JP2016201362A - Organic light-emitting display device - Google Patents

Organic light-emitting display device Download PDF

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JP2016201362A
JP2016201362A JP2016077902A JP2016077902A JP2016201362A JP 2016201362 A JP2016201362 A JP 2016201362A JP 2016077902 A JP2016077902 A JP 2016077902A JP 2016077902 A JP2016077902 A JP 2016077902A JP 2016201362 A JP2016201362 A JP 2016201362A
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film
protective layer
organic light
light emitting
display device
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JP6814546B2 (en
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虎鎭 尹
Ho Jin Yoon
虎鎭 尹
炳箕 金
Byoung Ki Kim
炳箕 金
大宇 李
Dae-Woo Lee
大宇 李
胤謨 ▲鄭▼
胤謨 ▲鄭▼
Yun-Mo Chung
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Samsung Display Co Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an organic light-emitting display device that can suppress the occurrence of defects such as pixel contraction by blocking various impurities, oxygen, or the like, included in a filler from permeating into an organic light-emitting diode through a pixel defining film and a planarization film.SOLUTION: An organic light-emitting display device includes an organic light-emitting diode, a pixel defining film, a first protection layer, a second protection layer, and a filler. The organic light-emitting diode is formed in a display area. The pixel defining film includes a first portion formed in the display area and a second portion formed in a non-display area surrounding the display area. The first protection layer covers at least the second portion of the pixel defining film. The second protection layer is formed in the non-display area, and contacts a part of the first protection layer and a part of the second portion of the pixel defining film. The filler covers the first protection layer and the second protection layer.SELECTED DRAWING: Figure 2

Description

本発明は、有機発光表示装置に関する。   The present invention relates to an organic light emitting display device.

有機発光表示装置は、それ自体が発光の特性を有し、液晶表示装置とは異なって別途の光源を必要としないので、厚さ及び重量を減少させることができる。また、有機発光表示装置は、低い消費電力、高い輝度、及び速い反応速度などの高品位特性を示す。   The organic light emitting display device itself has a light emitting characteristic, and unlike the liquid crystal display device, it does not require a separate light source, and thus the thickness and weight can be reduced. In addition, the organic light emitting display device exhibits high quality characteristics such as low power consumption, high luminance, and fast reaction speed.

通常の有機発光表示装置は、基板と、基板上に形成された駆動回路部及び有機発光ダイオードと、有機発光ダイオードの発光領域を定義する画素定義膜と、基板に対向配置される封止基板と、を含む。基板と封止基板とはシール材によって一体に接合され、基板と封止基板との間の空間は充填剤で満たされる。充填剤は、有機発光表示装置の強度を高めて、耐久性を向上させる機能を果たす。   A normal organic light emitting display device includes a substrate, a drive circuit unit and an organic light emitting diode formed on the substrate, a pixel definition film that defines a light emitting region of the organic light emitting diode, and a sealing substrate disposed to face the substrate. ,including. The substrate and the sealing substrate are joined together by a sealing material, and the space between the substrate and the sealing substrate is filled with a filler. The filler functions to increase the strength of the organic light emitting display device and improve durability.

本発明の目的は、充填剤に含まれている各種不純物または酸素などが、画素定義膜及び平坦化膜を通じて有機発光ダイオードに侵入することを遮断して、画素収縮などの不良発生を抑制できる有機発光表示装置を提供することにある。   An object of the present invention is to prevent various impurities such as oxygen or oxygen contained in the filler from entering the organic light emitting diode through the pixel definition film and the planarization film, thereby suppressing the occurrence of defects such as pixel shrinkage. It is to provide a light emitting display device.

本発明の一実施形態による有機発光表示装置は、有機発光ダイオード、画素定義膜、第１保護層、第２保護層、及び充填剤を含む。有機発光ダイオードは表示領域に形成される。画素定義膜は、表示領域に形成された第１部分、及び表示領域を取り囲む非表示領域に形成された第２部分を含む。第１保護層は画素定義膜の少なくとも第２部分を覆う。第２保護層は非表示領域に形成され、第１保護層の一部及び画素定義膜の第２部分の一部と接触する。充填剤は第１保護層及び第２保護層を覆う。   An organic light emitting display device according to an embodiment of the present invention includes an organic light emitting diode, a pixel definition film, a first protective layer, a second protective layer, and a filler. The organic light emitting diode is formed in the display area. The pixel definition film includes a first portion formed in the display region and a second portion formed in a non-display region surrounding the display region. The first protective layer covers at least the second portion of the pixel defining film. The second protective layer is formed in the non-display region, and is in contact with a part of the first protective layer and a part of the second part of the pixel definition film. The filler covers the first protective layer and the second protective layer.

有機発光表示装置は、画素定義膜と、第２保護層の下に形成された平坦化膜とをさらに含んでもよい。第２保護層は、画素定義膜の外側で平坦化膜の表面を全て覆ってもよい。画素定義膜と平坦化膜はシリコーン系高分子を含んでもよい。   The organic light emitting display device may further include a pixel definition film and a planarization film formed under the second protective layer. The second protective layer may cover the entire surface of the planarization film outside the pixel definition film. The pixel definition film and the planarization film may include a silicone polymer.

平坦化膜は、開口部を形成して平坦化膜の下の層間絶縁膜を露出させてもよく、第２保護層は露出した層間絶縁膜を覆ってもよい。   The planarizing film may form an opening to expose the interlayer insulating film under the planarizing film, and the second protective layer may cover the exposed interlayer insulating film.

有機発光ダイオードは、画素電極、発光層、及び共通電極を含んでもよく、キャッピング層により覆われてもよい。第１保護層は共通電極と接触し、共通電極と同様の物質で形成され、第２保護層は第１保護層と接触し、画素電極と同様の物質で形成されてもよい。   The organic light emitting diode may include a pixel electrode, a light emitting layer, and a common electrode, and may be covered with a capping layer. The first protective layer may be in contact with the common electrode and formed of the same material as the common electrode, and the second protective layer may be in contact with the first protective layer and formed of the same material as the pixel electrode.

他の一側面で、第１保護層はキャッピング層と接触し、キャッピング層と同様の物質で形成され、第２保護層は第１保護層と接触し、画素電極と同様の物質で形成されてもよい。第２保護層は、第１透明膜、金属薄膜、及び第２透明膜の多層膜で形成されてもよい。   In another aspect, the first protective layer is in contact with the capping layer and formed of the same material as the capping layer, and the second protective layer is in contact with the first protective layer and formed of the same material as the pixel electrode. Also good. The second protective layer may be formed of a multilayer film including a first transparent film, a metal thin film, and a second transparent film.

他の一側面で、第１保護層はキャッピング層と接触し、キャッピング層と同様の物質で形成され、第２保護層は第１保護層と接触し、キャッピング層と同様の物質で形成されてもよい。第１保護層及び第２保護層は互いに異なる層に形成されてもよい。   In another aspect, the first protective layer is in contact with the capping layer and formed of the same material as the capping layer, and the second protective layer is in contact with the first protective layer and formed of the same material as the capping layer. Also good. The first protective layer and the second protective layer may be formed in different layers.

本実施形態の有機発光表示装置において、第１保護層及び第２保護層は画素定義膜及び平坦化膜が充填剤と接触することを遮断して、充填剤に含まれている各種不純物または酸素などが画素定義膜及び平坦化膜に拡散することを防止する。有機発光表示装置は、充填剤による有機発光ダイオードの劣化及び画素収縮などの不良を抑制することができる。   In the organic light emitting display device of this embodiment, the first protective layer and the second protective layer block the pixel definition film and the planarization film from coming into contact with the filler, and various impurities or oxygen contained in the filler. And the like are prevented from diffusing into the pixel defining film and the planarizing film. The organic light emitting display device can suppress defects such as deterioration of the organic light emitting diode and pixel contraction due to the filler.

本発明の第１実施形態による有機発光表示装置の斜視図である。1 is a perspective view of an OLED display according to a first exemplary embodiment of the present invention. 図１のＩＩ−ＩＩ線に沿った有機発光表示装置の部分拡大断面図である。FIG. 2 is a partial enlarged cross-sectional view of the organic light emitting display device taken along line II-II in FIG. 1. 図１のＩＩＩ−ＩＩＩ線に沿った有機発光表示装置の部分拡大断面図である。FIG. 3 is a partial enlarged cross-sectional view of the organic light emitting display device taken along line III-III in FIG. 1. 本発明の第２実施形態による有機発光表示装置の部分拡大断面図である。FIG. 5 is a partially enlarged cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention. 本発明の第３実施形態による有機発光表示装置の部分拡大断面図である。FIG. 5 is a partially enlarged cross-sectional view of an organic light emitting display device according to a third embodiment of the present invention.

以下、添付した図面を参照して、本発明の実施形態について本発明が属する技術分野における通常の知識を有する者が容易に実施できるように詳細に説明する。本発明は、種々の異なる形態に具現されることができ、ここで説明する実施形態に限られない。   Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily carry out the embodiments. The present invention can be embodied in various different forms and is not limited to the embodiments described herein.

明細書の全体において、層、膜、領域、板などの部分が他の部分の「上」にあると表現されるとき、これは他の部分の「すぐ上」にある場合だけでなく、その中間に他の部分がある場合も含む。そして「〜の上に」というのは、対象になる部分の上または下に位置することを意味し、必ず重力方向を基準として上側に位置することを意味しない。   Throughout the specification, when a part such as a layer, film, region, plate, etc. is described as being “on” another part, this is not only the case when it is “just above” the other part. This includes cases where there are other parts in the middle. And “above” means that it is located above or below the target part, and does not necessarily mean that it is located above the direction of gravity.

明細書の全体において、ある部分がある構成要素を「含む」とするとき、これは特に反対になる記載がない限り、他の構成要素をさらに含むことができるのを意味する。図面における各構成の大きさ及び厚さなどは、説明の便宜のために任意に示したので、本発明は図示したものによって限定されない。   Throughout the specification, when a part “includes” a component, this means that the component may further include other components unless specifically stated to the contrary. Since the size, thickness, and the like of each component in the drawings are arbitrarily shown for convenience of explanation, the present invention is not limited to the illustrated one.

図１は、本発明の第１実施形態による有機発光表示装置の斜視図であり、図２は、図１のＩＩ−ＩＩ線に沿った有機発光表示装置の部分拡大断面図である。   FIG. 1 is a perspective view of an organic light emitting display device according to a first embodiment of the present invention, and FIG. 2 is a partial enlarged cross-sectional view of the organic light emitting display device taken along line II-II of FIG.

図１を参照すると、第１実施形態の有機発光表示装置１００は、表示領域ＤＡ及び非表示領域ＮＤＡを含む基板１１０と、基板１１０上の表示領域ＤＡに形成された複数の画素ＰＸと、基板１１０に対向配置される封止基板１２０と、基板１１０と封止基板１２０との間の空間を満たす充填剤１３０と、を含む。基板１１０及び封止基板１２０はシール材１４０によって一体に密封接合される。   Referring to FIG. 1, the OLED display 100 according to the first embodiment includes a substrate 110 including a display area DA and a non-display area NDA, a plurality of pixels PX formed in the display area DA on the substrate 110, and a substrate. 110 and a filler 130 that fills a space between the substrate 110 and the sealing substrate 120. The substrate 110 and the sealing substrate 120 are hermetically sealed together by a sealing material 140.

表示領域ＤＡでは複数の画素ＰＸから放出される光の組み合わせでイメージが表示される。各画素ＰＸは、駆動回路部と、有機発光ダイオードＯＬＥＤとを含む。駆動回路部は、少なくとも２つの薄膜トランジスタと、少なくとも１つのキャパシタとを含む。基板１１０の上には有機発光ダイオードＯＬＥＤの発光領域を定義する画素定義膜１１５が形成される。画素定義膜１１５は表示領域ＤＡより大きく形成される。   In the display area DA, an image is displayed by a combination of light emitted from the plurality of pixels PX. Each pixel PX includes a drive circuit unit and an organic light emitting diode OLED. The drive circuit unit includes at least two thin film transistors and at least one capacitor. A pixel defining film 115 that defines a light emitting region of the organic light emitting diode OLED is formed on the substrate 110. The pixel definition film 115 is formed larger than the display area DA.

第１実施形態の有機発光表示装置１００は、非表示領域ＮＤＡで画素定義膜１１５の表面を覆う第１保護層１６１と、第１保護層１６１と接触し、画素定義膜１１５の外側に形成された第２保護層１６２とを含む。充填剤１３０は、非表示領域ＮＤＡで第１保護層１６１及び第２保護層１６２と接触する。   The organic light emitting display device 100 according to the first embodiment is formed outside the pixel definition film 115 in contact with the first protective layer 161 that covers the surface of the pixel definition film 115 in the non-display area NDA and the first protection layer 161. And a second protective layer 162. The filler 130 contacts the first protective layer 161 and the second protective layer 162 in the non-display area NDA.

画素定義膜１１５は、表示領域ＤＡに形成された第１部分と、非表示領域ＮＤＡに形成された第２部分とを含む。第１保護層１６１は画素定義膜１１５の少なくとも第２部分を覆う。第２保護層１６２は非表示領域ＮＤＡに形成され、第１保護層１６１の一部と接触し、画素定義膜１１５の第２部分の一部と接触する。充填剤１３０は第１保護層及び第２保護層１６１、１６２を覆う。   The pixel definition film 115 includes a first portion formed in the display area DA and a second portion formed in the non-display area NDA. The first protective layer 161 covers at least the second portion of the pixel defining film 115. The second protective layer 162 is formed in the non-display area NDA, contacts a part of the first protective layer 161, and contacts a part of the second part of the pixel definition film 115. The filler 130 covers the first protective layer and the second protective layer 161 and 162.

第１保護層１６１及び第２保護層１６２は画素定義膜１１５と平坦化膜１１４が充填剤１３０と接触することを遮断して、充填剤１３０に含まれている各種不純物または酸素などが画素定義膜１１５と平坦化膜１１４に拡散することを防止する。したがって、第１実施形態の有機発光表示装置１００は、充填剤１３０による有機発光ダイオードＯＬＥＤの劣化と画素収縮などの不良を抑制することができる。   The first protective layer 161 and the second protective layer 162 block the pixel definition film 115 and the planarization film 114 from contacting the filler 130, and various impurities or oxygen contained in the filler 130 define the pixel. Diffusion to the film 115 and the planarizing film 114 is prevented. Therefore, the organic light emitting display device 100 of the first embodiment can suppress defects such as deterioration of the organic light emitting diode OLED and pixel contraction due to the filler 130.

以下、有機発光表示装置１００の断面構造についてさらに詳細に説明する。   Hereinafter, the cross-sectional structure of the organic light emitting display device 100 will be described in more detail.

基板１１０の上にバッファー層１１１が形成される。基板１１０は、ガラス、石英、セラミック、高分子フィルムなどで形成されてもよく、光透明性を有してもよい。バッファー層１１１は、窒化ケイ素（ＳｉＮｘ）の単一膜、または窒化ケイ素（ＳｉＮｘ）と酸化ケイ素（ＳｉＯ２）の二重膜で形成されてもよい。バッファー層１１１は、基板１１０を通した不純物の浸透を防止し、表面を平坦化する役割を果たす。 A buffer layer 111 is formed on the substrate 110. The substrate 110 may be formed of glass, quartz, ceramic, a polymer film, or the like, and may have light transparency. The buffer layer 111 may be formed of a single film of silicon nitride (SiNx) or a double film of silicon nitride (SiNx) and silicon oxide (SiO 2 ). The buffer layer 111 plays a role of preventing the permeation of impurities through the substrate 110 and planarizing the surface.

バッファー層１１１の上に半導体層１５１が形成されてもよい。半導体層１５１は、ポリシリコンまたは酸化物半導体で形成されてもよく、酸化物半導体で形成された半導体層１５１は別途の保護膜によって覆われてもよい。半導体層１５１は、不純物がドーピングされないチャネル領域と、チャネル領域の両側に位置して、不純物がドーピングされたソース領域及びドレイン領域を含む。   A semiconductor layer 151 may be formed on the buffer layer 111. The semiconductor layer 151 may be formed of polysilicon or an oxide semiconductor, and the semiconductor layer 151 formed of an oxide semiconductor may be covered with a separate protective film. The semiconductor layer 151 includes a channel region that is not doped with impurities, and a source region and a drain region that are located on both sides of the channel region and are doped with impurities.

半導体層１５１の上にゲート絶縁膜１１２が形成される。ゲート絶縁膜１１２は、窒化ケイ素（ＳｉＮｘ）または酸化ケイ素（ＳｉＯ２）の単一膜、またはこれらの積層膜で形成されてもよい。ゲート絶縁膜１１２の上にゲート電極１５２が形成される。ゲート電極１５２は半導体層１５１のチャネル領域と重なり、Ａｕ、Ａｇ、Ｃｕ、Ｎｉ、Ｐｔ、Ｐｄ、Ａｌ、及びＭｏなどを含んでもよい。 A gate insulating film 112 is formed on the semiconductor layer 151. The gate insulating film 112 may be formed of a single film of silicon nitride (SiNx) or silicon oxide (SiO 2 ), or a stacked film thereof. A gate electrode 152 is formed on the gate insulating film 112. The gate electrode 152 overlaps with the channel region of the semiconductor layer 151 and may include Au, Ag, Cu, Ni, Pt, Pd, Al, and Mo.

ゲート電極１５２の上に層間絶縁膜１１３が形成される。層間絶縁膜１１３は、窒化ケイ素（ＳｉＮｘ）または酸化ケイ素（ＳｉＯ２）の単一膜、またはこれらの積層膜で形成されてもよい。 An interlayer insulating film 113 is formed on the gate electrode 152. The interlayer insulating film 113 may be formed of a single film of silicon nitride (SiNx) or silicon oxide (SiO 2 ), or a stacked film thereof.

層間絶縁膜１１３の上にソース電極１５３及びドレイン電極１５４が形成される。ソース電極１５３及びドレイン電極１５４は、層間絶縁膜１１３及びゲート絶縁膜１１２に形成されたビアホールを通じて半導体層１５１のソース領域及びドレイン領域にそれぞれ接続される。ソース電極１５３及びドレイン電極１５４は、Ｍｏ／Ａｌ／ＭｏまたはＴｉ／Ａｌ／Ｔｉのような金属多層膜で形成されてもよい。   A source electrode 153 and a drain electrode 154 are formed on the interlayer insulating film 113. The source electrode 153 and the drain electrode 154 are connected to the source region and the drain region of the semiconductor layer 151 through via holes formed in the interlayer insulating film 113 and the gate insulating film 112, respectively. The source electrode 153 and the drain electrode 154 may be formed of a metal multilayer film such as Mo / Al / Mo or Ti / Al / Ti.

図２では、トップゲート方式の駆動薄膜トランジスタＴＦＴを一例として示したが、駆動薄膜トランジスタＴＦＴの構造は示した例に限られない。駆動回路部は、スイッチング薄膜トランジスタ、駆動薄膜トランジスタ、及びストレージキャパシタを含むが、便宜上、図２では駆動薄膜トランジスタＴＦＴのみを示した。   In FIG. 2, the top gate type driving thin film transistor TFT is shown as an example, but the structure of the driving thin film transistor TFT is not limited to the example shown. The drive circuit portion includes a switching thin film transistor, a drive thin film transistor, and a storage capacitor. For convenience, only the drive thin film transistor TFT is shown in FIG.

駆動薄膜トランジスタＴＦＴは、平坦化膜１１４によって覆われ、有機発光ダイオードＯＬＥＤと接続されて有機発光ダイオードＯＬＥＤを駆動させる。平坦化膜１１４の上に画素電極１５５が形成される。画素電極１５５は、画素ごとに１つずつ形成され、平坦化膜１１４に形成されたビアホールを通じて駆動薄膜トランジスタＴＦＴのドレイン電極１５４と接続される。   The driving thin film transistor TFT is covered with the planarization film 114 and connected to the organic light emitting diode OLED to drive the organic light emitting diode OLED. A pixel electrode 155 is formed on the planarization film 114. One pixel electrode 155 is formed for each pixel, and is connected to the drain electrode 154 of the driving thin film transistor TFT through a via hole formed in the planarization film 114.

平坦化膜１１４及び画素電極１５５の上に画素定義膜１１５が形成される。画素定義膜１１５は、開口部ＯＰを形成して発光層１５６が位置する画素電極１５５の中央部を露出させる。つまり、開口部ＯＰは有機発光ダイオードＯＬＥＤの発光領域を定義する役割を果たす。   A pixel definition film 115 is formed on the planarization film 114 and the pixel electrode 155. The pixel definition film 115 forms an opening OP and exposes the central portion of the pixel electrode 155 where the light emitting layer 156 is located. That is, the opening OP plays a role of defining a light emitting region of the organic light emitting diode OLED.

画素定義膜１１５は、高価な感光性ポリイミドを代替する比較的低い値段のシリコーン系高分子で形成されてもよい。そして、平坦化膜１１４も画素定義膜１１５と同一のシリコーン系高分子で形成されてもよい。この場合、材料費を低くして有機発光表示装置１００の原価節減に寄与する。   The pixel defining film 115 may be formed of a relatively low-cost silicone polymer that replaces expensive photosensitive polyimide. The planarization film 114 may also be formed of the same silicone polymer as the pixel definition film 115. In this case, the material cost is reduced, which contributes to cost reduction of the organic light emitting display device 100.

画素電極１５５の上に発光層１５６が形成され、発光層１５６及び画素定義膜１１５の上に共通電極１５７が形成される。共通電極１５７は画素別区分なしに表示領域ＤＡの全体に形成される。画素電極１５５と共通電極１５７のいずれか１つは発光層１５６に正孔を注入し、他の１つは発光層１５６に電子を注入する。   A light emitting layer 156 is formed on the pixel electrode 155, and a common electrode 157 is formed on the light emitting layer 156 and the pixel definition film 115. The common electrode 157 is formed over the entire display area DA without pixel-specific division. One of the pixel electrode 155 and the common electrode 157 injects holes into the light emitting layer 156, and the other one injects electrons into the light emitting layer 156.

発光層１５６は有機発光層を含み、正孔注入層、正孔輸送層、電子輸送層、及び電子注入層のうちの少なくとも１つを含む。画素電極１５５が正孔を注入するアノード（ａｎｏｄｅ）である場合、画素電極１５５の上に正孔注入層、正孔輸送層、有機発光層、電子輸送層、及び電子注入層が順次に積層されてもよい。有機発光層を除いたそれ以外の層は表示領域ＤＡの全体に形成されてもよい。   The light emitting layer 156 includes an organic light emitting layer, and includes at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. When the pixel electrode 155 is an anode for injecting holes, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer are sequentially stacked on the pixel electrode 155. May be. Other layers except the organic light emitting layer may be formed on the entire display area DA.

有機発光表示装置１００が背面発光型である場合、画素電極１５５は透明膜または半透明膜で形成され、共通電極１５７は反射膜で形成される。発光層１５６から放出された光は共通電極１５７から反射し、画素電極１５５及び基板１１０を透過して外部に放出される。画素電極１５５が半透明膜で形成される場合、共通電極１５７から反射した光の一部は画素電極１５５から再反射し、共振構造を形成して光抽出効率を上げる。   When the organic light emitting display device 100 is a back emission type, the pixel electrode 155 is formed of a transparent film or a semi-transparent film, and the common electrode 157 is formed of a reflective film. The light emitted from the light emitting layer 156 is reflected from the common electrode 157, passes through the pixel electrode 155 and the substrate 110, and is emitted to the outside. When the pixel electrode 155 is formed of a semi-transparent film, a part of the light reflected from the common electrode 157 is re-reflected from the pixel electrode 155 to form a resonance structure and increase the light extraction efficiency.

有機発光表示装置１００が前面発光型である場合、画素電極１５５は反射膜で形成され、共通電極１５７は透明膜または半透明膜で形成される。   When the organic light emitting display device 100 is a front emission type, the pixel electrode 155 is formed of a reflective film, and the common electrode 157 is formed of a transparent film or a semi-transparent film.

反射膜は、Ａｕ、Ａｇ、Ｍｇ、Ａｌ、Ｐｔ、Ｐｄ、Ｎｉ、Ｎｄ、Ｉｒ、Ｃｒなどを含んでもよい。透明膜はＩＴＯ（ｉｎｄｉｕｍ ｔｉｎ ｏｘｉｄｅ）、ＩＺＯ（ｉｎｄｉｕｍ ｚｉｎｃ ｏｘｉｄｅ）、ＺｎＯ、Ｉｎ２Ｏ３等を含んでもよい。半透明膜は、Ｌｉ、Ｃａ、ＬｉＦ／Ｃａ、ＬｉＦ／Ａｌ、Ａｌ、Ａｇ、Ｍｇなどを含む金属薄膜で形成されてもよく、金属薄膜と透明膜との積層膜で形成されてもよい。例えば、半透明膜はＩＴＯ／Ａｇ／ＩＴＯの多層膜で形成されてもよい。 The reflective film may include Au, Ag, Mg, Al, Pt, Pd, Ni, Nd, Ir, Cr, and the like. The transparent film may include ITO (indium tin oxide), IZO (indium zinc oxide), ZnO, In 2 O 3 and the like. The translucent film may be formed of a metal thin film containing Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, or the like, or may be formed of a laminated film of a metal thin film and a transparent film. For example, the translucent film may be formed of a multilayer film of ITO / Ag / ITO.

基板１１０と封止基板１２０とはシール材１４０によって一体に接合される。シール材１４０は基板１１０及び封止基板１２０の周縁に形成され、ガラスフリットのような無機物またはエポキシのような有機物を含んでもよい。シール材１４０の内側にはゲッター１４５が形成されてもよい。ゲッター１４５は、シール材１４０を通じて侵入する水分または酸素を吸着する機能を行い、水分または酸素との反応性に優れたＣａＯ、ＢａＯ、ＭｇＯなどを含んでもよい。   The substrate 110 and the sealing substrate 120 are joined together by a sealing material 140. The sealing material 140 is formed on the periphery of the substrate 110 and the sealing substrate 120 and may include an inorganic material such as glass frit or an organic material such as epoxy. A getter 145 may be formed inside the sealing material 140. The getter 145 performs a function of adsorbing moisture or oxygen entering through the sealing material 140, and may include CaO, BaO, MgO, and the like having excellent reactivity with moisture or oxygen.

ゲッター１４５の内側における基板１１０と封止基板１２０との間の空間は充填剤１３０によって満たされる。充填剤１３０は、基板１１０と封止基板１２０との間の空間を満たすことにより、有機発光表示装置１００の器具強度を高める機能をする。つまり、充填剤１３０を含む有機発光表示装置１００は、落下のような外部衝撃に対する耐久性が向上する。充填剤１３０は透明な等方性物質であってもよく、透明なシリコーン系高分子を含んでもよい。   The space between the substrate 110 and the sealing substrate 120 inside the getter 145 is filled with the filler 130. The filler 130 functions to increase the instrument strength of the organic light emitting display device 100 by filling a space between the substrate 110 and the sealing substrate 120. That is, the organic light emitting display device 100 including the filler 130 has improved durability against external impact such as dropping. The filler 130 may be a transparent isotropic substance or may contain a transparent silicone polymer.

バッファー層１１１、ゲート絶縁膜１１２、及び層間絶縁膜１１３は基板１１０と同様のサイズに形成されてもよく、平坦化膜１１４は、その周縁がゲッター１４５と重なるように、平面上で層間絶縁膜１１３より小さく形成されてもよい。そして画素定義膜１１５の端部は、平面上で表示領域ＤＡの周縁と充填剤１３０の周縁との間に位置してもよい。画素定義膜１１５の周縁はゲッター１４５から一定の距離をもって離隔する。   The buffer layer 111, the gate insulating film 112, and the interlayer insulating film 113 may be formed in the same size as the substrate 110, and the planarizing film 114 has an interlayer insulating film on a plane so that the periphery thereof overlaps the getter 145. It may be formed smaller than 113. The end portion of the pixel definition film 115 may be positioned between the periphery of the display area DA and the periphery of the filler 130 on a plane. The periphery of the pixel defining film 115 is separated from the getter 145 by a certain distance.

画素定義膜１１５のうち、表示領域ＤＡに形成された部分の表面は共通電極１５７によって覆われ、非表示領域ＮＤＡに形成された部分の表面は第１保護層１６１によって覆われる。第１保護層１６１は画素定義膜１１５の上面及び側面の両方を覆う。そして第２保護層１６２は第１保護層１６１と接触し、画素定義膜１１５の外側に形成される。   Of the pixel definition film 115, the surface of the part formed in the display area DA is covered with the common electrode 157, and the surface of the part formed in the non-display area NDA is covered with the first protective layer 161. The first protective layer 161 covers both the upper surface and the side surface of the pixel defining film 115. The second protective layer 162 is in contact with the first protective layer 161 and is formed outside the pixel definition film 115.

第１保護層１６１及び第２保護層１６２はいずれも非表示領域ＮＤＡに形成され、充填剤１３０の物質が拡散しない金属、無機物、または有機物を含んでもよい。   The first protective layer 161 and the second protective layer 162 are both formed in the non-display area NDA, and may include a metal, an inorganic substance, or an organic substance that does not diffuse the filler 130.

第１保護層１６１は共通電極１５７と同様の物質で形成されてもよい。第１保護層１６１は共通電極１５７と接触し、共通電極１５７と一体に形成されてもよい。例えば、共通電極１５７の蒸着時に使用するオープンマスクの開口部のサイズを拡大させれば、共通電極１５７及び第１保護層１６１を同時に形成することができる。   The first protective layer 161 may be formed of the same material as the common electrode 157. The first protective layer 161 may be in contact with the common electrode 157 and formed integrally with the common electrode 157. For example, the common electrode 157 and the first protective layer 161 can be formed simultaneously by increasing the size of the opening of the open mask used when the common electrode 157 is deposited.

第２保護層１６２は、画素定義膜１１５の外側で平坦化膜１１４と充填剤１３０との間に形成される。第２保護層１６２の両端部は画素定義膜１１５及びゲッター１４５と重なってもよい。つまり、第２保護層１６２は、画素定義膜１１５と重なる一端部、充填剤１３０と重なる中央部、及びゲッター１４５と重なる他端部を含んでもよい。   The second protective layer 162 is formed between the planarization film 114 and the filler 130 outside the pixel definition film 115. Both end portions of the second protective layer 162 may overlap with the pixel definition film 115 and the getter 145. That is, the second protective layer 162 may include one end portion that overlaps the pixel definition film 115, a central portion that overlaps the filler 130, and the other end portion that overlaps the getter 145.

第２保護層１６２は、画素電極１５５と同様の物質で形成されてもよく、画素電極１５５と同時に形成されてもよい。例えば、画素電極１５５の蒸着時に使用する蒸着マスクに開口部を追加すれば、画素電極１５５及び第２保護層１６２を同時に形成することができる。したがって第２保護層１６２を形成するための別途の蒸着マスクが必要なく、第２保護層１６２を形成するための製造段階が追加されない。   The second protective layer 162 may be formed of the same material as the pixel electrode 155 or may be formed at the same time as the pixel electrode 155. For example, the pixel electrode 155 and the second protective layer 162 can be formed at the same time by adding an opening to a vapor deposition mask used for vapor deposition of the pixel electrode 155. Therefore, a separate vapor deposition mask for forming the second protective layer 162 is not required, and a manufacturing step for forming the second protective layer 162 is not added.

画素電極１５５が半透明膜で形成される場合、第２保護層１６２は、第１透明膜１６２１、金属薄膜１６２２、及び第２透明膜１６２３の積層膜、例えばＩＴＯ／Ａｇ／ＩＴＯの多層膜で形成されてもよい。第１透明膜１６２１は平坦化膜１１４との接着力に優れ、第２透明膜１６２３は充填剤１３０に対する接着力に優れている。したがって第２保護層１６２は、平坦化膜１１４と充填剤１３０との間で浮き上がりや剥離のような不良がなく、堅固に形成されることができる。   When the pixel electrode 155 is formed of a semi-transparent film, the second protective layer 162 is a laminated film of the first transparent film 1621, the metal thin film 1622, and the second transparent film 1623, for example, a multilayer film of ITO / Ag / ITO. It may be formed. The first transparent film 1621 has an excellent adhesive force with the planarizing film 114, and the second transparent film 1623 has an excellent adhesive force with respect to the filler 130. Therefore, the second protective layer 162 can be firmly formed without any defects such as lifting or peeling between the planarizing film 114 and the filler 130.

上述した構成により、充填剤１３０は、非表示領域ＮＤＡで第１保護層及び第２保護層１６１、１６２と接触し、画素定義膜１１５及び平坦化膜１１４と接触しない。画素定義膜１１５、平坦化膜１１４、及び充填剤１３０は全てシリコーン系高分子で形成されてもよいが、充填剤１３０が同じ系の高分子を含む画素定義膜１１５及び平坦化膜１１４と接触すれば、物質の拡散が容易に起こる。   With the above-described configuration, the filler 130 contacts the first protective layer 161 and the second protective layer 161 and 162 in the non-display area NDA, and does not contact the pixel definition film 115 and the planarization film 114. The pixel definition film 115, the planarization film 114, and the filler 130 may all be formed of a silicone polymer, but the filler 130 is in contact with the pixel definition film 115 and the planarization film 114 including the same polymer. Then, the diffusion of the substance occurs easily.

具体的に、画素定義膜１１５がゲッター１４５と接触するように、充填剤１３０より広く形成されることを仮定すれば、非表示領域ＮＤＡで共通電極１５７によって覆われない画素定義膜１１５の表面は充填剤１３０と接触する。また、図２の構造で第２保護層１６２がないことを仮定すれば、充填剤１３０は平坦化膜１１４と接触する。   Specifically, assuming that the pixel definition film 115 is formed wider than the filler 130 so as to be in contact with the getter 145, the surface of the pixel definition film 115 that is not covered by the common electrode 157 in the non-display area NDA is Contact with filler 130. Further, assuming that the second protective layer 162 is not present in the structure of FIG. 2, the filler 130 contacts the planarization film 114.

この場合、充填剤１３０に含まれている各種不純物または酸素などは画素定義膜１１５及び平坦化膜１１４に容易に拡散する。そして、画素定義膜１１５及び平坦化膜１１４に拡散した不純物または酸素などは有機発光ダイオードＯＬＥＤに侵入して、有機発光ダイオードＯＬＥＤを劣化させ、画素収縮のような不良を誘発する。   In this case, various impurities or oxygen contained in the filler 130 are easily diffused into the pixel definition film 115 and the planarization film 114. Impurities or oxygen diffused in the pixel definition film 115 and the planarization film 114 enter the organic light emitting diode OLED, degrade the organic light emitting diode OLED, and induce defects such as pixel contraction.

しかし、第１実施形態の有機発光表示装置１００においては、第１保護層１６１及び第２保護層１６２によって画素定義膜１１５及び平坦化膜１１４が充填剤１３０と接触しないので、充填剤１３０から画素定義膜１１５及び平坦化膜１１４に向かう物質の拡散を遮断することができる。したがって、第１実施形態の有機発光表示装置１００は、充填剤１３０による有機発光ダイオードＯＬＥＤの劣化及び画素収縮などの不良発生を抑制することができる。   However, in the organic light emitting display device 100 of the first embodiment, the pixel defining film 115 and the planarizing film 114 are not in contact with the filler 130 by the first protective layer 161 and the second protective layer 162, so The diffusion of the material toward the definition film 115 and the planarization film 114 can be blocked. Therefore, the organic light emitting display device 100 according to the first embodiment can suppress the occurrence of defects such as deterioration of the organic light emitting diode OLED and pixel contraction due to the filler 130.

一方、非表示領域ＮＤＡには複数の画素ＰＸに電気信号を供給するための配線１７０が位置してもよい。配線１７０は、ゲート絶縁膜１１２の上に形成された第１金属層１７１、及び層間絶縁膜１１３に形成された開口部によって第１金属層１７１と接触する第２金属層１７２を含んでもよい。第１金属層１７１はゲート電極１５２と同様の物質で形成され、第２金属層１７２はソース電極１５３及びドレイン電極１５４と同様の物質で形成されてもよい。   On the other hand, a wiring 170 for supplying an electric signal to the plurality of pixels PX may be located in the non-display area NDA. The wiring 170 may include a first metal layer 171 formed on the gate insulating film 112 and a second metal layer 172 that contacts the first metal layer 171 through an opening formed in the interlayer insulating film 113. The first metal layer 171 may be formed of the same material as the gate electrode 152, and the second metal layer 172 may be formed of the same material as the source electrode 153 and the drain electrode 154.

第２金属層１７２は、ゲッター１４５と重なる領域で層間絶縁膜１１３の上に突出した端部１７２ａを含んでもよい。そして、ゲッター１４５の内側で平坦化膜１１４の周縁の上に第３保護層１６３が形成されてもよい。第３保護層１６３は、第２金属層１７２の突出した端部１７２ａによる第２金属層１７２及び平坦化膜１１４の浮き上がりまたは剥離などのような不良を防止する。第３保護層１６３は、画素定義膜１１５と同様の物質で画素定義膜１１５と同時に形成されてもよい。   The second metal layer 172 may include an end 172 a that protrudes above the interlayer insulating film 113 in a region overlapping the getter 145. A third protective layer 163 may be formed on the periphery of the planarization film 114 inside the getter 145. The third protective layer 163 prevents defects such as lifting or peeling of the second metal layer 172 and the planarization film 114 due to the protruding end 172a of the second metal layer 172. The third protective layer 163 may be formed simultaneously with the pixel definition film 115 using the same material as the pixel definition film 115.

図３は、図１のＩＩＩ−ＩＩＩ線に沿った有機発光表示装置の部分拡大断面図である。   3 is a partial enlarged cross-sectional view of the organic light emitting display device taken along line III-III in FIG.

図３を参照すると、非表示領域ＮＤＡのうち配線と重ならない部分において、必要に応じて平坦化膜１１４に開口部１１４ａが形成されてもよい。平坦化膜１１４の開口部１１４ａによって層間絶縁膜１１３の表面が露出するが、開口部１１４ａを取り囲む平坦化膜１１４の側壁と、露出した層間絶縁膜１１３との上に第２保護層１６２が形成される。   Referring to FIG. 3, an opening 114 a may be formed in the planarization film 114 as necessary in a portion of the non-display area NDA that does not overlap with the wiring. The surface of the interlayer insulating film 113 is exposed by the opening 114 a of the planarizing film 114, but the second protective layer 162 is formed on the side wall of the planarizing film 114 surrounding the opening 114 a and the exposed interlayer insulating film 113. Is done.

画素電極１５５と同様の物質で形成される第２保護層１６２は、層間絶縁膜１１３及び充填剤１３０との接着力に優れている。したがって、平坦化膜１１４の開口部１１４ａによって露出した層間絶縁膜１１３部位の浮き上がりや剥離のような不良を抑制することができる。   The second protective layer 162 formed of the same material as the pixel electrode 155 is excellent in adhesive strength with the interlayer insulating film 113 and the filler 130. Accordingly, it is possible to suppress defects such as lifting and peeling of the portion of the interlayer insulating film 113 exposed by the opening 114a of the planarizing film 114.

図４は、本発明の第２実施形態による有機発光表示装置の部分拡大断面図である。   FIG. 4 is a partial enlarged cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention.

図４を参照すると、第２実施形態の有機発光表示装置２００は、共通電極１５７の上に形成されたキャッピング層１５８を含み、第１保護層１６１ａはキャッピング層１５８と同様の物質で形成される。第１保護層１６１ａはキャッピング層１５８と接し、キャッピング層１５８と一体に形成されてもよい。   Referring to FIG. 4, the OLED display 200 according to the second embodiment includes a capping layer 158 formed on the common electrode 157, and the first protective layer 161 a is formed of the same material as the capping layer 158. . The first protective layer 161 a may be in contact with the capping layer 158 and may be formed integrally with the capping layer 158.

キャッピング層１５８は有機発光ダイオードＯＬＥＤを保護し、有機発光表示装置２００が前面発光型である場合、屈折率マッチングを通じて光効率を最適化する機能をする。キャッピング層１５８は、Ａｌｑ３（ｔｒｉｓ（８−ｈｙｄｒｏｘｙｑｕｉｎｏｌｉｎｅ）ａｌｕｍｉｎｕｍ）、α−ＮＰＤ（Ｎ，Ｎ'−ｂｉｓ−（ｎａｐｈｔｈａｌｅｎｅ−１−ｙｌ）−Ｎ，Ｎ'−ｂｉｓ（ｐｈｅｎｙｌ）ｂｅｎｚｉｄｉｎｅ）、ＮＰＢ（Ｎ，Ｎ'−Ｂｉｓ−（１−ｎａｐｈｔｈｙｌ）−Ｎ，Ｎ'−Ｄｉｐｈｅｎｙｌ−１，１'−Ｂｉｐｈｅｎｙｌ−４−４'−Ｄｉａｍｉｎｅ）、またはＣｕＰｃ（Ｃｏｐｐｅｒ Ｐｈｔｈａｌｏｃｙａｎｉｎｅ）等の有機物を含んでもよい。   The capping layer 158 protects the organic light emitting diode OLED and functions to optimize light efficiency through refractive index matching when the organic light emitting display device 200 is a front light emitting type. The capping layer 158 includes Alq3 (tris (8-hydroxyquinoline) aluminum), α-NPD (N, N′-bis- (naphthalene-1-yl) -N, N′-bis (phenyl) benzidine), NPB (N , N′-Bis- (1-naphthyl) -N, N′-Diphenyl-1,1′-Biphenyl-4-4′-Diamine), or CuPc (Copper Phthalocyanine).

第２実施形態の有機発光表示装置２００において、キャッピング層１５８及び第１保護層１６１ａを除いたそれ以外の構成は、上述した第１実施形態と同一である。   In the organic light emitting display device 200 of the second embodiment, the configuration other than the capping layer 158 and the first protective layer 161a is the same as that of the first embodiment described above.

図５は、本発明の第３実施形態による有機発光表示装置の部分拡大断面図である。   FIG. 5 is a partial enlarged cross-sectional view of an organic light emitting display device according to a third embodiment of the present invention.

図５を参照すると、第３実施形態の有機発光表示装置３００は、共通電極１５７の上に形成されたキャッピング層１５８を含み、第１保護層１６１ｂと第２保護層１６２ｂはキャッピング層１５８と同様の物質で形成される。第１保護層１６１ｂはキャッピング層１５８と接し、キャッピング層１５８と一体に形成されてもよく、第２保護層１６２ｂは、第１保護層１６１ｂと接し、第１保護層１６１ｂと一体に形成されてもよい。つまり、キャッピング層１５８、第１保護層１６１ｂ、及び第２保護層１６２ｂは単一膜で構成されてもよい。   Referring to FIG. 5, the organic light emitting display 300 according to the third embodiment includes a capping layer 158 formed on the common electrode 157, and the first protective layer 161 b and the second protective layer 162 b are the same as the capping layer 158. Formed of the material. The first protective layer 161b may be in contact with the capping layer 158 and formed integrally with the capping layer 158. The second protective layer 162b is in contact with the first protective layer 161b and formed integrally with the first protective layer 161b. Also good. That is, the capping layer 158, the first protective layer 161b, and the second protective layer 162b may be configured as a single film.

第３実施形態の有機発光表示装置３００において、キャッピング層１５８、第１保護層１６１ｂ、及び第２保護層１６２ｂを除いたそれ以外の構成は、上述した第１実施形態と同一である。   In the organic light emitting display device 300 according to the third embodiment, the configuration other than the capping layer 158, the first protective layer 161b, and the second protective layer 162b is the same as that of the first embodiment described above.

以上、本発明の好ましい実施形態について説明したが、本発明はこれに限定されず、特許請求の範囲、発明の詳細な説明、及び添付した図面の範囲内で多様に変形して実施することが可能であり、これも本発明の範囲に属するのは当然である。   The preferred embodiments of the present invention have been described above. However, the present invention is not limited thereto, and various modifications can be made within the scope of the claims, the detailed description of the invention, and the attached drawings. Of course, this is also within the scope of the present invention.

１００、２００、３００ 有機発光表示装置
１１０ 基板
１１１ バッファー層
１１２ ゲート絶縁膜
１１３ 層間絶縁膜
１１４ 平坦化膜
１１５ 画素定義膜
１２０ 封止基板
１３０ 充填剤
１４０ シール材
１４５ ゲッター
１５５ 画素電極
１５６ 発光層
１５７ 共通電極
１５８ キャッピング層
１６１、１６１ａ、１６１ｂ 第１保護層
１６２、１６２ｂ 第２保護層
１６３ 第３保護層 100, 200, 300 Organic light emitting display device 110 Substrate 111 Buffer layer 112 Gate insulating film 113 Interlayer insulating film 114 Planarizing film 115 Pixel definition film 120 Sealing substrate 130 Filler 140 Sealing material 145 Getter 155 Pixel electrode 156 Light emitting layer 157 Common Electrode 158 Capping layer 161, 161a, 161b First protective layer 162, 162b Second protective layer 163 Third protective layer

Claims (10)

表示領域に形成された有機発光ダイオードと、
前記表示領域に形成された第１部分、及び前記表示領域を取り囲む非表示領域に形成された第２部分を含む画素定義膜と、
前記画素定義膜の少なくとも前記第２部分を覆う第１保護層と、
前記非表示領域に形成されて、前記第１保護層の一部及び前記画素定義膜の前記第２部分の一部と接触する第２保護層と、
前記第１保護層及び前記第２保護層を覆う充填剤と、
を含む、有機発光表示装置。 An organic light emitting diode formed in the display area;
A pixel definition film including a first portion formed in the display region and a second portion formed in a non-display region surrounding the display region;
A first protective layer covering at least the second portion of the pixel defining film;
A second protective layer formed in the non-display area and in contact with a part of the first protective layer and a part of the second part of the pixel definition film;
A filler covering the first protective layer and the second protective layer;
An organic light emitting display device. 前記画素定義膜及び前記第２保護層の下に形成された平坦化膜をさらに含み、前記第２保護層は前記画素定義膜の外側で前記平坦化膜の表面を全て覆う、請求項１に記載の有機発光表示装置。   The planarization film further formed under the pixel definition film and the second protection layer, wherein the second protection layer covers the entire surface of the planarization film outside the pixel definition film. The organic light-emitting display device described. 前記画素定義膜及び前記平坦化膜はシリコーン系高分子を含む、請求項２に記載の有機発光表示装置。   The organic light emitting display device according to claim 2, wherein the pixel defining film and the planarizing film include a silicone-based polymer. 前記平坦化膜は、開口部を形成して前記平坦化膜の下の層間絶縁膜を露出させ、前記第２保護層は露出した前記層間絶縁膜を覆う、請求項２に記載の有機発光表示装置。   The organic light emitting display according to claim 2, wherein the planarizing film forms an opening to expose an interlayer insulating film under the planarizing film, and the second protective layer covers the exposed interlayer insulating film. apparatus. 前記有機発光ダイオードは画素電極、発光層、及び共通電極を含み、キャッピング層によって覆われる、請求項１に記載の有機発光表示装置。   The organic light emitting display device of claim 1, wherein the organic light emitting diode includes a pixel electrode, a light emitting layer, and a common electrode, and is covered with a capping layer. 前記第１保護層は前記共通電極と接触し、前記共通電極と同様の物質で形成され、
前記第２保護層は前記第１保護層と接触し、前記画素電極と同様の物質で形成される、請求項５に記載の有機発光表示装置。 The first protective layer is in contact with the common electrode and is formed of the same material as the common electrode,
The organic light emitting display device according to claim 5, wherein the second protective layer is in contact with the first protective layer and is formed of the same material as the pixel electrode. 前記第１保護層は前記キャッピング層と接触し、前記キャッピング層と同様の物質で形成され、
前記第２保護層は前記第１保護層と接触し、前記画素電極と同様の物質で形成される、請求項５に記載の有機発光表示装置。 The first protective layer is in contact with the capping layer and is formed of the same material as the capping layer;
The organic light emitting display device according to claim 5, wherein the second protective layer is in contact with the first protective layer and is formed of the same material as the pixel electrode. 前記第２保護層は、第１透明膜、金属薄膜、及び第２透明膜の多層膜で形成される、請求項６または７に記載の有機発光表示装置。   The organic light emitting display device according to claim 6, wherein the second protective layer is formed of a multilayer film including a first transparent film, a metal thin film, and a second transparent film. 前記第１保護層は前記キャッピング層と接触し、前記キャッピング層と同様の物質で形成され、前記第２保護層は前記第１保護層と接触し、前記キャッピング層と同様の物質で形成される、請求項５に記載の有機発光表示装置。   The first protective layer is in contact with the capping layer and formed of the same material as the capping layer, and the second protective layer is in contact with the first protective layer and formed of the same material as the capping layer. The organic light emitting display device according to claim 5. 前記第１保護層及び第２保護層は互いに異なる層に形成される、請求項１に記載の有機発光表示装置。   The organic light emitting display device according to claim 1, wherein the first protective layer and the second protective layer are formed in different layers.
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