JP2016219578A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2016219578A
JP2016219578A JP2015101980A JP2015101980A JP2016219578A JP 2016219578 A JP2016219578 A JP 2016219578A JP 2015101980 A JP2015101980 A JP 2015101980A JP 2015101980 A JP2015101980 A JP 2015101980A JP 2016219578 A JP2016219578 A JP 2016219578A
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processing chamber
vacuum
plasma
pressure
vacuum processing
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JP2015101980A
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Japanese (ja)
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JP2016219578A5 (https=
Inventor
優作 属
Yusaku Sakka
優作 属
征洋 長谷
Yukihiro Hase
征洋 長谷
浩平 佐藤
Kohei Sato
浩平 佐藤
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Priority to JP2015101980A priority Critical patent/JP2016219578A/ja
Publication of JP2016219578A publication Critical patent/JP2016219578A/ja
Publication of JP2016219578A5 publication Critical patent/JP2016219578A5/ja
Pending legal-status Critical Current

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JP2015101980A 2015-05-19 2015-05-19 プラズマ処理装置 Pending JP2016219578A (ja)

Priority Applications (1)

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JP2015101980A JP2016219578A (ja) 2015-05-19 2015-05-19 プラズマ処理装置

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JP2015101980A JP2016219578A (ja) 2015-05-19 2015-05-19 プラズマ処理装置

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JP2016219578A true JP2016219578A (ja) 2016-12-22
JP2016219578A5 JP2016219578A5 (https=) 2018-02-22

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JP2015101980A Pending JP2016219578A (ja) 2015-05-19 2015-05-19 プラズマ処理装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116072500A (zh) * 2021-11-02 2023-05-05 细美事有限公司 用于处理基板的装置和用于处理基板的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62204528A (ja) * 1986-03-05 1987-09-09 Hitachi Ltd ドライプロセス処理装置
JPH02151027A (ja) * 1988-12-01 1990-06-11 Nec Corp 半導体装置の製造装置
JPH0653169A (ja) * 1992-07-28 1994-02-25 Tokyo Electron Ltd 処理室圧力安定化方法
JP2002363755A (ja) * 2001-06-06 2002-12-18 Sharp Corp プラズマ処理装置およびプラズマ処理装置の調圧方法
JP2007027661A (ja) * 2005-07-21 2007-02-01 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理装置の制御方法
WO2007026889A1 (ja) * 2005-09-01 2007-03-08 Matsushita Electric Industrial Co., Ltd. プラズマ処理装置、プラズマ処理方法、これに用いられる誘電体窓及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62204528A (ja) * 1986-03-05 1987-09-09 Hitachi Ltd ドライプロセス処理装置
JPH02151027A (ja) * 1988-12-01 1990-06-11 Nec Corp 半導体装置の製造装置
JPH0653169A (ja) * 1992-07-28 1994-02-25 Tokyo Electron Ltd 処理室圧力安定化方法
JP2002363755A (ja) * 2001-06-06 2002-12-18 Sharp Corp プラズマ処理装置およびプラズマ処理装置の調圧方法
JP2007027661A (ja) * 2005-07-21 2007-02-01 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理装置の制御方法
WO2007026889A1 (ja) * 2005-09-01 2007-03-08 Matsushita Electric Industrial Co., Ltd. プラズマ処理装置、プラズマ処理方法、これに用いられる誘電体窓及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116072500A (zh) * 2021-11-02 2023-05-05 细美事有限公司 用于处理基板的装置和用于处理基板的方法

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