JP2016539324A - 異種放射線測定センサー及びその製造方法 - Google Patents
異種放射線測定センサー及びその製造方法 Download PDFInfo
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- 230000005855 radiation Effects 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
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- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000126 substance Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 55
- 238000001514 detection method Methods 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 239000012528 membrane Substances 0.000 abstract description 3
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- 239000010949 copper Substances 0.000 description 10
- 239000010931 gold Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 4
- 230000004992 fission Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- YFDLHELOZYVNJE-UHFFFAOYSA-L mercury diiodide Chemical compound I[Hg]I YFDLHELOZYVNJE-UHFFFAOYSA-L 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 2
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- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229960003671 mercuric iodide Drugs 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
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- 230000009257 reactivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910014323 Lanthanum(III) bromide Inorganic materials 0.000 description 1
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- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/243—Modular detectors, e.g. arrays formed from self contained units
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/1603—Measuring radiation intensity with a combination of at least two different types of detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2008—Measuring radiation intensity with scintillation detectors using a combination of different types of scintillation detectors, e.g. phoswich
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
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- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
10:半導体基板
110:第1上部電極
112:閃光体
120:第2上部電極
130:第3上部電極
132:中性子反応物質
134:金属電極
140:第4上部電極
142:金属薄膜
210:第1下部電極
220:第2下部電極
230:第3下部電極
240:第4下部電極
410:第1ガード電極
420:第2ガード電極
Claims (10)
- 半導体基板と、
前記半導体基板の下面に形成された少なくとも一つの下部電極と、
前記半導体基板の上面に前記下部電極と電気的に接続される複数の上部電極、および
前記複数の上部電極上に、それぞれ異なる物質と反応する検出膜とを含む異種放射線測定センサー。 - 前記検出膜が、
X線およびガンマ線のうちの少なくともいずれか一つを検出する第1検出膜と、
アルファ線およびベータ線のうち少なくともいずれか一つを検出する第2検出膜、および
中性子を検出する第3検出膜とを含むことを特徴とする請求項1に記載の異種放射線測定センサー。 - 前記第1検出膜が、
上部電極の上面に閃光体を形成し、前記形成された閃光体に反射膜を形成することを特徴とする請求項2に記載の異種放射線測定センサー。 - 前記第3検出膜が、
上部電極の上面に中性子反応物質を形成し、前記形成された中性子反応物質に金属電極を形成してカプセル化することを特徴とする請求項2に記載の異種放射線測定センサー。 - 前記半導体基板で検出することができる放射線を遮蔽(shielding)して、金属薄膜で形成されている基準膜さらに含む請求項1に記載の異種放射線測定センサー。
- 前記基準膜が、Pb+、Cu+、Pb、Cuのいずれか一つの金属薄膜で形成されることを特徴とする請求項5に記載の異種放射線測定センサー。
- 前記下部電極が、
前記異種の放射線を測定するために、プリアンプ(preamplifier)、アンプ(amplifier)、オンデマンド半導体(Application Specific Integrated Circuit、ASIC)、アナログデジタル変換器(Analog-Digital Converter、ADC)、マイクロチャネル構造(Micro Channel Architecture)とカウンター(counter)のうちの少なくとも1つの電子素子を含む電子回路と電気的に接続されていることを特徴とする請求項1に記載の異種放射線測定センサー。 - 前記下部電極と前記上部電極が、
半導体の種類に応じて、ピン型(PIN type)およびショートキー型(Schottky type)のいずれかで電極を形成することを特徴とする請求項1に記載の異種放射線測定センサー。 - 前記半導体基板の上面および下面が、
各電極間のリーク電流を遮断するガード電極(Guard electrode)をさらに形成することを特徴とする請求項1に記載の異種放射線測定センサー。 - 前記半導体基板の上面に前記上部電極が、n×n個形成され、n×n個の前記上部電極上にそれぞれ異なる物質と反応する前記検出膜が形成されることを特徴とする請求項1から9までのいずれか一項に記載の異種放射線測定センサー。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0160009 | 2013-12-20 | ||
KR1020130160009A KR20150073239A (ko) | 2013-12-20 | 2013-12-20 | 이종 방사선 측정 센서 및 그 제조 방법 |
PCT/KR2014/003394 WO2015093690A1 (en) | 2013-12-20 | 2014-04-18 | Different radiation measuring sensor and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
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JP2016539324A true JP2016539324A (ja) | 2016-12-15 |
JP6353900B2 JP6353900B2 (ja) | 2018-07-04 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016527262A Active JP6353900B2 (ja) | 2013-12-20 | 2014-04-18 | 異種放射線測定センサー |
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Country | Link |
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US (1) | US10620325B2 (ja) |
JP (1) | JP6353900B2 (ja) |
KR (1) | KR20150073239A (ja) |
WO (1) | WO2015093690A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20200021495A (ko) * | 2020-02-20 | 2020-02-28 | 한국원자력연구원 | 중성자선과 엑스선을 이용하는 비파괴 검사 시스템 |
Families Citing this family (1)
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KR20190030640A (ko) * | 2016-03-18 | 2019-03-22 | 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 | 복수의 방사선을 동시에 검출하기 위한 방사선 검출기 |
Citations (7)
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JPS6312179A (ja) * | 1986-07-02 | 1988-01-19 | Hitachi Ltd | 放射線検出器 |
JPH02260466A (ja) * | 1989-03-30 | 1990-10-23 | Matsushita Electric Ind Co Ltd | 半導体放射線検出器 |
JPH1144769A (ja) * | 1997-07-25 | 1999-02-16 | Aloka Co Ltd | 半導体放射線検出器 |
JP2010181412A (ja) * | 2010-03-15 | 2010-08-19 | Toshiba Corp | 放射線弁別測定方法および放射線弁別測定装置 |
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-
2013
- 2013-12-20 KR KR1020130160009A patent/KR20150073239A/ko active Search and Examination
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2014
- 2014-04-18 WO PCT/KR2014/003394 patent/WO2015093690A1/en active Application Filing
- 2014-04-18 JP JP2016527262A patent/JP6353900B2/ja active Active
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2016
- 2016-05-06 US US15/148,680 patent/US10620325B2/en active Active
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JPS6312179A (ja) * | 1986-07-02 | 1988-01-19 | Hitachi Ltd | 放射線検出器 |
JPH02260466A (ja) * | 1989-03-30 | 1990-10-23 | Matsushita Electric Ind Co Ltd | 半導体放射線検出器 |
JPH1144769A (ja) * | 1997-07-25 | 1999-02-16 | Aloka Co Ltd | 半導体放射線検出器 |
JP2010276519A (ja) * | 2009-05-29 | 2010-12-09 | Hitachi Ltd | 荷電粒子測定装置およびその測定方法 |
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US10620325B2 (en) | 2020-04-14 |
WO2015093690A1 (en) | 2015-06-25 |
US20160327656A1 (en) | 2016-11-10 |
KR20150073239A (ko) | 2015-07-01 |
JP6353900B2 (ja) | 2018-07-04 |
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