JP2016034092A - Electronic device manufacturing method and electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic device manufacturing method capable of simply forming a castellation having a favorable shape.SOLUTION: A manufacturing method of a crystal oscillator 1 comprises: a through hole formation step of forming a plurality of through holes 21h arranged in a y direction; a singulation step of singulating a mother board 21 in which the plurality of through holes 21h are formed into a plurality of insulating substrates 11 and separating the mother board 21 at this time along the arrangement of the plurality of through holes 21h to form castellations 11d on outer peripheral surfaces of the plurality of insulating substrates 11 by the divided plurality of through holes 21h. The singulation step includes a first separation step of separating the mother board 21 so as to link the plurality of through holes 21h at positions away from centers O1 of the plurality of through holes 21h in the one arrangement in the y direction on a positive side in an x direction; and a second separation step of separating the mother board 21 so as to link the plurality of through holes 21h at positions away from the centers O1 on a negative side in the x direction.SELECTED DRAWING: Figure 3

Description

  The present invention relates to an electronic device manufacturing method and an electronic device.

  There is known an electronic device in which castellations (recesses in a plan view of a substrate) are formed on the outer peripheral surface of a substrate (wiring substrate) (for example, Patent Documents 1 and 2). A conductor (a castellation conductor) is formed on the inner surface of the castellation. The castellation conductor is used, for example, to connect a conductor pattern on the front and back of the board, or connected to an external terminal disposed on the back surface of the board, and used for assisting bonding of bumps (solder, etc.) to the external terminal. ing.

  As a method for forming such a castellation, there is known a method of providing a plurality of through holes on a line to be diced in a mother substrate on which a large number of substrates are taken (for example, Patent Document 2). In this method, when the mother substrate is diced and separated into a plurality of substrates, the through holes are divided accordingly, and an arc-shaped castellation is obtained in plan view.

JP 2011-199577 A JP 2007-234657 A

  The shape of the castellation affects the characteristics or reliability of the electronic device. For example, in the plan view of the substrate, if the angle of the corner where the side surface on which the castellation is provided (for example, one side of the rectangular substrate) and the inner surface of the castellation intersect is an acute angle, the solder is removed from the castellation. It cannot wrap around the corner and adhere to the side surface of the substrate. As a result, the bonding strength may be reduced.

  However, various inconveniences arise when trying to solve the above-mentioned problems by making the shape of the through holes appropriate. For example, it becomes difficult to use some drilling means such as a drill. In addition, for example, it is necessary to form the through hole in consideration of the relative relationship between the direction of the shape of the through hole and the direction of the substrate (conductor pattern), which may complicate the manufacturing design.

  Therefore, it is desired to provide an electronic device manufacturing method and a wiring board manufacturing method capable of easily forming a castellation having a suitable shape, and an electronic device and a wiring board having a castellation having a suitable shape.

  A method for manufacturing an electronic device according to an aspect of the present invention includes a through-hole forming step of forming a plurality of through-holes penetrating a mother substrate in a thickness direction and arranged in a predetermined direction along a main surface of the mother substrate; The mother board on which the plurality of through holes are formed is divided into a plurality of insulating boards, and the mother board is separated along an array of the plurality of through holes, and the plurality of divided through holes are divided. A singulation step for forming castellations on the outer peripheral surfaces of the plurality of insulating substrates, and the singulation step is arranged on one side of the array with respect to the center of the plurality of through holes. A first separation step of separating the mother substrate so as to connect the plurality of through-holes at a position displaced from each other, and a position shifted to the other side of the array with respect to the center of the plurality of through-holes. The mother substrate is separated so as to connect the plurality of through holes. Or includes a second separation step of partially removing the.

  Preferably, in the first separation step, the mother substrate is separated into an insulating substrate located on the one side with respect to a separation surface and a discard margin located on the other side, and in the second separation step, The mother substrate is separated into an insulating substrate located on the other side with respect to the separation surface and the discard margin located on the one side.

  Preferably, in the first separation step and the second separation step, the mother substrate is cut by a dicing blade.

  An electronic device according to one embodiment of the present invention includes an insulating substrate in which a castellation is formed at a corner portion where the outer peripheral first side or the outer peripheral first side and the second side intersect in the plan view of the main surface. A distance between an imaginary line extending the first side and a center of an imaginary circle including an arc formed by the inner surface of the castellation in a plan view of the main surface of the insulating substrate is greater than 150 μm or It is larger than half of the thickness of the insulating substrate.

  According to the above procedure, it is possible to easily form a castellation having a suitable shape, and according to the above structure, the castellation shape is suitable.

The perspective view which shows the structure of the principal part of the electronic device which concerns on embodiment of this invention. The top view which shows the back surface of the electronic device of FIG. FIG. 3A to FIG. 3C are schematic views for explaining the main part of the method for manufacturing the electronic device of FIG. FIG. 4 is a partially enlarged view of FIG.

  FIG. 1 is a perspective view showing a configuration of a main part of a crystal oscillator 1 as an electronic device according to an embodiment of the present invention. Hereinafter, the crystal oscillator 1 may be described with reference to an orthogonal coordinate system xyz defined for the crystal oscillator 1 for convenience.

  The crystal oscillator 1 is, for example, roughly configured in a chip shape. The dimensions may be set as appropriate, but as an example, the long side length (x direction) is 1.5 mm to 7 mm, the short side length (y direction) is 1 mm to 5 mm, and the thickness (z direction). ) Is 0.5 mm to 2 mm.

  The crystal oscillator 1 is configured as an electronic component mounted on a mounting substrate such as a circuit board. For example, the crystal oscillator 1 is bonded to the mounting substrate by a bump (not shown) disposed between the crystal oscillator 1 and the mounting substrate, with the z-direction negative surface facing the mounting substrate (not shown). It is fixed and electrically connected to the mounting substrate. The bump is made of, for example, solder or a conductive adhesive.

  The crystal oscillator 1 includes, for example, a device substrate 3 and a vibrator unit 5 and an IC 7 provided on the device substrate 3. In addition, the crystal oscillator 1 may have an appropriate electronic element and / or member. For example, the crystal oscillator 1 may have a resin part that covers the IC 7 and the vibrator part 5.

  The vibrator unit 5 includes, for example, a vibration element (not shown) mounted on the device substrate 3 and a cover 9 that seals the vibration element. Although not particularly illustrated, the vibration element includes, for example, a plate-shaped crystal piece and a pair of excitation electrodes provided on both main surfaces of the crystal piece.

  For example, the IC 7 is mounted on the device substrate 3 via bumps (not shown), and is electrically connected to the vibration element via the device substrate 3. Further, the IC 7 includes, for example, an oscillation circuit that generates a constant frequency oscillation signal by applying a voltage to the vibration element.

  FIG. 2 is a plan view showing the negative side surface of the crystal oscillator 1 in the z direction.

  As shown in FIGS. 1 and 2, the device substrate 3 includes an insulating substrate 11 and various conductors provided on the insulating substrate 11.

  The insulating substrate 11 has, for example, a substantially rectangular plate shape, and is a first main surface 11a (FIG. 1) on which the vibrator unit 5 and the IC 7 are mounted, and a back surface thereof, which faces a mounting substrate (not shown). It has the 2nd main surface 11b and the outer peripheral surface 11c located in the periphery of these main surfaces. Moreover, the thickness of the insulating substrate 11 corresponds to the thickness of the device substrate 3 and is, for example, 100 to 300 μm.

  A castellation 11d is formed at an appropriate position on the outer peripheral surface 11c. For example, the castellation 11 d is located at a rectangular corner (four corners) of the device substrate 3. The castellation 11d is a recess (notch) in plan view, and is formed, for example, from the first main surface 11a to the second main surface 11b. The shape of the castellation 11d in plan view is, for example, constant (same) from the first main surface 11a to the second main surface 11b. Further, the shapes of the four castellations 11d are the same as each other, for example.

  As shown in FIG. 2, the inner surface of the castellation 11d is formed to be, for example, an arc that is a part of the virtual circle C1 in a plan view. The virtual circle C1 is a circle (true circle; the same applies hereinafter) and is not an ellipse or an ellipse.

  One of the features of this embodiment is that the radius r1 of the virtual circle C1 is relatively large (the castellation 11d is smaller than the radius r1) compared to the size of the castellation 11d (for example, the length of the arc). It is said. Here, for example, the radius r1 of the virtual circle C1 is 350 to 650 μm.

  From another point of view, in the present embodiment, the distance s1 between the virtual line Ln extending one side of the rectangle of the device substrate 3 and the center O1 of the virtual circle C1 including the arc of the castellation 11d that cuts out the one side is One of the features is that it is relatively large. For example, the distance s1 is longer than 150 μm. For example, the distance s1 is longer than half the thickness of the device substrate 3. The distance s1 is, for example, 150 to 280 μm.

  In another aspect, the present embodiment is characterized in that the central angle θ1 with respect to the arc of the castellation 11d is relatively small.

  From another viewpoint, in the present embodiment, the intersection angle θ2 formed by one rectangular side of the device substrate 3 and the arc tangent of the castellation 11d that cuts out the one side is relatively large or obtuse. This is one of the characteristics.

  The material of the insulating substrate 11 may be appropriate as long as it has insulating properties. The insulating substrate 11 may be composed of a single material or a plurality of materials. Good. For example, the insulating substrate 11 is made of ceramic or resin, or made of a base material made of paper or fiber impregnated with resin. The insulating substrate 11 is preferably a glass epoxy substrate in which a glass fiber is impregnated with a resin.

  The various conductors provided on the insulating substrate 11 include, for example, a plurality of external terminals 13 (FIG. 2) provided on the second main surface 11b, a castellation conductor 15 (FIG. 1) provided on the castellation 11d, And a conductor pattern 17 (FIG. 1) provided on the first main surface 11a.

  The external terminal 13 is for mounting the crystal oscillator 1 on a mounting base (not shown). The external terminal 13 is made of, for example, a layered conductor superimposed on the second main surface 11b, and is disposed at four rectangular corners of the second main surface 11b. The planar shape of the external terminal 13 may be appropriately set. For example, the external terminal 13 has a substantially rectangular shape, and a part thereof is cut out by a castellation 11d. The external terminal 13 is joined to a pad of a mounting base (not shown) by a bump made of, for example, solder.

  The castellation conductor 15 is, for example, for electrically connecting the external terminal 13 and the conductor pattern 17. Further, for example, the castoration conductor 15 is bonded to the bump together with the external terminal 13 and contributes to the mounting of the crystal oscillator 1 on a mounting base (not shown). The castellation conductor 15 is made of, for example, a layered conductor superimposed on the inner surface of the castellation 11d, and is provided over the entire inner surface of the castellation 11d.

  The conductor pattern 17 is, for example, for connecting the castellation conductor 15 and the IC 7. The conductor pattern 17 is made of, for example, a layered conductor superimposed on the second main surface 11b, and is provided with a wiring 17a extending from the castellation conductor 15 and a pad (not shown) located at the tip of the wiring 17a and joined to the IC 7 by a bump. And have. Further, for example, the conductor pattern 17 is hidden by the IC 7 or the like (not shown), but is located at the pad joined to the IC 7 by the bump, the wiring extending from the pad to the vibrator unit 5, and the tip of the wiring, It has a vibration element (not shown) and a pad joined by a bump.

  The material of the external terminal 13, the caster conductor 15 and the conductor pattern 17 may be an appropriate conductive material (generally metal). Further, these conductors may be configured by overlapping a plurality of conductor layers. For example, these conductors are made of Cu, Al, Ti, Ag, Au, Ni, Cr, alloys thereof, or a laminate of any of these.

  FIG. 3A to FIG. 3C are schematic views for explaining a method for manufacturing the crystal oscillator 1.

  First, as shown in FIG. 3A, a base substrate 21 (wafer-shaped base material) from which a large number of insulating substrates 11 are taken is prepared. For example, the mother board 21 has a thickness of 100 to 300 μm.

  Next, as shown in FIG. 3B, which is a plan view of a part of the mother board 21, a plurality of through holes 21 h that penetrate the mother board 21 in the thickness direction (z direction) are formed. The through-hole 21h is for constituting the castellation 11d, and its shape and size are the same as the shape and size of the virtual circle C1 shown in FIG. The diameter of the through hole 21h is, for example, 700 to 1300 μm. The plurality of through holes 21h are arranged vertically and horizontally. That is, the plurality of through holes 21h are arranged along a straight line extending in the x direction and arranged along a straight line extending in the y direction. The formation of the plurality of through holes 21h may be performed by a known appropriate method, for example, using a drill.

  Next, as shown in FIG. 3C, the mother substrate 21 is separated (for example, cut) along the arrangement of the through holes 21h in the x direction and the y direction, thereby separating the mother substrate 21 into a plurality of insulating substrates. 11 is divided into pieces.

  More specifically, when separating the mother board 21 along one array of the through holes 21h in the y direction, first, the side of the array with respect to the center O1 of the plurality of through holes 21h included in this array The mother substrate 21 is separated so as to connect the plurality of through holes 21h included in this array (along the first straight line L1) at a position shifted to one side (positive side in the x direction). Next, the plurality of through-holes 21h included in this array are arranged at positions shifted to the other side (negative side in the x direction) of the side of the array with respect to the center O1 of the plurality of through-holes 21h included in this array. The mother substrate 21 is separated so as to be connected (along the second straight line L2). Although the arrangement in the y direction has been described, the separation along the first straight line L1 and the separation along the second straight line L2 are similarly performed for the arrangement in the x direction.

  Therefore, the mother substrate 21 is separated into a plurality of insulating substrates 11 and a discard margin 23 located therebetween. In addition, the through hole 21h is divided along with this separation, and forms an arcuate castellation 11d in plan view. The castellation 11d becomes smaller and the distance s1 (FIG. 2) between one side of the insulating substrate 11 and the center O1 becomes larger than when separated along a straight line passing through the center O1 of the through hole 21h. The central angle θ1 (FIG. 2) with respect to the arc of 11d becomes smaller and the crossing angle θ2 becomes larger.

  Note that the order of separation may be set as appropriate. For example, after the separation along the first straight line L1 and the second straight line L2 is performed on the arrangement in the y direction of one through hole 21h, the first straight line L1 and the second straight line in the second arrangement in the y direction are performed. Cutting along the straight line L2 may be performed, or separation along the first straight line L1 is performed on the plurality of arrays in the y direction, and then separation along the second straight line L2 is performed on the plurality of arrays in the y direction. You may go.

  The separation is performed by, for example, a full cut using a dicing blade 25. In addition, cutting using a laser may be performed, or separation by a half cut using a dicing blade may be performed. When a dicing blade or a laser is used, the mother substrate 21 is removed with a certain width (for example, cutting with a dicing blade).

  FIG. 4 is an enlarged view of a part of FIG. As described above, when the base substrate 21 is cut by the dicing blade 25, a cutting allowance 27 (a hatched area in the drawing) having a width w1 substantially equal to the thickness of the dicing blade 25 is generated. As can be understood from the above description, the width w1 of the cutting allowance 27 is smaller than the diameter (r1 × 2) of the through hole 21h, and is further smaller than the radius r1 of the through hole 21h in this embodiment.

  The external terminal 13, the conductor pattern 17, the IC 7, and the vibrator unit 5 may be provided at an appropriate time. For example, the external terminal 13, the conductor pattern 17, the IC 7, and the vibrator portion 5 may be provided on the mother substrate 21 in the state of FIG. 3A before the through hole 21h is formed, or the through hole 21h is formed. Alternatively, it may be provided after the mother substrate 21 is separated. Moreover, these may be provided at different times.

  Similarly, the castellation conductor 15 may be provided at an appropriate time as long as it is after the through hole 21h is formed. For example, the castellation conductor 15 may be provided after the through hole 21h is formed and before the mother substrate 21 is separated into pieces, or may be provided after the mother substrate 21 is separated into pieces.

  In addition, the formation method of the external terminal 13, the castellation conductor 15, and the conductor pattern 17 may be the same as a known method, and the mounting method of the IC 7 and the vibrator unit 5 may be the same as the known method.

  As described above, the manufacturing method of the crystal oscillator 1 according to the present embodiment penetrates the mother substrate 21 in the thickness direction and has a plurality of penetrations arranged in a predetermined direction (x direction or y direction) along the main surface of the mother substrate 21. The through-hole forming step (FIG. 3B) for forming the holes 21h and the mother substrate 21 formed with the plurality of through-holes 21h are separated into a plurality of insulating substrates 11, and at this time, the plurality of through-holes 21h A separation step (FIGS. 3C and 4) for separating the mother substrate 21 along the arrangement and forming castellations 11d on the outer peripheral surfaces of the plurality of insulating substrates 11 by the plurality of divided through holes 21h. ,have. The singulation step is performed at positions shifted to one side (for example, the positive side in the x direction) of the side of the array with respect to the center O1 of the plurality of through holes 21h (for example, in one array in the y direction). A first separation step of separating the mother substrate 21 along the first straight line L1 so as to connect the through holes 21h, and the other side of the array with respect to the center O1 of the plurality of through holes 21h (for example, the x direction) And a second separation step of separating the mother substrate 21 along the second straight line L2 so as to connect the plurality of through holes 21h at positions shifted to the negative side).

  Therefore, for example, as described with reference to FIGS. 3C and 4, in the method for manufacturing the crystal oscillator 1 of the present embodiment, the angle at which the side surface provided with the castellation and the inner surface of the castellation intersect. The angle of the portion is not an acute angle as in the conventional case where the mother substrate 21 is separated along a straight line connecting the centers O1 of the through holes 21h in each row, but an obtuse angle. That is, in the manufacturing method of the crystal oscillator 1 of the present embodiment, the crossing angle θ2 formed by one side of the insulating substrate 11 and the tangent line of the arc of the castellation 11d that cuts out the one side can be increased. That is, the shape of the castellation 11d can be substantially changed while forming the circular through hole 21h as in the conventional case.

  If the crossing angle θ2 can be increased, for example, bumps such as solder tend to come into close contact with the one side of the arc of the castellation 11d and one side of the insulating substrate 11 around the crossing portion. As a result, the bonding strength of the bump to the crystal oscillator 1 is improved. Further, for example, when the mother substrate 21 is cut by the dicing blade 25, it is possible to suppress the occurrence of burrs when the dicing blade 25 reaches the through hole 21h.

  As in the prior art, when the mother substrate 21 is cut along a straight line connecting the centers O1 of the through holes 21h, the mother substrate 21 is cut by a dicing blade having a blade thickness corresponding to the width w2 in FIG. For example, the castellation 11d having the same shape and size as the present embodiment can be formed, and the shape of the castellation 11d can be substantially changed while forming the circular through hole 21h as in the conventional case. .

  However, in general, it is preferable to reduce the cutting allowance from the viewpoint of saving materials, and the blade thickness of the dicing blade is also reduced. In general, the thickness of the dicing blade is 100 μm or less, and is about 300 μm. Therefore, it can be considered that there is no electronic device having a castellation 11d in which the distance s1 (half of the width w2) exceeds 150 μm (300 μm / 2).

  The blade thickness of the dicing blade is set to be equal to or less than the thickness of the mother substrate 21 so that the mother substrate 21 is not broken during dicing, for example. Therefore, conventionally, it can be considered that there is no electronic device having a castellation 11d in which the distance s1 exceeds half the thickness of the insulating substrate 11 (mother substrate 21).

  Accordingly, the crystal oscillator 1 manufactured by the manufacturing method according to the present embodiment, which is particularly characteristic, has casters at corners where the first side and the second side of the outer periphery intersect in plan view of the main surface. An imaginary circle C1 including an imaginary line Ln extending the first side and an arc formed by the inner surface of the castellation 11d in a plan view of the main surface of the insulating substrate 11. The distance s1 from the center O1 is greater than 150 μm or greater than half the thickness of the insulating substrate 11. Here, the distance s1 is 150 to 280 m, for example. By doing so, it is possible to substantially change the shape of the castellation 11d while forming the circular through hole 21h as in the prior art.

  In the manufacturing method of the crystal oscillator 1 according to the present embodiment, in the first separation step (for example, cutting along the first straight line L1), the mother substrate 21 is on one side (for example, the x direction) with respect to the separation surface (cut surface). In the second separation step (for example, cutting along the second straight line L2), the substrate is separated into the insulating substrate 11 located on the positive side) and the discard margin 23 located on the other side (eg, the negative side in the x direction). 21 is separated into the insulating substrate 11 located on the other side with respect to the separation surface and the discard margin 23 located on the one side.

  Therefore, the shape of the castellation 11d can be set by appropriately changing the width of the discarding margin 23 without changing the thickness of the dicing blade 25 (the width w1 of the cutting margin 27). As a modified example of the manufacturing method of the present embodiment, for example, the mother substrate 21 is formed so as not to generate the disposal allowance 23 by using a dicing blade 25 whose blade thickness is smaller than the width w2 and half or more of w2. A method of dividing the insulating substrate 11 into individual pieces is conceivable. Compared with such a modified example, in the present embodiment in which the discard margin 23 is generated, the blade thickness of the dicing blade 25 can be reduced, and the surface of the dicing blade 25 that cuts the mother substrate 21 (the outer peripheral surface of the disk). However, there is no inconvenience that only a part in the width direction (axial direction) is used for cutting the mother substrate 21 and is worn.

  As can be understood from the description of the above-described modification, the second separation step along the second straight line L2 performed after the first separation step performed along the first straight line L1 is performed on the second straight line L2. Instead of separating the mother substrate 21 into the insulating substrate 11 and the disposal allowance 23, the cut surface of the mother substrate 21 in the first separation step may be shaved (partially removed).

  The present invention is not limited to the embodiments and modifications described above, and may be implemented in various aspects.

  For example, the electronic device is not limited to a piezoelectric device such as a crystal oscillator, and may be, for example, a resistance element, an inductor, a capacitor, or a semiconductor device (for example, an IC or LED). The piezoelectric device is not limited to an oscillator, and may be, for example, a piezoelectric vibrator or a SAW (Surface Acoustic Wave) device. The piezoelectric body of the piezoelectric vibrator or the piezoelectric oscillator is not limited to quartz, and may be ceramic, for example. Further, the structure of the piezoelectric oscillator is limited to a structure in which a vibration element and an IC are mounted on one main surface of a single layer substrate (a substrate in which a conductor layer is formed only on both surfaces of the substrate) as illustrated in FIG. Alternatively, the vibration element may be mounted on one main surface of the substrate and the IC may be mounted on the other main surface. Moreover, an electronic device may have a thermostat which accommodates an insulating substrate (device substrate).

  As described above, the electronic device may be various devices, and the insulating substrate on which the castellation is formed may be appropriate other than those exemplified in the description of the embodiments. For example, in a semiconductor device, the insulating substrate may be a semiconductor substrate made of silicon. In the SAW device, the insulating substrate may be a piezoelectric substrate made of a single crystal.

  The shape of the through hole serving as the castellation may not be circular. For example, the shape of the through hole may be an ellipse or a rectangle. In any shape, the degree of freedom of the shape and / or size of the through hole is improved by performing the separation step twice for each through hole.

  The castellation may be provided not in the four corners (corner portions) of the insulating substrate but in the middle of the side surface (side in plan view). For example, in the insulating substrate 11 of FIG. 1, two castellations may be provided in the middle of each long side (side extending in the x direction) (center side of the side rather than the corner). In this case, the separation step is performed so as to connect a plurality of through holes arranged in the x direction, but the separation along the straight line extending in the y direction is performed so as to avoid the plurality of through holes. That is, one through hole does not constitute four castellations as in the embodiment, but constitutes two castellations.

  Even in the case where castellations are provided in the middle of the side, the plurality of through holes are connected twice so as to connect the plurality of through holes at positions shifted to one side and the other side of the array with respect to the centers of the plurality of through holes. By performing the separation step, the crossing angle between the rectangular side of the insulating substrate 11 and the arc of the castellation is increased or the rectangular side of the insulating substrate 11 is compared with the conventional substantially semicircular castellation. The distance between the extended virtual line and the center of the virtual circle including the arc of the castellation can be increased.

  The number of castellations provided on one insulating substrate 11 is not limited to four, and may be one or two, for example, or five or more. When a plurality of castellations are provided on one insulating substrate 11, the shapes and / or sizes of the plurality of castellations may be the same or different from each other.

  The plurality of insulating substrates taken out from the mother substrate may have different configurations, or may have the same configuration and be arranged in different directions. In another aspect, the plurality of through holes may be arranged in parallel to one of the x direction and the y direction, but may not be arranged in parallel to the other of the x direction and the y direction. For example, in the case where a plurality of rows of through holes arranged in the x direction are provided with different positions in the y direction, the positions in the x direction of the plurality of through holes are between each other. May be different. Even in this case, the present invention in which the separation step is performed twice when separating the mother substrate so as to connect a plurality of through holes arranged in the x direction can be applied.

  As will be understood from the description that castellations may be provided in the middle of the side of the insulating substrate and the description that a plurality of through holes may be arranged only in one of the x and y directions. The separation step of separating the mother substrate so as to connect the plurality of through holes may be performed only in one of the x direction and the y direction, and may be performed while avoiding the plurality of through holes. Further, when the mother board is separated so as to connect a plurality of through holes in both the x direction and the y direction, only twice in a position shifted from the center of the through hole in only one of the x direction and the y direction. The separation step may be performed, and one separation step may be performed at the position passing through the center of the through hole for the other of the x direction and the y direction.

  Explanation that the configurations of the plurality of insulating substrates taken out from the mother substrate may be different from each other, and description that the shapes and / or sizes of the plurality of castellations provided on one insulating substrate may be different from each other As will be understood from the above, the sizes and / or shapes of the plurality of through holes may be different from each other.

  In the electronic device, in the case where a plurality of stacked insulating substrates are provided, a part thereof may be regarded as the insulating substrate of the present invention, or the whole may be regarded as the insulating substrate of the present invention. For example, a range in which castellations are integrally formed among a plurality of insulating substrates may be regarded as the insulating substrate of the present invention. In addition, for example, when it is determined whether or not the electronic device corresponds to a preferred embodiment of the present invention based on whether or not the distance s1 is larger than half of the thickness of the insulating substrate, the through hole is connected. It may be determined that the range in which both are separated (cut) corresponds to the insulating substrate of the present invention.

  In the embodiment, the castellation conductor 15 has both an effect of connecting the external terminal 13 and the conductor pattern 17 and an effect of strengthening the bonding of the bumps. However, the castellation conductor may be provided so as to perform only one of the two actions. For example, the conductor pattern and the external terminal may be connected by a through conductor penetrating the insulating substrate, and the castellation conductor may not be connected to the conductor pattern. Further, for example, the bump may be arranged so as not to contact the castellation conductor.

  DESCRIPTION OF SYMBOLS 1 ... Crystal oscillator (electronic device), 11 ... Insulating substrate, 11d ... Castellation, 21 ... Mother board, 21h ... Through-hole, O1 ... Center.

Claims (4)

A through-hole forming step of forming a plurality of through-holes penetrating the mother board in the thickness direction and arranged in a predetermined direction along the main surface of the mother board;
The mother board on which the plurality of through holes are formed is divided into a plurality of insulating boards, and the mother board is separated along an array of the plurality of through holes, and the plurality of divided through holes are divided. A singulation step for forming castellations on the outer peripheral surfaces of the plurality of insulating substrates,
Have
The singulation step includes
A first separation step of separating the mother substrate so as to connect the plurality of through holes at a position shifted to one side of the side of the array with respect to the center of the plurality of through holes;
A second separation step of separating or partially removing the mother substrate so as to connect the plurality of through holes at positions shifted to the other side of the side of the array with respect to the centers of the plurality of through holes; A method for manufacturing an electronic device. In the first separation step, the mother substrate is separated into an insulating substrate located on the one side with respect to a separation surface and a discard margin located on the other side,
2. The method of manufacturing an electronic device according to claim 1, wherein in the second separation step, the mother substrate is separated into an insulating substrate located on the other side with respect to a separation surface and the discard margin located on the one side. . The method for manufacturing an electronic device according to claim 1, wherein in the first separation step and the second separation step, the mother substrate is cut by a dicing blade. In a plan view of the main surface, it has an insulating substrate in which castellations are formed at the corners where the outer periphery first side or the outer periphery first side and the second side intersect,
In a plan view of the main surface of the insulating substrate, a distance between an imaginary line extending the first side and a center of an imaginary circle including an arc formed by the inner surface of the castellation is greater than 150 μm or of the insulating substrate An electronic device greater than half the thickness.

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