JP2016111131A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016111131A5 JP2016111131A5 JP2014245909A JP2014245909A JP2016111131A5 JP 2016111131 A5 JP2016111131 A5 JP 2016111131A5 JP 2014245909 A JP2014245909 A JP 2014245909A JP 2014245909 A JP2014245909 A JP 2014245909A JP 2016111131 A5 JP2016111131 A5 JP 2016111131A5
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- light emitting
- emitting device
- semiconductor light
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000052 comparative effect Effects 0.000 description 4
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 1
Images
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014245909A JP2016111131A (ja) | 2014-12-04 | 2014-12-04 | 周期利得活性層を有する窒化物半導体発光素子 |
US14/955,409 US9847449B2 (en) | 2014-12-04 | 2015-12-01 | Nitride semiconductor light-emitting device with periodic gain active layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014245909A JP2016111131A (ja) | 2014-12-04 | 2014-12-04 | 周期利得活性層を有する窒化物半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016111131A JP2016111131A (ja) | 2016-06-20 |
JP2016111131A5 true JP2016111131A5 (de) | 2017-11-16 |
Family
ID=56095089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014245909A Pending JP2016111131A (ja) | 2014-12-04 | 2014-12-04 | 周期利得活性層を有する窒化物半導体発光素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9847449B2 (de) |
JP (1) | JP2016111131A (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6846730B2 (ja) * | 2016-07-22 | 2021-03-24 | 学校法人 名城大学 | 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法 |
JP6932345B2 (ja) | 2017-03-27 | 2021-09-08 | 学校法人 名城大学 | 半導体多層膜反射鏡及び垂直共振器型発光素子 |
JP2018186213A (ja) * | 2017-04-27 | 2018-11-22 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
TWI685129B (zh) * | 2018-12-17 | 2020-02-11 | 財團法人工業技術研究院 | 紫外光c發光二極體 |
US11233173B2 (en) | 2018-12-17 | 2022-01-25 | Industrial Technology Research Institute | Ultraviolet c light-emitting diode |
JP7352941B2 (ja) * | 2019-08-28 | 2023-09-29 | 学校法人 名城大学 | 窒化物半導体多層膜反射鏡の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1279394C (en) * | 1985-07-26 | 1991-01-22 | Naoki Chinone | Multiple quantum well type semiconductor laser |
US5038185A (en) * | 1989-11-30 | 1991-08-06 | Xerox Corporation | Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors |
JP2001053336A (ja) * | 1999-08-05 | 2001-02-23 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6586762B2 (en) * | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
US6967981B2 (en) * | 2002-05-30 | 2005-11-22 | Xerox Corporation | Nitride based semiconductor structures with highly reflective mirrors |
JP2004260111A (ja) * | 2003-02-27 | 2004-09-16 | Sharp Corp | 半導体発光素子およびその半導体発光素子を用いた半導体発光装置 |
US20060006375A1 (en) * | 2003-04-14 | 2006-01-12 | Chen Ou | Light Mixing LED |
US20060165143A1 (en) * | 2005-01-24 | 2006-07-27 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor laser device and manufacturing method thereof |
JP4954536B2 (ja) * | 2005-11-29 | 2012-06-20 | ローム株式会社 | 窒化物半導体発光素子 |
JP4343986B2 (ja) * | 2007-02-14 | 2009-10-14 | キヤノン株式会社 | 赤色面発光レーザ素子、画像形成装置、及び画像表示装置 |
US7809040B2 (en) * | 2007-02-14 | 2010-10-05 | Canon Kabushiki Kaisha | Red surface emitting laser element, image forming device, and image display apparatus |
JP5446044B2 (ja) * | 2010-01-22 | 2014-03-19 | 日本電気株式会社 | 窒化物半導体発光素子および電子装置 |
JP5735765B2 (ja) * | 2010-08-06 | 2015-06-17 | キヤノン株式会社 | 面発光レーザ、面発光レーザアレイ、面発光レーザアレイを光源とする表示装置、プリンタヘッドおよびプリンタ |
JP6058946B2 (ja) * | 2012-08-24 | 2017-01-11 | 学校法人 名城大学 | 複数の活性層を有する窒化物半導体素子、窒化物半導体発光素子、窒化物半導体受光素子、及び、窒化物半導体素子の製造方法 |
JP6271934B2 (ja) * | 2012-11-02 | 2018-01-31 | キヤノン株式会社 | 窒化物半導体面発光レーザ及びその製造方法 |
-
2014
- 2014-12-04 JP JP2014245909A patent/JP2016111131A/ja active Pending
-
2015
- 2015-12-01 US US14/955,409 patent/US9847449B2/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2016111131A5 (de) | ||
JP2015232993A5 (de) | ||
WO2015140642A3 (en) | Quantum dot compositions | |
JP2015122525A5 (de) | ||
JP2013232442A5 (de) | ||
WO2016108596A3 (ko) | 신규한 화합물 및 이를 포함하는 유기발광소자 | |
EP3309853A3 (de) | Organische lichtemittierende anzeigevorrichtung | |
WO2015156580A3 (ko) | 유기 화합물 및 이를 포함하는 유기 전계 발광 소자 | |
EP4240126A3 (de) | Weisse organische lichtemittierende vorrichtung | |
WO2014058232A3 (ko) | 스파이로형 유기 재료 및 이를 이용한 유기 전기발광 소자 | |
EA201700136A1 (ru) | Полимерная композиция для слоя элемента слоя | |
EP3267498A4 (de) | Lichtemittierendes gruppe-iii-nitrid-halbleiterelement und wafer mit der elementstruktur | |
EA201700142A1 (ru) | Полимерная композиция для слоя элемента слоя | |
JP2016121926A5 (de) | ||
WO2016068478A3 (ko) | 고리 화합물 및 이를 포함하는 유기 발광 소자 | |
CO2017000010A2 (es) | Proceso para la preparacion de ácidos 3-hidroxipicolínicos | |
WO2015111942A3 (ko) | 유기 화합물 및 이를 포함하는 유기 전계 발광 소자 | |
JP2014229900A5 (de) | ||
EP3093899A3 (de) | Organische lichtemittierende diodenanzeige | |
WO2016013894A3 (ko) | 유기 화합물 및 이를 포함하는 유기 전계 발광 소자 | |
WO2016104954A3 (ko) | 유기 화합물 및 이를 포함하는 유기 전계 발광 소자 | |
WO2015099477A3 (ko) | 유기 화합물 및 이를 이용한 유기 전계 발광 소자 | |
RU2014101079A (ru) | Светотиристор | |
WO2016105072A3 (ko) | 유기 화합물 및 이를 포함하는 유기 전계 발광 소자 | |
WO2016099037A3 (ko) | 유기 화합물 및 이를 포함하는 유기 전계 발광 소자 |