JP2017028218A - Semiconductor element manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inhibit breakage of a semiconductor element wafer caused by a work for reattaching the semiconductor element wafer to a support member suitable for each process in manufacturing of semiconductor elements.SOLUTION: In a semiconductor element manufacturing process of: forming a first work member in which a first support member 50, a first thermal release sheet 40, a second support member 30, a second thermal release sheet 20 and a semiconductor element wafer 10 are laminated in this order; subsequently, undergoing a grinding process and performing a first removal process of heating the first heat release sheet to a first predetermined temperature to make a second work member where the first support member is removed; and undergoing a surface treatment process and performing a second removal process of heating the second thermal release sheet to a second predetermined temperature to remove the second support member, by setting the first predetermined temperature lower than the second predetermined temperature, works for sequentially removing support members and works for reattaching the support members are omitted.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method for manufacturing a semiconductor element.

  One of the semiconductor elements is a semiconductor light emitting element. For example, Patent Document 1 proposes a configuration in which a reflective layer (functional film) is formed on the back side of a substrate for an element that extracts light mainly from the semiconductor layer side of the element, such as a face-up element (FU element). ing. In such a structure of the semiconductor element, in order to facilitate separation from the state of the semiconductor light emitting element wafer into individual semiconductor light emitting elements, the back surface side is ground before the reflective layer is formed. In general, the method includes a step of reducing the thickness of the substrate itself to a predetermined thickness. When performing such a grinding process, it is necessary to temporarily fix the wafer to a predetermined support base. For example, Patent Document 2 proposes that a double-sided pressure-sensitive adhesive sheet having a heat-peeling pressure-sensitive adhesive layer on at least one side is used as a temporary fixing member.

JP-A-11-126923 JP 2014-011242 A

  However, after the grinding process is performed on the back side of the substrate, a surface treatment based on wet etching or the like may be required on the back side in order to form a reflective layer on the back side. . The support table for grinding has a predetermined shape and size so as to withstand the grinding process, and is stored in the apparatus for performing the surface treatment with the wafer attached to the support table. It is generally difficult to do. Therefore, when carrying out the surface treatment, it is necessary to remove the wafer from the support table and temporarily fix it again to a support member suitable for the surface treatment step. As a temporary fixing member at that time, it is conceivable to use a double-sided pressure-sensitive adhesive sheet having a heat-release pressure-sensitive adhesive layer as in Patent Document 2, but the wafer is peeled off from the support and pasted on the support member. Until the wafer is replaced, the wafer is held by a relatively soft member such as the pressure-sensitive adhesive sheet, so that the wafer may be damaged during that time.

  In the present invention, a method for manufacturing a semiconductor device is proposed, which makes it possible to eliminate the above-mentioned concerns.

  The present invention is a method for manufacturing a semiconductor element, and includes a first support member, a first heat release sheet, a second support member, a second heat release sheet, and a semiconductor element wafer having a substrate. The work member formation process which forms the 1st work member which consists of 1st support member, the 1st heat exfoliation sheet, the 2nd support member, the 2nd heat exfoliation sheet, and the semiconductor element wafer in order And after the work member forming step, grinding the first surface of the substrate in the first work member to grind the substrate to a predetermined thickness, and after the grinding step, at least the first A first removal step in which the heat release sheet is heated to a first predetermined temperature to remove at least the first support member from the first work member to form a second work member, and a first removal step After that, the first surface of the substrate in the second work member is modified After the surface treatment step to be cleaned and the surface treatment step, the second heat release sheet is heated to the second predetermined temperature to remove at least the second support member from the second work member. And a removing step, wherein the first predetermined temperature is lower than the second predetermined temperature.

  In the semiconductor device manufacturing method described above, it is desirable that the temperature difference between the first predetermined temperature and the second predetermined temperature is 20 ° C. or higher and 110 ° C. or lower.

  In the semiconductor element manufacturing method described above, it is desirable that at least the surface facing the semiconductor element wafer of the second heat release sheet is a surface that peels at the second predetermined temperature.

  The above-described method for manufacturing a semiconductor device further includes a functional film forming step of forming a functional film on at least the first surface of the substrate after the surface treatment step and prior to the second removing step. Also good.

  The above-described method for manufacturing a semiconductor device may further include a modified portion forming step of forming a modified portion on at least the substrate after the surface treatment step and prior to the second removing step.

  The method for manufacturing a semiconductor device described above further includes a separation step of separating the semiconductor device wafer into individual semiconductor devices in a state where the second thermal separation sheet is left after the second removal step. May be.

  In the method for manufacturing a semiconductor element of the present invention, each support member is temporarily fixed with a heat-peeling sheet, and each support member is removed step by step in the course of the process, Work to replace each support member is abolished. Therefore, damage to the semiconductor element wafer due to the operation of attaching the semiconductor element wafer to each support member suitable for each process is suppressed.

  In the method for manufacturing a semiconductor device of the present invention, the temperature difference between the first predetermined temperature and the second predetermined temperature is 20 ° C. or more and 110 ° C. or less, so that each support member is The removal can be performed in a step-by-step manner, and the influence of heat on the semiconductor element can be suppressed.

  In the method for manufacturing a semiconductor device of the present invention, the second thermal release sheet is formed from the semiconductor device by making at least the surface facing the semiconductor device wafer a surface to be peeled at the second predetermined temperature. When removing the thermal release sheet, it can be easily removed.

  In addition, when a functional film is formed on a substrate of a semiconductor element, it is desirable to have a support member at that time. Therefore, a functional film forming process is performed following the surface treatment process, and then a second removal process is performed. If this is done, the process can be set without making the process more complicated than necessary.

  Also, when forming a modified portion for separation on the substrate of the semiconductor element wafer, it is desirable to have a support member at that time, so after undergoing the modified portion forming step following the surface treatment step, If the second removal process is performed, the process can be set without making the process more complicated than necessary.

  In addition, when a semiconductor element wafer separation step is used, a dicing tape is usually used to suppress dissipation of the semiconductor element after separation, so that the second heat release sheet is left as an alternative to the dicing tape. Also good.

FIG. 1 is a schematic view showing a first workpiece member 60 and a workpiece member forming step S100 in the manufacturing method of the present invention. Example 1 FIG. 2 is a schematic view showing the grinding step S110 of the manufacturing method of the present invention. Example 1 FIG. 3 is a schematic view showing the first removal step S120 of the manufacturing method of the present invention. Example 1 FIG. 4 is a schematic view showing the surface treatment step S130 of the production method of the present invention. Example 1 FIG. 5 is a schematic view showing the functional film forming step S140 of the manufacturing method of the present invention. Example 1 FIG. 6 is a schematic view showing the modified portion forming step S150 of the manufacturing method of the present invention. Example 1 FIG. 7 is a schematic view showing the second removal step S160 of the manufacturing method of the present invention. Example 1 FIG. 8 is a schematic view showing the separation step S170 of the production method of the present invention. Example 1 FIG. 9 is a diagram showing a process flow of the manufacturing method of the present invention. Example 1

  Embodiments of the present invention will be described below with reference to the drawings. In the embodiment, a flip chip type semiconductor light emitting element (FC element) is taken as an example, and the configuration and manufacturing method thereof will be described. In addition, all the drawings are schematically drawn for easy understanding of the manufacturing method and each process of the semiconductor light emitting device.

(First work member 60)
First, the 1st workpiece member 60 used in the manufacturing method of the semiconductor element of Example 1 is explained.

  As shown in FIG. 1, the first work member 60 includes a semiconductor light emitting element wafer 10, a second heat release sheet 20, a second support member 30, a first heat release sheet 40, and a first support described later. Member 50.

  The semiconductor light emitting element wafer 10 includes a substrate 11 and a semiconductor element layer 15. The substrate 11 is a substantially circular thin plate-shaped member made of gallium nitride (GaN), and is opposite to the first surface 12 that is a surface to be ground in a grinding process described later, and the first surface 12. And a second surface 13 that is a surface on which the semiconductor element layer 15 is formed. The semiconductor element layer 15 is made of a gallium nitride based semiconductor layer that is the same material as the substrate 11. The semiconductor light emitting element wafer 10 has a diameter of about 3 inches (about 75 mm) and a thickness of about 0.1 mm.

  The second heat release sheet 20 is a flexible thin plate-like member, and is a double-sided pressure-sensitive adhesive sheet comprising a base material 21, a heat-release adhesive 22 and an adhesive 24, and has a so-called double-sided adhesive tape structure. have. The thermal peeling adhesive 22 is formed in a layer on the surface of the substrate 21 on the semiconductor element layer 15 side in the semiconductor light emitting element wafer 10 described above, and forms a thermal peeling surface 23. The heat-peeling adhesive 22 is set so that the adhesive strength is weakened when heated to 150 ° C. The adhesive 24 is formed in a layered manner on the surface on the side opposite to the surface on which the heat-peeling pressure-sensitive adhesive 22 is formed on the base material 21 and on the second support member 30 side described later. The adhesive surface 25 is formed. The adhesive 24 may be any adhesive as long as the adhesive force does not decrease at a first predetermined temperature and a second predetermined temperature, which will be described later. The temperature difference is 50 ° C. or more with respect to the predetermined temperature. The outer shape of the second heat release sheet 20 may be a size that can cover the entire surface of the semiconductor element layer 15 of the semiconductor light emitting element wafer 10 and has a thickness of about 0.15 mm.

  The second support member 30 is a thin plate member made of a hard material such as sapphire (Al 2 O 3), has a size capable of covering the entire surface of the semiconductor element layer 15 of the semiconductor light emitting element wafer 10, and has a thickness of about 0.6 mm. Moreover, the 2nd support member 30 is set to the magnitude | size which can be accommodated in the basket 110 in surface treatment process S130 mentioned later.

  The first heat release sheet 40 is a thin plate-like member having flexibility, and is a double-sided pressure-sensitive adhesive sheet comprising a base material 41, a heat-release adhesive 42 and an adhesive 44, and has a so-called double-sided adhesive tape structure. have. The heat-peeling adhesive 42 is formed in a layered manner on the surface of the base material 41 on the second support member 30 side, and forms a heat-peeling surface 43. The heat-peeling adhesive 42 is set so that the adhesive strength is weakened when heated to 120 ° C. The adhesive 44 is formed in a layered manner on the surface of the base material 21 opposite to the surface on which the heat-peeling adhesive 42 is formed, which is the first support member 50 side described later. The adhesive surface 45 is formed. The adhesive 44 only needs to have an adhesive force that does not decrease at a first predetermined temperature and a second predetermined temperature, which will be described later. In Example 1, the adhesive 44 has a heat resistance of 200 ° C. or higher, and the second predetermined temperature. The temperature difference is 50 ° C. or more with respect to the predetermined temperature. The outer shape of the first thermal release sheet 40 may be a size that can cover the entire surface of the second support member 30, and the thickness is about 0.15 mm.

  The first support member 50 is made of a hard material such as ceramic, and is a plate-like member having a certain thickness so that it can withstand a grinding operation in a grinding step S110 described later, and has a circular shape with a diameter of about 250 mm. The thickness is about 20 mm.

(Work member forming step S100)
Next, the workpiece member forming step S100 shown in FIGS. 1 and 9 will be described.

  The first support member 50, the first heat release sheet 40, the second support member 30, the second heat release sheet 20, and the semiconductor light emitting element wafer 10 are stacked in this order to form the first work member 60. .

  Specifically, first, the first support member 50 is prepared. The first support member 50 is a jig provided in a grinding device 80 described later.

  Next, the first thermal release sheet 40 is attached so that the adhesive surface 45 on the adhesive 44 side of the first thermal release sheet 40 is in close contact with the first support member 50.

  Next, the first support member 30 is attached so that the second support member 30 is in close contact with the heat release surface 43 on the heat release adhesive 42 side of the first heat release sheet 40. That is, the surface facing the second support member 30 in the first thermal peeling sheet 40 is a thermal peeling surface 43 that peels at the first predetermined temperature. At this time, it is desirable that the entire surface with which the second support member 30 is in close contact is covered with the first thermal release sheet 40.

  Next, the adhesive surface 25 on the adhesive 24 side of the second thermal release sheet 20 is in close contact with the surface of the second support member 30 that is not covered with the first thermal release sheet 40. Similarly, the 2nd heat peeling sheet 20 is affixed.

  Next, the second heat release sheet 20 is attached so that the semiconductor element layer 15 side in the semiconductor light emitting element wafer 10 is in close contact with the heat release surface 23 on the heat release adhesive 22 side of the second heat release sheet 20. That is, the surface facing the semiconductor light emitting element wafer 10 in the second heat release sheet 20 is a heat release surface 23 that is peeled off at the second predetermined temperature. At this time, it is desirable that the entire surface with which the semiconductor element layer 15 side is in close contact is covered with the second thermal release sheet 20.

  In this way, the first work member 60 is formed.

(Grinding step S110)
Next, the grinding step S110 shown in FIGS. 2 and 9 will be described.

  As shown in FIG. 2, first, the first work member 60 is fixed to the support base 81 of the grinding device 80.

  Next, the rotating unit 82 of the grinding device 80 is rotated and brought into contact with the substrate 11 in the first work member 60, and the first surface 12 of the substrate 11 is ground until the substrate 11 has a desired thickness t. To do.

  Next, the first work member 60 is removed from the support base 81 of the grinding device 80, and the first work member 60 is cleaned so as to remove debris and the like generated in the grinding operation.

(First removal step S120)
Next, the first removal step S120 shown in FIGS. 3 and 9 will be described.

  As shown in FIG. 3, first, the first work member 60 is placed on the heater 90, and the first support member 50 is temporarily fixed to the heater 90.

  Next, using the heater 90, the ambient temperature of the first work member 60 is raised to a certain temperature so that the heat-peeling adhesive 42 of the first heat-peeling sheet 40 has a first predetermined temperature. And heat for a few seconds to a few minutes. In the first embodiment, the first predetermined temperature is 120 ° C., and the heating time at the constant temperature is 10 seconds.

  Then, when the adhesive force of the heat release adhesive 42 of the first heat release sheet 40 is weakened by heating to the first predetermined temperature, the first heat release sheet 40 is laminated on the upper side. The second work member 70 composed of the semiconductor light emitting element wafer 10, the second heat release sheet 20, and the second support member 30 is removed from the first work member 60. That is, the first support member 50 and the first heat release sheet 40 are removed from the first work member 60 to obtain the second work member 70.

(Surface treatment step S130)
Next, FIG.4 and FIG.9 demonstrates surface treatment process S130.

  As shown in FIG. 4, first, the second work member 70 is accommodated in the basket 110. The basket 110 is formed from a mesh-like member, and the material thereof is not particularly limited as long as it has a resistance not to be altered or dissolved by the solution 120 described later. The size of the basket 110 may be any size as long as the second work member 70 can be accommodated.

  Next, the basket 110 in which the second work member 70 is stored is inserted into the container 100 filled with the solution 120 in advance. The container 100 only needs to have a resistance not to be altered or dissolved by the solution 120. In Example 1, a glass beaker having a cylindrical shape with an outer diameter of about 90 mm and a height of about 120 mm is used. doing. Since the basket 110 is made of a mesh-shaped member as described above, the solution 120 also enters the inside of the basket 110. In this way, the entire second work member 70 is immersed in the solution 120.

  Next, the surface of the first surface 12 of the substrate 11 in the second work member 70 is modified or cleaned while stirring the solution 120 using the stirring device 130.

  This surface treatment is called HACE (Heating Assisted Chemical Etching) treatment and is a kind of wet etching. This HACE process is particularly effective when an antireflection film, which will be described later, is formed on the substrate 11 using an ALD (Atomic Layer Deposition) apparatus as will be described later. This is useful as a pretreatment to improve the adhesion of 140. The solution 120 in the HACE treatment is an aqueous solution having a TMAH (tetramethylammonium hydroxide) concentration of 22%, and is heated to 60 ° C. for use. The time for immersing the second work member 70 in the solution 120 is 60 minutes.

  When the surface treatment is completed, the second work member 70 is taken out of the container 100 for each basket 110, and cleaning is performed to remove the solution 120 adhering to the second work member 70, residues generated in the surface treatment, and the like.

(Functional film forming step S140)
Next, the functional film formation step S140 will be described with reference to FIGS.

  As shown in FIG. 5, first, the second work member 70 is temporarily fixed to the support base 150 of the ALD apparatus.

  Next, the functional film 140 is formed on the surface of the first surface 12 of the substrate 11 in the second work member 70 using an ALD apparatus. The functional film 140 is an antireflection film made of a metal material containing aluminum, such as alumina (Al 2 O 3). Note that when the functional film 140 is formed using an ALD apparatus, since the material of the functional film 140 is excellent in wraparound, the functional film 140 is also formed on the side surface of the semiconductor light emitting element wafer 10 as shown in FIG. Is done. If the functional film 140 is formed by placing only the semiconductor light emitting element wafer 10 in the ALD apparatus, there is a concern that the material of the functional film 140 may reach the surface of the semiconductor element layer 15 and be deposited. In the second work member 70, the second thermal release sheet 20 is attached so as to cover the entire surface of the semiconductor element layer 15, so that the material of the functional film 140 wraps around the surface of the semiconductor element layer 15. It is suppressed that it accumulates by.

  When the functional film 140 is formed, the second work member 70 is removed from the support base 150 of the ALD apparatus.

(Modified part forming step S150)
Next, the modified portion forming step S150 will be described with reference to FIGS.

  As shown in FIG. 6, first, the second work member 70 is temporarily fixed to the support base 160 of the laser irradiation apparatus.

  Next, laser light is irradiated toward the inside of the substrate 11 to form the modified portion 14 inside the substrate 11. In the separation step S170, which will be described later, the modifying unit 14 is provided at a portion that becomes a boundary between the semiconductor light emitting elements in order to facilitate separation when the semiconductor light emitting element wafer 10 is separated into individual semiconductor light emitting elements. It is formed. By this modification, the modified portion 14 is weakened in mechanical strength as compared with other parts of the substrate 11.

  When the modified portion 14 is formed inside the substrate 11, the second work member 70 is removed from the support base 160 of the laser irradiation apparatus.

(Second removal step S160)
Next, the second removal step S160 shown in FIGS. 7 and 9 will be described.

  As shown in FIG. 7, first, the second work member 70 is placed on the heater 90, and the second support member 30 is temporarily fixed to the heater 90.

  Next, using the heater 90, the ambient temperature of the second workpiece member 70 is raised to a certain temperature so that the heat-peeling adhesive 22 of the second heat-peeling sheet 20 has a second predetermined temperature. And heat for a few seconds to a few minutes. In Example 1, the second predetermined temperature is 150 ° C., and the heating time at the constant temperature is 10 seconds. The temperature difference between the first predetermined temperature and the second predetermined temperature is preferably set to 20 ° C. or higher and 110 ° C. or lower. In consideration of the influence of the thermal history on the semiconductor element, it is more desirable that the temperature difference is 25 ° C. or more and 40 ° C. or less. In the first embodiment, the temperature difference is 30 ° C. The upper limit of the second predetermined temperature is preferably less than 250 ° C., and more preferably less than 200 ° C.

  Next, when the adhesive force of the heat-peeling adhesive 22 of the second heat-peeling sheet 20 is weakened by heating at a second predetermined temperature, the semiconductor light emitting layered above the second heat-peeling sheet 20 is laminated. The element wafer 10 is removed from the second work member 70. That is, the second support member 30 and the second heat release sheet 20 are removed from the second work member 70.

  Next, the semiconductor light emitting element wafer 10 is affixed onto the dicing tape 170 and temporarily fixed toward a separation step S170 described later.

(Separation step S170)
Next, the separation step S170 shown in FIGS. 8 and 9 will be described.

  As shown in FIG. 8, first, the semiconductor light emitting element wafer 10 to which the dicing tape 170 is attached is placed on the support stand 180 of the separation apparatus, and the dicing tape 170 is temporarily fixed to the support stand 180 of the separation apparatus.

  Next, the semiconductor light emitting element wafer 10 is separated into individual semiconductor light emitting elements along the modified portion 14 formed inside the substrate 11 using the blade 190 of the separating apparatus.

  As described above, the semiconductor light emitting device is manufactured.

As mentioned above, although the manufacturing method of the semiconductor light-emitting device has been described based on FIG. 1 to FIG. 9, in carrying out the present invention, the manufacturing method and a part of the configuration can be appropriately changed as follows. . Listed in the bulleted list below.
Although a method for manufacturing a semiconductor light emitting device is illustrated, this manufacturing method is not limited to a semiconductor light emitting device, but can be applied to various semiconductor element wafers such as a semiconductor device for a power device for a power control system. is there. Further, the semiconductor light emitting element is not limited to the flip chip type element, but can be applied to a face up type element (FU element).
-Although the gallium nitride (GaN) is illustrated as a material of the board | substrate 11, not only this but sapphire (Al2O3), silicon carbide (SiC), etc. may be used and it does not specifically limit.
-Although gallium nitride (GaN) is illustrated as a material of the semiconductor element layer 15, it is not restricted to this, The semiconductor layer which consists of other materials including nitrogen compound type | system | group may be sufficient and is not specifically limited.
The second heat release sheet 20 has the heat release adhesive 22 formed on the semiconductor element layer 15 side, but if the heat release from the semiconductor element layer 15 is not taken into consideration, the second heat release sheet 20 is formed on the semiconductor element layer 15 side. It is good also as forming the adhesive agent 24 and forming the heat peeling adhesive 22 in the 2nd supporting member 30 side. Alternatively, the adhesive 24 may be replaced with the heat release adhesive 22 to form the heat release adhesive 22 on both surfaces of the second heat release sheet 20. Furthermore, when forming the heat-release adhesive 22 on both surfaces of the second heat-release sheet 20, the temperature is higher than the first predetermined temperature at which the heat-release adhesive 42 of the first heat-release sheet 40 is peeled off. If there is, the second predetermined temperature at which the thermal peeling adhesive 22 peels may be different between the semiconductor element layer 15 side and the second support member 30 side. The thermal peeling adhesive 22 is set so that the adhesiveness is weakened when heated to 150 ° C. as the second predetermined temperature. This temperature is considered in consideration of the heat resistance of the semiconductor light emitting element wafer 10. May be changed as appropriate.
-Although sapphire (Al2O3) is illustrated as a material of the 2nd support member 30, it can endure the solution 120 of surface treatment process S130, and the semiconductor light emitting element wafer 10 is damaged at the time of the support conveyance of the 2nd workpiece member 70 The material is not particularly limited as long as it is a hard material capable of suppressing the above. The size of the second support member 30 is not particularly limited as long as the entire surface of the semiconductor light emitting element wafer 10 can be covered and stored in the basket 110.
The first thermal release sheet 40 has the thermal release adhesive 42 formed on the second support member 30 side, but if the thermal release from the second support member 30 is not considered, The adhesive 44 may be formed on the support member 30 side, and the thermal peeling adhesive 42 may be formed on the first support member 50 side. Alternatively, the adhesive 44 may be replaced with the heat release adhesive 42 to form the heat release adhesive 42 on both surfaces of the first heat release sheet 40. Furthermore, when forming the heat release adhesive 42 on both surfaces of the first heat release sheet 40, the temperature is lower than a second predetermined temperature at which the heat release adhesive 22 of the second heat release sheet 20 is peeled off. If there is, the first predetermined temperature at which the heat-peeling adhesive 42 peels may be different between the second support member 30 side and the first support member 50 side. Further, the heat-peeling adhesive 22 is set so that the adhesiveness is weakened when heated to 120 ° C. as the first predetermined temperature, but the heat received in the process before the first removal process S110 is taken into consideration. The temperature may be changed as appropriate.
-Although the ceramic is illustrated as a material of the 1st supporting member 50, as long as it is a hard material which can endure the grinding operation | work in grinding process S110, a material will not be specifically limited. Further, the size of the first support member 50 is not particularly limited as long as it can withstand the grinding work in the grinding step S110. Further, the first support member 50 is illustrated as a jig / tool itself of the grinding device 80, but may be a member attached to the jig / tool or a member attached to the support base 81 in place of the jig / tool. good.
-About the 1st workpiece member 60, if the final lamination order of each structural member does not change, you may change the formation sequence in workpiece member formation process S100 arbitrarily.
As the heater 90, a device that can be heated as appropriate, such as a hot plate, a hot air dryer, and a thermostatic bath, may be used.
In the first removal step S120, the first support member 50 and the first heat release sheet 40 are removed. If the second work member 70 can be stored in the basket 110, Instead of removing the first thermal release sheet, only the first support member 50 may be removed.
-It is good also as an aspect which accommodates the 2nd workpiece member 70 directly in the inside of the container 100, without using the basket 110. FIG.
As the functional film 140, an antireflection film made of alumina (Al2O3) is illustrated, but other materials may be used as long as they have an antireflection function. In the case of a flip-chip type semiconductor light emitting device (FC device) as in the first embodiment of the present invention, the functional film 140 is made of a phosphor layer (wavelength conversion layer) or a light scattering layer (light diffusion layer). And so on. Further, in the case of a face-up type semiconductor light emitting element (FU element), the functional film 140 may be a reflective film such as DBR (Distributed Bragg Reflector). Further, in the case of a so-called vertical semiconductor light emitting device or a vertical semiconductor device, the functional film 140 may be an electrode layer.
In the second removal step S <b> 160, when the second heat release sheet 20 and the second support member 30 are removed from the semiconductor light emitting element wafer 10, before the semiconductor light emitting element wafer 10 is attached to the dicing tape 170. The semiconductor light emitting element wafer 10 may be cleaned such as organic cleaning.
In the second removal step S160, only the second support member 30 is removed from the semiconductor light emitting element wafer 10, and the second thermal release sheet 20 is left without being peeled off, and the dicing tape 170 may be used instead. .

  In the present invention, a flip chip type semiconductor light emitting element is taken as an example and a manufacturing method thereof is described. However, the semiconductor element to which the present invention is applicable is not limited to this.

10: Semiconductor light emitting device wafer (Example 1)
11 ... Substrate (in semiconductor light emitting element wafer 10) 12 ... First surface (in substrate 11) 13 ... Second surface (in substrate 11) 14 ... ( Modified portion 15 on substrate 11... Semiconductor element layer 20 on semiconductor light emitting device wafer 10... Second thermal release sheet 21... (Of second thermal release sheet 20) Substrate 22 ... Thermal release adhesive (of second thermal release sheet 20) 23 ... Thermal release surface of (second thermal release sheet 20) 24 ... (Second thermal release sheet 20) ) Adhesive 25 ... Adhesive surface (of the second thermal release sheet 20) 30 ... Second support member 40 ... First thermal release sheet 41 ... (First thermal release sheet 40) (Of the first heat-peeling sheet 40) heat-peeling adhesive 43 (...) (first) Thermal release surface 44 (of the first thermal release sheet 40) 44 ... Adhesive (of the first thermal release sheet 40) 45 ... Adhesive surface (of the first thermal release sheet 40) 50 ... First support member 60... First work member 70... Second work member 80... Grinding device 81... (In grinding device 80) support stand 82... (In grinding device 80) Rotating part 90 ... Heater 100 ... Container 110 ... Basket 120 ... Solution 130 ... Stirrer 140 ... Functional film 150 ... ALD apparatus support stand 160 ... Laser irradiation Supporting base of apparatus 170 ・ ・ ・ Dicing tape 180 ・ ・ ・ Supporting base of separation apparatus 190 ・ ・ ・ Blade of separation apparatus S100 ・ ・ ・ Workpiece member forming process S110 ・ ・ ・ Grinding process S120 ・ ・ ・ First removal work Step S130 ... Surface treatment step S140 ... Functional film formation step S150 ... Modified part formation step S160 ... Second removal step S170 ... Separation step t ... Thickness

Claims (6)

A first support member;
A first thermal release sheet;
A second support member;
A second thermal release sheet;
A semiconductor element wafer having a substrate,
A work member forming a first work member laminated in the order of the first support member, the first heat release sheet, the second support member, the second heat release sheet, and the semiconductor element wafer. Forming process;
After the workpiece member forming step, a grinding step of grinding the first surface of the substrate in the first workpiece member and grinding the substrate to a predetermined thickness;
After the grinding step, at least the first thermal release sheet is heated to a first predetermined temperature to remove at least the first support member from the first work member, A first removal step to
After the first removal step, a surface treatment step for modifying or cleaning the first surface of the substrate in the second workpiece member;
A second removal step of removing at least the second support member from the second work member by heating at least the second thermal release sheet to a second predetermined temperature after the surface treatment step; Have
The method for manufacturing a semiconductor device, wherein the first predetermined temperature is lower than the second predetermined temperature.   2. The method of manufacturing a semiconductor element according to claim 1, wherein a temperature difference between the first predetermined temperature and the second predetermined temperature is 25 ° C. or more and 110 ° C. or less.   3. The semiconductor element manufacturing according to claim 1, wherein at least a surface facing the semiconductor element wafer is a surface to be peeled at a second predetermined temperature. Method.   The functional film forming step of forming a functional film on at least the first surface of the substrate after the surface treatment step and prior to the second removing step. Item 4. The method for manufacturing a semiconductor element according to any one of Items 3 to 3.   5. The method according to claim 1, further comprising a modified portion forming step of forming a modified portion on at least the substrate after the surface treatment step and prior to the second removing step. A method for manufacturing a semiconductor device according to claim 1.   2. The method according to claim 1, further comprising a separation step of separating the semiconductor element wafer into individual semiconductor elements after the second removal step, leaving the second thermal release sheet. 6. The method for producing a semiconductor element according to any one of items 5.

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