JP2016204187A5 - - Google Patents
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- Publication number
- JP2016204187A5 JP2016204187A5 JP2015085606A JP2015085606A JP2016204187A5 JP 2016204187 A5 JP2016204187 A5 JP 2016204187A5 JP 2015085606 A JP2015085606 A JP 2015085606A JP 2015085606 A JP2015085606 A JP 2015085606A JP 2016204187 A5 JP2016204187 A5 JP 2016204187A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- abrasive grains
- epitaxial wafer
- manufacturing
- slurry containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005498 polishing Methods 0.000 claims 21
- 239000006061 abrasive grain Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000004744 fabric Substances 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000002002 slurry Substances 0.000 claims 4
- 239000000969 carrier Substances 0.000 claims 3
- 239000002245 particle Substances 0.000 claims 3
- 239000007864 aqueous solution Substances 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 210000003229 CMP Anatomy 0.000 claims 1
- 229920005830 Polyurethane Foam Polymers 0.000 claims 1
- 239000011496 polyurethane foam Substances 0.000 claims 1
Claims (5)
研磨布が貼付された上下定盤と、該上下定盤間でシリコンウェーハを保持するキャリアとを具備する両面研磨装置を用い、第１の砥粒を含むスラリーを供給しながら、前記シリコンウェーハの両面を研磨する１次研磨を行う工程と、
前記両面研磨装置を用い、前記第１の砥粒より平均粒径の小さい第２の砥粒を含むスラリーを供給しながら、前記１次研磨を行った後のシリコンウェーハの両面を研磨する２次研磨を行う工程と、
前記２次研磨を行った後のシリコンウェーハ表面に片面ＣＭＰ研磨を行うことなくエピタキシャル層を成長させる工程と
を有し、
前記１次研磨と前記２次研磨を同一の両面研磨装置を用いて行うことを特徴とするエピタキシャルウェーハの製造方法。 An epitaxial wafer manufacturing method comprising:
Using a double-side polishing apparatus comprising an upper and lower surface plate with a polishing cloth and a carrier for holding the silicon wafer between the upper and lower surface plates, while supplying slurry containing the first abrasive grains, A step of performing primary polishing for polishing both surfaces;
Secondary polishing the both sides of the silicon wafer after the primary polishing while supplying slurry containing second abrasive grains having an average particle size smaller than the first abrasive grains using the double-side polishing apparatus Polishing, and
Possess a step of growing an epitaxial layer without a single side CMP polishing the silicon wafer surface after the secondary polishing,
An epitaxial wafer manufacturing method , wherein the primary polishing and the secondary polishing are performed using the same double-side polishing apparatus .
前記２次研磨を行う工程において、前記第２の砥粒を含むスラリーとして、平均粒径２０ｎｍ〜４０ｎｍのシリカ砥粒を含むアルカリ性水溶液を用いることを特徴とする請求項１に記載のエピタキシャルウェーハの製造方法。 In the step of performing the primary polishing, as the slurry containing the first abrasive grains, an alkaline aqueous solution containing silica abrasive grains having an average particle diameter of 50 nm to 100 nm is used,
2. The epitaxial wafer according to claim 1, wherein an alkaline aqueous solution containing silica abrasive grains having an average particle diameter of 20 nm to 40 nm is used as the slurry containing the second abrasive grains in the step of performing the secondary polishing. Production method.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015085606A JP6234957B2 (en) | 2015-04-20 | 2015-04-20 | Epitaxial wafer manufacturing method |
| PCT/JP2016/001183 WO2016170721A1 (en) | 2015-04-20 | 2016-03-04 | Method for manufacturing epitaxial wafer |
| TW105106854A TW201708632A (en) | 2015-04-20 | 2016-03-07 | Method for manufacturing epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015085606A JP6234957B2 (en) | 2015-04-20 | 2015-04-20 | Epitaxial wafer manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016204187A JP2016204187A (en) | 2016-12-08 |
| JP2016204187A5 true JP2016204187A5 (en) | 2017-03-02 |
| JP6234957B2 JP6234957B2 (en) | 2017-11-22 |
Family
ID=57143054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015085606A Active JP6234957B2 (en) | 2015-04-20 | 2015-04-20 | Epitaxial wafer manufacturing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6234957B2 (en) |
| TW (1) | TW201708632A (en) |
| WO (1) | WO2016170721A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6635088B2 (en) * | 2017-04-24 | 2020-01-22 | 信越半導体株式会社 | Polishing method of silicon wafer |
| DE102017210423A1 (en) | 2017-06-21 | 2018-12-27 | Siltronic Ag | Method, control system and plant for processing a semiconductor wafer and semiconductor wafer |
| CN111316399B (en) * | 2017-08-31 | 2023-12-26 | 胜高股份有限公司 | Method for manufacturing semiconductor wafer |
| US11621171B2 (en) | 2018-09-25 | 2023-04-04 | Nissan Chemical Corporation | Method for polishing silicon wafer with reduced wear on carrier, and polishing liquid used therein |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004195571A (en) * | 2002-12-17 | 2004-07-15 | Noritake Co Ltd | Work carrier for double-sided polishing machine and its manufacturing method |
| JP2010021487A (en) * | 2008-07-14 | 2010-01-28 | Sumco Corp | Semiconductor wafer and manufacturing method thereof |
| JP5401683B2 (en) * | 2008-08-01 | 2014-01-29 | 株式会社Ｓｕｍｃｏ | Double-sided mirror semiconductor wafer and method for manufacturing the same |
| JP5644401B2 (en) * | 2010-11-15 | 2014-12-24 | 株式会社Sumco | Epitaxial wafer manufacturing method and epitaxial wafer |
| JP5768554B2 (en) * | 2011-07-21 | 2015-08-26 | 旭硝子株式会社 | Manufacturing method of glass substrate for magnetic recording medium and glass substrate for magnetic recording medium |
| US20140319411A1 (en) * | 2011-11-16 | 2014-10-30 | Nissan Chemical Industries, Ltd. | Semiconductor wafer polishing liquid composition |
-
2015
- 2015-04-20 JP JP2015085606A patent/JP6234957B2/en active Active
-
2016
- 2016-03-04 WO PCT/JP2016/001183 patent/WO2016170721A1/en active Application Filing
- 2016-03-07 TW TW105106854A patent/TW201708632A/en unknown
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