JP2016520258A - 感光性デバイスの製造方法 - Google Patents
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
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Abstract
Description
図7の10ステップに概略的に示されるように、本発明は、第1に、後方コンタクトを形成する層7を含む基板3を製造することを提案する。この第1段階S70に続いて、段階S71の前記基板3に絶縁層2を堆積する。この基板3上に、SU8樹脂等の絶縁材料の層2が備えられ、金属コンタクト5は、段階S72で堆積される。次いで、段階S73において金属コンタクト5においてサイトがエッチングされ、それは、後方コンタクト7を形成する層まで延長する。
第1に、後方コンタクト7を形成する層を含む基板3が製造される。この第1段階に続いて、前記基板3における絶縁層2の堆積が行われる。ポリマー、アルミナ又なシリカ等の絶縁材料の層2がこの基板3上に備えられ、次いで、後方コンタクト7を形成する層までずっと延長するリセスがエッチンされる。
2 第2の部分
3 基板
4 凸レンズ
5 金属コンタクト
6 スペーサ
7 導電層
8 親水性材料の層
14 凸レンズ、第2の光学システム
104 第1の光学システム
Claims (18)
- 不活性である第2の部分(2)によって囲われる、特定の波長の範囲内で活性である少なくとも感光性の第1の部分(1)を、基板(3)上に用意する第1の段階を含む、感光性デバイスの製造方法であって、
前記基板(3)に対向する前記第1の部分(1)の上部表面を覆う材料が、電気化学的プロセスによって前記活性である第1の部分の直上の親水性の層に選択的に配置され、前記第2の部分(2)が、前記基板に対向する上部表面に疎水性の材料を含み、
前記方法が、
前記特定の波長の範囲内で透過性である材料を含む溶液を前記第1の部分(1)及び第2の部分(2)の上部表面全体に溶射する段階と、
前記材料を含む凸レンズ(4、14)を前記第1の部分上に形成する段階と、
をさらに含む、感光性デバイスの製造方法。 - 前記第1の部分(1)の基板(3)に対向する上部表面に親水性を有する材料(8)を選択的に堆積する段階を含む、請求項1に記載の方法。
- 前記第1の部分(1)の基板(3)に対向する上部表面が、処理後に親水性の状態になる、請求項1又は2に記載の方法。
- 前記親水性の材料(8)がワイドバンドギャップ酸化物である、請求項1から3の何れか一項に記載の方法。
- 前記親水性の材料(8)が、ZnO、ドーピングされたZnO及びTiO2からなる群から選択される、請求項1から4の何れか一項に記載の方法。
- 前記溶液を溶射する段階の前に、前記上部表面を紫外線に晒すことによって前記活性である第1の部分(1)の上部表面を処理する段階を含む、請求項1から5の何れか一項に記載の方法。
- 前記溶液を溶射する段階の前に、電位を印加することによって前記活性である第1の部分を処理する段階を含む、請求項1から6の何れか一項に記載の方法。
- 前記溶液が硬化剤を含む、請求項1から7の何れか一項に記載の方法。
- 前記硬化剤がモノマーである、請求項8に記載の方法。
- 前記第1の部分上に凸レンズ(4、14)を形成するために前記溶液を硬化する段階を含む、請求項8又は9に記載の方法。
- 前記硬化する段階が、前記第1の部分(1)の上部表面を紫外線に晒す段階を含む、請求項8から10の何れか一項に記載の方法。
- 前記第1の段階及び前記溶射する段階の間に、前記第2の部分(2)の上部表面の一部に、前記第1の部分(1)に接触する親水性の金属層(5)を堆積する段階を含む、請求項1から11の何れか一項に記載の方法。
- 前記活性である第1の部分(1)が、感光性セルの光吸収体である、請求項1から12の何れか一項に記載の方法。
- 前記不活性である第2の部分(2)が、電気絶縁体である、請求項1から13の何れか一項に記載の方法。
- 前記特定の波長の範囲内で透過性である材料のコーティング(6)を前記レンズ(14)上に堆積する段階を含む、請求項1から14の何れか一項に記載の方法。
- 前記第1の段階が、特定の波長の範囲内で活性である第1の部分(1)のアレイを基板(3)上に用意する段階を含み、前記第1の部分(1)が、不活性である第2の部分(2)によって互いに分離される、請求項1から15の何れか一項に記載の方法。
- 前記第1の段階が、前記第2の部分(2)を含む基板(3)における第1の部分(1)の選択的な堆積である、請求項16に記載の方法。
- 少なくとも特定の波長の範囲内で活性である感光性の第1の部分(1)と、
前記第1の部分(1)を囲う不活性である第2の部分(2)と、
を基板上に備え、
前記第1の部分(1)が、前記基板に対向する上部表面における電気化学的プロセスによって前記活性である第1の部分の直上の親水性の層(8)に選択的に配置される材料を含み、前記第2の部分(2)の基板に対向する上部表面が、疎水性の材料を含み、
前記親水性の材料(8)の上部表面に凸レンズ(4、14)が形成される、感光性デバイス。
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FR1354618A FR3006108B1 (fr) | 2013-05-22 | 2013-05-22 | Procede de fabrication d'un dispositif photosensible |
FR1354618 | 2013-05-22 | ||
PCT/FR2014/051093 WO2014188105A1 (fr) | 2013-05-22 | 2014-05-12 | Procédé de fabrication d'un dispositif photosensible |
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US (1) | US9923106B2 (ja) |
EP (1) | EP3000137B1 (ja) |
JP (1) | JP6476168B2 (ja) |
CN (1) | CN105378944B (ja) |
FR (1) | FR3006108B1 (ja) |
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US10132934B2 (en) * | 2014-09-17 | 2018-11-20 | Stmicroelectronics S.R.L. | Integrated detection device, in particular detector of particles such as particulates or alpha particles |
CN107403823A (zh) * | 2016-12-08 | 2017-11-28 | 广东聚华印刷显示技术有限公司 | 像素界定层及其制备方法和应用 |
TWI643320B (zh) * | 2017-09-12 | 2018-12-01 | 鼎元光電科技股份有限公司 | 具寬能隙氧化物之深紫外線感測裝置 |
US10355172B1 (en) * | 2018-04-10 | 2019-07-16 | Nthdegree Technologies Worldwide Inc. | Self-alignment of optical structures to random array of printed micro-LEDs |
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JP2012160691A (ja) * | 2011-01-14 | 2012-08-23 | Sumitomo Electric Ind Ltd | 受光装置、光学装置および受光装置の製造方法 |
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FR2934611B1 (fr) | 2008-08-01 | 2011-03-11 | Electricite De France | Elaboration de couche d'oxyde transparente et conductrice pour utilisation dans une structure photovoltaique. |
WO2012078595A1 (en) * | 2010-12-07 | 2012-06-14 | Afshin Izadian | Adaptive controllable lenses for solar energy collection |
US8717680B2 (en) | 2011-05-06 | 2014-05-06 | Nokia Corporation | Apparatus and associated methods |
JP5120524B1 (ja) * | 2011-06-16 | 2013-01-16 | パナソニック株式会社 | 集光レンズおよび光電変換素子を具備する太陽電池を製造する方法 |
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WO2002070413A1 (fr) * | 2001-03-01 | 2002-09-12 | Nippon Sheet Glass Co., Ltd. | Procede de fabrication d'un element optique |
JP2006023683A (ja) * | 2004-07-09 | 2006-01-26 | Seiko Epson Corp | マイクロレンズの製造方法及び有機エレクトロルミネッセンス素子の製造方法 |
US20080272450A1 (en) * | 2007-05-02 | 2008-11-06 | National Tsing Hua University | Portable optical detection chip and manufacturing method thereof |
JP2012160691A (ja) * | 2011-01-14 | 2012-08-23 | Sumitomo Electric Ind Ltd | 受光装置、光学装置および受光装置の製造方法 |
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JP2021009793A (ja) * | 2019-07-01 | 2021-01-28 | 日本電子株式会社 | 試料支持体および試料支持体の製造方法 |
JP6995088B2 (ja) | 2019-07-01 | 2022-01-14 | 日本電子株式会社 | 試料支持体および試料支持体の製造方法 |
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CN105378944B (zh) | 2017-12-01 |
TW201505200A (zh) | 2015-02-01 |
US9923106B2 (en) | 2018-03-20 |
EP3000137B1 (fr) | 2019-04-10 |
TWI520369B (zh) | 2016-02-01 |
US20160118511A1 (en) | 2016-04-28 |
JP6476168B2 (ja) | 2019-02-27 |
FR3006108B1 (fr) | 2016-12-02 |
CN105378944A (zh) | 2016-03-02 |
FR3006108A1 (fr) | 2014-11-28 |
EP3000137A1 (fr) | 2016-03-30 |
WO2014188105A1 (fr) | 2014-11-27 |
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