JP2016092142A5 - - Google Patents

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JP2016092142A5
JP2016092142A5 JP2014223475A JP2014223475A JP2016092142A5 JP 2016092142 A5 JP2016092142 A5 JP 2016092142A5 JP 2014223475 A JP2014223475 A JP 2014223475A JP 2014223475 A JP2014223475 A JP 2014223475A JP 2016092142 A5 JP2016092142 A5 JP 2016092142A5
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Japan
Prior art keywords
porous ceramic
ceramic substrate
wiring
permeation prevention
manufacturing
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JP2014223475A
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Japanese (ja)
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JP2016092142A (en
JP6296961B2 (en
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Priority claimed from JP2014223475A external-priority patent/JP6296961B2/en
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Claims (8)

多孔質セラミックス基板に、当該多孔質セラミックス基板の孔を塞ぐ浸透防止膜を形成し焼成によって分解される前処理液を塗布する工程と、
前記前処理液を硬化させて前記多孔質セラミックス基板に浸透防止膜を形成する工程と、
浸透防止膜が形成された前記多孔質セラミックス基板の表面に配線を形成する工程と、
前記浸透防止膜が分解される温度で、配線が形成された前記多孔質セラミックス基板を焼成する工程と、
を有することを特徴とする配線基板の製造方法。 Applying a pretreatment liquid to the porous ceramic substrate, which forms a permeation prevention film that closes the pores of the porous ceramic substrate and is decomposed by firing;
Curing the pretreatment liquid to form a permeation prevention film on the porous ceramic substrate;
Forming a wiring on the surface of the porous ceramic substrate on which the permeation prevention film is formed;
Firing the porous ceramic substrate on which the wiring is formed at a temperature at which the permeation prevention film is decomposed;
A method of manufacturing a wiring board, comprising: 前記浸透防止膜は、
Ｓｉ−Ｏ−Ｓｉ結合を主鎖とする三次元架橋した膜であり、
・（Ｒ１Ｏ）ｍ−Ｓｉ−（Ｒ２）ｎを単独もしくは複数組み合わせたモノマーの混合物、
・（Ｒ１Ｏ）ｍ−Ｓｉ−（Ｒ２）ｎを単独もしくは複数組み合わせたモノマーに由来するオリゴマーの混合物、または
・（Ｒ１Ｏ）ｍ−Ｓｉ−（Ｒ２）ｎを単独もしくは複数組み合わせたモノマーと（Ｒ１Ｏ）ｍ−Ｓｉ−（Ｒ２）ｎを単独もしくは複数組み合わせたモノマーに由来するオリゴマーとの混合物
のいずれかを含み、
Ｒ１は水素または炭素数が１〜１０の飽和炭化水素基であり、
Ｒ２は水素または炭素数が１〜１０の炭化水素基であり、
ｍは１〜４の整数、ｎは０〜３の整数であってｍ＋ｎ＝４を満たす、請求項１に記載の製造方法。 The permeation prevention membrane is
It is a three-dimensionally crosslinked film having a Si-O-Si bond as the main chain,
(R 1 O) m —Si— (R 2 ) n or a mixture of monomers obtained by combining a plurality of n ;
· (R 1 O) m -Si- (R 2) a mixture of oligomers derived from the n singly or in combination of plural monomer or · (R 1 O) m -Si- (R 2) alone or a plurality combination of n, Or a mixture of an oligomer derived from a monomer in which (R 1 O) m —Si— (R 2 ) n is used alone or in combination.
R 1 is hydrogen or a saturated hydrocarbon group having 1 to 10 carbon atoms;
R 2 is hydrogen or a hydrocarbon group having 1 to 10 carbon atoms,
The manufacturing method according to claim 1, wherein m is an integer of 1 to 4, n is an integer of 0 to 3, and satisfies m + n = 4. 前記塗布する工程では、前記多孔質セラミックス基板を前記前処理液に浸漬する、請求項１または２に記載の製造方法。 Wherein in the coating to process, immersing the porous ceramic board to the pretreatment liquid, the production method according to claim 1 or 2. 前記配線を形成する工程では、前記配線の材料として金属ペーストを使用する、請求項１〜３のいずれか一項に記載の製造方法。   The manufacturing method according to claim 1, wherein a metal paste is used as a material of the wiring in the step of forming the wiring. 前記焼成する工程では、前記浸透防止膜を分解させるとともに前記金属ペーストを焼成する、請求項４に記載の製造方法。   The manufacturing method according to claim 4, wherein in the firing step, the permeation preventive film is decomposed and the metal paste is fired. 前記配線を形成する工程では、前記多孔質セラミックス基板の上にメッキシード層を形成し、当該メッキシード層の上に金属メッキ層を形成し、当該金属メッキ層と当該メッキシード層を部分的に除去して前記配線を形成する、請求項１〜３のいずれか一項に記載の製造方法。 In the step of forming the wiring, the porous plating seed layer is formed on the ceramic base plate, a metal plating layer is formed on the plating seed layer, partially the metal plating layer and the plating seed layer The manufacturing method according to claim 1, wherein the wiring is formed by removing the wiring. 前記多孔質セラミックス基板は気孔率が５〜２０％である、請求項１〜６のいずれか一項に記載の製造方法。   The manufacturing method according to any one of claims 1 to 6, wherein the porous ceramic substrate has a porosity of 5 to 20%. 多孔質セラミックス基板に、当該多孔質セラミックス基板の孔を塞ぐ浸透防止膜を形成し焼成によって分解される前処理液を塗布する工程と、
前記前処理液を硬化させて前記多孔質セラミックス基板に浸透防止膜を形成する工程と、
浸透防止膜が形成された前記多孔質セラミックス基板の表面に配線を形成する工程と、
前記浸透防止膜が分解される温度で、配線が形成された前記多孔質セラミックス基板を焼成する工程と、
焼成された前記多孔質セラミックス基板の表面に発光素子を実装する工程と、
実装された前記発光素子を樹脂により封止する工程と、
を有することを特徴とする発光装置の製造方法。 Applying a pretreatment liquid to the porous ceramic substrate, which forms a permeation prevention film that closes the pores of the porous ceramic substrate and is decomposed by firing;
Curing the pretreatment liquid to form a permeation prevention film on the porous ceramic substrate;
Forming a wiring on the surface of the porous ceramic substrate on which the permeation prevention film is formed;
Firing the porous ceramic substrate on which the wiring is formed at a temperature at which the permeation prevention film is decomposed;
Mounting a light emitting element on the surface of the fired porous ceramic substrate;
Sealing the mounted light emitting element with resin;
A method for manufacturing a light-emitting device, comprising:
JP2014223475A 2014-10-31 2014-10-31 WIRING BOARD AND LIGHT EMITTING DEVICE MANUFACTURING METHOD USING THE SAME Active JP6296961B2 (en)

Priority Applications (1)

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JP2014223475A JP6296961B2 (en) 2014-10-31 2014-10-31 WIRING BOARD AND LIGHT EMITTING DEVICE MANUFACTURING METHOD USING THE SAME

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014223475A JP6296961B2 (en) 2014-10-31 2014-10-31 WIRING BOARD AND LIGHT EMITTING DEVICE MANUFACTURING METHOD USING THE SAME

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JP2016092142A JP2016092142A (en) 2016-05-23
JP2016092142A5 true JP2016092142A5 (en) 2017-06-29
JP6296961B2 JP6296961B2 (en) 2018-03-20

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Publication number Priority date Publication date Assignee Title
WO2020031079A1 (en) * 2018-08-09 2020-02-13 積水化成品工業株式会社 Organic inorganic composite particle, method for producing same, and application thereof
JP2020026517A (en) * 2018-08-09 2020-02-20 積水化成品工業株式会社 Method for producing organic-inorganic composite particles
EP3835328A4 (en) * 2018-08-09 2022-04-27 Sekisui Kasei Co., Ltd. Organic inorganic composite particle, method for producing same, and application thereof

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JPH10190196A (en) * 1996-12-26 1998-07-21 Canon Inc Insulating film and its formation
DE19930782A1 (en) * 1999-07-03 2001-01-04 Bosch Gmbh Robert Process for the selective coating of ceramic surface areas
JP2001291943A (en) * 2000-04-06 2001-10-19 Matsushita Electric Ind Co Ltd Method for forming electrode pattern on substrate
JP4926481B2 (en) * 2006-01-26 2012-05-09 共立エレックス株式会社 Light emitting diode package and light emitting diode
JP2009239017A (en) * 2008-03-27 2009-10-15 Ngk Spark Plug Co Ltd Wiring board for packaging light emitting element
JP4980439B2 (en) * 2010-03-02 2012-07-18 株式会社トクヤマ Method for manufacturing metallized ceramic substrate
JP2013251285A (en) * 2010-09-22 2013-12-12 Sanyo Electric Co Ltd Package for light-emitting device and method for manufacturing the same

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