JP2016174156A - Lead frame and semiconductor device - Google Patents

Lead frame and semiconductor device Download PDF

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JP2016174156A
JP2016174156A JP2016075874A JP2016075874A JP2016174156A JP 2016174156 A JP2016174156 A JP 2016174156A JP 2016075874 A JP2016075874 A JP 2016075874A JP 2016075874 A JP2016075874 A JP 2016075874A JP 2016174156 A JP2016174156 A JP 2016174156A
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led element
lead
element mounting
inclined surface
light
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JP6128254B2 (en
Inventor
田 和 範 小
Kazunori Oda
田 和 範 小
橋 伸一郎 高
Shinichiro Takahashi
橋 伸一郎 高
崎 和 広 篠
Kazuhiro Shinozaki
崎 和 広 篠
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PROBLEM TO BE SOLVED: To improve extraction efficiency of light from an LED element.SOLUTION: A lead frame 10 comprises: an LED element placement part 11 on which an LED element 21 is placed; and a lead part 12 arranged separately from the LED element placement part 11. The lead frame further comprises an inclined surface 13 formed on an end face among end faces of the lead part 12, the end face facing the LED element placement part 11 or on an end face among end faces of the LED element placement part 11, the end face facing the lead part 12 over total length in a height direction, for reflecting light from above so as to return the light upwardly.SELECTED DRAWING: Figure 3

Description

本発明は、ＬＥＤ素子を載置するために用いられるリードフレーム、及びこのようなリードフレームを備えた半導体装置に関する。   The present invention relates to a lead frame used for mounting an LED element and a semiconductor device including such a lead frame.

従来、ＬＥＤ（Light Emitting Diode：発光ダイオード）素子を光源として用いる照明装置が、各種家電、ＯＡ機器、車両機器の表示灯、一般照明、車載照明、ディスプレイ等に用いられている。このような照明装置の中には、リードフレームとＬＥＤ素子とを有する半導体装置を含むものがある。   DESCRIPTION OF RELATED ART Conventionally, the illuminating device which uses a LED (Light Emitting Diode: Light emitting diode) element as a light source is used for various household appliances, OA apparatus, the indicator lamp of vehicle equipment, general illumination, vehicle-mounted illumination, a display, etc. Some such lighting devices include a semiconductor device having a lead frame and LED elements.

このような半導体装置として、例えば特許文献１には、配線基板上に配置されたＬＥＤ素子載置部材及び配線導体と、ＬＥＤ素子載置部材上に載置され、配線導体とボンディングワイヤによって接続されたＬＥＤ素子と、ＬＥＤ素子載置部材、ＬＥＤ素子、配線導体及びボンディングワイヤを封止する封止樹脂部とを備えたものが開示されている。特許文献１では、ＬＥＤ素子載置部材の中央がＬＥＤ素子載置領域となっており、ＬＥＤ素子載置領域の周縁に位置する周縁領域からＬＥＤ素子載置領域に向かって下方へ落ち込む凹部が形成され、ＬＥＤ素子載置領域及び周縁領域の表面は、ＬＥＤ素子からの光を反射する反射面として機能するようになっている。   As such a semiconductor device, for example, in Patent Document 1, an LED element mounting member and a wiring conductor disposed on a wiring substrate, and an LED element mounting member are mounted and connected to the wiring conductor and a bonding wire. What is provided with the LED element and the sealing resin part which seals an LED element mounting member, an LED element, a wiring conductor, and a bonding wire is disclosed. In Patent Document 1, the center of the LED element mounting member is the LED element mounting area, and a recess is formed that falls downward from the peripheral area located at the periphery of the LED element mounting area toward the LED element mounting area. In addition, the surface of the LED element mounting area and the peripheral area functions as a reflection surface that reflects light from the LED element.

ＬＥＤ素子からの光の一部は封止樹脂部の表面で反射するため、封止樹脂部内では光が散乱（多重反射）する。上述のような従来の半導体装置では、ＬＥＤ素子載置部材と配線導体との間の領域を介して配線基板側へ光が漏れることによる光の損失が生じ、光取り出し効率が低下するという問題があった。   Since a part of the light from the LED element is reflected on the surface of the sealing resin portion, the light is scattered (multiple reflection) in the sealing resin portion. In the conventional semiconductor device as described above, there is a problem that light loss occurs due to light leaking to the wiring board side through the region between the LED element mounting member and the wiring conductor, and the light extraction efficiency is lowered. there were.

特開２０１１−９６９７０号公報JP 2011-96970 A

本発明は、このような点を考慮してなされたものであり、ＬＥＤ素子からの光の取り出し効率を向上させることができるリードフレーム及び半導体装置を提供することを目的とする。   The present invention has been made in consideration of such points, and an object thereof is to provide a lead frame and a semiconductor device that can improve the light extraction efficiency from the LED elements.

本発明の一態様によるリードフレームは、ＬＥＤ素子が載置されるリードフレームであって、前記ＬＥＤ素子が載置されるＬＥＤ素子載置部と、前記ＬＥＤ素子載置部に離間して配置されたリード部と、を備え、前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面、又は前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面に、高さ方向全長にわたって、上方からの光を上方へ戻すよう反射する傾斜面が形成されているものである。   A lead frame according to an aspect of the present invention is a lead frame on which an LED element is placed, and is disposed apart from the LED element placement portion on which the LED element is placed and the LED element placement portion. A lead portion, and an end face facing the LED element placement portion of the end face of the lead portion, or an end face facing the lead portion of the end face of the LED element placement portion. In addition, an inclined surface that reflects light from above to return upward is formed.

本発明の一態様によるリードフレームにおいては、前記傾斜面は、前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面及び前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面の両方に形成されていることが好ましい。   In the lead frame according to one aspect of the present invention, the inclined surface opposes the lead portion of the end surface of the lead portion that faces the LED element placement portion and the end surface of the LED element placement portion. It is preferable to be formed on both end faces.

本発明の一態様によるリードフレームにおいては、前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面に前記傾斜面が形成され、前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面に、前記傾斜面とは逆向きの傾斜となる逆傾斜面が形成されていることが好ましい。   In the lead frame according to an aspect of the present invention, the inclined surface is formed on an end surface of the lead portion that faces the LED element mounting portion, and the lead portion of the end surface of the LED element mounting portion is formed on the lead portion. It is preferable that a reverse inclined surface having an inclination opposite to the inclined surface is formed on the opposing end surfaces.

本発明の一態様によるリードフレームにおいては、前記傾斜面に金属層が形成されていることが好ましい。   In the lead frame according to one aspect of the present invention, it is preferable that a metal layer is formed on the inclined surface.

本発明の一態様による半導体装置は、ＬＥＤ素子載置部と、前記ＬＥＤ素子載置部に載置されたＬＥＤ素子と、前記ＬＥＤ素子載置部に離間して配置されたリード部と、前記ＬＥＤ素子と前記リード部とを電気的に接続する導電部と、前記ＬＥＤ素子載置部、前記ＬＥＤ素子、前記リード部、及び前記導電部を封止する封止樹脂部と、を備え、前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面、又は前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面に、高さ方向全長にわたって、上方からの光を上方へ戻すよう反射する傾斜面が形成されているものである。   A semiconductor device according to an aspect of the present invention includes an LED element placement portion, an LED element placed on the LED element placement portion, a lead portion spaced apart from the LED element placement portion, A conductive portion that electrically connects the LED element and the lead portion; and a sealing resin portion that seals the LED element mounting portion, the LED element, the lead portion, and the conductive portion, Light from above is directed upward over the entire length in the height direction on the end surface of the lead portion facing the LED element mounting portion or on the end surface of the LED element mounting portion facing the lead portion. An inclined surface that is reflected so as to be returned is formed.

本発明の一態様による半導体装置においては、前記傾斜面は、前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面及び前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面の両方に形成されていることが好ましい。   In the semiconductor device according to an aspect of the present invention, the inclined surface faces the lead portion of the end surface of the lead portion that faces the LED element placement portion and the end surface of the LED element placement portion. It is preferable to be formed on both end faces.

本発明の一態様による半導体装置においては、前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面に前記傾斜面が形成され、前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面に、前記傾斜面とは逆向きの傾斜となる逆傾斜面が形成されていることが好ましい。   In the semiconductor device according to an aspect of the present invention, the inclined surface is formed on the end surface of the lead portion facing the LED element mounting portion, and the lead portion of the end surface of the LED element mounting portion is formed on the lead portion. It is preferable that a reverse inclined surface having an inclination opposite to the inclined surface is formed on the opposing end surfaces.

本発明の一態様による半導体装置においては、前記傾斜面に金属層が形成されていることが好ましい。   In the semiconductor device according to one aspect of the present invention, it is preferable that a metal layer is formed on the inclined surface.

本発明の一態様による半導体装置においては、前記封止樹脂部は、光反射性フィラーを含むことが好ましい。   In the semiconductor device according to an aspect of the present invention, it is preferable that the sealing resin portion includes a light reflective filler.

本発明の一態様による半導体装置においては、前記封止樹脂部は、蛍光体を含むことが好ましい。   In the semiconductor device according to an aspect of the present invention, it is preferable that the sealing resin portion includes a phosphor.

本発明によれば、ＬＥＤ素子載置部に離間して配置されたリード部のＬＥＤ素子載置部側の端面又はＬＥＤ素子載置部のリード部側の端面に、光を上部へ反射させる傾斜面を形成するので、基板側へ光が漏れることによる光の損失を抑制し、光の取り出し効率を向上させることができる。   According to the present invention, the slope that reflects light upward is reflected on the end surface on the LED element mounting portion side of the lead portion that is spaced apart from the LED element mounting portion or on the end surface on the lead portion side of the LED element mounting portion. Since the surface is formed, light loss due to light leaking to the substrate side can be suppressed, and light extraction efficiency can be improved.

本実施形態によるリードフレームの断面図である。It is sectional drawing of the lead frame by this embodiment. 本実施形態によるリードフレームのリード部の傾斜面における光の反射例を示す図である。It is a figure which shows the example of reflection of the light in the inclined surface of the lead part of the lead frame by this embodiment. 本実施形態による半導体装置の断面図である。1 is a cross-sectional view of a semiconductor device according to an embodiment. 本実施形態による半導体装置のリード部の傾斜面における光の反射例を示す図である。It is a figure which shows the example of light reflection in the inclined surface of the lead part of the semiconductor device by this embodiment. 傾斜面の断面形状の例を示す図である。It is a figure which shows the example of the cross-sectional shape of an inclined surface. 本実施形態によるリードフレームの製造方法を説明する工程断面図である。It is process sectional drawing explaining the manufacturing method of the lead frame by this embodiment. 変形例による半導体装置の断面図である。It is sectional drawing of the semiconductor device by a modification. 変形例による半導体装置の断面図である。It is sectional drawing of the semiconductor device by a modification. 変形例による半導体装置の断面図である。It is sectional drawing of the semiconductor device by a modification. 変形例によるリードフレームの断面図である。It is sectional drawing of the lead frame by a modification. リードフレームの上面図である。It is a top view of a lead frame.

以下、本発明の実施の形態を図面に基づいて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は、本実施形態によるリードフレームの断面を示している。図１に示すようにＬＥＤ用リードフレーム１０（以下、リードフレーム１０ともいう）は、ＬＥＤ素子２１（後述）を載置する載置面１１ａを有するＬＥＤ素子載置部１１と、ＬＥＤ素子載置部１１から離間して設けられたリード部１２とを備えている。   FIG. 1 shows a cross section of the lead frame according to the present embodiment. As shown in FIG. 1, an LED lead frame 10 (hereinafter also referred to as a lead frame 10) includes an LED element mounting portion 11 having a mounting surface 11a on which an LED element 21 (described later) is mounted, and an LED element mounting. And a lead portion 12 provided apart from the portion 11.

リード部１２のうちＬＥＤ素子載置部１１側の端面（ＬＥＤ素子載置部１１に対向する端面）は、高さ方向（厚み方向）全長にわたって、上向きの傾斜面１３になっている。図２に示すように、この傾斜面１３は、上方からＬＥＤ素子載置部１１とリード部１２との間の領域に向かって入射された光Ｌを、上方へ戻すように反射させることができる。   An end surface of the lead portion 12 on the LED element mounting portion 11 side (an end surface facing the LED element mounting portion 11) is an upward inclined surface 13 over the entire length in the height direction (thickness direction). As shown in FIG. 2, the inclined surface 13 can reflect the light L incident on the region between the LED element mounting portion 11 and the lead portion 12 from above so as to return upward. .

ＬＥＤ素子載置部１１及びリード部１２は、１枚の金属基板をエッチング加工することにより形成されたものである。ＬＥＤ素子載置部１１及びリード部１２の材料としては、例えば、銅、銅合金、４２合金（Ｎｉ４１％のＦｅ合金）等を挙げることができる。ＬＥＤ素子載置部１１及びリード部１２の厚みは、０．０５ｍｍ〜０．８ｍｍとすることが好ましい。   The LED element mounting part 11 and the lead part 12 are formed by etching one metal substrate. Examples of the material of the LED element mounting portion 11 and the lead portion 12 include copper, copper alloy, 42 alloy (Ni 41% Fe alloy), and the like. The thickness of the LED element mounting portion 11 and the lead portion 12 is preferably 0.05 mm to 0.8 mm.

リード部１２の表面（図１の上面）には、後述するボンディングワイヤ２２が接続されるボンディング面１２ａが形成されている。また、リード部１２の裏面（図１の下面）には、外部端子１２ｂが形成されている。   A bonding surface 12a to which a bonding wire 22 described later is connected is formed on the surface of the lead portion 12 (upper surface in FIG. 1). An external terminal 12b is formed on the back surface (the lower surface in FIG. 1) of the lead portion 12.

次に、図３を用いて、本実施形態による半導体装置の概略について説明する。図３は、本実施形態による半導体装置の断面を示している。   Next, the outline of the semiconductor device according to the present embodiment will be explained with reference to FIG. FIG. 3 shows a cross section of the semiconductor device according to the present embodiment.

図３に示すように、半導体装置３０は、図１に示すリードフレーム１０と、ＬＥＤ素子載置部１１の載置面１１ａに載置されたＬＥＤ素子２１と、ＬＥＤ素子２１とリード部１２とを電気的に接続するボンディングワイヤ（導電部）２２とを備えている。ＬＥＤ素子載置部１１、ＬＥＤ素子２１、リード部１２、及びボンディングワイヤ２２は封止樹脂部２３により封止されている。   As shown in FIG. 3, the semiconductor device 30 includes the lead frame 10 shown in FIG. 1, the LED element 21 placed on the placement surface 11 a of the LED element placement unit 11, the LED element 21 and the lead part 12. And a bonding wire (conductive portion) 22 for electrically connecting the two. The LED element mounting portion 11, the LED element 21, the lead portion 12, and the bonding wire 22 are sealed with a sealing resin portion 23.

ＬＥＤ素子２１は従来一般に用いられているものを使用することができる。また、ＬＥＤ素子２１の発光層として、例えばＧａＰ、ＧａＡｓ、ＧａＡｌＡｓ、ＧａＡｓＰ、ＡＬＩｎＧａＰ又はＩｎＧａＮ等の化合物半導体単結晶からなる材料を適宜選ぶことにより、紫外光から赤外光にわたる発光波長を選択することができる。   As the LED element 21, those conventionally used in general can be used. Further, as the light emitting layer of the LED element 21, for example, by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, ALInGaP or InGaN, a light emission wavelength ranging from ultraviolet light to infrared light can be selected. Can do.

また、ＬＥＤ素子２１は、はんだ、またはダイボンディングペースト（図示せず）により、ＬＥＤ素子載置部１１の載置面１１ａ上に固定されている。このようなダイボンディングペーストとしては、耐光性のあるエポキシ樹脂やシリコーン樹脂からなるダイボンディングペーストを選択することができる。   The LED element 21 is fixed on the placement surface 11a of the LED element placement portion 11 by solder or die bonding paste (not shown). As such a die bonding paste, a die bonding paste made of light-resistant epoxy resin or silicone resin can be selected.

ボンディングワイヤ２２は、例えば金等の導電性のよい材料からなり、その一端がＬＥＤ素子２１の端子部２１ａに接続されるとともに、その他端がリード部１２のボンディング面１２ａに接続されている。   The bonding wire 22 is made of a material having good conductivity such as gold, and one end thereof is connected to the terminal portion 21 a of the LED element 21 and the other end is connected to the bonding surface 12 a of the lead portion 12.

封止樹脂部２３は、ＬＥＤ素子２１の発光波長において光透過率が高く、また屈折率が高い材料を選択することが好ましい。耐熱性、耐光性、及び機械的強度が高い特性を満たす樹脂として、エポキシ樹脂、シリコーン樹脂、ポリオレフィン等を選択することができる。封止樹脂部２３の形状は、様々に実現することが可能であるが、例えば、封止樹脂部２３の全体形状を直方体、円筒形または錐形等の形状とすることが可能である。ＬＥＤ素子２１からの光は、封止樹脂部２３の上面や側面から放出される。   For the sealing resin portion 23, it is preferable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the LED element 21. An epoxy resin, a silicone resin, a polyolefin, or the like can be selected as a resin that satisfies the characteristics of high heat resistance, light resistance, and mechanical strength. The shape of the sealing resin portion 23 can be variously realized. For example, the entire shape of the sealing resin portion 23 can be a rectangular parallelepiped, a cylindrical shape, a cone shape, or the like. Light from the LED element 21 is emitted from the upper surface and side surfaces of the sealing resin portion 23.

封止樹脂部２３により封止されているＬＥＤ素子載置部１１、ＬＥＤ素子２１、リード部１２、及びボンディングワイヤ２２からなるＬＥＤ素子パッケージは、配線基板３５上に配置して用いることができる。このような配線基板３５は、基板本体３６と、基板本体３６上に形成された配線端子部３７、３８とを有している。配線端子部３７は、接続金属部３３を介してＬＥＤ素子載置部１１の下面に接続されている。また、配線端子部３８は、接続金属部３４を介してリード部１２の外部端子１２ｂと接続されている。接続金属部３３、３４は、例えば、はんだから構成することができる。   The LED element package composed of the LED element mounting portion 11, the LED element 21, the lead portion 12, and the bonding wire 22 sealed by the sealing resin portion 23 can be used by being disposed on the wiring substrate 35. Such a wiring board 35 has a board body 36 and wiring terminal portions 37 and 38 formed on the board body 36. The wiring terminal portion 37 is connected to the lower surface of the LED element mounting portion 11 through the connection metal portion 33. Further, the wiring terminal portion 38 is connected to the external terminal 12 b of the lead portion 12 through the connection metal portion 34. The connection metal parts 33 and 34 can be made of solder, for example.

配線端子部３７、３８間に電流を流した場合、ＬＥＤ素子載置部１１上のＬＥＤ素子２１に電流が流れ、ＬＥＤ素子２１が点灯する。   When a current is passed between the wiring terminal portions 37 and 38, a current flows through the LED element 21 on the LED element mounting portion 11, and the LED element 21 is lit.

このとき、ＬＥＤ素子２１からの光は、図４に示すように、様々な方向に放出される。
例えば、ＬＥＤ素子２１から上方へ放出された光Ｌ１は、封止樹脂部２３の外方へ放出される。また、ＬＥＤ素子２１から斜め下方向へ放出された光Ｌ２は、リード部１２の傾斜面１３で反射して上方に戻り、封止樹脂部２３の外方へ放出される。また、また、ＬＥＤ素子２１から斜め上方向へ放出された光Ｌ３は、封止樹脂部２３の上面２３ａで反射した後、リード部１２の傾斜面１３で反射して上方に戻り、封止樹脂部２３の外方へ放出される。 At this time, the light from the LED element 21 is emitted in various directions as shown in FIG.
For example, the light L1 emitted upward from the LED element 21 is emitted to the outside of the sealing resin portion 23. Further, the light L <b> 2 emitted obliquely downward from the LED element 21 is reflected by the inclined surface 13 of the lead portion 12, returns upward, and is emitted outward of the sealing resin portion 23. Further, the light L3 emitted obliquely upward from the LED element 21 is reflected by the upper surface 23a of the sealing resin portion 23, then reflected by the inclined surface 13 of the lead portion 12 and returned upward, and the sealing resin Released to the outside of the portion 23.

このように、リード部１２の傾斜面１３は、ＬＥＤ素子２１から斜め下方向へ放出された光や、封止樹脂部２３の界面等で反射した光などの、上方からＬＥＤ素子載置部１１とリード部１２との間の領域に向かって入射される光を、上方へ戻すように反射させることができる。そのため、本実施形態によれば、ＬＥＤ素子載置部１１とリード部１２との間から配線基板３５側へ光が漏れることによる光の損失を抑制し、光取り出し効率を向上させることができる。   As described above, the inclined surface 13 of the lead portion 12 has the LED element mounting portion 11 from above such as light emitted obliquely downward from the LED element 21 or light reflected from the interface of the sealing resin portion 23 or the like. Can be reflected so as to return upward. Therefore, according to the present embodiment, it is possible to suppress light loss due to light leaking from between the LED element mounting portion 11 and the lead portion 12 to the wiring substrate 35 side, and to improve light extraction efficiency.

本実施形態による半導体装置は、ＰＬＣＣ（plastic leaded chip carrier）のような、パッケージ側面からリードが引き出されるものでもよいし、ＳＯＮ（small outline non-lead）パッケージのような、リード裏面に外部端子があるものでもよい。特に、ＳＯＮパッケージのような構成では、パッケージ裏面への光の漏れがパッケージ側面から取り出せないため、より効果的である。   The semiconductor device according to the present embodiment may be such that a lead is drawn from the side of the package, such as a PLCC (plastic leaded chip carrier), or an external terminal is provided on the back surface of the lead, such as a SON (small outline non-lead) package. There may be something. In particular, a configuration such as the SON package is more effective because light leakage to the back surface of the package cannot be taken out from the side surface of the package.

なお、傾斜面１３の断面形状は、図５（ａ）に示すように、リード部１２の内方に向けて湾曲する１つの曲線形状からなっているが、これに限られるものではない。傾斜面１３の断面形状は、図５（ｂ）に示すように、リード部１２の内方に向けて湾曲する２つの曲線を上下に連結したような形状からなっていてもよい。あるいは、傾斜面１３の断面形状は、図５（ｃ）に示すように、リード部１２の上面から下面へ延びる略直線形状からなっていてもよい。   In addition, although the cross-sectional shape of the inclined surface 13 consists of one curve shape curved toward the inner side of the lead part 12, as shown to Fig.5 (a), it is not restricted to this. As shown in FIG. 5B, the cross-sectional shape of the inclined surface 13 may be a shape in which two curves that curve toward the inside of the lead portion 12 are connected vertically. Or the cross-sectional shape of the inclined surface 13 may consist of the substantially linear shape extended from the upper surface to the lower surface of the lead part 12, as shown in FIG.5 (c).

次に、図１に示すリードフレーム１０の製造方法について図６（ａ）〜（ｄ）を用いて説明する。   Next, a method for manufacturing the lead frame 10 shown in FIG. 1 will be described with reference to FIGS.

まず、図６（ａ）に示すように、平板状の金属基板４１を準備する。この金属基板４１としては、上述のように銅、銅合金、４２合金（Ｎｉ４１％のＦｅ合金）等からなる金属基板を使用することができる。なお、金属基板４１は、その両面に対して脱脂等を行い、洗浄処理を施したものを使用することが好ましい。   First, as shown in FIG. 6A, a flat metal substrate 41 is prepared. As the metal substrate 41, a metal substrate made of copper, copper alloy, 42 alloy (Ni 41% Fe alloy) or the like can be used as described above. In addition, it is preferable to use what the metal substrate 41 performed the degreasing | defatting etc. to the both surfaces, and performed the washing process.

次に、金属基板４１の表裏に感光性レジストを塗布、乾燥し、これを所望のフォトマスクを介して露光した後、現像してエッチング用レジスト層４２、４３を形成する（図６（ｂ））。なお、感光性レジストとしては、従来公知のものを使用することができる。   Next, a photosensitive resist is applied to the front and back of the metal substrate 41, dried, exposed through a desired photomask, and then developed to form etching resist layers 42 and 43 (FIG. 6B). ). As the photosensitive resist, a conventionally known resist can be used.

次に、エッチング用レジスト層４２、４３をマスクとして金属基板４１にウェットエッチングを施す。例えば、金属基板４１として銅を用いる場合、塩化第二鉄水溶液を使用してウェットエッチングを行うことができる。   Next, wet etching is performed on the metal substrate 41 using the etching resist layers 42 and 43 as a mask. For example, when copper is used as the metal substrate 41, wet etching can be performed using a ferric chloride aqueous solution.

その後、図６（ｃ）に示すように、金属基板４１が厚さ方向に貫通して空間４４が形成され、同時に、空間４４を介してＬＥＤ素子載置部１１及びリード部１２が形成される。
また、リード部１２のうちＬＥＤ素子載置部１１側の端面に、高さ方向（厚み方向）全長にわたって上向きの傾斜面１３が形成される。 Thereafter, as shown in FIG. 6C, the metal substrate 41 penetrates in the thickness direction to form a space 44, and at the same time, the LED element mounting portion 11 and the lead portion 12 are formed through the space 44. .
In addition, an upward inclined surface 13 is formed on the end surface of the lead portion 12 on the LED element mounting portion 11 side over the entire length in the height direction (thickness direction).

続いて、図６（ｄ）に示すように、エッチング用レジスト層４２、４３を剥離して除去する。このようにして、ＬＥＤ素子載置部１１と、ＬＥＤ素子載置部１１から離間して設けられたリード部１２とを備えたリードフレーム１０が得られる。   Subsequently, as shown in FIG. 6D, the etching resist layers 42 and 43 are peeled and removed. Thus, the lead frame 10 provided with the LED element mounting part 11 and the lead part 12 provided apart from the LED element mounting part 11 is obtained.

なお、傾斜面１３の断面形状は、図６（ｂ）に示す工程で形成されるエッチング用レジスト層４２、４３のパターン形状に応じて変化する。そのため、図６（ｂ）に示す工程では、傾斜面１３の断面形状が所望の形状となるように、エッチング用レジスト層４２、４３を形成する。   Note that the cross-sectional shape of the inclined surface 13 changes according to the pattern shape of the etching resist layers 42 and 43 formed in the step shown in FIG. Therefore, in the step shown in FIG. 6B, the etching resist layers 42 and 43 are formed so that the cross-sectional shape of the inclined surface 13 becomes a desired shape.

また、図６（ｃ）では、ＬＥＤ素子載置部１１のリード部１２側の端面が垂直平面に示されているが、エッチングの進行に伴い、ＬＥＤ素子載置部１１の内方に向けて多少湾曲した形状になり得る。   Further, in FIG. 6C, the end surface of the LED element mounting portion 11 on the lead portion 12 side is shown as a vertical plane, but toward the inside of the LED element mounting portion 11 as etching progresses. It can be a slightly curved shape.

図３に示す半導体装置３０を作製する場合は、まず、図６（ａ）〜（ｄ）に示す工程によりリードフレーム１０を作製した後、ＬＥＤ素子載置部１１に、はんだ又はダイボンディングペーストを用いて、ＬＥＤ素子２１を載置して固定する。次に、ＬＥＤ素子２１とリード部１２とをボンディングワイヤ２２によって接続する。次に、ＬＥＤ素子載置部１１、ＬＥＤ素子２１、リード部１２、及びボンディングワイヤ２２を封止樹脂部２３により封止する。その後、配線基板３５の配線端子部３７及び３８と、ＬＥＤ素子載置部１１の下面及びリード部１２の外部端子１２ｂとをそれぞれはんだ等の接続金属部３３、３４を介して接続する。このようにして、図３に示す半導体装置３０を得ることができる。   When the semiconductor device 30 shown in FIG. 3 is manufactured, first, the lead frame 10 is manufactured by the steps shown in FIGS. 6A to 6D, and then the solder or die bonding paste is applied to the LED element mounting portion 11. Using, the LED element 21 is mounted and fixed. Next, the LED element 21 and the lead part 12 are connected by the bonding wire 22. Next, the LED element mounting portion 11, the LED element 21, the lead portion 12, and the bonding wire 22 are sealed with a sealing resin portion 23. Thereafter, the wiring terminal portions 37 and 38 of the wiring substrate 35 are connected to the lower surface of the LED element mounting portion 11 and the external terminals 12b of the lead portion 12 via connecting metal portions 33 and 34 such as solder, respectively. In this way, the semiconductor device 30 shown in FIG. 3 can be obtained.

なお、上記実施形態では、リード部１２のうちＬＥＤ素子載置部１１側の端面を上向きの傾斜面１３としていたが、図７に示すように、ＬＥＤ素子載置部１１のうちリード部１２側の端面（リード部１２に対向する端面）を上向きの傾斜面１４としてもよい。傾斜面１４は、傾斜面１３と同様に、封止樹脂部２３の界面等で反射した光などの、上方からＬＥＤ素子載置部１１とリード部１２との間の領域に向かって入射される光を、上方へ戻すように反射させることができる。そのため、図７に示すような構成によっても、ＬＥＤ素子載置部１１とリード部１２との間から配線基板３５側へ光が漏れることによる光の損失を抑制し、光取り出し効率を向上させることができる。   In the above-described embodiment, the end face on the LED element mounting portion 11 side of the lead portion 12 is the upward inclined surface 13, but as shown in FIG. 7, the lead portion 12 side of the LED element mounting portion 11 is shown. The end face (the end face facing the lead portion 12) may be an upward inclined face 14. Similar to the inclined surface 13, the inclined surface 14 is incident on the region between the LED element mounting portion 11 and the lead portion 12 from above, such as light reflected at the interface of the sealing resin portion 23. The light can be reflected back up. Therefore, even with the configuration shown in FIG. 7, light loss due to light leaking from between the LED element mounting portion 11 and the lead portion 12 to the wiring substrate 35 side is suppressed, and light extraction efficiency is improved. Can do.

また、図８に示すように、リード部１２のうちＬＥＤ素子載置部１１側の端面とＬＥＤ素子載置部１１のうちリード部１２側の端面の両方を上向きの傾斜面１３、１４としてもよい。２つの傾斜面１３、１４が、上方からＬＥＤ素子載置部１１とリード部１２との間の領域に向かって入射される光を、上方へ戻すように反射させる。そのため、図８に示すような構成にすることで、ＬＥＤ素子載置部１１とリード部１２との間から配線基板３５側へ光が漏れることによる光の損失をさらに抑制し、光取り出し効率をさらに向上させることができる。   Further, as shown in FIG. 8, both the end surface on the LED element mounting portion 11 side of the lead portion 12 and the end surface on the lead portion 12 side of the LED element mounting portion 11 are formed as upward inclined surfaces 13 and 14. Good. The two inclined surfaces 13 and 14 reflect the light incident from above toward the region between the LED element mounting portion 11 and the lead portion 12 so as to return upward. Therefore, by adopting the configuration as shown in FIG. 8, the loss of light due to light leaking from between the LED element mounting portion 11 and the lead portion 12 to the wiring substrate 35 side is further suppressed, and the light extraction efficiency is improved. Further improvement can be achieved.

また、図９に示すように、ＬＥＤ素子載置部１１のうちリード部１２側の端面を、傾斜面１３とは逆向きの傾斜、すなわち下向きの逆傾斜面１５としてもよい。このような逆傾斜面１５を設けることで、上述した効果に加え、リードフレーム１０と封止樹脂部２３との密着性が向上し、封止樹脂部２３がリードフレーム１０から外れることを防止できるため、ＬＥＤ素子パッケージを容易に取り扱うことができる。これとは逆に、ＬＥＤ素子載置部１１のうちリード部１２側の端面を上向きの傾斜面、リード部１２のうちＬＥＤ素子載置部１１側の端面を逆傾斜面とすることもできる。   As shown in FIG. 9, the end surface of the LED element mounting portion 11 on the lead portion 12 side may be inclined in the direction opposite to the inclined surface 13, that is, the reverse inclined surface 15 in the downward direction. By providing such a reverse inclined surface 15, in addition to the effects described above, the adhesion between the lead frame 10 and the sealing resin portion 23 can be improved, and the sealing resin portion 23 can be prevented from being detached from the lead frame 10. Therefore, the LED element package can be easily handled. On the contrary, the end surface on the lead portion 12 side of the LED element mounting portion 11 may be an upward inclined surface, and the end surface on the LED element mounting portion 11 side of the lead portion 12 may be an inverted inclined surface.

また、図１０に示すように、傾斜面１３に金属層１６を形成してもよい。金属層１６は例えば電界メッキ法により形成することができる。金属層１６には、例えば銀、金、パラジウム、ニッケル／パラジウム／金の三層構造等の、可視光の反射率が高い材料が使用される。金属層１６の厚みは、例えば銀の場合は１μｍ〜５μｍとすることが好ましい。金属層１６を形成することで、傾斜面１３における光反射率が高まり、半導体装置３０における光取り出し効率をさらに向上させることができる。図７、図８に示す構成では、傾斜面１４に金属層１６を形成するで、傾斜面１４における光反射率が高まり、光取り出し効率をさらに向上させることができる。   Further, as shown in FIG. 10, a metal layer 16 may be formed on the inclined surface 13. The metal layer 16 can be formed by, for example, an electroplating method. For the metal layer 16, a material having a high visible light reflectance such as a three-layer structure of silver, gold, palladium, nickel / palladium / gold, or the like is used. The thickness of the metal layer 16 is preferably 1 μm to 5 μm in the case of silver, for example. By forming the metal layer 16, the light reflectance on the inclined surface 13 is increased, and the light extraction efficiency in the semiconductor device 30 can be further improved. In the configuration shown in FIGS. 7 and 8, since the metal layer 16 is formed on the inclined surface 14, the light reflectance at the inclined surface 14 is increased, and the light extraction efficiency can be further improved.

金属層をリードフレーム全面に設けるようにしてもよい。これにより、パッケージ裏面に漏れた僅かな光も取り出すことができる。特に、はんだ接合に供されない外部端子がある場合は、より有効である。   A metal layer may be provided on the entire surface of the lead frame. Thereby, a slight amount of light leaking to the back surface of the package can be taken out. In particular, it is more effective when there are external terminals that are not subjected to solder joint.

上記実施形態において封止樹脂部２３に光反射性フィラーを含有させてもよい。光反射性フィラーを含有させることで、封止樹脂部２３内で光をより散乱させて、光取り出し効率をさらに向上させることができる。光反射性フィラーとしては、銀、ニッケル、コバルト、白金、チタン、鉛、スズ、タングステン、アルミニウム、亜鉛、金、銅、鉄、クロム等の金属やこれらの合金の金属微粒子を用いることができる。   In the above embodiment, the sealing resin portion 23 may contain a light reflective filler. By containing the light reflective filler, light can be further scattered in the sealing resin portion 23, and the light extraction efficiency can be further improved. As the light reflective filler, metals such as silver, nickel, cobalt, platinum, titanium, lead, tin, tungsten, aluminum, zinc, gold, copper, iron, and chromium, and metal fine particles of these alloys can be used.

また、上記実施形態において封止樹脂部２３に蛍光体を含有させてもよい。例えばＬＥＤ素子２１に青色ＬＥＤを使用し、封止樹脂部２３に黄色発光蛍光体を含有させた場合、青色ＬＥＤからの光が蛍光体に吸収されると、蛍光体が黄色光を発し、この黄色光と、蛍光体に吸収されなかった青色光とが混ざり合って、白色光を得ることができる。黄色発光蛍光体としては、例えば、セリウムで賦活したイットリウム・アルミニウム・ガーネット（ＹＡＧ）を用いることができる。また、封止樹脂部２３に蛍光体を含有させることで、封止樹脂部２３内で光をより散乱させて、光取り出し効率をさらに向上させることができる。   Moreover, you may make the sealing resin part 23 contain a fluorescent substance in the said embodiment. For example, when a blue LED is used for the LED element 21 and the sealing resin portion 23 contains a yellow light-emitting phosphor, when the light from the blue LED is absorbed by the phosphor, the phosphor emits yellow light. Yellow light and blue light that has not been absorbed by the phosphor are mixed together to obtain white light. As the yellow light-emitting phosphor, for example, yttrium-aluminum-garnet (YAG) activated with cerium can be used. Moreover, by making the sealing resin part 23 contain a phosphor, light can be further scattered in the sealing resin part 23 to further improve the light extraction efficiency.

上記実施形態において、リードフレーム１０のリード部１２は、図１１（ａ）に示すように、ＬＥＤ素子載置部１１に対向する端面を１つ有し、この端面が傾斜面１３となっていてもよいし、図１１（ｂ）に示すように、リード部１２がＬＥＤ素子載置部１１を囲むように設けられ、リード部１２の複数の端面のうち、ＬＥＤ素子載置部１１に対向する複数の端面が傾斜面１３になっていてもよい。リード部１２が、ＬＥＤ素子載置部１１に対向する端面を複数有している場合、ＬＥＤ素子載置部１１に対向するすべての端面を傾斜面１３にしてもよいし、一部を傾斜面１３にするのでもよい。なお、図１１（ａ）、（ｂ）はリードフレーム１０の上面図であり、Ａ−Ａ線に沿った断面、Ｂ−Ｂ線に沿った断面が図１に対応している。   In the above embodiment, the lead portion 12 of the lead frame 10 has one end face facing the LED element mounting portion 11 as shown in FIG. Alternatively, as shown in FIG. 11B, the lead portion 12 is provided so as to surround the LED element placement portion 11, and faces the LED element placement portion 11 among a plurality of end surfaces of the lead portion 12. A plurality of end surfaces may be inclined surfaces 13. When the lead part 12 has a plurality of end faces that face the LED element placement part 11, all the end faces that face the LED element placement part 11 may be inclined faces 13, and some of the end faces are inclined faces. It may be 13. 11A and 11B are top views of the lead frame 10, and a cross section taken along line AA and a cross section taken along line BB correspond to FIG.

同様に、ＬＥＤ素子載置部１１が、リード部１２に対向する端面を複数有する場合は、リード部１２に対向するすべての端面を傾斜面１４にしてもよいし、一部を傾斜面１４にするのでもよい。   Similarly, when the LED element mounting portion 11 has a plurality of end surfaces facing the lead portion 12, all the end surfaces facing the lead portion 12 may be inclined surfaces 14, or a part thereof is the inclined surface 14. You may do it.

なお、本発明は上記実施形態そのままに限定されるものではなく、実施段階ではその要旨を逸脱しない範囲で構成要素を変形して具体化できる。また、上記実施形態に開示されている複数の構成要素の適宜な組み合わせにより、種々の発明を形成できる。例えば、実施形態に示される全構成要素から幾つかの構成要素を削除してもよい。さらに、異なる実施形態にわたる構成要素を適宜組み合わせてもよい。   Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. In addition, various inventions can be formed by appropriately combining a plurality of components disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

１０ リードフレーム
１１ ＬＥＤ素子載置部
１２ リード部
１３、１４ 傾斜面
１５ 逆傾斜面
１６ 金属層
２１ ＬＥＤ素子
２２ ボンディングワイヤ
２３ 封止樹脂部
３０ 半導体装置
３３、３４ 接続金属部
３５ 配線基板
３６ 基板本体
３７、３８ 配線端子部
４１ 金属基板
４２、４３ エッチング用レジスト層
４４ 空間 DESCRIPTION OF SYMBOLS 10 Lead frame 11 LED element mounting part 12 Lead part 13, 14 Inclined surface 15 Reverse inclined surface 16 Metal layer 21 LED element 22 Bonding wire 23 Sealing resin part 30 Semiconductor device 33, 34 Connection metal part 35 Wiring board 36 Substrate body 37, 38 Wiring terminal portion 41 Metal substrate 42, 43 Etching resist layer 44 Space

Claims (10)

ＬＥＤ素子が載置されるリードフレームであって、
前記ＬＥＤ素子が載置されるＬＥＤ素子載置部と、
前記ＬＥＤ素子載置部に離間して配置されたリード部と、
を備え、
前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面、又は前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面に、高さ方向全長にわたって、上方からの光を上方へ戻すよう反射する傾斜面が形成されていることを特徴とするリードフレーム。 A lead frame on which the LED element is mounted,
An LED element mounting portion on which the LED element is mounted;
A lead portion disposed apart from the LED element mounting portion;
With
Light from above is applied over the entire length in the height direction on the end face of the lead part facing the LED element mounting part or the end face of the LED element mounting part facing the lead part. A lead frame, characterized in that an inclined surface is formed so as to be reflected back. 前記傾斜面は、前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面及び前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面の両方に形成されていることを特徴とする請求項１に記載のリードフレーム。   The inclined surface is formed on both of an end surface of the lead portion facing the LED element mounting portion and an end surface of the LED element mounting portion facing the lead portion. The lead frame according to claim 1. 前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面に前記傾斜面が形成され、
前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面に、前記傾斜面とは逆向きの傾斜となる逆傾斜面が形成されていることを特徴とする請求項１に記載のリードフレーム。 The inclined surface is formed on the end surface of the lead portion facing the LED element mounting portion among the end surfaces,
2. The lead according to claim 1, wherein a reverse inclined surface that is inclined in a direction opposite to the inclined surface is formed on an end surface of the LED element mounting portion facing the lead portion. flame. 前記傾斜面に金属層が形成されていることを特徴とする請求項１乃至３のいずれかに記載のリードフレーム。   4. The lead frame according to claim 1, wherein a metal layer is formed on the inclined surface. ＬＥＤ素子載置部と、
前記ＬＥＤ素子載置部に載置されたＬＥＤ素子と、
前記ＬＥＤ素子載置部に離間して配置されたリード部と、
前記ＬＥＤ素子と前記リード部とを電気的に接続する導電部と、
前記ＬＥＤ素子載置部、前記ＬＥＤ素子、前記リード部、及び前記導電部を封止する封止樹脂部と、
を備え、
前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面、又は前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面に、高さ方向全長にわたって、上方からの光を上方へ戻すよう反射する傾斜面が形成されていることを特徴とする半導体装置。 An LED element mounting portion;
LED elements placed on the LED element placement portion;
A lead portion disposed apart from the LED element mounting portion;
A conductive portion that electrically connects the LED element and the lead portion;
A sealing resin portion for sealing the LED element mounting portion, the LED element, the lead portion, and the conductive portion;
With
Light from above is applied over the entire length in the height direction on the end face of the lead part facing the LED element mounting part or the end face of the LED element mounting part facing the lead part. A semiconductor device characterized in that an inclined surface is formed so as to be reflected back. 前記傾斜面は、前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面及び前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面の両方に形成されていることを特徴とする請求項５に記載の半導体装置。   The inclined surface is formed on both of an end surface of the lead portion facing the LED element mounting portion and an end surface of the LED element mounting portion facing the lead portion. The semiconductor device according to claim 5. 前記リード部の端面のうち前記ＬＥＤ素子載置部に対向する端面に前記傾斜面が形成され、
前記ＬＥＤ素子載置部の端面のうち前記リード部に対向する端面に、前記傾斜面とは逆向きの傾斜となる逆傾斜面が形成されていることを特徴とする請求項５に記載の半導体装置。 The inclined surface is formed on the end surface of the lead portion facing the LED element mounting portion among the end surfaces,
6. The semiconductor according to claim 5, wherein a reverse inclined surface having an inclination opposite to the inclined surface is formed on an end surface of the LED element mounting portion facing the lead portion. apparatus. 前記傾斜面に金属層が形成されていることを特徴とする請求項５乃至７のいずれかに記載の半導体装置。   The semiconductor device according to claim 5, wherein a metal layer is formed on the inclined surface. 前記封止樹脂部は、光反射性フィラーを含むことを特徴とする請求項５乃至８のいずれかに記載の半導体装置。   The semiconductor device according to claim 5, wherein the sealing resin portion includes a light reflective filler. 前記封止樹脂部は、蛍光体を含むことを特徴とする請求項５乃至９のいずれかに記載の半導体装置。   The semiconductor device according to claim 5, wherein the sealing resin portion includes a phosphor.
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