JP2017034213A - Resin composition for solder resist, resin film with carrier, wiring board, electronic device and method for manufacturing electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin composition for a solder resist, which gives a solder resist film excellent in insulating property, a resin film with a carrier, a wiring board, an electronic device and a method for manufacturing an electronic device.SOLUTION: The resin composition for a solder resist of the present invention comprises a thermosetting resin, an inorganic filler and a black pigment, in which the black pigment comprises black titanium oxide; and the resin composition is used for forming a black solder resist.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a resin composition for solder resist, a resin film with a carrier, a wiring board, an electronic device, and a method for manufacturing the electronic device.

  In recent years, carbon black has been added to a solder resist ink composition for the purpose of increasing the radiation rate in the infrared region. There exists a thing of patent document 1 as this kind of technique. This document describes that the use of carbon black can improve the heat dissipation of the substrate surface.

JP 2010-59222 A

  However, as a result of examination by the inventors, it has been found that there is room for improvement in insulation in the technique described in the above-mentioned document using carbon black.

  The inventors of the present application have further studied and found that black titanium oxide is excellent in insulating properties among black pigments. As a result of further earnest research based on these findings, a new method for enhancing the dispersibility of black titanium oxide was found, which led to the stable obtaining of a solder resist film having excellent insulating properties. The invention has been completed.

According to the present invention, a thermosetting resin;
Inorganic fillers;
A solder resist resin composition comprising a black pigment,
A solder resist resin composition used for a black solder resist, in which the black pigment contains black titanium oxide, is provided.

According to the present invention, a carrier substrate;
A resin film disposed on the carrier substrate,
There is provided a resin film with a carrier, wherein the resin film comprises the solder resist resin composition.

According to the present invention, a substrate;
A conductive circuit formed on the substrate;
A solder resist film formed on the outermost layer of the substrate,
The wiring board which uses the said resin composition for solder resists as the said soldering resist film is provided.

According to the present invention, the wiring board;
An electronic device mounted on the wiring board,
Among the solder resist films constituting the outermost layer of the wiring board, the solder resist film disposed on the surface opposite to the surface on which the electronic element is mounted is obtained by using the solder resist resin composition. An electronic device is provided.

According to the present invention, a step of preparing a substrate having a conductive circuit formed on one surface;
Placing a resin film on the substrate;
Forming an opening in the resin film to expose the conductive circuit;
Forming a solder resist film by heat-treating the resin film;
Electrically connecting an electronic element with the conductive circuit exposed in the opening;
Sealing the electronic element,
An electronic device manufacturing method is provided in which the resin film uses the solder resist resin composition.

  ADVANTAGE OF THE INVENTION According to this invention, the resin composition for solder resists from which the soldering resist film excellent in insulation is obtained, the resin film with a carrier, a wiring board, an electronic device, and the manufacturing method of an electronic device are provided.

It is a schematic diagram which shows the example of the structure of the wiring board in embodiment. It is a cross-sectional schematic diagram which shows an example of the structure of the semiconductor package which concerns on embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

The outline | summary of the resin composition for soldering resists concerning this embodiment is demonstrated.
The resin composition for solder resists of this embodiment can contain a thermosetting resin, an inorganic filler, and a black pigment. The black pigment can include black titanium oxide. The resin composition for a solder resist of the present embodiment can be used for a black solder resist.

  The inventor of the present application examined a method for dispersing black titanium oxide having excellent insulation resistance. For example, by using ultrasonic treatment, black titanium oxide can be dispersed very well in a varnish-like resin composition. The finding that it was possible was found. Further, it has been found that black titanium oxide is stably colored by high dispersion. Further examination based on these findings revealed that it is possible to obtain a solder resist film having excellent insulating properties while being colored black by using black titanium oxide in the resin composition for solder resist. The headline and the present invention were completed.

  According to this embodiment, it is possible to implement | achieve the black soldering resist film excellent in insulation by the structure in which the resin composition for soldering resist contains black titanium oxide. Such a solder resist film can have a structure excellent in the printing performance of a laser such as a YAG laser. Moreover, the wiring board and electronic device using the solder resist film of the present embodiment can have a highly reliable structure. Further, a black solder resist film can be used for the outermost layer of the wiring board on the opposite side on which the electronic element is mounted. Thereby, the aesthetics of a wiring board and an electronic device can be improved.

[Resin composition for solder resist]
The solder resist resin composition of this embodiment will be described in detail below.
The solder resist resin composition of the present embodiment is a varnish-like resin composition. The resin sheet of this embodiment can be obtained by making the said resin composition for solder resists into a film form. By curing such a resin sheet, a solder resist film is obtained. Moreover, you may obtain a soldering resist film by hardening the coating film of the resin composition for soldering resists.

  As the solder resist resin composition of this embodiment, a thermosetting resin composition containing a thermosetting resin can be used. The thermosetting resin is not particularly limited. For example, phenol resin, resin having a benzoxazine ring, epoxy resin, acrylic resin, melamine resin, unsaturated polyester resin, maleimide resin, polyurethane resin, diallyl phthalate resin, silicone Examples thereof include resins, cyanate resins, and resins having a methacryloyl group. For example, the thermosetting resin may be a liquid resin that is liquid at room temperature (25 ° C.). These can be used alone or in combination of two or more. In the present embodiment, the thermosetting resin preferably includes an epoxy resin.

(Epoxy resin (A))
The epoxy resin (A) according to this embodiment includes, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, bisphenol S type epoxy resin, bisphenol M type epoxy resin (4,4 ′-(1 , 3-phenylenediisopridiene) bisphenol type epoxy resin), bisphenol P type epoxy resin (4,4 ′-(1,4-phenylenediisopridiene) bisphenol type epoxy resin), bisphenol Z type epoxy resin (4 , 4'-cyclohexyldiene bisphenol type epoxy resin), etc .; phenol novolac type epoxy resin, cresol novolac type epoxy resin, tetraphenol group ethane type novolac type epoxy resin, condensed ring aromatic hydrocarbon structure Novolak type epoxy resins such as novolak type epoxy resins, biphenyl type epoxy resins, xylylene type epoxy resins, aralkyl type epoxy resins such as biphenyl aralkyl type epoxy resins, naphthylene ether type epoxy resins, naphthol type epoxy resins, naphthalenediol type Epoxy resins having a naphthalene skeleton such as epoxy resins, bifunctional to tetrafunctional epoxy type naphthalene resins, binaphthyl type epoxy resins, naphthalene aralkyl type epoxy resins, naphthalene modified cresol novolac type epoxy resins; anthracene type epoxy resins; phenoxy type epoxy resins; Dicyclopentadiene type epoxy resin; norbornene type epoxy resin; adamantane type epoxy resin; one kind selected from fluorene type epoxy resin It can contain two or more. Among these, it is more preferable to include an epoxy resin having a naphthalene skeleton from the viewpoint of improving the embedding property of the solder resist film and the surface smoothness. Thereby, the low linear expansion and high elastic modulus of the solder resist film can be achieved. It is also possible to improve the workability by improving the rigidity of the wiring board, and to improve the reflow resistance and suppress the warpage in the semiconductor package. From the viewpoint of improving the embedding property of the solder resist film, it is particularly preferable to include an epoxy resin having a tri- or higher functional naphthalene skeleton.

  In this embodiment, it is mentioned as an example of a preferable aspect that the epoxy resin shown to the following formula | equation (1) is included as an epoxy resin (A).

（式（１）中、ｎは０〜１０の整数であり、Ｒ_１およびＲ_２は互いに独立して水素原子、炭素数１〜６のアルキル基、または炭素数１〜６のアルコキシ基である）

(In the formula (1), n is an integer of 0, _{R 1} and _{R 2} independently of one another are hydrogen atom, is an alkyl group or an alkoxy group having 1 to 6 carbon atoms, 1 to 6 carbon atoms )

  In the present embodiment, the content of the epoxy resin (A) is, for example, preferably 3% by weight or more, and more preferably 5% by weight or more based on the total solid content of the resin composition for solder resist. By making content of an epoxy resin (A) more than the said lower limit, it can contribute to the improvement of the embedding property and smoothness of the soldering resist film formed using the resin composition for soldering resists. On the other hand, the content of the epoxy resin (A) is preferably 40% by weight or less, and more preferably 35% by weight or less, for example, based on the total solid content of the resin composition for solder resist. By making content of an epoxy resin (A) below the said upper limit, the heat resistance and moisture resistance of a solder resist film formed using the resin composition for solder resists can be aimed at. In addition, the total solid content of the resin composition for solder resist refers to the whole component except the solvent contained in the resin composition for solder resist. The same applies hereinafter.

(Filler (B))
The resin composition for solder resists of this embodiment may further contain a filler.
An inorganic filler can be used as the filler according to the present embodiment. Examples of the inorganic filler include, but are not limited to, silicates such as talc, calcined clay, unfired clay, mica, and glass; oxides such as titanium oxide, alumina, boehmite, silica, and fused silica; calcium carbonate Carbonates such as magnesium carbonate and hydrotalcite; hydroxides such as aluminum hydroxide, magnesium hydroxide and calcium hydroxide; sulfates or sulfites such as barium sulfate, calcium sulfate and calcium sulfite; zinc borate and metaborates Borates such as barium oxide, aluminum borate, calcium borate and sodium borate; nitrides such as aluminum nitride, boron nitride, silicon nitride and carbon nitride; titanates such as strontium titanate and barium titanate Can be mentioned. Among these, talc, alumina, glass, silica, mica, aluminum hydroxide, and magnesium hydroxide are preferable.

  Although the silica which concerns on this embodiment is not specifically limited, For example, you may contain at least one of spherical silica and crushing silica. From the viewpoint of improving the embedding property and surface smoothness of the solder resist film, it is more preferable to include spherical silica. The silica may be, for example, fused spherical silica.

The lower limit of the average particle diameter _{D 50} of the filler is not particularly limited, is preferably at least 0.01 [mu] m, more preferably not less than 0.05 .mu.m. The upper limit of the average particle diameter _{D 50} of the filler is not particularly limited, is preferably from 5.0 .mu.m, more preferably 2.0μm or less, more preferably 1.0μm or less.

As the silica include, but are not limited to an average particle size _{D 50} in particular, for example, an average particle diameter _{D 50} may be used fine particles of silica is 2nm or 100nm or less. Thereby, the embedding property and surface smoothness of a solder resist film can be improved more effectively. In the present embodiment, the particulate silica having an average particle diameter _{D 50} is 2nm or 100nm or less, that the average particle diameter _{D 50} comprises a 100nm excess of silica, together in the resin composition for a solder mask, filling properties And an example of a preferred embodiment for improving surface smoothness.

The average particle diameter _{D 50} of the filler is for example a laser diffraction particle size distribution analyzer (HORIBA Ltd., LA-500) can be measured using a. In the present embodiment, the filler may include one kind or two or more kinds.

  Moreover, when preparing the resin composition for a solder resist, it is more preferable to use, for example, a silica raw material having a silica concentration of 10 wt% or more and 90 wt% or less as silica. From the viewpoint of improving the mechanical strength of the wiring board, it is particularly preferable to use a silica raw material having a silica concentration of 50% by weight or more and 90% by weight or less, for example. Further, from the viewpoint of suppressing the deflection of the wiring board and improving the moisture absorption reliability of the semiconductor device, for example, a silica raw material having a silica concentration of 50 wt% to 90 wt% and a silica concentration of 10 wt% to 50 wt%. It is particularly preferable to use a silica raw material that is not more than%.

  For example, the content of the filler is preferably 30% by weight or more, and more preferably 50% by weight or more based on the total solid content of the resin composition for a solder resist. By making content of a filler into the said lower limit or more, the heat resistance and moisture resistance of the soldering resist film obtained using the soldering resist resin composition can be improved effectively. It is also possible to contribute to the reduction of warpage of the resulting semiconductor package by lowering the linear expansion and increasing the elastic modulus of the solder resist film. On the other hand, the content of the filler is, for example, preferably 90% by weight or less, and more preferably 85% by weight or less, based on the total solid content of the resin composition for solder resist. By making the content of the filler not more than the above upper limit value, it becomes possible to more effectively improve the embedding property of the solder resist film.

(Cyanate resin (C))
The resin composition for solder resists of this embodiment can further contain cyanate resin (C). As a result, the solder resist film can be reduced in linear expansion and improved in elastic modulus and rigidity. It is also possible to contribute to improvement of heat resistance and moisture resistance of the obtained semiconductor device.

The cyanate resin (C) according to this embodiment is a resin having a cyanate group (—O—CN) in the molecule, and a resin having two or more cyanate groups in the molecule can be used. Although it does not specifically limit as said cyanate resin, For example, dicyclopentadiene type cyanate ester resin, phenol novolak type cyanate ester resin, novolak type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, tetramethylbisphenol F type Examples thereof include bisphenol type cyanate resins such as cyanate resins, and naphthol aralkyl type cyanate resins.
The cyanate resin is not particularly limited, and can be obtained, for example, by reacting a cyanogen halide compound with phenols or naphthols. Examples of such cyanate resins include cyanate resins obtained by reaction of phenol novolac type polyhydric phenols with cyanogen halide, and cyanates obtained by reaction of cresol novolac type polyhydric phenols with cyanogen halide. And a cyanate resin obtained by a reaction of a naphthol aralkyl type polyvalent naphthol with a cyanogen halide. You may use the said cyanate resin 1 type or in combination of 2 or more types.
Among these, from the viewpoint of lowering the linear expansion of the solder resist film and improving the modulus of elasticity and rigidity, it is more likely to contain a phenol novolak type cyanate resin, dicyclopentadiene type cyanate ester resin, or naphthol aralkyl type cyanate resin. It is particularly preferable to include a phenol novolac-type cyanate resin.

  The content of the cyanate resin (C) is, for example, preferably 3% by weight or more and more preferably 5% by weight or more with respect to the total solid content of the resin composition for solder resist. By making the content of the cyanate resin (C) equal to or higher than the above lower limit, more effective low linear expansion and high elastic modulus of the solder resist film formed using the solder resist resin composition are achieved. Can do. Moreover, it can contribute to the improvement of embedding property and smoothness. On the other hand, it is preferable that content of cyanate resin (C) is 40 weight% or less with respect to the total solid of the resin composition for solder resists, for example, and it is more preferable that it is 35 weight% or less. By making content of cyanate resin (C) below the said upper limit, the heat resistance and moisture resistance of a solder resist film formed using the resin composition for solder resists can be aimed at.

(Curing accelerator (D))
The resin composition for solder resists of this embodiment can further contain, for example, a curing accelerator (D). Thereby, the sclerosis | hardenability of the resin composition for solder resists can be improved.

  As a hardening accelerator (D) which concerns on this embodiment, what accelerates | stimulates hardening reaction of an epoxy resin (A) can be used, The kind in particular is not limited. Although it does not specifically limit as hardening accelerator (D) of this embodiment, For example, zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, zinc octylate, bisacetylacetonate cobalt (II), tris Organic metal salts such as acetylacetonate cobalt (III), tertiary amines such as triethylamine, tributylamine, diazabicyclo [2,2,2] octane, tetraphenylphosphonium / tetraphenylborate (TPP-K), tetraphenylphosphonium -Quaternary phosphonium compounds such as tetrakis (4-methylphenyl) borate (TPP-MK), 2-phenyl-4-methylimidazole, 2-ethyl-4-ethylimidazole, 2-phenyl-4-ethylimidazole, 2-Phenyl-4-me Imidazoles such as ru-5-hydroxyimidazole, 2-phenyl-4,5-dihydroxyimidazole, phenolic compounds such as phenol, bisphenol A, nonylphenol, organic acids such as acetic acid, benzoic acid, salicylic acid, paratoluenesulfonic acid, and One or more selected from onium salt compounds can be included. Among these, it is more preferable to include an onium salt compound from the viewpoint of more effectively improving curability.

  Although the onium salt compound used as the said hardening accelerator (D) is not specifically limited, For example, the compound represented by following General formula (2) can be used.

（式（２）中、Ｐはリン原子、Ｒ^３、Ｒ^４、Ｒ^５およびＲ^６は、それぞれ、置換もしくは無置換の芳香環または複素環を有する有機基、あるいは置換もしくは無置換の脂肪族基を示し、互いに同一であっても異なっていてもよい。Ａ⁻は分子外に放出しうるプロトンを少なくとも１個以上分子内に有するｎ（ｎ≧１）価のプロトン供与体のアニオン、またはその錯アニオンを示す）

(In formula (2), P is a phosphorus atom, R ³ , R ⁴ , R ⁵ and R ⁶ are each an organic group having a substituted or unsubstituted aromatic ring or heterocyclic ring, or a substituted or unsubstituted aliphatic group. Each of which may be the same as or different from each other, and A ⁻ represents an anion of an n-valent proton donor having at least one proton that can be released to the outside of the molecule in the molecule, or Indicates the complex anion)

  The content of the curing accelerator (D) is, for example, preferably 0.1% by weight or more, and more preferably 0.3% by weight or more based on the total solid content of the resin composition for solder resist. . By making content of a hardening accelerator (D) more than the said lower limit, the sclerosis | hardenability of the resin composition for solder resists can be improved more effectively. On the other hand, the content of the curing accelerator (D) is, for example, preferably 10% by weight or less, and more preferably 5% by weight or less based on the total solid content of the resin composition for solder resist. By making content of a hardening accelerator (D) below the said upper limit, the preservability of the resin composition for soldering resists can be improved.

(Black titanium oxide)
The black titanium oxide according to the present embodiment means titanium suboxide in which oxygen atoms are insufficient with respect to titanium atoms as compared with TiO ₂ .
The black titanium oxide of the present embodiment is not necessarily limited as long as it has oxygen defects, but may be represented by a general formula of TiO _x (where X is a real number and represents 1 or more and less than 2). it can. In the present embodiment, the lower limit value of X is, for example, preferably 1 or more, more preferably 1.2 or more, and further preferably 1.5 or more. The upper limit of X is, for example, preferably less than 2, more preferably 1.9 or less, and even more preferably 1.85 or less. By making X above the lower limit value or more, the insulating property of the solder resist film can be enhanced. Moreover, the dispersibility of the black titanium oxide in the resin composition for solder resists can be improved. On the other hand, by setting X to the upper limit value or less, it is possible to improve the marking performance of a laser such as a YAG laser. Specific examples of the black titanium oxide of the present embodiment is not particularly limited, for _{example, Ti 2 O 3, Ti 4} O 7, Ti 5 O 9, and _Ti 6 _{O 11} and the like. Black pigments of the present embodiment, as a black titanium oxide _may include at least one of _{Ti 4 O 7, Ti 5 O} 9, and _Ti 6 _{O 11.}

The lower limit of the average particle diameter _{D 50} of the black titanium oxide is not particularly limited, for example, is preferably at least 0.1 [mu] m, more preferably at least 0.2 [mu] m, and even more preferably 0.3 [mu] m. The upper limit of the average particle diameter _{D 50} is not particularly limited, for example, preferably 2.0μm or less, more preferably 1.9 .mu.m or less, and more preferably 1.8 .mu.m. The average particle diameter D ₅₀ of the black titanium oxide by the above-described lower limit, it is possible to improve the insulation of the solder resist film. The average particle diameter D ₅₀ of the black titanium oxide by the above-described upper limit or less, it is possible to improve the dispersibility of the black titanium oxide. Method of measuring the average particle diameter D ₅₀ is, for example, may be similar to that of the filler.

The lower limit of the content of the black titanium oxide is not particularly limited with respect to the total solid content of the solder resist resin composition, but is preferably 1% by weight or more, more preferably 2% by weight or more, for example. More preferably by weight. The upper limit of the content of the black titanium oxide is not particularly limited with respect to the total solid content of the solder resist resin composition, but is preferably 10% by weight or less, more preferably 9% by weight or less. 8% by weight or less is more preferable. By setting the content of black titanium oxide to the above lower limit value or more, the insulating property of the solder resist film can be improved. Further, the heat resistance of the solder resist film can be increased. Furthermore, the laser marking property can be improved. The dispersibility of black titanium oxide can be improved by setting the content of black titanium oxide to the upper limit value or less.
Here, in the present embodiment, the content of the black titanium oxide is not included in the content of the black pigment and the colorant, but is defined as included in the content of the filler. That is, the content of the filler indicates the total value of the content of the inorganic filler and the content of black titanium oxide.

  In this embodiment, the said black titanium oxide in the varnish of a thermosetting resin can be favorably disperse | distributed by ultrasonic treatment, for example. For example, the dispersibility of the black titanium oxide is evaluated by dispersing and preparing the black titanium oxide in a thermosetting resin varnish, and confirming the degree of reaggregation of the black titanium oxide in the varnish after a predetermined time has elapsed. be able to.

  In the present embodiment, the method for producing the black titanium oxide is not particularly limited. For example, titanium dioxide powder and metal titanium powder, titanium dioxide powder and titanium hydride powder, titanium dioxide powder, metal titanium powder, and titanium hydride powder. Alternatively, titanium suboxide can be obtained by heating and reducing a mixed powder of titanium dioxide powder and sodium borohydride in an inert atmosphere or a vacuum atmosphere. Although heating temperature will not be specifically limited if it melt | dissolves, For example, it is 300 to 950 degreeC, 400 to 800 degreeC etc. are used. The heating time can be adjusted as appropriate. Titanium dioxide as a raw material may be produced by any method of sulfuric acid method and chlorine method, and the crystal type may be any of anatase type, rutile type or brookite type.

  The X can be adjusted by changing the blending ratio of the titanium dioxide powder and the other powder in the mixed powder. Moreover, the particle diameter of the titanium dioxide powder and the particle diameter of the black titanium oxide can be adjusted by pulverizing the obtained titanium suboxide.

  In addition to black titanium oxide, the black pigment of the present embodiment can contain other general black pigments as long as the insulation of the solder resist film of the present embodiment does not cause a problem with respect to the required specifications. . For example, the black pigment may be black titanium oxide, carbon black, pitch, perylene colorant, or the like. Moreover, you may use these 1 type, or 2 or more types. By including a black pigment other than black titanium oxide, the L * value can be further reduced. Moreover, heat resistance can be maintained compared with the case where a black dye is used. Further, as a result of the study by the present inventors, for example, by using ultrasonic treatment, it is possible to make the dispersibility of black titanium oxide in the varnish very high as compared with the perylene-based colorant. It turns out.

(E) Colorant The resin composition for solder resists of this embodiment can further contain colorants (E) other than the said black pigment, for example. The colorant (E) of the present embodiment includes one or more selected from dyes such as green, red, blue, yellow, and black, pigments (excluding black pigments), and pigments. Among these, from the viewpoint of improving the visibility of the opening and the like, a green colorant can be included, but a green dye may be included. The green colorant may include one or more known colorants such as anthraquinone, phthalocyanine, and perylene.

  Examples of the black dye include azo-based metal complex black dyes and organic black dyes such as anthraquinone compounds. Although it does not specifically limit as the said black dye, For example, Kayase Black AN (made by Nippon Kayaku Co., Ltd.), Kayase Black G (made by Nippon Kayaku Co., Ltd.), etc. are mentioned. In this embodiment, you may use 1 type, or 2 or more types of black pigments.

  The lower limit of the content of the black dye is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, based on the total solid content of the resin composition for a solder resist. It is particularly preferably 0.07% by weight or more. The marking performance of a laser such as a YAG laser for the solder resist film can be improved. The upper limit of the content of the black dye is preferably 1.0% by weight or less, more preferably 0.9% by weight or less, based on the total solid content of the resin composition for a solder resist. More preferably, it is 0.8 wt% or less. This makes it possible to realize a solder resist film colored other than black.

  The total content of the colorant (E) is, for example, preferably 0.05% by weight or more, and more preferably 0.1% by weight or more based on the total solid content of the resin composition for solder resist. More preferred. By making content of a coloring agent (E) more than the said lower limit, the visibility and concealment of the opening part of the soldering resist film obtained using the resin composition for soldering resists can be improved more effectively. it can. On the other hand, the total content of the colorant (E) is, for example, preferably 5% by weight or less, more preferably 3% by weight or less based on the total solid content of the resin composition for solder resist. . By making content of a coloring agent (E) below the said upper limit, it becomes possible to improve the sclerosis | hardenability etc. of the resin composition for solder resists more effectively.

(Other ingredients (F))
In addition to the above components, the solder resist resin composition of the present embodiment includes a coupling agent, a leveling agent, a curing agent, a photosensitizer, an antifoaming agent, an ultraviolet absorber, a foaming agent, and an antioxidant as necessary. One or two or more additives selected from flame retardants and ion scavengers may be added.

  Examples of the coupling agent include silane coupling agents such as epoxy silane coupling agents, cationic silane coupling agents, and amino silane coupling agents, titanate coupling agents, and silicone oil type coupling agents. Examples of the leveling agent include acrylic copolymers. Although content of the said coupling agent is not specifically limited, For example, it is good also as 0.05 to 5 weight% with respect to the total solid of the resin composition for solder resists, and also as 0.2 to 3 weight% Also good.

  Examples of the curing agent include phenol resins such as phenol novolak resin, cresol novolak resin, arylalkylene type novolak resin, and the like. Although content of the said hardening | curing agent is not specifically limited, For example, it is good also as 0.05 to 10 weight% with respect to the total solid of the resin composition for solder resists, and also as 0.2 to 5 weight% Good. Examples of the photosensitive agent include photosensitive diazoquinone compounds.

In the present embodiment, the thermosetting resin is a varnish-like resin composition. The resin sheet of this embodiment is obtained by making a varnish-like thermosetting resin into a film form.
The resin sheet of this embodiment can be obtained, for example, by subjecting a coating film (resin film) obtained by coating a varnish-like resin composition for a solder resist to a solvent removal treatment. The said resin sheet can define a solvent content rate as 5 weight% or less with respect to the whole resin composition for soldering resists. In the present embodiment, for example, the solvent removal treatment can be performed under conditions of 100 ° C. to 150 ° C. and 1 minute to 5 minutes. This makes it possible to sufficiently remove the solvent while suppressing the curing of the thermosetting resin film.

  In this embodiment, the method for forming the thermosetting resin on the carrier substrate is not particularly limited. For example, the resin varnish is prepared by dissolving and dispersing the thermosetting resin in a solvent or the like, and various coater apparatuses are used. Examples thereof include a method in which a resin varnish is applied to a carrier substrate and then dried, and a method in which the resin varnish is spray-coated on a carrier substrate using a spray device and then dried. Among these, the method of drying the resin varnish after applying the resin varnish to the carrier substrate using various coaters such as a comma coater and a die coater is preferable. Thereby, the resin sheet with a carrier base material which has no void and has a uniform resin sheet thickness can be efficiently produced.

(solvent)
In this embodiment, the resin composition for a varnish-like solder resist can contain, for example, a solvent.
Examples of the solvent include acetone, methyl ethyl ketone, methyl isobutyl ketone, toluene, ethyl acetate, cyclohexane, heptane, cyclohexane, cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylacetamide, dimethyl sulfoxide, ethylene glycol, cellosolve, carbitol, anisole, And one or more selected from organic solvents such as N-methylpyrrolidone.

  In the case where the solder resist resin composition is varnished, the solid content of the solder resist resin composition is preferably, for example, from 30% by weight to 80% by weight, and preferably from 40% by weight to 70% by weight. It is more preferable that Thereby, the resin composition for solder resists excellent in workability | operativity and film forming property is obtained. In addition, the resin composition for a varnish-like solder resist includes, for example, the above-described components, an ultrasonic dispersion method, a high-pressure collision dispersion method, a high-speed rotation dispersion method, a bead mill method, a high-speed shear dispersion method, and a rotation and revolution dispersion method. It can prepare by melt | dissolving, mixing, and stirring in a solvent using various mixers.

  In addition, the resin composition for solder resists according to the present embodiment may not include a fiber substrate such as a glass fiber substrate or a paper substrate. Thereby, it is possible to realize a solder resist resin composition particularly suitable for forming a solder resist film.

[Resin sheet]
The resin sheet which concerns on this embodiment can contain the film obtained from the said resin composition for soldering resists. In this embodiment, the resin sheet may have a sheet shape or a roll shape that can be wound. A solder resist film can be obtained by curing the resin sheet. Moreover, you may obtain a soldering resist film by hardening the coating film of the said resin composition for soldering resists.

  The L * value of the cured product of the solder resist resin composition (thermosetting resin composition) of the present embodiment can be 30 or less, 25 or less, or 20 or less. The L * value can be set to a desired numerical value by black titanium oxide, its content, ultrasonic dispersion treatment method, black dye, and the like. Thereby, the marking property of a laser such as a YAG laser can be improved. Moreover, the aesthetics of the whole semiconductor device can be enhanced by making the black color of the sealing resin layer of the semiconductor device and the solder resist film the same or similar. Although the lower limit of L * value is not specifically limited, For example, it can be set to 0 or more.

In the present embodiment, the measuring method of the L * value is not particularly limited, for example, Konica Minolta Sensing, Inc. Color Reader CR-13 (measurement mode: transmission, number of measurements: n = 3) _{using, L} ^{1 *} value , A ₁ ^* value, b ₁ ^* value can be measured.

The lower limit value of the volume resistivity of the cured product of the resin composition for solder resist is not particularly limited, but is preferably 1.0 × 10 ¹⁴ Ω · cm or more, for example, 5.0 × 10 ¹⁴ Ω · cm or more. More preferably, 1.0 × 10 ¹⁵ Ω · cm or more is more preferable. The upper limit value of the volume resistivity is not particularly limited, but is preferably 1.0 × 10 ¹⁸ Ω · cm or less, more preferably 5.0 × 10 ¹⁷ Ω · cm or less, and 1.0 × 10 ¹⁷ Ω, for example. -More preferable is cm or less. By setting the volume resistivity of the solder resist film within the above range, it is possible to realize a highly reliable wiring board and electronic device structure. The volume resistivity can be increased, for example, by increasing the content of black titanium oxide and its dispersibility.

  In this embodiment, the storage elastic modulus at 30 ° C. of the cured product of the resin composition for solder resist obtained by heat treatment at 200 ° C. for 1 hour is, for example, 7 GPa or more. As a result, it is possible to suppress the deflection and strength of the wiring board provided with the resin sheet obtained using the solder resist resin composition, and to suppress the warp of the semiconductor package including the wiring board. The storage elastic modulus is more preferably 10 GPa or more. On the other hand, the upper limit value of the storage elastic modulus is not particularly limited, but can be set to, for example, 50 GPa. Thereby, the wiring board which can manufacture the package excellent in durability is more reliably realizable.

  In this embodiment, the glass transition temperature of the hardened | cured material of the said resin composition for soldering resists obtained by heat-processing the resin composition for soldering resists at 200 degreeC and 1 hour is 160 degreeC or more, for example. This makes it possible to improve the heat resistance and reflow resistance of the resin sheet obtained using the solder resist resin composition. The glass transition temperature is more preferably 200 ° C. or higher. On the other hand, the upper limit value of the glass transition temperature is not particularly limited, but can be set to 350 ° C., for example.

  Moreover, since the said resin composition for solder resists uses the black titanium oxide which has heat resistance as a black pigment, it can utilize for the process hardened | cured by comparatively high temperature heat processing. Although it does not specifically limit as a lower limit of the curing temperature of this embodiment, For example, 160 degreeC or more is preferable, 180 degreeC or more is more preferable, and 200 degreeC or more is further more preferable. Although it does not specifically limit as an upper limit of the said curing temperature, For example, it can be set to 260 degrees C or less, 240 degrees C or less, and 220 degrees C or less may be sufficient. By using the resin composition for a solder resist of the present embodiment, a solder resist film that is excellent in heat resistance and stably exhibits a black color even under a high curing temperature condition can be obtained.

  In the present embodiment, the storage elastic modulus and the glass transition temperature are obtained, for example, by performing a dynamic viscoelasticity test using a dynamic viscoelasticity measuring device under conditions of a frequency of 1 Hz and a heating rate of 5 ° C./min. It can be calculated from the measurement result. Although it does not specifically limit as a dynamic viscoelasticity measuring apparatus, For example, the Seiko Instruments make and DMS6100 can be used.

In this embodiment, the linear expansion coefficient in the hardened | cured material of the said resin composition for soldering resists obtained by heat-processing at 200 degreeC for 1 hour is less than a glass transition temperature, for example, is 30 ppm / degrees C or less. This makes it possible to suppress warpage of a semiconductor package including a resin sheet obtained using the solder resist resin composition. The linear expansion coefficient is particularly preferably 28 ppm / ° C. or less. On the other hand, the lower limit value of the linear expansion coefficient is not particularly limited, but may be 3 ppm / ° C., for example. Thereby, the wiring board which can manufacture the package excellent in durability is more reliably realizable.
In the present embodiment, for example, an average at 25 to 50 ° C. of the linear expansion coefficient obtained by measuring at a temperature rising rate of 10 ° C./min using TMA (thermal analyzer) is calculated, and this is calculated. The linear expansion coefficient at a temperature lower than the glass transition temperature can be obtained.

  In this embodiment, for example, by appropriately selecting the type and amount of each component contained in the solder resist resin composition, the method for preparing the solder resist resin composition, etc., the storage elastic modulus, It is possible to control the glass transition temperature and the linear expansion coefficient.

  Moreover, the resin sheet with a carrier base material can be comprised by arrange | positioning the resin sheet (resin film | membrane) of this embodiment on a carrier base material. Thereby, the handleability of the resin sheet can be improved.

In the present embodiment, for example, a polymer film or a metal foil can be used as the carrier substrate. The polymer film is not particularly limited. For example, polyolefin such as polyethylene and polypropylene, polyester such as polyethylene terephthalate and polybutylene terephthalate, release paper such as polycarbonate and silicone sheet, heat resistance such as fluorine resin and polyimide resin. A thermoplastic resin sheet having The metal foil is not particularly limited. For example, copper and / or a copper-based alloy, aluminum and / or an aluminum-based alloy, iron and / or an iron-based alloy, silver and / or a silver-based alloy, gold and a gold-based alloy, for example. Zinc and zinc-based alloys, nickel and nickel-based alloys, tin and tin-based alloys, and the like. Among these, a sheet made of polyethylene terephthalate is most preferable because it is inexpensive and easy to adjust the peel strength. Thereby, it becomes easy to peel from the said resin sheet with moderate intensity | strength.
Although the thickness of the said carrier base material is not specifically limited, For example, it is good also as 10-100 micrometers, and good also as 10-70 micrometers. Thereby, the handleability at the time of manufacturing a resin sheet is favorable and preferable.

  The resin sheet of this embodiment may be a single layer or a multilayer, and may contain one or more of the above films. When the said resin sheet is a multilayer, it may be comprised by the same kind and may be comprised by different types.

  In the present embodiment, the method for forming the resin sheet having two or more layers is not particularly limited. For example, the first resin layer and the second resin obtained by applying a solder resist resin composition to a carrier substrate. A two-layer resin sheet is obtained by bonding the layers together and then drying them. In addition, the 1st resin sheet is obtained by apply | coating the resin composition for solder resists to a carrier base material, and making it dry. After this, a method of forming the second resin sheet on the first resin sheet by applying and drying the solder resist resin composition on the first resin sheet can be mentioned. Moreover, the method of obtaining the resin sheet of 2 layers can also be used by apply | coating and drying two layers on a carrier base material simultaneously.

[Wiring board]
The wiring board according to the present embodiment will be described.
FIG. 1 is a schematic diagram illustrating an example of the structure of the wiring board 20 in the embodiment.
The wiring board of this embodiment includes a substrate (core substrate 22), a conductive circuit (conductor pattern 24) formed on the substrate, and a solder resist film (insulating resin film 10) formed on the outermost layer of the substrate. And can be included. The solder resist film is obtained by curing the solder resist resin composition of the present embodiment. For example, the solder resist film can be composed of a cured product of the resin sheet of the present embodiment.

  A wiring substrate 20 shown in FIG. 1 includes a core substrate 22, a conductor pattern 24, and an insulating resin film 10. The conductor pattern 24 is provided on at least one outermost surface of the core substrate 22. The insulating resin film 10 constitutes the outermost layer of the wiring board 20. The insulating resin film 10 is provided around the conductor pattern 24. The insulating resin film 10 is provided with a plurality of openings 28. A part of the conductive portion of the conductor pattern 24 is located in the at least one opening 28.

In the wiring substrate 20 according to the present embodiment, the core substrate 22 is a substrate including at least one insulating layer. The insulating layer provided in the core substrate 22 is, for example, a resin base material obtained by impregnating a fiber base material with a resin composition.
The core substrate 22 can be made of a thermosetting resin. The core substrate 22 may be a rigid substrate or a flexible substrate. The thickness of the core substrate 22 is not particularly limited, but can be, for example, 10 μm or more and 300 μm or less.

The core substrate 22 may be a single-sided plate having only one insulating layer and having a conductor pattern 24 formed only on one side thereof, or having only one layer and conductive on both the front and back sides. A double-sided board provided with a body pattern 24 may be used, or a multilayer board having two or more insulating layers may be used. When the core substrate 22 is a multilayer board, one or more wiring layers sandwiched between two insulating layers are formed in the core substrate 22.
When the core substrate 22 is a double-sided board or a multilayer board, the conductor pattern 24 provided on one surface (outermost surface) of the core substrate 22 is a conductor provided on the opposite surface (outermost surface). The wiring layer provided inside the pattern 24 and the core substrate 22 is electrically connected to each other through a through hole (not shown) penetrating at least a part of the insulating layer.

  The conductor pattern 24 is provided on at least one surface (outermost surface) of the front surface and the back surface of the core substrate 22. The conductor pattern 24 is, for example, a pattern formed by selectively etching a copper film laminated on the core substrate 22. The conductor pattern 24 includes at least a land 244 and a line 242 as a conductive portion. The land 244 is mainly a connection portion that electrically connects an element or component mounted on the wiring board 20 and the conductor pattern 24, for example, another portion of the conductor pattern 24 or a wiring layer in the core substrate 22. A circular or square part connected to the. Note that a hole for inserting a terminal of an electronic component or the like may be provided at the center of the land 244. The line 242 is mainly a linear portion that electrically connects the lands 244 to each other.

  The insulating resin film 10 is laminated on the conductor pattern 24. The insulating resin film 10 is composed of the solder resist film of this embodiment. Thereby, since insulation can be maintained, a highly reliable wiring board can be obtained. Moreover, since the said soldering resist film | membrane is arrange | positioned at the upper and lower outermost layers, it can exhibit, for example in black, and can improve the aesthetics also in the lower surface of a wiring board. Further, a mark can be printed on the lower surface of the solder resist film by a laser such as a YAG laser.

  The insulating resin film 10 is provided with an opening mainly in a region where the land 244 is provided, and the land 244 is not covered with the insulating resin film 10. That is, the insulating resin film 10 is not provided on the land 244 and the land 244 is exposed. Note that a conductive film such as a nickel and gold plating film or a solder plating film may be laminated on the land 244. In the wiring board 20 according to the present embodiment, a plating film 246 is further provided on the land 244 located in the opening. The insulating resin film 10 may be further provided with an opening in a portion other than the land 244 or an opening that exposes a part of the line 242. Further, it is not necessary for all of the lands 244 to be located in the openings, and there may be lands 244 covered with the insulating resin film 10.

  The wiring board 20 can be used as an interposer or a mother board, for example. The package refers to a package in which various parts are mounted on a wiring board and sealed together. The semiconductor package is an example of a package, and the package includes an ECU (Electric Control Unit) that is collectively sealed.

[Electronic device]
Next, the semiconductor package 102 according to the present embodiment will be described.
FIG. 2 is a schematic cross-sectional view showing an example of the structure of the semiconductor package 102 according to this embodiment.
The electronic device (semiconductor package 102) of the present embodiment can include the wiring board (wiring board 20) and an electronic element (semiconductor element 60) mounted on the wiring board. That is, the electronic device can be used as a semiconductor device. Of the solder resist film constituting the outermost layer of this wiring board, the solder resist film (the insulating resin film 10 on the lower layer side) disposed on the surface opposite to the surface on which the electronic element is mounted is implemented in this embodiment. It can be obtained by curing the solder resist resin composition in the form.

  A semiconductor package 102 shown in FIG. 2 includes a wiring substrate 20, a semiconductor element 60, and a sealing resin layer 40. The semiconductor element 60 is disposed on the wiring board 20. The sealing resin layer 40 covers at least one surface of the wiring substrate 20 and the semiconductor element 60. The wiring substrate 20 includes a core substrate 22, a conductor pattern 24, and the insulating resin film 10. The conductor pattern 24 is provided on at least one outermost surface of the core substrate 22. The insulating resin film 10 is the outermost layer of the wiring board 20 and is provided around the conductor pattern 24.

  In the semiconductor package 102 according to the present embodiment, at least one semiconductor element 60 is disposed on the insulating resin film 10 on one surface (hereinafter referred to as “upper surface”) of the wiring substrate 20 described above. . In the semiconductor package 102, the wiring substrate 20 is, for example, an interposer, and the semiconductor element 60 is, for example, an LSI chip cut out from a semiconductor wafer. In addition to the semiconductor element 60, for example, an electronic component functioning as a resistor or a capacitor may be further disposed on the upper surface of the wiring board 20. The semiconductor element 60 is fixed on the insulating resin film 10 via a die attach material 62.

  The semiconductor element 60 is provided with an electrical connection pad (not shown) on the surface thereof, and the connection pad is connected to a circuit built in the semiconductor element 60, for example. A land 244 that is a part of the conductor pattern 24 provided on the wiring board 20 is provided in the opening 28 of the insulating resin film 10. The land 244 and the connection pad of the semiconductor element 60 are connected by a bonding wire 50. In the semiconductor package 102 according to the present embodiment, the plating film 246 is further provided on the land 244, and the land 244 is connected to the bonding wire 50 through the plating film 246. However, the present invention is not limited to this. . Further, instead of being connected by the bonding wire 50, it may be connected by a lead wire or solder.

  The sealing resin layer 40 includes the insulating resin film 10 exposed on the surface of the upper surface of the wiring substrate 20, the core substrate 22, the plating film 246 (land 244 if no plating film 246 is provided), and the semiconductor element 60. Of these, the surface other than the surface bonded to the wiring substrate 20 by the die attach material 62 and the bonding wire 50 are covered. The sealing resin layer 40 may cover the entire surface of the wiring substrate 20 on which the semiconductor element 60 is provided, or may cover a part of the surface exposed.

The wiring substrate 20 of the semiconductor package 102 is further provided with a plurality of openings 28 and lands 244 inside the openings 28 on the surface opposite to the upper surface (hereinafter referred to as “lower surface”). Each land 244 is covered with a plating film 246, and further solder balls 30 are provided to cover the plating film 246.
Here, an example of a flip chip connection package has been described as the semiconductor package 102 according to the present embodiment, but the present invention is not limited to this, and a package that is connected by wire bonding or TAB (Tape Automated Bonding) may be used.

  In the present embodiment, the sealing resin layer 40 of the semiconductor device and the lower insulating resin film 10 (the solder resist film of the present embodiment) disposed on the side opposite to the mounting surface can be the same color. It is. For example, each can be the same or similar black. By making the outermost layers of the upper surface and the lower surface the same black, the aesthetics of the entire semiconductor device can be improved. Note that a black seal covering the external connection electrode (for example, the solder ball 30) may be pasted on the lower surface of the insulating resin film 10 under the semiconductor device.

Further, a mark is printed on the upper surface of the sealing material 30 or the lower surface of the insulating resin film 10 by a laser such as a YAG laser, for example. This mark is made up of, for example, at least one of letters, numbers, or symbols consisting of straight lines or curves. The mark indicates, for example, the product name, product number, lot number, or manufacturer name of the semiconductor package. The mark may be stamped by, for example, a YVO ₄ laser, a carbonic acid laser, or the like.

  The semiconductor device according to the present embodiment is not particularly limited. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), and QFN (Quad Flat N). Leaded Package), SON (Small Outline Non-Leaded Package), LF-BGA (Lead Frame BGA), and the like.

  Examples of the semiconductor element include, but are not limited to, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and a solid-state imaging element.

[Method of manufacturing a wiring board]
Next, a method for manufacturing the wiring board 20 will be described.
The manufacturing method of the wiring board 20 according to the present embodiment includes a step of preparing the core substrate 22, a step of laminating an insulating film, a step of forming the opening 28, and a step of desmearing in this order. In the step of preparing the core substrate 22, the core substrate 22 having the conductor pattern 24 provided on at least one outermost surface is prepared. In the step of laminating the insulating film, the outermost insulating film is laminated on the core substrate 22 and the conductor pattern 24. In the step of forming the opening 28, a part of the conductor pattern 24 is exposed in a predetermined region of the insulating film. In the desmear process, the surface of the insulating film is desmeared. The step of forming the opening portion 28 includes a step of irradiating a region to be the opening portion 28 of the insulating film with laser light.

  First, the core substrate 22 provided with the conductor pattern 24 on at least one outermost surface of the front and back is prepared (step of preparing the core substrate). Next, an insulating film is laminated on the conductor pattern 24 of the core substrate 22 (stacking step). In this step, a resin film with a carrier is pasted on the surface of the core substrate 22 on which the conductor pattern 24 is provided so that the insulating film faces the core substrate 22. The application of the resin film with a carrier can be performed, for example, by laminating the resin film with a carrier on the conductor pattern 24 and then vacuum-pressing and forming it. In the present embodiment, the resin film with a carrier may be a resin film with a metal foil or a resin film with a resin film. Next, the carrier substrate is peeled from the insulating film. As a result, an insulating film is formed on the core substrate 22 so as to cover the conductor pattern 24. In the present embodiment, the method of laminating the insulating film using the resin film with a carrier has been described. However, the varnish-like resin composition for solder resist is applied on the conductor pattern 24 and dried to laminate the insulating film. May be.

  Next, an opening 28 is provided at a predetermined position of the insulating film on the conductor pattern 24 (step of forming an opening). The opening 28 is formed so as to mainly expose the land 244 of the conductor pattern 24. A method for forming the opening 28 is not particularly limited, and a method such as an exposure development method or a laser processing method can be used.

  When the exposure development method is used for forming the opening 28, the solder resist resin composition needs to contain a photosensitive agent. In the exposure and development method, first, exposure is carried out by selectively irradiating light to either the region where the opening 28 is formed or the region where the opening 28 is not formed in the insulating film. Thereafter, the opening 28 can be formed by performing development using a developer such as an alkaline aqueous solution.

  Thereafter, the insulating resin film 10 is formed by thermosetting the insulating film. In the present embodiment, the curing temperature is not particularly limited, but may be, for example, 160 ° C. or higher, 180 ° C. or higher, or 200 ° C. or higher. Thereby, the insulating resin film 10 (solder resist film) is formed. Here, for the exposure, for example, a method of irradiating ultraviolet rays with a mask pattern adhered, or a method of directly irradiating a desired region with laser light can be used.

  From the viewpoint of simplification of the process, in the step of forming the opening 28, there is a method of forming an opening by irradiating a region to be the opening 28 in the insulating film with laser light (step of irradiating laser light). Of these, the laser processing method is more preferable.

  After the opening 28 is formed, a desmear process can be performed as necessary (desmear process). In the desmear process, smear generated due to the formation of the opening 28 is removed.

  In the method for manufacturing the wiring board 20 according to the present embodiment, after forming the opening 28 and performing desmear treatment as necessary, the plating film 246 is formed on the conductor pattern 24 exposed in the opening 28. Plating is performed. However, the wiring substrate 20 may be formed without forming the plating film 246. The plating film 246 can be, for example, a plating film having a two-layer structure in which a gold plating film is laminated on a solder plating film, a tin plating film, or a nickel plating film. The plating film 246 is formed so as to cover the conductive portion of the conductor pattern 24 exposed in the opening 28. Moreover, the film thickness of the plating film 246 is not particularly limited, but may be, for example, 2 μm or more and 10 μm or less. Thereby, the land 244 portion can be a connection portion suitable for wire bonding or soldering in a mounting process using the wiring board 20.

The method for the plating treatment is not particularly limited, and a known method can be used. For example, an electrolytic plating method or an electroless plating method can be used. For example, when the electroless plating method is used, the plating film 246 can be formed as follows. Here, an example of forming the plating film 246 having a two-layer structure of nickel and gold will be described, but the present invention is not limited to this. First, a nickel plating film is formed. When performing electroless nickel plating, the core substrate 22 in which the conductor pattern 24 and the insulating resin film 10 are laminated is immersed in a plating solution. Thus, a nickel plating film can be formed on the conductive portion of the conductor pattern 24 exposed at the opening 28. As the plating solution, nickel lead and a reducing agent containing, for example, hypophosphite can be used. Subsequently, electroless gold plating is performed on the nickel plating film. Although the method of electroless gold plating is not particularly limited, for example, it can be performed by substitution gold plating performed by substitution of gold ions and ions of a base metal.
In addition, you may perform the process of wash | cleaning the conductive part of the exposed conductor pattern 24, and the process of roughening before a plating process as needed.

  Next, in the method for manufacturing the wiring substrate 20 according to the present embodiment, the surface on which the insulating resin film 10 is formed may be subjected to plasma treatment. As described above, the wiring board 20 according to the present embodiment as shown in FIG. 1 is obtained.

[Method for Manufacturing Electronic Device]

Next, a method for manufacturing the semiconductor package 102 will be described.
The manufacturing method of the electronic device (semiconductor package 102) of this embodiment includes a step of preparing a substrate (core substrate 22) on which a conductive circuit (conductive pattern 24) is formed on one surface, and a resin film (the insulating film) as a substrate. A step of disposing the resin film, forming an opening in the resin film to expose the conductive circuit, a step of forming a solder resist film (insulating resin film 10) by heating the resin film, and an electron A step of electrically connecting the element to the conductive circuit exposed in the opening and a step of sealing the electronic element (semiconductor element 60) can be included. The resin film is preferably formed using the solder resist resin composition of the present embodiment. That is, the resin film may be composed of a coating film of the solder resist resin composition or the resin sheet. In the present embodiment, the resin film is formed on both surfaces of the substrate (core substrate 22), and at least the resin film disposed on the surface opposite to the surface on which the electronic element is mounted is It is preferable to use the solder resist resin composition of the present embodiment.

  That is, the manufacturing method of the semiconductor package 102 according to the present embodiment includes a step of preparing the wiring board 20, a step of disposing the semiconductor element 60, and a step of sealing in this order. In the step of preparing the wiring board 20, the wiring board 20 with the insulating resin film 10 (solder resist film) exposed on the surface is prepared. In the step of disposing the semiconductor element 60, the semiconductor element 60 is disposed on the insulating resin film 10. In the sealing step, the exposed insulating resin film 10 and semiconductor element 60 are sealed so as to be covered with a sealing resin. The wiring substrate 20 includes a core substrate 22, a conductor pattern 24, and the insulating resin film 10. The conductor pattern 24 is provided on at least one outermost surface of the core substrate 22. The insulating resin film 10 is the outermost layer of the wiring substrate 20 and is provided on the conductor pattern 24. The insulating resin film 10 is provided with a plurality of openings 28. A part of the conductive portion of the conductor pattern 24 is located in the at least one opening 28.

  First, the above-described wiring substrate 20 is prepared (step of preparing a wiring substrate), and the semiconductor element 60 is disposed on the wiring substrate 20 (step of disposing a semiconductor element). At this time, the semiconductor element 60 is mounted on the wiring board 20 via a die attach material 62, for example. The bonding wire 50 that connects the semiconductor element 60 and the wiring board 20 is bonded to the conductor pattern 24 exposed in the opening 28 on the upper surface of the wiring board 20, for example. Next, the upper surface of the wiring substrate 20, the semiconductor element 60, and the bonding wire 50 are sealed with the sealing resin layer 40 (sealing step). For example, an epoxy resin composition can be used as the sealing resin. As a method of molding with a sealing resin, a transfer molding method, an injection molding method, a transfer method, a coating method, or the like can be used. The sealing resin layer 40 is cured by heating at 150 ° C. or higher and 200 ° C. or lower, for example.

  Further, in the example in which the solder balls 30 that are external connection terminals are provided on the wiring board 20, the solder balls 30 are formed on the conductor pattern 24 exposed in the opening 28 on the lower surface side, for example. In addition, although the example of the package of the flip chip connection was demonstrated as the semiconductor package 102 which concerns on this embodiment, the semiconductor package 102 is not limited to this, The package connected by wire bonding or TAB may be sufficient.

  As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

  Next, examples of the present invention will be described.

(Preparation of thermosetting resin composition)
A varnish-like thermosetting resin composition was prepared for each example and each comparative example. First, after the raw materials (except for black titanium oxide) of each component blended according to Table 1 were dissolved and dispersed in the solvent 1, varnish was obtained by stirring for 1 hour using a high-speed stirring device. Then, black titanium oxide was mix | blended in the obtained varnish, and the varnish-like thermosetting resin composition was obtained by stirring for 1 hour by an ultrasonic dispersion system. In addition, the numerical value which shows the mixture ratio of each component in Table 1 has shown the mixture ratio (weight%) of each component with respect to the whole solid content of a thermosetting resin composition.
The detail of the raw material of each component in Table 1 is as follows.

（着色剤）
黒色染料１：アントラキノン系化合物を含む染料（日本化薬社製、Ｋａｙａｓｅｔ Ｂｌａｃｋ Ａ−Ｎ）
黒色顔料１：黒色酸化チタン（赤穂化学社製、ＴＭ−ＨＰＥ、平均粒径０．２〜０．４μｍ）
黒色顔料２：カーボンブラック（三菱化学株式会社製、ＭＡ６００）
（カップリング剤）
カップリング剤１：エポキシシラン型カップリング剤（モメンティブ・パフォーマンス・マテリアルズ社製、Ａ−１８７）
（レベリング剤）
レベリング剤１：レベリング剤（ビックケミー・ジャパン（株）製、ＢＹＫ−３６１Ｎ）
（溶剤）
溶剤１：メチルエチルケトン (Thermosetting resin)
Thermosetting resin 1: Naphthalene-modified cresol novolac type epoxy resin (manufactured by DIC Corporation, EXA-7320)
Thermosetting resin 2: Biphenyl aralkyl type epoxy resin (Nippon Kayaku Co., Ltd., NC-3000)
Thermosetting resin 3: Biphenyl type epoxy resin (Japan Epoxy Resin, YX4000HK)
Thermosetting resin 4: bisphenol A type epoxy resin (Mitsubishi Chemical, jER828EL)
Thermosetting resin 5: Naphthalene diol type epoxy resin (manufactured by DIC, EPICLON HP-4032D)
(Filler)
Filler 1: Silica (manufactured by Admatechs, SC4050KNR, average particle size 1 μm, 5 μm cut)
(Cyanate resin)
Cyanate resin 1: Phenol novolac type cyanate resin (manufactured by LONZA, Primaset PT-30)
(Curing agent)
Curing agent 1: phenol novolak resin (manufactured by Sumitomo Bakelite, PR-53195)
(Curing accelerator)
Curing accelerator 1: Phosphorus catalyst of an onium salt compound corresponding to the following general formula (2) (manufactured by Sumitomo Bakelite Co., Ltd., C05-MB)

(Coloring agent)
Black dye 1: Dye containing anthraquinone compound (manufactured by Nippon Kayaku Co., Ltd., Kayase Black A-N)
Black pigment 1: Black titanium oxide (manufactured by Ako Chemical Co., Ltd., TM-HPE, average particle size 0.2 to 0.4 μm)
Black pigment 2: Carbon black (Mitsubishi Chemical Corporation, MA600)
(Coupling agent)
Coupling agent 1: Epoxysilane type coupling agent (A-187, manufactured by Momentive Performance Materials)
(Leveling agent)
Leveling agent 1: Leveling agent (BYK-361N, manufactured by Big Chemie Japan Co., Ltd.)
(solvent)
Solvent 1: Methyl ethyl ketone

(Production of resin film with carrier)
About each Example and each comparative example, after apply | coating the obtained thermosetting resin composition on PET film which is a carrier base material, the solvent was removed on 140 degreeC and the conditions for 2 minutes, and 30 micrometers in thickness was obtained. A thermosetting resin film was formed. Thereby, a resin film with a carrier was obtained.

(L * value)
The PET film, which is a carrier base material, was peeled from the obtained resin film with a carrier to prepare a resin sheet with a thickness of 30 μm. The resin sheet was used as a sample.
L ₁ ^* value, a ₁ ^* value, and b ₁ ^* value were measured using Color Reader CR-13 (measurement mode: transmission, number of measurements: n = 3) manufactured by Konica Minolta Sensing. The CIE 1976 L ^* a ^* b ^* color system values were converted into numerical values by the main body of the apparatus, and CIE 1976 L ^* a ^* b ^* color system data were obtained.

(Measurement of volume resistivity)
The PET film, which is a carrier base material, was peeled from the obtained resin film with a carrier to prepare a resin sheet with a thickness of 30 μm. The resin sheet was used as a sample.
The volume resistivity was measured according to JIS K 6911. The test piece was cut out from the samples obtained from the examples and comparative examples so as to be 10 cm × 10 cm.

(Dispersibility)
A varnish-like thermosetting resin composition is dispersed and prepared to obtain a sample. (I) A sample immediately after dispersion, or (ii) a sample after 48 hours from preparation was put in a grind gauge, and the gauge was pulled. This determined the dispersion state. The results of the following evaluation criteria are shown in Table 1.
Evaluation criteria:
There is no filler trapping at deeper than 10 μm: ○ (pass)
There is a catch: × (failed)

(Glass transition temperature, storage modulus)
Three of the obtained resin films with a carrier from which the PET film as a carrier substrate was peeled were laminated to prepare a resin sheet having a thickness of 90 μm. Next, the resin sheet was heat-treated at 200 ° C. for 1 hour, and then cut into a width of 8 mm × a length of 50 mm × a thickness of 90 μm to obtain a measurement sample. A dynamic viscoelasticity test was performed on the measurement sample using a dynamic viscoelasticity measurement apparatus (Seiko Instruments, DMS6100) under conditions of a frequency of 1 Hz and a temperature increase rate of 5 ° C./min. Subsequently, the glass transition temperature (° C.) and the storage elastic modulus (GPa) at 30 ° C. were calculated from the obtained measurement results. The glass transition temperature was determined from the peak value of tan δ. The results are shown in Table 1.

(Linear expansion coefficient)
Three of the obtained resin films with a carrier from which the PET film as a carrier substrate was peeled were laminated to prepare a resin sheet having a thickness of 90 μm. Next, the resin sheet was heat treated at 200 ° C. for 1 hour, and then cut into a width of 4 mm × a length of 20 mm × a thickness of 90 μm to obtain a measurement sample. The linear expansion coefficient was measured on the measurement sample using TMA (manufactured by TA Instruments Co., Ltd.) under the condition of a temperature increase rate of 10 ° C./min. Subsequently, the average of the measurement result in 50-75 degreeC was computed, and this was made into the linear expansion coefficient (ppm / degreeC) in less than a glass transition temperature. The results are shown in Table 1.

  As described above, the present invention has been described more specifically based on the embodiments. However, these are exemplifications of the present invention, and various configurations other than the above can be adopted.

DESCRIPTION OF SYMBOLS 10 Insulating resin film 20 Wiring board 22 Core board 24 Conductor pattern 28 Opening 30 Covering solder ball 30 Solder ball 40 Sealing resin layer 50 Bonding wire 60 Semiconductor element 62 Die attach material 242 Line 244 Land 246 Plating film

Claims (20)

A thermosetting resin;
Inorganic fillers;
A solder resist resin composition comprising a black pigment,
A resin composition for a solder resist used for a black solder resist, wherein the black pigment contains black titanium oxide. The resin composition for a solder resist according to claim 1, wherein the black titanium oxide is represented by TiO _x (where X represents 1 or more and less than 2). The resin composition for solder resists according to claim 1 or 2, wherein D _{50 of the} black titanium oxide is 0.1 µm or more and 2.0 µm or less.   4. The resin for solder resist according to claim 1, wherein the content of the black titanium oxide is 1% by weight or more and 10% by weight or less with respect to the entire resin composition for solder resist. Composition.   The resin composition for solder resists according to any one of claims 1 to 4, wherein the thermosetting resin contains an epoxy resin.   The resin composition for a solder resist according to claim 5, wherein the epoxy resin includes an epoxy resin having a naphthalene skeleton.   The resin composition for solder resists according to claim 1, wherein the thermosetting resin contains a cyanate resin.   The resin composition for solder resists according to claim 1, further comprising a black dye.   The resin composition for a solder resist according to any one of claims 1 to 8, wherein the inorganic filler includes silica.   The resin composition for solder resists according to any one of claims 1 to 9, which is used in a step of curing by heat treatment at 160 ° C or higher. The volume resistivity of the cured product of the resin composition for solder resist is 1.0 × 10 ¹⁴ Ω · cm or more and 1.0 × 10 ¹⁸ Ω · cm or less. The resin composition for solder resists described in 1.   The resin composition for solder resists according to any one of claims 1 to 11, wherein the cured product of the resin composition for solder resists has a storage elastic modulus at 30 ° C of 7 Gpa or more.   The resin composition for solder resists according to any one of claims 1 to 12, wherein a glass transition temperature of a cured product of the resin composition for solder resists is 160 ° C or higher.   The resin composition for solder resists according to any one of claims 1 to 13, wherein a linear expansion coefficient at a temperature lower than the glass transition temperature of the cured product of the resin composition for solder resists is 30 ppm / ° C or less.   The resin composition for solder resists according to any one of claims 1 to 14, wherein the L * value of the cured product of the resin composition for solder resists is 30 or less. A carrier substrate;
A resin film disposed on the carrier substrate,
A resin film with a carrier, wherein the resin film uses the solder resist resin composition according to any one of claims 1 to 15. A substrate,
A conductive circuit formed on the substrate;
A solder resist film formed on the outermost layer of the substrate,
The said soldering resist film | membrane is a wiring board formed using the resin composition for soldering resists of any one of Claim 1 to 15. A wiring board according to claim 17,
An electronic device mounted on the wiring board,
16. The solder resist film disposed on a surface opposite to a surface on which the electronic element is mounted, among solder resist films constituting the outermost layer of the wiring board. An electronic device using the solder resist resin composition described in 1. Preparing a substrate having a conductive circuit formed on one side;
Placing a resin film on the substrate;
Forming an opening in the resin film to expose the conductive circuit;
Forming a solder resist film by heat-treating the resin film;
Electrically connecting an electronic element with the conductive circuit exposed in the opening;
Sealing the electronic element,
The said resin film is a manufacturing method of the electronic device which uses the resin composition for soldering resists of any one of Claims 1-15. The resin film is formed on both sides of the substrate,
The said resin film arrange | positioned at least on the surface on the opposite side to the surface in which the said electronic element was mounted uses the resin composition for solder resists of any one of Claim 1 to 15. Item 20. A method for manufacturing an electronic device according to Item 19.

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