JP2012099503A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a structure capable of ensuring excellent display performance by preventing the occurrence of, for example, point defect and capable of improving long-term reliability, in a display device using an organic light-emitting element.SOLUTION: The distance between an organic light-emitting element 106 and a sealing substrate 101 is controlled by the top edge of a bank 107 provided in a pixel portion 120 and the top edge of an insulating film 108 provided in a driving circuit portion. A gap is provided between the organic light-emitting element and the sealing substrate to prevent a damage of the organic light-emitting element. Additionally, since an element substrate and the sealing substrate can be adjacent to each other as close as possible, moisture infiltration from the side surfaces of a display device can be kept low.

Description

The present invention relates to a display device using an organic light emitting element and a manufacturing method thereof, and more particularly to a structure for sealing an organic light emitting element.

In recent years, display devices using organic light-emitting elements have been studied. A display device in which a pixel portion is formed of an organic light emitting element is a self-luminous type and does not require a light source such as a backlight unlike a liquid crystal display device. For this reason, it is considered promising as a means for realizing a lighter and thinner display device, and is expected to be used for a mobile phone, a personal digital assistant (PDA) for personal use, and the like.

An organic light-emitting device has a diode structure in which an organic compound layer is sandwiched between two electrodes, and holes are injected from one electrode and electrons are injected from the other electrode, whereby an organic compound layer A light emitter that emits light by combining electrons and holes inside. An organic light emitting diode (OLED) is mentioned as an organic light emitting element.

The cross-sectional view of FIG. 12 is a conventional active matrix display device using an organic light emitting element. The substrates 500 and 511 are translucent. A substrate having an organic light emitting element is referred to as an element substrate. The organic light emitting element 513 includes a pixel electrode 503, an organic compound layer 504, and a counter electrode 505. The pixel electrode of the organic light emitting element is formed in contact with the upper surface of the interlayer insulating film 502 and the side surface of the contact hole that penetrates the interlayer insulating film and reaches the control circuit 501. TFT (Thin Film Tr
The control circuit 501 including an anistor (thin film transistor) applies a voltage corresponding to the output of the drive circuit to the pixel TFT 503 and a switching TFT that switches between conduction and non-conduction according to the output of the drive circuit. A current control TFT for passing a current between the electrode and the electrode; The intensity of light emitted from the organic compound layer 504 depends on the amount of current flowing between the pixel electrode and the counter electrode.

The sealing substrate 512 is provided to face the element substrate, and is bonded using a sealant 506. If the pixel electrode is light-reflective and the counter electrode is light-transmitting, the emitted light is visible through the light-transmitting sealing substrate in the upper direction of the cross-sectional view. Since light emitted from the organic light-emitting element can be extracted from the opposite side of the TFT, high-luminance and high-definition display can be realized regardless of the aperture ratio of the pixel.

For color display, a color filter and a white light emitting diode can be combined. In this case, the sealing substrate has a color filter, and the sealing substrate and the element substrate are bonded together using a sealing material. There is also a structure in which the white diode is bonded so as to contact the color filter. The sealing substrate includes a substrate 511, a color filter, and a light shielding portion 507. The color filter may be formed in contact with the white light emitting diode. The color filter includes a first spectral filter 508, a second spectral filter 509, and a third spectral filter 510. Each spectral filter transmits one of red, blue, and green light, and performs color display using the three primary colors of additive color mixture. A light shielding part 507 is provided in the gap between the spectral filters to block light. This structure is described in, for example, JP-A-12-173766.

As described above, in a display device using an organic light emitting element, development has been advanced in order to realize high quality image quality by increasing brightness or color. However, since the organic compound layer is formed by a vapor deposition method, it is difficult for the film to grow on the protruding portion or the side surface of the pixel electrode due to the wiring of the TFT or the like. When the organic compound layer is disconnected at the protruding portion or the like, the pixel electrode and the counter electrode are short-circuited at the disconnected portion, and a non-light emitting pixel in which an electric field is not applied to the organic light emitting layer is formed.

Therefore, a structure called a bank has been proposed. In order to prevent point defects due to the pixel not emitting light, an insulating film is provided so as to cover the protruding portion due to the TFT and the peripheral edge of the pixel electrode, and then along the upper surface of the insulating film and the gentle side surface of the insulating film. A structure in which an organic compound layer and a counter electrode are provided has been proposed.
No. 787. The bank also has an overhang shape in which the upper end of the bank protrudes from the lower end of the bank. Such a structure is disclosed in, for example, Japanese Patent Laid-Open No. 8-31.
No. 5981 and JP-A-9-102393.

However, in order to manufacture a display device using an organic light emitting element, there is a problem that must be further solved.

For example, in the configuration in which the sealing substrate and the organic light emitting element are in contact with each other, if there is a foreign matter or scratch having high hardness on the sealing substrate, the organic light emitting element may be disconnected due to the foreign matter or the like. Then, the counter electrode and the pixel electrode are short-circuited through the organic compound film to generate a non-light emitting pixel, which leads to a decrease in yield.

The foreign matter that is likely to cause disconnection is hard among the dust that could not be removed even by cleaning the sealing substrate, and the dust that was mixed during the manufacture of the color filter. In addition, in the manufacturing process of the element substrate, dust existing inside the apparatus or in the surrounding environment may be mixed into the organic light emitting element.

The disconnection is likely to occur when the sealing material between the element substrate and the sealing substrate is cured and the two substrates are bonded together. At the time of bonding, a strong pressure is applied perpendicularly to the substrate surface. Therefore, if there is a hard dust on the organic light emitting element, a strong force is locally applied and the organic light emitting element is disconnected.
Further, when a force parallel to the substrate surface is applied during bonding, the organic light emitting device is damaged by shear stress if there is a hard protrusion like protrusion. Therefore, it is conceivable to prevent disconnection due to dust by providing a gap so that the organic light emitting element and the sealing substrate do not contact each other.

However, when the interval between the organic light emitting element and the sealing substrate is widened, moisture and oxygen easily enter from the side surface of the display device. Since the front and back surfaces of the display device are made of a glass made of an inorganic material or a substrate made of a metal, water vapor and oxygen permeability are low, and moisture and oxygen hardly enter from the front and back surfaces of the display device. However, a sealing material made of an organic resin is provided on the side surface of the display device between the substrates. Since the sealing material has high moisture permeability, the amount of moisture that passes through the sealing material and enters the sealed space cannot be ignored. For this reason, it is better to make the thickness of the side surface of the display device excluding the thickness of the substrate as small as possible.

In the organic light emitting device, the cathode is oxidized by moisture, or a dark spot (non-light emitting pixel) is generated due to peeling between the organic compound layer and the cathode, and the display quality is remarkably deteriorated. The dark spot is a progressive defect and is said to proceed without operating the organic light emitting device. This is because the cathode is made of AlLi, MgAg, etc., and the alkali metal contained in the cathode,
This is because alkaline earth metals have high reactivity to moisture.

In addition, when a sealing substrate is provided with a gap above the organic light emitting element, there is no one that controls the distance between the organic light emitting element and the sealing substrate, so that this gap becomes non-uniform in the display region. Then, in a display device that extracts light emitted from the organic light emitting element from the sealing substrate side, stripe-like unevenness due to interference is generated, and visibility is deteriorated.

That is, when the organic light emitting element and the sealing substrate are in contact with each other, there is a problem in that the organic light emitting element is disconnected due to the hard protrusion-like foreign matter and the yield is reduced. However, when the organic light emitting element and the sealing substrate are separated from each other, there is a problem in that moisture entering from the side surface increases and deterioration of the organic light emitting element easily proceeds. In addition, in the configuration in which light emitted from the organic light emitting element is extracted from the sealing substrate side, there is a problem that unevenness in brightness due to interference occurs when the organic light emitting element and the sealing substrate are separated from each other.

Accordingly, it is an object of the present invention to provide a display device and a manufacturing method thereof that can improve yield and prevent deterioration of an organic light emitting element. Further, in a display device configured to extract light emitted from the organic light emitting element from the sealing substrate side, not only the yield is improved, but also the deterioration of the organic light emitting element is prevented and the luminance uniformity is improved. It is an object of the present invention to provide a display device having a structure and a manufacturing method thereof.

In the present invention, the element substrate includes a pixel electrode, a bank covering an end portion of the pixel electrode, an organic compound layer, and a counter electrode. Here, the organic compound layer and the counter electrode are provided only along the side surface of the bank surface, and are not formed at the upper end of the bank. The sealing substrate is provided in contact with the upper end of the bank.
The element substrate and the sealing substrate are bonded together with a sealing material.

First, when the organic light emitting device and the sealing substrate are separated by a bank, even if there is hard dust on the sealing substrate, the dust does not contact the organic light emitting device, and damage to the organic light emitting device is suppressed. , Improve the yield. In addition, even when a strong pressure is applied to the element substrate and the front surface of the sealing substrate at the time of bonding, the spacing between the organic light emitting element and the sealing substrate is maintained in a bank formed with high density in the pixel portion. Protruding foreign substances on the substrate or the sealing substrate do not come into contact with the organic light emitting element.

In addition, since the distance between the organic light emitting device and the sealing substrate is kept uniform by the bank, the intensity of the interference light is constant for the light reflected and interfered at the interface between the sealing substrate and the organic light emitting device. ,
The displayed image is more uniform in luminance.

Further, since the interval between the element substrate and the counter substrate is held by the bank, the thickness of the side surface of the display device excluding the thickness of the substrate can be kept thin. For this reason, the deterioration reaction of the organic light emitting element caused by moisture entering from the side surface of the display device is prevented.

In the present invention, an insulating film may be formed simultaneously with the bank, and this insulating film may be provided between the sealing material and the pixel portion. The insulating film is brought into contact with the sealing substrate at the upper end. That is, the upper end of the bank and the upper end of the insulating film are in contact with the sealing substrate. The distance between the organic light emitting element and the sealing substrate is more uniform by being controlled by combining the bank and the insulating film.

Of course, a protective film may be provided so as to cover the organic light emitting element and the bank to protect the organic light emitting element from moisture. In this case, the sealing substrate is provided in contact with the protective film formed on the upper end of the bank. The protective film may be formed by stacking a plurality of thin films.

When the sealing material is provided at the upper end of the bank or the upper end of the insulating film formed in the same process as the bank, only the portion where the sealing material is provided has a local gap between the upper end of the bank or the insulating film and the sealing substrate. As a result, the spacing between the sealing substrate and the organic light emitting element becomes non-uniform in the pixel portion. Therefore, the sealing material is arranged so as not to reach the upper end of the bank.

Here, if an insulating film formed in the same process as the bank is provided only on a predetermined pattern, the uniformity of the interval between the sealing substrate and the organic light emitting element can be further improved. The predetermined pattern will be described below.

In a configuration in which wirings and electrodes are formed in a fine pattern like a pixel portion and a drive circuit portion, unevenness due to the thickness of the wirings and electrodes can be flattened by providing an organic resin film on the wirings and electrodes. . The degree of planarization depends on the thickness of the organic resin film, the thickness of the wiring, and the electrode. For example, even if the unevenness due to the thickness of the wiring and the electrode is several hundred nm, after the organic resin film is applied, The thickness of the unevenness on the surface of the organic resin film is less than half that.

However, in the configuration in which the wiring and the electrode are formed with a wide width such as the terminal portion, unevenness due to the thickness of the wiring and the electrode is hardly flattened even when an organic resin film is applied on the wiring and the electrode.
For example, a difference in height substantially corresponding to the thickness of the wiring and electrode can be made between the surface of the organic resin film on the wiring and electrode and the surface of the organic resin film around the wiring and electrode.

The degree of planarization depends on the thickness of the organic resin film, the wiring, and the thickness of the electrode. However, the width of the wiring and the electrode is 50 μm or less as in the pixel portion and the drive circuit portion, and a fine pattern pixel is used in the pixel portion. If the width of the wiring and the electrode is as small as 10 μm or less, the thickness of the wiring and the electrode is easily flattened as compared with the terminal portion.

The cross-sectional view of FIG. 11A shows the distribution of film thickness when an organic resin film is applied. There are a source electrode 116, a drain electrode 117, and wirings 124 and 125 as conductor films. Wiring 124,
Reference numeral 125 denotes a terminal for inputting an external signal, and 100 μm to 100 in order to reduce the wiring resistance.
There is a width of about 0 μm. When an organic resin film is applied so as to cover these wirings and electrodes, the upper portions of the wirings 124 and 125 are not flattened, and the upper end of the organic resin film formed on the terminal portion 122 and the like is connected to the pixel portion 121 and the drive circuit. It becomes higher than the part 120. In order to make the distance between the organic light emitting element and the sealing substrate uniform, it is preferable to remove the organic resin film on the wirings 124 to 125 as shown in the cross-sectional view of FIG. The upper ends of the organic resin films 127 and 128 after the removal are almost the same height.

An example of the wiring of the pixel portion is shown in the top view of FIG. 6, and the width of the wiring will be described. Take the power supply wiring 420 as an example. The power supply wiring has a wiring width 438 of 1 to 10 μm.
The width of the wiring means the distance from end to end of the wiring. The wider the width of the wiring, the lower the wiring resistance.
Note that the length of the wiring refers to a distance through which a signal is transmitted in the drawn wiring, and the wiring resistance increases as the wiring length increases.

Note that the film serving as the bank preferably has a thickness of 1.5 μm to 10 μm.
When the film is thin, the organic light emitting element may be damaged when the thickness of the foreign matter on the sealing substrate is thick in the cross-sectional direction. And since the difference in the optical path length of the light reflected by the interface of a sealing substrate and the interface of an organic light emitting element is small, the coloring which the specific wavelength of visible light strengthens by interference tends to arise. When it is thick, when a protective film or the like is formed on the bank, the coverage is poor and uniform coating becomes difficult.

The display device of the present invention has the following configuration.
In a display device having an element substrate having an organic light emitting element, a sealing substrate provided facing the element substrate, and a sealing material for bonding the element substrate and the sealing substrate, a bank is provided in the element substrate And the upper end of the bank and the upper end of the sealing material are in contact with the sealing substrate.

In a display device having an element substrate having an organic light emitting element, a sealing substrate provided opposite to the element substrate, and a sealing material for bonding the element substrate and the sealing substrate, the element substrate includes a bank, A display device comprising an insulating film provided in the same process as the bank, wherein an upper end of the bank, an upper end of the insulating film, and an upper end of the sealing material are in contact with the sealing substrate.

In each of the above structures, the lower end of the sealing material is in contact with a film formed in the same process as the film stacked under the bank.

Alternatively, in a display device including an element substrate having an organic light-emitting element, a sealing substrate provided opposite to the element substrate, and a sealing material for bonding the element substrate and the sealing substrate, the element substrate includes a bank and a bank And a protective film formed to cover at least the upper end of the bank, and the protective film provided on the upper end of the bank and the upper end of the sealing material are sealing substrates. A display device which is in contact with

In a display device having an element substrate having an organic light emitting element, a sealing substrate provided opposite to the element substrate, and a sealing material for bonding the element substrate and the sealing substrate, the element substrate includes a bank, And an insulating film provided in the same process as the bank, and a protective film formed to cover at least the upper end of the bank and the upper end of the insulating film, and the protective film provided on the upper end of the bank; The display device, wherein the protective film provided on the upper end of the insulating film and the upper end of the sealing material are in contact with a sealing substrate.

In the configuration having a protective film among the respective configurations, the protective film is sandwiched between a film formed in the same process as a film stacked under the bank and a lower end of the sealing material, Display device.

The display device according to any one of the above-mentioned structures, wherein when there is a conductor film in contact with the lower end of the bank and the lower end of the insulating film, the width of the conductor film is 50 μm or less.

In the configuration having a protective film among the respective configurations, the element substrate is provided with a pixel electrode, the bank provided so as to cover an end portion of the pixel electrode, and the side surface of the surface of the bank on the pixel electrode. A display device comprising: an organic compound layer; and a counter electrode on the organic compound layer and in contact with a side surface of the surface of the bank.

The display device according to claim 1, wherein the pixel electrode is made of a light-reflective material, and the counter electrode is made of a light-transmitting material.

The display device according to any one of the above structures, wherein a space surrounded by the element substrate, the first sealing substrate, and the sealing material is in a vacuum state.

In the configuration having a protective film among the respective configurations, the protective film includes a plurality of films.

In each of the above structures, the surface of the sealing substrate that faces the element substrate has a spectral filter, and the organic compound layer is below the spectral filter.

The manufacturing method of the display device of the present invention can be summarized as follows.
The organic light emitting element is provided with a pixel electrode, a counter electrode, and an organic compound layer sandwiched between the pixel electrode and the counter electrode, and an element substrate having the organic light emitting element, and the element substrate. In a method for manufacturing a display device in which a sealing substrate provided is bonded using a sealant,
A first step of forming a bank covering the edge of the pixel electrode; a second step of forming the organic compound layer on the pixel electrode; and a third step of forming the counter electrode on the organic compound layer. And a fourth step of providing a sealing material at a position corresponding to the peripheral edge of the sealing substrate, and a fifth step of bonding the sealing substrate in contact with the upper end of the bank and curing the sealing material. A method for manufacturing a display device.

In the above structure, an insulating film is formed simultaneously with the bank in the first step, and the sealing substrate is bonded to the upper end of the bank and the upper end of the insulating film in the fifth step. A method for manufacturing a display device.

In each of the above configurations, a protective film is provided on at least the bank and the counter electrode between the third step and the fourth step. In the fifth step, the protective film is provided at least on the upper end of the bank. A method for manufacturing a display device, wherein the protective film is in contact with the sealing substrate.

The display device according to claim 14 or 15, wherein the bank and the insulating film are provided in a region where the width of the conductor film is 50 μm or less. Manufacturing method.

According to the present invention including the display device having the above-described configuration and the manufacturing method thereof, in the display device using the organic light-emitting element, it is possible to prevent deterioration of the organic light-emitting element and improve the yield.

In addition, according to the present invention comprising the display device having the above-described configuration and the method for manufacturing the display device, the light emitted from the organic light-emitting element is extracted from the sealing substrate side, and high-luminance and high-definition display is performed. At the same time, it is possible to prevent the deterioration of the organic light emitting element, improve the yield, increase the uniformity of luminance, and obtain good display performance.

The present invention configured as described above will be described in detail by the following embodiments and examples. Embodiments and examples can be used in appropriate combinations.

By controlling the distance between the element substrate and the sealing substrate by a bank provided in the pixel portion and an insulating film formed in the same process as the bank, water vapor that enters from the side surface of the display device while keeping the distance between the substrates narrow. Deterioration of the organic light-emitting element due to.

Further, since the upper end of the bank or the like is in contact with the sealing substrate, there is a sealing substrate with a gap above the organic light emitting element. Therefore, it is possible to prevent the organic light emitting element from being disconnected by foreign matters on protrusions such as dust on the sealing substrate, and defects such as point defects can be reduced and the yield can be increased.

Further, in a display device that extracts light emitted from an organic light emitting element from the sealing substrate side, the organic light emitting element and the sealing substrate are provided by a bank provided in the pixel portion or an insulating film formed in the same process as the bank. Can be kept uniform, interference fringes can be prevented, and good display performance with high uniformity of contrast and brightness can be ensured.

Furthermore, in a display device in which a color filter is provided on a sealing substrate to perform color display, the organic light emitting element can be prevented from being disconnected by a foreign substance contained in the color filter in the color filter manufacturing process.

Sectional drawing of the display apparatus using the organic light emitting element of Embodiment 1. FIG. Sectional drawing of the display apparatus using the organic light emitting element of Embodiment 2. FIG. Sectional drawing of the display apparatus using the organic light emitting element of Embodiment 3. FIG. Sectional drawing of the display apparatus using the organic light emitting element of Embodiment 4. FIG. FIG. 2 is a top view illustrating an appearance of a display device using the organic light emitting element according to the first embodiment. 1 is a cross-sectional view of an active matrix substrate of Example 1. FIG. 2 is a top view of a pixel portion according to Embodiment 1. FIG. 2 is an equivalent circuit of a pixel portion according to the first embodiment. FIG. 6 is a perspective view illustrating an example of an electronic device according to a second embodiment. FIG. 6 is a perspective view illustrating an example of an electronic device according to a second embodiment. Sectional drawing which shows film thickness distribution when apply | coating an organic resin film. Sectional drawing of the display apparatus using the conventional organic light emitting element.

[Embodiment 1]
In the present embodiment, a configuration in which the interval between substrates is controlled by a bank of a pixel portion or an insulating film provided in the same process as the bank is shown. This insulating film is provided only on the drive circuit portion.

FIG. 1 is a cross-sectional view of an active matrix display device using an organic light emitting element. The components of the display device of FIG. 1 will be described sequentially.

As the substrate 100, a substrate made of glass such as barium borosilicate glass or aluminoborosilicate glass represented by Corning # 7059 glass or # 1737 glass is used. Alternatively, a quartz substrate, a silicon substrate, or a stainless steel substrate with an insulating film formed on the surface thereof may be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of the present embodiment may be used.

As the base film, an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film can be used. In this embodiment, a two-layer structure is used as the base film, but a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used. In this embodiment, the base film 118 is a silicon oxynitride film having a thickness of 10 nm to 100 nm. The base film 119 has a thickness of 20n.
A silicon oxide film of m to 200 nm is formed.

A silicon film having a thickness of 10 to 150 nm is formed as the semiconductor film 110, and a nitride film having a thickness of 20 to 300 nm is formed as the gate insulating film 111. As the gate electrodes 112 to 113, a tantalum nitride film having a thickness of 30 to 60 nm is formed on the first conductor film, and a film thickness of 370 to 4 is formed on the second conductor film.
A 00 nm tungsten film is formed. A second conductor film is stacked on the first conductor film.
A silicon oxynitride film with a thickness of 50 nm to 150 nm is formed as the first interlayer insulating film 114. An acrylic resin film having a thickness of 1 to 3 μm is formed as the second interlayer insulating film 115.

As the first interlayer insulating film 114, not only a silicon oxynitride film but also a silicon nitride film can be used instead of the silicon oxynitride film. The silicon nitride film or the silicon oxynitride film suppresses the deterioration of the electrical characteristics of the TFT due to the elution of alkaline components such as Li and Mg contained in the cathode of the organic light emitting element described later.

The drain electrode 117 and the source electrode 116 have a stacked structure including a titanium film with a thickness of 50 nm to 800 nm, an aluminum alloy film with a thickness of 350 to 400 nm, and a titanium film with a thickness of 100 nm to 1600 nm. For the aluminum alloy film, a material in which aluminum is the main component and silicon is added as an impurity element is used. In this embodiment, a structure in which three conductor films are stacked as a drain electrode and a source electrode is used, but a structure in which a single layer or two layers are stacked may be used. The conductor film 123 and the wirings 124 and 125 are formed of the same layer as the drain electrode and the source electrode. Thus, TFTs are formed in the pixel portion and the drive circuit portion.

The pixel electrode 103 is formed by an evaporation method using a material containing magnesium (Mg), lithium (Li), or calcium (Ca) having a low work function. Preferably MgAg
An electrode made of (a material in which Mg and Ag are mixed at Mg: Ag = 10: 1) may be used. Other examples include MgAgAl electrodes, LiAl electrodes, and LiFAl electrodes. In this embodiment, the pixel electrode is formed as a cathode using a material such as MgAg or LiF. The thickness of the pixel electrode is in the range of 100 nm to 200 nm. The pixel electrode is formed so as to partially overlap the source electrode 116.

The bank 107 is formed using an organic resin film such as an acrylic resin film or a polyimide resin film so as to cover the TFT wiring. The organic resin film is used with a thickness of 1.5 to 10 μm. Insulating film 1
08 is formed in the same process as the bank. The insulating film 108 covers the TFT of the drive circuit, and T
Protect the FT from external impact.

The organic compound layer 104 is formed by a vapor deposition method along the gentle inclined surface of the bank. The bank serves as a partition wall for preventing color mixing by separating the deposited material for each pixel when the light emitting layer emitting light of each color of red, blue, and green is deposited. Further, by covering the projecting portion due to the electrode and wiring with a bank, disconnection of the organic compound layer is prevented, and as a result, a short circuit between the pixel electrode and the counter electrode is prevented.

The organic compound layer is laminated in the order of electron transport layer / light emitting layer / hole transport layer / hole injection layer,
A structure such as an electron transport layer / light-emitting layer / hole transport layer or an electron injection layer / electron transport layer / light-emitting layer / hole transport layer / hole injection layer may be employed. In the present invention, any known structure may be used.

As a specific organic compound layer, cyanopolyphenylene may be used for a light emitting layer emitting red light, polyphenylene vinylene may be used for a light emitting layer emitting green light, and polyphenylene vinylene or polyalkylphenylene may be used for a light emitting layer emitting blue light.
The thickness of the light emitting layer is in the range of 30 to 150 nm.

The above example is an example of a material that can be used for the light emitting layer, and is not limited thereto. The materials for forming the light emitting layer, the hole transport layer, the hole injection layer, the electron transport layer, and the electron injection layer can be freely selected in the possible combinations.

The counter electrode 105 is formed by sputtering an ITO (Indium Tin Oxide) film. The thickness of the counter electrode is in the range of 100 nm to 200 nm.
The counter electrode is formed in contact with the side surfaces of the banks adjacent to each other. Although not shown in the figure, the counter electrode is short-circuited outside the display unit to be a common electrode.

The protective film 109 is a silicon nitride film, a silicon oxynitride film, or DLC (Diamond Like Carbon).
) A membrane is preferably used. Since light emission is extracted through the protective film, it is necessary to select a material and a film thickness of the protective film so that high transmittance can be obtained in the visible light region. The energy band of an insulator includes a valence band, a forbidden band, and a conduction band, and light absorption is caused by the transition of electrons from the valence band to the conduction band. For this reason, the light absorption edge is obtained from the energy width of the forbidden band, that is, the band gap, and the correlation with the visible light transmittance can be found. Band gap is
The silicon nitride film is 5 eV, the silicon oxynitride film is in the range of 5 eV to 8 eV depending on the film quality, and the DLC film is 3 eV. When calculated using the speed of light and Planck's constant, the absorption edge of light is 248 nm for the silicon nitride film, 155 nm to 248 nm for the silicon oxynitride film, D
The LC film becomes 413 nm. That is, the silicon nitride film and the silicon oxynitride film do not absorb light in the visible light region. The DLC film absorbs purple light in the visible light region and turns brown. In the present embodiment, the DLC film is used to protect the organic light emitting element from moisture. However, the thickness of the DLC film is 1
The thickness is reduced to 00 nm to 200 nm to suppress absorption of short-wavelength light in visible light.

In the present embodiment, the substrate having the above configuration is referred to as an element substrate. In the above-described element substrate, a configuration in which an organic compound film and a counter electrode are stacked on the pixel electrode is shown. You may form between an electrode and an organic compound or between a counter electrode and an organic compound film | membrane. Pixel electrode is AlLi, Mg
Since the cathode is made of Ag, a thin film made of an insulating material provided on the pixel electrode functions as a protective film that protects the cathode from moisture and oxygen.

As the sealing substrate 101, a substrate made of glass such as barium borosilicate glass or alumino borosilicate glass represented by Corning # 7059 glass or # 1737 glass is used. Further, a quartz substrate or a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used.

When a glass substrate is used as the sealing substrate, the element substrate may be a glass substrate. If the thermal expansion coefficient of the element substrate and the sealing substrate is the same when the temperature of the environment in which the panel is used changes rapidly, the substrate can be prevented from being damaged by thermal shock. When the substrate is thinned, the mechanical strength of the substrate is lowered, and the substrate is easily damaged by thermal shock. Therefore, it is particularly effective to align the thermal expansion coefficients of the substrate.

As the sealing material 102, an epoxy material is used. As the sealing material, an ultraviolet curable resin can be used, or a thermosetting resin can be used. It is preferable to select a sealing material that can be cured at a temperature lower than the heat resistant temperature of the organic light emitting device. As the sealing material, LIXSON BOND LX-0001 sold by Chisso Corporation may be used. LX-0001 is a two-part epoxy resin. After applying LX-0001 to the peripheral edge of the sealing substrate, the element substrate and the sealing substrate are bonded together, and a pressure perpendicular to the substrate surface is applied to both surfaces of the pair of substrates.
Cure at 2 ° C for 2 hours. The thickness of the sealing material after curing is 0.2 by adjusting the pressure and the coating amount.
The thickness can be from 10 μm to 10 μm. An exhaust port is formed by opening a gap in a part of the sealing material.

Note that the conductor film 123 is used supplementarily to make the thickness of the laminated film under the sealant 102 equal in the region where the sealant is provided and to make the distance between the element substrate and the sealing substrate uniform. The conductor film 123 is provided so as to cover the upper surface and side surfaces of the second interlayer insulating film made of an organic resin film, except for a portion where an external input terminal to be described later is formed.

A panel made of an element substrate and a sealing substrate bonded together with a sealing material is put in a vacuum container, and air is extracted from an exhaust port of the panel to make a vacuum state. Next, in this state, the inside of the panel is kept in a vacuum state, and the exhaust port is sealed. Thus, the inside of the panel is kept in a vacuum state.

The terminal portion 122 is provided with an external input terminal. An FPC (Flexible Print Circuit) is connected to an external input terminal provided at the end of the panel via an anisotropic conductive film. An image data signal, various timing signals, and a power source are input from an external circuit to an external input terminal. An image data signal such as a start pulse and a clock pulse and a timing signal input from an external input terminal are output to a driving circuit.

In the anisotropic conductive film, fine particles coated with a metal such as nickel or carbon are dispersed in a resin film, and electricity flows between the external input terminal and the FPC. Has the property of not passing electricity.

The top view of FIG. 4 shows the appearance of such a display device. FIG. 4 shows a chain line AA ′ and a chain line BB ′.
FIG. 1 shows a cross section taken along the chain line CC ′. A chain line AA ′ is a peripheral portion of the pixel portion or the panel, a chain line BB ′ is a connection structure between the wiring 124 of the external input terminal and the counter electrode 105, and a chain line C-
C ′ shows a connection structure between the TFT of the driving circuit and the wiring 125 of the external input terminal.

The direction in which the light emitted from the organic light-emitting element is emitted varies depending on the configuration of the organic light-emitting element. Here, the pixel electrode is a light-reflective cathode, the counter electrode is a light-transmitting anode, and the sealing substrate is transparent. Light is emitted, and light emitted from the organic light emitting element is emitted to the sealing substrate side.

The pixel portion 120, the drive circuit portions 121a to 121c, and the terminal portion 122 are regions surrounded by dotted lines. Terminal portions are wiring 122 and wiring 124 of external input terminals (wiring 124 is not shown).
Is formed, and the FPC 200 is attached to the external input terminal via the anisotropic conductive film.

The driving circuit unit includes a first scanning side driving circuit unit 120a, a second scanning side driving circuit unit 120b,
There is a signal side drive circuit section 120c. The circuit configuration of the drive circuit unit differs between the scanning side drive circuit unit and the signal side drive circuit unit, but is omitted here. The drive circuit section is configured with a CMOS circuit composed of an n-channel TFT and a p-channel TFT as a basic circuit. Using these TFTs, a shift register, a latch circuit, a buffer circuit and the like are formed. The insulating film 108 is formed so as to cover the TFT of the driver circuit. This insulating film is formed in the same process as the bank.

The banks 107 are provided in a stripe shape in the column direction in the pixel portion. The counter electrode 105 is a common electrode, is provided in a stripe shape along the side surface of the bank, and is short-circuited outside the display area where the bank is not formed.

The sealing space surrounded by the substrates 100 and 101 and the sealing material 102 is kept in a vacuum state so that the moisture and oxygen concentrations in the sealing space are lowered to prevent deterioration of the organic light emitting element, for example, generation of dark spots. Be drunk.

If the sealed space is kept in a vacuum state, a strong pressure is applied to both substrates from the outside air due to the difference in pressure between the atmospheric pressure and the vacuum pressure. However, since the interval between the organic light emitting element and the sealing substrate is held by a bank formed at a high density in the pixel portion, the sealing substrate can be prevented from coming into contact with the organic light emitting element and damaging the organic light emitting element. .

The insulating film 108 of the driving circuit portion is formed of a flexible organic resin film with a wide area, and thus acts as a buffer material that disperses pressure and prevents damage to the TFT when mechanical shock is applied from the outside. In addition, by using the insulating film 108 together with the bank, the gap between the organic light emitting element and the sealing substrate is made uniform, and serves as a gap control material that prevents the occurrence of interference fringes in the pixel portion.

[Embodiment 2]
In this embodiment, a display device in which a sealing substrate has a color filter and performs color display by combining a color filter and a white light emitting diode will be described.

FIG. 2 shows a cross section of a display device using an organic light emitting element. Parts having the same functions as those in FIG. A description will be given centering on differences from FIG. A white light emitting diode is used as the organic light emitting element. In order to emit white light, a ZnBTZ complex is used for the light emitting layer of the organic compound film, or an aromatic diamine (TPD) \ 1,2,4-triazole derivative (p-E) is used.
A laminate of tTAZ) \ Alq (where Alq means that it is partially doped with Neil Red, which is a red luminescent dye), is used.

The element substrate having the organic light-emitting element 106 and the sealing substrate 130 are bonded using the sealant 102. The sealing substrate 130 includes a light-transmitting substrate 129, a color filter on the substrate 129, and a planarization film 128 that covers the color filter. The color filter includes a first spectral filter, a second spectral filter, and a third spectral filter. For example, the first spectral filter is a filter that selectively transmits red, the second spectral filter is a filter that selectively transmits green, and the third spectral filter is a filter that selectively transmits blue. . The planarizing film 128 planarizes the overlap or gap between adjacent spectral filters.

Each spectral filter is provided for each pixel. For example, the first spectral filter 126 is provided above the organic light emitting element. A color filter, for example, a second spectral filter 127 is provided in a region inside the portion where the sealant is provided and in a region outside the pixel portion. Since the insulating film 108 and the sealing substrate 130 are in contact with each other over a wide area, the uniformity of the distance between the organic light emitting element and the sealing substrate can be improved.

Sealing the element substrate and the sealing substrate in an inert gas such as argon or helium or a nitrogen atmosphere protects the organic light emitting element from moisture and oxygen, and oxidizes the cathode and peels off the cathode and the organic compound layer. Can be suppressed. An inert gas that is sufficiently dried is used.

The distance between the color filter, for example, the first spectral filter 126 and the organic light emitting element 106 is
It is determined by the film thickness of the bank. Since the bank has a film thickness of 1.5 to 10 μm, the color filter and the organic light-emitting element can be provided close to 10 μm or less. Since the color filter and the illuminant are close to each other, it is possible to prevent a color shift associated with a change in the viewing angle of the user and to obtain a clear display.

[Embodiment 3]
This embodiment shows an example in which a desiccant is dispersed in a sealing material.

This embodiment will be described with reference to the cross-sectional view of FIG. Parts having the same functions as those in FIG. Only differences from FIG. 2 will be described. The sealing material 102 has a desiccant 1311 inside. The desiccant has a particle size of 1.0 μm or less, preferably 0.2 μm or less, and is finely pulverized. As the desiccant, calcium oxide, barium oxide, or the like can be used. A syringe is filled with a mixture of a sealing material and a desiccant. A gas pressure of a predetermined value is applied from the upper end of the syringe by a known dispenser method, and a sealing material and a desiccant are discharged from a thin nozzle at the lower end of the syringe to form the sealing material on the peripheral edge of the sealing substrate 130.

Since the desiccant is filled in the sealing material to provide moisture absorption and moisture proofing, the planarizing film 127 on the color filter removes the portion where the sealing material is provided, and the sealing material occupies the side of the display device. Increase the rate.

Further, the sealed space is filled with an insulating material having a refractive index close to that of the sealing substrate, for example, insulating oil. When the difference in refractive index between the sealing substrate and insulating oil or the like is small, surface reflection is reduced, and the utilization efficiency of light emitted from the organic light emitting element can be improved. In order to increase the long-term reliability of the organic light-emitting element, it is preferable that the insulating oil is sufficiently defoamed and dehydrated to prevent mixing of oxygen and moisture.

In addition, a well-known technique can be used for the method of filling the sealed space with insulating oil. For example, a panel composed of an element substrate and a sealing substrate bonded together with a sealing material and a container filled with insulating oil are placed in a vacuum container, and the gap between the element substrate and the sealing substrate is discharged from the exhaust port of the panel. Vent the air to create a vacuum. Next, in this state, the exhaust port of the panel is immersed in this insulating oil to return the inside of the vacuum vessel to atmospheric pressure. As a result, atmospheric pressure is applied to the surface of the insulating oil, and the insulating oil is injected into the gap between the element substrate and the sealing substrate in a vacuum state. Next, the exhaust port is sealed in this state.

Water vapor entering from the outside air by the desiccant can be captured before entering the sealed space, moisture-proof,
Hygroscopicity is improved, and the lifetime of the organic light emitting device can be extended.

[Embodiment 4]
The present invention may be applied to a display device that extracts light emitted from an organic light emitting element from the element substrate side. FIG. 4 shows an active matrix type display device using an organic light emitting element, which is configured to extract light emitted from the organic light emitting element from the element substrate side. The emitted light is emitted downward in the sectional view. In FIG. 4, parts having the same functions as those in FIG. Differences from the first embodiment will be described below.

Base films 118 and 119, semiconductor film 110, gate insulating film 111, gate electrode 112, 1
13. The film thickness and materials of the first interlayer insulating film 114 and the second interlayer insulating film 115 are the same as those in the first embodiment.

A contact hole that penetrates the second interlayer insulating film 115 and reaches the semiconductor film 110 is formed. The source electrode 1 is in contact with the side wall of the contact hole and the surface of the second interlayer insulating film.
16 and the drain electrode 117 are formed. The wirings 124 to 125 and the conductor film 123 are formed simultaneously with the source electrode and the drain electrode.

Next, the pixel electrode 103 is provided to overlap the end portion of the drain electrode 117. In this example,
As the transparent electrode, an ITO film or a transparent conductive film in which indium oxide is mixed with 2 to 20% zinc oxide (ZnO) is used. The transparent conductive film is used as a hole injection electrode, that is, an anode.

Next, using a polyimide resin film having a thickness of 3.0 μm, the bank 107 and the drive circuit T
An insulating film 108 covering the FT is provided. Next, the organic compound layer 104 and the counter electrode 105 are formed by an evaporation method. At this time, before the organic compound layer 104 is formed, it is preferable to perform heat treatment on the pixel electrode 103 to completely remove moisture. In this embodiment, the counter electrode of the organic light emitting element is used as a cathode and an AlLi electrode is used. However, other known materials may be used.
Note that the organic compound layer 104 is formed by stacking a plurality of layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer in addition to the light emitting layer.

An organic light emitting element is formed on the substrate 100 as described above. In this embodiment, since the lower electrode is a light-transmitting anode, the light generated in the organic compound layer is on the lower surface (substrate 100).
To be emitted.

By providing the protective film 109, the organic compound layer 104 and the counter electrode (cathode) 105 can be protected from moisture and oxygen. In this embodiment, a 300 nm thick silicon nitride film is provided as the protective film 109. The protective film 109 may be formed continuously after the cathode is formed without being released to the atmosphere.

Next, the sealing material 102 is provided on the peripheral edge of the sealing substrate, and the sealing substrate and the element substrate are bonded to each other. As the sealing substrate, a substrate made of glass such as barium borosilicate glass or aluminoborosilicate glass represented by Corning # 7059 glass or # 1737 glass is used. As the sealing substrate, a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed may be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of the present embodiment may be used.

According to this embodiment, since the element substrate and the sealing substrate can be provided close to each other, the intrusion of moisture from the side surface of the display device can be reduced. Moreover, even if the element substrate and the sealing substrate are provided close to each other, disconnection of the organic light emitting element due to foreign matters such as dust on the sealing substrate can be prevented, and occurrence of point defects can be prevented.

The present invention can be applied to any display device using an organic light emitting element. FIG. 6 shows an example thereof, which shows an example of an active matrix display device manufactured using TFTs.
The TFT of the embodiment may be distinguished from the amorphous silicon TFT and the polysilicon TFT depending on the material of the semiconductor film forming the channel formation region, but the present invention can be applied to either of them.

As the substrate 401, a substrate made of glass such as quartz, barium borosilicate glass typified by Corning # 7059 glass or # 1737 glass, or aluminoborosilicate glass is used.

Next, a base film 402 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is provided. For example, a silicon oxynitride film 402a formed from SiH ₄ , NH ₃ , and N ₂ O by a plasma CVD method is 10 to 200 nm (preferably 50 to 100 nm).
) And a silicon oxynitride film 402b made of SiH ₄ and N ₂ O in the same manner as described above.
The layers are stacked to a thickness of 00 nm (preferably 100 to 150 nm). In this embodiment, the base film 4
Although 02 is shown as a two-layer structure, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be formed.

Next, island-like semiconductor layers 403 to 407, a gate insulating film 408, and gate electrodes 409 to 41
2 is formed. The island-like semiconductor films 403 to 407 have a thickness of 10 to 150 nm, the gate insulating film has a thickness of 50 to 200 nm, and the gate electrode has a thickness of 50 to 800 nm.

Next, an interlayer insulating film 413 is formed. For example, SiH ₄ , NH ₃ ,
A silicon oxynitride film made of N ₂ O is used as the first interlayer insulating film 413a, and 10 to 20
It is formed to 0 nm (preferably 50 to 100 nm). It is also possible to form an oxynitride film as the first interlayer insulating film. Further, the second interlayer insulating film 413b made of an organic resin film is changed to 0.5.
10 μm (preferably 1 to 3 μm) is formed. As the second interlayer insulating film, an acrylic resin film, a polyimide resin film, or the like can be preferably used. The second interlayer insulating film is an island-shaped semiconductor film 40.
3 to 407 and a thickness sufficient to flatten the unevenness caused by the gate electrodes 409 to 412.

Further, a silicon oxynitride film formed from SiH ₄ , NH ₃ , and N ₂ O by plasma CVD is formed as a first protective film 437 c with a thickness of 10 to 200 nm (preferably 50 to 100 nm).
The first protective film prevents alkaline components such as Li and Mg contained in the cathode of the organic light emitting element described later from eluting, and deterioration of the electrical characteristics of the TFT. In this embodiment, the first protective film is formed of a silicon oxynitride film, but a silicon oxide film may be used instead of the silicon oxynitride film.

Next, patterning for forming contact holes reaching the surfaces of the island-shaped semiconductor films 403 to 407 is performed.

In the driver circuit portion 435, source wirings 414 to 415 connected to the source regions of the island-shaped semiconductor films 403 to 404 and drain wirings 416 to 417 connected to the drain regions are used.
And form. Note that these wirings are formed by patterning a laminated film of a Ti film having a thickness of 50 nm and an alloy film (alloy film of Al and Ti) having a thickness of 500 nm.

In the pixel portion, a data wiring 418, a drain side wiring 419, a power supply wiring 420, and a drain side electrode 421 are formed. A data wiring 418 is connected to the drain of the switching TFT 428, and a source-side wiring 419 is connected to the source. The source-side wiring 419 is connected to the gate electrode 411 of the current control TFT 430. Current control TFT 43
The power supply wiring 420 is connected to the drain 6 and the source-side electrode 421 is connected to the source. The counter electrode and the source-side electrode 421 are connected.

As described above, the driver circuit portion including the n-channel TFT 429 and the p-channel TFT 430, the switching TFT 431, the reset TFT 432, the storage capacitor 433,
The pixel portion having the current control TFT 434 can be formed over the same substrate.

Next, a counter electrode 423 of the organic light emitting element is formed. The counter electrode is a cathode, and a light reflective material such as MgAg or LiF is used. The thickness of the cathode is 100 nm to 200 nm. Next, a bank 422 is formed in the pixel portion 436 from an acrylic resin film having a thickness of 1.5 to 10 μm. At the same time as forming the bank, an insulating film 428 is formed in the driver circuit portion.

Next, an organic compound layer 424 of the organic light emitting element is formed. The organic compound layer is used in a single layer or a stacked structure, but the light emission efficiency is better when used in a stacked structure. Generally, the hole injection layer / hole transport layer / light emitting layer / electron transport layer are formed on the anode in this order, but the hole transport layer / light emitting layer / electron transport layer, or hole injection layer / hole are formed. A structure such as a transport layer / a light emitting layer / an electron transport layer / an electron injection layer may be used. In the present invention, any known structure may be used.

In this embodiment, color display is performed by depositing three types of light emitting layers corresponding to RGB. As a specific light emitting layer, cyanopolyphenylene may be used for a light emitting layer that emits red light, polyphenylene vinylene may be used for a light emitting layer that emits green light, and polyphenylene vinylene or polyalkylphenylene may be used for a light emitting layer that emits blue light. The thickness of the light emitting layer is 30-150n
m may be used. The above example is an example of an organic compound that can be used as the light emitting layer.
It is not limited to this.

Note that the organic compound shown in this example includes a light-emitting layer and PEDOT (polythiophene).
Or it is set as the structure which laminated | stacked the positive hole injection layer which consists of PAni (polyaniline).

Next, a pixel electrode 425 made of ITO (indium tin oxide) is formed. I
TO has a high work function of 4.5 to 5.0 eV, and can efficiently inject holes into the organic light emitting layer. ITO becomes the anode. As described above, an organic light emitting element including a cathode formed using a material such as MgAg or LiF, an organic compound in which a light emitting layer and a hole transport layer are stacked, and an anode formed of ITO is provided. Note that by using a transparent electrode for the anode, light can be emitted in a direction indicated by an arrow in FIG.

Next, a DLC film is formed as the second protective film 438 to prevent water vapor, oxygen, or the like from entering from the seal portion to deteriorate the organic light emitting element. When the DLC film is formed, a portion of the terminal portion where the FPC is provided is covered in advance using a mask.

FIG. 7 is a top view of the pixel portion shown in the cross-sectional view of FIG. Elements common to FIG. 6 are denoted by the same reference numerals. Moreover, in FIG. 7, the cross section cut | disconnected by the chain line GG 'and the chain line HH' line is shown in FIG. A bank is provided outside the area surrounded by the dotted line in FIG. In addition, a light emitting layer that emits light emission colors corresponding to red, green, and blue pixels and an anode are provided inside a region surrounded by a dotted line.

FIG. 8 shows an equivalent circuit of such a pixel portion, and elements common to FIG. 5 are denoted by the same reference numerals. The switching TFT 431 has a multi-gate structure, and the current control TFT 4
11 is provided with an LDD overlapping the gate electrode. T using polysilicon
Since FT exhibits a high operation speed, it is easy to cause deterioration such as hot carrier injection. Therefore, it is highly reliable to form TFTs with different structures (switching TFTs with sufficiently low off-state current and TFTs for current control strong against hot carrier injection) having different structures depending on functions in the pixels, and This is very effective in manufacturing a display device capable of displaying a good image (high operation performance).

In this embodiment, an n-channel TFT is used as the current control TFT 434 and the current control TF is used.
The cathode (pixel electrode) of the organic light emitting device is connected to the source of T. Thus, anode (counter electrode)
By controlling the current to flow from the cathode side to the cathode side, the electrons injected from the cathode and the holes injected from the anode are combined in the light emitting layer, and the organic light emitting device emits light. Current control T
In the configuration in which the anode is connected to the FT, the current control TFT is a p-channel type, the anode of the organic light emitting element is connected to the drain of the current control TFT, and the current is controlled to flow from the anode to the cathode.

Note that the bank may adopt an overhang configuration in which the upper end of the bank in the vicinity of the sealing substrate protrudes from the lower end of the bank in contact with the second interlayer insulating film. Even in this configuration, the bank prevents the contact between the organic light emitting element and the sealing substrate, the effect of keeping the distance between the organic light emitting element and the sealing substrate constant in the pixel portion, and the element substrate and the sealing substrate are close to each other. The effect which can be provided can be acquired.

A light-emitting device formed by implementing the present invention is incorporated in various electric appliances, and a pixel portion is used as an image display portion. Examples of the electronic apparatus of the present invention include a mobile phone, a PDA, an electronic book, a video camera, a notebook personal computer, and an image reproducing apparatus including a recording medium, such as a DV
Examples include D (Digital Versatile Disc) players and digital cameras. Specific examples of these electronic devices are shown in FIGS.

FIG. 9A illustrates a mobile phone, which includes a display panel 9001, an operation panel 9002, and a connection portion 9003. The display panel 9001 includes a display device 9004, an audio output portion 9005,
An antenna 9009 and the like are provided. The operation panel 9002 is provided with operation keys 9006, a power switch 9007, a voice input unit 9008, and the like. The present invention provides a display device 90.
04 can be applied.

FIG. 9B illustrates a mobile computer or a portable information terminal, which includes a main body 9201, a camera portion 9202, an image receiving portion 9203, an operation switch 9204, and a display device 9205. The present invention can be applied to the display device 9205. Such electronic devices include 3
A display device of inch to 5 inch class is used. By using the display device of the present invention, the weight of the portable information terminal can be reduced.

FIG. 9C illustrates a portable book, which includes a main body 9301, display devices 9202 to 9303, a storage medium 9304, operation switches 9305, and an antenna 9306, and data stored in a minidisc (MD) or DVD, The data received by the antenna is displayed. The present invention can be used for the display devices 9302 to 9303. A portable book uses a 4-inch to 12-inch class display device, but by using the display device of the present invention, the portable book can be reduced in weight and thickness.

FIG. 9D illustrates a video camera, which includes a main body 9401, a display device 9402, and an audio input portion 94.
03, an operation switch 9404, a battery 9405, an image receiving unit 9406, and the like. The present invention can be applied to the display device 9402.

FIG. 10A illustrates a personal computer, which includes a main body 9601, an image input portion 9602,
A display device 9603 and a keyboard 9604 are included. The present invention can be applied to the display device 9603.

FIG. 10B shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded. The main body 9701, the display device 9702, the speaker unit 9703, and the recording medium 970 are shown.
4 and operation switch 9705. Note that this device uses a DVD (Digi) as a recording medium.
tal Versatile Disc), CDs, etc., music appreciation, movie appreciation, games and the Internet can be performed. The present invention can be applied to the display device 9702.

FIG. 10C illustrates a digital camera, which includes a main body 9801, a display device 9802, and an eyepiece unit 98.
03, an operation switch 9804, and an image receiving unit (not shown). The present invention provides a display device 9
802 can be applied.

The display device of the present invention is used for the mobile phone shown in FIG. 9A, the mobile computer or portable information terminal shown in FIG. 9B, the portable book shown in FIG. 9C, and the personal computer shown in FIG. By displaying a black background in the mode, the power consumption of the device can be suppressed.

Further, in the cellular phone operation shown in FIG. 9A, the power consumption can be reduced by decreasing the luminance when using the operation keys and increasing the luminance when the operation switch is used. Further, the power consumption can be reduced by increasing the brightness of the display device when an incoming call is received and decreasing the brightness during a call. Further, in the case of continuous use, it is possible to reduce power consumption by providing a function that turns off display by time control unless resetting. Note that these may be manual control.

Although not shown here, the present invention can also be applied to a display device incorporated in a navigation system, a refrigerator, a washing machine, a microwave oven, a fixed telephone, a facsimile, and the like. Thus, the application range of the present invention is very wide and can be applied to various products.

Claims (2)

A thin film transistor above the first substrate;
An insulating film above the thin film transistor;
A light emitting device above the insulating film;
An external input terminal,
A second substrate bonded to the first substrate via a sealing material;
A semiconductor device comprising:
The insulating film, the first conductive film, and the second conductive film are provided below the sealing material,
The first conductive film electrically connects the external input terminal and the thin film transistor,
The second conductive film is formed of the same material as the first conductive film,
The semiconductor device, wherein the second conductive film covers a side surface of the insulating film. In claim 3,
The semiconductor device is characterized in that light from the light emitting element is emitted to the second substrate side.

Images