JP2017005195A - Substrate processing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suitably suppress the invasion of the atmosphere from the external space.SOLUTION: In the substrate processing device, a labyrinth 57 is provided around a processing liquid nozzle 71 above a nozzle gap 56. By supplying a sealing gas to the labyrinth 57, the nozzle gap 56 is sealed from the external space. In the substrate processing device, for example, when the pressure of the labyrinth 57 is lower than the pressure of the external space by a predetermined pressure difference or more, the flow rate of the seal gas supplied to the labyrinth 57 is increased by a seal gas flow rate control unit, so that the strength of the seal in the labyrinth 57 is improved. In this way, by controlling the flow rate of the seal gas supplied to the labyrinth 57 on the basis of the relative relationship between the pressure of the labyrinth 57 and the pressure of the external space by the seal gas flow rate control unit, the atmosphere in the external space is suitably suppressed from entering the labyrinth 57. As a result, intrusion of the atmosphere from the external space into the processing space 90 can be suitably suppressed.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a substrate processing apparatus for processing a substrate.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the substrate. For example, a chemical solution treatment such as etching is performed on the surface of the substrate by supplying the chemical solution onto the substrate having a resist pattern formed on the surface. In addition, after the chemical liquid processing is finished, a cleaning liquid is supplied onto the substrate to perform the cleaning processing, and then the substrate is dried.

In the substrate cleaning apparatus of Patent Document 1, a lid member is placed on a spin chuck that holds a wafer horizontally and rotates together with the wafer. In the substrate cleaning process, first, a cleaning liquid is supplied onto the rotating substrate from an upper nozzle that is spaced above the lid member through an opening provided at the rotation center of the lid member. The As the cleaning liquid, hydrofluoric acid, hydrochloric acid, sulfuric acid, phosphoric acid, ammonia, hydrogen peroxide water, or the like is used. Subsequently, by supplying pure water from the upper nozzle onto the rotating substrate, the cleaning liquid adhering to the substrate is washed away. Thereafter, during the substrate drying process, nitrogen (N ₂ ) gas is discharged from the upper nozzle and supplied onto the wafer through the opening of the lid member. Thereby, the oxygen concentration in the space between the lid member and the wafer can be reduced, and the drying of the substrate can be promoted.

  Similarly, in the substrate peripheral edge processing apparatus of Patent Document 2, a blocking plate is placed on a spin chuck that holds the wafer horizontally, and rotates together with the wafer. A through hole is provided in the center of the blocking plate, and a flange pipe having an internal space communicating with the through hole is coupled to the upper surface of the blocking plate. A shield plate flange having a through hole in the center is coupled to the upper end of the flange pipe. When retracting the shield plate from above the spin chuck, the shield plate hand is raised to hold the shield plate flange from below, and further lifted to separate the shield plate upward from the spin chuck.

  A central axis nozzle is arranged in a non-contact state with the flange pipe in the internal space of the flange pipe. When wafer processing is performed, a process gas such as nitrogen gas is supplied from the central axis nozzle to the space between the shielding plate and the wafer. A blocking side labyrinth member is fixed to the upper surface of the blocking plate flange, and the nozzle side labyrinth member is disposed in a non-contact state with the blocking side labyrinth member above the blocking side labyrinth member. The nozzle side labyrinth member is fixed to a nozzle holding part that holds the central axis nozzle, and moves up and down together with the central axis nozzle and the nozzle holding part. A seal gas such as dry air is supplied to the space between the nozzle side labyrinth member and the blocking side labyrinth member.

Japanese Patent No. 3621568 JP 2014-30045 A

  By the way, in the substrate cleaning apparatus of Patent Document 1, there is a possibility that an atmosphere outside the space may enter the space between the lid member and the wafer from the opening of the lid member. On the other hand, in the substrate peripheral edge processing apparatus of Patent Document 2, the seal gas is supplied to the space between the blocking-side labyrinth member and the nozzle-side labyrinth member, so that the gap between the blocking plate and the wafer is from the through hole of the blocking plate. The atmosphere outside the space is prevented from entering the space. However, if the pressure in the space between the shielding plate and the wafer fluctuates and becomes lower than the external pressure, the seal in the labyrinth may be broken and an external atmosphere may enter the space.

  This invention is made | formed in view of the said subject, and aims at suppressing suitably the penetration | invasion of the atmosphere from external space.

  The invention according to claim 1 is a substrate processing apparatus for processing a substrate, wherein the substrate holding unit that holds the substrate in a horizontal state, and the substrate is rotated together with the substrate holding unit about a central axis that faces in a vertical direction. A substrate rotating mechanism, a counter member main body facing the upper surface of the substrate and having a counter member opening at the center, and a cylindrical counter member protruding upward from the periphery of the counter member opening of the counter member main body A counter member having a cylindrical portion; a processing liquid nozzle inserted into the counter member cylindrical portion and supplying a processing liquid to the upper surface of the substrate through the counter member opening; and between the counter member and the substrate A gas supply unit that supplies a gas for processing atmosphere to the space, and a nozzle gap that is a space between the processing liquid nozzle and the opposed member cylinder, and the nozzle gap is formed by supplying a sealing gas. It comprises a labyrinth sealing the part space, the pressure of the labyrinth on the basis of the relationship between the pressure in the external space, and a seal gas flow rate control unit for controlling the flow rate of the seal gas supplied to the labyrinth.

  A second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein the relative relationship varies due to a pressure variation in the nozzle gap.

  A third aspect of the present invention is the substrate processing apparatus according to the second aspect, wherein the gas for processing atmosphere is inclined obliquely downward from a side surface of the processing liquid nozzle to the nozzle gap by the gas supply unit. When the flow rate of the processing atmosphere gas that is injected toward the nozzle gap fluctuates, the seal gas is based on the pressure fluctuation in the nozzle gap that is caused by the flow rate fluctuation of the processing atmosphere gas. A flow rate controller controls the flow rate of the seal gas.

  The invention according to claim 4 is the substrate processing apparatus according to claim 2 or 3, wherein when the rotation speed of the substrate by the substrate rotation mechanism fluctuates, the nozzle gap generated by the fluctuation of the rotation speed. The seal gas flow rate control unit controls the flow rate of the seal gas based on the pressure fluctuation.

  A fifth aspect of the present invention is the substrate processing apparatus according to any one of the second to fourth aspects, wherein when the type of processing on the substrate changes, the nozzle gap generated due to the change in the type of processing. Based on the pressure fluctuation, the seal gas flow rate control unit controls the flow rate of the seal gas.

  A sixth aspect of the present invention is the substrate processing apparatus according to any one of the first to fifth aspects, wherein a first pressure measuring unit that measures the pressure of the labyrinth and a first pressure measuring unit that measures the pressure of the external space. A second pressure measurement unit, and the relative relationship is acquired based on outputs of the first pressure measurement unit and the second pressure measurement unit.

  A seventh aspect of the present invention is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the gas in the labyrinth is sucked at the end of the labyrinth on the outer space side.

  An eighth aspect of the present invention is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the opposing member is held, and a first position in a vertical direction and a position lower than the first position. A counter member moving mechanism that moves the counter member relative to the substrate holding portion relative to the second position, wherein the counter member is radially outward from an upper end portion of the counter member cylinder portion. And an opposing member flange portion that is annularly spread toward the opposite direction and is held by the opposing member moving mechanism, and a first uneven portion in which concave portions and convex portions are alternately arranged concentrically on the upper surface of the opposing member flange portion. The counter member moving mechanism includes a lower surface of the counter member flange portion and the lower portion of the holding portion facing the vertical direction, an upper surface of the counter member flange portion and the upper portion of the holding portion facing the vertical direction, and the holding On the bottom of the upper part In the state where the concave and convex portions are alternately arranged in concentric circles, and the opposing member is located at the first position, the opposing member flange portion is lowered by the lower portion of the holding portion. By being supported from the side, the facing member is held by the facing member moving mechanism and separated upward from the substrate holding portion, and the facing member is positioned at the second position. , Separated from the opposing member moving mechanism, held by the substrate holding portion, and rotated together with the substrate holding portion by the substrate rotating mechanism, and the other in one recess of the first uneven portion and the second uneven portion The labyrinth is formed by arranging the convex portions with a gap.

  In the present invention, it is possible to suitably suppress the intrusion of the atmosphere from the external space.

It is sectional drawing of the substrate processing apparatus which concerns on one embodiment. It is sectional drawing of a substrate processing apparatus. It is sectional drawing which expands and shows a part of top plate and opposing member moving mechanism. It is a top view of a gas supply path. It is a block diagram which shows a gas-liquid supply part. It is sectional drawing which expands and shows a part of process liquid nozzle. It is a figure which shows the flow of a process of a board | substrate. It is sectional drawing of a substrate processing apparatus. It is sectional drawing which shows the example of another labyrinth. It is sectional drawing which shows the example of another labyrinth.

  FIG. 1 is a cross-sectional view showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that processes semiconductor substrates 9 (hereinafter simply referred to as “substrates 9”) one by one. The substrate processing apparatus 1 includes a substrate holding unit 31, a substrate rotating mechanism 33, a cup unit 4, a top plate 5, a counter member moving mechanism 6, and a processing liquid nozzle 71.

  The substrate holding unit 31 holds the substrate 9 in a horizontal state. The substrate holding part 31 includes a holding base part 311, a plurality of chucks 312, a plurality of engaging parts 313, and a base support part 314. The substrate 9 is disposed above the holding base portion 311. Each of the holding base portion 311 and the base support portion 314 is a substantially disk-shaped member centered on a central axis J1 that faces in the vertical direction. The holding base portion 311 is disposed above the base support portion 314 and supported from below by the base support portion 314. The outer diameter of the holding base portion 311 is larger than the outer diameter of the base support portion 314. The holding base portion 311 extends radially outward from the base support portion 314 over the entire circumference in the circumferential direction around the central axis J1.

  The plurality of chucks 312 are arranged in the circumferential direction on the outer peripheral portion of the upper surface of the holding base portion 311 at substantially equal angular intervals around the central axis J1. In the substrate holding portion 31, the outer edge portion of the substrate 9 is supported by the plurality of chucks 312. The plurality of engaging portions 313 are arranged in the circumferential direction on the outer peripheral portion of the upper surface of the holding base portion 311 at substantially equal angular intervals around the central axis J1. The plurality of engaging portions 313 are disposed on the radially outer side than the plurality of chucks 312.

  The substrate rotation mechanism 33 is accommodated in the rotation mechanism accommodation portion 34. The substrate rotation mechanism 33 and the rotation mechanism accommodation unit 34 are disposed below the substrate holding unit 31. The substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holder 31 around the central axis J1.

  The cup portion 4 is an annular member centered on the central axis J <b> 1 and is disposed on the radially outer side of the substrate 9 and the substrate holding portion 31. The cup unit 4 is disposed over the entire periphery of the substrate 9 and the substrate holding unit 31 and receives a processing liquid and the like that scatters from the substrate 9 toward the periphery. The cup unit 4 includes a first guard 41, a second guard 42, a guard moving mechanism 43, and a discharge port 44.

  The first guard 41 includes a first guard side wall portion 411 and a first guard canopy portion 412. The 1st guard side wall part 411 is the substantially cylindrical shape centering on the central axis J1. The first guard canopy portion 412 has a substantially annular plate shape centered on the central axis J <b> 1 and extends radially inward from the upper end portion of the first guard side wall portion 411. The second guard 42 has a second guard side wall 421 and a second guard canopy 422. The second guard side wall portion 421 has a substantially cylindrical shape with the central axis J1 as the center, and is located on the radially outer side than the first guard side wall portion 411. The second guard canopy portion 422 has a substantially annular plate shape centered on the central axis J1, and extends radially inward from the upper end portion of the second guard side wall portion 421 above the first guard canopy portion 412. . The inner diameter of the first guard canopy portion 412 and the inner diameter of the second guard canopy portion 422 are slightly larger than the outer diameter of the holding base portion 311 of the substrate holding portion 31 and the outer diameter of the top plate 5.

  The guard moving mechanism 43 switches between the first guard 41 and the second guard 42 by moving the first guard 41 in the vertical direction to receive the processing liquid and the like from the substrate 9. The processing liquid received by the first guard 41 and the second guard 42 of the cup portion 4 is discharged to the outside of the housing 11 through the discharge port 44. Further, the gas in the first guard 41 and the second guard 42 is also discharged to the outside of the housing 11 through the discharge port 44.

  The top plate 5 is a substantially circular member in plan view. The top plate 5 is a facing member that faces the upper surface 91 of the substrate 9, and is a shielding plate that shields the upper side of the substrate 9. The outer diameter of the top plate 5 is larger than the outer diameter of the substrate 9 and the outer diameter of the holding base portion 311. The top plate 5 includes a counter member main body 51, a held portion 52, a plurality of engaging portions 53, and a first uneven portion 55. The counter member main body 51 includes a counter member canopy 511 and a counter member side wall 512. The facing member canopy portion 511 is a substantially annular plate-shaped member centered on the central axis J <b> 1 and faces the upper surface 91 of the substrate 9. A counter member opening 54 is provided at the center of the counter member canopy 511. The facing member opening 54 is, for example, substantially circular in plan view. The diameter of the facing member opening 54 is sufficiently smaller than the diameter of the substrate 9. The opposing member side wall portion 512 is a substantially cylindrical member centered on the central axis J1 and extends downward from the outer peripheral portion of the opposing member canopy portion 511.

  The plurality of engaging portions 53 are arranged in the circumferential direction on the outer peripheral portion of the lower surface of the facing member canopy portion 511 at substantially equal angular intervals around the central axis J1. The plurality of engaging portions 53 are disposed on the radially inner side of the opposing member side wall portion 512.

  The held portion 52 is connected to the upper surface of the opposing member main body 51. The held portion 52 includes a counter member cylinder portion 521 and a counter member flange portion 522. The opposing member cylinder 521 is a substantially cylindrical portion that protrudes upward from the periphery of the opposing member opening 54 of the opposing member main body 51. The opposing member cylinder 521 has, for example, a substantially cylindrical shape with the central axis J1 as the center. The opposing member flange portion 522 extends in an annular shape outward in the radial direction from the upper end portion of the opposing member cylinder portion 521. The opposing member flange portion 522 has, for example, a substantially annular plate shape centered on the central axis J1. On the upper surface of the opposed member flange portion 522, first concave and convex portions 55 are provided in which circumferential concave portions and circumferential convex portions are alternately arranged concentrically. The first uneven portion 55 has a plurality of concave portions and a plurality of convex portions. Among the plurality of concave portions, the innermost concave portion 551 is provided in the upper portion of the opposed member cylinder portion 521 and is larger in the vertical direction than the other concave portions of the first uneven portion 55.

  The counter member moving mechanism 6 includes a counter member holding portion 61 and a counter member lifting mechanism 62. The facing member holding portion 61 holds the held portion 52 of the top plate 5. The opposing member holding part 61 includes a holding part main body 611, a main body support part 612, a flange support part 613, a support part connection part 614, and a second uneven part 615. The holding part main body 611 has, for example, a substantially disc shape centered on the central axis J1. The holding part main body 611 covers the upper side of the opposing member flange part 522 of the top plate 5. The main body support 612 is a rod-like arm that extends substantially horizontally. One end portion of the main body support portion 612 is connected to the holding portion main body 611, and the other end portion is connected to the opposing member lifting mechanism 62.

  The treatment liquid nozzle 71 protrudes downward from the central part of the holding part main body 611. The treatment liquid nozzle 71 is inserted into the opposing member cylinder 521 in a non-contact state. In the following description, a space between the processing liquid nozzle 71 and the counter member cylinder 521 is referred to as a “nozzle gap 56”. Around the treatment liquid nozzle 71, there are provided second concavo-convex portions 615 in which circumferential concave portions and circumferential convex portions are alternately arranged concentrically on the lower surface of the holding portion main body 611. The 2nd uneven part 615 opposes the 1st uneven part 55 in the up-and-down direction.

  The flange support portion 613 has, for example, a substantially annular plate shape centered on the central axis J1. The flange support portion 613 is located below the opposing member flange portion 522. The inner diameter of the flange support portion 613 is smaller than the outer diameter of the opposing member flange portion 522 of the top plate 5. The outer diameter of the flange support portion 613 is larger than the outer diameter of the opposing member flange portion 522 of the top plate 5. The support part connection part 614 has, for example, a substantially cylindrical shape centered on the central axis J1. The support part connection part 614 connects the flange support part 613 and the holding part main body 611 around the opposing member flange part 522. In the facing member holding portion 61, the holding portion main body 611 is a holding portion upper portion that faces the upper surface of the facing member flange portion 522 in the vertical direction, and the flange support portion 613 is held facing the lower surface of the facing member flange portion 522 in the vertical direction. It is the lower part.

  In the state where the top plate 5 is located at the position shown in FIG. 1, the flange support portion 613 supports the outer peripheral portion of the opposing member flange portion 522 of the top plate 5 in contact with the lower side. In other words, the facing member flange portion 522 is held by the facing member holding portion 61 of the facing member moving mechanism 6. Accordingly, the top plate 5 is suspended by the counter member holding portion 61 above the substrate 9 and the substrate holding portion 31. In the following description, the vertical position of the top plate 5 shown in FIG. 1 is referred to as “first position”. The top plate 5 is held by the facing member moving mechanism 6 at the first position and is separated upward from the substrate holding portion 31. Further, in the state where the top plate 5 is located at the first position, the lower end of the convex portion of the second uneven portion 615 is located above the upper end of the convex portion of the first uneven portion 55.

  The flange support part 613 is provided with a movement restricting part 616 that restricts displacement of the top plate 5 (that is, movement and rotation of the top plate 5). In the example shown in FIG. 1, the movement restricting portion 616 is a protruding portion that protrudes upward from the upper surface of the flange support portion 613. When the movement restricting portion 616 is inserted into the hole provided in the facing member flange portion 522, the displacement of the top plate 5 is restricted.

  The facing member lifting mechanism 62 moves the top plate 5 in the vertical direction together with the facing member holding portion 61. FIG. 2 is a cross-sectional view showing a state in which the top plate 5 is lowered from the first position shown in FIG. In the following description, the vertical position of the top plate 5 shown in FIG. 2 is referred to as a “second position”. That is, the opposing member lifting mechanism 62 moves the top plate 5 in the vertical direction relative to the substrate holder 31 between the first position and the second position. The second position is a position below the first position. In other words, the second position is a position where the top plate 5 is closer to the substrate holding portion 31 in the vertical direction than the first position.

  In a state where the top plate 5 is located at the second position, the plurality of engaging portions 53 of the top plate 5 are engaged with the plurality of engaging portions 313 of the substrate holding portion 31, respectively. The plurality of engaging portions 53 are supported from below by the plurality of engaging portions 313. In other words, the plurality of engaging portions 313 are opposing member support portions that support the top plate 5. For example, the engaging portion 313 is a pin that is substantially parallel to the vertical direction, and the upper end portion of the engaging portion 313 is fitted into a recess formed upward at the lower end portion of the engaging portion 53. Further, the opposing member flange portion 522 of the top plate 5 is spaced upward from the flange support portion 613 of the opposing member holding portion 61. As a result, the top plate 5 is held by the substrate holding portion 31 and is separated from the opposing member moving mechanism 6 at the second position (that is, is not in contact with the opposing member moving mechanism 6).

  In a state where the top plate 5 is held by the substrate holding portion 31, the lower end of the opposing member side wall portion 512 of the top plate 5 is below the upper surface of the holding base portion 311 of the substrate holding portion 31 or the holding base portion 311. It is located at the same position with respect to the upper surface and the vertical direction. When the substrate rotation mechanism 33 is driven in a state where the top plate 5 is located at the second position, the top plate 5 rotates together with the substrate 9 and the substrate holder 31. In other words, in a state where the top plate 5 is located at the second position, the top plate 5 can be rotated about the central axis J1 together with the substrate 9 and the substrate holding part 31 by the substrate rotating mechanism 33.

  FIG. 3 is an enlarged cross-sectional view showing a part of the top plate 5 and the opposed member moving mechanism 6. As shown in FIGS. 2 and 3, in a state where the top plate 5 is located at the second position, the first uneven portion 55 and the second uneven portion 615 are close to each other in the vertical direction in a non-contact state. The convex portion of the first concave and convex portion 55 is disposed in the concave portion of the second concave and convex portion 615 via a gap, and the convex portion of the second concave and convex portion 615 is disposed in the concave portion of the first concave and convex portion 55 via the gap. The In other words, the other convex portion is disposed in one concave portion of the first concave and convex portion 55 and the second concave and convex portion 615 with a gap therebetween. Accordingly, a labyrinth 57 is formed between the opposing member flange portion 522 of the top plate 5 and the holding portion main body 611 of the opposing member moving mechanism 6 around the processing liquid nozzle 71. In the entire labyrinth 57, the vertical distance and the radial distance between the first uneven portion 55 and the second uneven portion 615 are approximately constant. The labyrinth 57 continues to the nozzle gap 56. When the top plate 5 rotates, the first uneven portion 55 rotates and the second uneven portion 615 does not rotate.

  As shown in FIG. 3, a gas supply path 58 connected to the labyrinth 57 is provided inside the facing member holding portion 61. 1 and 2, the gas supply path 58 is not shown. FIG. 4 is a plan view showing the gas supply path 58. As shown in FIGS. 3 and 4, the gas supply path 58 includes a first flow path 581, a first manifold 582, a plurality of second flow paths 583, a second manifold 584, and a plurality of gas injection ports 585. With. The first manifold 582, the plurality of second flow paths 583, and the second manifold 584 are formed inside the holding portion main body 611, and the plurality of gas injection ports 585 are formed on the lower surface of the holding portion main body 611. The first flow path 581 is formed inside the main body support portion 612.

  The plurality of gas injection ports 585 are arranged in the circumferential direction at substantially equal angular intervals on the upper surface of one concave portion of the second uneven portion 615 (that is, the bottom surface of the concave portion). The plurality of gas injection ports 585 are circumferential injection ports arranged circumferentially around the central axis J1. The circumferential injection port is disposed between the radial inner end and the radial outer end of the labyrinth 57. In the gas supply path 58, for example, one substantially annular injection port centered on the central axis J1 may be provided as a circumferential injection port instead of the plurality of gas injection ports 585.

  The second manifold 584 is disposed above the plurality of gas injection ports 585 and connected to the plurality of gas injection ports 585. The second manifold 584 is a substantially annular flow path centered on the central axis J1. The first manifold 582 is disposed on the radially outer side of the second manifold 584. The first manifold 582 is a substantially annular flow path centered on the central axis J1. The plurality of second flow paths 583 are linear flow paths extending substantially in the radial direction, and connect the first manifold 582 and the second manifold 584. In the example shown in FIG. 4, four second flow paths 583 are arranged in the circumferential direction at substantially equal angular intervals. The first flow path 581 extends radially outward from the first manifold 582. The first flow path 581 is disposed at a position different from the plurality of second flow paths 583 in the circumferential direction.

  As shown in FIG. 3, the substrate processing apparatus 1 further includes a first pressure measurement unit 751 and a second pressure measurement unit 752. The first pressure measurement unit 751 measures the pressure of the labyrinth 57. The first pressure measurement unit 751 is, for example, a pressure gauge attached to the upper side of the holding unit body 611 of the facing member holding unit 61. The second pressure measurement unit 752 measures the pressure in an external space (hereinafter referred to as “external space”) other than the processing space 90 that is a space between the nozzle gap 56 and the top plate 5 and the substrate 9. The second pressure measurement unit 752 is, for example, a pressure gauge attached to the outer side in the radial direction of the support unit connection unit 614 of the facing member holding unit 61. In FIGS. 1 and 2, the first pressure measuring unit 751 and the second pressure measuring unit 752 are not shown (the same applies to FIG. 8).

  FIG. 5 is a block diagram showing the gas-liquid supply unit 7 related to the supply of gas and processing liquid in the substrate processing apparatus 1. The gas-liquid supply unit 7 includes a processing liquid nozzle 71, a processing liquid supply unit 72, a gas supply unit 73, and a seal gas flow rate control unit 74. The processing liquid supply unit 72 is connected to the processing liquid nozzle 71. The gas supply unit 73 is connected to the processing liquid nozzle 71 and supplies gas to the processing liquid nozzle 71. The gas supply unit 73 is also connected to the first flow path 581 of the gas supply path 58 provided in the facing member holding section 61, and supplies gas to the labyrinth 57 through the gas supply path 58.

  The seal gas flow rate control unit 74 is provided between the gas supply unit 73 and the labyrinth 57, and the flow rate of the gas supplied to the labyrinth 57 based on the relative relationship between the pressure of the labyrinth 57 and the pressure of the external space described above. To control. The seal gas flow rate control unit 74 adjusts the opening degree of a valve provided on the gas supply path 58 that connects the gas supply unit 73 and the labyrinth 57, for example, to thereby flow the seal gas supplied to the labyrinth 57. To control. The relative relationship between the pressure of the labyrinth 57 and the pressure of the external space described above is acquired based on the outputs of the first pressure measurement unit 751 and the second pressure measurement unit 752. As the relative relationship, for example, the difference between the pressure of the labyrinth 57 output from the first pressure measurement unit 751 and the pressure of the external space output from the second pressure measurement unit 752 is acquired.

In the substrate processing apparatus 1, various types of liquids are used as the processing liquid. The treatment liquid may be, for example, a chemical liquid used for chemical treatment of the substrate 9 (polymer removal liquid, etching liquid such as hydrofluoric acid or tetramethylammonium hydroxide aqueous solution). The processing liquid may be a cleaning liquid such as pure water (DIW: deionized water) or carbonated water used for the cleaning process of the substrate 9, for example. The processing liquid may be, for example, isopropyl alcohol (IPA) supplied to replace the liquid on the substrate 9. The gas supplied from the gas supply unit 73 is, for example, an inert gas such as nitrogen (N ₂ ) gas. Various gases other than the inert gas may be supplied from the gas supply unit 73.

  FIG. 6 is an enlarged cross-sectional view showing a part of the processing liquid nozzle 71. The treatment liquid nozzle 71 is made of, for example, PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer). Inside the processing liquid nozzle 71, a processing liquid channel 716 and two gas channels 717 are provided. The processing liquid channel 716 is connected to the processing liquid supply unit 72 shown in FIG. The two gas flow paths 717 are connected to the gas supply unit 73 shown in FIG.

  The processing liquid supplied from the processing liquid supply unit 72 to the processing liquid channel 716 shown in FIG. 6 is discharged downward from the discharge port 716 a provided on the lower end surface of the processing liquid nozzle 71. When a plurality of types of processing liquids are discharged from the processing liquid nozzle 71, the processing liquid nozzle 71 is provided with a plurality of processing liquid flow paths 716 corresponding to the plurality of types of processing liquids, respectively. It may be discharged from a plurality of discharge ports 716a.

  The inert gas supplied from the gas supply unit 73 to the central gas flow channel 717 (the right gas flow channel 717 in the drawing) is directed downward from the lower surface injection port 717 a provided on the lower end surface of the processing liquid nozzle 71. (For example, injection). The inert gas supplied from the gas supply unit 73 to the gas channel 717 on the outer peripheral portion is supplied to the periphery from a plurality of side surface injection ports 717 b provided on the side surface of the processing liquid nozzle 71.

  The plurality of side surface injection ports 717b are arranged at substantially equal angular intervals in the circumferential direction. The plurality of side surface injection ports 717b are connected to a circumferential flow channel extending in the circumferential direction from the lower end portion of the gas flow channel 717 at the outer circumferential portion. The inert gas supplied from the gas supply unit 73 is supplied (for example, injected) obliquely downward from the plurality of side surface injection ports 717b. Note that only one side injection port 717b may be provided.

  The processing liquid supplied from the processing liquid supply unit 72 (see FIG. 5) is discharged from the discharge port 716a of the processing liquid nozzle 71 toward the upper surface 91 of the substrate 9 through the counter member opening 54 shown in FIG. . In other words, the processing liquid nozzle 71 supplies the processing liquid supplied from the processing liquid supply unit 72 to the upper surface 91 of the substrate 9 through the counter member opening 54. In the substrate processing apparatus 1, the processing liquid nozzle 71 may protrude downward from the facing member opening 54 of the facing member main body 51. In other words, the front end of the processing liquid nozzle 71 may be positioned below the lower end edge of the facing member opening 54. The processing liquid supplied from the processing liquid supply unit 72 flows downward through the counter member opening 54 in the processing liquid nozzle 71, and the upper surface 91 of the substrate 9 from the discharge port 716 a (see FIG. 6) of the processing liquid nozzle 71. It is discharged toward. When the processing liquid is supplied through the counter member opening 54, the processing liquid discharged from the processing liquid nozzle 71 above the counter member opening 54 passes through the counter member opening 54 as well as the counter member. A state in which the processing liquid is discharged through the processing liquid nozzle 71 inserted into the opening 54 is also included.

  A part of the inert gas supplied from the gas supply unit 73 (see FIG. 5) to the processing liquid nozzle 71 is topped from the lower surface injection port 717a (see FIG. 6) of the processing liquid nozzle 71 through the counter member opening 54. It is supplied to the processing space 90 between the plate 5 and the substrate 9. A part of the inert gas supplied from the gas supply unit 73 to the processing liquid nozzle 71 is supplied to the nozzle gap 56 from a plurality of side surface injection ports 717 b (see FIG. 6) of the processing liquid nozzle 71. In the nozzle gap 56, the inert gas from the gas supply unit 73 is supplied obliquely downward from the side surface of the processing liquid nozzle 71, flows downward, and is supplied to the processing space 90.

  In the substrate processing apparatus 1, the processing of the substrate 9 is preferably performed in a state where an inert gas is supplied to the processing space 90 from the processing liquid nozzle 71 and the processing space 90 is in an inert gas atmosphere. In other words, the gas supplied from the gas supply unit 73 to the processing space 90 is a processing atmosphere gas. The processing atmosphere gas includes a gas supplied from the processing liquid nozzle 71 to the nozzle gap 56 and supplied to the processing space 90 through the nozzle gap 56.

  The inert gas supplied from the gas supply unit 73 to the first flow path 581 of the gas supply path 58 shown in FIGS. 3 and 4 spreads in the circumferential direction by the first manifold 582, and passes through the plurality of second flow paths 583. To the second manifold 584. The inert gas also spreads in the circumferential direction in the second manifold 584 and is injected from the plurality of gas injection ports 585 toward the lower labyrinth 57 between the radial inner end and the radial outer end of the labyrinth 57. Is done. By supplying an inert gas from the plurality of gas injection ports 585 to the labyrinth 57, the nozzle gap 56, which is a space radially inward of the labyrinth 57, and the processing space 90 continuous to the nozzle gap 56 are formed in the labyrinth 57. It is sealed from the space outside in the radial direction. That is, the gas supplied from the gas supply unit 73 to the labyrinth 57 is a seal gas. The inert gas supplied to the labyrinth 57 from the plurality of gas injection ports 585 spreads radially outward and radially inward in the labyrinth 57.

  In the example shown in FIG. 5, the gas supply unit 73 is a seal gas supply unit that is a supply source of the seal gas, and is also a process atmosphere gas supply unit that is a supply source of the process atmosphere gas. The processing atmosphere gas and the seal gas are the same type of gas. The processing atmosphere gas and the seal gas may be different types of gases. In the gas supply path 58, the first manifold 582 and the second manifold 584 each have an annular shape for temporarily storing the seal gas between the gas supply unit 73, which is a seal gas supply unit, and the plurality of gas injection ports 585. It is a manifold.

  Next, an example of the processing flow of the substrate 9 in the substrate processing apparatus 1 will be described with reference to FIG. First, in a state where the top plate 5 is located at the first position shown in FIG. 1, the substrate 9 is carried into the housing 11 and held by the substrate holding part 31 (step S11). At this time, the top plate 5 is held by the facing member holding portion 61 of the facing member moving mechanism 6.

  Subsequently, the counter member holding portion 61 is moved downward by the counter member lifting mechanism 62. Thereby, the top plate 5 moves downward from the first position to the second position, and the top plate 5 is held by the substrate holding portion 31 as shown in FIG. 2 (step S12). As shown in FIGS. 2 and 3, a labyrinth 57 is formed between the top plate 5 and the opposing member holding portion 61. Then, supply of an inert gas (that is, a processing atmosphere gas) is started from the gas supply unit 73 to the nozzle gap 56 and the processing space 90 through the processing liquid nozzle 71. Further, the supply of the inert gas (that is, the seal gas) to the labyrinth 57 is started from the gas supply unit 73 through the gas supply path 58 (see FIG. 3).

  Next, rotation of the substrate holding part 31, the substrate 9, and the top plate 5 is started by the substrate rotation mechanism 33 shown in FIG. 2 (step S13). The supply of the inert gas from the treatment liquid nozzle 71 and the supply of the inert gas to the labyrinth 57 are continued after step S13. Then, the first processing liquid is supplied from the processing liquid supply unit 72 to the processing liquid nozzle 71, and the upper surface 91 of the rotating substrate 9 is rotated through the opposing member opening 54 of the top plate 5 located at the second position. It is supplied to the central part (step S14).

  The first processing liquid supplied from the processing liquid nozzle 71 to the central portion of the substrate 9 spreads radially outward from the central portion of the substrate 9 by the rotation of the substrate 9 and is applied to the entire upper surface 91 of the substrate 9. . The first processing liquid scatters radially outward from the outer edge of the substrate 9 and is received by the first guard 41 of the cup portion 4. The vertical position of the first guard 41 shown in FIG. 2 is a position for receiving the processing liquid from the substrate 9 and is referred to as a “liquid receiving position” in the following description. When the first processing liquid is applied to the substrate 9 for a predetermined time, the processing of the substrate 9 with the first processing liquid is completed.

  The first processing liquid is, for example, a chemical liquid such as a polymer removal liquid or an etching liquid, and the chemical liquid processing is performed on the substrate 9 in step S14. The supply of the first processing liquid (step S14) may be performed before the start of rotation of the substrate 9 (step S13). In this case, the first processing liquid is padded (filled) on the entire upper surface 91 of the substrate 9 in a stationary state, and the paddle processing with the first processing liquid is performed.

  When the processing of the substrate 9 with the first processing liquid is completed, the supply of the first processing liquid from the processing liquid nozzle 71 is stopped. And the 1st guard 41 is moved below by the guard moving mechanism 43, and as shown in FIG. 8, it is located in the retracted position below the above-mentioned liquid receiving position. As a result, the guard that receives the processing liquid from the substrate 9 is switched from the first guard 41 to the second guard 42. That is, the guard moving mechanism 43 moves the first guard 41 in the vertical direction between the liquid receiving position and the retracted position, so that the guard that receives the processing liquid from the substrate 9 is the first guard 41 and the second guard 42. It is a guard switching mechanism which switches between.

  Subsequently, the second processing liquid is supplied from the processing liquid supply unit 72 to the processing liquid nozzle 71, and the upper surface 91 of the rotating substrate 9 is passed through the opposing member opening 54 of the top plate 5 located at the second position. (Step S15). The second processing liquid supplied from the processing liquid nozzle 71 to the central portion of the substrate 9 spreads radially outward from the central portion of the substrate 9 by the rotation of the substrate 9 and is applied to the entire upper surface 91 of the substrate 9. . The second processing liquid scatters radially outward from the outer edge of the substrate 9 and is received by the second guard 42 of the cup portion 4. By applying the second processing liquid to the substrate 9 for a predetermined time, the processing of the substrate 9 by the second processing liquid is completed. The second processing liquid is, for example, a cleaning liquid such as pure water or carbonated water, and the cleaning process is performed on the substrate 9 in step S15.

  When the processing of the substrate 9 with the second processing liquid is completed, the supply of the second processing liquid from the processing liquid nozzle 71 is stopped. Then, the flow rate of the inert gas injected from the side surface of the processing liquid nozzle 71 toward the nozzle gap 56 by the gas supply unit 73 is increased. Further, the flow rate of the inert gas injected from the lower end surface of the processing liquid nozzle 71 toward the processing space 90 also increases. Further, the rotation speed of the substrate 9 by the substrate rotation mechanism 33 increases. As a result, the second processing liquid or the like remaining on the upper surface 91 of the substrate 9 moves radially outward and scatters radially outward from the outer edge of the substrate 9, and the second guard 42 of the cup portion 4. Received by. By continuing the rotation of the substrate 9 for a predetermined time, a drying process for removing the processing liquid from the upper surface 91 of the substrate 9 is performed (step S16).

  When the drying process of the substrate 9 is completed, the rotation of the substrate holding unit 31, the substrate 9 and the top plate 5 by the substrate rotating mechanism 33 is stopped (step S17). Further, the supply of the inert gas from the gas supply unit 73 to the nozzle gap 56, the processing space 90, and the labyrinth 57 is stopped. Next, when the opposing member holding portion 61 is moved upward by the opposing member lifting mechanism 62, the top plate 5 is moved upward from the second position to the first position shown in FIG. 1 (step S18). . The top plate 5 is spaced apart upward from the substrate holding part 31 and is held by the counter member holding part 61. Thereafter, the substrate 9 is unloaded from the housing 11 (step S19). In the substrate processing apparatus 1, the above-described steps S <b> 11 to S <b> 19 are sequentially performed on the plurality of substrates 9 to sequentially process the plurality of substrates 9.

  As described above, in the substrate processing apparatus 1, the top plate 5 is held by the counter member holding unit 61 at the first position and is spaced upward from the substrate holding unit 31. The top plate 5 is also held by the substrate holder 31 at a second position below the first position, and is rotated together with the substrate 9 and the substrate holder 31 by the substrate rotation mechanism 33. The gas supply unit 73 supplies a processing atmosphere gas to the processing space 90 between the top plate 5 and the substrate 9. Thereby, the processing space 90 can be set as a desired gas atmosphere, and the substrate 9 can be processed in the gas atmosphere. For example, when supplying an inert gas to the processing space 90, the substrate 9 can be processed in an inert gas atmosphere (that is, a low oxygen atmosphere).

  In the substrate processing apparatus 1, as described above, the substrate 9 and the top plate 5 rotate around the central axis J <b> 1, so that the region above the central portion of the substrate 9 in the processing space 90 (hereinafter referred to as “central region”). .) Pressure is lower than the ambient pressure. As a result, the gas in the nozzle gap 56 continuing to the processing space 90 above the central region is sucked into the processing space 90.

  The nozzle gap 56 is continuous with an external space other than the processing space 90 and the nozzle gap 56 (that is, the above-described external space) at the upper end thereof. For this reason, if the above-described labyrinth 57 is not provided, the negative pressure generated in the central region of the processing space causes the atmosphere in the external space to enter from the upper end of the nozzle gap and enter the processing space via the nozzle gap. May also invade.

  On the other hand, in the substrate processing apparatus 1, as shown in FIG. 2, a labyrinth 57 is provided around the processing liquid nozzle 71 above the nozzle gap 56. Then, by supplying the seal gas to the labyrinth 57, the nozzle gap 56 is sealed from the external space (specifically, the space outside the radial direction of the labyrinth 57). As a result, it is possible to suppress the atmosphere in the external space from entering the processing space 90 through the nozzle gap 56.

  In the substrate processing apparatus 1, the first uneven portion 55 is provided on the upper surface of the opposing member flange portion 522 of the top plate 5, and the second uneven portion 615 is provided on the lower surface of the holding portion main body 611 of the opposing member moving mechanism 6. . Only in the state where the top plate 5 is located at the second position (that is, the state where the processing space 90 in which the processing of the substrate 9 is performed is formed), one of the first uneven portion 55 and the second uneven portion 615. The labyrinth 57 is formed by disposing the other convex portion in the concave portion via the gap. Thereby, compared with the substrate processing apparatus of the structure where a labyrinth is always provided regardless of the position of the top plate in the vertical direction, the substrate processing apparatus 1 can be flattened (that is, downsized in the vertical direction).

  In the substrate processing apparatus 1, a gas for processing atmosphere is jetted obliquely downward from the side surface of the processing liquid nozzle 71 to the nozzle gap 56 by the gas supply unit 73. For this reason, the gas for process atmosphere flows downward in the nozzle gap 56, and the pressure in the nozzle gap 56 is lower than the pressure in the external space (that is, a negative pressure is generated). Therefore, if the above-described labyrinth 57 is not provided, the atmosphere in the external space may enter from the upper end of the nozzle gap and may enter the processing space via the nozzle gap. As described above, in the substrate processing apparatus 1, the labyrinth 57 to which the sealing gas is supplied is provided around the processing liquid nozzle 71 above the nozzle gap 56, and the nozzle gap 56 is sealed from the external space by the labyrinth 57. . As a result, even when the processing atmosphere gas is jetted obliquely downward from the side surface of the processing liquid nozzle 71, the atmosphere in the external space is prevented from entering the processing space 90 through the nozzle gap 56. can do.

  In the 1st uneven part 55 which forms the labyrinth 57, the recessed part 551 innermost in the radial direction among a plurality of recessed parts is provided in the upper part of the opposing member cylinder part 521, and it is the up-down direction rather than the other recessed part of the 1st uneven part 55. The size of is large. Thereby, it can further suppress that the atmosphere of external space penetrate | invades into a radial inside rather than the radial inner end of the labyrinth 57. FIG. As a result, it is possible to further suppress the atmosphere in the external space from entering the processing space 90 through the nozzle gap 56.

  In the opposed member moving mechanism 6, the holding portion main body 611 of the opposed member holding portion 61 has a circumferential injection port that injects a seal gas toward the labyrinth 57 between the radial inner end and the radial outer end of the labyrinth 57. (In the example shown in FIG. 4, a plurality of gas injection ports 585) are provided. For this reason, the seal gas supplied from the gas supply unit 73 to the labyrinth 57 spreads radially outward and radially inward in the labyrinth 57. Thus, by forming the flow of the seal gas that goes radially outward in the labyrinth 57, it is possible to suppress the atmosphere of the external space from entering the labyrinth 57. Further, by forming a flow of the sealing gas inward in the radial direction in the labyrinth 57, the negative pressure generated by the rotation of the substrate 9 and the injection of the processing atmosphere gas from the processing liquid nozzle 71 to the nozzle gap 56 is reduced. be able to. As a result, it is possible to further suppress the atmosphere of the external space from entering the labyrinth 57.

  In the substrate processing apparatus 1, an annular first manifold 582 for temporarily storing the seal gas is provided between the circumferential injection port and the gas supply unit 73 that is a supply source of the seal gas. Thereby, the uniformity in the circumferential direction of the flow rate of the seal gas injected from the circumferential injection port can be improved. Also, by providing a second manifold 584 similar to the first manifold 582, the uniformity in the circumferential direction of the flow rate of the seal gas injected from the circumferential injection port can be further improved.

  As described above, in the processing of the substrate 9 illustrated in FIG. 7, between the cleaning processing for the substrate 9 in step S15 and the drying processing in step S16 (that is, the processing type for the substrate 9 is changed from cleaning processing to drying processing). When changing, the flow rate of the processing atmosphere gas injected from the side surface of the processing liquid nozzle 71 toward the nozzle gap 56 increases. As a result, the pressure in the nozzle gap 56 further decreases (that is, the negative pressure in the nozzle gap 56 increases). In addition, the rotation speed of the substrate 9 and the top plate 5 by the substrate rotation mechanism 33 increases between step S15 and step S16. Thereby, the pressure in the central region of the processing space 90 further decreases (that is, the negative pressure generated in the central region of the processing space 90 increases).

  As described above, between Step S15 and Step S16, the pressure fluctuation of the nozzle gap 56 occurs due to the increase in the flow rate of the processing atmosphere gas and the rotation speed of the substrate 9, and the pressure fluctuation causes the pressure of the labyrinth 57 to increase. The relative relationship with the pressure in the external space described above varies. Specifically, the pressure difference between the external space and the nozzle gap 56 increases, and the atmosphere in the external space easily enters the nozzle gap 56 through the labyrinth 57.

  Therefore, in the substrate processing apparatus 1, for example, when the pressure of the labyrinth 57 is lower than the pressure in the external space by a predetermined pressure difference or more, the flow rate of the seal gas supplied to the labyrinth 57 by the seal gas flow rate control unit 74 is increased. And the strength of the seal in the labyrinth 57 is improved. As described above, the seal gas flow rate control unit 74 controls the flow rate of the seal gas supplied to the labyrinth 57 based on the relative relationship between the pressure of the labyrinth 57 and the pressure of the external space. Intrusion into the labyrinth 57 is preferably suppressed. As a result, the invasion of the atmosphere from the external space to the processing space 90 can be suitably suppressed.

  In the substrate processing apparatus 1, as described above, the relative relationship between the pressure of the labyrinth 57 and the pressure of the external space is acquired based on the outputs of the first pressure measurement unit 751 and the second pressure measurement unit 752. Thereby, since the relative relationship can be acquired with high accuracy, the flow rate control of the seal gas based on the relative relationship by the seal gas flow rate control unit 74 can be performed with high accuracy. As a result, the intrusion of the atmosphere from the external space to the processing space 90 can be further suitably suppressed.

  In the substrate processing apparatus 1, the relative relationship between the pressure of the labyrinth 57 and the pressure of the external space is not necessarily acquired based on the outputs of the first pressure measurement unit 751 and the second pressure measurement unit 752. For example, the relative relationship may be acquired based on the flow rate of the processing atmosphere gas injected toward the nozzle gap 56. Specifically, when the flow rate of the processing atmosphere gas injected toward the nozzle gap 56 is equal to or higher than a predetermined flow rate, it is determined that the pressure of the labyrinth 57 is lower than the pressure in the external space by a predetermined pressure difference or more. May be. In this case, when the flow rate of the processing atmosphere gas injected toward the nozzle gap 56 fluctuates, the seal gas flow rate control unit 74 is based on the pressure fluctuation of the nozzle gap 56 caused by the flow rate fluctuation of the processing atmosphere gas. Thus, the flow rate of the seal gas supplied to the labyrinth 57 is controlled. Thereby, the penetration | invasion of the atmosphere from the external space to the process space 90 can be suppressed suitably.

  Further, for example, the relative relationship may be acquired based on the rotation speed of the substrate 9. Specifically, when the rotation speed of the substrate 9 is equal to or higher than a predetermined rotation speed, it may be determined that the pressure of the labyrinth 57 is lower than the pressure difference in the external space by a predetermined pressure difference or more. In this case, when the rotation speed of the substrate 9 is changed by the substrate rotation mechanism 33, the seal gas flow rate controller 74 is supplied to the labyrinth 57 based on the pressure fluctuation of the nozzle gap 56 caused by the fluctuation of the rotation speed. Control the flow rate of sealing gas. Thereby, the penetration | invasion of the atmosphere from the external space to the process space 90 can be suppressed suitably.

  Further, for example, the relative relationship may be acquired based on the type of processing for the substrate 9. Specifically, when the drying process is performed on the substrate 9, it may be determined that the pressure of the labyrinth 57 is lower than the pressure of the external space by a predetermined pressure difference or more. In this case, the flow rate of the seal gas supplied to the labyrinth 57 based on the pressure fluctuation of the nozzle gap 56 caused by the change in the process type when the process type for the substrate 9 is changed. To control. Thereby, the penetration | invasion of the atmosphere from the external space to the process space 90 can be suppressed suitably.

  In other words, in the substrate processing apparatus 1, fluctuations in the flow rate of the processing atmosphere gas injected toward the nozzle gap 56, fluctuations in the rotation speed of the substrate 9 by the substrate rotation mechanism 33, and changes in the type of processing for the substrate 9. Of these, the seal gas flow control by the seal gas flow control unit 74 may be performed based on any one or two or more fluctuations (or changes). In this case, the first pressure measurement unit 751 and the second pressure measurement unit 752 may be omitted, and the flow rate control of the seal gas based on the outputs from the first pressure measurement unit 751 and the second pressure measurement unit 752 is used together. Also good.

  Next, another preferred example of the labyrinth will be described. FIGS. 9 and 10 are cross-sectional views showing a part of the top plate 5 and the opposed member moving mechanism 6 in an enlarged manner, similarly to FIG. In the labyrinth 57a shown in FIG. 9, a surface 553 that faces a plurality of gas injection ports 585 (that is, circumferential injection ports) is an inclined surface that goes downward as it goes radially outward. More specifically, among the first concavo-convex portions 55 of the top plate 5, the radially outer side surface 553 of one annular convex portion 552 positioned below the plurality of gas injection ports 585 is directed radially outward. It is an inclined surface heading downward.

  Thereby, the seal gas injected into the labyrinth 57a from the plurality of gas injection ports 585 can be easily guided radially outward along the side surface 553 that is an inclined surface. As a result, it is possible to further suppress the atmosphere of the external space from entering the labyrinth 57a. Further, since the seal gas injected from each gas injection port 585 to the side surface 553 spreads in the circumferential direction, the seal gas can be supplied evenly to the region between the plurality of gas injection ports 585 in the labyrinth 57a. . As a result, the labyrinth 57a can improve the uniformity of the pressure of the seal gas in the circumferential direction. Furthermore, the uniformity in the circumferential direction of the flow rate of the seal gas in the labyrinth 57a can be further improved.

  In the example shown in FIG. 10, the holding part main body 611 of the facing member holding part 61 has a plurality of sucking gases in the labyrinth 57 b at the radially outer end of the labyrinth 57 b (that is, the end part on the external space side). A gas suction port 591 is provided. The plurality of gas suction ports 591 are arranged in the circumferential direction at substantially equal angular intervals on the upper surface of one concave portion (that is, the bottom surface of the concave portion) at the radially outer end portion of the second uneven portion 615. The plurality of gas suction ports 591 are connected to a suction unit (not shown) via a suction path 592 formed inside the facing member holding unit 61. The plurality of gas suction ports 591 are circumferential suction ports arranged circumferentially around the central axis J1 at the radially outer end of the labyrinth 57b. By driving the suction part, the gas in the labyrinth 57b is sucked through the circumferential suction port.

  Thereby, in the labyrinth 57b, it can suppress that the atmosphere of external space penetrate | invades radially inward rather than the some gas suction port 591. FIG. Further, the seal gas supplied from the plurality of gas injection ports 585 into the labyrinth 57b can be more easily guided radially outward. As a result, it is possible to further suppress the atmosphere of the external space from entering the labyrinth 57b. In the labyrinth 57b, for example, one substantially annular suction port centering on the central axis J1 may be provided as a circumferential suction port instead of the plurality of gas suction ports 591. The circumferential suction port provided in the labyrinth 57b may also be provided in the labyrinth 57a shown in FIG.

  Various changes can be made to the substrate processing apparatus 1 described above.

  For example, when the flow rate of the seal gas injected from the plurality of gas injection ports 585 is approximately uniform in the circumferential direction, one or both of the first manifold 582 and the second manifold 584 may be omitted.

  The supply of the seal gas to the labyrinth 57 shown in FIG. 3 is not necessarily performed from the plurality of gas suction ports 591 (that is, the circumferential injection ports) provided in the holding portion main body 611 of the facing member holding portion 61. . For example, the seal gas may be supplied to the labyrinth 57 from a non-circular injection port provided in the holding unit main body 611. Alternatively, from the injection port provided radially inward of the labyrinth 57 (for example, the injection port arranged at the same position in the vertical direction as the labyrinth 57 on the side surface of the processing liquid nozzle 71), the radial inner end of the labyrinth 57 is provided. Seal gas may be injected toward the head. The same applies to the labyrinths 57a and 57b shown in FIGS.

  The suction of the gas at the radially outer end of the labyrinth 57b shown in FIG. 10 is not necessarily performed from the circumferential suction port provided in the holding part main body 611 of the facing member holding part 61. For example, surrounding gas may be sucked from a non-circular suction port provided in the holding portion main body 611 at the radially outer end of the labyrinth 57b.

  In the substrate processing apparatus 1 shown in FIG. 1, the processing atmosphere gas may not be ejected from the side surface of the processing liquid nozzle 71.

  The labyrinth 57 is not necessarily formed by the first uneven portion 55 of the facing member flange portion 522 and the second uneven portion 615 of the facing member holding portion 61. The shape and arrangement of the labyrinth 57 may be variously changed. Further, the labyrinth 57 is not necessarily formed only when the top plate 5 is located at the second position, and may be provided regardless of the position of the top plate 5. The top plate 5 is not necessarily held by the substrate holder 31 and needs to be rotated together with the substrate 9 by the substrate rotation mechanism 33, and may be rotated by another rotation mechanism independent of the substrate rotation mechanism 33. Moreover, the top plate 5 does not need to rotate.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 5 Top plate 6 Opposing member moving mechanism 9 Substrate 51 Opposing member main body 54 Opposing member opening 55 First uneven part 56 Nozzle gap 57, 57a, 57b Labyrinth 71 Processing liquid nozzle 73 Gas supply part 74 Seal gas flow control part 90 processing space 91 (substrate) upper surface 521 opposing member cylinder part 522 opposing member flange part 591 gas suction port 611 holding part main body 613 flange support part 615 second uneven part 751 first pressure measuring part 752 second pressure measuring part J1 center Axis S11 ~ S19 Step

Claims (8)

A substrate processing apparatus for processing a substrate,
A substrate holder for holding the substrate in a horizontal state;
A substrate rotation mechanism that rotates the substrate together with the substrate holding portion about a central axis that faces the vertical direction;
A counter member having a counter member main body opposed to the upper surface of the substrate and provided with a counter member opening at a central portion, and a cylindrical counter member cylindrical portion protruding upward from the periphery of the counter member opening of the counter member main body. When,
A processing liquid nozzle that is inserted into the counter member cylinder and supplies a processing liquid to the upper surface of the substrate through the counter member opening;
A gas supply unit for supplying a gas for processing atmosphere to a space between the facing member and the substrate;
A labyrinth that is continuous with a nozzle gap that is a space between the processing liquid nozzle and the opposing member cylinder portion and seals the nozzle gap from an external space by supplying a seal gas;
A seal gas flow rate controller that controls the flow rate of the seal gas supplied to the labyrinth based on the relative relationship between the pressure of the labyrinth and the pressure of the external space;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the relative relationship varies due to a pressure variation in the nozzle gap. The substrate processing apparatus according to claim 2,
The gas for the processing atmosphere is jetted obliquely downward from the side surface of the processing liquid nozzle to the nozzle gap by the gas supply unit,
When the flow rate of the processing atmosphere gas injected toward the nozzle gap varies, the seal gas flow rate control unit is configured based on the pressure variation of the nozzle gap caused by the flow rate variation of the processing atmosphere gas. A substrate processing apparatus for controlling a flow rate of the sealing gas. The substrate processing apparatus according to claim 2 or 3,
When the rotation speed of the substrate is changed by the substrate rotation mechanism, the seal gas flow rate control unit controls the flow rate of the seal gas based on the pressure fluctuation of the nozzle gap caused by the fluctuation of the rotation speed. A substrate processing apparatus. The substrate processing apparatus according to claim 2, wherein:
The seal gas flow rate control unit controls the flow rate of the seal gas based on the pressure fluctuation of the nozzle gap caused by the change in the process type when the process type for the substrate is changed. Substrate processing equipment. A substrate processing apparatus according to any one of claims 1 to 5,
A first pressure measuring unit for measuring the pressure of the labyrinth;
A second pressure measuring unit for measuring the pressure in the external space;
Further comprising
The substrate processing apparatus, wherein the relative relationship is acquired based on outputs of the first pressure measurement unit and the second pressure measurement unit. A substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus, wherein gas in the labyrinth is sucked at an end of the labyrinth on the external space side. A substrate processing apparatus according to any one of claims 1 to 7,
A counter member that holds the counter member and moves the counter member relative to the substrate holding portion between a first position in the vertical direction and a second position below the first position. A moving mechanism;
The opposing member is
A counter member flange portion that extends annularly outward in the radial direction from the upper end portion of the counter member cylindrical portion and is held by the counter member moving mechanism;
First concave and convex portions in which concave portions and convex portions are alternately arranged concentrically on the upper surface of the opposing member flange portion; and
Further comprising
The opposing member moving mechanism is
A lower surface of the opposing member flange portion and a lower portion of the holding portion facing the vertical direction;
An upper portion of the opposed member flange portion and an upper portion of the holding portion opposed to the vertical direction;
Second concave and convex portions in which concave portions and convex portions are alternately arranged concentrically on the lower surface of the upper portion of the holding portion;
With
In the state where the opposing member is located at the first position, the opposing member flange portion is supported from below by the lower portion of the holding portion, whereby the opposing member is held by the opposing member moving mechanism and the substrate. Apart from the holding part,
In a state where the facing member is located at the second position, the facing member is separated from the facing member moving mechanism, is held by the substrate holding portion, and can be rotated together with the substrate holding portion by the substrate rotating mechanism. The substrate processing apparatus, wherein the labyrinth is formed by disposing the other convex portion through a gap in one concave portion of the first concave and convex portions and the second concave and convex portion.

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