JP2016092110A - Light-emitting device and manufacturing method of light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily manufacture a light-emitting device which improves light extraction.SOLUTION: A manufacturing method of the light-emitting device includes: a first step for preparing a light-emitting element including a substrate including a first principal surface and a second principal surface, a semiconductor layer that is provided on the first principal surface, and an electrode that is electrically connected with the semiconductor layer; a second step for forming a cover member at a side of a side face of the substrate in such a manner that an outer side face at a side of the second principal surface is positioned outsides further than at a side of the first principal surface; a third step for covering the outer side face of the cover member with a light reflection member; and a fourth step for removing the substrate from the semiconductor layer.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a light emitting device and a method for manufacturing the light emitting device.

  Light emitting diodes (LEDs) are widely used in various applications such as various illuminations and light sources for backlights.

  Patent Document 1 discloses a CSP (Chip Size Package) type semiconductor light emitting device. In the semiconductor light emitting device of Patent Document 1, the side surface of a semiconductor light emitting element having a transparent insulating substrate and a semiconductor layer is covered with a white reflecting member, and a phosphor sheet is provided on the transparent insulating substrate and the white reflecting member by an adhesive member. It has been. With such a structure, a semiconductor light emitting device that is small and can be easily manufactured can be manufactured.

JP 2012-227470 A

  However, in the semiconductor light emitting device disclosed in Patent Document 1, since the semiconductor light emitting element has a transparent insulating substrate, a part of the light emitted from the semiconductor layer is absorbed, and the light extraction may be reduced. There is.

  Therefore, an object of the embodiment of the present invention is to provide a light emitting device with high light extraction. It is another object of the present invention to provide a manufacturing method capable of easily manufacturing a light-emitting device with high light extraction.

  A light emitting device mounting method according to an embodiment includes a substrate having a first main surface and a second main surface, a semiconductor layer provided on the first main surface, and an electrode electrically connected to the semiconductor layer. And forming a covering member on the side surface of the substrate so that the outer surface on the second main surface side is located outside the first main surface side than the first main surface side. A second step of covering the outer surface of the covering member with a light reflecting member, and a fourth step of removing the substrate from the semiconductor layer.

  According to the embodiment of the present invention, a light emitting device with high light extraction can be provided. In addition, a manufacturing method capable of easily manufacturing a light-emitting device with high light extraction can be provided.

1 is a cross-sectional view of a light emitting device according to Embodiment 1. FIG. FIG. 6 is a cross-sectional view showing a first step of the method for manufacturing the light emitting device according to Embodiment 1. 5 is a side view showing a second step of the method for manufacturing the light emitting device according to Embodiment 1. FIG. 6 is a plan view showing a second step of the method for manufacturing the light emitting device according to Embodiment 1. FIG. 5 is a side view showing a second step of the method for manufacturing the light emitting device according to Embodiment 1. FIG. 5 is a side view showing a second step of the method for manufacturing the light emitting device according to Embodiment 1. FIG. 5 is a side view showing a second step of the method for manufacturing the light emitting device according to Embodiment 1. FIG. 5 is a side view showing a second step of the method for manufacturing the light emitting device according to Embodiment 1. FIG. FIG. 5 is a side transparent view illustrating a third step of the method for manufacturing the light emitting device according to the first embodiment. FIG. 5 is a side transparent view illustrating a third step of the method for manufacturing the light emitting device according to the first embodiment. FIG. 6 is a side transparent view illustrating a fourth step of the method for manufacturing the light emitting device according to Embodiment 1. 6 is a cross-sectional view illustrating a fourth step of the method for manufacturing the light-emitting device according to Embodiment 1. FIG. FIG. 6 is a cross-sectional view illustrating a light transmissive member forming step of the method for manufacturing the light emitting device according to the first embodiment. 6 is a cross-sectional view illustrating a sealing member forming step of the method for manufacturing the light emitting device according to Embodiment 1. FIG. FIG. 6 is a cross-sectional view illustrating a reflective layer forming step of the method for manufacturing the light emitting device according to Embodiment 1. 6 is a cross-sectional view of a light emitting device according to Embodiment 2. FIG. 6 is a plan view of a light emitting device according to Embodiment 2. FIG. FIG. 10 is a side view showing a second step of the method for manufacturing the light emitting device according to Embodiment 2. FIG. 10 is a side transparent view illustrating a third step of the method for manufacturing the light emitting device according to the second embodiment. 12 is a cross-sectional view illustrating a fourth step of the method for manufacturing the light-emitting device according to Embodiment 2. FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light-emitting device described below is for embodying the technical idea of the embodiment, and is not limited to the following. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the component parts do not limit the technical scope of the embodiment, but are merely illustrative examples. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. The embodiments described below can be applied by appropriately combining the components.

<Embodiment 1>
(Light emitting device)
FIG. 1 is a cross-sectional view of a light emitting device 1000 according to this embodiment.
The light emitting device 1000 of the present embodiment is a top emission type (top view) in which the surface on which the n-side electrode 3n and the p-side electrode 3p of the light emitting element 10 are exposed is the mounting surface, and the surface opposite to the mounting surface is the light emitting surface. Type) light emitting device. Note that the present invention is not limited to this, and a side light emission type (side view type) light emitting device may be used. Further, the light emitting device 1000 may be mounted on, for example, another wiring board.

The light emitting device 1000 includes a light emitting element 10 having a semiconductor layer 2 and a pair of positive and negative electrodes 3n and 3p electrically connected to the semiconductor layer 2. In addition, the light reflection member 5 is provided to cover the surfaces and side surfaces of the electrodes 3n and 3p and the semiconductor layer 2 on the side having the electrodes so that the light emitting surface side of the semiconductor layer 2 is exposed. The light reflecting member 5 is formed so as to surround the semiconductor layer 2, and has a side wall 5 a higher than the semiconductor layer 2. A recess 5 c of the light emitting device 1000 is formed by the side wall 5 a of the light reflecting member 5 and the exposed surface of the semiconductor layer 2. The inner side surface 5b of the side wall 5a of the light reflecting member 5 is formed such that the light emitting surface side of the light emitting device 1000 is positioned outside the semiconductor layer 2 side.
In the present embodiment, the inner surface 5 b of the side wall 5 a of the light reflecting member 5 has an inclined surface that is inclined outward from the semiconductor layer 2 side toward the light emitting surface side of the light emitting device 1000. The outer surface of the light reflecting member 5 can be formed substantially perpendicular to the mounting surface. That is, the side wall 5 a of the light reflecting member 5 has a tapered shape in which the thickness decreases from the semiconductor layer 2 side to the light emitting surface side of the light emitting device 1000. The inner side surface 5b of the side wall 5a of the light reflecting member 5 is preferably a substantially flat inclined surface because light from the semiconductor layer 2 can be efficiently reflected to the light emitting surface side, but the inclined surface is flat. It does not have to be. For example, the inclined surface may be a curved surface, a concave surface, a convex surface, or an uneven surface (step surface). Moreover, in this embodiment, the translucent member 6 is provided in the recessed part 5c.

With the above structure, a small light emitting device 1000 can be formed. Moreover, since the light emitting element 10 does not have a growth substrate or the like for the semiconductor layer 2, useless absorption of light emitted from the semiconductor layer 2 can be prevented. Furthermore, the inner side surface 5b of the side wall 5a of the light reflecting member 5 is formed so as to be positioned on the outer side on the light emitting surface side of the light emitting device 1000 than on the semiconductor layer 2 side, so that light from the semiconductor layer 2 is efficiently transmitted. The light can be emitted from the light emitting device 1000.
Hereinafter, a method for manufacturing the light emitting device 1000 will be described in detail.

(Method for manufacturing light emitting device)
First Step FIG. 2A is a schematic view showing a first step of the method for manufacturing the light emitting device 1000 according to the present embodiment. In the first step, first, the light emitting element 10 is prepared.

  The prepared light emitting element 10 includes a substrate 1, a semiconductor layer 2, and a pair of positive and negative electrodes 3 n and 3 p that are electrically connected to the semiconductor layer 2. In the present embodiment, the light emitting element 10 in which the n-side electrode 3n and the p-side electrode 3p are provided on the same surface can be used. Thereby, the light emitting device 1000 in which the electrodes 3n and 3p are exposed on the mounting surface can be easily formed.

As the substrate 1 of this embodiment, a growth substrate for growing the semiconductor layer 2 can be used. For example, when the semiconductor layer 2 is formed using a nitride semiconductor such as GaN (gallium nitride), the substrate 1 may be an insulating substrate such as Al ₂ O ₃ or MgAl ₂ O ₄ , SiC, ZnS, ZnO, Si And oxide substrates such as lithium niobate and neodymium gallate that lattice-match with GaAs, diamond, and nitride semiconductors. In addition, the board | substrate 1 is removed in the 4th process mentioned later.

  The substrate 1 has a first main surface 1a and a second main surface 1b opposite to the first main surface (that is, the back surface facing the first main surface). The semiconductor layer 2 is provided on the first main surface 1 a of the substrate 1. The semiconductor layer 2 is a stacked body including an n-type semiconductor layer 2n, a light emitting layer 2a, and a p-type semiconductor layer 2p. In the present embodiment, for example, the n-type semiconductor layer 2n, the light-emitting layer 2a, and the p-type semiconductor layer 2p are sequentially stacked from the first main surface 1a of the substrate 1, and a part of the p-type semiconductor layer 2p and the light-emitting layer 2a is removed. Thus, the semiconductor layer 2 having a step that exposes a part of the n-type semiconductor layer 2n can be formed. An n-side electrode 3n electrically connected to the n-type semiconductor layer 2n is provided on the n-type semiconductor layer 2n, and a p-side electrode 3p electrically connected to the p-type semiconductor layer 2p is provided on the p-type semiconductor layer 2p. Can be provided. A metal material can be used as the n-side electrode 3n and the p-side electrode 3p. Examples of the metal material include Ag, Al, Ni, Rh, Au, Cu, Ti, Pt, Pd, Mo, Cr, and W. , Or an alloy thereof can be suitably used. As the n-side electrode 3n and the p-side electrode 3p, a single layer or a laminate of these metal materials can be used.

Further, it is preferable that the whole surface electrode 3a having conductivity and reflectivity is provided on substantially the entire surface of the p-type semiconductor layer 2p other than the step, and the p-side electrode 3p is provided on the upper surface thereof. By doing so, the current supplied from the p-side electrode 3p can be uniformly diffused into the p-type semiconductor layer 2p. Furthermore, the light from the light emitting layer 2a can be efficiently reflected toward the light emitting surface side of the light emitting device 1000. As the full-surface electrode 3a, Ag, Al, which is a metal material having good reflectivity in the visible light region, or an alloy containing these metals as a main component can be suitably used. The whole surface electrode 3a may be a single layer or a laminate of these metal materials.

Moreover, the cover electrode 3b which coat | covers the upper surface and side surface of the whole surface electrode 3a may be provided. By doing so, migration of the entire surface electrode 3a can be prevented. For the cover electrode 3b, a metal material having conductivity and barrier properties can be used, and as the material, for example, Al, Ti, W, Au, or the like can be used. As the cover electrode 3b, a single layer or a laminate of these metal materials can be used.

Further, a protective layer H is provided which has insulating properties and translucency, and covers the entire surface of the light emitting element 10 except for the connection portion between the substrate 1 and the outside of the n-side electrode 3n and the p-side electrode 3p. It is preferable. Thereby, the light emitting element 10 can be protected and further charging can be prevented. As the protective layer H, metal oxide or metal nitride can be used, and the material of the metal oxide or metal nitride is selected from the group consisting of Si, Ti, Zr, Nb, Ta, Al, for example. At least one oxide or nitride can be suitably used. DBR (Distributed Bragg Reflector) may be used.

The n-side electrode 3n and the p-side electrode 3p are preferably the same height in order to stably arrange the light emitting element 10. Metal bumps or the like may be provided on the n-side electrode 3n and the p-side electrode 3p. Note that the structure of the light-emitting element 10 is not limited to that described above, and a light-emitting element having a desired structure can be used as appropriate.

  Next, the prepared light emitting element 10 is disposed on the substrate 200. The light emitting element 10 is disposed on the substrate 200 such that the second main surface 1b of the substrate 1, that is, the surface of the substrate 1 opposite to the surface on which the semiconductor layer 2 and the electrodes 3n and 3p are provided is in contact with the substrate 200. . Note that the substrate 200 is removed before the fourth step.

Since the base 200 is heated when the covering member 4 is cured in the second step described later, the base 200 is preferably made of a heat-resistant material. The substrate 200 is preferably formed of, for example, an acrylic, silicone, or rubber-based material, and particularly preferably formed of an acrylic resin. The substrate 200 is preferably in the form of a sheet having a thickness of about 25 to 100 μm because it is easily peeled off from the light emitting element 10 covered with the light reflecting member 5 later.
An adhesive may be used when the light emitting element 10 is disposed on the substrate 200. As the adhesive material, an acrylic resin or the like can be suitably used. The adhesion strength between the light emitting element 10 and the substrate 200 is preferably such that the light emitting element 10 does not peel from the substrate 200 when the light reflecting member 5 is formed by compression molding or the like in the third step. For example, the adhesive strength of the substrate 200 can be about 2 to 5 N / 25 mm.

(Second step)
2B to 2G are schematic views illustrating the second step of the method for manufacturing the light emitting device 1000. FIG. In the second step, the covering member 4 is formed outside the side surface 1 c of the substrate 1 of the light emitting element 10. The side surface 1 c of the substrate 1 is a surface that connects the first main surface 1 a and the second main surface 1 b of the substrate 1. The covering member 4 (more specifically, the outer surface of the covering member 4) is provided to form an inner surface 5b of a side wall 5a of the light reflecting member 5 described later.
In the present embodiment, the covering member 4 is formed such that the outer surface of the light emitting element 10 on the second main surface 1b side of the substrate 1 is located outside the outer surface of the substrate 1 on the first main surface 1a side. . More specifically, the covering member 4 is formed such that the inner surface covers the side surface 1c of the substrate 1 of the light emitting element 10, and the outer surface is from the first main surface 1a side to the second main surface 1b side of the substrate 1. It forms so that it may become the inclined surface 4a which inclines outside.

  If the outer surface of the covering member 4 is a substantially flat inclined surface, the inner surface 5b of the light reflecting member 5 that can more efficiently reflect the light from the semiconductor layer 2 toward the light emitting surface of the light emitting device 1000 is provided. Although it can be formed, the inclined surface of the outer surface of the covering member 4 may not be a flat surface. For example, the inclined surface may be a curved surface, a concave surface, a convex surface, or an uneven surface (step surface).

  In the present embodiment, the covering member 4 is formed so as to cover substantially the entire side surface 1c of the substrate 1 of the light emitting element 10, but it is sufficient that at least a part of the side surface 1c is covered. For example, as shown in FIG. 2E, when a part of the side surface 1c of the substrate 1 has an inclined surface that is inclined outward from the first main surface side to the second main surface side, the covering member 4 is inclined. You may form so that a surface may not be coat | covered. Thereby, the quantity of the covering member 4 can be decreased. Accordingly, it is possible to form the light reflecting member 5 that can more efficiently reflect the light from the semiconductor layer 2 to the light emitting surface side of the light emitting device 1000 while reducing cost and tact.

  The covered area of the light reflecting member 5 described later is determined by the covered area of the covering member 4. For example, when the covering member 4 covers only the upper surface of the base body 200 and the side surface 1c of the substrate 1 of the light emitting element 10, the light reflecting member 5 described later is formed so as to cover the side surfaces of the semiconductor layer 2 and the electrodes 3n and 3p. The Thereby, the light-emitting device 1000 which can suppress that the light from the semiconductor layer 2 leaks from other than a light-projection surface can be formed. However, the covering member 4 may cover the semiconductor layer 2 and the electrodes 3n and 3p. Further, the covering member 4 of the present embodiment is formed so as to be in contact with the side surface 1c of the substrate 1 of the light emitting element 10, but is formed apart from the side surface 1c of the substrate 1 or via another member. It doesn't matter. Embodiment 2 in which the covering member is formed outside the side surface of the substrate via another member will be described in detail in Embodiment 2.

  Hereinafter, some examples of the method for forming the covering member 4 in the second step will be described. First, a mode in which the covering member 4 is disposed after the light emitting element 10 is disposed on the base 200 will be described.

  In the present embodiment, for example, a covering member 4 having a desired shape is formed by disposing the covering member 4 made of a resin or the like with a dispense D or the like so as to surround the periphery of the light emitting element 10 disposed on the substrate 200. can do. Specifically, as shown in FIGS. 2B and 2C, when using a substantially rectangular light emitting element 10, the periphery of each light emitting element 10 disposed on the substrate 200 is formed into a substantially rectangular ring shape by the covering member 4. Enclose. The covering member 4 may be provided in an annular shape in addition to the rectangular shape. When the light emitting element 10 having the substrate 1 having a thickness of about 1.0 × 1.0 mm and a thickness of about 0.15 mm in plan view is used, the diameter of the discharge port of the dispense D is, for example, about 0.1 mm. be able to. The covering member 4 may be arranged away from the light emitting element 10 by about 10 to 100 μm. Thereby, it can prevent that the light emitting element 10 and the dispense D contact. The covering member 4 discharged from the dispense D has a substantially constant width at the top and bottom at this point.

  When the rectangular annular covering member 4 disposed on the base 200 so as to surround the light emitting element 10 is an uncured resin or the like, the shape changes with the passage of time. Specifically, the covering member 4 gradually wets and spreads, and the inner side surface of the covering member 4 is deformed so as to cover the side surface of the light emitting element 10 (more specifically, the side surface 1c of the substrate 1). Further, as shown in FIG. 2D, at least a part of the outer surface of the covering member 4 is deformed into an inclined surface 4 a that is inclined outward from the first main surface side to the second main surface side of the substrate 1. That is, the covering member 4 can be formed in a rectangular ring shape having a rectangular hole, and has a tapered shape in which the thickness decreases from the first main surface side (the upper surface side of the base body 200) of the substrate 1 to the second main surface 1b side. Can be formed. Here, it is preferable to harden the covering member 4. For example, the covering member 4 can be cured by heating at about 150 ° for about 4 hours. Thereby, the coating | coated member 4 in which the outer surface by the side of the 2nd main surface of the board | substrate 1 is located outside the outer surface of the 1st main surface side of the board | substrate 1 can be formed. The covering member 4 also has a function of bonding the light emitting element 10 and the substrate 200. Note that the covering member 4 may not cover a part near the corner portion on the first main surface side of the substrate 1.

  The shape of the outer edge of the covering member 4 on the second main surface side of the substrate 1, that is, the shape of the outer edge of the covering member 4 in plan view can be, for example, substantially circular or substantially elliptical, but is not limited thereto. The shape of the outer edge of the covering member 4 on the second main surface side of the substrate 1 is the shape of the light emitting portion of the light emitting device 1000. Therefore, the size and shape of the light emitting part of the light emitting device 1000 can be adjusted by appropriately adjusting the shape of the outer edge of the covering member 4. In the present embodiment, the width from the outer edge of the second main surface of the substrate 1 to the outer edge of the covering member 4 in a plan view can be about 100 to 500 μm.

  In a cross-sectional view, the larger the angle formed between the outer surface (inclined surface 4a) of the covering member 4 and the side surface 1c of the substrate 1, the more efficiently light from the semiconductor layer 2 can be reflected to the light emitting surface side of the light emitting device 1000. The inner side surface 5b of the light reflecting member 5 can be formed. For example, in a sectional view, the angle of the inclined surface 4a of the covering member 4 and the side surface 1c of the substrate 1 is about 25 ° to 65 °, more preferably about 40 ° to 50 °. It is preferable to form the inclined surface 4a.

  The material of the covering member 4 is preferably a resin or the like. As a result, the outer surface of the light emitting element 10 on the second main surface side of the substrate 1 is located outside the outer surface of the first main surface side of the substrate 1 (that is, the inclined surface 4a of the covering member 4). ) Can be easily formed. In the present embodiment, the covering member 4 is also removed in a fourth step described later. Therefore, the material of the covering member 4 may be either translucent or non-translucent. Examples of the resin include thermosetting resins, thermoplastic resins, modified resins thereof, or hybrid resins containing one or more of these resins. Specifically, epoxy resin, modified epoxy resin (silicone modified epoxy resin, etc.), silicone resin, modified silicone resin (epoxy modified silicone resin, etc.), hybrid silicone resin, unsaturated polyester resin, polyimide resin, modified polyimide resin, polyamide Resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polycyclohexane terephthalate resin, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, Examples include urea resin, BT resin, and polyurethane resin. In particular, a silicone resin is preferable from the viewpoint of translucency, heat resistance, and light resistance. The aforementioned resin may contain a filler, a reflective material, a diffusing material, a wavelength conversion member, a coloring material, and the like.

The viscosity of the resin is preferably about 1 to 30 Pa · s. By doing so, the covering member 4 arranged on the base body 200 so as to surround the periphery of the light emitting element 10 can be spread in a desired shape. That is, the inner surface of the covering member 4 can be easily deformed so as to easily cover the side surface 1 c of the substrate 1 of the light emitting element 10. Furthermore, the outer surface of the covering member 4 can be easily deformed so as to be positioned on the outer side on the second main surface side than the first main surface side of the substrate 1.
For example, when the dispensing member 4 having a discharge port diameter of about 0.1 mm and a silicone resin having a viscosity of about 1 to 5 Pa · s is disposed on the substrate 200 made of an acrylic material. The covering member 4 can be deformed into a desired shape by leaving it about 10 to 100 seconds after the covering member 4 is disposed.

  When the covering member 4 is formed as described above, the covering member 4 is disposed for each of the light emitting elements 10 disposed on the base body 200, so that high accuracy is not required for the arrangement of the light emitting elements 1. Moreover, it is easy to adjust the covering region of the covering member 4. Specifically, the side surface 1c of the substrate 1 can be covered without covering the semiconductor layer 2 and the electrodes 3n and 3p of each light emitting element 10. Furthermore, since the shape of the covering member 4 can be formed by wetting and spreading of a resin or the like, the desired covering member 4 can be easily formed.

  Next, a form in which the covering member 4 is disposed before the light emitting element 10 is disposed on the base body 200 will be described. In this embodiment, the covering member 4 is disposed in advance on the second main surface of the substrate 1 of the light emitting element 10 and / or the upper surface of the base body 200, and the light emitting element 10 is disposed on the base body 200. 4 is formed.

2F and 2G are schematic views illustrating a second step of the method for manufacturing the light emitting device 1000 according to the present embodiment. In this method, before the light emitting element 10 is disposed on the base body 200, the covering member 4 is previously disposed on the second main surface of the substrate 1 of the light emitting element 10 and / or the upper surface of the base body 200. The covering member 4 is formed so as to crawl up on the side surface of the light emitting element 10 (specifically, the side surface of the substrate 1 of the light emitting element 10) due to the stress at the time of disposing.

  First, as illustrated in FIG. 2F, the covering member 4 is disposed on each region where the light emitting element 10 is disposed on the base 200. The covering member 4 can be disposed by a dropping method, printing, spraying, or the like. The speed at which the light emitting element 10 is disposed is preferably about 1 to 3 mm / s, more preferably about 2 mm / s. By doing so, the covering member 4 can be crawled up to the side surface of the light emitting element 10 by the pressure when the light emitting element 10 is arranged on the base 200, and the substrate 1 is more than the outer surface on the upper surface side of the substrate 1. The covering member 4 in which the outer surface on the lower surface side is located outside can be formed.

  When the covering member 4 is previously disposed on the base 200 before the light emitting element 10 is disposed, as described above, the annular covering having a hole having a diameter larger than the outer edge of the substrate 1 of the light emitting element 10 to be disposed. The member 4 may be formed. In this case, it is preferable to arrange the light emitting element 10 on the base body 200 in the hole before the covering member 4 spreads out. Thus, the desired covering member 4 can be formed by spreading the covering member 4 so as to cover the side surface of the arranged light emitting element 10.

In addition, the covering member 4 is disposed on the second main surface 1b of the substrate 1 of the light emitting element 10 in advance, and the light emitting element 10 is disposed on the base 200 so that the covering member 4 side faces the base 200. The covering member 4 can be formed. For example, a support 300 is prepared separately from the base body 200, a plurality of light emitting elements 10 are held on the support 300 by flip chip mounting, and the covering member 4 is formed on the second main surface 1 b of the substrate 1 of each light emitting element 10. Place. The material of the support 300 may be the same as that of the base 200, or a different material may be used. For example, the material of the support 300 is preferably a material that has heat resistance and is difficult to expand and contract by heat, and acrylic or the like is preferably used. The covering member 4 can be disposed on the second main surface 1b of the substrate 1 by a dropping method or the like. Then, as shown in FIG. 2G, the support 300 is inverted so that the covering member 4 side faces the base 200, and the light emitting element 10 is disposed on the base 200. Thereby, the covering member 4 can be crawled up to the side surface of the light emitting element 10 by the pressure when the light emitting element 10 is arranged on the base body 200, and is more than the outer surface on the first main surface side of the substrate 1. The covering member 4 in which the outer surface on the two principal surface sides is located outside can be formed. The covering member 4 preferably has a viscosity that can be retained on the substrate 1 even if it is inverted.
The support 300 is peeled off from the light emitting element 10 after the light emitting element 10 and the substrate 200 are bonded together by the covering member 4. Therefore, the adhesion strength between the light emitting element 10 and the support 300 is preferably weaker than the adhesion strength between the covering member 4 disposed on the substrate 1 of the light emitting element 10 and the substrate 200. Note that the support 300 may be used as a part of the light emitting device without being peeled off.

  Accordingly, the plurality of light emitting elements 10 can be collectively disposed on the substrate 200, and the plurality of covering members 4 can be collectively formed, so that mass productivity can be improved. The covering member 4 may be provided on both the base 200 and the second main surface of the substrate 1 of the light emitting element 10.

As described above, when the covering member 4 is disposed on the base 200 and / or the second main surface of the substrate 1 of the light emitting element 10 before the light emitting element 10 is disposed on the base 200, the above-described adhesive is used. Since it can be used as the covering member 4, it is efficient.
In addition, when the covering member 4 is formed on the second main surface of the substrate 1 of the light emitting element 10, that is, between the substrate 1 of the light emitting element 10 and the base body 200, before the fourth process, It is preferable to remove the covering member 4 on the second main surface.

When the light emitting element 10 having the substrate 1 having a thickness of about 1.0 × 1.0 mm and a thickness of about 0.15 mm is used, for example, the amount of the covering member 4 to be arranged is about 0.05 mg each. it can.

  In addition, the covering member 4 can be formed by compression molding or transfer molding using a mold. Thereby, the dispersion | variation in the shape of the coating | coated member 4 can be prevented. Moreover, the selectivity of the material of the covering member 4 is improved. Furthermore, the mass productivity can be improved as compared with the case where the covering member 4 is formed for each light emitting element 10 arranged on the substrate 200.

(Third step)
2H and FIG. 2I are schematic views illustrating a third step of the method for manufacturing the light emitting device 1000 according to the present embodiment. In the third step, the inclined surface 4 a of the covering member 4 is covered with the light reflecting member 5. Specifically, the surface and side surfaces of the semiconductor layer 2 having the electrodes 3n and 3p and the outer surface of the covering member 4 are integrally formed by printing, compression molding using a mold, transfer molding, or the like. The light reflecting member 5 can be formed on or respectively. When the light reflecting member 5 is integrally formed with respect to the plurality of light emitting elements 10 and the covering member 4, variations in the shape of the light reflecting member 5 can be prevented. Moreover, it is preferable because mass productivity can be improved.
In the present embodiment, the light reflecting member 5 is formed for each of the plurality of light emitting elements 10 covered with the covering member 4. After the formation, the light reflecting member 5 may be partially removed so that a part of the electrodes 3n and 3p of the light emitting element 10 is exposed as shown in FIG. 2I. The removal can be performed by polishing or cutting. Accordingly, a connection portion that is connected to an external terminal, wiring, or the like can be formed on the mounting surface of the light emitting device 1000. The light reflecting member 5 may not be partially removed.

As a material of the light reflecting member 5, a material in which a light reflecting material is contained in a base material such as a resin is preferable. Examples of the resin include a thermosetting resin, a thermoplastic resin, a modified resin thereof, a hybrid resin containing one or more of these resins, and the like. Specifically, epoxy resin, modified epoxy resin (silicone modified epoxy resin, etc.), silicone resin, modified silicone resin (epoxy modified silicone resin, etc.), hybrid silicone resin, unsaturated polyester resin, polyimide resin, modified polyimide resin, polyamide Resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polycyclohexane terephthalate resin, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, Examples include urea resin, BT resin, and polyurethane resin. In particular, a silicone resin is particularly preferable from the viewpoint of light resistance and flexibility.
Examples of the light reflecting material include titanium oxide, zinc oxide, aluminum oxide, titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, niobium oxide, various rare earth oxides (for example, Yttrium oxide, gadolinium oxide) and the like.
The aforementioned base material may contain a filler, a reflective material, a diffusing material, a wavelength conversion member, a coloring material, and the like.

(Fourth process)
2J and 2K are schematic views illustrating a fourth step of the method for manufacturing the light emitting device 1000 according to the present embodiment. In the fourth step, the substrate 1 of the light emitting element 10 is removed from the semiconductor layer 2. In the present embodiment, the substrate 1 and the covering member 4 formed in the second step are also removed. Specifically, as shown in FIG. 2J, a sheet-like support having a thickness of about 20 to 50 μm, more preferably about 35 μm, made of an acrylic material that has heat resistance and is difficult to expand and contract by heat. 400 is prepared, and the substrate 200 is inverted so that the electrodes 3n and 3p exposed from the light reflecting member 5 face the support 400, and the light emitting element 10 covered with the light reflecting member 5 is attached to the support 400. Place (transfer). An adhesive agent or the like may be used when arranging. Then, the substrate 200 is peeled from the light emitting element 10 covered with the light reflecting member 5. Therefore, the adhesion strength between the light emitting element 10 coated with the light reflecting member 5 and the support 400 is preferably larger than the adhesion strength between the light emitting element 10 coated with the light reflecting member 5 and the substrate 200. As a material of the support 400, acrylic or the like is preferable from the viewpoint of heat resistance. In the light emitting element 10 covered with the light reflecting member 5 disposed (transferred) on the support 400, the second main surface of the substrate 1 and the covering member 4 are exposed from the light reflecting member 5. Here, when the second main surface of the substrate 1 and the covering member 4 are not exposed, for example, when the above-described adhesive (covering member 4) covers the substrate 1, the substrate 1 is exposed. Then, a treatment such as removing the adhesive (covering member 4) is appropriately performed.

  Then, as shown in FIG. 2K, the substrate 1 of the light emitting element 10 is removed. The removal of the substrate 1 can be performed, for example, by laser lift-off (LLO) by laser irradiation. Specifically, the semiconductor material is decomposed in the vicinity of the boundary between the substrate 1 and the semiconductor layer 2 by irradiating the semiconductor layer 2 with a high-power laser beam such as an excimer laser, and the substrate 1 and the semiconductor layer 2. And the substrate 1 is peeled off. A laser beam having a wavelength that passes through the substrate 1 and is absorbed by the semiconductor layer 2 is used. For example, when the substrate 1 is a sapphire substrate and the semiconductor layer 2 is GaN, the aforementioned excimer laser (wavelength: about 248 nm) or YAG laser (wavelength: about 266 nm) can be used as the laser light. Note that a portion of the substrate 1 may remain without being removed.

When removing the board | substrate 1, the coating | coated member 4 can be peeled simultaneously. Here, when different materials are used for the base material of the covering member 4 and the light reflecting member 5, the covering member 4 and the light reflecting member 5 are more easily separated than when the same material is used. Easy to remove. In addition, it becomes easy to remove the covering member 4 together with the substrate 1 by providing a release agent to be described later on the outer surface of the covering member 4 after the second step and before the third step. The covering member 4 may not be completely removed, and a part of the covering member 4 may remain on the light reflecting member 5. Although it is efficient to remove the substrate 1 and the covering member 4 at the same time, the covering member 4 may be removed separately from the substrate 1.

By removing the substrate 1 and the covering member 4, it is possible to form a recess 5 c composed of the light reflecting member 5 and the semiconductor layer 2. When the covering member 4 is not completely removed and a part of the covering member 4 remains on the light reflecting member 5, the recess 5 c is configured by the light reflecting member 5, the covering member 4, and the semiconductor layer 2.
By forming the light emitting device 1000 by the above manufacturing method, the shape of the inner side surface 5b of the light reflecting member 5 that can efficiently reflect the light from the semiconductor layer 2 to the light emitting surface side can be easily formed. .

  In addition, after removing the board | substrate 1 and the coating | coated member 4 at a 4th process, it is preferable when the surface of the exposed semiconductor layer 2 is roughened. The roughening can be performed by a physical / chemical method, but can be performed by etching in order to reduce damage. For example, the light-emitting element 10 is attached to the support 400 together with an acidic liquid such as phosphoric acid, or an alkaline liquid such as potassium hydroxide, sodium hydroxide, trimethylammonium, tetramethylammonium hydroxide solution, and the surface of the semiconductor layer 2 is attached. The surface can be roughened by etching. Thereby, the light from the semiconductor layer 2 can be extracted efficiently.

(Translucent member forming process)
FIG. 2L is a schematic view illustrating a light transmissive member forming step of the method for manufacturing the light emitting device 1000 according to the present embodiment. The light transmitting member 6 can be provided in the recess 5c formed in the fourth step. By doing so, the surface of the semiconductor layer 2 can be protected. In addition, the light of the light-emitting device 1000 can be made into a desired luminescent color by forming the translucent member 6 containing the wavelength conversion member. Although the translucent member 6 may be comprised only by the wavelength conversion member, what contains a wavelength conversion member in the translucent base material is preferable.

As a material of the base material, an inorganic material such as a resin or glass can be used. In particular, it is preferable to use the above-mentioned resin material because it can be easily provided in the recess 5c. In particular, a silicone resin is preferable from the viewpoints of translucency, heat resistance, and light resistance.
As the wavelength conversion member, for example, a phosphor known in the art can be used. Specifically, yttrium-aluminum-garnet (YAG) phosphors activated with cerium, lutetium-aluminum-garnet (LAG) activated with cerium, nitrogen-containing calcium aluminosilicate activated with europium and / or chromium Nitrides such as (CaO—Al ₂ O ₃ —SiO ₂ ) -based phosphors, europium-activated silicate ((Sr, Ba) ₂ SiO ₄ ) -based phosphors, β sialon phosphors, CASN-based or SCASN-based phosphors Examples thereof include physical phosphors, KSF phosphors (K ₂ SiF ₆ : Mn), and sulfide phosphors. The wavelength conversion member may be, for example, a so-called nanocrystal or a luminescent material called a quantum dot. As these materials, semiconductor materials can be used. Examples of semiconductor materials include II-VI group, III-V group, and IV-VI group semiconductors, specifically, CdSe, and core-shell type CdS _x Se _1. Nano-sized highly dispersed particles such as _-x / ZnS and GaP can be mentioned. The light transmissive member may further contain a filler, a reflective material, a diffusing material, a coloring material, and the like.

In this embodiment, the translucent member 6 in which the wavelength conversion member is contained in the resin that is the base material can be formed in the recess 5c by dropping, spraying, printing, compression molding, transfer molding, or the like. Further, a wavelength conversion sheet in which a wavelength conversion member is contained in a resin or the like, a wavelength conversion plate in which a wavelength conversion member is contained in glass or the like may be bonded to the exposed surface of the semiconductor layer 2. In addition, it can be formed using various methods such as electrodeposition. In addition, the translucent member 6 does not need to include the wavelength conversion member.
The surface of the translucent member 6 formed by the method as described above may be substantially flat or may have irregularities, steps, inclined surfaces, and curved surfaces.

(Sealing member forming step)
In addition, as shown in FIG. 3, a sealing member 7 that further covers the upper surfaces of the light transmitting member 6 and the light reflecting member 5 may be formed. Thereby, the surface of the translucent member 6 and the light reflection member 5 can be protected. Furthermore, a light emitting device 1000 having desired light distribution characteristics can be formed. As the sealing member 7, the same material as the base material of the above-mentioned translucent member 6 can be used, and a silicone resin is particularly preferable from the viewpoint of translucency and heat resistance. The shape is not particularly limited, such as a substantially hemispherical shape or a substantially flat plate shape. In particular, a flat thin sealing member (for example, about 10 to 30 μm) is preferable because a small light emitting device 1000 can be obtained. Examples of the method for forming the sealing member 7 include spraying, sputtering, printing, coating, compression molding, transfer molding, and the like. The sealing member 7 may contain a filler, a reflective material, a diffusion material, a wavelength conversion member, a coloring material, and the like. The sealing member 7 may be formed in a plurality of layers.

(Reflective layer forming process)
As shown in FIG. 4, a reflective layer 8 having a higher reflectance than the light reflecting member 5 may be provided on the inner side surface 5 b of the light reflecting member 5 before forming the light transmissive member 6. Thereby, light can be reflected more efficiently.
Specifically, for example, after forming a mask on the surface of the semiconductor layer 2, the reflective layer 8 may be formed on the inclined surface of the inner surface 5 b of the light reflecting member 5 by a method such as spraying, sputtering, printing, or coating. it can. The reflective layer 8 can be formed of a metal material or an insulating material having a high light reflectance. Examples of the metal material include Ag, an Ag alloy, Al, and Au. In particular, an Ag alloy having high light reflectivity and excellent oxidation resistance is preferable. As the insulating material, a material obtained by adding a light reflective material to a resin can be used. The thickness of the reflective layer 8 is not particularly limited, and can be a thickness (for example, about 20 nm to about 1 μm) that can effectively reflect the light emitted from the semiconductor layer 2. The reflective layer 8 preferably has a reflectance with respect to light from the semiconductor layer 2 of 60% or more, more preferably 70%, 80%, or 90% or more.

  After the fourth step, a light emitting device 1000 is formed by appropriately performing a reflective layer forming step, a translucent member forming step, a sealing member forming step, and the like. In the present embodiment, since the light reflecting member 5 is formed separately for each light emitting element 10 covered with the covering member 4, the light emitting device 1000 shown in FIG. Can be formed. In the third step, when the light reflecting member 5 is integrally formed, the support 400 is removed, and the light reflecting member 5 is cut and separated into individual light emitting devices 1000. 1 can be formed. The singulation can be performed by dicing or the like.

<Embodiment 2>
FIG. 5A is a schematic cross-sectional view of the light-emitting device 2000 according to Embodiment 2. FIG. 5B is a schematic plan view of the light emitting device 2000 according to the second embodiment. In the second embodiment, the covering member 24 is not removed in the fourth step. Therefore, the light emitting device 2000 includes the covering member 24 inside the inner side surface 25 b of the light reflecting member 25. Specifically, as shown in FIG. 5A, the outer surface of the covering member 24 covers the inner surface 25b of the light reflecting member 25, and the light emitting surface side of the light emitting device 1000 is on the outer side than the semiconductor layer 2 side. It is formed so that it may be located in. The inner side surface of the covering member 24 corresponds to the shape of the side surface of the removed substrate 1 and is formed substantially perpendicular to the semiconductor layer 22. As shown in FIG. 5B, the top surface of the covering member 24 (the surface on the light emitting surface side of the light emitting device 2000) in a plan view is a substantially rectangular ring having a substantially circular outer edge. That is, the covering member 24 has a tapered shape in which the thickness decreases from the light emitting surface side of the light emitting device 2000 to the semiconductor layer 22 side. In addition, a translucent member 26 can be provided in the concave portion 25 c (that is, the inside of the covering member 24) made of the covering member 24 and the semiconductor layer 22. Other than that, the configuration is substantially the same as that of the light-emitting device 1000 of Embodiment 1, and a description thereof will be omitted as appropriate.

Hereinafter, in the manufacturing method of the light emitting device 2000 according to the second embodiment, portions different from the manufacturing method of the light emitting device 1000 according to the first embodiment will be mainly described.

  In the present embodiment, as in the first embodiment, the light emitting element 20 is prepared and disposed on the substrate 200. Here, as shown in FIG. 6, the release agent 9 is formed on the side surface 21 c of the substrate 21 of the light emitting element 20. The release agent 9 makes it easy to peel the covering member 24 and the substrate 21, and thus, only the substrate 21 can be removed in the fourth step. The release agent 9 can be appropriately provided by coating or the like before or after the light emitting element 20 is disposed on the substrate 200. The release agent 9 is preferably provided so as to cover all the side surfaces of the substrate 21 of the light emitting element 20, but a part of the side surface may not be covered. Further, the release agent 9 may be disposed on the substrate 200.

As the release agent 9, for example, a volatile agent or the like can be used. Since the volatilizing agent volatilizes by applying predetermined heat, the covering member 24 and the substrate 21 can be easily peeled off. As the volatilizing agent, for example, various solvents and organic substances such as resins can be used.
Specifically, ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone (boiling point: 150 ° C. or less), holon (boiling point: 198 ° C.), cyclohexanone (boiling point: 155 ° C.), methylcyclohexanone (boiling point: 170 ° C.), Tetrahydrofuran, dioxane, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether), ethyl acetate, methylpropyl diglycol, hexyl carbitol, butyl propylene diglycol, benzyl alcohol, butyl carbitol, cyclohexane, methylcyclohexane, cyclohexanone (boiling point: 150) ° C or lower), methyl phenyl ether (boiling point: 153 ° C.), ethyl phenyl ether (172 ° C.), methoxytoluene (boiling point: 172 ° C.), benzyl ethyl ether ( Boiling point: 189 ° C), diethylene glycol dimethyl ether (boiling point: 160 ° C), diethylene glycol diethyl ether (boiling point: 188 ° C), diethylene glycol monomethyl ether (boiling point: 194 ° C), diethylene glycol monobutyl ether (boiling point: 231 ° C), diethylene glycol monobutyl ether acetate ( Examples include ether solvents such as boiling point: 247 ° C., ethylene glycol monobutyl ether (boiling point: 171 ° C.), ethylene glycol monoisoamyl ether (boiling point: 181 ° C.), and butyl carbitol (boiling point: 231 ° C.).

  Further, methanol, ethanol, isopropyl alcohol, n-butyl alcohol (boiling point: 150 ° C. or less), 1-hexanol (boiling point: 157 ° C.), 1-heptanol (boiling point: 176 ° C.), 2-heptanol (boiling point: 160 ° C.) 3-heptanol (boiling point: 156 ° C), 1-octanol (boiling point: 195 ° C), 2-octanol (boiling point: 179 ° C), 2-ethyl-1-hexanol (boiling point: 184 ° C), cyclohexanol (boiling point: 161 ° C), 1-methylcyclohexanol (boiling point: 155 ° C), 2-methylcyclohexanol (boiling point: 165 ° C), 3-methylcyclohexanol (boiling point: 173 ° C), 4-methylcyclohexanol (boiling point: 174 ° C) ), Furfuryl alcohol (boiling point: 170 ° C.), benzyl alcohol ((boiling point: 20 ° C), 1,2-octanediol (boiling point: 131 ° C), 1,8-octanediol (boiling point: 172 ° C), 2-ethyl-1,3-hexanediol (boiling point: 243 ° C), ethylene glycol (boiling point) : 198 ° C), propylene glycol (boiling point: 187 ° C), 1,2-butylene glycol (boiling point: 191 ° C), hexylene glycol (boiling point: 197 ° C), 3-methyl-3-methoxybutanol (boiling point: 174 ° C) ) And alcohol solvents such as butylpropylene diglycol (boiling point: 231 ° C.).

In addition, aromatic organic solvents such as benzene, toluene, xylene (boiling point: 150 ° C. or lower),
Acetate solvents such as 3-methoxy-3-methyl-1-butyl acetate (boiling point: 188 ° C.), ethylene glycol monoacetate (boiling point: 182 ° C.), diethylene glycol monobutyl ether acetate (boiling point: 247 ° C.),
Cyclic carbonate solvents such as propylene carbonate (boiling point: 241 ° C), lactone solvents such as γ-butyrolactone (boiling point: 204 ° C), pyrrolidone solvents such as N-methyl-2-pyrrolidone (boiling point: 202 ° C), α -Pinene (boiling point: 156 ° C), β-pinene (boiling point: 161 ° C), limonene (boiling point: 177 ° C), terpineol (boiling point: 217 ° C), dihydroterpineol (boiling point: 207 ° C), dihydroterpinyl acetate ( Terpene solvents such as boiling point: 220 ° C.).
Other examples include dimethylformamide (boiling point: 153 ° C.) and dimethyl sulfoxide (boiling point: 189 ° C.). These can be used alone or in combination of two or more. Moreover, you may use for these volatilizing agents, adding an organic binder, a viscosity modifier, etc. suitably.

When the volatile agent such as the organic solvent as described above is used as the release agent 9, the release agent 9 can be removed by heat applied when the light reflecting member 25 is formed in the subsequent third step. Thereby, when the board | substrate 21 is removed in a 4th process, it can prevent that the coating | coated member 24 is removed with the board | substrate 21, and can be made to hold | maintain at the light reflection member 25 side.

  Next, in the second step, the inner surface is coated with the release agent 9 provided on the side surface of the light emitting element 20 in the same manner as in the first embodiment, and the outer surface is from the first main surface side of the substrate 21. Also, the covering member 24 located outside is formed on the second main surface side. In the third step, the light reflecting member 25 is formed so as to cover the outer surface of the covering member 24. Subsequently, a part of the light reflecting member 25 is appropriately removed so that the electrodes 23n and 23p of the light emitting element 20 are exposed. Then, the light emitting element 20 on which the light reflecting member 25 is formed is arranged (transferred) from the base body 200 to the support body 400. As shown in FIG. 7, in the light emitting element 20 covered with the light reflecting member 25 disposed (transferred) on the support 400, the second main surface 21 b of the substrate 21 and the covering member 24 are exposed from the light reflecting member 25. To do.

  Then, as shown in FIG. 8, in the fourth step, only the substrate 21 is removed by LLO or the like. Note that a part of the substrate 21 may be left without being removed. Further, a part of the covering member 24 may be removed. After the fourth step, the light emitting device 2000 is formed by appropriately performing a reflective layer forming step, a translucent member forming step, a sealing member forming step, and singulation. Thereby, the light-emitting device 2000 which further has the coating | coated member 24 in the light-emitting device 1000 of Embodiment 1 can be formed.

  In Embodiment 2, since the covering member 24 is not removed, the material of the covering member 24 preferably has translucency. The light transmittance from the semiconductor layer 2 is preferably 60% or more, more preferably 70%, 80%, or 90% or more.

  The covering member 24 may contain a filler, a reflecting material, a diffusing material, a wavelength converting member, a coloring material, and the like. For example, the light-emitting device 2000 with high color rendering can be formed by including different wavelength conversion members in the translucent member 26 and the covering member 24. The covering member 24 and / or the translucent member 26 may not contain a wavelength conversion member. Moreover, the adhesiveness of both members can be improved by making the base material of the coating | coated member 24 and the translucent member 26 into materials, such as the same resin. Furthermore, by making the base material of the covering member 24 and the light reflecting member 25 the same material such as resin, it is possible to improve the adhesion between the two members, and in the fourth step, the covering member 24 is placed on the light reflecting member 25 side. Easy to hold on.

  As mentioned above, although several embodiment was illustrated, it cannot be overemphasized that this invention can be made arbitrary, unless it deviates from the summary of this invention, without being limited to the above-mentioned embodiment.

1000, 2000 ... light emitting device 10,20 ... light emitting element 1,21 ... substrate 1a ... first main surface 1b, 21b ... second main surface 1c, 21c ... side surface 2,22 ... semiconductor layer 2n ... n-type semiconductor layer 2a ... Light-emitting layer 2p ... p-type semiconductor layer 3n, 23n ... n-side electrode 3p, 23p ... p-side electrode 3a ... full surface electrode 3b ... cover electrode H ... protective film 4,24 ... covering member 4a ... inclined surface 5,25 ... light reflection Member 5a, 25a ... Side wall 5b, 25b ... Inner side 5c, 25c ... Recess 6, 26 ... Translucent member 7 ... Sealing member 8 ... Reflective layer 9 ... Release agent 200 ... Base 300, 400 ... Support D ... Dispensing

Claims (13)

A first light emitting device is provided that includes a substrate having a first main surface and a second main surface, a semiconductor layer provided on the first main surface, and an electrode electrically connected to the semiconductor layer. And the process of
A second step of forming a covering member on the side surface of the substrate such that the outer surface on the second main surface side is located outside the first main surface side;
A third step of covering the outer surface of the covering member with a light reflecting member;
And a fourth step of removing the substrate from the semiconductor layer.   The manufacturing method of the light-emitting device according to claim 1, wherein in the second step, the covering member is formed so that the outer surface of the covering member becomes an inclined surface. 3. The method for manufacturing a light emitting device according to claim 1, wherein, in the third step, the light reflecting member covers a surface and a side surface of the semiconductor layer having the electrodes. Prior to the second step, the light emitting element is disposed on the base so that the second main surface side of the substrate is in contact,
The method for manufacturing a light emitting device according to claim 1, wherein the substrate is removed before the fourth step.   The method for manufacturing a light emitting device according to claim 4, wherein the covering member is formed after the light emitting element is disposed on the base. The method for manufacturing a light emitting device according to claim 1, wherein the covering member is further removed in the fourth step.   The method for manufacturing a light-emitting device according to claim 1, wherein the side surface of the substrate is covered with a release agent before the second step.   The manufacturing method of the light-emitting device according to claim 1, wherein the covering member is formed of a light-transmitting material in the third step.   The method for manufacturing a light-emitting device according to claim 1, wherein in the fourth step, the substrate is removed by laser lift-off.   The method for manufacturing a light emitting device according to claim 1, wherein a translucent member is formed in a portion where the substrate is removed after the fourth step.   The method for manufacturing a light-emitting device according to claim 10, wherein the translucent member contains a wavelength conversion member. A light-emitting element having a semiconductor layer and an electrode electrically connected to the semiconductor layer;
A translucent member provided on the upper surface of the semiconductor layer;
A translucent member, covering a side surface of the translucent member, and an outer surface on the upper surface side of the translucent member outside the semiconductor layer side;
And a light reflecting member that covers the outer surface of the covering member.   The light emitting device according to claim 12, wherein the outer surface of the covering member is an inclined surface.

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