JP2016011901A - Pressure detection device - Google Patents

Pressure detection device Download PDF

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JP2016011901A
JP2016011901A JP2014133850A JP2014133850A JP2016011901A JP 2016011901 A JP2016011901 A JP 2016011901A JP 2014133850 A JP2014133850 A JP 2014133850A JP 2014133850 A JP2014133850 A JP 2014133850A JP 2016011901 A JP2016011901 A JP 2016011901A
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pressure sensor
resin portion
semiconductor pressure
resin
fluid inflow
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恵宏 上村
Yoshihiro Kamimura
恵宏 上村
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Nippon Seiki Co Ltd
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Nippon Seiki Co Ltd
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Priority to JP2014133850A priority Critical patent/JP2016011901A/en
Priority to PCT/JP2015/066706 priority patent/WO2016002448A1/en
Publication of JP2016011901A publication Critical patent/JP2016011901A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a pressure detection device having a simplified structure and allowing reduction in manufacturing cost.SOLUTION: The pressure detection device comprises: a semiconductor pressure sensor 20; a fluid inflow member 10 including a flow channel 11 through which fluid flows into the semiconductor pressure sensor 20; a first resin part 31 provided on the fluid inflow member 10 so as to surround the semiconductor pressure sensor 20; a lead terminal 32 having one end electrically connected to the semiconductor pressure sensor 20 and held by the first resin part 31 and the other end that is exposed; a second resin part 41 provided on the first resin part 31 and the fluid inflow member 10; and a lid member 50 covering the semiconductor pressure sensor 20, coupled to the first resin part 31 or the second resin part 41, and forming an airtight space of the semiconductor pressure sensor 20.

Description

本発明は、圧力検出装置に関する。   The present invention relates to a pressure detection device.

従来の圧力検出装置は、流体の圧力を導入する圧力導入部上にベース板を介して配設される半導体式圧力センサを有する。前記半導体式圧力センサを配設する収納用孔部を備えるとともに前記半導体式圧力センサとワイヤボンディングによるワイヤによって電気的に接続される回路基板を有する。前記圧力導入部と一体もしくは別体に設けられ前記回路基板を配設する配設部を有するものであった（例えば、特許文献１参照）。   A conventional pressure detecting device has a semiconductor pressure sensor disposed on a pressure introducing portion for introducing a fluid pressure via a base plate. The circuit board includes a housing hole in which the semiconductor pressure sensor is disposed and is electrically connected to the semiconductor pressure sensor by a wire by wire bonding. It has an arrangement part that is provided integrally or separately from the pressure introduction part and that arranges the circuit board (for example, see Patent Document 1).

特開２００２−２５７６６３号公報JP 2002-257663 A

しかしながら、従来の圧力検出装置は、前記回路基板が必要であるため、構造が複雑になり、また、前記回路基板におけるワイヤの接続箇所にはＡｕ（金）パッドが必要となり、コストアップとなるといった問題点を有していた。   However, since the conventional pressure detection device requires the circuit board, the structure is complicated, and an Au (gold) pad is required at the connection point of the wire on the circuit board, which increases costs. Had problems.

そこで本発明は、前記問題点を解消し、構造を簡素化し製造コストを抑えることが可能な圧力検出装置を提供することを目的とする。   Accordingly, an object of the present invention is to provide a pressure detection device that can solve the above-described problems, simplify the structure, and reduce the manufacturing cost.

本発明の圧力検出装置は、半導体式圧力センサと、前記半導体式圧力センサに流体を流入可能な流路を有する流体流入部材と、前記半導体式圧力センサを取り囲むように前記流体流入部材に設けられる第１樹脂部と、一端部が前記半導体式圧力センサと電気的に接続されるとともに前記第１樹脂部に保持されるリード端子と、前記リード端子の他端部が露出するとともに前記第１樹脂部及び前記流体流入部材に設けられる第２樹脂部と、前記半導体式圧力センサと前記リード端子の一端部とを接続するワイヤと、前記半導体式圧力センサを覆うとともに前記第１樹脂部または前記第２樹脂部に結合され前記半導体式圧力センサの気密空間を形成する蓋部材と、を備えたものである。   The pressure detection device of the present invention is provided on the fluid inflow member so as to surround the semiconductor pressure sensor, a fluid inflow member having a flow path capable of allowing fluid to flow into the semiconductor pressure sensor, and the semiconductor pressure sensor. A first resin part, one end part of which is electrically connected to the semiconductor pressure sensor and held by the first resin part, and the other end part of the lead terminal is exposed and the first resin part is exposed. And the second resin part provided in the fluid inflow member, a wire connecting the semiconductor pressure sensor and one end of the lead terminal, and the first resin part or the first And a lid member coupled to the resin portion to form an airtight space of the semiconductor pressure sensor.

以上の構成によって、本発明は、所期の目的を達成することができ、構造を簡素化し製造コストを抑えることが可能な圧力検出装置を提供することができる。   With the above configuration, the present invention can achieve the intended purpose, and can provide a pressure detection device that can simplify the structure and suppress the manufacturing cost.

本発明の第１実施形態の上面図。1 is a top view of a first embodiment of the present invention. 図１中ＩＩ−ＩＩ線の断面図。Sectional drawing of the II-II line in FIG. 同実施形態の圧力検出装置の上面図。The top view of the pressure detection apparatus of the embodiment. 図３中ＩＶ−ＩＶ線の断面図。Sectional drawing of the IV-IV line in FIG. 同実施形態の圧力検出装置の組立工程を説明する上面図。The top view explaining the assembly process of the pressure detection apparatus of the embodiment. 同実施形態の圧力検出装置の組立工程を説明する断面図。Sectional drawing explaining the assembly process of the pressure detection apparatus of the embodiment.

以下、添付図面を用いて本発明の第１実施形態の圧力検出装置１０１を説明する。   Hereinafter, the pressure detection apparatus 101 of 1st Embodiment of this invention is demonstrated using an accompanying drawing.

本実施形態による圧力検出装置１０１は、モジュールユニット１０２と組み合わせることによって、圧力検出ユニット１００を構成している。   The pressure detection device 101 according to the present embodiment constitutes a pressure detection unit 100 by being combined with the module unit 102.

圧力検出装置１０１は、流体流入部材１０と、半導体式圧力センサ（以下、単に、圧力センサという）２０と、端子ユニット３０と、ベース板ユニット４０と、蓋部材５０と、を備える。   The pressure detection device 101 includes a fluid inflow member 10, a semiconductor pressure sensor (hereinafter simply referred to as a pressure sensor) 20, a terminal unit 30, a base plate unit 40, and a lid member 50.

流体流入部材１０は、ステンレス鋼（ＳＵＳ）等の金属材料からなり、ほぼ円板形状であり、周辺の一部を直線状に切り欠いた切り欠き部１０ｃを備えている。流体流入部材１０は、その中央部分に、図４中上側に突出した凸形状の台座１０ａと、その下側に凹部１０ｂを備えている。   The fluid inflow member 10 is made of a metal material such as stainless steel (SUS), has a substantially disc shape, and includes a notch portion 10c in which a part of the periphery is cut out linearly. The fluid inflow member 10 is provided with a convex pedestal 10a protruding upward in FIG. 4 at a central portion and a concave portion 10b on the lower side thereof.

また、流体流入部材１０は、その中央部分に、上下方向に貫通する孔部である流路１１が形成されている。   Further, the fluid inflow member 10 is formed with a flow path 11 which is a hole penetrating in the vertical direction at the center portion thereof.

台座１０ａには、圧力センサ２０が載置され、熱硬化接着剤や半田等の所定の方法で固定されている。流路１１は、その下側から流体（例えば、油）が圧力センサ２０に流入可能となっている。また、凹部１０ｂにパッキン等のシール部材６０がはめ込まれており、流路１１の気密性を備えている。   The pressure sensor 20 is placed on the base 10a and fixed by a predetermined method such as a thermosetting adhesive or solder. In the flow path 11, fluid (for example, oil) can flow into the pressure sensor 20 from below. In addition, a seal member 60 such as packing is fitted in the recess 10 b and the airtightness of the flow path 11 is provided.

圧力センサ２０は、例えば、ガラス台座２１上に、シリコン等の半導体基板２２を薄肉に形成してなるダイアフラムを有する半導体チップを配設してなるものである。前記ダイアフラムに対応する部位には、ボロン等の不純物が拡散処理されていることでピエゾ抵抗効果を有する感圧素子となる４つの抵抗が形成され、各抵抗とアルミ等の導電性材料を用いた配線パターンとによりブリッジ回路が構成される。 圧力センサ２０は、流路１１から導き入れた流体の圧力を前記ダイアフラムによって受け、前記ダイアフラムの変位に伴うブリッジ回路の出力電圧によって流体の圧力を検出するものである。   The pressure sensor 20 includes, for example, a semiconductor chip having a diaphragm formed by thinly forming a semiconductor substrate 22 such as silicon on a glass pedestal 21. In the portion corresponding to the diaphragm, four resistors that become pressure-sensitive elements having a piezoresistance effect are formed by diffusing impurities such as boron, and each resistor and a conductive material such as aluminum are used. A bridge circuit is configured by the wiring pattern. The pressure sensor 20 receives the pressure of the fluid introduced from the flow path 11 by the diaphragm, and detects the pressure of the fluid by the output voltage of the bridge circuit according to the displacement of the diaphragm.

端子ユニット３０は、第１樹脂部３１と、リード端子３２とで構成されている。   The terminal unit 30 includes a first resin portion 31 and lead terminals 32.

第１樹脂部３１は、合成樹脂、例えば、ＰＰＳ（Poly Phenylene Sulfide）樹脂からなる。第１樹脂部３１は、インサート成形後にリード端子３２界面と気密性を保持させるために、流動性の良い材料を用いている。第１樹脂部３１は、圧力センサ２０を取り囲むように形成された環状であり、流体流入部材１０と当接し、流体流入部材１０を配置するための配設部３１ａが設けられている。配設部３１ａは、図６に示すように、第１樹脂部３１の下側の面に設けられている。また、配設部３１ａの外周側には、断面形状が窪んだ凹部３１ｂが設けられている。この凹部３１ｂは、環状に設けられている。この凹部３１ｂには、第１樹脂部３１と第２樹脂部４１との密着性を確保する突起３１ｃが設けられている。この突起３１ｃは、断面形状が三角形状であり、第２樹脂部４１を成型する際に、突起３１ｃの先端部分が第２樹脂部４１の熱で溶けることによって、第１樹脂部３１に第２樹脂部４１との密着性を確保するものである。また、第１樹脂部３１は、リード端子３２の一部を内蔵している。   The 1st resin part 31 consists of synthetic resins, for example, PPS (Poly Phenylene Sulfide) resin. The first resin portion 31 uses a material with good fluidity in order to maintain airtightness with the interface of the lead terminal 32 after insert molding. The first resin portion 31 has an annular shape formed so as to surround the pressure sensor 20, and is provided with an arrangement portion 31 a for contacting the fluid inflow member 10 and for arranging the fluid inflow member 10. As shown in FIG. 6, the arrangement portion 31 a is provided on the lower surface of the first resin portion 31. Moreover, the recessed part 31b with which the cross-sectional shape recessed was provided in the outer peripheral side of the arrangement | positioning part 31a. The recess 31b is provided in an annular shape. The recess 31 b is provided with a protrusion 31 c that ensures adhesion between the first resin portion 31 and the second resin portion 41. The protrusion 31 c has a triangular cross-sectional shape, and when the second resin portion 41 is molded, the tip portion of the protrusion 31 c is melted by the heat of the second resin portion 41, so that the second resin portion 41 has a second shape. The adhesiveness with the resin part 41 is ensured. Further, the first resin portion 31 incorporates a part of the lead terminal 32.

リード端子３２は、例えば、リン青銅材料からなり、その表面には、ニッケルメッキが施されている。リード端子３２は、図５に示すように、３つあり、これらは、それぞれ電源用ライン、信号用ライン、グランド用ラインである。   The lead terminal 32 is made of, for example, a phosphor bronze material, and the surface thereof is plated with nickel. As shown in FIG. 5, there are three lead terminals 32, which are a power line, a signal line, and a ground line, respectively.

リード端子３２の一端部は、圧力センサ２０の近傍に位置し、他端部は、第１樹脂部３１の外側まで引き出されている。そして、リード端子３２の一端部が、ワイヤＷによって、圧力センサ２０と電気的に接続されるとともに、他端部が、流体流入部材１０の流路１１に対して直交する方向に引き出されて、後述するモジュールユニット１０２のフレームに電気的に接続される。   One end portion of the lead terminal 32 is located in the vicinity of the pressure sensor 20, and the other end portion is drawn to the outside of the first resin portion 31. And while one end part of lead terminal 32 is electrically connected with pressure sensor 20 by wire W, the other end part is pulled out in the direction orthogonal to channel 11 of fluid inflow member 10, It is electrically connected to the frame of the module unit 102 described later.

また、リード端子３２の表面に、ニッケルメッキが施されたことにより、ワイヤボンディングによるワイヤＷの接続信頼性を高めてある。   Further, since the surface of the lead terminal 32 is plated with nickel, the connection reliability of the wire W by wire bonding is enhanced.

また、リード端子３２は、第１樹脂部３１のインサート成形時において、電源用、出力用およびグランド用の複数のリード端子３２が、連結部３２ａによって連結されて、一体であり、第１樹脂部３１のインサート成形後に、連結部３２ａを切断することで、リード端子３２を独立させるとともに、圧力センサ２０と接続するワイヤ接続部３２ｂとなる。   In addition, the lead terminal 32 is integrally formed by connecting a plurality of lead terminals 32 for power supply, output, and ground by connecting portions 32a at the time of insert molding of the first resin portion 31. By cutting the connecting portion 32 a after the insert molding 31, the lead terminal 32 is made independent, and the wire connecting portion 32 b is connected to the pressure sensor 20.

また、リード端子３２は、その表面に微細な凹凸を備えている。特に、この微細な凹凸は、リード端子３２と第１樹脂部３１とを接着剤などを用いずに気密性を確保し接合するものであり、少なくともリード端子３２の第１樹脂部３１との接触部分に設ければよい。この微細な凹凸は、薬品によってエッチングすることによって、形成するものである。   The lead terminal 32 has fine irregularities on its surface. In particular, the fine irregularities ensure the airtightness and join the lead terminal 32 and the first resin part 31 without using an adhesive or the like, and at least contact the first resin part 31 of the lead terminal 32. What is necessary is just to provide in a part. These fine irregularities are formed by etching with chemicals.

ベース板ユニット４０は、第２樹脂部４１と、端子ユニット３０と、流体流入部材１０とで構成されている。ベース板ユニット４０は、金型内に、端子ユニット３０と流体流入部材１０とをセットし、その後、成型によって、第２樹脂部４１を形成するものである。ベース板ユニット４０は、リード端子３２の他端部が、流体流入部材１０の流路１１に対して直交する方向に引き出されている。また、リード端子３２の他端部と圧力センサ２０が、露出している。   The base plate unit 40 includes the second resin portion 41, the terminal unit 30, and the fluid inflow member 10. The base plate unit 40 sets the terminal unit 30 and the fluid inflow member 10 in a mold, and then forms the second resin portion 41 by molding. In the base plate unit 40, the other end of the lead terminal 32 is pulled out in a direction orthogonal to the flow path 11 of the fluid inflow member 10. Further, the other end of the lead terminal 32 and the pressure sensor 20 are exposed.

第２樹脂部４１は、合成樹脂、例えば、ＰＰＳ樹脂からなる。第２樹脂部４１は、流体流入部材１０及び端子ユニット３０並びに第２樹脂部４１と気密性を保持させるために、流動性の良い材料を用いる。第２樹脂部４１は、圧力センサ２０を取り囲むように形成された環状である。   The 2nd resin part 41 consists of synthetic resins, for example, PPS resin. The second resin portion 41 uses a material with good fluidity in order to maintain airtightness with the fluid inflow member 10, the terminal unit 30, and the second resin portion 41. The second resin portion 41 is an annular shape formed so as to surround the pressure sensor 20.

また、流体流入部材１０は、その表面に微細な凹凸を備えている。特に、この微細な凹凸は、流体流入部材１０と第２樹脂部４１とを接着剤などを用いずに気密性を確保し接合するものであり、少なくとも流体流入部材１０の第２樹脂部４１との接触部分に設ければよい。この微細な凹凸は、薬品によってエッチングすることによって、形成するものである。   Further, the fluid inflow member 10 has fine irregularities on the surface thereof. In particular, the fine unevenness secures airtightness and joins the fluid inflow member 10 and the second resin portion 41 without using an adhesive or the like, and at least the second resin portion 41 of the fluid inflow member 10 and The contact portion may be provided. These fine irregularities are formed by etching with chemicals.

蓋部材５０は、合成樹脂、例えば、ＰＰＳ樹脂からなる。圧力センサ２０を上側から覆うように第１樹脂部３１の平坦部３１ｂに、例えば、レーザー溶着によって結合され、圧力センサ２０が内部に位置する密閉空間を形成する部材である。また、蓋部材５０の内面は、凹んだ曲面形状をなしており、蓋部材５０と第１樹脂部３１との間には密閉空間となる圧力基準室Ｂが形成される。 なお、本実施形態では、蓋部材５０は、第１樹脂部３１に結合されているが、本実施形態に限定されるものではなく、第２樹脂部４１に結合するものであってもよい。   The lid member 50 is made of a synthetic resin, for example, a PPS resin. It is a member that is coupled to the flat portion 31b of the first resin portion 31 so as to cover the pressure sensor 20 from above, for example, by laser welding, and forms a sealed space in which the pressure sensor 20 is located. Further, the inner surface of the lid member 50 has a concave curved shape, and a pressure reference chamber B serving as a sealed space is formed between the lid member 50 and the first resin portion 31. In the present embodiment, the lid member 50 is coupled to the first resin portion 31, but is not limited to the present embodiment, and may be coupled to the second resin portion 41.

以上の各部によって、圧力検出装置１０１が構成される。   The pressure detection device 101 is configured by the above-described units.

次に、モジュールユニット１０２について説明する。モジュールユニット１０２は、樹脂製ベース板２００と、リードフレーム２０１と、コネクタ部２０２と、金属製ベース板２０３とから構成されている。   Next, the module unit 102 will be described. The module unit 102 includes a resin base plate 200, a lead frame 201, a connector portion 202, and a metal base plate 203.

樹脂製ベース板２００は、合成樹脂、例えば、ＰＰＳ材からなるものであり、本実施形態では、ほぼ矩形状である。樹脂製ベース板２００の背面、図２中下側には、圧力検出装置１０１を収納するセンサ配置部２００ａと、樹脂製ベース板２００の周辺の一部に、外部機器である車両ＥＣＵ等の制御機器と接続するコネクタ部２０２と、を備えている。また、樹脂製ベース板２００には、リードフレーム２０１が内蔵されている。なお、本実施形態では、図示していないが、車両などに取り付ける取付部を備えている。   The resin base plate 200 is made of a synthetic resin, for example, a PPS material, and has a substantially rectangular shape in this embodiment. On the rear surface of the resin base plate 200, the lower side in FIG. 2 is a sensor placement unit 200a that houses the pressure detection device 101, and a part of the periphery of the resin base plate 200 is controlled by a vehicle ECU that is an external device. And a connector portion 202 connected to the device. The resin base plate 200 has a lead frame 201 built therein. In the present embodiment, although not shown, an attachment portion that is attached to a vehicle or the like is provided.

リードフレーム２０１は、例えば、リン青銅からなるものであり、一端が、センサ配置部２００ａに露出し、圧力検出装置１０１のリード端子３２の他端部と抵抗溶接等により接続され、コネクタ部２０２に引き出し配線される。また、リードフレーム２０１は、その一部に、コンデンサ等の電子部品２０４が実装され、耐ノイズ性能を向上させている。   The lead frame 201 is made of, for example, phosphor bronze. One end of the lead frame 201 is exposed to the sensor placement unit 200a and connected to the other end of the lead terminal 32 of the pressure detection device 101 by resistance welding or the like. Drawer wiring. In addition, the lead frame 201 has an electronic component 204 such as a capacitor mounted on a part thereof to improve noise resistance.

コネクタ部２０２は、リードフレーム２０１の端部が露出するとともに、図示しないメス型コネクタが装着可能である。   The connector 202 can be mounted with a female connector (not shown) while the end of the lead frame 201 is exposed.

金属製ベース板２０３は、例えば、冷間圧延鋼板などからなり、樹脂製ベース板２００から露出する圧力検出装置１０１を覆い、モジュールユニット１０２の剛性を補うものである。   The metal base plate 203 is made of, for example, a cold rolled steel plate or the like, covers the pressure detection device 101 exposed from the resin base plate 200, and compensates for the rigidity of the module unit 102.

以上の各部によって、モジュールユニット１０２が構成される。   The module unit 102 is configured by the above units.

以上、半導体式圧力センサ２０と、半導体式圧力センサ２０に流体を流入可能な流路１１を有する流体流入部材１０と、半導体式圧力センサ２０を取り囲むように流体流入部材１０に設けられる第１樹脂部３１と、一端部が半導体式圧力センサ２０と電気的に接続されるとともに第１樹脂部３１に保持されるリード端子３２と、リード端子３２の他端部が露出するとともに第１樹脂部３１及び流体流入部材１０に設けられる第２樹脂部４１と、半導体式圧力センサ２０を覆うとともに第１樹脂部３１または第２樹脂部４１に結合され半導体式圧力センサ２０の気密空間を形成する蓋部材５０と、を備えたことにより、従来必要であった回路基板を不要とすることができ、構造を簡素化し製造コストを低く抑えることが可能となる。   As described above, the semiconductor pressure sensor 20, the fluid inlet member 10 having the flow path 11 through which the fluid can flow into the semiconductor pressure sensor 20, and the first resin provided in the fluid inlet member 10 so as to surround the semiconductor pressure sensor 20. Part 31, one end of which is electrically connected to semiconductor pressure sensor 20, lead terminal 32 held by first resin part 31, and the other end of lead terminal 32 is exposed and first resin part 31 And the second resin portion 41 provided in the fluid inflow member 10 and the lid member that covers the semiconductor pressure sensor 20 and is coupled to the first resin portion 31 or the second resin portion 41 to form an airtight space of the semiconductor pressure sensor 20. 50, the circuit board that has been conventionally required can be eliminated, the structure can be simplified, and the manufacturing cost can be kept low.

また、リード端子３２は、少なくとも第１樹脂部３１との接触部分に微細な凹凸を設けたことにより、気密性を確保するための封止部材であるパッキンや、このパッキンを圧縮するための部品や構造が不要となり、製造工程を簡素化できる。   In addition, the lead terminal 32 is provided with a fine unevenness at least at the contact portion with the first resin portion 31, so that a packing as a sealing member for ensuring airtightness, and a component for compressing the packing And the structure becomes unnecessary, and the manufacturing process can be simplified.

また、流体流入部材１０は、少なくとも第２樹脂部４１との接触部分に微細な凹凸を設けたことにより、気密性を確保するための封止部材であるパッキンや、このパッキンを圧縮するための部品や構造が不要となり、製造工程を簡素化できる。   Further, the fluid inflow member 10 is provided with a fine unevenness at least at a contact portion with the second resin portion 41, so that a packing as a sealing member for ensuring airtightness, and a compression for compressing the packing Parts and structures are no longer necessary, and the manufacturing process can be simplified.

また、第１樹脂部３１に第２樹脂部４１との密着性を確保する突起３１ｃを設けたことにより、気密性を確保するための封止部材であるパッキンや、このパッキンを圧縮するための部品や構造が不要となり、製造工程を簡素化できる。   Further, by providing the first resin portion 31 with the protrusion 31c that secures the adhesion with the second resin portion 41, a packing that is a sealing member for securing airtightness, and for compressing the packing Parts and structures are no longer necessary, and the manufacturing process can be simplified.

本発明は、半導体式圧力センサを内蔵する圧力検出装置に利用可能である。   The present invention can be used for a pressure detection device incorporating a semiconductor pressure sensor.

１０ 流体流入部材
２０ 半導体式圧力センサ（圧力センサ）
３１ 第１樹脂部
３１ｃ 突起
３２ リード端子
４１ 第２樹脂部
５０ 蓋部材
Ｂ 圧力基準室（密閉空間）
Ｗ ワイヤ

10 Fluid Inflow Member 20 Semiconductor Pressure Sensor (Pressure Sensor)
31 1st resin part 31c Protrusion 32 Lead terminal 41 2nd resin part 50 Lid member B Pressure reference chamber (sealed space)
W wire

Claims (4)

半導体式圧力センサと、前記半導体式圧力センサに流体を流入可能な流路を有する流体流入部材と、前記半導体式圧力センサを取り囲むように前記流体流入部材に設けられる第１樹脂部と、一端部が前記半導体式圧力センサと電気的に接続されるとともに前記第１樹脂部に保持されるリード端子と、前記リード端子の他端部が露出するとともに前記第１樹脂部及び前記流体流入部材に設けられる第２樹脂部と、前記半導体式圧力センサと前記リード端子の一端部とを接続するワイヤと、前記半導体式圧力センサを覆うとともに前記第１樹脂部または前記第２樹脂部に結合され前記半導体式圧力センサの気密空間を形成する蓋部材と、を備えたことを特徴とする圧力検出装置。 A semiconductor pressure sensor; a fluid inflow member having a flow path through which fluid can flow into the semiconductor pressure sensor; a first resin portion provided in the fluid inflow member so as to surround the semiconductor pressure sensor; and one end portion Is electrically connected to the semiconductor pressure sensor and is held by the first resin portion, and the other end of the lead terminal is exposed and provided in the first resin portion and the fluid inflow member. A second resin portion, a wire connecting the semiconductor pressure sensor and one end of the lead terminal, and the semiconductor pressure sensor covering the semiconductor pressure sensor and coupled to the first resin portion or the second resin portion. And a lid member that forms an airtight space of the pressure sensor. 前記リード端子は、少なくとも前記第１樹脂部との接触部分に微細な凹凸を設けたことを特徴とする請求項１に記載の圧力検出装置。 The pressure detection device according to claim 1, wherein the lead terminal is provided with fine unevenness at least in a contact portion with the first resin portion. 前記流体流入部材は、少なくとも前記第２樹脂部との接触部分に微細な凹凸を設けたことを特徴とする請求項２に記載の圧力検出装置。 The pressure detection device according to claim 2, wherein the fluid inflow member is provided with fine irregularities at least in a contact portion with the second resin portion. 前記第１樹脂部に前記第２樹脂部との密着性を確保する突起を設けたことを特徴とする請求項１から３のいずれかに記載の圧力検出装置。

The pressure detection device according to any one of claims 1 to 3, wherein the first resin portion is provided with a protrusion that ensures adhesion with the second resin portion.

JP2014133850A 2014-06-30 2014-06-30 Pressure detection device Pending JP2016011901A (en)

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JPH06241931A (en) * 1993-02-23 1994-09-02 Matsushita Electric Works Ltd Semiconductor pressure sensor
JP3081179B2 (en) * 1997-12-01 2000-08-28 北陸電気工業株式会社 Pressure sensor and method of manufacturing the same
JP2005055313A (en) * 2003-08-05 2005-03-03 Mitsubishi Electric Corp Semiconductor pressure sensor apparatus
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