JP2016042508A - Electronic element - Google Patents
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- Publication number
- JP2016042508A JP2016042508A JP2014165359A JP2014165359A JP2016042508A JP 2016042508 A JP2016042508 A JP 2016042508A JP 2014165359 A JP2014165359 A JP 2014165359A JP 2014165359 A JP2014165359 A JP 2014165359A JP 2016042508 A JP2016042508 A JP 2016042508A
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- electronic device
- layer
- type semiconductor
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims abstract description 127
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 239000002346 layers by function Substances 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 33
- 229920000642 polymer Polymers 0.000 claims description 24
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000006185 dispersion Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 10
- 230000005525 hole transport Effects 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 6
- 239000011164 primary particle Substances 0.000 claims description 6
- 239000010419 fine particle Substances 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 29
- 238000000576 coating method Methods 0.000 description 22
- 239000011521 glass Substances 0.000 description 18
- 238000010248 power generation Methods 0.000 description 17
- 238000010521 absorption reaction Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- -1 polysiloxane Polymers 0.000 description 15
- 239000002904 solvent Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 12
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000000862 absorption spectrum Methods 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- 238000002835 absorbance Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 229910001507 metal halide Inorganic materials 0.000 description 5
- 150000005309 metal halides Chemical class 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 4
- 229920003319 Araldite® Polymers 0.000 description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000003599 detergent Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920000767 polyaniline Polymers 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920000123 polythiophene Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 3
- 229920002098 polyfluorene Polymers 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910019714 Nb2O3 Inorganic materials 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 238000007611 bar coating method Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 125000005605 benzo group Chemical group 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- OCKPCBLVNKHBMX-UHFFFAOYSA-N butylbenzene Chemical compound CCCCC1=CC=CC=C1 OCKPCBLVNKHBMX-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229940117389 dichlorobenzene Drugs 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000002687 intercalation Effects 0.000 description 2
- 238000009830 intercalation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052976 metal sulfide Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 150000004032 porphyrins Chemical class 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229930195734 saturated hydrocarbon Natural products 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- YTZKOQUCBOVLHL-UHFFFAOYSA-N tert-butylbenzene Chemical compound CC(C)(C)C1=CC=CC=C1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- RELMFMZEBKVZJC-UHFFFAOYSA-N 1,2,3-trichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1Cl RELMFMZEBKVZJC-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
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- MLRVZFYXUZQSRU-UHFFFAOYSA-N 1-chlorohexane Chemical compound CCCCCCCl MLRVZFYXUZQSRU-UHFFFAOYSA-N 0.000 description 1
- SQCZQTSHSZLZIQ-UHFFFAOYSA-N 1-chloropentane Chemical compound CCCCCCl SQCZQTSHSZLZIQ-UHFFFAOYSA-N 0.000 description 1
- VFBJMPNFKOMEEW-UHFFFAOYSA-N 2,3-diphenylbut-2-enedinitrile Chemical group C=1C=CC=CC=1C(C#N)=C(C#N)C1=CC=CC=C1 VFBJMPNFKOMEEW-UHFFFAOYSA-N 0.000 description 1
- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 description 1
- QUVMSYUGOKEMPX-UHFFFAOYSA-N 2-methylpropan-1-olate;titanium(4+) Chemical compound [Ti+4].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-] QUVMSYUGOKEMPX-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- SDDGNMXIOGQCCH-UHFFFAOYSA-N 3-fluoro-n,n-dimethylaniline Chemical compound CN(C)C1=CC=CC(F)=C1 SDDGNMXIOGQCCH-UHFFFAOYSA-N 0.000 description 1
- IGPFOKFDBICQMC-UHFFFAOYSA-N 3-phenylmethoxyaniline Chemical compound NC1=CC=CC(OCC=2C=CC=CC=2)=C1 IGPFOKFDBICQMC-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical class C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Chemical class 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- 229910005451 FeTiO3 Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920000292 Polyquinoline Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021612 Silver iodide Inorganic materials 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 239000006011 Zinc phosphide Substances 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- WVMYSOZCZHQCSG-UHFFFAOYSA-N bis(sulfanylidene)zirconium Chemical compound S=[Zr]=S WVMYSOZCZHQCSG-UHFFFAOYSA-N 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
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- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 description 1
- MVPPADPHJFYWMZ-IDEBNGHGSA-N chlorobenzene Chemical group Cl[13C]1=[13CH][13CH]=[13CH][13CH]=[13CH]1 MVPPADPHJFYWMZ-IDEBNGHGSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
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- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
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- 230000007246 mechanism Effects 0.000 description 1
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- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- UNFUYWDGSFDHCW-UHFFFAOYSA-N monochlorocyclohexane Chemical compound ClC1CCCCC1 UNFUYWDGSFDHCW-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000001792 phenanthrenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000264 poly(3',7'-dimethyloctyloxy phenylene vinylene) Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- ZJMWRROPUADPEA-UHFFFAOYSA-N sec-butylbenzene Chemical compound CCC(C)C1=CC=CC=C1 ZJMWRROPUADPEA-UHFFFAOYSA-N 0.000 description 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- HQASLXJEKYYFNY-UHFFFAOYSA-N selenium(2-);titanium(4+) Chemical compound [Ti+4].[Se-2].[Se-2] HQASLXJEKYYFNY-UHFFFAOYSA-N 0.000 description 1
- HVEIXSLGUCQTMP-UHFFFAOYSA-N selenium(2-);zirconium(4+) Chemical class [Se-2].[Se-2].[Zr+4] HVEIXSLGUCQTMP-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- 229940045105 silver iodide Drugs 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- RCYJPSGNXVLIBO-UHFFFAOYSA-N sulfanylidenetitanium Chemical compound [S].[Ti] RCYJPSGNXVLIBO-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- FAWYJKSBSAKOFP-UHFFFAOYSA-N tantalum(iv) sulfide Chemical compound S=[Ta]=S FAWYJKSBSAKOFP-UHFFFAOYSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- KOECRLKKXSXCPB-UHFFFAOYSA-K triiodobismuthane Chemical compound I[Bi](I)I KOECRLKKXSXCPB-UHFFFAOYSA-K 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229940048462 zinc phosphide Drugs 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
本発明は、電子素子に関する。 The present invention relates to an electronic device.
近年、光エネルギーを利用した電子素子として有機光電変換素子（有機太陽電池、光センサー等）が着目されており、有機光電変換素子は、素子中の有機層の層数を低減できること、有機層を印刷法で製造できることなどの利点を有し、無機光電変換素子と比較して、簡便かつ安価に製造することができる。 In recent years, organic photoelectric conversion elements (organic solar cells, optical sensors, etc.) have attracted attention as electronic elements using light energy, and the organic photoelectric conversion elements can reduce the number of organic layers in the elements. It has advantages such as being able to be manufactured by a printing method, and can be manufactured easily and inexpensively compared to inorganic photoelectric conversion elements.
有機光電変換素子としては、例えば、特許文献１に記載された有機薄膜光電変換素子が知られている。この有機薄膜光電変換素子は、透明導電体層と、該透明導電体層上に配置された正孔輸送層、該正孔輸送層上に配置された光電変換層と、該光電変換層上に配置された電子輸送層と、該電子輸送層上に配置された対極電極を具備し、前記光電変換層がｐ型半導体分子またはｐ型半導体ポリマーとｎ型半導体分子が混在した層で構成された有機薄膜光電変換素子において、前記光電変換層と前記対極電極との間に電子輸送層を形成し、前記光電変換層の最表面に存在しているｐ型半導体と前記電子輸送層が接していることを特徴とするものである。
この特許文献１では、前記有機光電変換素子の製造方法として、高分子化合物であるＰ３ＨＴとフラーレン誘導体とｏ−ジクロロベンゼンとを含む液を用いて活性層を形成し、有機光電変換素子を製造する方法が提案されている。
As an organic photoelectric conversion element, for example, an organic thin film photoelectric conversion element described in Patent Document 1 is known. The organic thin film photoelectric conversion element includes a transparent conductor layer, a hole transport layer disposed on the transparent conductor layer, a photoelectric conversion layer disposed on the hole transport layer, and the photoelectric conversion layer. An electron transport layer disposed; and a counter electrode disposed on the electron transport layer, wherein the photoelectric conversion layer is composed of a p-type semiconductor molecule or a layer in which a p-type semiconductor polymer and an n-type semiconductor molecule are mixed. In the organic thin film photoelectric conversion element, an electron transport layer is formed between the photoelectric conversion layer and the counter electrode, and the p-type semiconductor existing on the outermost surface of the photoelectric conversion layer is in contact with the electron transport layer. It is characterized by this.
In Patent Document 1, as a method for producing the organic photoelectric conversion element, an active layer is formed using a liquid containing P3HT which is a polymer compound, a fullerene derivative, and o-dichlorobenzene, and an organic photoelectric conversion element is produced. A method has been proposed.
しかしながら、上記有機光電変換素子は、光電変換効率が十分ではなく、実用化に向かないという課題がある。 However, the organic photoelectric conversion element has a problem that the photoelectric conversion efficiency is not sufficient and is not suitable for practical use.
本発明は、エネルギー変換効率、特に光電変換効率が高い電子素子を提供することを目的とする。 An object of this invention is to provide an electronic device with high energy conversion efficiency, especially photoelectric conversion efficiency.
本発明は第一に、陽極、陰極、および該陽極と該陰極との間に配置された活性層を備え、該活性層がｐ型半導体とｎ型半導体と酸化物半導体を含む電子素子を提供する。
本発明は第二に、前記活性層が、光電変換層または熱電変換層である電子素子を提供する。
本発明は第三に、前記陽極と前記活性層の間に、少なくとも正孔輸送能を有する第１機能層を備えた電子素子を提供する。
本発明は第四に、前記陰極と前記活性層の間に、少なくとも電子輸送能を有する第２機能層を備えた電子素子を提供する。
本発明は第五に、前記活性層が、ｐ型半導体層と、ｎ型半導体および酸化物半導体を含む混合層とを備えた電子素子を提供する。
本発明は第六に、前記活性層がp型半導体とn型半導体と酸化物半導体の混合物を塗布することにより形成されたものである電子素子を提供する。
本発明は第七に、前記活性層がp型半導体とn型半導体と酸化物半導体が分散した分散液を塗布することにより形成されたものである電子素子を提供する。
本発明は第八に、前記酸化物半導体は、粒子形状のものであり、粒子径が平均一次粒子径１０μｍ以下の微粒子を含む電子素子を提供する。
本発明は第九に、前記酸化物半導体が酸化チタン粒子を含む電子素子を提供する。
本発明は第十に、前記酸化チタン粒子の平均一次粒子径が５ｎｍから８０ｎｍである電子素子を提供する。
本発明は第十一に、前記酸化チタン粒子が二酸化チタンを含む電子素子。
本発明は第十二に、前記活性層のがｐ型半導体および／またはｎ型半導体の少なくとも一部が高分子化合物である電子素子を提供する。
本発明は第十三に、前記高分子化合物の光吸収端波長が７００ｎｍ以上である電子素子を提供する。
本発明は第十四に、陰極および陽極の一方上に、ｐ型半導体層と、ｎ型半導体および酸化物半導体を含む混合物を塗布することにより活性層を形成する工程と、該活性層上に陰極または陽極の他方を形成する工程とを備えた電子素子の製造方法を提供する。
本発明は第十五に、陰極および陽極の一方上に、ｐ型半導体層と、ｎ型半導体および酸化物半導体が分散した分散液を塗布することにより活性層を形成する工程と、該活性層上に陰極または陽極の他方を形成する工程とを備えた電子素子の製造方法を提供する。
本発明は第十六に、陰極および陽極の一方上に、活性層を形成する前に、少なくとも電子輸送能または正孔輸送能一方を有する機能層を形成する電子素子の製造方法を提供する。
本発明は第十七に、前記活性層上に、少なくとも電子輸送能または正孔輸送能一方を有する機能層を形成する電子素子の製造方法を提供する。
The present invention firstly provides an electronic device comprising an anode, a cathode, and an active layer disposed between the anode and the cathode, wherein the active layer includes a p-type semiconductor, an n-type semiconductor, and an oxide semiconductor. To do.
The present invention secondly provides an electronic device wherein the active layer is a photoelectric conversion layer or a thermoelectric conversion layer.
Thirdly, the present invention provides an electronic device including a first functional layer having at least a hole transporting capability between the anode and the active layer.
Fourthly, the present invention provides an electronic device including a second functional layer having at least an electron transporting ability between the cathode and the active layer.
Fifth, the present invention provides an electronic device in which the active layer includes a p-type semiconductor layer and a mixed layer including an n-type semiconductor and an oxide semiconductor.
Sixth, the present invention provides an electronic device in which the active layer is formed by applying a mixture of a p-type semiconductor, an n-type semiconductor, and an oxide semiconductor.
Seventhly, the present invention provides an electronic device in which the active layer is formed by applying a dispersion in which a p-type semiconductor, an n-type semiconductor, and an oxide semiconductor are dispersed.
Eighthly, the present invention provides an electronic device in which the oxide semiconductor has a particle shape and includes fine particles having an average primary particle size of 10 μm or less.
Ninthly, the present invention provides an electronic device in which the oxide semiconductor includes titanium oxide particles.
Tenthly, the present invention provides an electronic device wherein the titanium oxide particles have an average primary particle diameter of 5 nm to 80 nm.
Eleventh aspect of the present invention is an electronic device in which the titanium oxide particles include titanium dioxide.
Twelfthly, the present invention provides an electronic device wherein the active layer is a p-type semiconductor and / or at least part of an n-type semiconductor.
13thly this invention provides the electronic device whose light absorption edge wavelength of the said high molecular compound is 700 nm or more.
Fourteenth aspect of the present invention is a process for forming an active layer by applying a mixture containing a p-type semiconductor layer and an n-type semiconductor and an oxide semiconductor on one of a cathode and an anode, and on the active layer. And a method of forming the other of the cathode and the anode.
According to the fifteenth aspect of the present invention, there is provided a process of forming an active layer by applying a p-type semiconductor layer and a dispersion liquid in which an n-type semiconductor and an oxide semiconductor are dispersed on one of a cathode and an anode; And a method of forming the other of the cathode and the anode.
Sixteenth, the present invention provides a method for producing an electronic device, wherein a functional layer having at least one of an electron transport ability and a hole transport ability is formed on one of a cathode and an anode before forming an active layer.
Seventeenth, the present invention provides a method for producing an electronic device, wherein a functional layer having at least one of an electron transport ability and a hole transport ability is formed on the active layer.
本発明の電子素子は、高いエネルギー変換効率、特に光電変効率を示すので、本発明は工業的に極めて有用である。 Since the electronic device of the present invention exhibits high energy conversion efficiency, particularly photoelectric conversion efficiency, the present invention is extremely useful industrially.
以下に本発明の実施の形態による電子素子を詳細に説明する。 Hereinafter, an electronic device according to an embodiment of the present invention will be described in detail.
本電子素子は、陽極、陰極、および該陽極と該陰極との間に配置された活性層を備えている。本発明の電子素子は、光電変換素子、熱電変換素子等として用いることができるが、以下、光電変換素子として説明する。 The electronic device includes an anode, a cathode, and an active layer disposed between the anode and the cathode. The electronic device of the present invention can be used as a photoelectric conversion device, a thermoelectric conversion device, or the like, and will be described below as a photoelectric conversion device.
前記活性層は、電子供与性化合物としてのｐ型半導体と電子受容性化合物としてのｎ型半導体と酸化物半導体とを含む。この活性層は、膜厚が、１ｎｍ〜１００μｍであることが好ましく、より好ましくは２ｎｍ〜１０００ｎｍであり、さらに好ましくは５ｎｍ〜５００ｎｍであり、特に、２０ｎｍ〜２００ｎｍが好ましい。
前記活性層が有する機能としては、光吸収を行う機能、電荷分離を行う機能、電荷輸送を行う機能、陰極への電子の注入を行う機能、入射した光を反射する機能、活性層自体の劣化を抑制する機能等があげられる。
The active layer includes a p-type semiconductor as an electron donating compound, an n-type semiconductor as an electron accepting compound, and an oxide semiconductor. The active layer preferably has a thickness of 1 nm to 100 μm, more preferably 2 nm to 1000 nm, still more preferably 5 nm to 500 nm, and particularly preferably 20 nm to 200 nm.
The active layer has functions such as light absorption, charge separation, charge transport, injection of electrons into the cathode, reflection of incident light, and deterioration of the active layer itself. And the like.
前記電子供与性化合物としては、低分子化合物であっても高分子化合物であってもよい。低分子化合物としては、フタロシアニン、金属フタロシアニン、ポルフィリン、金属ポルフィリン、オリゴチオフェン、テトラセン、ペンタセン、ルブレン等が挙げられる。高分子化合物としては、ポリビニルカルバゾール及びその誘導体、ポリシラン及びその誘導体、側鎖又は主鎖に芳香族アミンを有するポリシロキサン誘導体、ポリアニリン及びその誘導体、ポリチオフェン及びその誘導体、ポリピロール及びその誘導体、ポリフェニレンビニレン及びその誘導体、ポリチエニレンビニレン及びその誘導体、ポリフルオレン及びその誘導体等が挙げられる。また活性層中における電子供与性化合物は２種類以上の化合物を含んでいても用いてもよい。 The electron donating compound may be a low molecular compound or a high molecular compound. Examples of the low molecular weight compound include phthalocyanine, metal phthalocyanine, porphyrin, metal porphyrin, oligothiophene, tetracene, pentacene, and rubrene. Examples of the polymer compound include polyvinyl carbazole and derivatives thereof, polysilane and derivatives thereof, polysiloxane derivatives having an aromatic amine in the side chain or main chain, polyaniline and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof, polyphenylene vinylene and Examples thereof include polythienylene vinylene and derivatives thereof, polyfluorene and derivatives thereof, and the like. Further, the electron donating compound in the active layer may be used even if it contains two or more kinds of compounds.
前記電子受容性化合物は、電子受容性化合物のＨＯＭＯエネルギーが電子供与性化合物のＨＯＭＯエネルギーよりも高く、かつ、電子受容性化合物のＬＵＭＯエネルギーが電子供与性化合物のＬＵＭＯエネルギーよりも高くなる。 In the electron accepting compound, the HOMO energy of the electron accepting compound is higher than the HOMO energy of the electron donating compound, and the LUMO energy of the electron accepting compound is higher than the LUMO energy of the electron donating compound.
前記電子受容性化合物としては、低分子化合物であっても高分子化合物であってもよい。低分子化合物としては、オキサジアゾール誘導体、アントラキノジメタン及びその誘導体、ベンゾキノン及びその誘導体、ナフトキノン及びその誘導体、アントラキノン及びその誘導体、テトラシアノアンスラキノジメタン及びその誘導体、フルオレノン誘導体、ジフェニルジシアノエチレン及びその誘導体、ジフェノキノン誘導体、８−ヒドロキシキノリン及びその誘導体の金属錯体、ポリキノリン及びその誘導体、ポリキノキサリン及びその誘導体、ポリフルオレン及びその誘導体、Ｃ60等のフラーレン類及びその誘導体、２、９−ジメチル−４、７−ジフェニル−１、１０−フェナントロリン等のフェナントレン誘導体等が挙げられる。高分子化合物としては、ポリビニルカルバゾール及びその誘導体、ポリシラン及びその誘導体、側鎖又は主鎖に芳香族アミンを有するポリシロキサン誘導体、ポリアニリン及びその誘導体、ポリチオフェン及びその誘導体、ポリピロール及びその誘導体、ポリフェニレンビニレン及びその誘導体、ポリチエニレンビニレン及びその誘導体、ポリフルオレン及びその誘導体等が挙げられる。とりわけチタニウムイソプロポキシドやジエチル亜鉛等の酸化物半導体前駆体や金属アルコキシドが好ましい。金属アルコキシドとしてはMg, Ge, B, Li, Na, Fe, Ga, P, Sb, Sn, Ta, Vなどの金属類からなるアルコキシドが挙げられるが、取扱いの容易さからアルミニウムイソプロポキシド、チタニウムイソプロポキシド、チタニウムイソブトキシド、チタニウムイソエトキシド、チタニウムイソプロポキシドポリマー等が好ましい。また活性層中における電子受容性化合物は２種類以上の化合物を含んでいてもよい。 The electron accepting compound may be a low molecular compound or a high molecular compound. Low molecular weight compounds include oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyanoanthraquinodimethane and its derivatives, fluorenone derivatives, diphenyldicyanoethylene and its derivatives, diphenoquinone derivatives, 8-hydroxyquinoline and metal complexes of derivatives thereof, polyquinoline and derivatives thereof, polyquinoxaline and derivatives thereof, polyfluorene and derivatives thereof, fullerenes and derivatives thereof such as C 60, 2,9-dimethyl And phenanthrene derivatives such as -4,7-diphenyl-1,10-phenanthroline. Examples of the polymer compound include polyvinyl carbazole and derivatives thereof, polysilane and derivatives thereof, polysiloxane derivatives having an aromatic amine in the side chain or main chain, polyaniline and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof, polyphenylene vinylene and Examples thereof include polythienylene vinylene and derivatives thereof, polyfluorene and derivatives thereof, and the like. In particular, oxide semiconductor precursors such as titanium isopropoxide and diethyl zinc and metal alkoxides are preferable. Examples of the metal alkoxide include alkoxides made of metals such as Mg, Ge, B, Li, Na, Fe, Ga, P, Sb, Sn, Ta, and V, but aluminum isopropoxide and titanium are easy to handle. Isopropoxide, titanium isobutoxide, titanium isoethoxide, titanium isopropoxide polymer and the like are preferable. Moreover, the electron-accepting compound in the active layer may contain two or more kinds of compounds.
前記フラーレン類としては、Ｃ60、Ｃ70、カーボンナノチューブ、及びその誘導体が挙げられる。フラーレンの誘導体の具体的構造としては、以下のようなものが挙げられる。
前記酸化物半導体は粒子であることが好ましい。酸化物半導体の平均一次粒子径は１０μｍ以下であることが好ましく、更に、１μｍ以下であることが好ましい。特に、電子素子の光電変換効率を高める観点からは、１００ｎｍ以下であることが好ましく、溶媒中への粒子の分散を高める観点からは８０ｎｍ以下から５ｎｍ以上であることが好ましい。酸化物半導体としてはFe2O3、TiO2、Cu2O、In2O3、SrTiO3、WO3、ZnO、Fe2TiO3、BaTiO3、PbO、CaTiO3、V2O5、KTaO3、FeTiO3、SnO2、Bi2O3、ZrO2、Nb2O3などが挙げられるが、これらに限定されるものではない。バンドギャップの観点からはTiO2、ZnO、Nb2O3、SrTiO3などが好ましく、取扱いの観点からはTiO2、ZnOなどがより好ましい。 The oxide semiconductor is preferably a particle. The average primary particle diameter of the oxide semiconductor is preferably 10 μm or less, and more preferably 1 μm or less. In particular, from the viewpoint of increasing the photoelectric conversion efficiency of the electronic device, it is preferably 100 nm or less, and from the viewpoint of increasing dispersion of particles in the solvent, it is preferably 80 nm or less to 5 nm or more. Examples of oxide semiconductors include Fe2O3, TiO2, Cu2O, In2O3, SrTiO3, WO3, ZnO, Fe2TiO3, BaTiO3, PbO, CaTiO3, V2O5, KTaO3, FeTiO3, SnO2, Bi2O3, ZrO2, and Nb2O3. It is not something. From the viewpoint of band gap, TiO2, ZnO, Nb2O3, SrTiO3 and the like are preferable, and from the viewpoint of handling, TiO2, ZnO and the like are more preferable.
酸化物半導体の割合は、電子供与性化合物１００重量部に対して、１〜１０００重量部であることが好ましく、より好ましくは１０〜５００重量部であり、更に好ましくは５０〜３００重量部である。 The ratio of the oxide semiconductor is preferably 1 to 1000 parts by weight, more preferably 10 to 500 parts by weight, and still more preferably 50 to 300 parts by weight with respect to 100 parts by weight of the electron donating compound. .
前記活性層のｐ型半導体および／またはｎ型半導体として用いられる高分子化合物の光吸収端波長は発電特性の観点から、７００ｎｍ以上であることが好ましい。
本発明における光吸収端波長とは以下の方法で求められた値のことを意味する。
測定には、紫外、可視、近赤外の波長領域で動作する分光光度計（例えば、株式会社島津製作所、紫外可視分光光度計ＵＶ−１８００）を用いる。ＵＶ−１８００を用いる場合、測定可能な波長範囲が１９０〜１１００ｎｍであるため、該波長範囲で測定を行う。まず、測定に用いる基板の吸収スペクトルを測定する。基板としては、石英基板、ガラス基板等を用いる。次いで、その基板の上に高分子化合物を含む溶液から高分子化合物を含む薄膜を形成する。溶液からの製膜では、製膜後乾燥を行う。その後、薄膜と基板との積層体の吸収スペクトルを得る。薄膜と基板との積層体の吸収スペクトルと基板の吸収スペクトルとの差を、薄膜の吸収スペクトルとして得る。該薄膜の吸収スペクトルは、縦軸が化合物の吸光度を、横軸が波長を示す。
最も大きい吸収ピークの吸光度が０．１〜１程度になるよう、薄膜の膜厚を調整することが望ましい。吸収ピークの中で一番長波長の吸収ピークの吸光度を１００％とし、その５０％の吸光度を含む横軸（波長軸）に平行な直線と該吸収ピークとの交点であって、該吸収ピークのピーク波長よりも長波長である交点を第１の点とする。その２５％の吸光度を含む波長軸に平行な直線と該吸収ピークとの交点であって、該吸収ピークのピーク波長よりも長波長である交点を第２の点とする。第１の点と第２の点とを結ぶ直線と基準線の交点を光吸収端波長と定義する。ここで、基準線とは、最も長波長の吸収ピークにおいて、該吸収ピークの吸光度を１００％とし、その２０％の吸光度を含む波長軸に平行な直線と該吸収ピークの交点であって、該吸収ピークのピーク波長よりも長波長である交点の波長を基準として、基準となる波長より１００ｎｍ長波長である吸収スペクトル上の第３の点と、基準となる波長より１５０ｎｍ長波長である吸収スペクトル上と第４の点を結んだ直線をいう。
The light absorption edge wavelength of the polymer compound used as the p-type semiconductor and / or n-type semiconductor of the active layer is preferably 700 nm or more from the viewpoint of power generation characteristics.
The light absorption edge wavelength in the present invention means a value obtained by the following method.
For the measurement, a spectrophotometer (for example, Shimadzu Corporation, UV-visible spectrophotometer UV-1800) operating in the ultraviolet, visible, or near-infrared wavelength region is used. When UV-1800 is used, the measurable wavelength range is 190 to 1100 nm, and thus measurement is performed in the wavelength range. First, the absorption spectrum of the substrate used for measurement is measured. As the substrate, a quartz substrate, a glass substrate, or the like is used. Next, a thin film containing a polymer compound is formed on the substrate from a solution containing the polymer compound. In film formation from a solution, drying is performed after film formation. Thereafter, an absorption spectrum of the laminate of the thin film and the substrate is obtained. The difference between the absorption spectrum of the laminate of the thin film and the substrate and the absorption spectrum of the substrate is obtained as the absorption spectrum of the thin film. In the absorption spectrum of the thin film, the vertical axis represents the absorbance of the compound, and the horizontal axis represents the wavelength.
It is desirable to adjust the thickness of the thin film so that the absorbance at the largest absorption peak is about 0.1 to 1. The absorbance of the absorption peak with the longest wavelength among the absorption peaks is defined as 100%, and the intersection of the absorption peak and a straight line parallel to the horizontal axis (wavelength axis) including the absorbance of 50% of the absorption peak. The intersection point that is longer than the peak wavelength is taken as the first point. The intersection point between the absorption peak and a straight line parallel to the wavelength axis containing 25% of the absorbance, which is longer than the peak wavelength of the absorption peak, is defined as a second point. The intersection of the straight line connecting the first point and the second point and the reference line is defined as the light absorption edge wavelength. Here, the reference line is the intersection of the absorption peak with a straight line parallel to the wavelength axis including the absorbance of the absorption peak at the absorption peak of the longest wavelength, with the absorbance of the absorption peak being 100%. The third point on the absorption spectrum that is 100 nm longer than the reference wavelength and the absorption spectrum that is 150 nm longer than the reference wavelength with reference to the wavelength of the intersection that is longer than the peak wavelength of the absorption peak A straight line connecting the top and the fourth point.
前記陰極は金属を含むことが好ましい。陰極中にさらに、金属の酸化物、金属のハロゲン化物を含んでいてもよいが、金属の重量を１００とした場合に、金属の酸化物の重量と金属のハロゲン化物の重量との合計が１０以下であることが好ましく、実質的に、陰極が金属のみからなることがより好ましい。金属としては、リチウム、ベリリウム、ナトリウム、マグネシウム、アルミニウム、カリウム、カルシウム、スカンジウム、チタン、バナジウム、クロム、マンガン、鉄、コバルト、ニッケル、銅、亜鉛、ガリウム、ゲルマニウム、ルビジウム、ストロンチウム、イットリウム、ジルコニウム、ニオブ、モリブデン、ルテニウム、ロジウム、パラジウム、銀、カドミウム、インジウム、スズ、アンチモン、セシウム、バリウム、ランタン、ハフニウム、タンタル、タングステン、レニウム、オスミウム、イリジウム、白金、金、水銀、タリウム、鉛、ビスマス、ランタニド等があげられる。また、これら金属の合金や、グラファイトまたはこれらの金属とグラファイトとの層間化合物等を用いることもできる。金属の中では、アルミニルム、マグネシウム、チタン、クロム、鉄、ニッケル、銅、亜鉛、ガリウム、ジルコニウム、モリブデン、銀、インジウム、スズが好ましい。陰極の作製方法としては、真空蒸着法、スパッタリング法、イオンプレーティング法、メッキ法等が挙げられる。その他、金属インクや金属ペースト、低融点金属等を用いて、塗布法で金属電極を作製することもできる。また、電極材料として、ポリアニリン及びその誘導体、ポリチオフェン及びその誘導体等の有機の導電膜を用いてもよい。 The cathode preferably contains a metal. The cathode may further contain a metal oxide and a metal halide. When the weight of the metal is 100, the total of the weight of the metal oxide and the weight of the metal halide is 10 Preferably, the cathode is substantially composed of only a metal. The metals include lithium, beryllium, sodium, magnesium, aluminum, potassium, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, rubidium, strontium, yttrium, zirconium, Niobium, molybdenum, ruthenium, rhodium, palladium, silver, cadmium, indium, tin, antimony, cesium, barium, lanthanum, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, mercury, thallium, lead, bismuth, Lanthanides and the like. Further, alloys of these metals, graphite, or intercalation compounds of these metals and graphite can be used. Among metals, aluminium, magnesium, titanium, chromium, iron, nickel, copper, zinc, gallium, zirconium, molybdenum, silver, indium, and tin are preferable. Examples of the method for producing the cathode include a vacuum deposition method, a sputtering method, an ion plating method, and a plating method. In addition, a metal electrode can also be produced by a coating method using a metal ink, a metal paste, a low melting point metal, or the like. Further, as the electrode material, an organic conductive film such as polyaniline and a derivative thereof, polythiophene and a derivative thereof may be used.
前記陽極は金属を含むことが好ましい。陽極中にさらに、金属の酸化物、金属のハロゲン化物を含んでいてもよいが、金属の重量を１００とした場合に、金属の酸化物の重量と金属のハロゲン化物の重量の合計が１０以下であることが好ましく、実質的に、陽極が金属のみからなることがより好ましい。金属としては、リチウム、ベリリウム、ナトリウム、マグネシウム、アルミニウム、カリウム、カルシウム、スカンジウム、チタン、バナジウム、クロム、マンガン、鉄、コバルト、ニッケル、銅、亜鉛、ガリウム、ゲルマニウム、ルビジウム、ストロンチウム、イットリウム、ジルコニウム、ニオブ、モリブデン、ルテニウム、ロジウム、パラジウム、銀、カドミウム、インジウム、スズ、アンチモン、セシウム、バリウム、ランタン、ハフニウム、タンタル、タングステン、レニウム、オスミウム、イリジウム、白金、金、水銀、タリウム、鉛、ビスマス、ランタニド等があげられる。また、これら金属の合金や、グラファイトまたはこれらの金属とグラファイトとの層間化合物等を用いることもできる。金属の中では、金、銀、チタン、クロム、鉄、ニッケル、銅、亜鉛、ガリウム、ジルコニウム、モリブデン、インジウム、スズが好ましい。腐食防止の観点からは、金が好ましい。陽極の作製方法としては、真空蒸着法、スパッタリング法、イオンプレーティング法、メッキ法等が挙げられる。その他、金属インクや金属ペースト、低融点金属等を用いて、塗布法で金属電極を作製することもできる。また、電極材料として、ポリアニリン及びその誘導体、ポリチオフェン及びその誘導体等の有機の導電膜を用いてもよい。 The anode preferably contains a metal. The anode may further contain a metal oxide or a metal halide. When the weight of the metal is 100, the total of the weight of the metal oxide and the weight of the metal halide is 10 or less. It is preferable that the anode is substantially made of only metal. The metals include lithium, beryllium, sodium, magnesium, aluminum, potassium, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, rubidium, strontium, yttrium, zirconium, Niobium, molybdenum, ruthenium, rhodium, palladium, silver, cadmium, indium, tin, antimony, cesium, barium, lanthanum, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, mercury, thallium, lead, bismuth, Lanthanides and the like. Further, alloys of these metals, graphite, or intercalation compounds of these metals and graphite can be used. Among metals, gold, silver, titanium, chromium, iron, nickel, copper, zinc, gallium, zirconium, molybdenum, indium and tin are preferable. From the viewpoint of preventing corrosion, gold is preferable. Examples of a method for producing the anode include a vacuum deposition method, a sputtering method, an ion plating method, and a plating method. In addition, a metal electrode can also be produced by a coating method using a metal ink, a metal paste, a low melting point metal, or the like. Further, as the electrode material, an organic conductive film such as polyaniline and a derivative thereof, polythiophene and a derivative thereof may be used.
本電子素子は、通常、透明又は半透明の基板上に形成される。この基板は、電極を形成し、有機物を含む層を形成する際に変化しないものであればよい。基板の材料としては、例えば、ガラス、プラスチック、高分子フィルム、シリコン等が挙げられる。不透明な基板を用いる場合には、反対の電極（即ち、基板から遠い方の電極）が透明又は半透明であることが必要である。 The electronic element is usually formed on a transparent or translucent substrate. This substrate should just be what does not change when forming an electrode and forming the layer containing organic substance. Examples of the material for the substrate include glass, plastic, polymer film, and silicon. When an opaque substrate is used, the opposite electrode (that is, the electrode far from the substrate) needs to be transparent or translucent.
前記の透明又は半透明の電極材料としては、導電性の金属酸化物膜、半透明の金属薄膜等が挙げられる。具体的には、酸化インジウム、酸化亜鉛、酸化スズ、及びそれらの複合体であるインジウム・スズ・オキサイド（ＩＴＯ）、インジウム・亜鉛・オキサイド等からなる導電性材料を用いて作製された膜（ＮＥＳＡ等）や、金、白金、銀、銅等が用いられ、ＩＴＯ、インジウム・亜鉛・オキサイド、酸化スズが好ましい。本発明の電子素子においては、陰極が透明又は半透明であることが好ましい。 Examples of the transparent or translucent electrode material include a conductive metal oxide film and a translucent metal thin film. Specifically, indium oxide, zinc oxide, tin oxide, and a composite film thereof (NESA) manufactured using a conductive material made of indium / tin / oxide (ITO), indium / zinc / oxide, or the like. Etc.), gold, platinum, silver, copper and the like are used, and ITO, indium / zinc / oxide, and tin oxide are preferable. In the electronic device of the present invention, the cathode is preferably transparent or translucent.
本電子素子は、機能層としての有機層を備えていてもよい。この有機層は、高分子化合物からなることが好ましく、導電性が高い高分子化合物からなることがより好ましい。導電性が高い高分子化合物からなる有機層を陽極および活性層に隣接させることで、陽極と活性層の密着性を高めるとともに活性層から電極へのホール（正孔）注入効率を高めることができる。高分子化合物としては、チオフェンジイル基を含む高分子化合物、アニリンジイル基を含む高分子化合物、ピロールジイル基を含む高分子化合物、フルオレンジイル基を含む高分子化合物等があげられる。 The electronic element may include an organic layer as a functional layer. This organic layer is preferably made of a polymer compound, more preferably a polymer compound having high conductivity. By adhering an organic layer made of a high-conductivity polymer compound adjacent to the anode and the active layer, the adhesion between the anode and the active layer can be improved and the efficiency of hole injection from the active layer to the electrode can be increased. . Examples of the polymer compound include a polymer compound containing a thiophene diyl group, a polymer compound containing an aniline diyl group, a polymer compound containing a pyrrole diyl group, and a polymer compound containing a fluorenediyl group.
前記機能層としての有機層は、高分子化合物と溶媒とを含む溶液を塗布することにより形成することができる。塗布する方法としては、活性層を形成する方法と同様の方法を用いることができる。有機層が有する機能としては、電極への正孔の注入効率を高める機能、活性層からの電子の注入を防ぐ機能、正孔の輸送能を高める機能、電極を蒸着する際の平坦性を高める機能、電極を塗布法で作製する場合に活性層を溶媒の浸食から保護する機能、電極から入射した光を反射する機能、活性層の劣化を抑制する機能等があげられる。 The organic layer as the functional layer can be formed by applying a solution containing a polymer compound and a solvent. As a coating method, a method similar to the method of forming the active layer can be used. Functions that the organic layer has include a function that increases the efficiency of hole injection into the electrode, a function that prevents the injection of electrons from the active layer, a function that increases the hole transport capability, and a flatness when the electrode is deposited. Examples thereof include a function, a function of protecting the active layer from erosion of the solvent when the electrode is produced by a coating method, a function of reflecting light incident from the electrode, and a function of suppressing deterioration of the active layer.
本発明の電子素子は、さらに陰極と活性層の間に配される機能層としての無機層を有していてもよい。陰極への電子の注入効率を高める。該無機層に含まれる材料としては、例えば、酸化チタン、酸化スズ、酸化亜鉛、酸化鉄、酸化タングステン、酸化ジルコニウム、酸化ハフニウム、酸化ストロンチウム、酸化インジウム、酸化セリウム、酸化イットリウム、酸化ランタン、酸化バナジウム、酸化ニオブ、酸化タンタル、酸化ガリウム、酸化ニッケル、チタン酸ストロンチウム、チタン酸バリウム、ニオブ酸カリウム、タンタル酸ナトリウム等の金属酸化物；ヨウ化銀、臭化銀、ヨウ化銅、臭化銅等の金属ハロゲン化物；硫化亜鉛、硫化チタン、硫化インジウム、硫化ビスマス、硫化カドミウム、硫化ジルコニウム、硫化タンタル、硫化モリブデン、硫化銀、硫化銅、硫化スズ、硫化タングステン、硫化アンチモン等の金属硫化物；セレン化カドミウム、セレン化ジルコニウム、セレン化亜鉛、セレン化チタン、セレン化インジウム、セレン化タングステン、セレン化モリブデン、セレン化ビスマス、セレン化鉛等の金属セレン化物；テルル化カドミウム、テルル化タングステン、テルル化モリブデン、テルル化亜鉛、テルル化ビスマス等の金属テルル化物；リン化亜鉛、リン化ガリウム、リン化インジウム、リン化カドミウム等の金属リン化物；フッ化リチウム等の金属のハロゲン化物ガリウム砒素、銅−インジウム−セレン化物、銅−インジウム−硫化物、シリコン、ゲルマニウム等が挙げられ、また、これらの２種以上の混合物であってもよい。混合物としては、例えば酸化亜鉛と酸化スズとの混合物、および酸化スズと酸化チタンとの混合物等が挙げられる。 The electronic device of the present invention may further have an inorganic layer as a functional layer disposed between the cathode and the active layer. Increase the efficiency of electron injection into the cathode. Examples of the material contained in the inorganic layer include titanium oxide, tin oxide, zinc oxide, iron oxide, tungsten oxide, zirconium oxide, hafnium oxide, strontium oxide, indium oxide, cerium oxide, yttrium oxide, lanthanum oxide, and vanadium oxide. , Niobium oxide, tantalum oxide, gallium oxide, nickel oxide, strontium titanate, barium titanate, potassium niobate, sodium tantalate, etc .; silver iodide, silver bromide, copper iodide, copper bromide, etc. Metal sulfides of: metal sulfides such as zinc sulfide, titanium sulfide, indium sulfide, bismuth sulfide, cadmium sulfide, zirconium sulfide, tantalum sulfide, molybdenum sulfide, silver sulfide, copper sulfide, tin sulfide, tungsten sulfide, and antimony sulfide; selenium Cadmium and zirconium selenides Metal selenides such as zinc selenide, titanium selenide, indium selenide, tungsten selenide, molybdenum selenide, bismuth selenide, lead selenide; cadmium telluride, tungsten telluride, molybdenum telluride, zinc telluride, tellurium Metal tellurides such as bismuth iodide; metal phosphides such as zinc phosphide, gallium phosphide, indium phosphide, cadmium phosphide; metal halides such as lithium fluoride gallium arsenide, copper-indium selenide, copper- Indium sulfide, silicon, germanium and the like can be mentioned, and a mixture of two or more of these may be used. Examples of the mixture include a mixture of zinc oxide and tin oxide, a mixture of tin oxide and titanium oxide, and the like.
前記電子素子の製造方法は、陰極および陽極の一方上に、ｐ型半導体層と、ｎ型半導体および酸化物半導体を含む混合物またはｐ型半導体層と、ｎ型半導体および酸化物半導体が分散した分散液を塗布することにより活性層を形成する工程と、該活性層上に陰極または陽極の他方を形成する工程とを備えている。機能層を持つ場合は、活性層は、この機能層上に形成される。
活性層は、具体的には、例えば、溶媒と共役高分子化合物とチタニウムイソプロポキシドと酸化物半導体微粒子とを含む組成物からの成膜による形成される。成膜には、下記の塗布方法を用いることが好ましい。
The method of manufacturing the electronic device includes a p-type semiconductor layer, a mixture containing an n-type semiconductor and an oxide semiconductor or a p-type semiconductor layer, and a dispersion in which the n-type semiconductor and the oxide semiconductor are dispersed on one of a cathode and an anode. The method includes a step of forming an active layer by applying a liquid and a step of forming the other of the cathode and the anode on the active layer. In the case of having a functional layer, the active layer is formed on this functional layer.
Specifically, the active layer is formed, for example, by film formation from a composition containing a solvent, a conjugated polymer compound, titanium isopropoxide, and oxide semiconductor fine particles. The following coating method is preferably used for film formation.
分散液に含まれる溶媒としては、水及び有機溶媒が例示される。有機溶媒としては、例えば、トルエン、キシレン、メシチレン、テトラリン、デカリン、ビシクロヘキシル、ｎ−ブチルベンゼン、ｓｅｃ−ブチルベンゼン、ｔｅｒｔ−ブチルベンゼン等の不飽和炭化水素溶媒、四塩化炭素、クロロホルム、ジクロロメタン、ジクロロエタン、クロロブタン、ブロモブタン、クロロペンタン、ブロモペンタン、クロロヘキサン、ブロモヘキサン、クロロシクロヘキサン、ブロモシクロヘキサン等のハロゲン化飽和炭化水素溶媒（特に、塩素化飽和炭化水素溶媒）、クロロベンゼン、ジクロロベンゼン、トリクロロベンゼン等のハロゲン化不飽和炭化水素溶媒（特に、塩素化不飽和炭化水素溶媒）、テトラヒドロフラン、テトラヒドロピラン、ジフェニルエーテル等のエーテル溶媒が挙げられる。高分子化合物の溶解性の観点からは、ハロゲン化不飽和炭化水素溶媒が好ましく、芳香族塩素化合物がより好ましく、ジクロロベンゼンがさらに好ましく、オルトジクロロベンゼンが特に好ましい。本発明に用いられる分散液中に、これらの溶媒を２種類以上含んでいてもよい。
また溶媒中での酸化物半導体の分散を高めるためには、分散液に分散剤を添加しても良い。該分散剤としては酢酸、塩酸、硝酸、硫酸、などがあげられる。
Examples of the solvent contained in the dispersion include water and organic solvents. Examples of the organic solvent include unsaturated hydrocarbon solvents such as toluene, xylene, mesitylene, tetralin, decalin, bicyclohexyl, n-butylbenzene, sec-butylbenzene, tert-butylbenzene, carbon tetrachloride, chloroform, dichloromethane, Halogenated saturated hydrocarbon solvents (particularly chlorinated saturated hydrocarbon solvents) such as dichloroethane, chlorobutane, bromobutane, chloropentane, bromopentane, chlorohexane, bromohexane, chlorocyclohexane, bromocyclohexane, chlorobenzene, dichlorobenzene, trichlorobenzene, etc. And halogenated unsaturated hydrocarbon solvents (especially chlorinated unsaturated hydrocarbon solvents), ether solvents such as tetrahydrofuran, tetrahydropyran, and diphenyl ether. From the viewpoint of the solubility of the polymer compound, a halogenated unsaturated hydrocarbon solvent is preferable, an aromatic chlorine compound is more preferable, dichlorobenzene is further preferable, and orthodichlorobenzene is particularly preferable. Two or more of these solvents may be included in the dispersion used in the present invention.
In order to increase the dispersion of the oxide semiconductor in the solvent, a dispersant may be added to the dispersion. Examples of the dispersant include acetic acid, hydrochloric acid, nitric acid, sulfuric acid and the like.
前記の塗布する方法としては、スピンコート法、キャスティング法、マイクログラビアコート法、グラビアコート法、バーコート法、ロールコート法、ワイアーバーコート法、ディップコート法、スプレーコート法、スクリーン印刷法、フレキソ印刷法、オフセット印刷法、インクジェット印刷法、ディスペンサー印刷法、ノズルコート法、キャピラリーコート法等の塗布法を用いることができ、スピンコート法、フレキソ印刷法、インクジェット印刷法、ディスペンサー印刷法が好ましい。 Examples of the coating method include spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, spray coating method, screen printing method, flexographic method. Coating methods such as a printing method, an offset printing method, an ink jet printing method, a dispenser printing method, a nozzle coating method, a capillary coating method can be used, and a spin coating method, a flexographic printing method, an ink jet printing method, and a dispenser printing method are preferable.
電子素子の具体例としては、
１．陽極と陰極と、該陽極と該陰極との間に電子受容性化合物と酸化物半導体を含有する第一の活性層と、該第一の活性層に隣接して設けられた電子供与性化合物を含有する第二の活性層と、該陰極と該第一の活性層との間に該陰極に隣接して設けられた機能層とを有する電子素子；
２．陽極と陰極と、該陽極と該陰極との間に電子受容性化合物と酸化物半導体を含有する第一の活性層と、該第一の活性層に隣接して設けられた電子供与性化合物を含有する第二の活性層と、該陽極と該第一の活性層との間に該陽極に隣接して設けられた機能層とを有する電子素子；
３．陽極と陰極と、該陽極と該陰極との間に電子受容性化合物と酸化物半導体を含有する第一の活性層と、該第一の活性層に隣接して設けられた電子供与性化合物を含有する第二の活性層と、該陰極と該第一の活性層との間に該陰極に隣接して設けられた機能層と、該陽極と該第一の活性層との間に該陽極に隣接して設けられた機能層とを有する電子素子
４．陽極と陰極と、該陽極と該陰極との間に電子受容性化合物と電子供与性化合物と酸化物半導体を含有する活性層と、該陰極と該活性層との間に該陰極に隣接して設けられた機能層とを有する電子素子；
５．陽極と陰極と、該陽極と該陰極との間に電子受容性化合物と電子供与性化合物と酸化物半導体を含有する活性層と、該陽極と該活性層との間に該陽極に隣接して設けられた機能層とを有する電子素子;および
６．陽極と陰極と、該陽極と該陰極との間に電子受容性化合物と電子供与性化合物と酸化物半導体を含有する活性層と、該陰極と該活性層との間に該陰極に隣接して設けられた機能層と、該陽極と該活性層との間に該陽極に隣接して設けられた機能層とを有する電子素子：
が挙げられる。
Specific examples of electronic elements include
1. An anode, a cathode, a first active layer containing an electron-accepting compound and an oxide semiconductor between the anode and the cathode, and an electron-donating compound provided adjacent to the first active layer An electronic device comprising: a second active layer contained; and a functional layer provided adjacent to the cathode between the cathode and the first active layer;
2. An anode, a cathode, a first active layer containing an electron-accepting compound and an oxide semiconductor between the anode and the cathode, and an electron-donating compound provided adjacent to the first active layer An electronic device comprising: a second active layer containing; and a functional layer provided adjacent to the anode between the anode and the first active layer;
3. An anode, a cathode, a first active layer containing an electron-accepting compound and an oxide semiconductor between the anode and the cathode, and an electron-donating compound provided adjacent to the first active layer A second active layer containing, a functional layer provided adjacent to the cathode between the cathode and the first active layer, and the anode between the anode and the first active layer 3. an electronic device having a functional layer provided adjacent to An anode, a cathode, an active layer containing an electron-accepting compound, an electron-donating compound, and an oxide semiconductor between the anode and the cathode, and adjacent to the cathode between the cathode and the active layer An electronic device having a functional layer provided;
5. An active layer containing an electron-accepting compound, an electron-donating compound, and an oxide semiconductor between the anode and the cathode, the anode and the cathode, and the anode and the active layer adjacent to the anode 5. an electronic device having a functional layer provided; and An anode, a cathode, an active layer containing an electron-accepting compound, an electron-donating compound, and an oxide semiconductor between the anode and the cathode, and adjacent to the cathode between the cathode and the active layer An electronic device having a functional layer provided and a functional layer provided adjacent to the anode between the anode and the active layer:
Is mentioned.
電子素子としてはヘテロ接合界面を多く含むという観点からは、前記４から前記６．の素子がより好ましい。 From the viewpoint of including many heterojunction interfaces as electronic elements, the above-mentioned 4 to 6. The element is more preferable.
次に、電子素子の動作機構を説明する。透明又は半透明の電極から入射した光エネルギーが電子受容性化合物及び／又は電子供与性化合物で吸収され、電子とホールの結合した励起子を生成する。生成した励起子が移動して、電子受容性化合物と電子供与性化合物が隣接しているヘテロ接合界面に達すると界面でのそれぞれのＨＯＭＯエネルギー及びＬＵＭＯエネルギーの違いにより電子とホールが分離し、独立に動くことができる電荷（電子とホール）が発生する。発生した電荷は、それぞれ電極へ移動することにより外部へ電気エネルギー（電流）として取り出すことができる。 Next, the operation mechanism of the electronic element will be described. Light energy incident from a transparent or translucent electrode is absorbed by the electron-accepting compound and / or the electron-donating compound to generate excitons in which electrons and holes are combined. When the generated excitons move and reach the heterojunction interface where the electron-accepting compound and the electron-donating compound are adjacent to each other, electrons and holes are separated due to the difference in HOMO energy and LUMO energy at the interface. Electric charges (electrons and holes) that can move are generated. The generated charges can be taken out as electric energy (current) by moving to the electrodes.
本発明の電子素子は、透明又は半透明の電極から太陽光等の光を照射することにより、電極間に光起電力が発生し、薄膜太陽電池として動作させることができる。薄膜太陽電池を複数集積することにより薄膜太陽電池モジュールとして用いることもできる。 The electronic device of the present invention can be operated as a thin film solar cell by generating a photovoltaic force between the electrodes by irradiating light such as sunlight from a transparent or translucent electrode. It can also be used as a thin film solar cell module by integrating a plurality of thin film solar cells.
また、電極間に電圧を印加した状態で、透明又は半透明の電極から光を照射することにより、光電流が流れ、光センサーとして動作させることができる。光センサーを複数集積することによりイメージセンサーとして用いることもできる。 Further, by applying light from a transparent or translucent electrode in a state where a voltage is applied between the electrodes, a photocurrent flows and it can be operated as a photosensor. It can also be used as an image sensor by integrating a plurality of optical sensors.
以下、本発明をさらに詳細に説明するために実施例を示すが、本発明はこれらに限定されるものではない。 Examples will be shown below for illustrating the present invention in more detail, but the present invention is not limited to these examples.
＜実施例＞
膜厚約１５０ｎｍのＩＴＯがパターニングされたガラス基板を、有機溶媒、アルカリ洗剤、及び超純水で洗浄し、乾燥させた。フィルジェン製ＵＶオゾンクリーナーＵＶ２５３Ｅを用い、該ガラス基板に紫外線オゾン（ＵＶ−Ｏ3）処理を施した。
次に、１−Ｍａｔｅｒｉａｌ社より購入したＰｏｌｙ［［４，８−ｂｉｓ［（２−ｅｔｈｙｌｈｅｘｙｌ）ｏｘｙ］ｂｅｎｚｏ［１，２−ｂ：４，５−ｂ‘］ｄｉｔｈｉｏｐｈｅｎｅ−２，６−ｄｉｙｌ］［３−ｆｌｕｏｒｏ−２−［（２−ｅｔｈｙｌｈｅｘｙｌ）ｃａｒｂｏｎｙｌ］ｔｈｉｅｎｏ［３，４−ｂ］ｔｈｉｏｐｈｅｎｅｄｉｙｌ］］（ＰＴＢ７）とＳＩＧＭＡＳ ＡＬＤＲＩＣＨ社より購入したＴｉｔａｎｉｕｍ（ＩＶ）ｉｓｏｐｒｏｐｏｘｉｄｅ９７％をクロロベンゼンの重量に対してそれぞれ０．５重量％、１．０重量％となるように添加し、更に日本アエロジル社製の酸化チタン微粒子Ｐ２５（平均一次粒子径３０nm）の粉体をエタノール中に３重量％の濃度になるように調整した液を、ビーズミルを用いてφ０．１ｍｍのジルコニアビーズにて分散させ、その分散液をクロロベンゼンに対して１１．５重量％添加し、発電層を作製するための塗布溶液を作製した。分散液の作製にはアシザワ・ファインテック株式会社製のビーズミル、ラボスターミニＨＦＭ０２を用いた。分散前のエタノール中の酸化チタンの平均粒子径は４．９μmであり最大粒子径は５２．３μmであった。ビーズミルにて分散した分散液中のＰ２５の平均粒子径は１８８ｎｍあり、最大粒子径は５７８nmであった。活性層中に含まれる高分子化合物の吸収端波長は７５３ｎｍであった。
次いで塗布溶液中にスターラーチップを投入し、６００ｒｐｍの回転数で攪拌混合を行った。攪拌混合は温度可変機能付きホットスターラー上で行い、設定温度を８０℃とした。その後、ガラス基板上に塗布溶液をスピンコートした後、乾燥を行い、発電層を形成した。発電層の膜厚は１０５ｎｍであった。膜厚の測定にはアルバック社製ＤｅｋｔａｋＸＴ−Ｅを用いた。続いてＨｅｒａｅｕｓ社より購入したＣＬＥＶＩＯＳＳＶ３をバーコーターにより塗布し、乾燥させることにより電極を形成した。次いで、エポキシ樹脂（急速硬化型アラルダイト）を封止材として用いてガラス基板を接着することで封止処理を施し、電子素子を得た。電子素子の発電面積は5mm×20mmであった。この電子素子にソーラシミュレーター（三永電機製作所、商品名：XES-40S1、放射照度１００ｍＷ／ｃｍ2）を用いて一定の光を照射し、発生する電圧を測定した。発生した電圧は４０６．６ｍＶであった。
<Example>
A glass substrate on which ITO having a thickness of about 150 nm was patterned was washed with an organic solvent, an alkaline detergent, and ultrapure water and dried. Using UV UV cleaner UV253E manufactured by Filgen, the glass substrate was subjected to ultraviolet ozone (UV-O 3 ) treatment.
Next, Poly [[4,8-bis [(2-ethylhexyl) oxy] benzo [1,2-b: 4,5-b ′] dithiophene-2,6-diyl] [1 purchased from 1-Material Co. 3-fluor-2--2-[(2-ethylhexyl) carbonyl] thieno [3,4-b] thiophenedylyl]] (PTB7) and Titanium (IV) isopropoxide 97% purchased from SIGMAS ALDRICH, respectively, with respect to the weight of chlorobenzene are 0%. 0.5 wt% and 1.0 wt% were added, and the powder of titanium oxide fine particles P25 (average primary particle size 30 nm) manufactured by Nippon Aerosil Co., Ltd. was adjusted to a concentration of 3 wt% in ethanol. The prepared solution is 0.1 mm in diameter using a bead mill. Dispersed in Rukoniabizu, the dispersion was added 11.5% by weight relative to the chlorobenzene to prepare a coating solution for producing a power generation layer. A bead mill manufactured by Ashizawa Finetech Co., Ltd. and Labo Star Mini HFM02 were used for the preparation of the dispersion. The average particle size of titanium oxide in ethanol before dispersion was 4.9 μm, and the maximum particle size was 52.3 μm. The average particle size of P25 in the dispersion liquid dispersed by a bead mill was 188 nm, and the maximum particle size was 578 nm. The absorption edge wavelength of the polymer compound contained in the active layer was 753 nm.
Next, a stirrer chip was put into the coating solution, and stirring and mixing were performed at a rotation speed of 600 rpm. The stirring and mixing was performed on a hot stirrer with a temperature variable function, and the set temperature was 80 ° C. Then, after spin-coating the coating solution on the glass substrate, it dried and formed the electric power generation layer. The film thickness of the power generation layer was 105 nm. DektakXT-E manufactured by ULVAC, Inc. was used for the measurement of the film thickness. Subsequently, CLEVIOSSV3 purchased from Heraeus was applied with a bar coater and dried to form an electrode. Next, an epoxy resin (rapid curing type Araldite) was used as a sealing material, and a glass substrate was adhered to perform a sealing process to obtain an electronic device. The power generation area of the electronic element was 5 mm × 20 mm. This electronic element was irradiated with a certain amount of light using a solar simulator (Minaga Electric Manufacturing Co., Ltd., trade name: XES-40S1, irradiance 100 mW / cm 2 ), and the generated voltage was measured. The generated voltage was 406.6 mV.
＜比較例１＞
膜厚約１５０ｎｍのＩＴＯがパターニングされたガラス基板を、有機溶媒、アルカリ洗剤、及び超純水で洗浄し、乾燥させた。フィルジェン製ＵＶオゾンクリーナーＵＶ２５３Ｅを用い、該ガラス基板に紫外線オゾン（ＵＶ−Ｏ3）処理を施した。
次に、１−Ｍａｔｅｒｉａｌ社より購入したＰｏｌｙ［［４，８−ｂｉｓ［（２−ｅｔｈｙｌｈｅｘｙｌ）ｏｘｙ］ｂｅｎｚｏ［１，２−ｂ：４，５−ｂ‘］ｄｉｔｈｉｏｐｈｅｎｅ−２，６−ｄｉｙｌ］［３−ｆｌｕｏｒｏ−２−［（２−ｅｔｈｙｌｈｅｘｙｌ）ｃａｒｂｏｎｙｌ］ｔｈｉｅｎｏ［３，４−ｂ］ｔｈｉｏｐｈｅｎｅｄｉｙｌ］］（ＰＴＢ７）とＳＩＧＭＡＳ ＡＬＤＲＩＣＨ社より購入したＴｉｔａｎｉｕｍ（ＩＶ）ｉｓｏｐｒｏｐｏｘｉｄｅ９７％をクロロベンゼンの重量に対してそれぞれ０．５重量％、１．０重量％となるように添加し、発電層を作製するための塗布溶液を作製した。活性層中に含まれる高分子化合物の吸収端波長は７５３ｎｍであった。次いで塗布溶液中にスターラーチップを投入し、６００ｒｐｍの回転数で攪拌混合を行った。攪拌混合は温度可変機能付きホットスターラー上で行い、設定温度を８０℃とした。その後、ガラス基板上に塗布溶液をスピンコートした後、乾燥を行い、発電層を形成した。発電層の膜厚は９８ｎｍであった。膜厚の測定にはアルバック社製ＤｅｋｔａｋＸＴ−Ｅを用いた。続いてＨｅｒａｅｕｓ社より購入したＣＬＥＶＩＯＳＳＶ３をバーコーターにより塗布し、乾燥させることにより電極を形成した。次いで、エポキシ樹脂（急速硬化型アラルダイト）を封止材として用いてガラス基板を接着することで封止処理を施し、電子素子を得た。電子素子の発電面積は5mm×20mmであった。この電子素子にソーラシミュレーター（三永電機製作所、商品名：XES-40S1、放射照度１００ｍＷ／ｃｍ2）を用いて一定の光を照射し、発生する電圧を測定した。発生した電圧は３９３ｍＶであった。
<Comparative Example 1>
A glass substrate on which ITO having a thickness of about 150 nm was patterned was washed with an organic solvent, an alkaline detergent, and ultrapure water and dried. Using UV UV cleaner UV253E manufactured by Filgen, the glass substrate was subjected to ultraviolet ozone (UV-O 3 ) treatment.
Next, Poly [[4,8-bis [(2-ethylhexyl) oxy] benzo [1,2-b: 4,5-b ′] dithiophene-2,6-diyl] [1 purchased from 1-Material Co. 3-fluor-2--2-[(2-ethylhexyl) carbonyl] thieno [3,4-b] thiophenedylyl]] (PTB7) and Titanium (IV) isopropoxide 97% purchased from SIGMAS ALDRICH, respectively, with respect to the weight of chlorobenzene are 0%. It added so that it might become 0.5 weight% and 1.0 weight%, and the coating solution for producing a power generation layer was produced. The absorption edge wavelength of the polymer compound contained in the active layer was 753 nm. Next, a stirrer chip was put into the coating solution, and stirring and mixing were performed at a rotation speed of 600 rpm. The stirring and mixing was performed on a hot stirrer with a temperature variable function, and the set temperature was 80 ° C. Then, after spin-coating the coating solution on the glass substrate, it dried and formed the electric power generation layer. The film thickness of the power generation layer was 98 nm. DektakXT-E manufactured by ULVAC, Inc. was used for the measurement of the film thickness. Subsequently, CLEVIOSSV3 purchased from Heraeus was applied with a bar coater and dried to form an electrode. Next, an epoxy resin (rapid curing type Araldite) was used as a sealing material, and a glass substrate was adhered to perform a sealing process to obtain an electronic device. The power generation area of the electronic element was 5 mm × 20 mm. This electronic element was irradiated with a certain amount of light using a solar simulator (Minaga Electric Manufacturing Co., Ltd., trade name: XES-40S1, irradiance 100 mW / cm 2 ), and the generated voltage was measured. The generated voltage was 393 mV.
＜比較例２＞
膜厚約１５０ｎｍのＩＴＯがパターニングされたガラス基板を、有機溶媒、アルカリ洗剤、及び超純水で洗浄し、乾燥させた。フィルジェン製ＵＶオゾンクリーナーＵＶ２５３Ｅを用い、該ガラス基板に紫外線オゾン（ＵＶ−Ｏ3）処理を施した。
次に、ＳＩＧＭＡＳ ＡＬＤＲＩＣＨ社より購入したＰｏｌｙ（３−ｈｅｘｙｌｔｈｉｏｐｈｅｎｅ−２，５−ｄｉｙｌ）（Ｐ３ＨＴ）とＳＩＧＭＡＳ ＡＬＤＲＩＣＨ社より購入したＴｉｔａｎｉｕｍ（ＩＶ）ｉｓｏｐｒｏｐｏｘｉｄｅ９７％をクロロベンゼンの重量に対してそれぞれ０．５重量％、１．０重量％となるように添加し、発電層を作製するための塗布溶液を作製した。活性層中に含まれる高分子化合物の吸収端波長は６５５ｎｍであった。次いで塗布溶液中にスターラーチップを投入し、６００ｒｐｍの回転数で攪拌混合を行った。攪拌混合は温度可変機能付きホットスターラー上で行い、設定温度を８０℃とした。その後、ガラス基板上に塗布溶液をスピンコートした後、乾燥を行い、発電層を形成した。発電層の膜厚は９０ｎｍであった。膜厚の測定にはアルバック社製ＤｅｋｔａｋＸＴ−Ｅを用いた。
続いてＨｅｒａｅｕｓ社より購入したＣＬＥＶＩＯＳＳＶ３をバーコーターにより塗布し、乾燥させることにより電極を形成した。次いで、エポキシ樹脂（急速硬化型アラルダイト）を封止材として用いてガラス基板を接着することで封止処理を施し、電子素子を得た。電子素子の発電面積は5mm×20mmであった。この電子素子にソーラシミュレーター（三永電機製作所、商品名：XES-40S1、放射照度１００ｍＷ／ｃｍ2）を用いて一定の光を照射し、発生する電圧を測定した。発生した電圧は２６０ｍＶであった。
<Comparative Example 2>
A glass substrate on which ITO having a thickness of about 150 nm was patterned was washed with an organic solvent, an alkaline detergent, and ultrapure water and dried. Using UV UV cleaner UV253E manufactured by Filgen, the glass substrate was subjected to ultraviolet ozone (UV-O 3 ) treatment.
Next, Poly (3-hexylthiophene-2,5-diyl) (P3HT) purchased from SIGMAS ALDRICH and Titanium (IV) isopropoxide 97% purchased from SIGMA ALDRICH were each 0.5% by weight based on the weight of chlorobenzene. The coating solution for preparing the power generation layer was prepared by adding 1.0% by weight. The absorption edge wavelength of the polymer compound contained in the active layer was 655 nm. Next, a stirrer chip was put into the coating solution, and stirring and mixing were performed at a rotation speed of 600 rpm. The stirring and mixing was performed on a hot stirrer with a temperature variable function, and the set temperature was 80 ° C. Then, after spin-coating the coating solution on the glass substrate, it dried and formed the electric power generation layer. The film thickness of the power generation layer was 90 nm. DektakXT-E manufactured by ULVAC, Inc. was used for the measurement of the film thickness.
Subsequently, CLEVIOSSV3 purchased from Heraeus was applied with a bar coater and dried to form an electrode. Next, an epoxy resin (rapid curing type Araldite) was used as a sealing material, and a glass substrate was adhered to perform a sealing process to obtain an electronic device. The power generation area of the electronic element was 5 mm × 20 mm. This electronic element was irradiated with a certain amount of light using a solar simulator (Minaga Electric Manufacturing Co., Ltd., trade name: XES-40S1, irradiance 100 mW / cm 2 ), and the generated voltage was measured. The generated voltage was 260 mV.
＜比較例３＞
膜厚約１５０ｎｍのＩＴＯがパターニングされたガラス基板を、有機溶媒、アルカリ洗剤、及び超純水で洗浄し、乾燥させた。フィルジェン製ＵＶオゾンクリーナーＵＶ２５３Ｅを用い、該ガラス基板に紫外線オゾン（ＵＶ−Ｏ3）処理を施した。
次に、ＳＩＧＭＡＳ ＡＬＤＲＩＣＨ社より購入したＰｏｌｙ［２−ｍｅｔｈｏｘｙ−５−（３‘，７’−ｄｉｍｅｔｈｙｌｏｃｔｙｌｏｘｙ）−１，４−ｐｈｅｎｙｌｅｎｅｖｉｎｙｌｅｎｅ］（ＭＤＭＯ−ＰＰＶ）とＳＩＧＭＡＳ ＡＬＤＲＩＣＨ社より購入したＴｉｔａｎｉｕｍ（ＩＶ）ｉｓｏｐｒｏｐｏｘｉｄｅ９７％をクロロベンゼンの重量に対してそれぞれ０．５重量％、１．０重量％となるように添加し、発電層を作製するための塗布溶液を作製した。活性層中に含まれる高分子化合物の吸収端波長は５７４ｎｍであった。次いで塗布溶液中にスターラーチップを投入し、６００ｒｐｍの回転数で攪拌混合を行った。攪拌混合は温度可変機能付きホットスターラー上で行い、設定温度を８０℃とした。その後、ガラス基板上に塗布溶液をスピンコートした後、乾燥を行い、発電層を形成した。発電層の膜厚は１３０ｎｍであった。膜厚の測定にはアルバック社製ＤｅｋｔａｋＸＴ−Ｅを用いた。
続いてＨｅｒａｅｕｓ社より購入したＣＬＥＶＩＯＳＳＶ３をバーコーターにより塗布し、乾燥させることにより電極を形成した。次いで、エポキシ樹脂（急速硬化型アラルダイト）を封止材として用いてガラス基板を接着することで封止処理を施し、電子素子を得た。電子素子の発電面積は5mm×20mmであった。この電子素子にソーラシミュレーター（三永電機製作所、商品名：XES-40S1、放射照度１００ｍＷ／ｃｍ2）を用いて一定の光を照射し、発生する電圧を測定した。発電した２２０ｍＶであった。
以上から本発明の効果が明らかである。
<Comparative Example 3>
A glass substrate on which ITO having a thickness of about 150 nm was patterned was washed with an organic solvent, an alkaline detergent, and ultrapure water and dried. Using UV UV cleaner UV253E manufactured by Filgen, the glass substrate was subjected to ultraviolet ozone (UV-O 3 ) treatment.
Next, Poly [2-methoxy-5- (3 ′, 7′-dimethylity) -1,4-phenylenevinylene] (MDMO-PPV) purchased from SIGMAS ALDRICH and Titanium (IV) isopropoxy 97 purchased from SIGMAS ALDRICH. % Was added so as to be 0.5% by weight and 1.0% by weight, respectively, with respect to the weight of chlorobenzene, to prepare a coating solution for preparing a power generation layer. The absorption edge wavelength of the polymer compound contained in the active layer was 574 nm. Next, a stirrer chip was put into the coating solution, and stirring and mixing were performed at a rotation speed of 600 rpm. The stirring and mixing was performed on a hot stirrer with a temperature variable function, and the set temperature was 80 ° C. Then, after spin-coating the coating solution on the glass substrate, it dried and formed the electric power generation layer. The thickness of the power generation layer was 130 nm. DektakXT-E manufactured by ULVAC, Inc. was used for the measurement of the film thickness.
Subsequently, CLEVIOSSV3 purchased from Heraeus was applied with a bar coater and dried to form an electrode. Next, an epoxy resin (rapid curing type Araldite) was used as a sealing material, and a glass substrate was adhered to perform a sealing process to obtain an electronic device. The power generation area of the electronic element was 5 mm × 20 mm. This electronic element was irradiated with a certain amount of light using a solar simulator (Minaga Electric Manufacturing Co., Ltd., trade name: XES-40S1, irradiance 100 mW / cm 2 ), and the generated voltage was measured. The generated power was 220 mV.
From the above, the effect of the present invention is clear.
Claims (17)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111640800A (en) * | 2020-04-30 | 2020-09-08 | 中国科学院微电子研究所 | Semiconductor device and preparation method thereof |
| JP2021082719A (en) * | 2019-11-20 | 2021-05-27 | 東洋インキＳｃホールディングス株式会社 | Thermoelectric conversion material and thermoelectric conversion element |
| JP2021086876A (en) * | 2019-11-26 | 2021-06-03 | 東洋インキＳｃホールディングス株式会社 | Thermoelectric conversion material and thermoelectric conversion element |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009158730A (en) * | 2007-12-27 | 2009-07-16 | Hitachi Ltd | Organic thin film solar cell and fabrication method of same |
| JP2011119701A (en) * | 2009-10-30 | 2011-06-16 | Sumitomo Chemical Co Ltd | Organic photoelectric conversion element |
| JP2012099592A (en) * | 2010-11-01 | 2012-05-24 | Konica Minolta Holdings Inc | Organic photoelectric conversion element, solar cell and method for manufacturing the same |
| JP2012182410A (en) * | 2011-03-03 | 2012-09-20 | Konica Minolta Holdings Inc | Organic photoelectric conversion element, method of manufacturing organic photoelectric conversion element, and solar cell |
| JP2012195575A (en) * | 2011-02-28 | 2012-10-11 | Sumitomo Chemical Co Ltd | Material of organic photoelectric conversion element and manufacturing method of organic photoelectric conversion element |
| US20130061931A1 (en) * | 2010-10-27 | 2013-03-14 | Korea Institute Of Machinery And Materials | Efficient organic solar cell using core/shell metal oxide nanoparticles, and method for manufacturing same |
| JP2013203881A (en) * | 2012-03-28 | 2013-10-07 | Toshiba Corp | Organic semiconductor and solar cell using the same |
-
2014
- 2014-08-15 JP JP2014165359A patent/JP2016042508A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009158730A (en) * | 2007-12-27 | 2009-07-16 | Hitachi Ltd | Organic thin film solar cell and fabrication method of same |
| JP2011119701A (en) * | 2009-10-30 | 2011-06-16 | Sumitomo Chemical Co Ltd | Organic photoelectric conversion element |
| US20130061931A1 (en) * | 2010-10-27 | 2013-03-14 | Korea Institute Of Machinery And Materials | Efficient organic solar cell using core/shell metal oxide nanoparticles, and method for manufacturing same |
| JP2012099592A (en) * | 2010-11-01 | 2012-05-24 | Konica Minolta Holdings Inc | Organic photoelectric conversion element, solar cell and method for manufacturing the same |
| JP2012195575A (en) * | 2011-02-28 | 2012-10-11 | Sumitomo Chemical Co Ltd | Material of organic photoelectric conversion element and manufacturing method of organic photoelectric conversion element |
| JP2012182410A (en) * | 2011-03-03 | 2012-09-20 | Konica Minolta Holdings Inc | Organic photoelectric conversion element, method of manufacturing organic photoelectric conversion element, and solar cell |
| JP2013203881A (en) * | 2012-03-28 | 2013-10-07 | Toshiba Corp | Organic semiconductor and solar cell using the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021082719A (en) * | 2019-11-20 | 2021-05-27 | 東洋インキＳｃホールディングス株式会社 | Thermoelectric conversion material and thermoelectric conversion element |
| JP7400384B2 (en) | 2019-11-20 | 2023-12-19 | 東洋インキＳｃホールディングス株式会社 | Thermoelectric conversion materials and thermoelectric conversion elements |
| JP2021086876A (en) * | 2019-11-26 | 2021-06-03 | 東洋インキＳｃホールディングス株式会社 | Thermoelectric conversion material and thermoelectric conversion element |
| JP7400396B2 (en) | 2019-11-26 | 2023-12-19 | 東洋インキＳｃホールディングス株式会社 | Thermoelectric conversion materials and thermoelectric conversion elements |
| CN111640800A (en) * | 2020-04-30 | 2020-09-08 | 中国科学院微电子研究所 | Semiconductor device and preparation method thereof |
| CN111640800B (en) * | 2020-04-30 | 2023-04-11 | 中国科学院微电子研究所 | Semiconductor device and preparation method thereof |
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