JP2016225612A5 - - Google Patents

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Publication number
JP2016225612A5
JP2016225612A5 JP2016096520A JP2016096520A JP2016225612A5 JP 2016225612 A5 JP2016225612 A5 JP 2016225612A5 JP 2016096520 A JP2016096520 A JP 2016096520A JP 2016096520 A JP2016096520 A JP 2016096520A JP 2016225612 A5 JP2016225612 A5 JP 2016225612A5
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JP
Japan
Prior art keywords
light
backplane
switch
pixelated
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016096520A
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English (en)
Japanese (ja)
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JP2016225612A (ja
Filing date
Publication date
Priority claimed from US14/725,472 external-priority patent/US10192892B2/en
Application filed filed Critical
Publication of JP2016225612A publication Critical patent/JP2016225612A/ja
Publication of JP2016225612A5 publication Critical patent/JP2016225612A5/ja
Pending legal-status Critical Current

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JP2016096520A 2015-05-29 2016-05-12 薄膜オプトカプラを使用して形成されるアクティブマトリクスバックプレーン Pending JP2016225612A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/725,472 US10192892B2 (en) 2015-05-29 2015-05-29 Active matrix backplane formed using thin film optocouplers
US14/725,472 2015-05-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020059425A Division JP6794563B2 (ja) 2015-05-29 2020-03-30 薄膜オプトカプラを使用して形成されるアクティブマトリクスバックプレーン

Publications (2)

Publication Number Publication Date
JP2016225612A JP2016225612A (ja) 2016-12-28
JP2016225612A5 true JP2016225612A5 (enExample) 2019-06-13

Family

ID=57397233

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016096520A Pending JP2016225612A (ja) 2015-05-29 2016-05-12 薄膜オプトカプラを使用して形成されるアクティブマトリクスバックプレーン
JP2020059425A Active JP6794563B2 (ja) 2015-05-29 2020-03-30 薄膜オプトカプラを使用して形成されるアクティブマトリクスバックプレーン

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2020059425A Active JP6794563B2 (ja) 2015-05-29 2020-03-30 薄膜オプトカプラを使用して形成されるアクティブマトリクスバックプレーン

Country Status (3)

Country Link
US (1) US10192892B2 (enExample)
JP (2) JP2016225612A (enExample)
KR (1) KR102441106B1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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US10558204B2 (en) 2016-09-19 2020-02-11 Palo Alto Research Center Incorporated System and method for scalable real-time micro-object position control with the aid of a digital computer
US10397529B2 (en) * 2017-04-28 2019-08-27 Palo Alto Research Center Incorporated Transparent optical coupler active matrix array
CN109962085B (zh) * 2017-12-25 2023-08-01 上海耕岩智能科技有限公司 一种监控显示像素发光强度的方法和装置
CN109274425B (zh) * 2018-11-02 2021-11-30 国网四川省电力公司广安供电公司 一种智能跳纤系统的设计方法
US12020399B2 (en) 2020-11-16 2024-06-25 Xerox Corporation System and method for multi-object micro-assembly control with the aid of a digital computer
US11893327B2 (en) 2020-12-14 2024-02-06 Xerox Corporation System and method for machine-learning enabled micro-assembly control with the aid of a digital computer
US11921488B2 (en) 2020-12-15 2024-03-05 Xerox Corporation System and method for machine-learning-enabled micro-object density distribution control with the aid of a digital computer

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US4779126A (en) 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPS60193384A (ja) * 1984-03-15 1985-10-01 Toshiba Corp 光スイツチングデバイス及び光スイツチング表示装置
KR910007142A (ko) 1988-09-30 1991-04-30 미다 가쓰시게 박막 광트랜지스터와 그것을 사용한 광센서어레이
US5200634A (en) 1988-09-30 1993-04-06 Hitachi, Ltd. Thin film phototransistor and photosensor array using the same
US5264720A (en) 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
US5028788A (en) 1990-04-03 1991-07-02 Electromed International Ltd. X-ray sensor array
US5083175A (en) * 1990-09-21 1992-01-21 Xerox Corporation Method of using offset gated gap-cell thin film device as a photosensor
JPH06266318A (ja) * 1993-03-17 1994-09-22 Nippon Telegr & Teleph Corp <Ntt> アクティブマトリクス形液晶装置の駆動方法
JP2878137B2 (ja) 1994-06-29 1999-04-05 シャープ株式会社 増幅型光電変換素子、それを用いた増幅型固体撮像装置、及び増幅型光電変換素子の製造方法
US7038242B2 (en) 2001-02-28 2006-05-02 Agilent Technologies, Inc. Amorphous semiconductor open base phototransistor array
US6885789B2 (en) 2002-06-07 2005-04-26 Fujitsu Limited Optical switch fabricated by a thin film process
JP2004264349A (ja) * 2003-02-07 2004-09-24 Agilent Technol Inc アクティブマトリクスディスプレイ回路基板、それを含むディスプレイパネル、その検査方法、及びそのための検査装置
GB0401578D0 (en) 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Phototransistor
EP1679749A1 (en) 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Semiconductor photodiode and method of making
JP4792899B2 (ja) * 2005-09-29 2011-10-12 ブラザー工業株式会社 光走査装置及びそれを備えた網膜走査表示装置
JP4122503B2 (ja) * 2006-11-30 2008-07-23 イーイメージテクノロジー株式会社 Ledディスプレイ
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WO2012121372A1 (ja) * 2011-03-10 2012-09-13 シャープ株式会社 表示素子及び電子機器
US9305497B2 (en) * 2012-08-31 2016-04-05 Qualcomm Mems Technologies, Inc. Systems, devices, and methods for driving an analog interferometric modulator
US20140212085A1 (en) * 2013-01-29 2014-07-31 Georgios Margaritis Optocoupler
US9946135B2 (en) * 2015-05-29 2018-04-17 Palo Alto Research Center Incorporated High voltage thin film optical switch

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