JP2016092213A - Cleaning jig - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cleaning jig for suppressing the occurrence of staining defect caused by foreign matter remaining on the wafer surface.SOLUTION: A cleaning jig 10 includes: an opening 11 into which one side 74 of a crystal wafer 70 as a leading end can be inserted in a second direction 82 perpendicular to a first direction 81; and side end holding parts 121, 122, 131, 132 for holding two sides (one side 72 and the other side 73) in parallel to each other in the second direction 82 of the crystal wafer 70 inserted from the opening 11 by point contact.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a cleaning jig used for manufacturing, for example, a quartz device.

  In the field of semiconductor manufacturing technology, since a semiconductor ingot is cylindrical, a semiconductor wafer sliced from the semiconductor ingot is generally circular. When cleaning the semiconductor wafer, a cleaning jig for storing a large number of semiconductor wafers is used. This cleaning jig has a structure in which the periphery of a semiconductor wafer is held by a linear slit groove (see, for example, Patent Documents 1 and 2).

  On the other hand, there are piezoelectric devices, optical devices, and the like as quartz devices, and many manufacturing apparatuses for semiconductor devices are used for the manufacture. A general method for manufacturing a crystal device is to cut a crystal wafer from a crystal ingot, form a thin film or the like on the crystal wafer, and divide the crystal wafer on which the thin film or the like is formed into a number of crystal devices. This manufacturing method includes a crystal wafer cleaning process, and a cleaning jig is used in the cleaning process.

  Unlike a circular semiconductor wafer, a quartz wafer is generally square or rectangular. However, the crystal wafer cleaning jig follows the structure of the semiconductor wafer cleaning jig, and has a structure in which the periphery of the crystal wafer is held by a linear slit groove. Hereinafter, an example of a cleaning jig for a quartz wafer will be described as Related Art 1.

  FIG. 6 shows the cleaning jig of the related art 1, FIG. 6 [A] is a plan view, and FIG. 6 [B] is a front view. 7 is a cross-sectional view taken along line VII-VII in FIG. 6A. FIG. 7A shows a state in which the crystal wafer is accommodated, and FIG. 7B shows a state before and after accommodating the crystal wafer.

  The cleaning jig 60 of the related technique 1 accommodates a plurality of square or rectangular crystal wafers 70 in parallel in a first direction 81 so that their main surfaces 75 face each other apart. The cleaning jig 60 includes an opening 61 that can be inserted with a side 74 of the quartz wafer 70 first in a second direction 82 that is perpendicular to the first direction 81, and a second crystal wafer 70 that is inserted through the opening 61. A pair of slit groove forming plates 62 and 63 that hold two sides parallel to the direction 82 (one side 72 and the other side 73) in line contact or surface contact, and one side of the crystal wafer 70 inserted from the opening 61. 74, lower end abutting portions 64 and 65 that abut on the surface 74 by line contact or surface contact, and support plates 66 and 67 that support the slit groove forming plates 62 and 63 and the lower end abutting portions 64 and 65 from both ends. The material of the cleaning jig 60 is a fluororesin such as polytetrafluoroethylene.

  In the slit groove forming plates 62 and 63, a plurality of slit grooves 68 are formed from the substantially upper end to the lower end at regular intervals in the first direction 81. The “downward direction” here is the vertical direction, that is, the second direction 82, and the “upward direction” is the opposite direction of the second direction 82. The crystal wafer 70 is held in these slit grooves 68 with a gap. In addition, a through hole 69 is formed in the slit groove forming plates 62 and 63 where there is no slit groove 68 for the entrance and exit of the cleaning liquid.

  By inserting one side 74 of the crystal wafer 70 between the two slit grooves 68 facing each other, the crystal wafer 70 is accommodated in the cleaning jig 60. In the cleaning process, the cleaning jig 60 containing a large number of crystal wafers 70 is immersed in the cleaning liquid, dust and the like on the crystal wafer 70 are dropped, the cleaning jig 60 is pulled up from the cleaning liquid, and the crystal wafer 70 is dried together with the cleaning jig 60.

JP 2011-210910A JP 2012-025408 A

  However, in the cleaning using the cleaning jig 60 of the related art 1, there are not a few “stain defects” in which foreign matter remains on the crystal wafer 70. The present inventor has clarified that the fact that the structure of the cleaning jig for a semiconductor wafer is followed in the cleaning jig 60 of Related Art 1 is the cause of the occurrence of this stain defect. Hereinafter, the cause of the spot defect will be described.

  The first cause is that the crystal wafer 70 is in line contact or surface contact with the cleaning jig 60. That is, the crystal wafer 70 is in line contact or surface contact with the slit groove forming plates 62 and 63 and the lower end contact portions 64 and 65. More specifically, since the straight slit groove 68 and the two straight sides of the crystal wafer 70 (one side 72 and the other side 73) are the same straight line, the overlapping area is increased. This means that the contact area between the cleaning jig 60 and the crystal wafer 70 is large.

  If the contact area between the cleaning jig 60 and the crystal wafer 70 is large, the cleaning liquid adhering to the crystal wafer 70 increases when the cleaning jig 60 is pulled up from the cleaning liquid. This is because the cleaning liquid enters the contact portion between the cleaning jig 60 and the crystal wafer 70 and is lifted up. As a result, the foreign matter contained in the cleaning liquid remains on the crystal wafer 70 after drying.

  Further, if the contact area between the cleaning jig 60 and the quartz wafer 70 is large, the contact with the cleaning liquid at that portion is hindered, so that the area that is not sufficiently cleaned increases. In addition to this, circulation of the entire cleaning liquid is also inhibited at the contact portion between the cleaning jig 60 and the crystal wafer 70. As a result, since the cleaning effect is reduced, the foreign matter that could not be removed remains on the crystal wafer 70.

  The second cause is that the amount of cleaning liquid that passes through the slit groove forming plates 62 and 63 during cleaning is small. A through hole 69 is formed in the slit groove forming plates 62 and 63, but this is limited to a portion without the slit groove 68. This is because the slit groove 68 is formed from substantially the upper end to the lower end of the slit groove forming plates 62 and 63. Therefore, the exclusive area of the entire plurality of through holes 69 is less than half of the total area of the slit groove forming plates 62 and 63, and the plurality of through holes 69 are divided one by one. It is obstructed by the groove forming plates 62 and 63. As a result, since the cleaning effect is reduced, the foreign matter that could not be removed remains on the crystal wafer 70.

  The third cause is that the cleaning jig 60 is made of a fluororesin. Since the fluorine atom in the molecular chain is negatively charged, the surface of the fluororesin tends to be negatively charged. Therefore, the positively charged bubbles generated during the cleaning adhere to the cleaning jig 60, and the bubbles also adhere to the crystal wafer 70 in contact with the cleaning jig 60. The bubbles attached to the cleaning jig 60 inhibit the circulation of the cleaning liquid, and the bubbles attached to the crystal wafer 70 inhibit the contact with the cleaning liquid. As a result, since the cleaning effect is reduced, the foreign matter that could not be removed remains on the crystal wafer 70.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a cleaning jig that suppresses the occurrence of a stain defect due to foreign matters remaining on the wafer surface by applying a solution along the above-mentioned causes.

The cleaning jig according to the present invention,
In a cleaning jig that accommodates a plurality of square or rectangular wafers in parallel in the first direction so that their main surfaces face each other apart from each other,
An opening that can be inserted with one side of the wafer first in a second direction perpendicular to the first direction;
A side end holding portion that holds two sides parallel to the second direction of the wafer inserted from the opening by point contact;
It is characterized by comprising.

  According to the cleaning jig according to the present invention, the contact area between the cleaning jig and the wafer is reduced by holding the two sides of the wafer in a point contact, so that the amount of the cleaning liquid adhering to the wafer when pulled up from the cleaning liquid is reduced. In addition to the reduction, the contact between the wafer and the cleaning liquid can be promoted. As a result, the cleaning effect is improved, so that the occurrence of defective spots can be suppressed.

The cleaning jig of Embodiment 1 is shown, FIG. 1 [A] is a top view, FIG. 1 [B] is a front view. FIGS. 2A and 2B are cross-sectional views taken along the line II-II in FIG. 1A, FIG. 2A shows a state in which a crystal wafer is accommodated, and FIG. 2B shows a state before and after accommodating a crystal wafer. 3 [A] is a partially enlarged view of FIG. 2 [A], and FIG. 3 [B] is a front view showing the crystal wafer removed from the state shown in FIG. 1 [B]. FIG. 4 [A1] is a plan view of Modification 1 and FIG. 4 [A2] is a cross-sectional view taken along line aa in FIG. 4 [A1]. 4 [B1] is a plan view of Modification 2, FIG. 4 [B2] is a cross-sectional view taken along line bb in FIG. 4 [B1], FIG. 4 [C1] is a plan view of Modification 3, and FIG. 4C is a cross-sectional view taken along the line cc in FIG. 4C1, FIG. 4D2 is a plan view of the first embodiment, and FIG. 4D2 is a cross-sectional view taken along the line dd in FIG. FIG. 5A is a graph showing the effect of the cleaning jig of the first embodiment, and FIG. 5B is a graph showing a part of FIG. 5A in detail. FIG. 6A is a plan view, and FIG. 6B is a front view, showing a cleaning jig according to Related Art 1. FIG. FIG. 7A is a cross-sectional view taken along the line VII-VII in FIG. 6A, FIG. 7A shows a state in which a crystal wafer is accommodated, and FIG.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention (hereinafter referred to as “embodiments”) will be described with reference to the accompanying drawings. In the present specification and drawings, the same reference numerals are used for substantially the same components. The shapes depicted in the drawings are drawn so as to be easily understood by those skilled in the art, and thus do not necessarily match the actual dimensions and ratios.

  FIG. 1 shows a cleaning jig of Embodiment 1, FIG. 1 [A] is a plan view, and FIG. 1 [B] is a front view. 2 is a cross-sectional view taken along the line II-II in FIG. 1A. FIG. 2A shows a state in which the crystal wafer is accommodated, and FIG. 2A shows a state before and after accommodating the crystal wafer. 3 [A] is a partially enlarged view of FIG. 2 [A], and FIG. 3 [B] is a front view showing the crystal wafer removed from the state shown in FIG. 1 [B]. FIG. 4 is a plan view and a cross-sectional view showing details of the rod-like body and the holding piece in Embodiment 1 and a modification thereof. Hereinafter, description will be given based on these drawings.

  In the first embodiment, a crystal wafer 70 is used as a wafer. The cleaning jig 10 according to the first embodiment accommodates a plurality of square or rectangular crystal wafers 70 in parallel in a first direction 81 so that their main surfaces 75 are separated from each other. The cleaning jig 10 includes an opening 11 that can be inserted in the second direction 82 perpendicular to the first direction 81 with the one side 74 of the crystal wafer 70 first, and the second of the crystal wafer 70 inserted from the opening 11. And side end holding portions 121, 122, 131, 132 that hold two sides parallel to the direction 82 (one side 72 and the other side 73) by point contact. The cleaning jig 10 further includes lower end contact portions 14 and 15 that contact the side 74 of the crystal wafer 70 inserted from the opening 11 by point contact.

  Each of the side end holding portions 121, 122, 131, 132 includes a rod-like body 21 extending in the first direction 81 and a plurality of holding pieces 22 provided on the rod-like body 21 at regular intervals. The crystal wafer 70 is held with a gap between two adjacent holding pieces 22.

  The rod-shaped body 21 and the holding piece 22 may have any shape as long as one side 72 and the other side 73 of the crystal wafer 70 can be held by point contact. In the first embodiment, the rod-shaped body 21 has a columnar shape, and the holding piece 22 has a disk shape that penetrates the center of the rod-shaped body 21 and becomes thinner from the center toward the periphery. Details of the rod-shaped body 21 and the holding piece 22 and modifications thereof will be described later.

  As shown in FIG. 3A, the lower ends 211 and 221 of the rod-shaped body 21 and the holding piece 22 are removed from the contact portion 71 between the rod-shaped body 21 and the holding piece 22 and the crystal wafer 70 in a state where it is pulled up from the cleaning liquid after washing. is seperated.

  As shown in FIG. 3B, the cleaning jig 10 has a rectangular parallelepiped shape as a whole, and the surface 13a including the side end holding portions 131 and 132 among the six surfaces of the rectangular parallelepiped excludes the side end holding portions 131 and 132. Spaces 13b, 13c, and 13d are formed. Similarly, the surface (not shown) including the side end holding portions 121 and 122 is also a space (not shown) except for the side end holding portions 121 and 122.

  The cleaning jig 10 is made of an aromatic polyether ketone. The aromatic polyether ketone is a general term for polymers belonging to a crystalline thermoplastic resin having a linear polymer structure in which a benzene ring is bonded by ether and ketone. In Embodiment 1, polyether ether ketone (hereinafter referred to as “PEEK”) is used as the aromatic polyether ketone.

  Next, the configuration of the cleaning jig 10 will be described in more detail.

  The lower end contact portions 14 and 15 have, for example, a columnar shape in which the portion in contact with the crystal wafer 70 extends in the first direction 81, and thereby contacts the one side 74 by point contact. In the first embodiment, the lower end contact portions 14 and 15 are cylindrical, but are not limited thereto. For example, the lower end contact portions 14 and 15 may have a prismatic shape. In this case, in order to obtain point contact with the crystal wafer 70, it is necessary to arrange the ridgeline so as to contact the crystal wafer 70 instead of a plane such as a prism.

  In the first embodiment, one side 72 is held by two side end holding portions 121 and 122, the other side 73 is held by two side end holding portions 131 and 132, and one side 74 is abutted by two lower ends. Although contact | abutted by the parts 14 and 15, it is not limited to these. For example, one side 72 is held by one or three or more side end holding portions, the other side 73 is held by one or three or more side end holding portions, and one side 74 is set by one or three sides. You may contact | abut by the above lower end contact part, and you may differ the number of the side end holding parts holding one side 72, and the number of the side end holding parts holding the other side 73. FIG.

  The cleaning jig 10 further includes support plates 16 and 17 that support the side end holding portions 121, 122, 131, and 132 and the lower end contact portions 14 and 15 from both ends. The support plates 16 and 17 are also formed with through holes (not shown) for entering and exiting the cleaning liquid. Although the thickness of the quartz wafer 70 is shown enlarged in the drawing, the thickness of the quartz wafer 70 is actually so small that it can be ignored as compared with the size of the main surface 75.

  Next, details of the rod-like body 21 and the holding piece 22 in the first embodiment and a modification thereof will be described.

  The rod-shaped body 21 may have a columnar shape or a prismatic shape whose ridgeline is in contact with the crystal wafer 70. Here, “a columnar shape or a prismatic shape in which a ridge line is in contact with the crystal wafer 70” means that all solids that change little by little due to chamfering or wear from the columnar shape to the prismatic shape are included. “Cylindrical” as used herein includes cylinders, elliptical columns, columns divided by planes passing through those axes or planes parallel to the planes, etc., and “prism” is triangular, quadrangular, pentagonal, etc. The above polygonal columns, columns passing through the axes thereof, or columns divided by a plane parallel to the surface are included. The “prism shape in which the ridge line is in contact with the crystal wafer 70” means that the ridge line is not in a plane but in contact with the crystal wafer 70 in order to obtain point contact with the crystal wafer 70. At this time, since the thickness of the crystal wafer 70 is thin, the contact between the ridge line and the periphery of the crystal wafer 70 can be regarded as a point contact.

  The holding piece 22 may have a disk shape or a square plate shape in which the ridge line comes into contact with the crystal wafer 70 and penetrates through the center of the rod-shaped body 21 and becomes thinner from the center toward the periphery. Here, “thinner becomes thinner from the center toward the periphery” is intended to avoid the surface or ridgeline of the holding piece 22 being parallel to the main surface 75 of the crystal wafer 70 to be in line contact or surface contact. In addition, “a disk shape or a square plate shape in which the ridge line is in contact with the crystal wafer 70 is thinned from the center to the periphery” means all changes gradually from the disk shape to the square plate shape due to chamfering or wear. It is meant to include three-dimensional solids. In this "disc shape that becomes thinner from the center toward the periphery", two cones or elliptical cones whose bottom surfaces are joined with a disc sandwiched between them, two cones or elliptical cones whose bottoms are joined, A spheroid obtained by using the minor axis as a rotation axis, a cone divided by a plane passing through these axes or a plane parallel to the plane, and the like are included. Etc. are included. "Square plate shape that becomes thinner from the center toward the periphery" includes two pyramids whose bottom faces are joined with the square plate sandwiched between them, two pyramids whose bottom faces are joined together, a plane passing through their axes, or a plane thereof And a cone divided by a plane parallel to. The “square plate shape in which the ridge line is in contact with the crystal wafer 70” is intended to obtain a point contact with the crystal wafer 70 so that the ridge line is in contact with the crystal wafer 70 instead of a plane. At this time, since the thickness of the crystal wafer 70 is thin, the contact between the ridge line and the periphery of the crystal wafer 70 can be regarded as a point contact.

  In the first modification shown in FIGS. 4A1 and 4A2, the rod-shaped body 21a is formed of an elliptical column, and the holding piece 22 is formed of two elliptical cones whose bottom surfaces are joined with a disc interposed therebetween. The convex curved surfaces of the elliptic cylinder and the elliptic cone contact the peripheral edge of the crystal wafer 70 at points.

  In the modified example 2 shown in FIGS. 4B1 and 4B, the rod-shaped body 21b is formed of a quadrangular prism, and the holding piece 22b is formed of two quadrangular pyramids whose bottom surfaces are joined with a square plate interposed therebetween. The ridgeline 212 of the rod-shaped body 21b contacts the periphery of the crystal wafer 70 with a point, and the ridgeline 222 of the holding piece 22b contacts the periphery of the crystal wafer 70 with a point.

  In Modification 3 shown in FIGS. 4 [C1] and [C2], the rod-like body 21c is composed of one column that is divided into two by a plane passing through its axis. The holding piece 22c is formed of one cone in which two cones whose bottom surfaces are joined to each other with a disc interposed therebetween are divided into two by a plane passing through the axis. If there is no problem in mechanical strength, the rod-like body 21c and the holding piece 22c divided in half may be adopted from the viewpoint of miniaturization.

  In this Embodiment 1 shown to FIG. 4 [D1] [D2], the rod-shaped body 21 is cylindrical. The holding piece 22 has a disk shape that penetrates the center 223 of the rod-shaped body 21 and becomes thinner from the center 223 toward the peripheral edge 224. That is, when the thickness of the center 223 is t1, and the thickness of the peripheral edge 224 is t2, t1> t2 is established. Specifically, the holding piece 22 has two conical shapes (abacus balls) whose bottom surfaces are joined with a disc interposed therebetween, and the apexes of these cones are located in the rod-shaped body 21.

  Next, a method for using the cleaning jig 10 will be described.

  First, one side 74 of the crystal wafer 70 is inserted from the opening 11. Then, one side 72 is inserted between two adjacent holding pieces 22 of the side end holding portion 121, and at the same time, the other side 73 is inserted between two adjacent holding pieces 22 of the side end holding portion 131. . Subsequently, one side 72 is inserted between two adjacent holding pieces 22 of the side end holding portion 122, and at the same time, the other side 73 is inserted between two adjacent holding pieces 22 of the side end holding portion 132. To do. As a result, the crystal wafer 70 is held by the side end holding portions 121, 122, 131, 132 by point contact. Subsequently, the crystal wafer 70 is inserted until one side 74 hits the lower end contact portions 14 and 15. In this way, a large number of crystal wafers 70 are accommodated in the cleaning jig 10. The process of putting the crystal wafer 70 in and out of the cleaning jig 10 is generally mechanized, and the cleaning jig 10 is used so that the second direction 82 is a horizontal direction.

  In the cleaning process, the cleaning jig 10 containing a large number of crystal wafers 70 is immersed in the cleaning liquid, ultrasonic waves are applied to remove dust and the like on the crystal wafer 70, the cleaning jig 10 is pulled up from the cleaning liquid, and the cleaning jig 10 is rotated or heated. By doing so, the crystal wafer 70 is dried. Examples of the cleaning liquid include organic solvents and pure water. In the cleaning process, cleaning and drying may be repeated a plurality of times using a plurality of types of cleaning liquid. Finally, the dried crystal wafer 70 is taken out from the cleaning jig 10. In the cleaning process, the cleaning jig 10 is used so that the second direction 82 is a vertical direction.

  Next, the operation and effect of the cleaning jig 10 will be described.

  (1) According to the cleaning jig 10, the two sides (one side 72 and the other side 73) of the crystal wafer 70 are held by point contact. For example, the rod-like body 21 and the holding piece 22 having a convex curved surface such as a cylinder or a cone and the two straight sides of the crystal wafer 70 (one side 72 and the other side 73) can contact only at points. Absent. As a result, the contact area between the cleaning jig 10 and the crystal wafer 70 is reduced, so that the amount of the cleaning liquid adhering to the crystal wafer 70 when the cleaning jig 10 is pulled up from the cleaning liquid can be reduced. Accordingly, foreign matters that are contained in the cleaning liquid and remain on the crystal wafer 70 after drying can be reduced, and hence the occurrence of stain defects can be suppressed.

  Further, since the contact area between the cleaning jig 10 and the crystal wafer 70 is small, the contact with the cleaning liquid at that portion is promoted, and the circulation of the entire cleaning liquid is also promoted. Therefore, since the cleaning effect is improved, it is possible to suppress the occurrence of stain defects.

  (2) As shown in FIG. 3A, when the lower ends 211 and 221 of the rod-shaped body 21 and the holding piece 22 are separated from the contact portion 71 with the crystal wafer 70 in a state of being pulled up from the cleaning liquid after cleaning, For example, when the rod-shaped body 21 has a cylindrical shape and the holding piece 22 has a disk shape penetrating through the center of the rod-shaped body 21, the cleaning liquid attached to the cleaning jig 10 when pulled up from the cleaning liquid is rod-shaped by its own weight. Since the liquid droplets L accumulate on the lower ends 211 and 221 (tips in the second direction 82) of the body 21 and the holding piece 22, less cleaning liquid moves from the cleaning jig 10 to the crystal wafer 70 via the contact portion 71. Therefore, since the amount of the cleaning liquid that adheres to the crystal wafer 70 when it is lifted from the cleaning liquid can be further reduced, the occurrence of a stain defect can be further suppressed.

  (3) As shown in FIG. 3B, the cleaning jig 10 has a rectangular parallelepiped shape as a whole, and among the six surfaces of the rectangular parallelepiped, the surface 13a including the side end holding portions 131 and 132 is the side end holding portions 131 and 132. In the case where the spaces 13b, 13c, and 13d are formed (except for the case where the surface including the side end holding portions 121 and 122 is a space except for the side end holding portions 121 and 122), the entire cleaning liquid is circulated. Since the cleaning effect is improved by promoting the above, the occurrence of stain defects can be suppressed.

  (4) In the case where the lower end contact portions 14 and 15 that contact the side 74 of the crystal wafer 70 inserted from the opening 11 by point contact are further provided, the contact area between the cleaning jig 10 and the crystal wafer 70 is smaller. As a result, the cleaning effect is further improved, so that the occurrence of stain defects can be further suppressed.

  (5) When the cleaning jig 10 is made of aromatic polyetherketone, since it is difficult to be charged in terms of material, charged bubbles generated during cleaning are difficult to adhere to the cleaning jig 10, and the bubbles adhere to the cleaning jig 10. If you do, leave immediately. Therefore, since the contact between the crystal wafer 70 and the cleaning liquid and the circulation of the cleaning liquid can be promoted, the cleaning effect is further improved, so that the occurrence of stain defects can be further suppressed.

  In addition, the aromatic polyether ketone is suitable as a material for the cleaning jig 10 because it has not only extremely high heat resistance as a thermoplastic resin but also excellent fatigue resistance and chemical resistance. Among the aromatic polyether ketones, PEEK, in particular, has a heat resistance of about 140 ° C., has good wear resistance and dimensional stability, has excellent workability, and can be processed with a normal injection molding machine. It is most suitable as a material for the cleaning jig 10.

  (6) FIG. 5 shows the inspection result of the crystal wafer after cleaning when the cleaning jig of Related Technology 1 is used until August in a certain fiscal year and the cleaning jig of Embodiment 1 is used from September. Yes. In FIG. 5A, the horizontal axis is the production month, and the vertical axis is the stain defect occurrence rate (%). ◆ is the target value, ■ is the actual value. FIG. 5 [B] shows details of September in FIG. 5 [A], the horizontal axis is the production date, and the vertical axis is the stain defect occurrence rate (%) (actual value).

  As apparent from FIG. 5 [A], from March to August using the cleaning jig of Related Technique 1, the stain defect occurrence rate was 6 to 12%. On the other hand, in September, when the cleaning jig of the first embodiment is used, the stain defect occurrence rate is drastically reduced to 3.5%. When this is seen in detail, as is apparent from FIG. 5B, the stain defect occurrence rate is almost 0% after September 7 using the cleaning jig of the first embodiment. Thus, the excellent effect of the cleaning jig of Embodiment 1 has been demonstrated.

  The present invention has been described above with reference to the above embodiment, but the present invention is not limited to the above embodiment. Various changes that can be understood by those skilled in the art can be made to the configuration and details of the present invention.

  The cleaning jig according to the present invention is not limited to a quartz wafer, and can be used for cleaning a semiconductor wafer or the like as long as it is square or rectangular. Further, the cleaning jig according to the present invention is not limited to its name, and can be used as a carrier used for, for example, wet etching or development of a photoresist film.

<Embodiment 1>
DESCRIPTION OF SYMBOLS 10 Cleaning jig 11 Opening part 121,122,131,132 Side edge holding part 13a Surface including side edge holding part 13b, 13c, 13d Space 14,15 Lower end contact part 16,17 Support plate 21,21a, 21b, 21c Rod-shaped body 211 Lower end of rod-shaped body 212 Ridge line of rod-shaped body 22, 22a, 22b, 22c Holding piece 221 Lower end of holding piece 222 Edge of holding piece 223 Center of holding piece 224 Perimeter of holding piece 70 Crystal wafer 71 Contact portion 72 One side Side (two sides)
73 The other side (two sides)
74 One side 75 Main surface 81 First direction 82 Second direction L Droplet t1 Thickness of center of holding piece t2 Thickness of peripheral edge of holding piece <Related art 1>
60 Cleaning jig 61 Opening 62, 63 Slit groove forming plate 64, 65 Lower end contact portion 66, 67 Support plate 68 Slit groove 69 Through hole

Claims (7)

In a cleaning jig that accommodates a plurality of square or rectangular wafers in parallel in the first direction so that their main surfaces face each other apart from each other,
An opening that can be inserted with one side of the wafer first in a second direction perpendicular to the first direction;
A side end holding portion that holds two sides parallel to the second direction of the wafer inserted from the opening by point contact;
A cleaning jig characterized by comprising: The side end holding portion has a rod-like body extending in the first direction, and a plurality of holding pieces provided on the rod-like body at regular intervals,
The wafer is held with a gap between two adjacent holding pieces,
The cleaning jig according to claim 1. The lower ends of the rod-shaped body and the holding piece are separated from the contact portion between the rod-shaped body and the holding piece and the wafer in a state of being pulled up from the cleaning liquid after cleaning.
The cleaning jig according to claim 2. The rod-shaped body is a columnar shape or a prismatic shape whose ridgeline is in contact with the wafer,
The holding piece has a disk shape or a square plate shape in which a ridge line is in contact with the wafer through the center of the rod-like body and becomes thinner from the center toward the periphery.
The cleaning jig according to claim 2 or 3. The overall shape is a rectangular parallelepiped,
Of the six surfaces of the rectangular parallelepiped, the surface including the side end holding portion is a space except for the side end holding portion.
The cleaning jig according to any one of claims 2 to 4. A lower end abutting portion that abuts on one side of the wafer inserted from the opening by point contact;
The cleaning jig according to any one of claims 1 to 5, further comprising: Consisting of aromatic polyetherketone,
The cleaning jig according to any one of claims 1 to 6.

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