JP2016519434A - 2つの封止材フィルムを備える電子装置 - Google Patents
2つの封止材フィルムを備える電子装置 Download PDFInfo
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- JP2016519434A JP2016519434A JP2016509063A JP2016509063A JP2016519434A JP 2016519434 A JP2016519434 A JP 2016519434A JP 2016509063 A JP2016509063 A JP 2016509063A JP 2016509063 A JP2016509063 A JP 2016509063A JP 2016519434 A JP2016519434 A JP 2016519434A
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- film
- sealing film
- electronic device
- backsheet
- ethylene
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- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
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- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
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- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000012005 post-metallocene catalyst Substances 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- 150000003839 salts Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
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- 239000011593 sulfur Substances 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- 229920006029 tetra-polymer Polymers 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- KUAZQDVKQLNFPE-UHFFFAOYSA-N thiram Chemical compound CN(C)C(=S)SSC(=S)N(C)C KUAZQDVKQLNFPE-UHFFFAOYSA-N 0.000 description 1
- 229960002447 thiram Drugs 0.000 description 1
- KSBAEPSJVUENNK-UHFFFAOYSA-L tin(ii) 2-ethylhexanoate Chemical compound [Sn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O KSBAEPSJVUENNK-UHFFFAOYSA-L 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Wire Bonding (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
反対のことが述べられない限り、内容より暗示されるか従来技術の慣習に従って、全ての部及びパーセントは重量に基づく。米国特許実務の目的のために、あらゆる参照される特許、特許出願または公報の内容は、特に定義の開示(この開示に具体的に与えられるあらゆる定義と矛盾しない程度において)及び当該技術の一般知識に対して、その全体が参照により組み込まれる(または、その相当する米国版が参照によって組み込まれる)。
一実施形態では、シラングラフト化エチレンインターポリマーを提供する。エチレンインターポリマーは一般的に知られており、入手可能である。フィルムに使用するための適切なエチレンインターポリマーは比較的低い密度及び係数、ならびに良好な光学及び電気絶縁特性を有する。
一実施形態では、(A)シラン含有エチレンインターポリマーと(B)少なくとも1つのエチレン/α−オレフィンインターポリマーとのブレンドを含むフィルムまたはフィルム層を提供する。本明細書中に用いるように、フィルムは単層または多層フィルムであってもよい。「層」及び「フィルム層」という用語は、全体的により厚い物品(本フィルム)の個々の1つの層または複数の層を指す。本明細書中に用いられる「フィルム」という用語は、「フィルム層」という語句で用いられるとき及び個々の1つの層または複数の層を指すために用いられるときを含め、特定の厚さを明示的に有する場合を除き、電子装置に用いるのに必要な一般的に一貫して均一な厚さを有する、あらゆる比較的薄い、平坦な押出またはキャストされた熱可塑性物品を含む。
上記のあらゆる実施形態に記載されるグラフト化樹脂組成物を含むフィルムを、積層構造に含んでもよい。グラフト化樹脂組成物は、ガラスまたは電子装置の表面など、少なくとも1つの追加層を有する単層フィルムまたは多層フィルムとして提供されてもよい。
材料
Luperox101ペルオキシド:2,5−ビス(tert−ブチルペルオキシ)−2,5−ジメチルヘキサン、Arkema社より提供。
ガラス接着力:本明細書中に記載のフィルムのガラス接着力は、第1の封止材フィルム、第2の封止材フィルム、及びTPEバックシートのガラスの構造を、真空ラミネータにて150℃の真空で3分間、続いて1つの雰囲気での圧力下で7分間ラミネートすることで求められた。太陽モジュールの構造をシミュレーションするのに2枚の封止材を用いた。積層ガラス構造は次に、Instronにて毎分2インチの180°剥離によって試験された。1インチ及び2インチ間の領域の平均値が報告された。
塩分でグラフト化された樹脂を二軸反応押出プロセスを用いて生成された。グラフト化樹脂はペレットに切断され、ホイルバッグに保管された。別に、熱及びUV安定化剤を有するマスターバッチがFCM押出機を用いて生成された。厚さ457μmのフィルム試料を、3層キャスト共押出ライン上に調製した。3つの押出機は全て直径25mmであり、マドック混合部及びスクリュー端を有する。キャストロールは常にB押出機と接触し、C押出機は常にコアを担った。ダイ幅は300mmであった。
Ever Bright Solarより入手可能なもののような156mm×156mmのPV電池を用いて、実施例1〜2及び比較例1についてのPVモジュールを製造した。PV電池を3mm間隔で配置し、76.2mmの長さを有する錫でコーティングされた銅バスリボンなどのバスリボンによって接続して、9−セル単結晶ストリングを製造した。さらなる実施形態では、多結晶電池を用いてもよい。前面封止材フィルム、後面封止材フィルム、及びバックシートを、フィルムの機械方向にて定寸法に切断された。用いられる9−セルストリングについて、封止フィルム及びバックシートは215.9mm×1524mmに切断された。洗浄、スキーギング、及びタオルドライされた3mmのガラスをトップシートに用いた。
表1の配合物についての電気、光学、及び接着特性は以下の表2に提供されている。示されるように、実施例1及び2の封止フィルムは比較例1のものよりも著しく低いゼロせん断粘度を有する一方で、略同一の透過率、ヘイズならびに透明度を保持している。実施例1及び2はまた、比較例1と比較可能な優れたガラス接着力を示す。
Claims (15)
- 受投光フィルムと直接接触する第1の封止フィルムと、バックシートと直接接触する第2の封止フィルムとを備える電子装置であって、前記第1の封止フィルムは前記第2の封止フィルムのものよりも大きいゼロせん断粘度を有する、前記電子装置。
- 前記バックシートは、第2の封止フィルムのもの以下のゼロせん断粘度を有する第1の封止フィルムを備える同等の電子装置のバックシートよりも少ない隆起を含む、請求項1に記載の前記電子装置。
- (i)受投光フィルム、
(ii)第1の封止フィルム、
(iii)少なくとも1つの光起電力電池、
(iv)第2の封止フィルム、及び
(v)バックシートを備える電子装置であって、
前記第1の封止フィルムは前記受投光フィルムと直接接触しており、前記第2の封止フィルムは前記バックシートと直接接触しており、前記少なくとも1つの光起電力電池は前記第1及び第2の封止フィルムと直接接触しており、
前記第1の封止フィルムは前記第2の封止フィルムのものよりも大きいゼロせん断粘度を有する、前記電子装置。 - 前記第1の封止フィルムの前記ゼロせん断粘度は、前記第2の封止フィルムのせん断粘度の700〜10,000Pa・s内になる、請求項1または3のいずれか1項に記載の前記電子装置。
- 前記第2の封止フィルムは400〜900Pa・sのゼロせん断粘度を有する、請求項1または3のいずれか1項に記載の前記電子装置。
- 前記第2の封止フィルムはシラングラフト化エチレン/α−オレフィンインターポリマーを含む、請求項1または3のいずれか1項に記載の前記電子装置。
- 前記第2の封止フィルムはエチレン/α−オレフィンインターポリマーをさらに含む、請求項6に記載の前記電子装置。
- 前記シラングラフト化エチレン/α−オレフィンインターポリマーは、前記第2の封止フィルムの全重量に基づいて、5〜100重量%の前記第2の封止フィルムを含む、請求項6に記載の前記電子装置。
- 前記シラングラフト化エチレン/α−オレフィンインターポリマーは、シラングラフト化エチレン/オクテンインターポリマーである、請求項6に記載の前記電子装置。
- 前記エチレン/α−オレフィンインターポリマーは、前記第2の封止フィルムの全重量に基づいて、0〜50重量%の前記第2の封止フィルムを含む、請求項7に記載の前記電子装置。
- 電子装置における隆起を減少させる方法であって、
第1のゼロせん断粘度を有する第1の封止材フィルムを選択することと、
第2のゼロせん断粘度を有する第2の封止材フィルムを選択することと、を含み、
前記第1のゼロせん断粘度が前記第2のゼロせん断粘度の700〜10,000Pa・s内になる、前記方法。 - 前記第2の封止材フィルムはシラングラフト化エチレン/α−オレフィンインターポリマーを含む、請求項11に記載の前記方法。
- 前記第1の封止材フィルム及び前記第2の封止材フィルムを備える積層構造を形成することを含む、請求項11に記載の前記方法。
- 積層構造の前記形成は、
前記第1の封止材フィルムに受投光トップシートを直接接触させることと、
前記第2の封止材フィルムにバックシートを直接接触させることと、
前記第1及び第2の封止材フィルムの間にあり、それらと直接接触する少なくとも1つの光起電力電池を、前記第1及び第2の封止材フィルムの一部が互いに直接接触するように固定することと、
前記受投光トップシート、第1の封止材フィルム、第2の封止材フィルム、及び前記バックシートを積層温度で積層して接着することと、を含む、請求項13に記載の前記方法。 - 前記シラン含有インターポリマーを架橋することをさらに含む、請求項14に記載の前記方法。
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PCT/US2014/034335 WO2014176088A1 (en) | 2013-04-22 | 2014-04-16 | Electronic devices comprising two encapsulant films |
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CN111971177A (zh) * | 2018-04-16 | 2020-11-20 | 博里利斯股份公司 | 多层元件 |
US11491767B2 (en) | 2018-04-16 | 2022-11-08 | Borealis Ag | Multilayer element |
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WO2011150193A1 (en) * | 2010-05-26 | 2011-12-01 | Dow Global Technologies Llc | Electronic device module comprising polyolefin copolymer with low unsaturation and optional vinyl silane |
WO2012070915A2 (ko) * | 2010-11-26 | 2012-05-31 | 주식회사 엘지화학 | 봉지재 조성물 및 광전지 모듈 |
WO2012082261A1 (en) * | 2010-12-16 | 2012-06-21 | Dow Global Technologies Llc | Silane-containing thermoplastic polyolefin copolymer resins, films, processes for their preparation and photovoltaic module laminate structure comprising such resins and films |
WO2012105331A1 (ja) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | 太陽電池モジュール及びその製造方法 |
WO2013027820A1 (ja) * | 2011-08-24 | 2013-02-28 | 株式会社フジクラ | 電子機器 |
JP2013118302A (ja) * | 2011-12-05 | 2013-06-13 | Bridgestone Corp | 一対の太陽電池用封止膜 |
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US10164137B2 (en) | 2018-12-25 |
CN105122464B (zh) | 2017-12-15 |
KR102219535B1 (ko) | 2021-02-24 |
CN105122464A (zh) | 2015-12-02 |
US20190140122A1 (en) | 2019-05-09 |
BR112015020460B1 (pt) | 2021-02-09 |
MY171949A (en) | 2019-11-08 |
US20160276512A1 (en) | 2016-09-22 |
ES2634023T3 (es) | 2017-09-26 |
US10872990B2 (en) | 2020-12-22 |
BR112015020460A2 (pt) | 2017-07-18 |
EP2989663B1 (en) | 2017-05-31 |
JP6483662B2 (ja) | 2019-03-13 |
KR20160002793A (ko) | 2016-01-08 |
WO2014176088A1 (en) | 2014-10-30 |
EP2989663A1 (en) | 2016-03-02 |
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