JP2016143783A - Electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic device capable of appropriately exhibiting a function of an electronic element.SOLUTION: An electronic device A1 comprises: a substrate 1 that has a principal face 111 and a rear face 112 which face the sides opposite to each other in a thickness direction, and that is made of a semiconductor material; an electronic element 711 arranged on the substrate 1; and a conductive layer 3 conductive with the electronic element 711. The substrate 1 is formed with an element arrangement recessed part 14 recessed from the principal face 111. At the element arrangement recessed part 14, the electronic element 711 is arranged. An encapsulation resin part 6 that covers at least a part of the electronic element 711 is provided. The electronic element 711 has an electrode 711 located at a side to which the principal face 111 faces. The conductive layer 3 has an encapsulation resin part connection part 36 conductive with the electrode 711 of the electronic element 711, and that is supported by the encapsulation resin part 6. A sealing chip electrode pad 341 located at a side to which the principal face 111 faces, and that is conductive with the conductive layer 3 is provided.SELECTED DRAWING: Figure 2

Description

  The present invention relates to an electronic device.

  Various types of electronic devices having a specific function with respect to input / output of current from the outside have been proposed. Generally, in order to fulfill the function of this electronic device, a plurality of electronic elements each constituting a part of an electric circuit are incorporated. Metal leads are used for the purpose of supporting these electronic elements and conducting them. The number, shape and size of the leads are determined according to the function, shape and size of the plurality of electronic elements. The plurality of electronic elements mounted on the leads are covered with a sealing resin. The sealing resin is for protecting these electronic elements and part of the leads. Such an electronic device is used by being mounted on a circuit board of an electronic device, for example. In the electronic device, it is important that the function of the electronic element is sufficiently exhibited. Note that Patent Document 1 is cited as a document related to the electronic device.

JP 2012-99673 A

  The present invention has been conceived under the circumstances described above, and an object of the present invention is to provide an electronic device capable of more appropriately exerting the function of the electronic element.

  An electronic device provided by the present invention has a main surface and a back surface that face opposite sides in the thickness direction, and is electrically connected to a substrate made of a semiconductor material, an electronic element disposed on the substrate, and the electronic element. An electronic device comprising a conductive layer, wherein the substrate is provided with an element placement recess that is recessed from the main surface, and the element placement recess is provided with the electronic element, A sealing resin portion covering at least a part of the electronic element, the electronic element having an electrode positioned on a side facing the main surface, and the conductive layer being electrically connected to the electrode of the electronic element; And having an encapsulating resin portion communication portion supported by the encapsulating resin portion, and having an electrode pad located on the side facing the main surface and conducting to the conductive layer. .

  In a preferred embodiment of the present invention, the element arrangement recess has an element arrangement recess bottom surface facing the thickness direction, and the electronic element is arranged on the element arrangement recess bottom surface. .

  In a preferred embodiment of the present invention, the element placement recess has an element placement recess side surface that stands up from the element placement recess bottom surface.

  In a preferred embodiment of the present invention, the bottom surface of the element placement recess is a surface orthogonal to the thickness direction.

  In a preferred embodiment of the present invention, the side surface of the element placement recess is inclined with respect to the thickness direction.

  In a preferred embodiment of the present invention, an angle of the element placement recess side surface with respect to the element placement recess bottom surface is 55 degrees.

  In a preferred embodiment of the present invention, the substrate is made of a single crystal of a semiconductor material.

  In a preferred embodiment of the present invention, the semiconductor material is Si.

  In a preferred embodiment of the present invention, the main surface and the back surface are orthogonal to the thickness direction of the substrate and are flat.

  In a preferred embodiment of the present invention, the main surface is a (100) surface.

  In a preferred embodiment of the present invention, the side surface of the recess for element arrangement is connected to the main surface.

  In a preferred embodiment of the present invention, the electronic element is a light receiving element having a light receiving portion and performing a photoelectric conversion function of outputting an electric signal corresponding to the received light.

  In a preferred embodiment of the present invention, the sealing resin portion includes a first sealing resin portion that covers at least a part of the bottom surface of the element placement recess and the electronic element, covers the light receiving portion, and And a second sealing resin portion that transmits light having a wavelength that is an object of the conversion function.

  In a preferred embodiment of the present invention, the first sealing resin portion covers at least a part of the side surface of the element placement recess.

  In a preferred embodiment of the present invention, the sealing resin portion connecting portion of the conductive layer is sandwiched between the first sealing resin portion and the second sealing resin portion.

  In a preferred embodiment of the present invention, the second sealing resin portion is formed in a region extending from the element placement recess to the main surface in the thickness direction view.

  In preferable embodiment of this invention, the surface which faces the same side as the said main surface of the said 2nd sealing resin part is flat.

  In a preferred embodiment of the present invention, there is provided a seal chip main surface facing the opposite side to the element arrangement recess in the thickness direction, and a seal chip back surface facing the opposite side of the seal chip main surface. And a seal chip that covers at least a part of the concave portion for element arrangement on the main surface side.

  In a preferred embodiment of the present invention, the seal tip is made of Si.

  In a preferred embodiment of the present invention, the electrode pad is a seal chip electrode pad provided on the seal chip.

  In a preferred embodiment of the present invention, the seal chip electrode pad is provided on the seal chip main surface.

  In a preferred embodiment of the present invention, the seal chip has an opening that encloses the light receiving portion of the electronic element when viewed in the thickness direction.

  In a preferred embodiment of the present invention, the seal chip is bonded to the second sealing resin portion.

  In a preferred embodiment of the present invention, the seal chip has a seal chip side surface that is inclined so as to be located inward in the thickness direction view from the back surface of the seal chip toward the main surface of the seal chip. The conductive layer includes a seal chip side surface connecting portion formed on the side surface of the seal chip.

  In a preferred embodiment of the present invention, the seal tip side surface connecting portion reaches the edge of the main surface.

  In a preferred embodiment of the present invention, the conductive layer includes a main surface side connecting portion formed on the main surface of the substrate.

  In a preferred embodiment of the present invention, the electrode pad is a main surface electrode pad provided on the main surface.

  In a preferred embodiment of the present invention, the conductive layer includes a main surface side connecting portion formed on the main surface of the substrate.

  In a preferred embodiment of the present invention, the main surface electrode pad is formed on the main surface side connecting portion.

  In a preferred embodiment of the present invention, the substrate has a light emitting element disposition recess that is recessed from the main surface, different from the element disposition recess where the electronic element as the light receiving element is disposed. A light emitting element is disposed in the light emitting element disposing recess.

  In preferable embodiment of this invention, the said light emitting element emits the light of the wavelength which is the object of the said photoelectric conversion function.

  In a preferred embodiment of the present invention, the light emitting element arrangement recess has a light emitting element arrangement recess bottom surface facing the thickness direction, and the light emission is arranged on the light emitting element arrangement recess bottom surface. ing.

  In a preferred embodiment of the present invention, the light emitting element placement recess has a light emitting element placement recess side surface that stands up from the light emitting element placement recess bottom surface.

  In a preferred embodiment of the present invention, the bottom surface of the concave portion for light emitting element arrangement is a surface orthogonal to the thickness direction.

  In a preferred embodiment of the present invention, the side surface of the concave portion for arranging a light emitting element is inclined with respect to the thickness direction.

  In a preferred embodiment of the present invention, an angle of the light emitting element disposition recess side surface with respect to the light emitting element disposition recess bottom surface is 55 degrees.

  In a preferred embodiment of the present invention, the conductive layer has a light emitting element arrangement concave side surface connecting portion formed on the light emitting element arrangement concave side surface.

  In a preferred embodiment of the present invention, a light emitting element sealing resin portion is provided which fills the light emitting element disposing recess and covers the light emitting element and transmits light from the light emitting element.

  In a preferred embodiment of the present invention, the light emitting element sealing resin portion includes a first light emitting element sealing resin portion that directly covers the light emitting element, and the main surface with respect to the first light emitting element sealing resin portion. And a second light emitting element sealing resin portion provided on the side facing.

  In preferable embodiment of this invention, the surface which faces the same side as the said main surface of the said 2nd light emitting element sealing resin part is flat.

  According to the present invention, according to the present embodiment, the electronic element can be more reliably protected by arranging the electronic element in the element arranging recess. The electrode of the electronic element disposed on the side where the main surface faces is appropriately conducted to the electrode pad via the sealing resin portion connecting portion. Therefore, the function of the electronic element can be more appropriately exhibited.

  Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

It is a top view which shows the electronic device based on 1st Embodiment of this invention. It is sectional drawing which follows the II-II line | wire of FIG. FIG. 2 is an enlarged cross-sectional view of a main part showing the electronic device of FIG. 1. It is principal part sectional drawing which shows the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is sectional drawing which shows an example of the manufacturing method of the electronic device of FIG. It is a top view which shows the electronic device based on 2nd Embodiment of this invention. It is sectional drawing which follows the XVI-XVI line | wire of FIG. It is sectional drawing which follows the XVII-XVII line of FIG. It is sectional drawing which shows the electronic device based on 3rd Embodiment of this invention.

  Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

  1 to 4 show an electronic device according to a first embodiment of the present invention. The electronic device A1 of this embodiment includes a substrate 1, an insulating layer 2, a conductive layer 3, a seal chip 4, a seal chip electrode pad 341, a sealing resin portion 6, and an electronic element 71. FIG. 1 is a plan view showing the electronic apparatus A1. 2 is a cross-sectional view taken along line II-II in FIG. FIG. 3 is an enlarged cross-sectional view of a main part showing the electronic device A1. FIG. 4 is a cross-sectional view of a main part showing the electronic device A1.

  The substrate 1 is made of a single crystal of a semiconductor material. In the present embodiment, the substrate 1 is made of Si single crystal. The material of the board | substrate 1 is not limited to Si, For example, SiC may be sufficient. The thickness of the substrate 1 is, for example, 200 to 550 μm. An electronic element 71 is disposed on the substrate 1.

  The substrate 1 has a main surface 111 and a back surface 112.

  The main surface 111 faces one side in the thickness direction. The main surface 111 is flat. The main surface 111 is orthogonal to the thickness direction. The main surface 111 is a (100) plane or a (110) plane. In the present embodiment, the main surface 111 is a (100) plane.

  The back surface 112 faces the other side in the thickness direction. That is, the back surface 112 and the main surface 111 face opposite to each other. The back surface 112 is flat. The back surface 112 is orthogonal to the thickness direction.

  The substrate 1 is provided with a recess 14 for element arrangement.

  The element placement recess 14 is recessed from the main surface 111. An electronic element 71 is disposed in the element disposition recess 14. The depth of the element placement recess 14 (the separation dimension in the thickness direction between the main surface 111 and the element placement recess bottom 142 described later) is, for example, 100 to 300 μm. The element placement recess 14 has a rectangular shape when viewed in the thickness direction. The shape of the element placement recess 14 depends on the adoption of the (100) plane as the main surface 111.

  The element placement recess 14 has an element placement recess side surface 141 and an element placement recess bottom surface 142.

  The element placement recess bottom surface 142 faces the same side as the main surface 111 in the thickness direction of the substrate 1. The element placement recess bottom surface 142 has a rectangular shape when viewed in the thickness direction. An electronic element 71 is arranged on the element arrangement recess bottom surface 142. The element placement recess bottom surface 142 is a surface orthogonal to the thickness direction.

  The element arrangement recess side surface 141 rises from the element arrangement recess bottom surface 142. The element arrangement recess side surface 141 is connected to the element arrangement recess bottom surface 142. The element arrangement concave side surface 141 is inclined with respect to the thickness direction. The angle of the element placement recess side surface 141 with respect to the plane orthogonal to the thickness direction is 55 degrees. This is because the (100) plane is adopted as the main surface 111. The element arrangement recess side surface 141 has four flat surfaces.

The insulating layer 2 is interposed between the conductive layer 3 and the substrate 1. The thickness of the insulating layer 2 is, for example, about 0.1 to 1.0 μm. The insulating layer 2 is made of, for example, SiO ₂ or SiN.

  The insulating layer 2 has a recessed inner surface insulating part 21, a main surface insulating part 26, and a back surface side insulating part 24.

The recess inner surface insulating portion 21 is formed in the element placement recess 14 of the substrate 1. In the present embodiment, the concave portion inner surface insulating portion 21 is formed on all of the element arrangement concave side surface 141 and the element arrangement concave bottom surface 142. The recess inner surface insulating portion 21 is formed by, for example, thermal oxidation. The recess inner surface insulating portion 21 is made of, for example, SiO ₂ .

At least a part of the main surface insulating portion 26 is formed on the main surface 111 of the substrate 1. In the present embodiment, the main surface insulating part 26 covers the entire main surface 111. The main surface insulating part 26 is formed by thermal oxidation. Main surface insulating portion 26 is made of, for example, SiO ₂ . In the present embodiment, the main surface insulating part 26 covers the entire main surface 111.

At least a part of the back surface side insulating portion 24 is formed on the back surface 112 of the substrate 1. In this embodiment, covers all of the main surface 111. The back surface side insulating part 24 is formed by thermal oxidation. The back side insulating part 24 is made of, for example, SiO ₂ . In the present embodiment, the back surface side insulating portion 24 covers the entire back surface 112.

  The seal chip 4 has a seal chip main surface 41 facing the same side as the main surface 111 in the thickness direction and a seal chip back surface 42 facing the opposite side to the seal chip main surface 41. The seal chip 4 covers at least a part of the element placement recess 14 on the main surface 111 side. In the present embodiment, the seal chip 4 covers all the outer edges of the element placement recess 14. The seal tip 4 is made of Si, for example. The seal chip 4 may be integrated with an integrated circuit that performs a part of the function of the electronic device A1.

  The seal tip 4 has a seal tip side surface 43. The seal chip side surface 43 is inclined so as to be located inward in the thickness direction view from the seal chip back surface 42 toward the seal chip main surface 41. When the seal chip main surface 41 and the seal chip back surface 42 are (100) surfaces, the angle formed between the seal chip side surface 43 and the seal chip main surface 41 or the seal chip back surface 42 is 55 degrees. The seal chip 4 is bonded to the main surface 111 with a bonding layer 45. The bonding layer 45 may be a conductive material or an insulating material.

  The seal tip 4 has an opening 46. The opening 46 passes through the seal chip 4. As shown in FIG. 1, the opening 46 includes a light receiving portion 712 of an electronic element 71 described later in the thickness direction view. In the present embodiment, the opening 46 has a rectangular shape as viewed in the thickness direction.

  The thickness of the sealing chip 4 may be a thickness that can appropriately protect the electronic element 71. Further, the thickness of the seal chip 4 may be set for the purpose of adjusting the thickness of the entire electronic device A1 when the thickness of the substrate 1 is fixed.

  The conductive layer 3 is electrically connected to the electronic element 71. The conductive layer 3 is for configuring a current path that inputs and outputs to the electronic element 71. The conductive layer 3 is formed on the substrate 1, the sealing resin portion 6, and the seal chip 4.

  The conductive layer 3 includes a seed layer 31 and a plating layer 32.

  The seed layer 31 is a so-called underlayer for forming a desired plating layer 32. The seed layer 31 is interposed between the substrate 1 and the plating layer 32. The seed layer 31 is made of Cu, for example. The seed layer 31 is formed by sputtering, for example. The thickness of the seed layer 31 is, for example, 1 μm or less.

  The plating layer 32 is formed by electrolytic plating using the seed layer 31. The plating layer 32 is made of, for example, a layer in which Cu, Ti, Ni, Cu, or the like is laminated. The thickness of the plating layer 32 is, for example, about 3 to 10 μm. The plating layer 32 is thicker than the seed layer 31.

  The conductive layer 3 includes a sealing resin portion connecting portion 36, a seal chip side surface connecting portion 37, and a main surface side connecting portion 38.

  The sealing resin part communication part 36 is supported by the sealing resin part 6. The sealing resin part communication part 36 is electrically connected to an electrode 711 of an electronic element 71 described later, and is connected to the electrode 711 in the present embodiment. The sealing resin portion communication portion 36 is formed in a region extending from the electronic element 71 to the edge of the element placement recess 14 in the thickness direction view. The sealing resin part communication part 36 is sandwiched between a first sealing resin part 61 and a second sealing resin part 62 of the sealing resin part 6 described later.

  The seal chip side surface connecting portion 37 is formed on the seal chip side surface 43 of the seal chip 4, and the portion of the conductive layer 3 formed on the seal chip main surface 41 of the seal chip 4 and the main surface side connecting portion 38 are connected. I'm in touch. Further, in the present embodiment, the seal chip side surface connecting portion 37 reaches the end edge of the main surface 111. The seal chip side surface connecting portion 37 is configured by the seed layer 31 and the plating layer 32, but may have a layer structure other than this.

  The main surface side communication portion 38 is formed on the main surface 111 and connects the sealing resin portion communication portion 36 and the seal chip side surface communication portion 37. In the present embodiment, most of the main surface side communication portion 38 is covered with the seal chip 4. In the case where conduction between the main surface side connecting portion 38 and the seal chip 4 is not preferable, an insulating material is selected for the bonding layer 45.

  The seal tip electrode pad 341 is formed on the seal tip main surface 41 of the seal tip 4. The seal chip electrode pad 341 is in contact with the conductive layer 3 and is electrically connected to the electronic element 71. The seal chip electrode pad 341 has a structure in which, for example, a Ni layer, a Pd layer, and an Au layer are stacked in the order close to the seal chip main surface 41 of the seal chip 4. In the present embodiment, the seal chip electrode pad 341 has a rectangular shape.

  The electronic element 71 is mounted on the element arrangement recess bottom surface 142. In the present embodiment, the electronic element 71 is configured as a light receiving element, and includes a plurality of electrodes 711 and a light receiving unit 712. The plurality of electrodes 711 and the light receiving portion 712 are provided in a portion of the electronic element 71 on the side where the main surface 111 faces. The plurality of electrodes 711 are, for example, for outputting an electrical signal from the electronic element 71 to the outside. The light receiving unit 712 is a part that receives light in the photoelectric conversion function.

  The sealing resin portion 6 covers at least a part of the electronic element 71. In the present embodiment, the sealing resin portion 6 includes a first sealing resin portion 61 and a second sealing resin portion 62. The first sealing resin portion 61 covers at least a part of each of the element placement recess bottom surface 142 and the electronic element 71. Further, the first sealing resin portion 61 covers at least a part of the element arrangement recess side surface 141. In the present embodiment, the first sealing resin portion 61 includes substantially all of the element arrangement recess bottom surface 142, almost all of the element arrangement recess side surfaces 141, and the plurality of electrodes 711 and the light receiving portions 712 of the electronic element 71. Covering almost everything. On the other hand, an opening 611 is formed in the first sealing resin portion 61. The opening 611 exposes the plurality of electrodes 711 and the light receiving part 712 from the first sealing resin part 61. Examples of the material of the first sealing resin portion 61 include an epoxy resin, a phenol resin, a polyimide resin, a polybenzoxazole (PBO) resin, and a silicone resin. The first sealing resin portion 61 may be either a translucent resin or a non-translucent resin, but is a non-translucent resin in the present embodiment.

  The second sealing resin portion 62 covers the light receiving portion 712 and transmits light having a wavelength that is a target of the photoelectric conversion function of the electronic element 71. The second sealing resin portion 62 is positioned on the side where the main surface 111 faces the electronic element 71 and is stacked on the first sealing resin portion 61. Further, the second sealing resin portion 62 is formed in a region extending from the element disposition recessed portion 14 to the main surface 111 when viewed in the thickness direction. As shown in FIG. 2, there is a slight step between the upper surface of the first sealing resin portion 61 in the drawing and the main surface 111. On the other hand, the upper surface of the second sealing resin portion 62 in the drawing, that is, the surface facing the same side as the main surface 111 is flat. The material of the second sealing resin portion 62 is preferably a transparent epoxy resin or silicone resin.

  Next, an example of a method for manufacturing the electronic device A1 will be described below with reference to FIGS.

  First, a substrate 1 is prepared as shown in FIG. The substrate 1 is made of a single crystal of a semiconductor material, and in the present embodiment, is made of a Si single crystal. The thickness of the substrate 1 is, for example, about 200 to 550 μm. The substrate 1 is sized to obtain a plurality of substrates 1 of the electronic device A1 described above. That is, the subsequent manufacturing process is based on a technique for manufacturing a plurality of electronic devices A1 in a lump. Although a method of manufacturing one electronic device A1 may be used, in consideration of industrial efficiency, a method of manufacturing a plurality of electronic devices A1 at once is realistic. Although the substrate 1 shown in FIG. 5 is strictly different from the substrate 1 in the electronic device A1, for convenience of understanding, any substrate is represented as the substrate 1.

  The substrate 1 has a main surface 111 and a back surface 112 facing opposite to each other. In the present embodiment, a plane having a crystal orientation (100), that is, a (100) plane is adopted as the main surface 111.

Next, a mask layer made of SiO ₂ is formed by oxidizing the main surface 111, for example. The thickness of this mask layer is, for example, about 0.7 to 1.0 μm.

  Next, the mask layer is patterned by etching, for example. Thereby, for example, a rectangular opening is formed in the mask layer. The shape and size of the opening are set according to the shape and size of the element placement recess 14 to be finally obtained.

  Next, the substrate 1 is subjected to anisotropic etching using, for example, KOH. KOH is an example of an alkaline etching solution that can realize good anisotropic etching for a Si single crystal. As a result, as shown in FIG. 6, the element placement recess 14 is formed in the substrate 1. The element placement recess 14 has an element placement recess side surface 141 and an element placement recess bottom surface 142, and is recessed from the main surface 111. The element placement recess 14 has a rectangular shape in the thickness direction.

  Next, as shown in FIG. 7, the insulating layer 2 is formed on the main surface 111, the element arrangement concave side surface 141, and the element arrangement concave bottom surface 142 and the back surface 112 by thermal oxidation. The insulating layer 2 includes portions that become the concave inner surface insulating portion 21, the back surface insulating portion 24, and the main surface insulating portion 26 described above.

  Next, as shown in FIG. 8, the electronic element 71 is arranged in the element arrangement recess 14. Specifically, the surface opposite to the surface on which the plurality of electrodes 711 and the light receiving portions 712 are formed of the electronic element 71 is bonded to the element disposition recess bottom surface 142 of the element disposition recess 14. The bonding of the electronic element 71 may be either a conductive bonding material or an insulating bonding material.

  Next, as shown in FIG. 9, a first sealing resin portion 61 is formed. For example, a liquid resin material that is a material of the first sealing resin portion 61 is injected into the recess 14 for element arrangement. At this time, the upper surface of the liquid resin material is slightly covered with the upper surface of the electronic element 71. The liquid resin material is cured by a technique such as aging, heating, or ultraviolet irradiation. Thereby, the 1st sealing resin part 61 is obtained.

  Next, an opening 611 is formed in the first sealing resin portion 61 as shown in FIG. The opening 611 is formed by etching the first sealing resin portion 61, for example. Thereby, the first sealing resin portion 61 is provided with an opening 611 that exposes the plurality of electrodes 711 and the light receiving portion 712.

  Next, as shown in FIG. 11, the conductive layer 3 is formed. Formation of the conductive layer 3 includes formation of a seed layer 31 and a plating layer 32. The seed layer 31 is formed, for example, by performing patterning after performing sputtering using Cu. The plating layer 32 is formed by electrolytic plating using the seed layer 31, for example. As a result, a plated layer 32 made of a layer in which, for example, Cu, Ti, Ni, Cu or the like is laminated is obtained. The seed layer 31 and the plating layer 32 form a conductive layer 3 by being laminated. At this time, the conductive layer 3 has a shape including the sealing resin portion connecting portion 36 and the main surface side connecting portion 38 described above.

  Next, as shown in FIG. 12, the second sealing resin portion 62 is formed. The formation of the second sealing resin portion 62 is performed, for example, by applying a liquid transparent resin material on the first sealing resin portion 61 and curing it. Thereby, the 2nd sealing resin part 62 which covers the 1st sealing resin part 61, the some electrode 711 and light-receiving part 712 of the electronic element 71, and the sealing resin part connection part 36 of the conductive layer 3 is obtained. Thereby, the sealing resin portion 6 is completed.

  Next, the seal chip 4 is joined as shown in FIG. Bonding of the sealing chip 4 is performed by applying a conductive or insulating paste constituting the bonding layer 45 to a bonding portion between the sealing chip 4 and a portion of the second sealing resin portion 62 located on the main surface 111, This is done by curing. Positioning is performed so that the light receiving portion 712 is included in the opening 46 in this difference, as viewed in the thickness direction.

  Next, as shown in FIG. 14, a seal chip side surface connecting portion 37 is formed. For example, the seed chip 31 is formed in a region where the seal chip side contact part 37 is to be formed, and the plating layer 32 is laminated using the seed layer 31. In the example shown in the figure, the portion of the conductive layer 3 connected to the seal chip side surface connecting portion 37 is formed on the seal chip main surface 41 of the seal chip 4. As a result, the seal chip side surface contact portion 37 contacts the main surface side contact portion 38. In the present embodiment, the seal chip side surface connecting portion 37 is made to reach the end edge of the main surface 111. This may be realized by collectively cutting the seal chip side surface connecting portion 37 and the substrate 1 after the subsequent steps are finished.

  Next, a seal chip electrode pad 341 is formed. Seal chip electrode pad 341 is formed, for example, by electroless plating a metal such as Ni, Pd, or Au.

  Then, by cutting the substrate 1 with, for example, a dicer, the electronic device A1 shown in FIGS. 1 to 4 is obtained.

  Next, the operation of the electronic device A1 will be described.

  According to the present embodiment, by disposing the electronic element 71 in the element placement recess 14, the element placement recess 14 can be more reliably protected. The electrode 711 of the electronic element 71 disposed on the side to which the main surface 111 faces is appropriately conducted to the seal chip electrode pad 341 via the sealing resin portion connecting portion 36. Therefore, the function of the electronic element 71 can be exhibited more appropriately.

  By selecting the (100) surface as the main surface 111, the element placement recess bottom surface 142 and the element placement recess side surface 141 are finished to a smooth surface having a predetermined relative angle through etching using KOH or the like. Can do.

  When a light receiving element is employed as the electronic element 71, the electrode 711 and the light receiving unit 712 are generally provided on the same side. When the electrode 711 is arranged on the side facing the main surface 111, the light receiving part 712 is similarly arranged on the side facing the main surface 111. Thereby, the light receiving part 712 is desired on the side where the element arranging concave part 14 is opened. Therefore, it is convenient to receive light that is a target of the photoelectric conversion function.

  By providing the opening 46 in the seal chip 4, the light to be received can appropriately reach the light receiving part 712 of the electronic element 71.

  By forming the second sealing resin portion 62 with a material that transmits light to be received by the light receiving portion 712, the light can appropriately reach the light receiving portion 712 through the second sealing resin portion 62. it can.

  By providing the opening 611 in the first sealing resin portion 61, the light can reach the light receiving portion 712 even if the first sealing resin portion 61 is formed of a material that does not transmit light.

  As shown in FIG. 2, the first sealing resin portion 61 covers a portion other than the plurality of electrodes 711 and the light receiving portion 712 in the electronic element 71, so that the upper surface of the first sealing resin portion 61 in the drawing is illustrated. Is at a height relatively close to the upper surface of the electronic element 71 in the drawing and the main surface 111 of the substrate 1. Thereby, the sealing resin part communication part 36 becomes a shape nearer flat. This is suitable for more easily forming the sealing resin portion communication portion 36 and avoiding the disconnection of the sealing resin portion communication portion 36 by mistake.

  Since the sealing resin part communication part 36 is sandwiched between the first sealing resin part 61 and the second sealing resin part 62, disconnection of the sealing resin part communication part 36 can be more reliably prevented. it can.

  Since the upper surface of the second sealing resin portion 62 in FIG. 2 is flat, the seal chip 4 can be more reliably bonded to the second sealing resin portion 62.

  According to the present embodiment, the element placement recess 14 is covered by the seal chip 4. Thereby, the electronic element 71 accommodated in the element arrangement recess 14 can be more appropriately protected by the seal chip 4.

  The seal chip 4 is provided with a seal chip side surface 43. The seal chip side surface 43 is inclined so as to be located inward in the thickness direction view from the seal chip back surface 42 toward the seal chip main surface 41. For this reason, it is possible to easily form the seal chip side surface connecting portion 37 by a technique such as plating. Thereby, the seal chip electrode pad 341 provided on the seal chip main surface 41 of the seal chip 4 and the electronic element 71 can be appropriately arranged.

  The seal tip electrode pad 341 can be provided at a position overlapping the main surface 111 and the element placement recess 14 in plan view. Thereby, the planar view dimension of electronic device A1 can be reduced in size.

  FIG. 4 shows a state in which the electronic device A1 is mounted on the circuit board 8. The seal chip electrode pad 341 is bonded to the mounting pattern 81 of the circuit board 8 by solder 82. A seal chip side surface connecting portion 37 is formed on the seal chip side surface 43 of the seal chip 4. The seal tip side surface connecting portion 37 reaches the end edge of the main surface 111. As a result, the solder 82 has a so-called fillet shape that spreads outward from the edge of the seal chip side surface connecting portion 37, that is, the edge of the main surface 111. In such a form, it is possible to easily determine whether or not the electronic device A1 is appropriately mounted on the circuit board 8 by visually confirming the extent of spread of the solder 82.

  15 to 18 show another embodiment of the present invention. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.

  15 to 17 show an electronic device according to a second embodiment of the present invention. The electronic device A2 of the present embodiment is different from the above-described embodiment in that the configuration of the substrate 1 and the light emitting element 72 are provided. FIG. 15 is a plan view showing the electronic apparatus A2. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG.

  As shown in FIG. 15, in the present embodiment, the element placement recess 14 and the light emitting element placement recess 15 are formed in the substrate 1. The element placement recesses 14 and the light emitting element placement recesses 15 are arranged apart from each other.

  As shown in FIG. 16, the configuration relating to the element placement recess 14 and the electronic element 71 is the same as that of the electronic device A1 described above. However, in the present embodiment, the substrate 1 is thicker than the substrate 1 of the electronic device A1 for the sake of convenience in forming the light emitting element disposition recess 15.

  As shown in FIG. 17, the light emitting element disposition recess 15 is recessed from the main surface 111. A light emitting element 72 is disposed in the light emitting element disposing recess 15. The depth of the light emitting element disposition recess 15 (the separation dimension in the thickness direction between the main surface 111 and the element disposition recess bottom 142 described later) is, for example, 300 to 500 μm. The light emitting element disposing recess 15 has a rectangular shape when viewed in the thickness direction. The shape of the light emitting element placement recess 15 depends on the adoption of the (100) plane as the main surface 111.

  The light emitting element arrangement recess 15 has a light emitting element arrangement recess side surface 151 and a light emitting element arrangement recess bottom surface 152.

  The light emitting element placement recess bottom surface 152 faces the same side as the main surface 111 in the thickness direction of the substrate 1. The light emitting element disposing concave bottom surface 152 has a rectangular shape when viewed in the thickness direction. The light emitting element 72 is disposed on the light emitting element disposing concave bottom surface 152. The recessed portion bottom surface 152 for light emitting element arrangement is a surface orthogonal to the thickness direction.

  The light emitting element placement recess side surface 151 stands up from the light emitting element placement recess bottom surface 152. The light emitting element placement recess side surface 151 is connected to the light emitting element placement recess bottom surface 152. The light emitting element disposition side surface 151 is inclined with respect to the thickness direction. The angle of the concave portion side surface 151 for light emitting element arrangement with respect to the plane orthogonal to the thickness direction is 55 degrees. This is because the (100) plane is adopted as the main surface 111. The recess side surface 151 for light emitting element arrangement has four flat surfaces.

  The conductive layer 3 has an element arrangement recess pad 33 and a light emitting element arrangement recess side surface connecting portion 39.

  The element placement recess pad 33 is formed in the light emitting element placement recess 15, and particularly includes those formed on the light emitting element placement recess bottom 152. The element placement recess pad 33 formed on the light emitting element placement recess bottom surface 152 is used to mount the light emitting element 72 on the light emitting element placement recess bottom surface 152.

  The light emitting element disposing side surface connecting portion 39 is formed on the light emitting element disposing side surface 151 of the light emitting element disposing concave portion 15. The light emitting element disposing recessed part side surface connecting part 39 connects the element disposing recessed part pad 33 and the main surface side connecting part 38.

  The light emitting element 72 emits light having a wavelength that is a target of the photoelectric conversion function of the electronic element 71 as a light receiving element. Examples of such a light emitting element 72 include an LED chip. The light emitting element 72 of the illustrated example is directly mounted on the element arrangement recessed pad 33 and is of a so-called flip chip type. The light emitting element 72 may be of a type that is electrically connected to the conductive layer 3 using a wire.

  The electronic device A2 includes a light emitting element sealing resin portion 63. The light emitting element sealing resin portion 63 is filled in the light emitting element disposing recess 15 and covers the light emitting element 72.

  The light emitting element sealing resin portion 63 includes a first light emitting element sealing resin portion 64 and a second light emitting element sealing resin portion 65. The first light emitting element sealing resin portion 64 covers all of the light emitting elements 72. The 1st light emitting element sealing resin part 64 consists of a material which permeate | transmits the light from the light emitting element 72, for example, is a transparent epoxy resin or silicone resin. The 2nd light emitting element sealing resin part 65 is laminated | stacked on the 1st light emitting element sealing resin part 64, and is the structure similar to the 2nd sealing resin part 62 mentioned above.

  The light emitting element 72 includes the seal chip main part of the seal chip 4 via the element placement recess pad 33 of the conductive layer 3, the light emitting element placement recess side surface contact portion 39, the main surface side contact portion 38 and the seal chip side surface contact portion 37. The seal chip electrode pad 341 formed on the surface 41 is electrically connected.

  As shown in FIG. 15, in the present embodiment, two openings 46 are formed in the seal chip 4. One opening 46 encloses the light receiving portion 712 of the electronic element 71 as viewed in the thickness direction. The other opening 46 includes the light emitting element 72 when viewed in the thickness direction.

  Also in such an embodiment, the functions of the electronic element 71 and the light emitting element 72 can be more appropriately exhibited. Further, by providing the electronic element 71 and the light emitting element 72 as the light receiving elements, the electronic element 71 can detect that the light emitted from the light emitting element 72 is reflected by the object. Thus, the electronic device A2 can be used as a so-called reflective proximity sensor.

  By forming the light emitting element arrangement recess side surface 151 in the light emitting element arrangement depression 15, the light traveling sideways from the light emitting element 72 can be reflected to the side where the light emitting element arrangement depression 15 opens. Is possible. Thereby, more light from the light emitting element 72 can be emitted.

  Since the light emitting element placement recess 15 is deeper than the element placement recess 14, the reflection effect by the light emitting element placement recess side surface 151 described above can be enhanced.

  FIG. 18 shows an electronic device according to a third embodiment of the present invention. The electronic device A3 of this embodiment includes a substrate 1, an insulating layer 2, a conductive layer 3, a main surface electrode pad 343, a sealing resin portion 6, and an electronic element 71. FIG. 18 is a cross-sectional view showing the electronic device A1.

  The substrate 1 is made of a single crystal of a semiconductor material. In the present embodiment, the substrate 1 is made of Si single crystal. The material of the board | substrate 1 is not limited to Si, For example, SiC may be sufficient. The thickness of the substrate 1 is, for example, 200 to 550 μm. An electronic element 71 is disposed on the substrate 1.

  The substrate 1 has a main surface 111 and a back surface 112.

  The main surface 111 faces one side in the thickness direction. The main surface 111 is flat. The main surface 111 is orthogonal to the thickness direction. The main surface 111 is a (100) plane or a (110) plane. In the present embodiment, the main surface 111 is a (100) plane.

  The back surface 112 faces the other side in the thickness direction. That is, the back surface 112 and the main surface 111 face opposite to each other. The back surface 112 is flat. The back surface 112 is orthogonal to the thickness direction.

  The substrate 1 is provided with a recess 14 for element arrangement.

  The element placement recess 14 is recessed from the main surface 111. An electronic element 71 is disposed in the element disposition recess 14. The depth of the element placement recess 14 (the separation dimension in the thickness direction between the main surface 111 and the element placement recess bottom 142 described later) is, for example, 100 to 300 μm. The element placement recess 14 has a rectangular shape when viewed in the thickness direction. The shape of the element placement recess 14 depends on the adoption of the (100) plane as the main surface 111.

  The element placement recess 14 has an element placement recess side surface 141 and an element placement recess bottom surface 142.

  The element placement recess bottom surface 142 faces the same side as the main surface 111 in the thickness direction of the substrate 1. The element placement recess bottom surface 142 has a rectangular shape when viewed in the thickness direction. An electronic element 71 is arranged on the element arrangement recess bottom surface 142. The element placement recess bottom surface 142 is a surface orthogonal to the thickness direction.

  The element arrangement recess side surface 141 rises from the element arrangement recess bottom surface 142. The element arrangement recess side surface 141 is connected to the element arrangement recess bottom surface 142. The element arrangement concave side surface 141 is inclined with respect to the thickness direction. The angle of the element placement recess side surface 141 with respect to the plane orthogonal to the thickness direction is 55 degrees. This is because the (100) plane is adopted as the main surface 111. The element arrangement recess side surface 141 has four flat surfaces.

The insulating layer 2 is interposed between the conductive layer 3 and the substrate 1. The thickness of the insulating layer 2 is, for example, about 0.1 to 1.0 μm. The insulating layer 2 is made of, for example, SiO ₂ or SiN.

  The insulating layer 2 has a recessed inner surface insulating part 21, a main surface insulating part 26, and a back surface side insulating part 24.

The recess inner surface insulating portion 21 is formed in the element placement recess 14 of the substrate 1. In the present embodiment, the concave portion inner surface insulating portion 21 is formed on all of the element arrangement concave side surface 141 and the element arrangement concave bottom surface 142. The recess inner surface insulating portion 21 is formed by, for example, thermal oxidation. The recess inner surface insulating portion 21 is made of, for example, SiO ₂ .

At least a part of the main surface insulating portion 26 is formed on the main surface 111 of the substrate 1. In the present embodiment, the main surface insulating part 26 covers the entire main surface 111. The main surface insulating part 26 is formed by thermal oxidation. Main surface insulating portion 26 is made of, for example, SiO ₂ . In the present embodiment, the main surface insulating part 26 covers the entire main surface 111.

At least a part of the back surface side insulating portion 24 is formed on the back surface 112 of the substrate 1. In this embodiment, covers all of the main surface 111. The back surface side insulating part 24 is formed by thermal oxidation. The back side insulating part 24 is made of, for example, SiO ₂ . In the present embodiment, the back surface side insulating portion 24 covers the entire back surface 112.

  The conductive layer 3 is electrically connected to the electronic element 71. The conductive layer 3 is for configuring a current path that inputs and outputs to the electronic element 71. The conductive layer 3 is formed on the substrate 1 and the sealing resin portion 6.

  The conductive layer 3 includes a seed layer 31 and a plating layer 32.

  The seed layer 31 is a so-called underlayer for forming a desired plating layer 32. The seed layer 31 is interposed between the substrate 1 and the plating layer 32. The seed layer 31 is made of Cu, for example. The seed layer 31 is formed by sputtering, for example. The thickness of the seed layer 31 is, for example, 1 μm or less.

  The plating layer 32 is formed by electrolytic plating using the seed layer 31. The plating layer 32 is made of, for example, a layer in which Cu, Ti, Ni, Cu, or the like is laminated. The thickness of the plating layer 32 is, for example, about 3 to 10 μm. The plating layer 32 is thicker than the seed layer 31.

  The conductive layer 3 includes a sealing resin portion communication portion 36 and a main surface side communication portion 38.

  The sealing resin part communication part 36 is supported by the sealing resin part 6. The sealing resin part communication part 36 is electrically connected to the electrode 711 of the electronic element 71 and is connected to the electrode 711 in the present embodiment. The sealing resin portion communication portion 36 is formed in a region extending from the electronic element 71 to the edge of the element placement recess 14 in the thickness direction view. The sealing resin part communication part 36 is sandwiched between the first sealing resin part 61 and the second sealing resin part 62 of the sealing resin part 6.

  The main surface side communication portion 38 is formed on the main surface 111 and connects the sealing resin portion communication portion 36 and the main surface electrode pad 343.

  Main surface electrode pad 343 is formed on main surface 111. Main surface electrode pad 343 is in contact with conductive layer 3 and is electrically connected to electronic element 71. The main surface electrode pad 343 has a structure in which, for example, a Ni layer, a Pd layer, and an Au layer are stacked in order from the main surface 111. In the present embodiment, the main surface electrode pad 343 has a rectangular shape. The main surface electrode pad 343 is formed on the main surface side connecting portion 38.

  The electronic element 71 is mounted on the element arrangement recess bottom surface 142. In the present embodiment, the electronic element 71 is configured as a light receiving element, and includes a plurality of electrodes 711 and a light receiving unit 712. The plurality of electrodes 711 and the light receiving portion 712 are provided in a portion of the electronic element 71 on the side where the main surface 111 faces. The plurality of electrodes 711 are, for example, for outputting an electrical signal from the electronic element 71 to the outside. The light receiving unit 712 is a part that receives light in the photoelectric conversion function.

  The sealing resin portion 6 covers at least a part of the electronic element 71. In the present embodiment, the sealing resin portion 6 includes a first sealing resin portion 61 and a second sealing resin portion 62. The first sealing resin portion 61 covers at least a part of each of the element placement recess bottom surface 142 and the electronic element 71. Further, the first sealing resin portion 61 covers at least a part of the element arrangement recess side surface 141. In the present embodiment, the first sealing resin portion 61 includes substantially all of the element arrangement recess bottom surface 142, almost all of the element arrangement recess side surfaces 141, and the plurality of electrodes 711 and the light receiving portions 712 of the electronic element 71. Covering almost everything. On the other hand, an opening 611 is formed in the first sealing resin portion 61. The opening 611 exposes the plurality of electrodes 711 and the light receiving part 712 from the first sealing resin part 61. Examples of the material of the first sealing resin portion 61 include an epoxy resin, a phenol resin, a polyimide resin, a polybenzoxazole (PBO) resin, and a silicone resin. The first sealing resin portion 61 may be either a translucent resin or a non-translucent resin, but is a non-translucent resin in the present embodiment.

  The second sealing resin portion 62 covers the light receiving portion 712 and transmits light having a wavelength that is a target of the photoelectric conversion function of the electronic element 71. The second sealing resin portion 62 is positioned on the side where the main surface 111 faces the electronic element 71 and is stacked on the first sealing resin portion 61. Further, the second sealing resin portion 62 is formed in a region extending from the element disposition recessed portion 14 to the main surface 111 when viewed in the thickness direction. As shown in FIG. 2, there is a slight step between the upper surface of the first sealing resin portion 61 in the drawing and the main surface 111. On the other hand, the upper surface of the second sealing resin portion 62 in the drawing, that is, the surface facing the same side as the main surface 111 is flat. The material of the second sealing resin portion 62 is preferably a transparent epoxy resin or silicone resin.

  Also in such an embodiment, the functions of the electronic element 71 and the light emitting element 72 can be more appropriately exhibited. Further, since the seal chip 4 is not provided, the electronic device A3 can be thinned.

  By selecting the (100) surface as the main surface 111, the element placement recess bottom surface 142 and the element placement recess side surface 141 are finished to a smooth surface having a predetermined relative angle through etching using KOH or the like. Can do.

  When a light receiving element is employed as the electronic element 71, the electrode 711 and the light receiving unit 712 are generally provided on the same side. When the electrode 711 is arranged on the side facing the main surface 111, the light receiving part 712 is similarly arranged on the side facing the main surface 111. Thereby, the light receiving part 712 is desired on the side where the element arranging concave part 14 is opened. Therefore, it is convenient to receive light that is a target of the photoelectric conversion function.

  By forming the second sealing resin portion 62 with a material that transmits light to be received by the light receiving portion 712, the light can appropriately reach the light receiving portion 712 through the second sealing resin portion 62. it can.

  By providing the opening 611 in the first sealing resin portion 61, the light can reach the light receiving portion 712 even if the first sealing resin portion 61 is formed of a material that does not transmit light.

  As shown in FIG. 2, the first sealing resin portion 61 covers a portion other than the plurality of electrodes 711 and the light receiving portion 712 in the electronic element 71, so that the upper surface of the first sealing resin portion 61 in the drawing is illustrated. Is at a height relatively close to the upper surface of the electronic element 71 in the drawing and the main surface 111 of the substrate 1. Thereby, the sealing resin part communication part 36 becomes a shape nearer flat. This is suitable for more easily forming the sealing resin portion communication portion 36 and avoiding the disconnection of the sealing resin portion communication portion 36 by mistake.

  Since the sealing resin part communication part 36 is sandwiched between the first sealing resin part 61 and the second sealing resin part 62, disconnection of the sealing resin part communication part 36 can be more reliably prevented. it can.

  The electronic device according to the present invention is not limited to the above-described embodiment. The specific configuration of each part of the electronic device according to the present invention can be varied in design in various ways.

A1 to A3 Electronic device 1 Substrate 111 Main surface 112 Back surface 14 Element placement concave portion 142 Element placement concave portion bottom surface 141 Element placement concave portion side surface 15 Light emitting element placement concave portion 152 Light emitting element placement concave portion bottom surface 151 Light emitting element placement concave portion side surface 2 Insulating layer 21 Recessed inner surface insulating portion 24 Back surface insulating portion 26 Main surface insulating portion 3 Conductive layer 31 Seed layer 32 Plating layer 33 Recessed pad 36 for element arrangement Sealing resin portion connecting portion 37 Seal chip side surface connecting portion 38 Main surface side connecting portion 39 Light Emitting Element Concave Side Contacting Portion 341 Seal Tip Electrode Pad 343 Main Surface Electrode Pad 4 Seal Tip 41 Seal Tip Main Surface 42 Seal Ship Back Surface 43 Seal Chip Side Surface 44 Seal Chip Shield Layer 45 Bonding Layer 46 Opening 6 Sealing Resin Portion 61 1st sealing resin part 611 opening 62 2nd sealing resin part 621 opening 63 Light emitting element sealing Resin portion 64 First light emitting element sealing resin portion 65 Second light emitting element sealing resin portion 71 Electronic element 711 Electrode 712 Light receiving portion 719 Bonding layer 72 Light emitting element 721 Electrode 8 Circuit board 81 Mounting pattern 82 Solder 83 Opening

Claims (40)

A substrate having a main surface and a back surface facing opposite sides in the thickness direction, and made of a semiconductor material;
An electronic element disposed on the substrate;
An electronic device comprising a conductive layer conducting to the electronic element,
The substrate is formed with a concave portion for element arrangement that is recessed from the main surface,
The electronic element is arranged in the concave portion for element arrangement,
A sealing resin portion covering at least a part of the electronic element;
The electronic element has an electrode located on the side to which the main surface faces,
The conductive layer is electrically connected to the electrode of the electronic element, and has a sealing resin portion communication portion supported by the sealing resin portion,
An electronic device comprising an electrode pad positioned on a side to which the main surface faces and conducting to the conductive layer. The element placement recess has an element placement recess bottom surface facing the thickness direction,
The electronic device according to claim 1, wherein the electronic element is disposed on a bottom surface of the element disposing recess.   The electronic device according to claim 2, wherein the element placement recess has an element placement recess side surface that rises from the element placement recess bottom surface.   The electronic device according to claim 3, wherein the bottom surface of the concave portion for element arrangement is a surface orthogonal to the thickness direction.   The electronic device according to claim 4, wherein the side surface of the concave portion for element arrangement is inclined with respect to the thickness direction.   The electronic device according to claim 5, wherein an angle of the element arrangement recess side surface with respect to the element arrangement recess bottom surface is 55 degrees.   The electronic device according to claim 6, wherein the substrate is made of a single crystal of a semiconductor material.   The electronic device according to claim 7, wherein the semiconductor material is Si.   The electronic device according to claim 8, wherein the main surface and the back surface are orthogonal to the thickness direction of the substrate and are flat.   The electronic device according to claim 9, wherein the main surface is a (100) surface.   11. The electronic device according to claim 3, wherein the side surface of the concave portion for element arrangement is connected to the main surface.   The electronic device according to claim 3, wherein the electronic element is a light receiving element having a light receiving portion and performing a photoelectric conversion function of outputting an electric signal corresponding to received light.   The sealing resin portion includes a first sealing resin portion that covers at least a part of the bottom surface of the element arrangement recess and the electronic element, and light having a wavelength that covers the light receiving portion and is a target of the photoelectric conversion function. The electronic device according to claim 12, further comprising a second sealing resin portion to be transmitted.   The electronic device according to claim 13, wherein the first sealing resin portion covers at least a part of the side surface of the concave portion for element arrangement.   The electronic device according to claim 13 or 14, wherein the sealing resin portion communication portion of the conductive layer is sandwiched between the first sealing resin portion and the second sealing resin portion.   The electronic device according to claim 15, wherein the second sealing resin portion is formed in a region extending from the element placement recess to the main surface in the thickness direction view.   The electronic device according to claim 16, wherein a surface of the second sealing resin portion facing the same side as the main surface is flat.   A seal chip main surface facing away from the element placement recess in the thickness direction; and a seal chip back surface facing away from the seal chip principal surface; and the element placement on the main surface side. The electronic device according to claim 12, further comprising a seal chip that covers at least a part of the recess.   The electronic device according to claim 18, wherein the seal tip is made of Si.   The electronic device according to claim 18, wherein the electrode pad is a seal tip electrode pad provided on the seal tip.   The electronic device according to claim 20, wherein the seal chip electrode pad is provided on the seal chip main surface.   The electronic device according to claim 21, wherein the seal chip has an opening that encloses the light receiving portion of the electronic element in a thickness direction view.   The electronic device according to claim 18, wherein the seal chip is bonded to the sealing resin portion. The seal chip has a seal chip side surface that is inclined so as to be located inward in the thickness direction view from the back surface of the seal chip toward the main surface of the seal chip.
The electronic device according to any one of claims 18 to 23, wherein the conductive layer includes a seal chip side surface connecting portion formed on a side surface of the seal chip.   25. The electronic device according to claim 24, wherein the seal chip side surface connecting portion reaches an edge of the main surface.   26. The electronic device according to claim 24, wherein the conductive layer includes a main surface side connecting portion formed on the main surface of the substrate.   The electronic device according to claim 12, wherein the electrode pad is a main surface electrode pad provided on the main surface.   28. The electronic device according to claim 27, wherein the conductive layer includes a main surface side connecting portion formed on the main surface of the substrate.   29. The electronic device according to claim 28, wherein the main surface electrode pad is formed on the main surface side connecting portion. The substrate has a light emitting element disposition recess that is recessed from the main surface, different from the element disposition recess where the electronic element as the light receiving element is disposed.
30. The electronic device according to claim 12, wherein a light emitting element is disposed in the light emitting element disposing recess.   The electronic device according to claim 30, wherein the light emitting element emits light having a wavelength that is a target of the photoelectric conversion function. The light emitting element disposition recess has a light emitting element disposition recess bottom surface facing the thickness direction,
32. The electronic device according to claim 31, wherein the light emission is disposed on the bottom surface of the light emitting element disposing recess.   33. The electronic device according to claim 32, wherein the light emitting element placement recess has a light emitting element placement recess side surface rising from a bottom surface of the light emitting element placement recess.   34. The electronic device according to claim 33, wherein the bottom surface of the concave portion for light emitting element arrangement is a surface orthogonal to the thickness direction.   35. The electronic device according to claim 34, wherein the side surface of the light emitting element disposing concave portion is inclined with respect to the thickness direction.   36. The electronic device according to claim 35, wherein an angle of the side surface of the light emitting element disposition recess with respect to the bottom surface of the light emitting element disposition recess is 55 degrees.   37. The electronic device according to any one of claims 33 to 36, wherein the conductive layer has a light emitting element disposing concave side surface connecting portion formed on the light emitting element disposing concave side surface.   38. The electronic device according to any one of claims 30 to 37, further comprising a light emitting element sealing resin portion that fills the light emitting element arrangement recess and covers the light emitting element and transmits light from the light emitting element.   The light emitting element sealing resin portion includes a first light emitting element sealing resin portion that directly covers the light emitting element, and a second light emission provided on the side of the main surface facing the first light emitting element sealing resin portion. The electronic device according to claim 38, further comprising an element sealing resin portion.   40. The electronic device according to claim 39, wherein a surface of the second light emitting element sealing resin portion facing the same side as the main surface is flat.

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