JP2015192095A - Led light-emitting device and method of manufacturing led light-emitting device - Google Patents

Led light-emitting device and method of manufacturing led light-emitting device Download PDF

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JP2015192095A
JP2015192095A JP2014069660A JP2014069660A JP2015192095A JP 2015192095 A JP2015192095 A JP 2015192095A JP 2014069660 A JP2014069660 A JP 2014069660A JP 2014069660 A JP2014069660 A JP 2014069660A JP 2015192095 A JP2015192095 A JP 2015192095A
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emitting device
led light
hole
electrode
support substrate
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JP6407544B2 (en
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高史 飯野
Takashi Iino
高史 飯野
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PROBLEM TO BE SOLVED: To provide a compact LED light-emitting device ensuring good mountability on a mother board, and advantageous in the aspects of processing man-hour and cost, and to provide a manufacturing method therefor and an LED light-emitting device.SOLUTION: In an LED light-emitting device 10 having an LED element 3 of flip-chip structure mounted on a supporting substrate 2, and a translucent member 5 covering the LED element 3, a through hole 2b is formed in the supporting substrate 2 from the lower surface side, at a position corresponding to the element electrode 3a of the LED element 3, and a conductive member 6 disposed in the through hole 2b is connected directly with the element electrode 3a of the LED element 3.

Description

本発明は構成部材を単純化し、製造を容易化したＬＥＤ発光装置及びその製造方法に関する。   The present invention relates to an LED light-emitting device and a method for manufacturing the same that simplify components and facilitate manufacture.

近年、ＬＥＤ素子は半導体素子であるため、長寿命で優れた駆動特性を有し、さらに小型で発光効率が良く、鮮やかな発光色を有することから、カラー表示装置のバックライトやフラッシュ装置や照明等に広く利用されるようになってきた。   In recent years, since LED elements are semiconductor elements, they have long life and excellent driving characteristics, and are small in size, have high luminous efficiency, and have a bright emission color. Etc. have come to be widely used.

特に近年、ＬＥＤ素子を支持基板に実装した後、支持基板上のＬＥＤ素子を透光部材で封止することによって、小型でマザーボードへの実装性を良くしたＬＥＤ発光装置が提案されている。（例えば特許文献１、特許文献２、特許文献３）   Particularly, in recent years, LED light emitting devices that are small and have good mountability on a mother board are proposed by mounting the LED elements on a support substrate and then sealing the LED elements on the support substrate with a translucent member. (For example, Patent Document 1, Patent Document 2, Patent Document 3)

以下従来の支持基板付のＬＥＤ発光装置に付いて説明する。なお、各従来技術の説明においては、発明の趣旨を逸脱しない範囲で図面を簡素化し、また部品名称の一部についても本願発明にそろえている。
図１３は特許文献１における従来のＬＥＤ発光装置の断面図である。図１３においてＬＥＤ発光装置１００は、樹脂等の絶縁基板１０２の上面側に接続電極１０２ａが、また絶縁基板１０２の下面側には外部電極１０２ｂが設けられ、上面側の接続電極１０２ａと下面側の外部電極１０２ｂとはスルーホール電極１０２ｃによって接続されている。そして上面側に設けられた接続電極１０２ａにはＬＥＤ１０３がワイヤー１０４によって実装され、このＬＥＤ素子１０３を透明樹脂等の透光性部材１０５でモールドしている。また１０６は発光効率を高めるための反射部材である。 A conventional LED light emitting device with a supporting substrate will be described below. In the description of each prior art, the drawings are simplified without departing from the spirit of the invention, and part of part names are also aligned with the present invention.
FIG. 13 is a cross-sectional view of a conventional LED light emitting device in Patent Document 1. In FIG. In FIG. 13, the LED light emitting device 100 is provided with a connection electrode 102a on the upper surface side of an insulating substrate 102 such as resin, and an external electrode 102b on the lower surface side of the insulating substrate 102, and the connection electrode 102a on the upper surface side and the connection electrode 102a on the lower surface side. The external electrode 102b is connected by a through-hole electrode 102c. An LED 103 is mounted on a connection electrode 102a provided on the upper surface side by a wire 104, and the LED element 103 is molded with a translucent member 105 such as a transparent resin. Reference numeral 106 denotes a reflecting member for increasing luminous efficiency.

図１４は特許文献２における従来のＬＥＤ発光装置の断面図である。図１４においてＬＥＤ発光装置２００は、絶縁基板２０２の上面側に接続電極２０２ａが、また絶縁基板２０２の下面側には外部電極２０２ｂが設けられ、上面側の接続電極２０２ａと下面側の外部電極２０２ｂとはスルーホール電極２０２ｃによって接続されている。そして上面側に設けられた接続電極２０２ａにはＬＥＤ素子２０３が素子電極（突起電極）２０３ａによってフリップチップ実装され、このＬＥＤ２０３を透光性部材２０５で封止している。   FIG. 14 is a cross-sectional view of a conventional LED light emitting device in Patent Document 2. 14, the LED light emitting device 200 includes a connection electrode 202a on the upper surface side of the insulating substrate 202 and an external electrode 202b on the lower surface side of the insulating substrate 202. The connection electrode 202a on the upper surface side and the external electrode 202b on the lower surface side. Are connected by a through-hole electrode 202c. An LED element 203 is flip-chip mounted on the connection electrode 202 a provided on the upper surface side by an element electrode (projection electrode) 203 a, and the LED 203 is sealed with a translucent member 205.

さらに特許文献３には、小型で製造コストを低減した、集合方式におけるＬＥＤ発光装置の製造方法が記載されている。図１５、図１６は特許文献３に記載されたＬＥＤ発光装置の製造方法を示す工程図であり、図１５は前工程の工程（ａ）〜（ｃ）を示し、図１６は後工程の工程（ｄ）〜（ｆ）を示している。なお、集合方式なので大判の集合支持基板を用いて多数のＬＥＤ発光装置を同時に製造しているが、図面の記載を解り易くするために、２個のＬＥＤ発光装置を同時に製造する事例について説明する。   Furthermore, Patent Document 3 describes a method for manufacturing an LED light-emitting device in a collective system that is small in size and reduced in manufacturing cost. 15 and 16 are process diagrams showing a method of manufacturing the LED light emitting device described in Patent Document 3, FIG. 15 shows steps (a) to (c) of the previous step, and FIG. 16 is a step of the subsequent step. (D)-(f) is shown. In addition, since it is a collective system, many LED light-emitting devices are manufactured simultaneously using the large-sized collective support board, However, In order to make the description of drawing easy to understand, the example which manufactures two LED light-emitting devices simultaneously is demonstrated. .

まず図１５により前工程を説明する。図１５において工程（ａ）は部材集結工程であり、上面側にＬＥＤ発光装置３００の２個分の接続電極３０２ａを形成した大判支持基板３０２Ｌと、２個のＬＥＤ素子３０３を形成した大判のサファイヤ基板３０３Ｌが用意されている。上記工程において大判支持基板３０２Ｌに設けられた各接続電極３０２ａは、２個のＬＥＤ素子３０３の各素子電極３０３ａの位置に対応しており、また形状は素子電極３０３ａと同じか、または少し大型に形成されている。   First, the previous process will be described with reference to FIG. In FIG. 15, step (a) is a member assembling step, and a large-sized sapphire with two large-sized support substrates 302L on which two connection electrodes 302a of the LED light emitting device 300 are formed and two LED elements 303 are formed on the upper surface side. A substrate 303L is prepared. In the above process, each connection electrode 302a provided on the large-sized support substrate 302L corresponds to the position of each element electrode 303a of the two LED elements 303, and the shape is the same as or slightly larger than the element electrode 303a. Is formed.

工程（ｂ）はＬＥＤ素子接着工程であり、大判支持基板３０２Ｌと大判のサファイヤ基板３０３Ｌとを重ね合わせて各ＬＥＤ素子３０３の各素子電極３０３ａと大判支持基板３０２Ｌの各接続電極３０２ａを位置合わせして接着する。なお、接着方法としては、半田接着や共晶接合により行う。工程（ｃ）は貫通孔形成工程であり、大判支持基板３０２Ｌの下面側より、各接続電極３０２ａに対応する位置にスルーホールとなる貫通孔３０２ｄを形成する。この貫通孔３０２ｄの形成はレーザー加工やエッチング加工によって行う。   Step (b) is an LED element bonding step, in which the large support substrate 302L and the large sapphire substrate 303L are overlapped to align the element electrodes 303a of the LED elements 303 and the connection electrodes 302a of the large support substrate 302L. And glue. The bonding method is solder bonding or eutectic bonding. Step (c) is a through hole forming step, in which through holes 302d serving as through holes are formed at positions corresponding to the connection electrodes 302a from the lower surface side of the large format support substrate 302L. The through hole 302d is formed by laser processing or etching processing.

次に図１６により後工程を説明する。図１６において工程（ｄ）は電極形成工程であり、大判支持基板３０２Ｌに設けた貫通孔３０２ｄに導電部材３０６を配設してスルーホール電極３０６ｃと外部電極３０６ｂを形成する。これにより大判支持基板３０２Ｌの上面に設けられた接続電極３０２ａがスルーホール電極３０６ｃによって外部電極３０６ｂに接続されることにより、ＬＥＤ素子３０３の素子電極３０３ａと外部電極３０６ｂとが接続されて電極引出状態となる。   Next, the post-process will be described with reference to FIG. In FIG. 16, step (d) is an electrode forming step, in which a conductive member 306 is disposed in a through hole 302d provided in the large format support substrate 302L to form a through-hole electrode 306c and an external electrode 306b. As a result, the connection electrode 302a provided on the upper surface of the large-sized support substrate 302L is connected to the external electrode 306b by the through-hole electrode 306c, so that the element electrode 303a and the external electrode 306b of the LED element 303 are connected and the electrode is drawn out. It becomes.

工程（ｅ）はサファイヤ基板剥離工程であり、大判のサファイヤ基板３０３Ｌをレーザーリフトオフにより剥離する。工程（ｆ）は切断分離工程であり、工程（ｅ）に点線で示すＬＥＤ素子３０３間の切断線Ｓにおいてダイシングすることにより、個々のＬＥＤ発光装置３００を完成させる。   Step (e) is a sapphire substrate peeling step, in which a large sapphire substrate 303L is peeled off by laser lift-off. Step (f) is a cutting / separating step, and each LED light emitting device 300 is completed by dicing at a cutting line S between the LED elements 303 indicated by a dotted line in step (e).

特開２００３−２３１８３号公報JP 2003-23183 A 特開２００７−１０３９７８号公報JP 2007-103978 A 特開２０１０−１０３１８６号公報JP 2010-103186 A

しかし、特許文献１や特許文献２に記載されたＬＥＤ発光装置では、支持基板として両面にパタ−ン電極を有し、この両面電極基板をスルーホール電極で接続しているため、支持基板の製造がウエハープロセスでの加工となるため、工数が複雑でコストが掛るという問題がある。   However, the LED light-emitting devices described in Patent Document 1 and Patent Document 2 have pattern electrodes on both sides as support substrates, and the double-sided electrode substrates are connected by through-hole electrodes. However, there is a problem in that the number of steps is complicated and the cost is high because the processing is performed in the wafer process.

また、特許文献３に基板されたＬＥＤ発光装置は、支持基板として片面にパタ−ン電極を有する片面パターン配線基板を使用しているため、特許文献１や特許文献２に記載されたＬＥＤ発光装置に比べると、支持基板として両面電極基板に変えて片面電極基板を使用しているだけ、加工工数やコストの面で有利だが、やはり、支持基板の上面にＬＥＤ素子の素子電極を接続するための微細なパターンウエハープロセスでの加工を行うので、工数が複雑でコストが掛かるという問題がのこる。   Moreover, since the LED light-emitting device board | substrate by patent document 3 uses the single-sided pattern wiring board which has a pattern electrode on one side as a support substrate, the LED light-emitting device described in patent document 1 or patent document 2 is used. Compared to, the use of a single-sided electrode substrate instead of a double-sided electrode substrate as the support substrate is advantageous in terms of processing man-hours and costs, but again, for connecting the element electrode of the LED element to the upper surface of the support substrate Since processing is performed with a fine pattern wafer process, the man-hours are complicated and costly.

さらに特許文献１、特許文献２、特許文献３に記載されたＬＥＤ発光装置では、支持基板を片面または両面電極を有するパターン配線基板（銅張り基板等）を用いているため、基板材料として絶縁基板の使用が条件となる。すなわち放熱性の良い金属基板を使用する場合にはウエハープロセスにおいて、基板の表面及びスルーホール内面を絶縁処理することが必要となり、ますます加工工数やコストの面で不利となる。   Further, in the LED light-emitting devices described in Patent Document 1, Patent Document 2, and Patent Document 3, since the support substrate is a patterned wiring substrate (such as a copper-clad substrate) having a single-sided or double-sided electrode, an insulating substrate is used as a substrate material. Use of is a condition. That is, when using a metal substrate with good heat dissipation, it is necessary to insulate the surface of the substrate and the inner surface of the through hole in the wafer process, which is further disadvantageous in terms of processing man-hours and costs.

そこで本発明の目的は、上記問題点を解決しようとするものであり、支持基板として基板上面にパタ−ン電極を有さない基板を使用して支持基板の上面に直接ＬＥＤ素子の素子電極を接着し、支持基板とＬＥＤ素子との実装工程において支持基板への貫通孔加工とスルーホール電極の外部電極の形成を行うことによって、ＬＥＤ素子の素子電極と支持基板の下面の外部電極とを接続する電極引出を行うことにより、小型でマザーボードへの実装性が良く、加工工数やコストの面で有利なＬＥＤ発光装置、及びその製造方法及びＬＥＤ発光装置を提供することである。   Therefore, an object of the present invention is to solve the above-mentioned problems, and using a substrate having no pattern electrode on the upper surface of the substrate as a supporting substrate, the element electrode of the LED element is directly formed on the upper surface of the supporting substrate. Connect the element electrode of the LED element and the external electrode on the lower surface of the support substrate by bonding and forming the through hole in the support substrate and forming the external electrode of the through-hole electrode in the mounting process of the support substrate and the LED element It is an object of the present invention to provide an LED light-emitting device that is small in size, has good mountability on a mother board, and is advantageous in terms of processing man-hours and costs, a manufacturing method thereof, and an LED light-emitting device.

上記目的を達成するため本発明におけるＬＥＤ発光装置の構成は、支持基板上に実装されたフリップチップ構造のＬＥＤ素子と、前記ＬＥＤ素子を被覆した透光性部材を有するＬＥＤ発光装置において、前記支持基板には下面側より、前記ＬＥＤ素子の接続電極に対応する位置に貫通孔が形成されており、前記貫通孔内に配設された導電部材と、前記ＬＥＤ素子の素子電極とが直接接続していることを特徴とする。   In order to achieve the above object, the LED light-emitting device according to the present invention includes a flip-chip LED element mounted on a support substrate and a LED light-emitting device having a translucent member covering the LED element. A through hole is formed in the substrate at a position corresponding to the connection electrode of the LED element from the lower surface side, and the conductive member disposed in the through hole and the element electrode of the LED element are directly connected. It is characterized by.

上記構成によると、支持基板として基板上面にパタ−ン電極を有さない基板を使用し、この支持基板の上面に直接ＬＥＤ素子の素子電極を接着剤により仮接着した状態において、支持基板への貫通孔の加工と貫通孔への導電部材を配設することによって、導電部材をＬＥＤ素子の素子電極に直接接続して、支持基板の裏面に引出すことができるため、支持基板に対する素子電極接続用のパターン配線や、スルーホール電極の形成を必要としないシンプル構成のＬＥＤ発光装置を提供できる。   According to the above configuration, a substrate that does not have a pattern electrode on the upper surface of the substrate is used as the support substrate, and the element electrode of the LED element is temporarily bonded directly to the upper surface of the support substrate with an adhesive. By connecting the conductive member directly to the element electrode of the LED element and drawing it out to the back surface of the support substrate by processing the through-hole and arranging the conductive member to the through-hole, for connecting the element electrode to the support substrate Therefore, it is possible to provide an LED light emitting device having a simple configuration that does not require the formation of the pattern wiring and the through-hole electrode.

前記貫通孔内に配設された導電部材は、銅下地メッキ層であるとよい。   The conductive member disposed in the through hole may be a copper base plating layer.

前記支持基板は絶縁性基板であり、前記ＬＥＤ素子の素子電極は、前記支持基板の上面の絶縁層上に配設されており、前記貫通孔内に配設された導電部材と直接接続しているとよい。   The support substrate is an insulating substrate, and the element electrode of the LED element is disposed on the insulating layer on the upper surface of the support substrate, and is directly connected to the conductive member disposed in the through hole. It is good to be.

前記支持基板は導電性材質の導電性基板であり、前記貫通孔の内面及び前記支持基板の下面に絶縁層が形成され、前記通孔の内面及び前記支持基板の下面に形成された絶縁層上に導電部材が配設されているとよい。   The support substrate is a conductive substrate made of a conductive material, and an insulating layer is formed on the inner surface of the through hole and the lower surface of the support substrate, and on the insulating layer formed on the inner surface of the through hole and the lower surface of the support substrate. It is preferable that a conductive member is disposed on the surface.

上記構成によれば、支持基板として熱伝導性の良い金属基板を使用し、予め金属基板に絶縁処理やパターン配線加工を行わずに、実装プロセスにおいて金属基板の絶縁処理や引出電極形成を行うことによって、放熱性が良く、小型で加工工数やコストの面で有利なＬＥＤ発光装置を提供できる。   According to the above configuration, a metal substrate having good thermal conductivity is used as the support substrate, and the metal substrate is subjected to insulation processing and extraction electrode formation in the mounting process without performing insulation treatment or pattern wiring processing on the metal substrate in advance. Therefore, it is possible to provide an LED light emitting device that has good heat dissipation, is small, and is advantageous in terms of processing steps and cost.

上記目的を達成するため本発明におけるＬＥＤ発光装置の製造方法は、支持基板の上面にフリップチップ構造のＬＥＤ素子の素子電極を接着するＬＥＤ素子接着工程と、前記支持基板の上面に接着されたＬＥＤ素子を含む前記支持基板の上面を透光性部材で被覆する封止工程と、前記支持基板の下面側より、前記ＬＥＤ素子の素子電極に対応する位置に貫通孔を形成する貫通孔形成工程と、前記支持基板に形成した貫通孔に導電部材を配設して、前記ＬＥＤ素子の素子電極を前記支持基板の下面側に導通させる電極形成工程を有することを特徴とする。   In order to achieve the above object, an LED light emitting device manufacturing method according to the present invention includes an LED element bonding step of bonding an element electrode of an LED element having a flip chip structure to the upper surface of a support substrate, and an LED bonded to the upper surface of the support substrate. A sealing step of covering the upper surface of the support substrate including elements with a translucent member, and a through hole forming step of forming a through hole at a position corresponding to the element electrode of the LED element from the lower surface side of the support substrate; An electrode forming step is provided, in which a conductive member is disposed in a through hole formed in the support substrate, and the element electrode of the LED element is conducted to the lower surface side of the support substrate.

上記製造方法によれば、支持基板として基板上面にパタ−ン電極を有さない基板を使用し、この支持基板の上面に直接ＬＥＤ素子の素子電極を接着剤により仮接着した状態において支持基板の上面を透光性部材で封止して、支持基板とＬＥＤ素子との固定力を保ち、その後の貫通孔の加工や引出電極の形成を容易にしている。   According to the above manufacturing method, a substrate that does not have a pattern electrode on the upper surface of the substrate is used as the supporting substrate, and the element electrode of the LED element is temporarily bonded directly to the upper surface of the supporting substrate with an adhesive. The upper surface is sealed with a translucent member to maintain the fixing force between the support substrate and the LED element, thereby facilitating subsequent processing of the through hole and formation of the extraction electrode.

前記電極形成工程において、前記支持基板の下面に外部電極を同時に形成すること良い。   In the electrode forming step, an external electrode may be simultaneously formed on the lower surface of the support substrate.

前記支持基板は導電性材質による導電性基板であり、前記貫通孔形成工程と前記電極形成工程との間に、前記導電性基板の貫通孔の内面及び下面に絶縁層を形成する絶縁層形成工程をさらに有すると良い。   The support substrate is a conductive substrate made of a conductive material, and an insulating layer forming step of forming an insulating layer on an inner surface and a lower surface of the through hole of the conductive substrate between the through hole forming step and the electrode forming step. It is good to have further.

上記製造方法によれば、支持基板として熱伝導性の良い金属基板を使用し、予め金属基板に絶縁処理やパターン配線加工を行わずに、実装プロセスにおいて金属基板の絶縁処理や引出電極形成を行うことによって、放熱性が良く、小型で加工工数やコストの面で有利なＬＥＤ発光装置を提供できる。   According to the above manufacturing method, a metal substrate having good thermal conductivity is used as the support substrate, and the metal substrate is subjected to insulation treatment and lead electrode formation in the mounting process without performing insulation treatment or pattern wiring processing on the metal substrate in advance. As a result, it is possible to provide an LED light emitting device that has good heat dissipation, is small, and is advantageous in terms of processing steps and cost.

前記絶縁層形成工程は、前記導電性基板の貫通孔の内面及び下面に絶縁部材を充填する絶縁部材充填工程と、前記貫通孔内の絶縁部材における前記ＬＥＤ素子の素子電極に対応する位置に、絶縁貫通孔を形成する絶縁貫通孔形成工程とを有すると良い。   In the insulating layer forming step, an insulating member filling step of filling the inner surface and the lower surface of the through hole of the conductive substrate with an insulating member, and a position corresponding to the element electrode of the LED element in the insulating member in the through hole, It is preferable to have an insulating through hole forming step for forming an insulating through hole.

上記製造方法によれば、導電性基板の貫通孔の内面に絶縁層としての絶縁貫通孔を容易に形成することができる。   According to the manufacturing method, an insulating through hole as an insulating layer can be easily formed on the inner surface of the through hole of the conductive substrate.

前記透光性部材が蛍光樹脂であると良い。   The translucent member is preferably a fluorescent resin.

上記の如く本発明のＬＥＤ発光装置は、支持基板として基板上面にパタ−ン電極を有さない基板を使用し、この支持基板の上面に直接ＬＥＤ素子の素子電極を接着剤により仮接着した状態において、支持基板への貫通孔の加工と貫通孔への導電部材を配設することによって、導電部材をＬＥＤ素子の素子電極に直接接続して、支持基板の裏面に引出すことができるため、支持基板に対する素子電極接続用のパターン配線や、スルーホール電極の形成を必要としないシンプル構成のＬＥＤ発光装置を提供できる。   As described above, the LED light-emitting device of the present invention uses a substrate that does not have a pattern electrode on the upper surface of the substrate as the support substrate, and temporarily bonds the element electrodes of the LED elements directly to the upper surface of the support substrate with an adhesive. In the process of forming a through hole in the support substrate and disposing a conductive member to the through hole, the conductive member can be directly connected to the element electrode of the LED element and pulled out to the back surface of the support substrate. It is possible to provide an LED light emitting device having a simple configuration that does not require the formation of a pattern wiring for connecting an element electrode to a substrate and formation of a through-hole electrode.

上記の如く本発明の製造方法によれば、支持基板として基板上面にパタ−ン電極を有さない基板を使用し、この支持基板の上面に直接ＬＥＤ素子の素子電極を接着剤により仮接着した状態において支持基板の上面を透光性部材で封止して、支持基板とＬＥＤ素子との固定力を保ち、その後の貫通孔の加工や引出電極の形成を容易にしている。   As described above, according to the manufacturing method of the present invention, a substrate having no pattern electrode on the upper surface of the substrate is used as the support substrate, and the element electrodes of the LED elements are temporarily bonded directly to the upper surface of the support substrate with an adhesive. In this state, the upper surface of the support substrate is sealed with a translucent member to maintain the fixing force between the support substrate and the LED element, thereby facilitating subsequent processing of the through hole and formation of the extraction electrode.

本発明の第１実施形態におけるＬＥＤ発光装置の断面図である。It is sectional drawing of the LED light-emitting device in 1st Embodiment of this invention. 図１に示すＬＥＤ発光装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the LED light-emitting device shown in FIG. 本発明の第２実施形態におけるＬＥＤ発光装置の断面図である。It is sectional drawing of the LED light-emitting device in 2nd Embodiment of this invention. 図３に示すＬＥＤ発光装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the LED light-emitting device shown in FIG. 図３に示すＬＥＤ発光装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the LED light-emitting device shown in FIG. 本発明の第３実施形態におけるＬＥＤ発光装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the LED light-emitting device in 3rd Embodiment of this invention. 本発明の第４実施形態におけるＬＥＤ発光装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the LED light-emitting device in 4th Embodiment of this invention. 本発明の第４実施形態におけるＬＥＤ発光装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the LED light-emitting device in 4th Embodiment of this invention. 本発明の第３実施形態におけるＬＥＤ発光装置の断面図である。It is sectional drawing of the LED light-emitting device in 3rd Embodiment of this invention. 本発明の第４実施形態におけるＬＥＤ発光装置の断面図である。It is sectional drawing of the LED light-emitting device in 4th Embodiment of this invention. 本発明の第５実施形態におけるＬＥＤ発光装置の断面図である。It is sectional drawing of the LED light-emitting device in 5th Embodiment of this invention. 本発明の第６実施形態におけるＬＥＤ発光装置の断面図である。It is sectional drawing of the LED light-emitting device in 6th Embodiment of this invention. 従来のＬＥＤ発光装置の断面図である。It is sectional drawing of the conventional LED light-emitting device. 従来のＬＥＤ発光装置の断面図である。It is sectional drawing of the conventional LED light-emitting device. 従来のＬＥＤ発光装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the conventional LED light-emitting device. 従来のＬＥＤ発光装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the conventional LED light-emitting device.

以下図面により、本発明の実施形態を説明する。図１〜図２は本発明の第１実施形態におけるＬＥＤ発光装置を示し、図１は本発明の第１実施形態におけるＬＥＤ発光装置１０の断面図、図２は図１に示すＬＥＤ発光装置１０の製造方法を示す工程図である。   Embodiments of the present invention will be described below with reference to the drawings. 1 to 2 show an LED light emitting device according to a first embodiment of the present invention, FIG. 1 is a cross-sectional view of the LED light emitting device 10 according to the first embodiment of the present invention, and FIG. 2 shows the LED light emitting device 10 shown in FIG. It is process drawing which shows this manufacturing method.

（第１実施形態のＬＥＤ発光装置構成）
図１に示すＬＥＤ発光装置１０の断面図において、支持基板２は樹脂基板やセラミック基板等の絶縁基板であり、支持基板２の上面側に実装されたＬＥＤ素子３は透光性樹脂や蛍光樹脂等の透光性部材５によって封止されており、ＬＥＤ素子３の素子電極３ａは支持基板２の貫通孔２ｄに配設された導電部材６によって形成された、スルーホール電極６ｃと外部電極６ｂとによって支持基板２の下面に引き出されている。上記のごとく本発明におけるＬＥＤ発光装置１０は支持基板２として基板上面にパタ−ン電極を有さない基板を使用しながら、ＬＥＤ素子３の素子電極３ａと支持基板２の貫通孔２ｄに配設された導電部材６とが直接接続されることによって、ＬＥＤ素子３の素子電極３ａが支持基板２の下面側の外部電極６ｂに安定して接続されている。 (Configuration of LED light emitting device of the first embodiment)
In the cross-sectional view of the LED light emitting device 10 shown in FIG. 1, the support substrate 2 is an insulating substrate such as a resin substrate or a ceramic substrate, and the LED element 3 mounted on the upper surface side of the support substrate 2 is a translucent resin or a fluorescent resin. The element electrode 3a of the LED element 3 is formed by the conductive member 6 disposed in the through hole 2d of the support substrate 2, and the through-hole electrode 6c and the external electrode 6b are sealed. To the lower surface of the support substrate 2. As described above, the LED light emitting device 10 according to the present invention is disposed in the element electrode 3a of the LED element 3 and the through-hole 2d of the support substrate 2 while using the substrate having no pattern electrode on the upper surface of the substrate as the support substrate 2. When the conductive member 6 is directly connected, the element electrode 3 a of the LED element 3 is stably connected to the external electrode 6 b on the lower surface side of the support substrate 2.

（第１実施形態のＬＥＤ発光装置の製造方法）
次に図２によりＬＥＤ発光装置１０の製造方法を説明する。図２はＬＥＤ発光装置１０の各製造工程を示す工程図である。工程（ａ）はＬＥＤ素子接着工程であり、絶縁基板である支持基板２の絶縁面にＬＥＤ素子３の素子電極３ａを接着剤７によって接着する。このＬＥＤ素子接着工程は、支持基板２とＬＥＤ素子３の素子電極３ａとの位置決め固定を行うための仮固定を目的としている。工程（ｂ）は封止工程であり、支持基板２の上面にＬＥＤ素子３を透光性部材５によって封止し、支持基板２にＬＥＤ素子３を強固に保持する工程である。 (Manufacturing method of LED light-emitting device of 1st Embodiment)
Next, a method for manufacturing the LED light emitting device 10 will be described with reference to FIG. FIG. 2 is a process diagram showing each manufacturing process of the LED light emitting device 10. Step (a) is an LED element bonding step, in which the element electrode 3 a of the LED element 3 is bonded to the insulating surface of the support substrate 2, which is an insulating substrate, with an adhesive 7. This LED element adhesion step is intended for temporary fixing for positioning and fixing the support substrate 2 and the element electrode 3a of the LED element 3. Step (b) is a sealing step, in which the LED element 3 is sealed on the upper surface of the support substrate 2 by the translucent member 5, and the LED element 3 is firmly held on the support substrate 2.

工程（ｃ）は貫通孔形成工程であり、支持基板２の下面側よりＬＥＤ素子３の素子電極３ａに対応する位置に貫通孔２ｄを形成する。この貫通孔２ｄの形成は通常のレーザー加工やエッチング加工によって行い、支持基板２の所定の場所にＬＥＤ素子３の素子電極３ａより少し大きい形状の貫通孔２ｄを形成するとともに、素子電極３ａの底面を支持基板２の上面に接着していた接着剤７を除去している。さらに素子電極３ａの底面周辺に被覆されている透光性部材５の一部も除去して凹部５ａを形成すると後述する電気的接続が良くなる。また、この貫通孔形成工程が、支持基板２とＬＥＤ素子３とが透光性部材５の封止によって強固に保持された状態で行われる。   Step (c) is a through-hole forming step, in which a through-hole 2 d is formed at a position corresponding to the element electrode 3 a of the LED element 3 from the lower surface side of the support substrate 2. The through-hole 2d is formed by ordinary laser processing or etching, and a through-hole 2d having a shape slightly larger than the element electrode 3a of the LED element 3 is formed at a predetermined location on the support substrate 2, and the bottom surface of the element electrode 3a is formed. Is removed from the upper surface of the support substrate 2. Furthermore, when a part of the translucent member 5 covered around the bottom surface of the element electrode 3a is also removed to form the recess 5a, electrical connection described later is improved. In addition, this through hole forming step is performed in a state where the support substrate 2 and the LED element 3 are firmly held by sealing the translucent member 5.

工程（ｄ）は電極形成工程であり、支持基板２の貫通孔２ｄ内に導電部材６を配設することによりスルーホール電極６ｃと外部電極６ｂを形成し、ＬＥＤ素子３の素子電極３ａと外部電極６ｂとを電気的に導通させて電極引出をおこなう。なお、この導電部材６の配設は銅下地メッキを施し、必要に応じて銅下地メッキ層の上にニッケルや金、銀等のメッキを行うメッキ法や、導電ペーストの印刷充填による印刷法等により行うことができる。そして支持基板２の貫通孔２ｄの加工においてＬＥＤ素子３の素子電極３ａの底面に付着した接着剤７が除去されており、さらに素子電極３ａの底面周囲に透光性部材５の一部を除去した凹部５ａが形成されることによって、素子電極３ａに対する導電部材６の密着性が良くなることで、安定した電極引出が行われる。   Step (d) is an electrode formation step, in which the through-hole electrode 6c and the external electrode 6b are formed by disposing the conductive member 6 in the through hole 2d of the support substrate 2, and the element electrode 3a of the LED element 3 and the external electrode 6b. The electrode 6b is electrically connected to the electrode 6b to perform electrode extraction. The conductive member 6 is disposed by applying a copper base plating and, if necessary, a plating method of plating nickel, gold, silver or the like on the copper base plating layer, a printing method by printing and filling a conductive paste, or the like. Can be performed. Then, the adhesive 7 attached to the bottom surface of the element electrode 3a of the LED element 3 is removed in the processing of the through hole 2d of the support substrate 2, and a part of the translucent member 5 is removed around the bottom surface of the element electrode 3a. By forming the recessed portion 5a, the adhesion of the conductive member 6 to the element electrode 3a is improved, so that stable electrode extraction is performed.

また、透光性部材５による封止によって支持基板２とＬＥＤ素子３が強固に保持された状態で貫通孔２ｄの加工が行われることにより、貫通孔２ｄの加工応力からＬＥＤ素子３が保護されてダメージを受けることがない。上記工程により図１に示すＬＥＤ発光装置１０が完成する。   Moreover, the LED element 3 is protected from the processing stress of the through hole 2d by processing the through hole 2d in a state where the support substrate 2 and the LED element 3 are firmly held by sealing with the translucent member 5. Will not be damaged. The LED light emitting device 10 shown in FIG. 1 is completed by the above process.

（第２実施形態のＬＥＤ発光装置構成）
次に図３、図４、図５により本発明の第２実施形態のＬＥＤ発光装置を説明する。図３、図４、図５は本発明の第２実施形態におけるＬＥＤ発光装置を示し、図３は本発明の第２実施形態におけるＬＥＤ発光装置２０の断面図、図４、図５は図３に示すＬＥＤ発光装置２０の製造方法を示す工程図である。図３、図４、図５に示す第２実施形態におけるＬＥＤ発光装置２０の構成及び製造方法は図１、図２に示す第１実施形態におけるＬＥＤ発光装置１０と基本的に同じであり、同一または共通する要素には同一番号を付し、重複する説明を省略する。 (Configuration of LED light emitting device of the second embodiment)
Next, an LED light emitting device according to a second embodiment of the present invention will be described with reference to FIGS. 3, 4 and 5 show an LED light emitting device according to a second embodiment of the present invention, FIG. 3 is a cross-sectional view of the LED light emitting device 20 according to the second embodiment of the present invention, and FIGS. It is process drawing which shows the manufacturing method of the LED light-emitting device 20 shown in FIG. The configuration and the manufacturing method of the LED light emitting device 20 in the second embodiment shown in FIGS. 3, 4, and 5 are basically the same as the LED light emitting device 10 in the first embodiment shown in FIGS. Or, common elements are given the same numbers, and redundant descriptions are omitted.

図３に示すＬＥＤ発光装置２０の構成がＬＥＤ発光装置１０と異なるところは、ＬＥＤ発光装置１０が支持基板２として絶縁材料よりなる絶縁基板を用いていたのに対し、ＬＥＤ発光装置２０では支持基板１２として導電性材料である金属基板を用いていることである。このため金属基板である支持基板１２と他の電極との短絡を防止するために、支持基板１２に設けた貫通孔１２ｄの内面と支持基板１２の下面に絶縁層８を形成している。そしてこの絶縁層８で絶縁された貫通孔１２ｄ内に導電部材６を配設してスルーホール電極６ｃと外部電極６ｂを形成し、ＬＥＤ素子３の素子電極３ａを外部電極６ｂに引き出している。上記構成におけるＬＥＤ発光装置２０は金属基板である支持基板１２を通してＬＥＤ素子３の発熱を下方に放熱させることができるため、発光効率の良いＬＥＤ発光装置となる。   3 differs from the LED light emitting device 10 in that the LED light emitting device 10 uses an insulating substrate made of an insulating material as the supporting substrate 2, whereas the LED light emitting device 20 uses a supporting substrate. 12 is using a metal substrate which is a conductive material. Therefore, the insulating layer 8 is formed on the inner surface of the through-hole 12d provided in the support substrate 12 and the lower surface of the support substrate 12 in order to prevent a short circuit between the support substrate 12 which is a metal substrate and other electrodes. The conductive member 6 is disposed in the through hole 12d insulated by the insulating layer 8 to form the through-hole electrode 6c and the external electrode 6b, and the element electrode 3a of the LED element 3 is drawn out to the external electrode 6b. Since the LED light-emitting device 20 in the above configuration can dissipate the heat generated by the LED element 3 downward through the support substrate 12 that is a metal substrate, the LED light-emitting device has high light emission efficiency.

（第２実施形態のＬＥＤ発光装置の製造方法）
次に図４、図５によりＬＥＤ発光装置２０の製造方法を説明する。図４、図５はＬＥＤ発光装置２０の各製造工程を示す工程図であり、図４は前工程、図５は後工程を示す。図４における工程（ａ）のＬＥＤ素子接着工程、工程（ｂ）の封止工程、工程（ｃ）の貫通孔形成工程までは図２に示すＬＥＤ発光装置１０の各製造工程と同じであり、重複する説明を省略する。 (Manufacturing method of LED light-emitting device of 2nd Embodiment)
Next, a method for manufacturing the LED light emitting device 20 will be described with reference to FIGS. 4 and 5 are process diagrams showing each manufacturing process of the LED light emitting device 20, FIG. 4 shows a pre-process, and FIG. 5 shows a post-process. The process up to the LED element bonding step in step (a) in FIG. 4, the sealing step in step (b), and the through hole forming step in step (c) are the same as the manufacturing steps of the LED light emitting device 10 shown in FIG. A duplicate description is omitted.

図５に示す工程（ｄ）と工程（ｅ）は絶縁層形成工程であり、本実施形態においては、工程（ｄ）が貫通孔１２ｄと支持基板１２の下面に絶縁物として絶縁性樹脂８を配設する樹脂充填工程であり、工程（ｅ）が貫通孔１２ｄに充填された絶縁性樹脂８の下面よりＬＥＤ素子３の素子電極３ａに対応する位置に絶縁貫通孔としての樹脂貫通孔８ｄを形成する樹脂貫通孔形成工程である。この樹脂貫通孔８ｄの形成は通常のレーザー加工やエッチング加工によって行い、支持基板１２における貫通孔１２ｄの内周に絶縁層８ｅを形成し、かつＬＥＤ素子３の素子電極３ａの底面の接着剤を削り取って素子電極３ａの底面を露出させる。   Steps (d) and (e) shown in FIG. 5 are insulating layer forming steps. In this embodiment, the step (d) is performed by applying the insulating resin 8 as an insulator on the bottom surface of the through hole 12d and the support substrate 12. In the resin filling step, the resin through hole 8d as an insulating through hole is formed at a position corresponding to the element electrode 3a of the LED element 3 from the lower surface of the insulating resin 8 filled in the through hole 12d. This is a resin through-hole forming step to be formed. The resin through-hole 8d is formed by ordinary laser processing or etching, forming an insulating layer 8e on the inner periphery of the through-hole 12d in the support substrate 12, and applying an adhesive on the bottom surface of the element electrode 3a of the LED element 3. The bottom surface of the device electrode 3a is exposed by scraping.

工程（ｆ）は電極形成工程であり、支持基板１２の貫通孔１２ｄの内周に絶縁層８ｅ形成した樹脂貫通孔８ｄ内に導電部材６を配設することによりスルーホール電極６ｃと外部電極６ｂを形成し、ＬＥＤ素子３の素子電極３ａと外部電極６ｂとを電気的に導通させて電極引出をおこなう。   The step (f) is an electrode forming step, and the through hole electrode 6c and the external electrode 6b are provided by disposing the conductive member 6 in the resin through hole 8d formed in the insulating layer 8e on the inner periphery of the through hole 12d of the support substrate 12. And the element electrode 3a of the LED element 3 and the external electrode 6b are electrically connected to perform electrode extraction.

上記各工程により、図３に示すＬＥＤ発光装置２０が完成する。すなわちＬＥＤ発光装置２０は、支持基板１２として金属基板を用いているが、支持基板１２とＬＥＤ素子３の実装工程のなかで、支持基板１２と各電極とを絶縁する絶縁層を形成することで、配線電極を有さない金属性の支持基板を用いて小型で放熱性が良く、製造コストの易いＬＥＤ発光装置を実現できる。また、支持基板１２の貫通孔１２ｄの内周及び支持基板１２の下面への絶縁層の形成は，本実施形態のような支持基板１２における貫通孔１２ｄに対する絶縁樹脂の充填と、樹脂貫通孔加工による方法以外にも、絶縁性樹脂の塗布と乾燥による方法や、メッキ処理によって絶縁層を形成する方法等があり、何れの方法でも良い。   Through the above steps, the LED light emitting device 20 shown in FIG. 3 is completed. That is, the LED light emitting device 20 uses a metal substrate as the support substrate 12, but by forming an insulating layer that insulates the support substrate 12 and each electrode during the mounting process of the support substrate 12 and the LED element 3. By using a metallic support substrate having no wiring electrode, it is possible to realize an LED light emitting device that is small in size, has good heat dissipation, and is easy to manufacture. In addition, the insulating layer is formed on the inner periphery of the through hole 12d of the support substrate 12 and on the lower surface of the support substrate 12 by filling the through hole 12d in the support substrate 12 as in the present embodiment and processing the resin through hole. In addition to the above method, there are a method of applying and drying an insulating resin, a method of forming an insulating layer by plating, and the like, and any method may be used.

（第３実施形態のＬＥＤ発光装置の製造方法）
次に図６により本発明の第３実施形態におけるＬＥＤ発光装置の製造方法を説明する。図６は図１に示す第１実施形態におけるＬＥＤ発光装置１０の集合基板方式での製造方法を示すものである。工程（ａ）はＬＥＤ素子配設工程であり支持基板として、絶縁性の大判絶縁基板２Ｌの上面に複数のＬＥＤ素子３を位置決めした状態で配設し、各ＬＥＤ素子３の素子電極３ａを接着剤（図示は省略）によって大判絶縁基板２Ｌの上面に仮固定する。工程（ｂ）は封止工程であり、大判絶縁基板２Ｌの上面に配設された複数のＬＥＤ素子３の全体を透光性樹脂５で封止する。工程（ｃ）は貫通孔形成工程であり、大判絶縁基板２Ｌにおける各ＬＥＤ素子３の素子電極３ａに対応する位置に、複数の貫通孔２ｄを形成する。この貫通孔２ｄの形成においては素子電極３ａの底面を大判絶縁基板２Ｌの上面に接着していた接着剤を除去している。さらに素子電極３ａの底面周辺に被覆されている透光性部材５の一部も除去して凹部５ａを形成している。 (Manufacturing method of LED light-emitting device of 3rd Embodiment)
Next, a manufacturing method of the LED light emitting device in the third embodiment of the present invention will be described with reference to FIG. FIG. 6 shows a method of manufacturing the LED light emitting device 10 according to the first embodiment shown in FIG. Step (a) is a step of arranging LED elements. As a support substrate, a plurality of LED elements 3 are arranged on the upper surface of an insulating large-sized insulating substrate 2L, and the element electrodes 3a of the LED elements 3 are bonded. It is temporarily fixed to the upper surface of the large-sized insulating substrate 2L with an agent (not shown). Step (b) is a sealing step, in which the entire plurality of LED elements 3 disposed on the upper surface of the large-sized insulating substrate 2L are sealed with a translucent resin 5. Step (c) is a through hole forming step, in which a plurality of through holes 2d are formed at positions corresponding to the element electrodes 3a of the LED elements 3 on the large-sized insulating substrate 2L. In the formation of the through hole 2d, the adhesive that adheres the bottom surface of the element electrode 3a to the top surface of the large-sized insulating substrate 2L is removed. Further, a part of the translucent member 5 covered around the bottom surface of the element electrode 3a is also removed to form a recess 5a.

工程（ｄ）は電極形成工程であり、大判絶縁基板２Ｌの貫通孔２ｄ内に導電部材６を配設することによりスルーホール電極６ｃと外部電極６ｂを形成し、ＬＥＤ素子３の素子電極３ａと外部電極６ｂとを電気的に導通させて電極引出をおこなう。なお、この導電部材６の配設は大判のマスクを用いてメッキ法や導電ペーストの印刷による充填にて同時に行うことができる。そして支持基板２の貫通孔２ｄの加工においてＬＥＤ素子３の素子電極３ａの底面に形成された接着剤が除去されており、さらに素子電極３ａの底面周囲に透光性部材５の一部を除去した凹部５ａが形成されることによって、素子電極３ａに対する導電部材６の密着性が良くなることで、安定した電極引出が行われる。   The step (d) is an electrode forming step, and the through-hole electrode 6c and the external electrode 6b are formed by disposing the conductive member 6 in the through hole 2d of the large-sized insulating substrate 2L, and the element electrode 3a of the LED element 3 Electrical extraction is performed by electrically connecting the external electrode 6b. The conductive member 6 can be disposed simultaneously by plating using a large-sized mask or by filling with a conductive paste. Then, the adhesive formed on the bottom surface of the element electrode 3a of the LED element 3 is removed in the processing of the through hole 2d of the support substrate 2, and a part of the translucent member 5 is removed around the bottom surface of the element electrode 3a. By forming the recessed portion 5a, the adhesion of the conductive member 6 to the element electrode 3a is improved, so that stable electrode extraction is performed.

工程（ｅ）は切断分離工程であり、工程（ｄ）の電極形成工程図に点線で示す切断線Ｓの位置でダイシングすることによって複数のＬＥＤ発光装置１０を量産するころができる。なお、図６に示す実施形態では図面の記載上、２個のＬＥＤ発光装置の製造方法を示したが、実際の製造方法においては形状の大きい大判絶縁基板２Ｌを使用して１回に数十〜数百個のＬＥＤ発光装置を量産するものである。   Step (e) is a cutting / separating step, and dicing at the position of the cutting line S indicated by the dotted line in the electrode forming step diagram of step (d) enables mass production of a plurality of LED light emitting devices 10. In the embodiment shown in FIG. 6, two LED light emitting device manufacturing methods are shown in the drawing, but in the actual manufacturing method, a large-sized insulating substrate 2L having a large shape is used and several tens of times are used at a time. ~ Mass production of several hundred LED light emitting devices.

（第４実施形態のＬＥＤ発光装置の製造方法）
次に図７、図８により本発明の第４実施形態におけるＬＥＤ発光装置の製造方法を説明する。図７、図８は図３に示す第２実施形態におけるＬＥＤ発光装置２０の集合基板方式での製造方法を示すものである。工程（ａ）はＬＥＤ素子配設工程であり支持基板として、導電性の大判金属基板１２Ｌの上面に複数のＬＥＤ素子３を位置決めした状態で配設し、各ＬＥＤ素子３の素子電極３ａを接着剤によって大判金属基板１２Ｌの上面に仮固定する。工程（ｂ）は封止工程であり、大判金属基板１２Ｌの上面に配設された複数のＬＥＤ素子３の全体を透光性樹脂５で封止する。 (Manufacturing method of LED light-emitting device of 4th Embodiment)
Next, the manufacturing method of the LED light-emitting device in 4th Embodiment of this invention is demonstrated using FIG. 7, FIG. 7 and 8 show a method of manufacturing the LED light emitting device 20 in the second embodiment shown in FIG. Step (a) is an LED element disposing step, in which a plurality of LED elements 3 are positioned on the upper surface of a conductive large-sized metal substrate 12L as a support substrate, and the element electrodes 3a of the LED elements 3 are bonded. Temporarily fixed to the upper surface of the large-sized metal substrate 12L with an agent. Step (b) is a sealing step, in which the whole of the plurality of LED elements 3 disposed on the upper surface of the large-sized metal substrate 12L is sealed with a translucent resin 5.

工程（ｃ）は貫通孔形成工程であり、大判金属基板１２Ｌにおける各ＬＥＤ素子３の素子電極３ａに対応する位置に、複数の貫通孔１２ｄを形成する。この貫通孔１２ｄの形成においては素子電極３ａの底面を大判金属基板１２Ｌの上面に接着していた接着剤を除去している。工程（ｄ）と工程（ｅ）は絶縁層形成工程であり、本実施形態においては、工程（ｄ）が貫通孔１２ｄの内部と大判金属基板１２Ｌの下面に絶縁物として絶縁性樹脂８を配設する樹脂充填工程であり、工程（ｅ）が貫通孔１２ｄに充填された絶縁性樹脂８の下面よりＬＥＤ素子３の素子電極３ａに対応する位置に樹脂貫通孔８ｄを形成する樹脂貫通孔形成工程である。この樹脂貫通孔８ｄの形成は通常のレーザー加工やエッチング加工によって行い、支持基板１２の内周に絶縁層８ｅを形成し、かつＬＥＤ素子３の素子電極３ａの底面を露出させる。   Step (c) is a through hole forming step, in which a plurality of through holes 12d are formed at positions corresponding to the element electrodes 3a of the LED elements 3 on the large-sized metal substrate 12L. In the formation of the through hole 12d, the adhesive that has adhered the bottom surface of the element electrode 3a to the top surface of the large-sized metal substrate 12L is removed. Step (d) and step (e) are insulating layer forming steps. In this embodiment, the step (d) is the step of placing the insulating resin 8 as an insulator inside the through hole 12d and the lower surface of the large-sized metal substrate 12L. A resin filling step for forming a resin through hole in which the step (e) forms a resin through hole 8d at a position corresponding to the element electrode 3a of the LED element 3 from the lower surface of the insulating resin 8 filled in the through hole 12d. It is a process. The resin through-hole 8d is formed by ordinary laser processing or etching processing, an insulating layer 8e is formed on the inner periphery of the support substrate 12, and the bottom surface of the element electrode 3a of the LED element 3 is exposed.

工程（ｆ）は電極形成工程であり、大判金属基板１２Ｌの各貫通孔１２ｄの内周に絶縁層８ｅ形成した樹脂貫通孔８ｄ内に導電部材６を配設することによりスルーホール電極６ｃと外部電極６ｂを形成し、ＬＥＤ素子３の素子電極３ａと外部電極６ｂとを電気的に導通させて電極引出をおこなう。   Step (f) is an electrode forming step, and by disposing the conductive member 6 in the resin through-hole 8d formed in the insulating layer 8e on the inner periphery of each through-hole 12d of the large-sized metal substrate 12L, the through-hole electrode 6c and the outside are formed. The electrode 6b is formed, and the electrode extraction is performed by electrically connecting the element electrode 3a of the LED element 3 and the external electrode 6b.

工程（ｇ）は切断分離工程であり、工程（ｆ）の電極形成工程図に点線で示す切断線Ｓの位置でダイシングすることによって複数のＬＥＤ発光装置２０を量産することができる。なお、図６に示す実施形態では図面の記載上、２個のＬＥＤ発光装置の製造方法を示したが、実際の製造方法においては形状の大きい大判絶縁基板２Ｌを使用して１回に数十〜数百個のＬＥＤ発光装置を量産するものである。   The step (g) is a cutting / separating step, and a plurality of LED light emitting devices 20 can be mass-produced by dicing at the position of the cutting line S indicated by a dotted line in the electrode forming step diagram of the step (f). In the embodiment shown in FIG. 6, two LED light emitting device manufacturing methods are shown in the drawing, but in the actual manufacturing method, a large-sized insulating substrate 2L having a large shape is used and several tens of times are used at a time. ~ Mass production of several hundred LED light emitting devices.

（第３実施形態のＬＥＤ発光装置構成）
次に図９により本発明の第３実施形態のＬＥＤ発光装置構成を説明する。図９は本発明の第３実施形態のＬＥＤ発光装置３０構成を示す断面図である。基本的構成は図１に示す第１実施形態におけるＬＥＤ発光装置１０と同じであり、同一または共通する要素には同一番号を付し、重複する説明を省略する。 (Configuration of LED light emitting device of the third embodiment)
Next, FIG. 9 demonstrates the structure of the LED light-emitting device of 3rd Embodiment of this invention. FIG. 9 is a cross-sectional view showing the configuration of the LED light emitting device 30 according to the third embodiment of the present invention. The basic configuration is the same as that of the LED light emitting device 10 in the first embodiment shown in FIG. 1, and the same or common elements are denoted by the same reference numerals, and redundant description is omitted.

第３実施形態におけるＬＥＤ発光装置３０が第１実施形態におけるＬＥＤ発光装置１０と異なるところは、導電部材の形成方法として支持基板２の貫通孔２ａに形成するスルーホール電極６ｃと、支持基板２の下面に形成する外部電極６ｂとを金属の無電解メッキ層６ａで形成したことであり、本実施形態においては銅のメッキ層を形成している。なお、ＬＥＤ発光装置３０の製造方法については基本的に、図２に示すＬＥＤ発光装置１０の製造方法と同じであり、重複する説明は省略する。すなわち異なるところは工程（ｄ）の電極形成工程における導電部材の配設方法のみである。   The LED light emitting device 30 in the third embodiment is different from the LED light emitting device 10 in the first embodiment in that the through hole electrode 6c formed in the through hole 2a of the support substrate 2 and the support substrate 2 are formed as a conductive member forming method. The external electrode 6b formed on the lower surface is formed of a metal electroless plating layer 6a. In this embodiment, a copper plating layer is formed. In addition, about the manufacturing method of the LED light-emitting device 30, it is the same as the manufacturing method of the LED light-emitting device 10 shown in FIG. 2, and the overlapping description is abbreviate | omitted. That is, the only difference is the arrangement method of the conductive member in the electrode forming step of step (d).

（第４実施形態のＬＥＤ発光装置構成）
次に図１０により本発明の第４実施形態のＬＥＤ発光装置構成を説明する。図１０は本発明の第４実施形態のＬＥＤ発光装置４０構成を示す断面図である。基本的構成は図３に示す第２実施形態におけるＬＥＤ発光装置２０と同じであり、同一または共通する要素には同一番号を付し、重複する説明を省略する。 (LED light emitting device configuration of the fourth embodiment)
Next, FIG. 10 demonstrates the LED light-emitting device structure of 4th Embodiment of this invention. FIG. 10 is a sectional view showing the configuration of the LED light emitting device 40 according to the fourth embodiment of the present invention. The basic configuration is the same as that of the LED light-emitting device 20 in the second embodiment shown in FIG. 3, and the same or common elements are denoted by the same reference numerals and redundant description is omitted.

第４実施形態におけるＬＥＤ発光装置４０が第２実施形態におけるＬＥＤ発光装置２０と異なるところは、導電部材の形成方法として支持基板２の樹脂貫通孔８ｄに形成するスルーホール電極６ｃと、支持基板２の下面に形成する外部電極６ｂとを金属メッキ層で形成したことである。本実施形態においては金属メッキ層として銅下地メッキ層６ａを形成しているが、必要に応じて銅下地メッキ層６ａの上にニッケルや金、銀等の積層メッキを行うとさらに良い。なお、ＬＥＤ発光装置４０の製造方法については基本的に、図４、図５に示すＬＥＤ発光装置２０の製造方法と同じであり、重複する説明は省略する。すなわち異なるところは工程（ｆ）の電極形成工程における導電部材の配設方法のみである。   The LED light emitting device 40 in the fourth embodiment is different from the LED light emitting device 20 in the second embodiment in that the through hole electrode 6c formed in the resin through hole 8d of the support substrate 2 and the support substrate 2 are formed as a method of forming the conductive member. The external electrode 6b formed on the lower surface of the metal plate is formed of a metal plating layer. In the present embodiment, the copper base plating layer 6a is formed as the metal plating layer. However, it is better to perform multilayer plating of nickel, gold, silver or the like on the copper base plating layer 6a as necessary. In addition, about the manufacturing method of the LED light-emitting device 40, it is the same as the manufacturing method of the LED light-emitting device 20 shown in FIG. 4, FIG. 5, and the overlapping description is abbreviate | omitted. That is, the only difference is the arrangement method of the conductive member in the electrode forming step of step (f).

（第５実施形態のＬＥＤ発光装置構成）
次に図１１により本発明の第５実施形態のＬＥＤ発光装置構成を説明する。図１１は本発明の第５実施形態のＬＥＤ発光装置５０構成を示す断面図である。基本的構成は図１に示す第１実施形態におけるＬＥＤ発光装置１０と同じであり、同一または共通する要素には同一番号を付し、重複する説明を省略する。 (Configuration of LED light emitting device of the fifth embodiment)
Next, the configuration of the LED light emitting device according to the fifth embodiment of the present invention will be described with reference to FIG. FIG. 11 is a cross-sectional view showing the configuration of the LED light emitting device 50 according to the fifth embodiment of the present invention. The basic configuration is the same as that of the LED light emitting device 10 in the first embodiment shown in FIG. 1, and the same or common elements are denoted by the same reference numerals, and redundant description is omitted.

第５実施形態におけるＬＥＤ発光装置５０が第１実施形態におけるＬＥＤ発光装置１０と異なるところは、ＬＥＤ発光装置１０では支持基板２として配線電極を有さない絶縁基板を採用していたのに対し、ＬＥＤ発光装置５０では支持基板２として下面側に配線電極２ａを有するパターン配線基板を用いたことである。すなわち支持基板２として下面の配線電極２ａを外部電極６ｂの形状にパターン配線化しておき、工程（ｄ）の電極形成工程において導電部材６を配線電極２ａに積層して形成している。   Where the LED light-emitting device 50 in the fifth embodiment is different from the LED light-emitting device 10 in the first embodiment, the LED light-emitting device 10 employs an insulating substrate having no wiring electrode as the support substrate 2. In the LED light emitting device 50, a pattern wiring board having wiring electrodes 2 a on the lower surface side is used as the support board 2. That is, the wiring electrode 2a on the lower surface of the support substrate 2 is formed into a pattern wiring in the shape of the external electrode 6b, and the conductive member 6 is laminated on the wiring electrode 2a in the electrode forming step of step (d).

上記構成によると外部電極６ｂが配線電極２ａと導電部材６との積層構造となるため、外部電極６ｂの強度が増してＬＥＤ発光装置５０の外部装置への取り付けの信頼性がよくなる。また、ＬＥＤ発光装置５０では支持基板２として特許文献３と同様の片面パターン配線基を使用しているが、パターン化処理が支持基板の裏面に設けられた、あまり精度を必要としない外部電極の簡単なパターン処理なので、特許文献３における、上面側の高い精度を必要とするＬＥＤ素子の実装パターン化処理のような製造プロセスを必要とせず、製造コスト的にも不利になることがない。   According to the above configuration, since the external electrode 6b has a laminated structure of the wiring electrode 2a and the conductive member 6, the strength of the external electrode 6b is increased and the reliability of mounting the LED light emitting device 50 to the external device is improved. Further, the LED light emitting device 50 uses the same single-sided pattern wiring base as that of Patent Document 3 as the support substrate 2, but the patterning process is provided on the back surface of the support substrate, and the external electrode that does not require much accuracy is used. Since it is a simple pattern process, it does not require a manufacturing process like the mounting patterning process of the LED element which requires high accuracy on the upper surface side in Patent Document 3, and there is no disadvantage in manufacturing cost.

（第６実施形態のＬＥＤ発光装置構成）
次に図１２により本発明の第６実施形態のＬＥＤ発光装置構成を説明する。図１２は本発明の第６実施形態のＬＥＤ発光装置６０構成を示す断面図である。基本的構成は図１１に示す第５実施形態におけるＬＥＤ発光装置５０と同じであり、同一または共通する要素には同一番号を付し、重複する説明を省略する。 (Configuration of LED light emitting device of sixth embodiment)
Next, the configuration of the LED light emitting device according to the sixth embodiment of the present invention will be described with reference to FIG. FIG. 12 is a cross-sectional view showing the configuration of the LED light emitting device 60 according to the sixth embodiment of the present invention. The basic configuration is the same as that of the LED light emitting device 50 in the fifth embodiment shown in FIG. 11, and the same or common elements are denoted by the same reference numerals, and redundant description is omitted.

第６実施形態におけるＬＥＤ発光装置６０が第５実施形態におけるＬＥＤ発光装置５０と異なるところは、導電部材の形成方法として支持基板２の貫通孔２ｄに形成するスルーホール電極６ｃと、支持基板２の下面の配線電極２ａ上に形成する外部電極６ｂとを金属の無電解メッキ層６ａで形成したことである。   The LED light emitting device 60 in the sixth embodiment is different from the LED light emitting device 50 in the fifth embodiment in that the through hole electrode 6c formed in the through hole 2d of the support substrate 2 and the support substrate 2 are formed as a conductive member forming method. The external electrode 6b formed on the wiring electrode 2a on the lower surface is formed of a metal electroless plating layer 6a.

上記の如く本発明におけるＬＥＤ発光装置は、支持基板として基板上面にパタ−ン電極を有さない基板を使用し、この支持基板の上面に直接ＬＥＤ素子の素子電極を接着剤により仮接着した状態において、支持基板への貫通孔の加工と貫通孔への導電部材を配設することによって、導電部材をＬＥＤ素子の素子電極に直接接続して、支持基板の裏面に引出すことができるため、支持基板に対する素子電極接続用のパターン配線や、スルーホール電極の形成を必要としないシンプル構成のＬＥＤ発光装置を提供できる。   As described above, the LED light-emitting device according to the present invention uses a substrate having no pattern electrode on the upper surface of the substrate as the support substrate, and temporarily bonds the element electrode of the LED element directly to the upper surface of the support substrate with an adhesive. In the process of forming a through hole in the support substrate and disposing a conductive member to the through hole, the conductive member can be directly connected to the element electrode of the LED element and pulled out to the back surface of the support substrate. It is possible to provide an LED light emitting device having a simple configuration that does not require the formation of a pattern wiring for connecting an element electrode to a substrate and formation of a through-hole electrode.

上記の如く、本発明におけるＬＥＤ発光装置の製造方法は上面に配線パターンを有さない支持基板に直接ＬＥＤ素子の素子電極を仮接着し、この状態において支持基板上のＬＥＤ素子を透光部材で封止することによって、支持基板とＬＥＤ素子との固定力を確保して状態で、貫通孔加工や電極引き出し加工を行うようにしている。この結果、支持基板として上面パターンを有さない絶縁基板や放熱性の良い金属基板を用いて支持基板付きのＬＥＤ発光装置を製造することができる。   As described above, the LED light emitting device manufacturing method according to the present invention temporarily bonds the LED element electrode directly to the support substrate having no wiring pattern on the upper surface, and in this state, the LED element on the support substrate is made of a translucent member. By sealing, through hole processing or electrode drawing processing is performed while securing the fixing force between the support substrate and the LED element. As a result, an LED light-emitting device with a support substrate can be manufactured using an insulating substrate having no upper surface pattern or a metal substrate with good heat dissipation as the support substrate.

２、１２、１０２、２０２ 支持基板
２ａ 配線電極
２ｄ、１２ｄ、３０２ｄ 貫通孔
３、１０３，２０３ ＬＥＤ素子
３ａ、２０３ａ、３０３ａ 素子電極
５、１０５，２０５ 透光性部材（透光性樹脂）
５ａ 凹部
６、３０６ 導電部材
６ａ 銅下地メッキ層
６ｃ、１０２ｃ、２０２ｃ、３０６ｃ スルーホ−ル電極
６ｂ、１０２ｂ、２０２ｂ、３０６ｂ 外部電極
７ 接着剤
８ 絶縁性樹脂
８ｄ 樹脂貫通孔
８ｅ 絶縁層
１０，２０、１００，２００，３００ ＬＥＤ発光装置
2, 12, 102, 202 Support substrate 2a Wiring electrode 2d, 12d, 302d Through hole 3, 103, 203 LED element 3a, 203a, 303a Element electrode 5, 105, 205 Translucent member (translucent resin)
5a Recess 6, 306 Conductive member 6a Copper base plating layer 6c, 102c, 202c, 306c Through hole electrode 6b, 102b, 202b, 306b External electrode 7 Adhesive 8 Insulating resin 8d Resin through hole 8e Insulating layer 10, 20, 100, 200, 300 LED light emitting device

Claims (11)

支持基板上に実装されたフリップチップ構造のＬＥＤ素子と、前記ＬＥＤ素子を被覆した透光性部材を有するＬＥＤ発光装置において、前記支持基板には下面側より、前記ＬＥＤ素子の素子電極に対応する位置に貫通孔が形成されており、前記貫通孔内に配設された導電部材と、前記ＬＥＤ素子の素子電極とが直接接続していることを特徴とするＬＥＤ発光装置。   In an LED light emitting device having a flip-chip LED element mounted on a support substrate and a translucent member covering the LED element, the support substrate corresponds to an element electrode of the LED element from the lower surface side. A LED light emitting device, wherein a through hole is formed at a position, and a conductive member disposed in the through hole and an element electrode of the LED element are directly connected. 前記貫通孔内に配設された導電部材は、銅下地メッキ層であることを特徴とする請求項１記載のＬＥＤ発光装置。   The LED light-emitting device according to claim 1, wherein the conductive member disposed in the through hole is a copper base plating layer. 前記支持基板は絶縁性基板であり、前記ＬＥＤ素子の素子電極は、前記支持基板の上面の絶縁層上に配設されており、前記素子電極は前記貫通孔内に配設された導電部材と直接接続していることを特徴とする請求項１または２に記載のＬＥＤ発光装置。   The support substrate is an insulating substrate, the element electrode of the LED element is disposed on an insulating layer on the upper surface of the support substrate, and the element electrode includes a conductive member disposed in the through hole. The LED light-emitting device according to claim 1, wherein the LED light-emitting device is directly connected. 前記支持基板は導電性材質の導電性基板であり、前記貫通孔の内面及び前記支持基板の下面に絶縁層が形成され、前記貫通孔の内面及び前記支持基板の下面に形成された絶縁層上に導電部材が配設されていることを特徴とする請求項１または２に記載のＬＥＤ発光装置。   The support substrate is a conductive substrate made of a conductive material, and an insulating layer is formed on the inner surface of the through hole and the lower surface of the support substrate, and on the insulating layer formed on the inner surface of the through hole and the lower surface of the support substrate. The LED light-emitting device according to claim 1, wherein a conductive member is disposed on the LED light-emitting device. 支持基板の上面にフリップチップ構造のＬＥＤ素子の素子電極を接着するＬＥＤ素子接着工程と、前記支持基板の上面に接着されたＬＥＤ素子を含む前記支持基板の上面を透光性部材で被覆する封止工程と、前記支持基板の下面側より、前記ＬＥＤ素子の素子電極に対応する位置に貫通孔を形成する貫通孔形成工程と、前記支持基板に形成した貫通孔に導電部材を配設して、前記ＬＥＤ素子の素子電極を前記支持基板の下面側に導通させる電極形成工程を有することを特徴とするＬＥＤ発光装置の製造方法。   An LED element bonding step for bonding an element electrode of an LED element having a flip-chip structure to the upper surface of the support substrate, and a sealing for covering the upper surface of the support substrate including the LED element bonded to the upper surface of the support substrate with a translucent member A through hole forming step of forming a through hole at a position corresponding to the element electrode of the LED element from the lower surface side of the support substrate; and a conductive member disposed in the through hole formed in the support substrate. A method for manufacturing an LED light emitting device, comprising: an electrode forming step of electrically connecting an element electrode of the LED element to a lower surface side of the support substrate. 前記電極形成工程において、前記支持基板の下面に外部電極を同時に形成することを特徴とする請求項５記載のＬＥＤ発光装置の製造方法。   6. The method of manufacturing an LED light-emitting device according to claim 5, wherein in the electrode formation step, an external electrode is simultaneously formed on the lower surface of the support substrate. 前記支持基板は導電性材質による導電性基板であり、前記貫通孔形成工程と前記電極形成工程との間に、前記導電性基板の貫通孔の内面及び下面に絶縁層を形成する絶縁層形成工程をさらに有する請求項５または６に記載のＬＥＤ発光装置の製造方法。   The support substrate is a conductive substrate made of a conductive material, and an insulating layer forming step of forming an insulating layer on an inner surface and a lower surface of the through hole of the conductive substrate between the through hole forming step and the electrode forming step. The manufacturing method of the LED light-emitting device of Claim 5 or 6 which further has these. 前記絶縁層形成工程は、前記導電性基板の貫通孔の内面及び下面に絶縁部材を充填する絶縁部材充填工程と、前記貫通孔内の絶縁部材における前記ＬＥＤ素子の素子電極に対応する位置に、絶縁貫通孔を形成する絶縁貫通孔形成工程とを有することを特徴とする請求項７記載のＬＥＤ発光装置の製造方法。   In the insulating layer forming step, an insulating member filling step of filling the inner surface and the lower surface of the through hole of the conductive substrate with an insulating member, and a position corresponding to the element electrode of the LED element in the insulating member in the through hole, The method of manufacturing an LED light emitting device according to claim 7, further comprising an insulating through hole forming step of forming an insulating through hole. 前記絶縁部材が絶縁性樹脂であることを特徴とする請求項８記載のＬＥＤ発光装置の製造方法。   The method for manufacturing an LED light-emitting device according to claim 8, wherein the insulating member is an insulating resin. 前記透光性部材が蛍光樹脂であることを特徴とする請求項５〜９の何れか１項に記載のＬＥＤ発光装置の製造方法。   The method for manufacturing an LED light-emitting device according to claim 5, wherein the translucent member is a fluorescent resin. 前記貫通孔内に配設された導電部材は、銅下地メッキ層であることを特徴とする請求項５〜１０の何れか１項に記載のＬＥＤ発光装置の製造方法。
The method for manufacturing an LED light-emitting device according to claim 5, wherein the conductive member disposed in the through hole is a copper base plating layer.
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