JP2016166899A - 電気テスト用コンタクトおよびそれを用いた電気テスト用ソケット - Google Patents
電気テスト用コンタクトおよびそれを用いた電気テスト用ソケット Download PDFInfo
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- 238000012360 testing method Methods 0.000 title claims abstract description 171
- 238000007747 plating Methods 0.000 claims abstract description 170
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 53
- 239000000956 alloy Substances 0.000 claims abstract description 53
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 29
- 239000010931 gold Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 15
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000003963 antioxidant agent Substances 0.000 claims 1
- 230000003078 antioxidant effect Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 7
- 229910001020 Au alloy Inorganic materials 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 154
- 229910000679 solder Inorganic materials 0.000 description 42
- 239000000523 sample Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 238000005192 partition Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000004649 discoloration prevention Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 241000272168 Laridae Species 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910002696 Ag-Au Inorganic materials 0.000 description 1
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- 229910002710 Au-Pd Inorganic materials 0.000 description 1
- 229910017392 Au—Co Inorganic materials 0.000 description 1
- 229910017398 Au—Ni Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 and further Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/70—Coupling devices
- H01R12/71—Coupling devices for rigid printing circuits or like structures
- H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
- H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0433—Sockets for IC's or transistors
- G01R1/0441—Details
- G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0433—Sockets for IC's or transistors
- G01R1/0483—Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/70—Coupling devices
- H01R12/82—Coupling devices connected with low or zero insertion force
- H01R12/85—Coupling devices connected with low or zero insertion force contact pressure producing means, contacts activated after insertion of printed circuits or like structures
- H01R12/88—Coupling devices connected with low or zero insertion force contact pressure producing means, contacts activated after insertion of printed circuits or like structures acting manually by rotating or pivoting connector housing parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
Abstract
【解決手段】電気テスト用コンタクト(10)は、上端がIC端子に接触する接触部(10a)に、下端がテストボードに半田付けされる端子部(10b)になり、その両者間に、IC端子との接触に応じ接触部(10a)に作用する荷重を弾性的に支持するべく湾曲して形成されたバネ部(10c)、支持部(10d)、及び電気テスト用ソケットに対する固定部(10e)を有する。電気テスト用コンタクト(10)は金属薄板の基材(11)を有し、その表面にNi又はNi基合金から成る第1めっき層(12)と、薄いAu又はAu合金から成る第2めっき層(13)がこの順に形成される。そして、接触部(10a)のみに、第2めっき層(13)上に更にPd又はPd基合金から成る第3めっき層(14)及びAg又はAg基合金から成る第4めっき層(15)が積層される。
【選択図】図1
Description
金属材料から成る基材と、該基材の表面に形成されたニッケルあるいはニッケル基合金から成る第1めっき層と、を有し、
前記接触部および前記端子部には、前記第1めっき層に接して金あるいは金基合金から成る第2めっき層が形成され、さらに前記接触部のみに前記第2めっき層に接するパラジウムまたはパラジウム基合金から成る第3めっき層と、該第3めっき層に接する銀あるいは銀基合金から成る第4めっき層と、が積層して形成され、
前記第2めっき層は、前記第1めっき層および第3めっき層間での応力緩和機能を果たすために、前記第1めっき層および前記第3めっき層よりも軟質であり、且つ0.05μm以上の厚さに形成されていることを特徴とする。
次に、ICソケットに取り付けられる電気テスト用コンタクトの他の実施形態について図8を参照して説明する。この電気テスト用コンタクト30は上下方向に略直線状になったコンタクトピンである。ここで、図8におけるその上端がIC端子に接触する接触部30aになり、その下端がテストボード16にフロー半田17により半田付けされる端子部30bになる。そして、上記接触部30aと端子部30bの間に、コンタクト30の長手方向に対して横方向に弾性変形するバネ部30cと、ICソケットに支持され固定される支持部30eが形成される。この場合のICソケットは、図3および図4で説明した構成を、本実施形態に係る電気テスト用コンタクト30に適合するように変更すればよい。接触部30aを一端としたバネ部30cは2枚の細長い弾性接片の基材から成り、その他端が靱性のある針状の支持部30eに一体接合している。そして、針状の支持部30eを基端としてその先端が端子部30bになっている。なお、IC端子と接触部30aとの接触に応じてバネ部30cが弾性変形する方向、すなわち2枚の細長い弾性接片が開く方向は、隣接する電気テスト用コンタクト30のバネ部30cの接触が生じないように定められる。
Claims (2)
- 被検体の端子に接触する接触部と、テストボードに固定される端子部と、を備え、前記被検体の検査に用いられる電気テスト用コンタクトであって、
金属材料から成る基材と、該基材の表面に形成されたニッケルあるいはニッケル基合金から成る第1めっき層と、を有し、
前記接触部および前記端子部には、前記第1めっき層に接して金あるいは金基合金から成る第2めっき層が形成され、さらに前記接触部のみに前記第2めっき層に接するパラジウムまたはパラジウム基合金から成る第3めっき層と、該第3めっき層に接する銀あるいは銀基合金から成る第4めっき層と、が積層して形成され、
前記第2めっき層は、前記第1めっき層および第3めっき層間での応力緩和機能を果たすために、前記接触部において、0.05μm以上の厚さに形成されていることを特徴とする電気テスト用コンタクト。 - 前記第2めっき層は、前記端子部において、前記第1めっき層の酸化防止機能を果たすために、0.3μm以下の厚さに形成されていることを特徴とする請求項1に記載の電気テスト用コンタクト。
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JP2012142339 | 2012-06-25 | ||
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20190073539A (ko) * | 2016-12-16 | 2019-06-26 | 니혼덴산리드가부시키가이샤 | 콘택트 프로브 및 전기 접속 지그 |
US10782317B2 (en) | 2017-05-25 | 2020-09-22 | Nidec-Read Corporation | Contact probe |
KR20210120800A (ko) * | 2020-03-26 | 2021-10-07 | (주)티에스이 | 반도체 패키지의 테스트 장치 |
KR20220167899A (ko) * | 2021-06-15 | 2022-12-22 | (주)포인트엔지니어링 | 검사 소켓용 지지 플레이트, 검사 소켓용 소켓핀 및 이들을 구비하는 검사 소켓 |
EP4306967A1 (en) * | 2022-07-12 | 2024-01-17 | Yamaichi Electronics Co., Ltd. | Contact pin and inspection socket for integrated circuits |
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JP2014182976A (ja) * | 2013-03-21 | 2014-09-29 | Enplas Corp | 電気接触子及び電気部品用ソケット |
DE102016004520A1 (de) | 2016-04-13 | 2017-10-19 | Rosenberger Hochfrequenztechnik Gmbh & Co. Kg | Kontaktstift und Testsockel mit Kontaktstiften |
CN109417235B (zh) * | 2016-06-17 | 2020-12-22 | 京瓷株式会社 | 连接器 |
US11609244B2 (en) * | 2020-03-26 | 2023-03-21 | Tse Co., Ltd. | Test apparatus for semiconductor package |
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- 2013-06-25 WO PCT/JP2013/067388 patent/WO2014003003A1/ja active Application Filing
- 2013-06-25 JP JP2014522640A patent/JP6006793B2/ja active Active
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WO2007034921A1 (ja) * | 2005-09-22 | 2007-03-29 | Enplas Corporation | 電気接触子及び電気部品用ソケット |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20190073539A (ko) * | 2016-12-16 | 2019-06-26 | 니혼덴산리드가부시키가이샤 | 콘택트 프로브 및 전기 접속 지그 |
KR102134193B1 (ko) | 2016-12-16 | 2020-07-15 | 니혼덴산리드가부시키가이샤 | 콘택트 프로브 및 전기 접속 지그 |
US11415599B2 (en) | 2016-12-16 | 2022-08-16 | Nidec Read Corporation | Contact probe and electrical connection jig |
US10782317B2 (en) | 2017-05-25 | 2020-09-22 | Nidec-Read Corporation | Contact probe |
KR20210120800A (ko) * | 2020-03-26 | 2021-10-07 | (주)티에스이 | 반도체 패키지의 테스트 장치 |
KR102519846B1 (ko) * | 2020-03-26 | 2023-04-11 | (주)티에스이 | 반도체 패키지의 테스트 장치 |
KR20220167899A (ko) * | 2021-06-15 | 2022-12-22 | (주)포인트엔지니어링 | 검사 소켓용 지지 플레이트, 검사 소켓용 소켓핀 및 이들을 구비하는 검사 소켓 |
KR102606892B1 (ko) * | 2021-06-15 | 2023-11-29 | (주)포인트엔지니어링 | 검사 소켓용 지지 플레이트, 검사 소켓용 소켓핀 및 이들을 구비하는 검사 소켓 |
EP4306967A1 (en) * | 2022-07-12 | 2024-01-17 | Yamaichi Electronics Co., Ltd. | Contact pin and inspection socket for integrated circuits |
Also Published As
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JPWO2014003003A1 (ja) | 2016-06-02 |
WO2014003003A1 (ja) | 2014-01-03 |
JP6006793B2 (ja) | 2016-10-12 |
JP6241502B2 (ja) | 2017-12-06 |
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