JP2016029727A - Method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simplify the manufacturing of a transistor, by reducing the number of manufacturing steps of a transistor.SOLUTION: A semiconductor device is constituted to have an electrode 101 provided on a formation surface, and becoming a gate electrode, an insulating layer 102 becoming a gate insulating layer on the electrode 101, electrodes 103a and 103b provided selectively on the insulating layer 102 and becoming a source electrode or a drain electrode, and a semiconductor layer 104 covering the top face of the insulating layer 102, the top face and side face of the electrode 103a, and the top face and side face of the electrode 103b.SELECTED DRAWING: Figure 1

Description

The present invention relates to a semiconductor device and a manufacturing method thereof. Further, the present invention relates to a display device and a manufacturing method thereof.

Various metal oxides exist and are used in various applications. Indium oxide is a well-known material and is used as an electrode material having translucency required for a liquid crystal display or the like.

Some metal oxides exhibit semiconductor properties. A metal oxide exhibiting semiconductor characteristics is a kind of compound semiconductor. A compound semiconductor is a semiconductor formed by bonding two or more atoms by ionic bonds. Generally, a metal oxide becomes an insulator. However, it is known that depending on the combination of elements constituting the metal oxide, it becomes a semiconductor.

For example, among metal oxides, tungsten oxide, tin oxide, indium oxide, zinc oxide, and the like are known to exhibit semiconductor characteristics. A thin film transistor using a transparent semiconductor layer formed of such a metal oxide as a channel formation region is disclosed (Patent Documents 1 to 4, Non-Patent Document 1).

However, not only single-component oxides but also multi-component oxides are known as metal oxides. For example, InGaO ₃ (ZnO) _m (m: natural number) having a homologous phase is a known material (Non-Patent Documents 2 to 4).

A thin film transistor (also referred to as a TFT) is formed using the above In—Ga—Zn-based oxide.
It has been confirmed that it can be applied as a channel formation layer (Patent Document 5, Non-Patent Documents 5 and 6).

A TFT using an oxide semiconductor as a channel formation layer is a TFT using amorphous silicon.
A field effect mobility higher than that of FT is obtained.

A TFT using such an oxide semiconductor is formed on a glass substrate, a plastic substrate, etc.
Liquid crystal display, electroluminescence display (also called EL display)
Application to display devices such as electronic paper is also expected.

JP 60-198861 A JP-A-8-264794 Japanese National Patent Publication No. 11-505377 JP 2000-150900 A JP 2004-103957 A

M.M. W. Princes, K.M. O. Grosse-Holz, G.G. Muller, J.M. F. M.M. Cillessen, J.M. B. Giesbers, R.A. P. Weening, and R.M. M.M. Wolf, “A Ferroelectric Transient Thin-Film Transistor”, Appl. Phys. Lett. 17 June 1996, Vol. 68 p. 3650 M.M. Nakamura, N .; Kimizuka, and T.K. Mohri, “The Phase Relations in the In2O3-Ga2ZnO4-ZnO System at 1350 ° C.”, J. Mohr. Solid State Chem. 1991, Vol. 93, p. 298 N. Kimizuka, M .; Isobe, and M.M. Nakamura, “Syntheses and Single-Crystal Data of Homologous Compounds, In 2 O 3 (ZnO) m (m = 3,4, and 5), InGaO 3 (ZnO) 3, and Ga 2 O 3 (ZnO) 9 (m = 7, 8 and 16) in the In2O3-ZnGa2O4-ZnO System ", J. et al. Solid State Chem. 1995, Vol. 116, p. 170 Masaki Nakamura, Noboru Kimizuka, Naohiko Mouri, Mitsumasa Isobe, “Synthesis and Crystal Structure of Homologous Phase, InFeO 3 (ZnO) m (m: Natural Number) and Its Isomorphic Compounds”, Solid Physics, 1993, Vol. 28, no. 5, p. 317 K. Nomura, H .; Ohta, K .; Ueda, T .; Kamiya, M .; Hirano, and H.H. Hoson, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor”, SCIENCE, 2003, Vol. 300, p. 1269 K. Nomura, H .; Ohta, A .; Takagi, T .; Kamiya, M .; Hirano, and H.H. Hoson, “Room-temperament fabrication of transparent flexible thin-film transducers using amorphous semiconductors,” NATURE, 2004, Vol. 432 p. 488

In conventional TFT fabrication, for example, a semiconductor film is processed after film formation to form a channel formation layer,
In addition, a gate electrode, a source electrode, and a drain electrode are formed by processing the conductive film after deposition. For example, an island of a semiconductor layer used as a channel formation layer or the like is formed by processing a semiconductor film into a predetermined shape. Note that the process of forming the island of the semiconductor layer is also referred to as a semiconductor layer island formation process. For example, in the case of manufacturing a plurality of semiconductor elements including a transistor, a semiconductor film is processed to separate the semiconductor film into a plurality of islands, thereby forming islands of the plurality of semiconductor layers. A semiconductor element is manufactured using these. Examples of a processing method of a film to be processed such as a semiconductor film include a processing method by etching using a photolithography technique. In order to simplify the fabrication of the TFT, it is desirable to reduce the number of processing steps as much as possible.

Therefore, an object of one embodiment of the present invention is to reduce the number of manufacturing steps of a transistor and simplify the manufacturing of the transistor.

One embodiment of the present invention includes a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and a semiconductor layer functioning as a channel formation layer. In addition, the light-transmitting semiconductor film is not processed into an island of the semiconductor layer after film formation, and the upper surface of the gate insulating layer between the source electrode and the drain electrode,
The semiconductor device has a structure that covers the top and side surfaces of the source electrode and the top and side surfaces of the drain electrode.

Since the semiconductor film has a light-transmitting property, when used for a channel formation layer of a transistor, the semiconductor layer is not formed by processing, and the upper surface of the gate insulating layer between the source electrode and the drain electrode is formed. A structure in which the upper surface and the side surface and the upper surface and the side surface of the drain electrode are covered with the semiconductor film can be obtained.

One embodiment of the present invention includes a gate electrode, a gate insulating layer over the gate electrode, a source electrode and a drain electrode which are selectively provided over the gate insulating layer, a light-transmitting source electrode, A semiconductor device having an upper surface of a gate insulating layer between drain electrodes, an upper surface and side surfaces of a source electrode, and one semiconductor layer covering the upper surface and side surfaces of the drain electrode.

Another embodiment of the present invention includes a first semiconductor element which is a transistor, and a second semiconductor element. The first semiconductor element includes a gate electrode, a gate insulating layer over the gate electrode, A source electrode and a drain electrode which are selectively provided over the gate insulating layer; and a light-transmitting upper surface of the gate insulating layer between the source electrode and the drain electrode, an upper surface and a side surface of the source electrode, and an upper surface of the drain electrode And a single semiconductor layer that covers the side surface and extends to the second semiconductor element.

In one embodiment of the present invention, a first transistor including a gate electrode, a source electrode, and a drain electrode, a capacitor including the first electrode and the second electrode, a gate electrode, a source electrode, and a drain electrode And a light-emitting element having an anode electrode and a cathode electrode. The pixel includes a first conductive layer, a part of which serves as a gate electrode of the first transistor, and a part of the pixel. Is selected on the insulating layer, the first conductive layer serving as the first electrode of the capacitor and the second conductive layer serving as the gate electrode of the second transistor, the insulating layer covering the top surfaces of the first conductive layer and the second conductive layer, And a third conductive layer, part of which is one of a source electrode and a drain electrode of the first transistor, and a portion selectively provided over the insulating layer, and a part of the source electrode of the first transistor and Drain electrode A fourth conductive layer to be the person, selectively formed on the insulating layer,
Part of the second electrode of the capacitor and the fifth conductive layer serving as one of the source electrode and the drain electrode of the second transistor are provided over the insulating layer, and part of the source electrode of the second transistor and A sixth conductive layer which is the other of the drain electrodes; a light-transmitting third conductive layer;
One semiconductor layer covering the upper surface of the insulating layer between the conductive layers, the upper surface of the insulating layer between the fifth conductive layer and the sixth conductive layer, and the upper surface and side surfaces of the third to sixth conductive layers; The second layer is provided via an interlayer film provided on the semiconductor layer, a first opening provided on the interlayer film and provided in the insulating layer, and a second opening provided in the semiconductor layer and the interlayer film. A seventh conductive layer electrically connected to the first conductive layer and electrically connected to the fourth conductive layer through a third opening provided in the semiconductor layer and the interlayer film; and on the interlayer film An eighth conductive layer that is electrically connected to the sixth conductive layer through a fourth opening provided in the semiconductor layer and the interlayer film, and part of which serves as an anode electrode of the light-emitting element; A barrier layer covering the seventh conductive layer, the eighth conductive layer, and the interlayer film; and an anode through a fifth opening provided in the barrier layer. And the electroluminescent layer which is electrically connected to the cathode electrode is electrically connected to the electroluminescent layer, which is a display device in which a part having a ninth conductive layer serving as a cathode electrode of the light emitting element.

Note that the display device may be a bottom emission type or a dual emission type.

Another embodiment of the present invention is a transistor including a gate electrode, a source electrode, and a drain electrode, a capacitor including a first electrode and a second electrode, and a liquid crystal including a first electrode and a second electrode. And a first conductive layer, part of which is a gate electrode of the transistor, a second conductive layer, part of which is the first electrode of the capacitor, An insulating layer that covers the upper surfaces of the first conductive layer and the second conductive layer; a third conductive layer that is selectively provided on the insulating layer and that partially serves as one of a source electrode and a drain electrode of the transistor; and an insulating layer A fourth conductive layer which is selectively provided over and partly serves as the other of the source electrode and the drain electrode of the transistor and the second electrode of the capacitor; and a light-transmitting third conductive layer And the upper surface of the insulating layer between the fourth conductive layers, the upper surface of the third conductive layer, and One semiconductor layer covering the side surface and the upper surface and side surface of the fourth conductive layer, an interlayer film provided on the semiconductor layer, an opening provided in the semiconductor film and the interlayer film, And a fifth conductive layer that is electrically connected to the fourth conductive layer and serves as the first electrode of the liquid crystal element.

Note that the semiconductor layer is an oxide semiconductor layer represented by InMO ₃ (ZnO) _m (m> 0), and M is gallium (Ga), iron (Fe), nickel (Ni), manganese (Mn). And a single metal element or a plurality of metal elements selected from cobalt (Co).

In one embodiment of the present invention, a gate electrode is formed, a gate insulating layer is formed over the gate electrode,
A source electrode and a drain electrode are selectively formed over the gate insulating layer, and the upper surface of the gate insulating layer between the source electrode and the drain electrode, the upper surface and the side surface of the source electrode, and the upper surface and the side surface of the drain electrode are covered. This is a method for manufacturing a semiconductor device in which one semiconductor layer is formed by forming a semiconductor film having optical properties.

According to one embodiment of the present invention, the first conductive layer and the second conductive layer are selectively formed over the substrate, and the insulating layer is formed to cover the top surfaces of the first conductive layer and the second conductive layer. Forming a first opening in the insulating layer, and selectively forming a third conductive layer to a sixth conductive layer on the insulating layer, respectively, between the third conductive layer and the fourth conductive layer. A light-transmitting semiconductor film is provided so as to cover the upper surface of the insulating layer, the upper surfaces of the insulating layers between the fifth conductive layer and the sixth conductive layer, and the upper surfaces and side surfaces of the third to sixth conductive layers. One semiconductor layer is formed by forming, an interlayer film is formed on the semiconductor layer,
A second opening to a fourth opening are formed in the semiconductor layer and the interlayer film, and the third opening is electrically connected to the fourth conductive layer through the second opening and provided in the insulating layer. A seventh conductive layer is formed on the interlayer film so as to be electrically connected to the second conductive layer through the opening of the semiconductor layer and the fourth opening provided in the semiconductor layer and the interlayer film, An eighth conductive layer formed on the interlayer film so as to be electrically connected to the sixth conductive layer through a fourth opening provided in the semiconductor layer and the interlayer film; and a seventh conductive layer A partition layer is formed so as to cover the eighth conductive layer and the interlayer film, a fifth opening is formed in the partition layer, and is electrically connected to the anode electrode through the fifth opening. And forming a ninth conductive layer so as to be electrically connected to the electroluminescent layer.

In one embodiment of the present invention, the first conductive layer and the second conductive layer are selectively formed over the first substrate so as to cover the top surfaces of the first conductive layer and the second conductive layer. An insulating layer is formed, and a third layer is formed on the insulating layer.
The conductive layer and the fourth conductive layer are selectively formed, respectively, and the upper surface of the insulating layer between the third conductive layer and the fourth conductive layer, the upper surface and the side surface of the third conductive layer, and the fourth conductive layer One semiconductor layer is formed by forming a light-transmitting semiconductor film so as to cover the entire upper surface and side surfaces of the substrate, an interlayer film is formed over the semiconductor layer, and openings are formed in the semiconductor layer and the interlayer film. And a second substrate on which an eighth conductive layer is provided by forming a seventh conductive layer on the interlayer film so as to be electrically connected to the fourth conductive layer through the opening. And a first substrate are bonded to each other through a liquid crystal layer.

Note that in this specification, when the opening is formed, part of the semiconductor layer may be processed, but the processing is not included in the island formation step of the semiconductor layer.

Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and for example, a transistor, an electro-optical device, a semiconductor circuit, and an electronic device are all included in the semiconductor device.

After the semiconductor film is formed, it is not necessary to process the semiconductor film into an island of the semiconductor layer, so that the number of manufacturing steps of the transistor can be reduced and the manufacturing of the transistor can be simplified. In addition, the manufacturing cost for the semiconductor layer island formation step can be reduced.

4 is a cross-sectional view illustrating a structure example of a semiconductor device in Embodiment 1. FIG. 2A is a cross-sectional view illustrating a manufacturing example of the semiconductor device illustrated in FIG. FIG. 6 is a cross-sectional view illustrating a structural example of a semiconductor device in a second embodiment. 6A and 6B illustrate a structural example and a manufacturing method example of a display device in Embodiment 3. 6A and 6B illustrate a structural example and a manufacturing method example of a display device in Embodiment 3. 6A and 6B illustrate a structural example and a manufacturing method example of a display device in Embodiment 3. 6A and 6B illustrate a structural example and a manufacturing method example of a display device in Embodiment 3. 6A and 6B illustrate a structural example and a manufacturing method example of a display device in Embodiment 3. 6A and 6B illustrate a structural example and a manufacturing method example of a display device in Embodiment 3. 10 is a circuit diagram illustrating a circuit configuration example of a pixel in a display device according to Embodiment 3. FIG. FIG. 10 is a diagram illustrating an example of a pixel structure in a display device in Embodiment 4; FIG. 10 is a diagram illustrating an example of a pixel structure in a display device in Embodiment 4; 10 is a cross-sectional view illustrating a structural example of a pixel in a display device in Embodiment 4. FIG. FIG. 10 is a circuit diagram illustrating a circuit configuration example of a pixel in a display device in a fourth embodiment. FIG. 10 is a block diagram illustrating a configuration example of a display device in a fifth embodiment. FIG. 10 is a block diagram illustrating a configuration example of a drive circuit in a display device in a fifth embodiment. FIG. 10 illustrates a structure example of a light-emitting panel according to Embodiment 5. FIG. 10 is a diagram illustrating a structure example of a liquid crystal panel according to a fifth embodiment. FIG. 10 is a cross-sectional view illustrating a structural example of a liquid crystal display module according to a fifth embodiment. 10 is a cross-sectional view illustrating an example of a structure of electronic paper in Embodiment 6. FIG. 20 is a diagram illustrating a configuration of an electronic book in Embodiment 6. FIG. 20 is a diagram illustrating a configuration of an electronic device in Embodiment 7. FIG. 20 is a diagram illustrating a configuration of an electronic device in Embodiment 7. FIG. 20 is a diagram illustrating a configuration of an electronic device in Embodiment 7. FIG.

Examples of embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

(Embodiment 1)
In this embodiment, an example of a semiconductor device which is one embodiment of the present invention will be described.

A structure of the semiconductor device in this embodiment will be described with reference to FIGS. FIG. 1 is a cross-sectional view illustrating a structural example of a semiconductor device in this embodiment.

A semiconductor device illustrated in FIG. 1A includes an electrode 101, an insulating layer 102, electrodes 103 a and 103 b, and a semiconductor layer 104.

The electrode 101 is provided over a formation surface (the substrate 100 in FIG. 1A). The electrode 101 functions as a gate electrode.

The insulating layer 102 is provided over the electrode 101. The insulating layer 102 functions as a gate insulating layer.

The electrodes 103a and 103b are provided over part of the insulating layer 102, the electrode 103a functions as one of a source electrode and a drain electrode, and the electrode 103b functions as the other of the source electrode and the drain electrode. For example, when the electrode 103a functions as a source electrode, the electrode 103b functions as a drain electrode.

Note that in the semiconductor device illustrated in FIG. 1A, the electrode 103 a and the electrode 103 b include the insulating layer 1.
However, the present invention is not limited to this, and the semiconductor device in this embodiment includes the electrode 103 a and the electrode 103 b over the insulating layer 102 in a portion other than the electrode 101. You can also

The semiconductor layer 104 is one (continuous) layer having a light-transmitting property, and includes the electrode 103a and the electrode 1.
03b is provided so as to cover the upper surface of the insulating layer 102 between 03b, the upper surface and side surfaces of the electrode 103a, and the upper surface and side surfaces of the electrode 103b. The semiconductor layer 104 is a layer in which a channel is formed (also referred to as a channel formation layer).

Further, the semiconductor device of this embodiment can have a structure illustrated in FIG.

A semiconductor device illustrated in FIG. 1B includes an electrode 101, an insulating layer 102, an electrode 103a and an electrode 103b, a semiconductor layer 104, and a buffer layer 105a and a buffer layer 105b.

The semiconductor device illustrated in FIG. 1B has a structure in which a buffer layer is added to the structure of the semiconductor device illustrated in FIG. Therefore, the same portions as those of the semiconductor device illustrated in FIG.
The description of the semiconductor device shown in FIG. 1 is incorporated as appropriate, and different portions from the semiconductor device shown in FIG.

The buffer layer 105a is provided over the electrode 103a and the buffer layer 105b is provided over the electrode 102a. The buffer layer 105a and the buffer layer 105b are formed of the electrode 103a or the electrode 103
It functions as a layer that improves electrical connection between the semiconductor layer 104 and b. Note that in the semiconductor device illustrated in FIG. 3, the buffer layer 105 is formed on the entire upper surfaces of the electrodes 103 a and 103 b.
a or the buffer layer 105b is provided, but the present invention is not limited to this, and in the semiconductor device of this embodiment, the buffer layer 1 is selectively formed over part of the electrode 103a and the electrode 103b.
05a or a buffer layer 105b may be employed.

The buffer layer 105a and the buffer layer 105b can be formed using the same material and manufacturing method as the semiconductor layer 104, for example. In addition, the buffer layer 105a and the buffer layer 105
It is preferable that b has the same or higher conductivity than the semiconductor layer 104. The buffer layer 105a and the buffer layer 105b can be formed by forming a resist on the semiconductor layer 104 using, for example, a photolithography technique and etching the semiconductor film using the resist as a mask.

The semiconductor layer 104 includes an upper surface of the insulating layer 102 between the electrodes 103a and 103b, an upper surface and side surfaces of the electrode 103a, an upper surface and side surfaces of the electrode 103b, an upper surface and side surfaces of the buffer layer 105a, and an upper surface and side surfaces of the buffer layer 105b. It is provided so as to cover.

The semiconductor device illustrated in FIG. 1B has a so-called bottom contact structure in which a semiconductor layer serving as a channel formation layer is provided over the source electrode and the drain electrode. With the bottom contact structure, the contact area between the source and drain electrodes and the semiconductor layer can be increased.

The semiconductor device illustrated in FIGS. 1A and 1B has a so-called bottom gate structure in which a source electrode, a drain electrode, and a channel formation layer are provided over a gate electrode. With the bottom gate structure, the gate insulating layer and the semiconductor layer can be continuously formed. Note that the semiconductor device of this embodiment is not limited to the bottom gate structure, and may have a top gate structure.

As described as an example in FIG. 1, the semiconductor device of this embodiment uses a light-transmitting semiconductor film as a semiconductor layer functioning as a channel formation layer, and is a single semiconductor including a light-transmitting semiconductor film. The layer covers the upper surface of the gate insulating layer between the source electrode and the drain electrode, the upper surface and the side surface of the source electrode, and the upper surface and the side surface of the drain electrode. Since the semiconductor film has a light-transmitting property, the semiconductor film can be used as a channel formation layer of a transistor without forming an island of the semiconductor layer. Accordingly, the island formation step of the semiconductor layer can be eliminated, the number of manufacturing steps of the semiconductor device can be reduced, and the manufacturing of the semiconductor device can be simplified.

In addition, since the island of the semiconductor layer is not formed, the shape of the buffer layer is not limited when the buffer layer is provided as illustrated in FIG.

Further, as shown in FIG. 1, the source electrode and the drain electrode are prevented from being oxidized by having a structure in which the upper surface and the side surface of the source electrode and the entire upper surface and the side surface of the drain electrode are covered with a semiconductor layer. And the influence of the external environment on the drain electrode can be reduced.

Next, a method for manufacturing the semiconductor device of this embodiment will be described with reference to FIGS. 2 is shown in FIG.
10A to 10C are process diagrams illustrating an example of a method for manufacturing the semiconductor device illustrated in FIG.

First, as shown in FIG. 2A, an electrode 101 is formed on a surface to be formed (a substrate 100 in FIG. 2A) prepared in advance.

As the substrate 100, for example, a glass substrate, a quartz substrate, a ceramic substrate, a sapphire substrate, or the like can be used. In addition, as the glass substrate, for example, an alkali-free glass substrate can be used, and as the alkali-free glass substrate, for example, a substrate using barium borosilicate glass, aluminoborosilicate glass, aluminosilicate glass, or the like can be given. Alternatively, a plastic substrate can be used as the substrate 100 as long as it can withstand the temperature of each process performed when manufacturing the semiconductor device. Alternatively, a semiconductor substrate, a metal substrate, a stainless steel substrate, or the like can be used by performing an insulating treatment on the substrate surface.

As a material for the electrode 101, for example, a conductive material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, or scandium, or a conductive film containing an alloy material containing these as a main component can be used. . For example, the electrode 101 can be formed by forming the conductive film over the substrate 100, forming a resist using a photolithography technique, and etching and processing the conductive film using the resist as a mask. For forming the conductive film, for example, a sputtering method can be used.

Note that dry etching or wet etching can be used as the etching. As an etching apparatus used for dry etching, an etching apparatus using a reactive ion etching method (RIE method) or an ECR (Electron Cyclotro) is used.
n Resonance) and ICP (Inductively Coupled Pla)
A dry etching apparatus using a high-density plasma source such as sma) can be used.
In addition, as a dry etching apparatus in which uniform discharge can be easily obtained over a wide area compared with the ICP etching apparatus, the upper electrode is grounded, a 13.56 MHz high frequency power source is connected to the lower electrode, and the lower electrode is further connected to the lower electrode. ECCP (Enha) with a 3.2MHz low frequency power supply
There is an etching apparatus of a ncped capacitively coupled plasma) mode. This ECCP mode etching apparatus can cope with, for example, the case where a substrate of a size exceeding 3 m of the 10th generation is used as the substrate.

Alternatively, the electrode 101 can be formed using a stacked film in which conductive films including the above materials are stacked. For example, when the electrode 101 is formed using an aluminum film as one of the conductive films, the aluminum film alone has problems such as low heat resistance and easy corrosion. The formation of the electrode 101 is preferable because the heat resistance and corrosion resistance of the conductive film can be improved as compared with the case of using only the aluminum film. As a material of the heat-resistant conductive film, an element selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium, an alloy containing the above elements as a component, an alloy film combining the above elements, or the above-described elements A nitride containing an element as a component can be used.

As the conductive film having a stacked structure, for example, a conductive film in which a molybdenum film is stacked over an aluminum film,
A conductive film in which a molybdenum film is stacked over a copper film, a conductive film in which a titanium nitride film or a tantalum nitride film is stacked over the copper film, a conductive film in which a titanium nitride film and a molybdenum film are stacked, or the like can be used.

Next, as illustrated in FIG. 2B, an insulating layer 102 is formed so as to cover the electrode 101.

The insulating layer 102 is made of, for example, an oxide, nitride, oxynitride, or nitride oxide of any one of silicon, aluminum, yttrium, tantalum, and hafnium, or a compound containing at least two of these compounds. Layers can also be used.

Next, as illustrated in FIG. 2C, the electrode 103 a and the electrode 103 b are formed over part of the insulating layer 102.

The electrodes 103a and 103b can be formed, for example, by forming a conductive film over the insulating layer 102, forming a resist using a photolithography technique, and etching and processing the conductive film using the resist as a mask. it can.

As a material of the electrode 103a and the electrode 103b, for example, a conductive film containing a conductive material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, or scandium or an alloy material containing these as a main component is used. Can do. 2
In the case where heat treatment at 00 ° C. to 600 ° C. is performed, it is preferable to use a conductive film having heat resistance that can withstand the heat treatment. For example, the electrode 103a and the electrode 103b formed using a titanium film, an aluminum film, and a stacked film of a titanium film have low resistance and hillocks are hardly generated in the aluminum layer. In addition, for example, a sputtering method or a vacuum evaporation method can be used as the method for forming the conductive film described above. The electrodes 103a and 103b can be formed using a conductive nano paste such as silver, gold, or copper. The conductive paste can be formed by discharging and baking using, for example, a screen printing method or an inkjet method.

Next, as illustrated in FIG. 2D, a semiconductor layer 104 is formed so as to cover the insulating layer 102 with the electrodes 103a and 103b interposed therebetween.

As the semiconductor layer 104, a light-transmitting semiconductor film can be used.
The semiconductor layer 104 is used without being processed into an island of the semiconductor layer.

As the light-transmitting semiconductor film, for example, a light-transmitting oxide semiconductor film or the like can be used. As the light-transmitting oxide semiconductor film, for example, SnO ₂ , In ₂ O ₃ , Z
An oxide semiconductor film containing any of nO can be given. In the case of using an oxide semiconductor film, an oxide semiconductor film containing an amorphous component can also be used. Alternatively, an oxide semiconductor film including crystal grains (nanocrystal) can be used. At this time, a crystal grain (nanocrystal) in the oxide semiconductor film has a diameter of 1 nm to 10 nm, typically 2 nm.
It is about 4 nm to 4 nm.

For example, an oxide semiconductor film represented by InMO ₃ (ZnO) _m (m> 0) can be used as the light-transmitting semiconductor film. M is gallium (Ga), iron (Fe), nickel (
One metal element or a plurality of metal elements selected from Ni), manganese (Mn), and cobalt (Co) are shown. For example, M may be Ga, and may contain the above metal elements other than Ga, such as Ga and Ni or Ga and Fe. In addition to the metal element contained as M, some of the above oxide semiconductors contain Fe, Ni, other transition metal elements, or oxides of the transition metal as impurity elements. Note that an oxide semiconductor film containing indium, gallium, and zinc is also referred to as an In—Ga—Zn—O-based non-single-crystal film.

Through the above steps, the semiconductor device illustrated in FIG. 1A can be manufactured.

As shown as an example in FIG. 1, the semiconductor device of this embodiment forms a semiconductor film having a light-transmitting property, and the semiconductor film is processed without forming an island of the semiconductor layer. Is a semiconductor layer to be a channel formation layer. Since the semiconductor layer has a light-transmitting property, the semiconductor film can be used as a channel formation layer without forming an island of the semiconductor layer. Thereby, the island formation step of the semiconductor layer can be eliminated and the manufacture of the transistor can be simplified. In addition, damage to the semiconductor layer due to the island formation process of the semiconductor layer can be eliminated. In addition, the cost for the semiconductor layer island formation step can be reduced.

Note that the semiconductor device of this embodiment is normally off and preferably has a low off-state current, and the resistance value of the semiconductor layer is preferably set as appropriate so that the off-state current is low.

(Embodiment 2)
In this embodiment, a semiconductor device having a structure different from those of the semiconductor devices described in Embodiments 1 and 2 is described.

The semiconductor device which is one embodiment of the present invention can include at least a first semiconductor element and a second semiconductor element which are transistors. In this embodiment, a structure of a semiconductor device including a first transistor and a second transistor as an example of a semiconductor device including a first semiconductor element and a second semiconductor element will be described with reference to FIGS. To do. FIG. 3 is a cross-sectional view illustrating a structural example of the semiconductor device in this embodiment.

The semiconductor device illustrated in FIG. 3 includes a transistor 201 and a transistor 202 over a formation surface (a substrate 200 in FIG. 2).

The transistor 201 includes an electrode 2111, an insulating layer 2012, an electrode 2131a, and an electrode 2
131b and the semiconductor layer 204.

The transistor 202 includes an electrode 2112, an insulating layer 2012, an electrode 2132a, and an electrode 2
132b and the semiconductor layer 204.

The electrode 2111 and the electrode 2112 are provided over the substrate 200. Electrode 2111 and electrode 2
As 112, a material and a manufacturing method which can be used for the electrode 101 in the semiconductor device illustrated in FIG.

The insulating layer 2012 is provided so as to cover the upper surfaces of the electrode 2111 and the electrode 2112. As a material and a structure of the insulating layer 2012, the insulating layer 102 in the semiconductor device illustrated in FIG.
Materials and manufacturing methods applicable to the above can be used as appropriate.

Each of the electrode 2131a and the electrode 2131b, and the electrode 2132a and the electrode 2132b is selectively provided over the insulating layer 2012. The electrodes 2131a and 2131b function as a source electrode or a drain electrode of the transistor 201, and the electrodes 2132a and 2132b function as a source electrode or a drain electrode of the transistor 202. That is, a pair of source electrode and drain electrode is provided for each gate electrode. Further, as the electrode 2131a and the electrode 2131b, and the electrode 2132a and the electrode 2132b,
A material and a manufacturing method applicable to the electrode 103a and the electrode 103b in the semiconductor device illustrated in FIG. 1A can be used as appropriate.

The semiconductor layer 204 is provided so as to cover the upper surface of the insulating layer 2012 between the electrodes 2131a and 2131b, the upper surface and side surfaces of the electrode 2131a, and the upper surface and side surfaces of the electrode 2131b, and extends to the second semiconductor element, That is, the insulating layer 2012 is provided so as to cover the upper surface of the insulating layer 2012 between the electrodes 2132a and 2132b, the upper surface and side surfaces of the electrode 2132a, and the upper surface and side surfaces of the electrode 2132b. As the semiconductor layer 204, a material and a manufacturing method which can be used for the semiconductor layer 104 in the semiconductor device illustrated in FIG.

Note that in the semiconductor device illustrated in FIGS. 3A and 3B, the resistance value of the semiconductor layer 204 is preferably set as appropriate so that the transistor 201 and the transistor 202 are not conductive. Semiconductor layer 2
The resistance value of 04 can be set as appropriate depending on, for example, the distance between the transistor 201 and the transistor 202, the thickness of the semiconductor film, or the composition of the semiconductor film.

As exemplified in FIG. 3, the semiconductor device of this embodiment has a structure including a plurality of semiconductor elements. Further, the semiconductor device of the above embodiment has a structure using a semiconductor film as a channel formation layer, and the semiconductor film is not separated into a plurality of layers after film formation, that is, processed into islands of a plurality of semiconductor layers for each semiconductor element. First, the upper surface of the gate insulating layer between the source electrode and the drain electrode of the first semiconductor element, the upper surface and the side surface of the source electrode, and the upper surface and the side surface of the drain electrode are provided and extended to the second semiconductor element. Structure. Since the semiconductor film has a light-transmitting property, the semiconductor film can be used as a channel formation layer without forming the island of the semiconductor layer, and the island formation process of the semiconductor layer can be eliminated, thereby simplifying the manufacturing of the semiconductor device. be able to. Further, since the semiconductor layer island forming step is eliminated, damage to the semiconductor layer due to the semiconductor layer island formation can be eliminated.

Note that the semiconductor device illustrated in FIG. 3 includes two transistors over the same substrate; however, the present invention is not limited to this, and the semiconductor device of this embodiment includes three or more transistors. You can also. Even in a structure having three or more transistors, a semiconductor film formed without forming an island of the semiconductor layer can be used as a channel formation layer of each transistor. In addition, another semiconductor element such as a capacitor or a diode can be used instead of the transistor.

Note that this embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 3)
The semiconductor device which is one embodiment of the present invention can be applied to a pixel of a display device, for example. In this embodiment, a display device including a pixel to which the semiconductor device which is one embodiment of the present invention is applied will be described.

Note that a display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a connector (for example, FPC (Flexible pri
nted circuit), TAB (Tape Automated Bonding)
) A tape or TCP (Tape Carrier Package) module, a TAB tape or a module with a printed wiring board on top of TCP, or an IC (integrated circuit) using a COG (Chip On Glass) system as a display element All the modules directly mounted on the display device are also included in the display device.

In addition, the display device in this embodiment includes a panel in which the display element is sealed, and a module in which an IC or the like including a controller is mounted on the panel. Further, in the process of manufacturing the display device, the element substrate which corresponds to one embodiment before the display element is completed is provided with means for supplying current to the display element in each of the plurality of pixels.
Specifically, the element substrate may be in a state where only the pixel electrode of the display element is formed,
The state may be after the conductive film to be the pixel electrode is formed and before the pixel electrode is formed by etching, and all forms are applicable.

An example of a pixel structure of the display device and a method for manufacturing the pixel in this embodiment will be described with reference to FIGS. 4 to 10 are a top view and cross-sectional views illustrating an example of a method for manufacturing a pixel of the display device in this embodiment.

First, as shown in FIGS. 4A and 4B, a base film 4001 is formed over a substrate 400, and
A conductive layer 4011 and a conductive layer 4012 are selectively formed over the base film 4001.
1 and the upper surface of the conductive layer 4012 are formed, an opening 4021 is formed in part of the insulating layer 402 over the conductive layer 4012, and the conductive layer 4031, the conductive layer 4032, A conductive layer 4033 and a conductive layer 4034 are selectively formed.

As the substrate 400, a substrate applicable to the substrate 100 in Embodiment 1 can be used as appropriate.

The base film 4001 functions as a protective film. As a material of the base film 4001, for example, an oxide, nitride, oxynitride, or nitride oxide of any one of silicon, aluminum, yttrium, tantalum, and hafnium, or a compound containing at least two of these compounds is used. Can be used. Alternatively, a stacked film of the above-described films can be used. Note that the base film 4001 is not necessarily provided, but the base film 4001 is used.
By providing this, the influence of impurities from the substrate 400 side can be suppressed.

For the formation of the conductive layer 4011 and the conductive layer 4012, a material and a manufacturing method which can be applied to the electrode 101 in Embodiment 1 can be used as appropriate.

For the formation of the insulating layer 402, for example, a material and a manufacturing method which can be used for the insulating layer 102 in Embodiment 1 can be used as appropriate.

For example, a photolithography technique can be used to form the opening 4021. For example, a resist is formed on the insulating layer 402 by using a photolithography technique, and the insulating layer 402 is processed by etching using the resist as a mask. An opening 4021 can be formed.

For the formation of the conductive layers 4031 to 4034, materials and manufacturing methods that can be used for forming the electrodes 103a and 103b in Embodiment 1 can be used as appropriate.

Next, as illustrated in FIGS. 5A and 5B, the upper surface of the insulating layer 402 between the conductive layers 4031 and 4032, the upper surface of the insulating layer 402 between the conductive layers 4033 and 4034, and the conductive layer One semiconductor layer 404 is formed so as to cover top surfaces and side surfaces of the layers 4031 to 4034.

For the formation of the semiconductor layer 404, a material and a manufacturing method which can be used for the semiconductor layer 104 in Embodiment 1 can be used as appropriate. In the method for manufacturing the display device illustrated in FIGS. 5A to 5C, an oxide semiconductor film is formed as an example of the semiconductor layer.

As the oxide semiconductor film, for example, a film represented by InMO ₃ (ZnO) _m (m> 0) can be used. Note that M represents one metal element or a plurality of metal elements selected from gallium (Ga), iron (Fe), nickel (Ni), manganese (Mn), and cobalt (Co). For example, as M, there may be a case of Ga, Ga and Ni or Ga and Fe, etc.
The metal element other than Ga may be included. In addition to the metal element contained as M, some of the above oxide semiconductors contain Fe, Ni, other transition metal elements, or oxides of the transition metal as impurity elements. Note that in this specification, an oxide semiconductor film containing indium, gallium, and zinc is also referred to as an In—Ga—Zn—O-based non-single-crystal film.

Note that in the case where an In—Ga—Zn—O-based non-single-crystal film is used for the semiconductor layer 404, In—Ga—
After forming the Zn—O-based non-single-crystal film, 100 ° C. to 600 ° C., typically 200 ° C. to 400 ° C.
A heat treatment at ℃ is good. For example, the In—Ga—Zn—O-based oxide semiconductor film included in the semiconductor layer 404 is rearranged at an atomic level by performing heat treatment at 350 ° C. for 1 hour in an air or nitrogen atmosphere. By this heat treatment (including light annealing and the like), the semiconductor layer 40
4 can reduce distortion that hinders the movement of carriers. Note that there is no particular limitation on the timing of performing the above heat treatment as long as the semiconductor layer 404 is formed.

The In—Ga—Zn—O-based non-single-crystal film is formed at 200 ° C. to 50 ° C. after being formed by sputtering.
Heat treatment is performed at 0 ° C., typically 300 to 400 ° C., for 10 to 100 minutes. In the XRD (X-ray diffraction) analysis after the heat treatment, an amorphous structure is observed as the crystal structure of the In—Ga—Zn—O-based non-single-crystal film even after the heat treatment.

In addition, by manufacturing a transistor using an In—Ga—Zn—O-based non-single-crystal film,
A transistor having an electrical property with an on / off ratio of 10 ⁹ or more and a mobility of 10 or more at a gate voltage of ± 20 V can be manufactured. In addition, a transistor including an In—Ga—Zn—O-based non-single-crystal film can be normally off.

4 and 5, the transistor 421 and the capacitor 42 are formed over the same substrate 400.
2 and transistor 423 are formed.

The transistor 421 includes a gate electrode which is part of the conductive layer 4011, a gate insulating layer which is part of the insulating layer 402, a source electrode which is part of the conductive layer 4031, and the conductive layer 403.
2, and a channel formation layer including a part of the semiconductor layer 404. The transistor 421 functions as a pixel selection transistor.

The capacitor 422 includes a first electrode including a part of the conductive layer 4012, a dielectric layer including a part of the insulating layer 402 and a part of the semiconductor layer 404, and a second electrode including a part of the conductive layer 4033. Consists of electrodes. The capacitor 422 functions as a storage capacitor of the pixel.

The transistor 423 includes a gate electrode including a part of the conductive layer 4012, a gate insulating layer including a part of the insulating layer 402, a source electrode including a part of the conductive layer 4033, and a conductive layer 4034.
And a channel formation layer made of a part of the semiconductor layer 404. The transistor 423 functions as a pixel driving transistor.

Note that the resistance values of the semiconductor layers of the transistor 421, the capacitor 422, and the transistor 423 illustrated in FIG. 5 may be set to values such that the transistor 421, the capacitor 422, and the transistor 423 are not turned on by each semiconductor layer. preferable. The resistance value of the semiconductor layer is
For example, it can be set as appropriate depending on the length between elements or the thickness of the semiconductor film.

Further, as illustrated in FIGS. 6A and 6B, an interlayer film 405 is formed over the semiconductor layer 404, and an opening 4061 is selected in part of the semiconductor layer 404 and the interlayer film 405 over the conductive layer 4032. The opening 406 is formed in part of the semiconductor layer 404 and the interlayer film 405 over the opening 4021.
2 is selectively formed, and an opening 4063 is selectively formed in part of the semiconductor layer 404 and the interlayer film 405 over the conductive layer 4033. Note that part of the semiconductor layer 404 is also processed by forming the openings 4061 and 4062; however, in this specification, the processing is not included in the semiconductor layer island formation step.

The interlayer film 405 has a function of protecting the transistor and the capacitor. Interlayer film 405
For example, a film made of an oxide, nitride, oxynitride, or nitride oxide of any one of silicon, aluminum, yttrium, tantalum, and hafnium, or a compound containing at least two of these compounds is used. be able to. The film containing the compound can be formed using, for example, a sputtering method or a CVD method.

For example, a photolithography technique can be used to form the openings 4061 to 4063. For example, a resist is formed over the interlayer film 405, and the semiconductor layer 404 and the interlayer film 405 are processed by etching using the resist as a mask. Thus, the openings 4061 to 4063 can be formed.

Next, as illustrated in FIGS. 7A and 7B, a conductive layer 4071 is formed so as to be electrically connected to the conductive layer 4034 through the opening 4063 and conductive through the opening 4061. Layer 40
The conductive layer 4072 is formed so as to be electrically connected to the conductive layer 4012 and electrically connected to the conductive layer 4012 through the opening 4062.

As a material of the conductive layer 4071 and the conductive layer 4072, for example, a film containing a conductive material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, or scandium, or an alloy material containing these as a main component is used. Can be used. As a material for the conductive layers 4071 and 4072, a conductive film that has a small work function and reflects light can be used. For example, Ca, Al, CaF, MgAg, or AlL
i etc. are desirable. The conductive layer 4071 and the conductive layer 4072 can be formed using, for example, a photolithography technique. For example, a resist is formed using the photolithography technique, and the conductive film is etched and processed using the resist as a mask. A conductive layer 4071 and a conductive layer 4072 can be formed.

Next, as illustrated in FIGS. 8A and 8B, a partition layer 408 is formed over the interlayer film 405, the conductive layer 4071, and the conductive layer 4072, and a lower opening, for example, an opening 4061 to an opening is formed. An opening 4081 is formed in a portion other than directly above the portion 4063.

As a material for the partition layer 408, for example, an organic film or an inorganic film can be used, and examples thereof include polyimide, acrylic, and organic polysiloxane. The partition layer 408
In particular, it is preferable to use a photosensitive material.

Further, when the opening 4081 is formed in a portion other than the opening in the lower layer, for example, the openings 4061 to 4063, a step caused by overlapping of the plurality of openings can be suppressed. In addition, the opening 4081 is preferably formed so as to be an inclined surface having a continuous curvature on the side wall.

Further, a light emitting element is formed. The structure of a light-emitting element differs depending on how light is extracted. Each case will be described with reference to FIG. FIG. 9 is a cross-sectional view illustrating an example of a pixel structure of the display device of this embodiment.

FIG. 9A is a cross-sectional view of a pixel in the case of a top emission type. The pixel shown in FIG.
An electroluminescent layer 409 is formed so as to be electrically connected to the conductive layer 4072 through the opening 4081 shown in FIGS. 8A and 8B, and is further electrically connected to the electroluminescent layer 409. A conductive layer 410 is formed.

The electroluminescent layer 409 may be composed of a single layer or a plurality of layers stacked. For example, when the transistor 423 is an N-type transistor and the electroluminescent layer 409 includes a plurality of layers, an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer are stacked over the conductive layer 4072. Thus, the electroluminescent layer 409 can be formed. Note that it is not necessary to provide all of these layers.

As a material of the conductive layer 410 illustrated in FIG. 9A, for example, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, Indium tin oxide (also called ITO)
Alternatively, a light-transmitting conductive film such as indium zinc oxide or indium tin oxide to which silicon oxide is added can be used.

A light-emitting element 424 illustrated in FIG. 9A includes a conductive layer 4072 serving as a part of an anode electrode, an electroluminescent layer 409 serving as a light-emitting layer, and a conductive layer 410 serving as a part of a cathode electrode. When a voltage is applied between the anode electrode and the cathode electrode, the electroluminescent layer emits light,
The flash is activated. Light generated by the light-emitting layer is extracted from the conductive layer 4072 side. The conductive layer 4072 can function as part of the cathode electrode, and the conductive layer 410 can function as part of the anode electrode.

FIG. 9B is a cross-sectional view of a pixel in the case of a bottom emission type. In the pixel illustrated in FIG. 9B, a conductive layer 411 is formed so as to be electrically connected to the conductive layer 4072 through the opening 4081, and the electroluminescent layer is electrically connected to the conductive layer 411. 409 is formed, and the electroluminescent layer 4
A conductive layer 410 is formed so as to be electrically connected to 09, and the shielding film 41 is formed on the conductive layer 410.
2 is formed.

As a material for the conductive layers 4072 and 411, a light-transmitting conductive material can be used. For example, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, ITO, indium zinc oxide, indium tin oxide added with silicon oxide Things can be used. Moreover, if it is set as the film thickness of the grade which permeate | transmits light (preferably about 5-30 nm). For example, a conductive film such as aluminum can be used.

As the shielding film 412, for example, a metal that reflects light can be used. Moreover, it is not limited to a metal film, For example, resin etc. which added the black pigment can also be used.

A light-emitting element 424 illustrated in FIG. 9B includes a conductive layer 4072 serving as a part of an anode electrode, an electroluminescent layer 409 serving as a light-emitting layer, a conductive layer 410 serving as a part of a cathode electrode, and a shielding film 412.
Consists of. When a voltage is applied between the anode electrode and the cathode electrode, the electroluminescent layer emits light and enters a light emitting state. Light generated by the light emitting layer is extracted from the substrate 400 side. Note that the display device in this embodiment is used for a channel formation layer or the like of a transistor without separating the semiconductor film into a plurality of parts. However, since the semiconductor film has a light-transmitting property, the semiconductor film is not separated into a plurality of parts. Light generated by the light-emitting element 424 through the film can be extracted from the substrate 400 side.

FIG. 9C is a cross-sectional view of a pixel in the case of a dual emission type. In the pixel illustrated in FIG. 9B, a conductive layer 411 is formed so as to be electrically connected to the conductive layer 4072 through the opening 4081, and the electroluminescent layer is electrically connected to the conductive layer 411. 409 is formed, and the electroluminescent layer 4
A conductive layer 410 is formed so as to be electrically connected to 09.

As a material for the conductive layer 4072, the conductive layer 411, and the conductive layer 410, a light-transmitting conductive material can be used. For example, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, ITO, indium zinc oxide, indium tin oxide added with silicon oxide Things can be used. In addition, the extent of transmitting light (preferably 5n
m to about 30 nm). For example, a conductive film such as aluminum can be used.

A light-emitting element 424 illustrated in FIG. 9C includes a conductive layer 4072 serving as a part of an anode electrode, an electroluminescent layer 409 serving as a light-emitting layer, and a conductive layer 410 serving as a part of a cathode electrode. When a voltage is applied between the anode electrode and the cathode electrode, the electroluminescent layer emits light,
The flash is activated. Light generated by the light emitting layer is extracted from the substrate 400 side and the conductive layer 410 side. Note that the display device in this embodiment is used for a channel formation layer or the like of a transistor without separating the semiconductor film into a plurality of parts. However, since the semiconductor film has a light-transmitting property, the semiconductor film is not separated into a plurality of parts. Light generated by the light-emitting element 424 through the film can be extracted from the substrate 400 side.

Note that in the above display device, an organic EL element is described as a light-emitting element; however, the present invention is not limited thereto, and an inorganic EL element can also be used as a light-emitting element.

As shown as an example in FIGS. 4 to 9, the pixel in the display device of this embodiment includes a transistor and a semiconductor film which are formed using a semiconductor film formed without forming the semiconductor film into an island of the semiconductor layer. A capacitor element or the like is formed. Since the semiconductor film has a light-transmitting property, the semiconductor film can be used for a transistor, a capacitor, or the like without forming an island of the semiconductor layer.
Accordingly, the island formation step of the semiconductor layer can be eliminated, so that the number of manufacturing steps of the semiconductor device can be reduced and the manufacturing of the semiconductor device can be simplified. In addition, the cost for the semiconductor layer island formation step can be reduced. Further, since the semiconductor layer island formation step is eliminated, damage to the semiconductor layer due to the semiconductor layer island formation can be reduced.

In addition, since the semiconductor film used for the display device of this embodiment has a light-transmitting property, the semiconductor film can be divided into a plurality of semiconductor layers without forming an island of a plurality of semiconductor layers, such as a transistor and a capacitor. Even when it is used for the above, it is possible to prevent the influence when light is extracted.
For example, even in a display device having a structure in which light is emitted to the bottom surface illustrated in FIG. 9B or FIG. 9C, light can be extracted from the substrate side without being blocked by the semiconductor layer.

Further, a circuit configuration of a pixel manufactured through the manufacturing steps illustrated in FIGS. 4 to 9 will be described with reference to FIGS. FIG. 10 is a circuit diagram showing an equivalent circuit of a pixel manufactured by the manufacturing steps shown in FIGS.

The pixel illustrated in FIG. 10 includes a transistor 451, a capacitor 452, a transistor 453, and a light-emitting element 454.

In the transistor 451, a gate is electrically connected to the scan line 461, one of a source and a drain is electrically connected to the signal line 462, and a capacitor 452 is connected to the other of the source and the drain.
A high power supply potential is applied via.

The gate of the transistor 453 is electrically connected to the other of the source and the drain of the transistor 451, and a high power supply potential (also referred to as Vdd) is supplied to one of the source and the drain.

The light-emitting element 454 includes a first terminal and a second terminal. The first terminal is electrically connected to the other of the source and the drain of the transistor 453, and a low power supply potential (also referred to as Vss) is applied to the second terminal.

Next, the operation of the pixel shown in FIG. 10 will be described.

The transistor 451 is turned on by a scanning signal input from the scanning line 461, and a video signal (also referred to as a data signal) having a predetermined potential is supplied from the signal line 462 to the transistor 4.
53 is input to the gate.

The transistor 453 is turned on or off depending on a potential corresponding to the data signal input to the gate. When the transistor 453 is on, the potential of the light-emitting element 454 becomes a value corresponding to the gate potential and the high power supply potential of the transistor 453. At this time, the light emitting element 454
In addition, a current flows according to a voltage applied between the first terminal and the second terminal, and the light emitting element 454 emits light with a luminance corresponding to the amount of the flowing current. In addition, the capacitor 452 causes the transistor 4 to
Since the gate potential of 53 is maintained for a certain period of time, the light emitting element 454 maintains a light emitting state for a certain period of time.

In the case where a data signal input to the pixel from the signal line 462 is a digital signal, the pixel is turned on or off by switching on and off of the transistor 451. Therefore, gradation display can be performed using the area gradation method or the time gradation method. The area gradation method is a driving method in which gradation display is performed by dividing one pixel into a plurality of subpixels and independently driving each subpixel based on a data signal. The time gray scale method is a driving method for performing gray scale display by controlling a period during which a pixel emits light.

Since the light-emitting element 454 has a higher response speed than a liquid crystal element or the like, it is more suitable for the time gray scale method than the liquid crystal element. Specifically, when displaying by the time gray scale method, one frame period is divided into a plurality of subframe periods. Then, in accordance with the video signal, the light emitting element of the pixel is turned on or off in each subframe period. By dividing into a plurality of subframe periods, the total length of a period during which a pixel actually emits light during one frame period can be controlled by a video signal, and gradation can be displayed.

Note that this embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 4)
In this embodiment, a display device including a pixel including a liquid crystal element is described as another example of a display device including a pixel to which the semiconductor device of one embodiment of the present invention is applied.

A pixel structure of the display device in this embodiment will be described with reference to FIGS. FIG.
FIGS. 11A and 11B are diagrams illustrating a structure example of a pixel of a display device in this embodiment, FIG. 11A is a top view, and FIG. 11B is a cross-sectional view taken along line A <b> 1-A <b> 2 in FIG. It is. 1
In the pixel of the display device shown in FIG. 1, the description of the pixel of the display device shown in Embodiment 3 is used as appropriate for the same portion as the pixel of the display device shown in Embodiment 3.

A pixel shown in FIG. 11 includes a base film 5001 on a formation surface (a substrate 500 in FIG. 11B),
A conductive layer 5011 and a conductive layer 5012, and a conductive layer 5011 and a conductive layer 5 are formed over the base film 5001.
An insulating layer 502 covering the upper surface of 012; and a conductive layer 5031 and a conductive layer 503 over the insulating layer 502
2 and the semiconductor layer 5 covering the upper surface of the insulating layer 502 with the conductive layer 5031 and the conductive layer 5032 interposed therebetween.
04, an interlayer film 505 having an opening 507 over the semiconductor layer 504, and a conductive layer 506 electrically connected to the conductive layer 5032 through the opening 507. Note that FIG.
The semiconductor layer 504 and the interlayer film 505 are omitted for convenience.

As the substrate 500, for example, a substrate applicable to the substrate 400 illustrated in FIG. 4 can be used as appropriate.

The base film 5001 can be formed using a material and a manufacturing method which can be used for the base film 4001 illustrated in FIGS.

The conductive layer 5011 and the conductive layer 5012 are, for example, the conductive layer 4011 and the conductive layer 40 illustrated in FIG.
12 can be formed by appropriately using a material and a manufacturing method which can be applied.

The insulating layer 502 can be formed using a material and a manufacturing method which can be used for the insulating layer 402 illustrated in FIGS.

The conductive layer 5031 and the conductive layer 5032 are, for example, the conductive layers 4031 to 40 shown in FIG.
34 can be formed by appropriately using a material and a manufacturing method which can be used for forming 34.

The semiconductor layer 504 can be formed using a material and a manufacturing method that can be used for the semiconductor layer 404 illustrated in FIGS.

The interlayer film 505 can be formed using a material and a manufacturing method which can be used for the interlayer film 405 illustrated in FIGS.

The conductive layer 506 can be formed as appropriate by using a material and a manufacturing method which can be used for forming the conductive layer 4071 and the conductive layer 4072 illustrated in FIGS.

Note that part of the semiconductor layer 504 is processed by the formation of the opening 507; however, in this specification, the processing is not included in the island formation step of the semiconductor layer.

In addition, the pixel of the display device in this embodiment can have a structure illustrated in FIG. 12, for example. FIG. 12 is a cross-sectional view illustrating a structure example of a pixel of the display device of this embodiment. The pixel structure shown in FIG. 12 will be described below.

The pixel of the display device illustrated in FIG. 12 is electrically connected to the conductive layer 5014 through the conductive layer 5013 and the conductive layer 5014 provided over the base film 5001 and the insulating layer 502 in addition to the pixel structure illustrated in FIG. Conductive layer 5033, insulating layer 502, semiconductor layer 504, and interlayer film 505
The conductive layer 5062 electrically connected to the conductive layer 5013 through the opening provided in the semiconductor layer 504 and the conductive layer 5033 through the opening provided in the semiconductor layer 504 and the interlayer film 505 are connected. And a conductive layer 5063.

The conductive layers 5013 and 5014 can be formed using the same layers as the conductive layers 5011 and 5012.

The conductive layer 5033 can be formed using the same layer as the conductive layer 5031 and the conductive layer 5032.

The conductive layer 5062 and the conductive layer 5063 can be formed using the same layer as the conductive layer 506.

The conductive layer 5013 and the conductive layer 5062 serve as an electrode or a wiring for connecting to the FPC.
The conductive layer 5014, the conductive layer 5033, and the conductive layer 5063 serve as electrodes or wirings for connecting to the FPC.

As shown in FIG. 12, the pixel of the display device in this embodiment can have a structure in which the pixel and the connection electrode to the FPC are provided over the same substrate.

Further, a structure of a pixel in which a liquid crystal element is formed will be described with reference to FIG. FIG. 13 is a cross-sectional view illustrating a structure example of a pixel in this embodiment.

13 includes a substrate 510, a conductive layer 509 on one surface of the substrate 510, and a liquid crystal layer 508 between the conductive layer 506 and the conductive layer 509 in addition to the pixel structure illustrated in FIG. That is, the substrate 500 and the substrate 510 are attached to each other with the liquid crystal layer 508 interposed therebetween.

The conductive layer 509 can be formed using, for example, a material and a manufacturing method which can be used for forming the conductive layer 410 illustrated in FIGS.

Further, a circuit configuration of the pixel shown in FIG. 13 will be described with reference to FIG. FIG. 14 is a circuit diagram showing an equivalent circuit of the pixel shown in FIG.

The pixel illustrated in FIG. 14 includes a transistor 511, a liquid crystal element 512, a capacitor 513, a scanning line 521, and a signal line 522.

The transistor 511 functions as a selection switch, and has a gate electrically connected to the scan line 521 and one of a source and a drain electrically connected to the signal line 522.

The liquid crystal element 512 includes a first terminal and a second terminal. The first terminal is electrically connected to the other of the source and the drain of the transistor 511, and a ground potential or a constant potential is applied to the second terminal. .

The capacitor 513 includes a first terminal and a second terminal. The first terminal is electrically connected to the other of the source and the drain of the transistor 511, and a ground potential or a constant potential is applied to the second terminal. . Note that although the capacitor 513 is not necessarily provided, the influence of noise of the transistor 511 can be suppressed by providing the capacitor 513.

As a display method of the display device in this embodiment, for example, TN (Twisted)
Nematic) mode, IPS (In-Plane-Switching) mode,
FFS (Fringe Field Switching) mode, MVA (Multi
-Domain Vertical Alignment) mode, PVA (Patterte
rned Vertical Alignment), ASM (Axial Sym)
Metric aligned Micro-cell) mode, OCB (Optica)
l Compensated Birefringence) mode, FLC (Ferr
oleic Liquid Crystal) mode, AFLC (AntiFe
(roelectric Liquid Crystal) can be used.

Alternatively, liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used for the display device in this embodiment. The blue phase is one of the liquid crystal phases. When the temperature of the cholesteric liquid crystal is increased, the blue phase appears immediately before the transition from the cholesteric phase to the isotropic phase. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition mixed with 5% by weight or more of a chiral agent is used to improve the temperature range, and the liquid crystal composition is used for the liquid crystal layer 508. A liquid crystal composition including a liquid crystal exhibiting a blue phase and a chiral agent has a response speed as short as 10 μs to 100 μs and is optically isotropic, so that alignment treatment is unnecessary and viewing angle dependency is small.

Next, the operation of the pixel shown in FIG. 14 will be described.

First, a pixel to which data is written is selected. In the selected pixel, the transistor 511 is turned on by a signal input from the scan line 521.

At this time, a data signal from the signal line 522 is input through the transistor 511, the potential of the first terminal of the liquid crystal element 512 becomes the potential of the data signal, and the liquid crystal element 512 has the first terminal and the second terminal.
The transmittance is set according to the voltage applied between the terminals. After data writing, the scanning line 52
The transistor 511 is turned off by a signal input from 1, and the liquid crystal element 512 maintains the transmittance set for the display period and enters the display state. The above operation is sequentially performed for each scanning line 521, and the above operation is performed in all the pixels. The above is the operation of the pixel.

In moving image display of a liquid crystal display device, there is a problem that an afterimage is generated or a moving image is blurred because the response of the liquid crystal molecules themselves is slow. In order to improve the moving image characteristics of the liquid crystal display device, there is a driving technique called black insertion, in which full black display is performed every other frame.

There is also a driving technique called double speed driving that improves the response speed by increasing the normal vertical period by 1.5 times or more.

In addition, in order to improve the moving image characteristics of the liquid crystal display device, a surface light source is configured using a plurality of LED (light emitting diode) light sources or a plurality of EL light sources as a backlight, and each light source constituting the surface light source is independent. There is also a driving technique that performs intermittent lighting driving within one frame period. As the surface light source, three or more kinds of LEDs may be used, or white light emitting LEDs may be used. Since a plurality of LEDs can be controlled independently, the LE is matched to the optical modulation switching timing of the liquid crystal layer.
The light emission timing of D can also be synchronized. Since this driving technique can partially turn off the LED, an effect of reducing power consumption can be achieved particularly in the case of video display in which the ratio of the black display area occupying one screen is large.

By combining these driving techniques, the display characteristics such as the moving picture characteristics of the liquid crystal display device can be improved as compared with the related art.

In the display device including the pixel manufactured in the manufacturing process illustrated in FIGS. 4 to 9 in the pixel portion, the semiconductor film has a light-transmitting property, so that an island of a plurality of semiconductor layers is not formed by separation after the film formation. The semiconductor film can be used as a channel formation layer of a transistor or a dielectric layer of a capacitor, so that the number of manufacturing steps can be reduced and manufacturing cost can be reduced.

Note that this embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 5)
In this embodiment, a display device to which the pixel having the structure described in Embodiment 3 or 4 can be applied will be described.

A structure of a pixel of the display device in this embodiment will be described with reference to FIGS. FIG. 15 is a block diagram illustrating a configuration example of the display device in this embodiment.

The display device illustrated in FIG. 15 includes a pixel portion 601, a scan line driver circuit 602, and a signal line driver circuit 6.
03.

The pixel portion 601 has a dot matrix structure having a plurality of pixels 604. Specifically,
A plurality of pixels 604 are arranged in the matrix direction. Each pixel 604 is electrically connected to the scan line driver circuit 602 through the scan line, and the signal line driver circuit 603 through the signal line.
Is electrically connected. Note that in FIG. 15, scanning lines and signal lines are omitted for convenience.

The scan line driver circuit 602 is a circuit that selects a pixel 604 to which a data signal is input, and outputs a selection signal to the pixel 604 through the scan line.

The signal line driver circuit 603 is a circuit that outputs data to be written to the pixel 604 as a signal, and outputs pixel data as a signal to the pixel 604 selected by the scanning line driver circuit 602 via the signal line.

As the pixel 604, for example, any of the pixels of the display device having the structure described in Embodiment 3 or Embodiment 4 can be used as appropriate.

Next, structural examples of the scan line driver circuit 602 and the signal line driver circuit 603 are described with reference to FIGS. FIG. 16 is a block diagram illustrating a structure of a driver circuit, FIG. 16A is a block diagram illustrating a structure of a scanning line driver circuit, and FIG. 16B is a block diagram illustrating a structure of a signal line driver circuit. is there.

First, the scan line driver circuit 602 includes a shift register 610, a level shifter 611, and a buffer circuit 612 as illustrated in FIG.

The shift register 610 is configured using a plurality of sequential logic circuits. Shift register 6
10 receives a signal such as a gate start pulse (GSP) signal and a gate clock signal (GCK), and sequentially outputs a selection signal in each sequential logic circuit.

In addition, as illustrated in FIG. 16B, the signal line driver circuit 603 includes a shift register 621,
Latch circuit 622, latch circuit 623, level shifter 624, and buffer circuit 625
And having.

The shift register 621 is formed using a plurality of sequential logic circuits. Shift register 6
21 receives a signal such as a source start pulse (SSP) signal and a source clock signal (SCK), and sequentially outputs a selection signal in each sequential logic circuit.

A video data (DATA) signal is input to the latch circuit 622.

The buffer circuit 625 has a function of amplifying a signal and includes an operational amplifier and the like.

The latch circuit 623 can temporarily hold a latch (LAT) signal, and the held latch signals are output to the pixel portion 601 in FIG. 4 all at once. This is called line sequential driving. Therefore, the latch circuit 623 can be omitted if the pixel performs dot sequential driving instead of line sequential driving.

Next, the operation of the display device shown in FIG. 15 will be described.

First, a scanning line is selected by the scanning line driving circuit 602, and the pixel 60 connected to the selected scanning line.
4, a signal input from the scanning line driving circuit 602 outputs a data signal from the signal line driving circuit 603 via the signal line. Thus, the pixel 604 is in a display state in which data is written. A scanning line is selected by the scanning line driving circuit 602 and all the pixels 604 are selected.
Data writing is performed in step. The above is the operation of the display device illustrated in FIG.

Further, an appearance and a cross section of the light-emitting panel as one embodiment of the display device in this embodiment will be described with reference to FIGS. FIGS. 17A and 17B are diagrams illustrating a structure example of the light-emitting panel in this embodiment, FIG. 17A is a top view, and FIG. 17B is a line HI in FIG.
Corresponds to a cross-sectional view in FIG.

The light-emitting panel illustrated in FIG. 17 includes a pixel portion 6502 and a signal line driver circuit 6 over a first substrate 6501.
503a and 6503b and scanning line driver circuits 6504a and 6504b, and the pixel portion 65
02, signal line driver circuits 6503a and 6503b, and scanning line driver circuits 6504a and 650
A sealing material 6505 is provided so as to surround 4b. A second substrate 6506 is provided over the pixel portion 6502, the signal line driver circuits 6503a and 6503b, and the scan line driver circuits 6504a and 6504b. Therefore, the pixel portion 6502 and the signal line driver circuits 6503a and 650
3b and the scanning line driving circuits 6504a and 6504b are connected to the first substrate 6501 and the sealing material 6 respectively.
505 and the second substrate 6506 are sealed together with the filler 6507. Thus, it is preferable to package (enclose) with a protective film (bonded film, ultraviolet curable resin film, etc.) or a cover material that has high air tightness and little degassing so as not to be exposed to the outside air.

In addition, the pixel portion 6502 and the signal line driver circuits 6503a and 6503 provided over the first substrate 6501 are provided.
503b and the scan line driver circuits 6504a and 6504b each include a plurality of TFTs. In FIG. 17B, the TFT 6510 included in the pixel portion 6502 and the signal line driver circuit 6503 are included.
A TFT 6509 included in a is illustrated. Pixel portion 6502, signal line driver circuit 650
3a, 6503b, and TF included in each of the scanning line driving circuits 6504a, 6504b
For example, any of the transistors described in the above embodiments can be used as T. In the semiconductor device illustrated in FIG. 17, the structure illustrated in FIG. 1A is applied as an example of a transistor.
For specific description, the description of FIG. In FIG. 17, the TFT
Reference numerals 6509 and 6510 denote N-type TFTs.

In addition, the light-emitting panel shown in FIG. 17 has an insulating layer (insulating layer 65) that functions as a protective layer or a planarization insulating film in order to reduce the surface unevenness of the TFT and to improve the reliability of the TFT.
51, insulating layer 6552).

Here, an insulating layer 6551 having a stacked structure is formed as the protective layer. Here, the insulating layer 655
As the first layer, a silicon oxide film is formed by sputtering. Use of a silicon oxide film as the protective layer is effective in preventing hillocks in the aluminum film used as the source electrode and the drain electrode.

Further, as the second layer of the insulating layer 6551, a silicon nitride film is formed by a sputtering method. When a silicon nitride film is used as the protective layer, mobile ions such as sodium can be prevented from entering the semiconductor region, and the electrical characteristics of the TFT can be prevented from changing.

Further, after forming the protective layer, the semiconductor layer may be annealed (250 ° C. to 400 ° C.).

An insulating layer 6552 is formed as the planarization insulating film. As the insulating layer 6552, an organic material having heat resistance such as polyimide, acrylic, benzocyclobutene, polyamide, or epoxy can be used. In addition to the organic material, a low dielectric constant material (low-k material), a siloxane resin, PSG (phosphorus glass), BPSG (phosphorus boron glass), or the like can be used. Note that the insulating layer 6552 may be formed by stacking a plurality of insulating films formed using these materials.

Note that the siloxane-based resin is Si—O—S formed using a siloxane-based material as a starting material.
It corresponds to a resin containing i-bond. Siloxane resins may use organic groups (for example, alkyl groups and aryl groups) and fluoro groups as substituents. The organic group may have a fluoro group.

There is no particular limitation on the formation method of the insulating layer 6552, and a sputtering method, an SOG method, spin coating, dip coating, spray coating, a droplet discharge method (such as an ink jet method, screen printing, or offset printing), doctor, and the like depending on the material. A knife, roll coater, curtain coater, knife coater, or the like can be used. In the case where the insulating layer 6552 is formed using a material solution, the semiconductor layer may be annealed (300 ° C. to 400 ° C.) at the same time as the baking step. By combining the baking process of the insulating layer 6552 and the annealing of the semiconductor layer, a display device can be efficiently manufactured.

A light emitting element 6511 is provided over the TFT 6510. The light emitting element 6511 is a TFT 6
510 is electrically connected to a source electrode or a drain electrode 510 and includes a stacked structure of a first electrode 6517, an electroluminescent layer 6512, and a second electrode 6513 which are pixel electrodes. Note that the light-emitting element 6511 is not limited to the structure illustrated in FIGS. 17A and 17B, and in the display device of this embodiment, the structure of the light-emitting element 6511 can be changed as appropriate depending on the direction in which the light from the light-emitting element 6511 is extracted.

A partition 6520 is provided over the first electrode 6517 and further includes an electroluminescent layer 6512 so as to be electrically connected to the first electrode 6517 through an opening provided in the partition 6520. A second electrode 6513 is provided over the layer 6512. As the partition wall 6520, a material and a manufacturing method which can be used for the partition layer 408 illustrated in FIG. 8 can be used as appropriate. In particular, a photosensitive material is preferably used so that an opening is formed over the first electrode 6517 so that the side wall of the opening has an inclined surface formed with a continuous curvature.

As the electroluminescent layer 6512, a material and a manufacturing method which can be applied to the electroluminescent layer 409 illustrated in FIGS. Further, the electroluminescent layer 6512 may be composed of a single layer or a plurality of layers.

In the light-emitting panel illustrated in FIG. 17, a protective layer may be formed over the second electrode 6513 and the partition wall 6520 so that oxygen, hydrogen, moisture, carbon dioxide, or the like does not enter the light-emitting element 6511. As the protective layer, a silicon nitride film, a silicon nitride oxide film, a DLC film, or the like can be formed.

In addition, signal line driver circuits 6503a and 6503b, and scan line driver circuits 6504a and 6504b
Alternatively, various signals and potentials applied to the pixel portion 6502 are FPC 6518a and 6518.
b.

In the light-emitting panel illustrated in FIG. 17, the connection terminal electrode 6515 is formed using the same conductive film as the first electrode 6517 included in the light-emitting element 6511, and the connection terminal electrode 6516 includes the TFT 650.
9 and 6510 are formed of the same conductive film as the source and drain electrodes.

Further, the semiconductor layer 6550 included in the TFTs 6509 and 6510 is provided over the connection terminal electrode 6516 without being separated, and the sealant 6505 is at least the semiconductor layer 6550.
The connection terminal electrode 6515 is formed over the connection terminal electrode 6516 with the semiconductor layer 6550 interposed therebetween. Note that the structure including the connection terminal electrode 6515 is described in the light-emitting panel illustrated in FIG. 17; however, the present invention is not limited thereto, and the light-emitting panel of this embodiment uses a semiconductor layer included in the TFTs 6509 and 6510 as the connection terminal electrode. You can also. At this time, it is preferable to set the conductivity of at least the semiconductor layer to be the connection terminal electrode to a value that can function as the connection terminal electrode.

The connection terminal electrode 6515 is electrically connected to a terminal included in the FPC 6518a through an anisotropic conductive film 6519.

As a substrate having a light-transmitting property with respect to a substrate positioned in the light extraction direction from the light-emitting element 6511, the second substrate must be light-transmitting. In that case, a light-transmitting material such as a glass plate, a plastic plate, a polyester film, or an acrylic film is used.

In addition to the inert gas such as nitrogen or argon, the filler 6507 can be an ultraviolet curable resin or a thermosetting resin, such as PVC (polyvinyl chloride), acrylic,
Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EV
A (ethylene vinyl acetate) can be used. In the display device illustrated in FIG. 17, as an example, nitrogen is used as the filler 6507.

Further, if necessary, an optical film such as a polarizing plate, a circularly polarizing plate (including an elliptical polarizing plate), a retardation plate (λ / 4 plate, λ / 2 plate), a color filter, or the like on the emission surface of the light emitting element 6511 May be provided as appropriate. Further, an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment can be performed that diffuses reflected light due to surface irregularities and reduces reflection.

The signal line driver circuits 6503a and 6503b and the scan line driver circuits 6504a and 6504b are not limited to the structure illustrated in FIGS. 17A and 17B, and in the display device of this embodiment, a single crystal semiconductor film or a multi-layer on a separately prepared substrate. A structure in which a driver circuit formed of a crystalline semiconductor film is mounted may be employed. Further, only the signal line driver circuits 6503a and 6503b, or the signal line driver circuit 6
A part of 503a and 6503b, only the scanning line driver circuits 6504a and 6504b, or only a part of the scanning line driver circuits 6504a and 6504b may be separately formed and mounted.

Through the above process, a highly reliable light-emitting panel can be manufactured.

Next, as one mode of the display device in this embodiment, the appearance and a cross section of a liquid crystal panel will be described with reference to FIGS. 18A and 18B are diagrams illustrating a structure example of a liquid crystal panel in this embodiment. FIGS. 18A1 and 18A are top views, and FIG.
It is sectional drawing in MN of 2).

The liquid crystal panel illustrated in FIG. 18 includes a pixel portion 6002, a signal line driver circuit 6003, and a scan line driver circuit 6004 over a first substrate 6001, and the pixel portion 6002 and the signal line driver circuit 60.
03 and the scanning line driving circuit 6004 so as to surround the sealing material 6000 and the sealing material 6
005 is provided. A second substrate 6006 is provided over the pixel portion 6002 and the scan line driver circuit 6004. The pixel portion 6002 and the scan line driver circuit 6004 include the first substrate 6001, the sealant 6000, the sealant 6005, and the first substrate. The second substrate 6006 is sealed together with the liquid crystal layer 6008. The TFTs 6010 and 6011 and the liquid crystal element 6013 are included.
The substrate 6001 and the second substrate 6006 are sealed with a sealant 6000 and a sealant 6005. Further, the sealing material 6000 and the sealing material 6 on the first substrate 6001 are used.
A signal line driver circuit 6003 is mounted on a separately prepared substrate in a region different from the region surrounded by 005.

Note that a connection method of a separately formed drive circuit is not particularly limited, and a COG method,
A wire bonding method, a TAB method, or the like can be used. FIG. 18 (A1)
Is an example of mounting the signal line driver circuit 6003 by the COG method, and FIG.
In this example, the signal line driver circuit 6003 is mounted by a TAB method.

In addition, the pixel portion 6002 provided over the first substrate 6001 and the scan line driver circuit 6004 include
A plurality of TFTs are provided. In FIG. 18B, the TFT 6010 included in the pixel portion 6002
And a TFT 6011 included in the scan line driver circuit 6004.

As the TFTs 6010 and 6011, any of the TFTs having the structure described in any of the above embodiments can be used. In the liquid crystal panel illustrated in FIG. 18, a TFT having the structure illustrated in FIG. 1A is used as an example of a TFT. In the liquid crystal panel shown in FIG.
011 is described as an N-type TFT.

In addition, the pixel electrode 6030 included in the liquid crystal element 6013 is electrically connected to the source electrode or the drain electrode of the TFT 6010. Then, the counter electrode 6031 of the liquid crystal element 6013 is used.
Is formed on the second substrate 6006. A portion where the pixel electrode 6030, the counter electrode 6031, and the liquid crystal layer 6008 overlap corresponds to the liquid crystal element 6013. The pixel electrode 60
30 and the counter electrode 6031 are provided with insulating layers 6032 and 6033 each functioning as an alignment film, and a liquid crystal layer 6008 is sandwiched between the insulating layers 6032 and 6033.

Note that as the first substrate 6001 and the second substrate 6006, substrates applicable to the substrate 100 illustrated in FIG. 1 can be used as appropriate.

The spacer 6035 is a columnar partition wall obtained by selectively etching the insulating film, and is provided to control the distance (cell gap) between the pixel electrode 6030 and the counter electrode 6031. A spherical spacer may be used. The counter electrode 6031 is
The TFT 6010 is electrically connected to a common potential line provided on the same substrate. With the use of the common connection portion, the counter electrode 6031 and the common potential line can be electrically connected to each other through conductive particles disposed between the pair of substrates. Note that the conductive particles are included in the sealant 6005.

Note that the liquid crystal panel illustrated in FIG. 18 is an example of a transmissive liquid crystal display panel, but is not limited thereto, and the liquid crystal display panel of this embodiment is a reflective liquid crystal display panel or a transflective liquid crystal display panel. You can also.

In the liquid crystal display panel of this embodiment, a polarizing plate is provided on the outer side (viewing side) of the substrate, a colored layer is provided on the inner side, and an electrode used for the display element is provided in this order, or a polarizing plate is provided on the inner side of the substrate. Can be. In addition, the stacked structure of the polarizing plate and the colored layer may be set as appropriate depending on the material and manufacturing process conditions of the polarizing plate and the colored layer. Further, a light shielding film functioning as a black matrix may be provided.

In addition, the liquid crystal display panel illustrated in FIG. 18 has an insulating layer (an insulating layer 6020, an insulating layer) that functions as a protective layer or a planarization insulating film in order to reduce the surface unevenness of the TFT and improve the reliability of the TFT. The layer 6021) is covered.

Here, an insulating layer 6020 having a stacked structure is formed as the protective layer. Here, the insulating layer 602
As the first layer, a silicon oxide film is formed by sputtering. Use of a silicon oxide film as the protective layer is effective in preventing hillocks in the aluminum film used as the source electrode and the drain electrode.

Further, as the second layer of the insulating layer 6020, a silicon nitride film is formed by a sputtering method. When a silicon nitride film is used as the protective layer, it is possible to prevent mobile ions such as sodium from entering the semiconductor region and changing the electrical characteristics of the TFT.

Further, after forming the protective layer, the semiconductor layer may be annealed (250 ° C. to 400 ° C.).

In addition, an insulating layer 6021 is formed as the planarization insulating film. As the insulating layer 6021, an organic material having heat resistance such as polyimide, acrylic, benzocyclobutene, polyamide, or epoxy can be used. In addition to the organic material, a low dielectric constant material (low-k material), a siloxane resin, PSG (phosphorus glass), BPSG (phosphorus boron glass), or the like can be used. Note that the insulating layer 6021 may be formed by stacking a plurality of insulating films formed using these materials.

Note that the siloxane-based resin is a Si—O— formed using a siloxane-based material as a starting material.
It corresponds to a resin containing Si bonds. Siloxane resins may use organic groups (for example, alkyl groups and aryl groups) and fluoro groups as substituents. The organic group may have a fluoro group.

The formation method of the insulating layer 6021 is not particularly limited, and depending on the material, a sputtering method, an SOG method, spin coating, dipping, spray coating, a droplet discharge method (inkjet method, screen printing, offset printing, etc.), doctor A knife, roll coater, curtain coater, knife coater, or the like can be used. In the case where the insulating layer 6021 is formed using a material solution, the semiconductor layer may be annealed (300 ° C. to 400 ° C.) at the same time as the baking step. By combining the baking process of the insulating layer 6021 and the annealing of the semiconductor layer, a display device can be efficiently manufactured.

The pixel electrode 6030 and the counter electrode 6031 include, for example, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide, indium Zinc oxide,
It can be formed using a light-transmitting conductive material such as indium tin oxide to which silicon oxide is added.

The pixel electrode 6030 and the counter electrode 6031 can be formed using a conductive composition containing a conductive high molecule (also referred to as a conductive polymer). The pixel electrode formed using the conductive composition preferably has a sheet resistance of 10,000Ω / or less and a light transmittance of 70% or more at a wavelength of 550 nm. Further, the resistivity of the conductive polymer contained in the conductive composition is 0.1.
It is preferable that it is below Ω · cm.

As the conductive polymer, a so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or a derivative thereof, polypyrrole or a derivative thereof, polythiophene or a derivative thereof, or a copolymer of two or more kinds thereof can be given.

In addition, a separately formed signal line driver circuit 6003 and a scan line driver circuit 6004 or the pixel portion 6
Various signals and potentials applied to 002 are supplied from the FPC 6018.

In addition, the connection terminal electrode 6015 is formed using the same conductive film as the pixel electrode 6030 included in the liquid crystal element 6013, and the terminal electrode 6016 is formed using the same conductive film as the source and drain electrodes of the TFTs 6010 and 6011.

Further, the semiconductor layer 6050 included in the TFTs 6010 and 6011 is provided over the terminal electrode 6016 without being separated, and the connection terminal electrode 6015 is provided over the terminal electrode 6016 through the semiconductor layer 6050, and the sealing material 6000 and the sealing material 6005 is provided over the substrate 6001 with at least the semiconductor layer 6050 interposed therebetween. In FIG. 18, the connection terminal electrode 601 is used.
Although the structure having 5 is described, the present invention is not limited to this, and in the display device of this embodiment,
The semiconductor layer 6050 can also be used as a connection terminal electrode. At this time, the conductivity of at least the semiconductor layer 6050 serving as the connection terminal electrode is preferably set to a value that can function as the connection terminal electrode.

The connection terminal electrode 6015 is electrically connected to a terminal included in the FPC 6018 through an anisotropic conductive film 6019.

In the liquid crystal panel shown in FIG. 18, a signal line driver circuit 6003 is separately formed, and the first substrate 60 is formed.
However, the present invention is not limited to this, and the liquid crystal panel in this embodiment may be mounted with a scan line driver circuit formed separately, or a part of the signal line driver circuit or Only a part of the scanning line driving circuit may be separately formed and mounted.

As shown in FIG. 18 as an example, a liquid crystal panel to which the semiconductor device which is one embodiment of the present invention is applied can be manufactured.

Further, an example of a liquid crystal display module using the liquid crystal panel will be described with reference to FIG.

FIG. 19 shows an example of a liquid crystal display module. As shown in FIG. 19, the TFT substrate 2
600 and a counter substrate 2601 are fixed to each other by a sealant 2602, and a pixel portion 2603 including a TFT and the like, a display element 2604 including a liquid crystal layer, a coloring layer 2605, and a polarizing plate 2606 are provided therebetween to form a display region. The colored layer 2605 is necessary for color display.
In the case of the RGB method, a colored layer corresponding to each color of red, green, and blue is provided corresponding to each pixel. A polarizing plate 2606 and a polarizing plate 260 are provided outside the TFT substrate 2600 and the counter substrate 2601.
7. A diffusion plate 2613 is provided. The light source is composed of a cold cathode tube 2610 and a reflection plate 2611, and the circuit board 2612 is a TFT substrate 260 by a flexible wiring board 2609.
0 is connected to the wiring circuit portion 2608, and external circuits such as a control circuit and a power supply circuit are incorporated. Moreover, you may laminate | stack in the state which had the phase difference plate between the polarizing plate and the liquid-crystal layer.

As described above, a liquid crystal display module can be formed using the liquid crystal panel of this embodiment.

Note that the display device of this embodiment has a structure in which a semiconductor film is used for a channel formation layer or the like of a TFT without separating the semiconductor film; It is also possible to release the charge accumulated in the outside. At this time, the resistance value of the semiconductor film is preferably set to a value in which a plurality of semiconductor elements such as transistors are not electrically connected to each other by the semiconductor layer and the charge accumulated in the manufacturing stage can be released. In addition, in order to release charges accumulated in the display device to the outside, the resistance value of a part of the semiconductor film is lowered, and the semiconductor layer prevents a plurality of semiconductor elements such as transistors from conducting to each other. A process of increasing the resistance value of the part can also be performed.

Note that this embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 6)
In this embodiment, electronic paper is described as an example of a display device which is one embodiment of the present invention.

The semiconductor device which is one embodiment of the present invention can also be used for electronic paper. Electronic paper
It is also called an electrophoretic display device (also referred to as an electrophoretic display), and has the same readability as paper, low power consumption compared to other display devices, and a thin and light shape. .

The electrophoretic display can be considered in various forms, and a plurality of microcapsules including first particles having a positive charge and second particles having a negative charge are dispersed in a solvent or a solute. In other words, by applying an electric field to the microcapsules, the particles in the microcapsules are moved in opposite directions to display only the color of the particles assembled on one side. Note that the first particle or the second particle contains a dye and does not move in the absence of an electric field. In addition, the color of the first particles and the color of the second particles are different (including colorless).

In this way, the electrophoretic display moves a substance having a high dielectric constant to a high electric field region.
This is a display that utilizes a so-called dielectrophoresis phenomenon. The electrophoretic display does not require a polarizing plate and a counter substrate necessary for a liquid crystal display device, and the thickness and weight are reduced.

What the above microcapsules are dispersed in a solvent is called electronic ink,
This electronic ink can be printed on the surface of glass, plastic, cloth, paper and the like. Color display is also possible by using particles having color filters or pigments.

In addition, an active matrix display device can be completed by arranging a plurality of the above microcapsules so as to be appropriately sandwiched between two electrodes on an active matrix substrate, and display can be performed by applying an electric field to the microcapsules. it can.

Note that the first particles and the second particles in the microcapsule include a conductor material, an insulator material, a semiconductor material, a magnetic material, a liquid crystal material, a ferroelectric material, an electroluminescent material,
A kind of material selected from electrochromic materials and magnetophoretic materials, or a composite material thereof may be used.

Next, the structure of electronic paper in this embodiment will be described with reference to FIG. FIG. 20 is a cross-sectional view showing an example of the structure of electronic paper in this embodiment.

20 includes a TFT 581 over a substrate 580, an insulating layer 583, an insulating layer 584, and an insulating layer 585 which are stacked over the TFT 581, the insulating layers 583 to 585, and the TFT 581. TFT 5 through an opening provided in the semiconductor layer 582
81, an electrode 587 in contact with the source or drain electrode, an electrode 588 provided on the substrate 596, a black region 590a and a white region 590b between the electrode 586 and the electrode 588, and a cavity 594 filled with liquid around Spherical particles 589 including spherical particles 58
9 and a filler 595 provided around 9.

As the TFT 581, the semiconductor device which is one embodiment of the present invention can be used. FIG.
In the electronic paper shown in FIG. 1, a semiconductor device having a structure shown in FIG. 1A is applied as an example.

The method using the spherical particles 589 is called a twist ball display method, and the twist ball display method is divided into white and black between the first electrode and the second electrode which are electrodes used in the display element. In this method, the spherical particles are arranged, a potential difference is generated between the first electrode and the second electrode, and the orientation of the spherical particles is controlled.

Further, instead of the spherical element, an electrophoretic element can be used. As the electrophoretic element, for example, a microcapsule having a diameter of about 10 μm to 200 μm in which transparent liquid, positively charged white fine particles, and negatively charged black fine particles are enclosed can be used. Similar to the spherical element, the microcapsule provided between the first electrode and the second electrode has white particles and black particles reversed when an electric field is applied by the first electrode and the second electrode. Move in the direction of. Thereby, white or black can be displayed. A display element applying this principle is an electrophoretic display element. Since the electrophoretic display element has a higher reflectance than the liquid crystal display element, an auxiliary light is unnecessary. In addition, the electrophoretic display element consumes less power than the liquid crystal display element and can recognize the display portion even in a dim place. In addition, since electric paper using a spherical element or an electrophoretic element can hold an image once displayed even when power is not supplied to the display portion, the electronic paper is kept away from the power supply portion. Even in such a case, the displayed image can be stored.

As shown in FIG. 20 as an example, the semiconductor device which is one embodiment of the present invention can be used for the transistor of the electronic paper in this embodiment. Further, since the semiconductor device which is one embodiment of the present invention can be applied to the transistor in the display portion, for example, a driver circuit and a display portion can be provided over the same substrate.

In addition, since the electronic paper in this embodiment is used for a TFT channel formation layer or the like without separating the semiconductor film, the semiconductor film is used in a display device such as a display unit without intention in the manufacturing stage. It is also possible to release the charge accumulated in the outside. At this time, it is preferable that the resistivity of the semiconductor film be set to a value at which a plurality of semiconductor elements such as transistors are not connected to each other by the semiconductor layer and charges accumulated in a manufacturing stage can be released. In addition, in order to release charges accumulated in the display device to the outside, the resistance value of a part of the semiconductor film is lowered, and the semiconductor layer prevents a plurality of semiconductor elements such as transistors from conducting to each other. A process of increasing the resistance value of the part can also be performed.

Alternatively, the electronic paper can be used for electronic devices in various fields as long as they display information. For example, using electronic paper, electronic books (electronic books), posters,
It can be applied to in-car advertisements for vehicles such as trains and displays on various cards such as credit cards. An example of the electronic device is illustrated in FIG. FIG. 21 illustrates an example of an e-book reader 2700.

As illustrated in FIG. 21, the electronic book 2700 includes two housings, a housing 2701 and a housing 2703. The housing 2701 and the housing 2703 are integrated with a shaft portion 2711 and can be opened / closed using the shaft portion 2711 as an axis. With such a configuration, an operation like a paper book can be performed.

A display portion 2705 and a display portion 2707 are incorporated in the housing 2701 and the housing 2703, respectively. The display portion 2705 and the display portion 2707 may be configured to display a series of images or may be configured to display different images. By adopting a configuration in which different images are displayed, for example, a sentence can be displayed on the right display unit (display unit 2705 in FIG. 21) and an image can be displayed on the left display unit (display unit 2707 in FIG. 21). .

FIG. 21 illustrates an example in which the housing 2701 is provided with an operation unit and the like. For example, the housing 2
701 includes a power source 2721, operation keys 2723, a speaker 2725, and the like. Pages can be turned with the operation keys 2723. Note that a keyboard, a pointing device, or the like may be provided on the same surface as the display portion of the housing. In addition, external connection terminals (earphone terminal, USB terminal, or AC adapter and USB
A terminal that can be connected to various cables such as a cable), a recording medium insertion portion, and the like. Further, the e-book reader 2700 may have a structure having a function as an electronic dictionary.

Further, the e-book reader 2700 may have a configuration capable of transmitting and receiving information wirelessly. By radio
It is also possible to purchase desired book data from an electronic book server and download it.

Note that this embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 7)
In this embodiment, electronic devices each including the display device which is one embodiment of the present invention in a display portion will be described.

The display device which is one embodiment of the present invention can be applied to various electronic devices (including game machines). Examples of the electronic device include a television device (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device). ), Large game machines such as portable game machines, portable information terminals, sound reproducing devices, and pachinko machines.

FIG. 22A illustrates an example of a television device 9600. Television device 96
00 includes a display portion 9603 incorporated in a housing 9601. Images can be displayed on the display portion 9603. Further, here, a housing 9601 is provided by a stand 9605.
Indicates a supported configuration.

The television device 9600 can be operated with an operation switch provided in the housing 9601 or a separate remote controller 9610. Channels and volume can be operated with operation keys 9609 provided in the remote controller 9610, and an image displayed on the display portion 9603 can be operated. The remote controller 9610 may be provided with a display portion 9607 for displaying information output from the remote controller 9610.

Note that the television set 9600 is provided with a receiver, a modem, and the like. The receiver can receive general TV broadcasts, and can be connected one-way (sender to receiver) or two-way (sender to receiver) by connecting to a priority or wireless communication network via a modem. It is also possible to perform information communication between each other or between recipients).

FIG. 22B illustrates an example of a digital photo frame 9700. For example, a digital photo frame 9700 has a display portion 9703 incorporated in a housing 9701. The display portion 9703 can display various images. For example, by displaying image data captured by a digital camera or the like, the display portion 9703 can function in the same manner as a normal photo frame.

Note that the digital photo frame 9700 includes an operation unit, an external connection terminal (USB terminal, US
A terminal that can be connected to various cables such as a B cable), a recording medium insertion portion, and the like. These configurations may be incorporated on the same surface as the display portion, but it is preferable to provide them on the side surface or the back surface because the design is improved. For example, a memory that stores image data captured by a digital camera can be inserted into the recording medium insertion unit of the digital photo frame to capture the image data, and the captured image data can be displayed on the display unit 9703.

Further, the digital photo frame 9700 may be configured to transmit and receive information wirelessly. A configuration may be employed in which desired image data is captured and displayed wirelessly.

FIG. 23A illustrates a portable game machine including two housings, a housing 9881 and a housing 9891, which are connected with a joint portion 9893 so that the portable game machine can be opened or folded. Housing 988
1 includes a display portion 9882 and the housing 9891 includes a display portion 9883. Further, the portable game machine shown in FIG. 23A includes a speaker portion 9884 and a recording medium insertion portion 9.
886, LED lamp 9890, input means (operation key 9885, connection terminal 9887, sensor 9888 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, Including functions for measuring time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared)), microphone 9889)
Etc. Needless to say, the configuration of the portable game machine is not limited to the above-described configuration, and may be any configuration as long as it includes at least a display device. The portable game machine shown in FIG. 23A reads out a program or data recorded in a recording medium and displays the program or data on a display unit, or performs wireless communication with another portable game machine to share information. It has a function. Note that the function of the portable game machine illustrated in FIG. 23A is not limited to this, and the portable game machine can have a variety of functions.

FIG. 23B illustrates an example of a slot machine 9900 which is a large-sized game machine. In the slot machine 9900, a display portion 9903 is incorporated in a housing 9901. In addition, the slot machine 9900 includes operation means such as a start lever and a stop switch, a coin slot, a speaker, and the like. Needless to say, the configuration of the slot machine 9900 is not limited to that described above, and may be any configuration as long as it includes at least the display device according to the present invention.

FIG. 24A illustrates an example of a mobile phone 9000. The cellular phone 9000 includes a display portion 9002 incorporated in a housing 9001, operation buttons 9003, an external connection port 90, and the like.
04, a speaker 9005, a microphone 9006, and the like.

A cellular phone 9000 illustrated in FIG. 24A can input information by touching the display portion 9002 with a finger or the like. In addition, operations such as making a call or creating an e-mail can be performed by touching the display portion 9002 with a finger or the like.

There are mainly three screen modes of the display portion 9002. The first mode is a display mode mainly for displaying images, and the second mode is an input mode mainly for inputting information such as characters. The third mode is a display + input mode in which two modes of the display mode and the input mode are mixed.

For example, when making a call or creating a mail, the display unit 9002 may be set to a character input mode mainly for inputting characters and an operation for inputting characters displayed on the screen may be performed. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display portion 9002.

In addition, by providing a detection device having a sensor for detecting the inclination, such as a gyroscope or an acceleration sensor, in the mobile phone 9000, the orientation (vertical or horizontal) of the mobile phone 9000 is determined.
The screen display of the display portion 9002 can be automatically switched.

Further, the screen mode is switched by touching the display portion 9002 or operating the operation button 9003 of the housing 9001. Further, switching can be performed depending on the type of image displayed on the display portion 9002. For example, if the image signal to be displayed on the display unit is moving image data, the mode is switched to the display mode, and if it is text data, the mode is switched to the input mode.

Further, in the input mode, a signal detected by the optical sensor of the display unit 9002 is detected, and when there is no input by a touch operation of the display unit 9002 for a certain period, the screen mode is switched from the input mode to the display mode. You may control.

The display portion 9002 can also function as an image sensor. For example, the display unit 90
By touching 02 with a palm or a finger, an image of a palm print, a fingerprint, or the like can be captured to perform personal authentication. In addition, if a backlight that emits near-infrared light or a sensing light source that emits near-infrared light is used for the display portion, finger veins, palm veins, and the like can be imaged.

FIG. 24B is also an example of a mobile phone. A mobile phone in FIG. 24B includes a housing 9411, a display device 9410 including a display portion 9412 and operation buttons 9413, an operation button 9402, an external input terminal 9403, a microphone 9404, a speaker 9405, and the like. And a communication device 9400 including a light emitting unit 9406 that emits light when an incoming call is received. Therefore, the short axes of the display device 9410 and the communication device 9400 can be attached, or the long axes of the display device 9410 and the communication device 9400 can be attached. When only the display function is required, the display device 9410 can be detached from the communication device 9400 and the display device 9410 can be used alone. The communication device 9400 and the display device 9410 can exchange images or input information by wireless communication or wired communication, and each have a rechargeable battery.

As described above as an example, the display device which is one embodiment of the present invention can be applied to various electronic devices.

Note that this embodiment can be combined with any of the other embodiments as appropriate.

100 Substrate 101 Electrode 102 Insulating layer 103a Electrode 103b Electrode 104 Semiconductor layer 105a Buffer layer 105b Buffer layer 200 Substrate 201 Transistor 202 Transistor 204 Semiconductor layer 400 Substrate 402 Insulating layer 404 Semiconductor layer 405 Interlayer film 408 Partition layer 409 Electroluminescent layer 410 Conductive layer 411 Conductive layer 412 Shielding film 421 Transistor 422 Capacitor element 423 Transistor 424 Light emitting element 451 Transistor 452 Capacitor element 453 Transistor 454 Light emitting element 461 Scan line 462 Signal line 500 Substrate 502 Insulating layer 504 Semiconductor layer 505 Interlayer film 506 Conductive layer 507 Opening 508 Liquid crystal layer 509 Conductive layer 510 Substrate 511 Transistor 512 Liquid crystal element 513 Capacitance element 521 Scan line 522 Signal line 580 Substrate 581 TFT
582 Semiconductor layer 583 Insulating layer 584 Insulating layer 585 Insulating layer 586 Electrode 587 Electrode 588 Electrode 589 Spherical particle 594 Cavity 595 Filler 596 Substrate 601 Pixel portion 602 Scan line driver circuit 603 Signal line driver circuit 604 Pixel 610 Shift register 611 Level shifter 612 Buffer Circuit 621 Shift register 622 Latch circuit 623 Latch circuit 624 Level shifter 625 Buffer circuit 2012 Insulating layer 2111 Electrode 2112 Electrode 2131a Electrode 2131b Electrode 2132a Electrode 2132b Electrode 2600 TFT substrate 2601 Counter substrate 2602 Sealing material 2603 Pixel portion 2604 Display element 2605 Coloring layer 2606 Polarization Plate 2607 Polarizing plate 2608 Wiring circuit portion 2609 Flexible wiring board 2610 Cold cathode tube 2611 Reflecting plate 2612 Circuit board 2613 Diffusion plate 2700 Electronic book 2701 Case 2703 Case 2705 Display portion 2707 Display portion 2711 Shaft portion 2721 Power supply 2723 Operation key 2725 Speaker 4001 Base film 4011 Conductive layer 4012 Conductive layer 4021 Opening 4031 Conductive layer 4032 Conductive layer 4033 Conductive Layer 4034 conductive layer 4061 opening 4062 opening 4063 opening 4071 conductive layer 4072 conductive layer 4081 opening 5001 base film 5011 conductive layer 5012 conductive layer 5013 conductive layer 5014 conductive layer 5031 conductive layer 5032 conductive layer 5033 conductive layer 5062 conductive layer 5063 Conductive layer 590a Black region 590b White region 6000 Seal material 6001 Substrate 6002 Pixel portion 6003 Signal line driver circuit 6004 Scan line driver circuit 6005 Seal material 6006 Substrate 6008 Crystal layer 6010 TFT
6011 TFT
6013 Liquid crystal element 6015 Connection terminal electrode 6016 Terminal electrode 6018 FPC
6019 Anisotropic conductive film 6020 Insulating layer 6021 Insulating layer 6030 Pixel electrode 6031 Counter electrode 6032 Insulating layer 6035 Spacer 6050 Semiconductor layer 6501 Substrate 6502 Pixel portion 6503a Signal line driver circuit 6504a Scan line driver circuit 6518a FPC
6505 Sealing material 6506 Substrate 6507 Filling material 6509 TFT
6510 TFT
6511 Light-emitting element 6512 Electroluminescent layer 6513 Electrode 6515 Connection terminal electrode 6516 Connection terminal electrode 6517 Electrode 6519 Anisotropic conductive film 6520 Partition 6550 Semiconductor layer 6551 Insulation layer 6552 Insulation layer 9000 Mobile phone 9001 Case 9002 Display unit 9003 Operation button 9004 External Connection port 9005 Speaker 9006 Microphone 9400 Communication device 9401 Case 9402 Operation button 9403 External input terminal 9404 Microphone 9405 Speaker 9406 Light emitting portion 9410 Display device 9411 Case 9412 Display portion 9413 Operation button 9600 Television device 9601 Case 9603 Display portion 9605 Stand 9607 Display portion 9609 Operation key 9610 Remote controller 9700 Digital photo frame 9701 Housing 9703 Display portion 9881 Housing 9882 Display unit 9883 Display unit 9884 Speaker unit 9985 Operation key 9886 Recording medium insertion unit 9886 Connection terminal 9888 Sensor 9890 Microphone 9890 LED lamp 9891 Housing 9893 Connection unit 9900 Slot machine 9901 Housing 9903 Display unit

Claims (1)

Forming a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer on a substrate;
Forming a first insulating layer on the substrate, the first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer;
Forming a fifth conductive layer, a sixth conductive layer, and a seventh conductive layer on the first insulating layer;
Forming an oxide semiconductor layer over the first insulating layer, the fifth conductive layer, the sixth conductive layer, and the seventh conductive layer;
Forming a second insulating layer on the oxide semiconductor layer;
A method for manufacturing a semiconductor device, comprising: forming an eighth conductive layer, a ninth conductive layer, and a tenth conductive layer on the second insulating layer;
The fifth conductive layer has a region overlapping with the first conductive layer,
The sixth conductive layer has a region overlapping with the first conductive layer and a region overlapping with the second conductive layer,
The seventh conductive layer is electrically connected to the fourth conductive layer through a first opening provided in the first insulating layer,
The eighth conductive layer is electrically connected to the sixth conductive layer through a second opening provided in the oxide semiconductor layer and a third opening provided in the second insulating layer. Connected to
The ninth conductive layer is electrically connected to the third conductive layer through a fourth opening provided in the oxide semiconductor layer and a fifth opening provided in the second insulating layer. Connected to
The tenth conductive layer is electrically connected to the seventh conductive layer through a sixth opening provided in the oxide semiconductor layer and a seventh opening provided in the second insulating layer. Connected to
The method for manufacturing a semiconductor device in which the first conductive layer functions as a gate electrode of a transistor.

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