接続部(651、652、653、654、655、656)は、カーブしており、及び/又は相互接続素子の第1端を相互接続素子の第2端に取り付けるための前記1つ以上の相互接続コネクト部(612、613、671、672)は、カーブしている、請求項12に記載の相互接続素子。
- 前記隣接する第1コンポーネントは、バイパスダイオード(200)であり、そして前記隣接する第2コンポーネントは、太陽電池(300、400)である、請求項8から13のいずれかに記載の相互接続素子。
- 前記相互接続素子(600)は、ニッケル・コバルト合金鉄より成る、請求項8から14のいずれかに記載の相互接続素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/821,113 US20170040479A1 (en) | 2015-08-07 | 2015-08-07 | Reliable interconnection of solar cells |
US14/821,113 | 2015-08-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017038039A true JP2017038039A (ja) | 2017-02-16 |
JP2017038039A5 JP2017038039A5 (ja) | 2019-03-14 |
Family
ID=55349698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016076940A Pending JP2017038039A (ja) | 2015-08-07 | 2016-04-07 | 太陽電池の高信頼性相互接続 |
Country Status (3)
Country | Link |
---|---|
US (3) | US20170040479A1 (ja) |
EP (1) | EP3128559A1 (ja) |
JP (1) | JP2017038039A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11128021B2 (en) | 2017-12-11 | 2021-09-21 | Samsung Sdi Co., Ltd. | Battery pack with curved connection portion |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170040479A1 (en) | 2015-08-07 | 2017-02-09 | Solaero Technologies Corp. | Reliable interconnection of solar cells |
KR101824523B1 (ko) * | 2017-01-11 | 2018-02-01 | 엘지전자 주식회사 | 태양 전지 모듈 및 이를 구비하는 휴대용 충전기 |
USD845889S1 (en) | 2018-01-16 | 2019-04-16 | Solaero Technologies Corp. | Flexible interconnecting member for solar cells |
US10529881B2 (en) | 2018-03-01 | 2020-01-07 | Solaero Technologies Corp. | Interconnect member |
EP3550615B1 (en) * | 2018-04-04 | 2023-03-01 | SolAero Technologies Corp. | Interconnect member |
USD855561S1 (en) * | 2018-06-04 | 2019-08-06 | Solaero Technologies Corp. | Flexible interconnecting member for solar cells |
USD856272S1 (en) * | 2018-06-04 | 2019-08-13 | Solaero Technologies Corp. | Flexible interconnecting member for solar cells |
JP7478732B2 (ja) * | 2019-07-10 | 2024-05-07 | 住友電工プリントサーキット株式会社 | フレキシブルプリント配線板及び電池配線モジュール |
US11495701B2 (en) * | 2020-05-26 | 2022-11-08 | The Boeing Company | Conductive interconnect for connecting adjacent solar cells in a solar cell assembly |
CN111900225B (zh) * | 2020-06-30 | 2021-11-16 | 上海空间电源研究所 | 一种空间太阳电池阵互连结构、太阳电池阵及其成型方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07142205A (ja) * | 1993-11-15 | 1995-06-02 | Murata Mfg Co Ltd | 正特性サーミスタ装置 |
JP2000323208A (ja) * | 1999-03-10 | 2000-11-24 | Sharp Corp | インターコネクタ、その形成方法およびその接合装置 |
JP2001030999A (ja) * | 1999-07-01 | 2001-02-06 | Space Syst Loral Inc | ソーラセルアセンブリ |
US6359209B1 (en) * | 2000-02-23 | 2002-03-19 | Hughes Electronics Corporation | Solar panel and solar cell having in-plane solar cell interconnect with integrated diode tab |
WO2002054501A1 (en) * | 2000-12-28 | 2002-07-11 | Mitsubishi Denki Kabushiki Kaisha | Solar battery |
JP2003048073A (ja) * | 2001-07-31 | 2003-02-18 | Sharp Corp | 平面型半導体装置の生産装置およびその生産装置を用いた平面型半導体装置の製造方法 |
JP2013138109A (ja) * | 2011-12-28 | 2013-07-11 | Mitsubishi Electric Corp | ダイオード組込み太陽電池 |
JP2013214599A (ja) * | 2012-04-02 | 2013-10-17 | Sharp Corp | インターコネクタ付き薄膜化合物太陽電池の製造方法、薄膜化合物太陽電池ストリングの製造方法、および、薄膜化合物太陽電池アレイの製造方法 |
JP2015058468A (ja) * | 2013-09-20 | 2015-03-30 | 日本電気株式会社 | 接合構造及び接合方法、金属リード |
US20150144173A1 (en) * | 2013-11-27 | 2015-05-28 | Space Systems/Loral, Llc | Integral corner bypass diode interconnecting configuration for multiple solar cells |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5430616A (en) * | 1992-09-08 | 1995-07-04 | Sharp Kabushiki Kaisha | Interconnector and electronic device element with the interconnector |
US6278054B1 (en) | 1998-05-28 | 2001-08-21 | Tecstar Power Systems, Inc. | Solar cell having an integral monolithically grown bypass diode |
GB2341273A (en) | 1998-09-04 | 2000-03-08 | Eev Ltd | Solar cell arrangements |
JP2002343994A (ja) * | 2001-05-11 | 2002-11-29 | Mitsubishi Electric Corp | 太陽電池の製造方法及びその装置 |
DE102004044061A1 (de) * | 2004-09-11 | 2006-04-20 | Rwe Space Solar Power Gmbh | Solarzellenanordung sowie Verfahren zum Verschalten eines Solarzellenstrings |
US7732705B2 (en) * | 2005-10-11 | 2010-06-08 | Emcore Solar Power, Inc. | Reliable interconnection of solar cells including integral bypass diode |
US8148627B2 (en) * | 2006-08-25 | 2012-04-03 | Sunpower Corporation | Solar cell interconnect with multiple current paths |
JP4819004B2 (ja) | 2007-08-10 | 2011-11-16 | シャープ株式会社 | 太陽電池アレイおよび太陽電池モジュール |
US20100012175A1 (en) | 2008-07-16 | 2010-01-21 | Emcore Solar Power, Inc. | Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells |
KR101612955B1 (ko) * | 2009-06-17 | 2016-04-15 | 엘지전자 주식회사 | 인터커넥터 및 이를 구비한 태양 전지 모듈 |
WO2011028630A2 (en) * | 2009-08-26 | 2011-03-10 | Robert Stancel | Assembly for electrical breakdown protection for high current, non-elongate solar cells with electrically conductive substrates |
USD665338S1 (en) | 2012-03-16 | 2012-08-14 | Emcore Solar Power, Inc. | Metal interconnecting member for solar cells |
USD665339S1 (en) | 2012-03-16 | 2012-08-14 | Emcore Solar Power, Inc. | Metal interconnecting member for solar cells |
US8636198B1 (en) * | 2012-09-28 | 2014-01-28 | Sunpower Corporation | Methods and structures for forming and improving solder joint thickness and planarity control features for solar cells |
US20140124014A1 (en) | 2012-11-08 | 2014-05-08 | Cogenra Solar, Inc. | High efficiency configuration for solar cell string |
TWI706945B (zh) | 2013-03-01 | 2020-10-11 | 美商基利科學股份有限公司 | 供治療反轉錄病毒科病毒感染之治療性化合物 |
US20150280044A1 (en) | 2014-04-01 | 2015-10-01 | Solaero Technologies Corp. | Space solar array module and method for fabricating the same |
US20160218665A1 (en) | 2015-01-22 | 2016-07-28 | Solaero Technologies Corp. | Space solar cell panel with blocking diodes |
USD777659S1 (en) | 2015-05-08 | 2017-01-31 | Solaero Technologies Corp. | Metal interconnecting member for solar cells |
USD777660S1 (en) | 2015-05-12 | 2017-01-31 | Solaero Technologies Corp. | Metal interconnecting member for solar cells |
US20170040479A1 (en) | 2015-08-07 | 2017-02-09 | Solaero Technologies Corp. | Reliable interconnection of solar cells |
-
2015
- 2015-08-07 US US14/821,113 patent/US20170040479A1/en not_active Abandoned
-
2016
- 2016-02-09 EP EP16154931.6A patent/EP3128559A1/en not_active Withdrawn
- 2016-04-07 JP JP2016076940A patent/JP2017038039A/ja active Pending
-
2017
- 2017-05-02 US US15/584,847 patent/US10658533B2/en active Active
-
2019
- 2019-10-08 US US16/595,784 patent/US11329176B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07142205A (ja) * | 1993-11-15 | 1995-06-02 | Murata Mfg Co Ltd | 正特性サーミスタ装置 |
JP2000323208A (ja) * | 1999-03-10 | 2000-11-24 | Sharp Corp | インターコネクタ、その形成方法およびその接合装置 |
JP2001030999A (ja) * | 1999-07-01 | 2001-02-06 | Space Syst Loral Inc | ソーラセルアセンブリ |
US6359209B1 (en) * | 2000-02-23 | 2002-03-19 | Hughes Electronics Corporation | Solar panel and solar cell having in-plane solar cell interconnect with integrated diode tab |
WO2002054501A1 (en) * | 2000-12-28 | 2002-07-11 | Mitsubishi Denki Kabushiki Kaisha | Solar battery |
JP2003048073A (ja) * | 2001-07-31 | 2003-02-18 | Sharp Corp | 平面型半導体装置の生産装置およびその生産装置を用いた平面型半導体装置の製造方法 |
JP2013138109A (ja) * | 2011-12-28 | 2013-07-11 | Mitsubishi Electric Corp | ダイオード組込み太陽電池 |
JP2013214599A (ja) * | 2012-04-02 | 2013-10-17 | Sharp Corp | インターコネクタ付き薄膜化合物太陽電池の製造方法、薄膜化合物太陽電池ストリングの製造方法、および、薄膜化合物太陽電池アレイの製造方法 |
JP2015058468A (ja) * | 2013-09-20 | 2015-03-30 | 日本電気株式会社 | 接合構造及び接合方法、金属リード |
US20150144173A1 (en) * | 2013-11-27 | 2015-05-28 | Space Systems/Loral, Llc | Integral corner bypass diode interconnecting configuration for multiple solar cells |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11128021B2 (en) | 2017-12-11 | 2021-09-21 | Samsung Sdi Co., Ltd. | Battery pack with curved connection portion |
Also Published As
Publication number | Publication date |
---|---|
US10658533B2 (en) | 2020-05-19 |
US20200044103A1 (en) | 2020-02-06 |
US11329176B2 (en) | 2022-05-10 |
EP3128559A1 (en) | 2017-02-08 |
US20170236960A1 (en) | 2017-08-17 |
US20170040479A1 (en) | 2017-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2017038039A (ja) | 太陽電池の高信頼性相互接続 | |
US11817523B2 (en) | Automated assembly and mounting of solar cells on space panels | |
US10283662B2 (en) | Parallel interconnection of neighboring solar cells with dual common back planes | |
US20140102505A1 (en) | Photovoltaic laminate segments and segmented photovoltaic modules | |
US20210091247A1 (en) | Interconnection of solar cell modules | |
US20150364631A1 (en) | Solar cell module with interconnection of neighboring solar cells on a common back plane | |
US10978602B2 (en) | Solar cell module interconnection of solar cells on conductive layers of a polymide support | |
US20180069143A1 (en) | Parallel interconnection of neighboring solar cells via a common back plane | |
US9608156B2 (en) | Assembly and mounting of solar cells on space panels | |
KR20200134328A (ko) | 양면 광전지 모듈 | |
EP3809471B1 (en) | Automated assembly and mounting of solar cells on space panels | |
US11282969B2 (en) | Back contact solar cell assemblies | |
US11728452B2 (en) | Solar cell module on flexible supporting film | |
US10529881B2 (en) | Interconnect member | |
Yu et al. | High‐Efficiency Multi‐Cell TPV Module Fabrication and Performance |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190131 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190131 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200109 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200409 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200609 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200909 |