JP2016174328A5 - - Google Patents
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- JP2016174328A5 JP2016174328A5 JP2015054404A JP2015054404A JP2016174328A5 JP 2016174328 A5 JP2016174328 A5 JP 2016174328A5 JP 2015054404 A JP2015054404 A JP 2015054404A JP 2015054404 A JP2015054404 A JP 2015054404A JP 2016174328 A5 JP2016174328 A5 JP 2016174328A5
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- JP
- Japan
- Prior art keywords
- axis
- outer edge
- wafer
- region
- vibration
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 230000001681 protective effect Effects 0.000 claims 3
- 239000010453 quartz Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 230000003287 optical effect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 1
Claims (5)
ウェーハをエッチングして、前記薄肉部に対応する領域を形成すると共に、前記振動素子の外形に対応する領域を前記薄肉部の深さ分だけ同時にハーフエッチングする第１エッチング工程と、
前記ハーフエッチングされた外形に対応する領域をエッチングして個片の前記振動素子の外形を形成する第２エッチング工程と、
を含むことを特徴とするウェーハの製造方法。 A plurality of vibration elements including a thin part and a thick part that is integrated with the outer edge except for a part of the outer edge of the thin part and is thicker than the thin part are connected to the frame. A wafer manufacturing method comprising:
Etching a wafer to form a region corresponding to the thin-walled portion, and simultaneously half-etching the region corresponding to the outer shape of the vibration element by the depth of the thin-walled portion; and
Etching a region corresponding to the half-etched outer shape to form the outer shape of the piece of the vibration element; and
A method for producing a wafer, comprising:
前記第１領域の外縁に一体化され、前記第１領域よりも厚さが厚い第２領域と、
を含み、
前記第１領域の前記外縁は、
前記厚み滑り振動の振動方向と直交する方向に沿った一方の第１外縁及び他方の第１外縁と、
前記振動方向に沿った一方の第２外縁及び他方の第２外縁と、
を含み、
前記第２領域は、
前記一方の第１外縁に沿って配置された第１厚肉部と、
前記一方の第２外縁に沿って配置された第２厚肉部と、
前記第１厚肉部の前記直交する方向における前記一方の第２外縁側の端部と、前記第２厚肉部の前記振動方向における前記一方の第１外縁側の端部とに連結している第３厚肉部と、
を含む第１の振動素子および第２の振動素子が、前記直交する方向に沿って並んでいるウェーハの製造方法であって、
ウェーハを準備する準備工程と、
前記ウェーハの表面に保護膜を塗布する保護膜塗布工程と、
前記振動方向に沿った長さが前記振動素子の前記振動方向に沿った長さ以上である第１の開口と、前記第１領域に対応する第２の開口と、を含む開口部が、前記直交する方向に沿って複数並んでいるマスクを用いて前記保護膜を露光する露光工程と、
を含み、
前記第１の振動素子の前記第２の振動素子側の外縁と、前記第２の振動素子の前記第１の振動素子側の外縁との間の前記直交する方向に沿った長さをＷとし、
前記ウェーハの厚さをｔとしたとき、
０．０２９＜（Ｗ／ｔ2）＜０．０３３
の関係を満たすことを特徴とするウェーハの製造方法。 A first region including a vibration region of the thickness slip riffs movement,
A second region that is integrated with an outer edge of the first region and is thicker than the first region;
Including
The outer edge of the first region is
One first outer edge and the other first outer edge along a direction orthogonal to the vibration direction of the thickness shear vibration;
One second outer edge and the other second outer edge along the vibration direction;
It includes,
Before Symbol the second region,
A first thick portion disposed along the one first outer edge;
A second thick portion disposed along the one second outer edge;
An end portion of the one of the second outer edge side in the direction the perpendicular of said first thick section, before SL connected to an end portion of the one of the first outer edge in the vibration direction of the second thick portion A third thick part,
First vibration element and a second vibrating element including a is a manufacturing method of a wafer are Nde parallel to front along the Kijika direction orthogonal,
A preparation process for preparing a wafer;
A protective film application step of applying a protective film on the surface of the wafer ;
A first opening length along the front Symbol vibration direction is equal to or larger than the length along the vibration direction of the vibrating element, and a second opening corresponding to the first region, the opening included in a an exposure step of exposing the protective film using a mask are arranged a plurality along the front Kijika direction orthogonal,
Including
The length along the orthogonal direction between the outer edge of the first vibration element on the second vibration element side and the outer edge of the second vibration element on the first vibration element side is defined as W. ,
When the thickness of the wafer is t,
0.029 <(W / t 2 ) <0.033
A wafer manufacturing method characterized by satisfying the relationship:
前記ウェーハは、
水晶の結晶軸である、電気軸としてのＸ軸と、機械軸としてのＹ軸と、光学軸としてのＺ軸と、からなる直交座標系の前記Ｘ軸を回転軸として、前記Ｚ軸を前記Ｙ軸の−Ｙ方向へ＋Ｚ側が回転するように傾けた軸をＺ’軸とし、前記Ｙ軸を前記Ｚ軸の＋Ｚ方向へ＋Ｙ側が回転するように傾けた軸をＹ’軸とし、前記Ｘ軸及び前記Ｚ’軸を含む面を主面とし、前記Ｙ’軸に沿った方向を厚さとする水晶基板であることを特徴とするウェーハの製造方法。 In the manufacturing method of the wafer according to claim 2,
The wafer is
A crystal axis of quartz, an X-axis as an electric axis, a Y-axis as a mechanical axis, and a Z-axis as an optical axis, the X-axis of a Cartesian coordinate system as a rotation axis, and the Z-axis as the rotation axis The axis tilted so that the + Z side rotates in the −Y direction of the Y axis is defined as the Z ′ axis, the axis tilted so that the + Y side rotates in the + Z direction of the Z axis is defined as the Y ′ axis, and the X A method for producing a wafer, comprising: a quartz substrate having a surface including an axis and the Z ′ axis as a main surface and a thickness along a direction along the Y ′ axis.
前記第１領域の外縁に一体化され、前記第１領域よりも厚さが厚い第２領域と、
を含み、
前記第１領域の前記外縁は、
前記厚み滑り振動の振動方向と直交する方向に沿った一方の第１外縁及び他方の第１外縁と、
前記振動方向に沿った一方の第２外縁及び他方の第２外縁と、
を含み、
前記第２領域は、
前記一方の第１外縁に沿って配置された第１厚肉部と、
前記一方の第２外縁に沿って配置された第２厚肉部と、
前記第１厚肉部の前記直交する方向における前記一方の第２外縁側の端部と、前記第２厚肉部の前記振動方向における前記一方の第１外縁側の端部とに連結している第３厚肉部と、
を含む第１の振動素子および第２の振動素子が、前記直交する方向に沿って並んでいるウェーハであって、
前記第１の振動素子の前記第２の振動素子側の外縁と、前記第２の振動素子の前記第１の振動素子側の外縁との間の前記直交する方向に沿った長さをＷ、
前記ウェーハの厚さをｔ、
としたとき、
０．０２９＜（Ｗ／ｔ2）＜０．０３３
の関係を満たすことを特徴とするウェーハ。 A first region including a vibration region of the thickness slip riffs movement,
A second region that is integrated with an outer edge of the first region and is thicker than the first region;
Including
The outer edge of the first region is
One first outer edge and the other first outer edge along a direction orthogonal to the vibration direction of the thickness shear vibration;
One second outer edge and the other second outer edge along the vibration direction;
It includes,
Before Symbol the second region,
A first thick portion disposed along the one first outer edge;
A second thick portion disposed along the one second outer edge;
An end portion of the one of the second outer edge side in the direction the perpendicular of said first thick section, before SL connected to an end portion of the one of the first outer edge in the vibration direction of the second thick portion A third thick part,
First vibration element and a second vibrating element including a is a wafer which are Nde parallel along before Kijika direction orthogonal,
The length along the orthogonal direction between the outer edge of the first vibrating element on the second vibrating element side and the outer edge of the second vibrating element on the first vibrating element side is W,
The thickness of the wafer is t,
When
0.029 <(W / t 2 ) <0.033
A wafer characterized by satisfying the above relationship.
前記ウェーハは、
水晶の結晶軸である、電気軸としてのＸ軸と、機械軸としてのＹ軸と、光学軸としてのＺ軸と、からなる直交座標系の前記Ｘ軸を回転軸として、前記Ｚ軸を前記Ｙ軸の−Ｙ方向へ＋Ｚ側が回転するように傾けた軸をＺ’軸とし、前記Ｙ軸を前記Ｚ軸の＋Ｚ方向へ＋Ｙ側が回転するように傾けた軸をＹ’軸とし、前記Ｘ軸及び前記Ｚ’軸を含む面を主面とし、前記Ｙ’軸に沿った方向を厚さとする水晶基板であることを特徴とするウェーハ。 The wafer according to claim 4, wherein
The wafer is
A crystal axis of quartz, an X-axis as an electric axis, a Y-axis as a mechanical axis, and a Z-axis as an optical axis, the X-axis of a Cartesian coordinate system as a rotation axis, and the Z-axis as the rotation axis The axis tilted so that the + Z side rotates in the −Y direction of the Y axis is defined as the Z ′ axis, the axis tilted so that the + Y side rotates in the + Z direction of the Z axis is defined as the Y ′ axis, and the X A wafer comprising a crystal substrate having a surface including an axis and the Z ′ axis as a main surface and a thickness along a direction along the Y ′ axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015054404A JP2016174328A (en) | 2015-03-18 | 2015-03-18 | Wafer manufacturing method and wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015054404A JP2016174328A (en) | 2015-03-18 | 2015-03-18 | Wafer manufacturing method and wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016174328A JP2016174328A (en) | 2016-09-29 |
| JP2016174328A5 true JP2016174328A5 (en) | 2018-04-12 |
Family
ID=57008346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015054404A Withdrawn JP2016174328A (en) | 2015-03-18 | 2015-03-18 | Wafer manufacturing method and wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2016174328A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100700150B1 (en) * | 2004-10-06 | 2007-03-29 | 주식회사 미래엔지니어링 | Device for removing nitrogen from wastewater and method for the same |
| CN111074227A (en) * | 2019-11-21 | 2020-04-28 | 南京中电熊猫晶体科技有限公司 | Film coating method for compensating single-side etching asymmetry |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007318350A (en) * | 2006-05-24 | 2007-12-06 | Epson Toyocom Corp | Piezoelectric vibrating reed and manufacturing method thereof |
| JP2010258667A (en) * | 2009-04-23 | 2010-11-11 | Seiko Epson Corp | Electronic component and manufacturing method thereof, and piezoelectric vibrator and manufacturing method thereof |
| JP5910092B2 (en) * | 2012-01-11 | 2016-04-27 | セイコーエプソン株式会社 | Piezoelectric vibration element, piezoelectric vibrator, electronic device, and electronic apparatus |
| JP2013258452A (en) * | 2012-06-11 | 2013-12-26 | Seiko Epson Corp | Vibration element, vibrator, electronic device, electronic apparatus, mobile body, and manufacturing method of vibration element |
| JP5824967B2 (en) * | 2011-08-24 | 2015-12-02 | セイコーエプソン株式会社 | Vibration element, vibrator, electronic device, and electronic apparatus |
| JP2013042440A (en) * | 2011-08-19 | 2013-02-28 | Seiko Epson Corp | Piezoelectric vibrating element, piezoelectric vibrator, electronic device and electronic apparatus |
| JP2013046085A (en) * | 2011-08-22 | 2013-03-04 | Seiko Epson Corp | Piezoelectric vibration element, piezoelectric vibrator, electronic device, and electronic device |
-
2015
- 2015-03-18 JP JP2015054404A patent/JP2016174328A/en not_active Withdrawn
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