JP2016004985A - 基板処理システム、仕切弁及び基板搬送方法 - Google Patents
基板処理システム、仕切弁及び基板搬送方法 Download PDFInfo
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- JP2016004985A JP2016004985A JP2014126557A JP2014126557A JP2016004985A JP 2016004985 A JP2016004985 A JP 2016004985A JP 2014126557 A JP2014126557 A JP 2014126557A JP 2014126557 A JP2014126557 A JP 2014126557A JP 2016004985 A JP2016004985 A JP 2016004985A
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- Prior art keywords
- substrate
- transfer
- wafer
- gate valve
- processing system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
- H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
12 トランスファモジュール
16 搬送アーム
17 プロセスモジュール
23 ゲートバルブ
26 ウエハ保持フレーム
Claims (6)
- 隣接して配置される少なくとも2つの搬送室と、前記少なくとも2つの搬送室の各々に接続された少なくとも1つの処理室とを備え、前記少なくとも2つの搬送室の各々は基板を搬送する搬送機構を有し、前記少なくとも1つの処理室は基板に処理を施す基板処理システムにおいて、
前記少なくとも2つの搬送室を連結する連結路に進退自在であり、前記少なくとも2つの搬送室の間を仕切る仕切弁と、
前記仕切弁に取り付けられ、前記基板を保持する基板保持機構とを備えることを特徴とする基板処理システム。 - 前記基板保持機構は前記基板を支持することを特徴とする請求項1記載の基板処理システム。
- 前記基板保持機構は前記基板を釣支することを特徴とする請求項1記載の基板処理システム。
- 前記基板保持機構は、前記基板保持機構の移動可能範囲に進入した前記搬送機構を回避する回避位置、前記搬送機構から前記基板を受け取り又は前記搬送機構へ基板を渡す受渡位置、及び前記仕切弁が前記連結路を閉鎖する閉鎖位置へ移動可能であることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理システム。
- 隣接して配置される少なくとも2つの搬送室と、前記少なくとも2つの搬送室の各々に接続された少なくとも1つの処理室とを有し、前記少なくとも2つの搬送室の各々は基板を搬送する搬送機構を有し、前記少なくとも1つの処理室は基板に処理を施す基板処理システムにおいて、前記少なくとも2つの搬送室を連結する連結路に進退自在であり、前記少なくとも2つの搬送室の間を仕切る仕切弁であって、
前記基板を保持する基板保持機構を備えることを特徴とする仕切弁。 - 隣接して配置される少なくとも2つの搬送室と、前記少なくとも2つの搬送室の各々に接続された少なくとも1つの処理室とを備え、前記少なくとも2つの搬送室の各々は基板を搬送する搬送機構を有し、前記少なくとも1つの処理室は基板に処理を施す基板処理システムにおける基板搬送方法であって、
前記少なくとも2つの搬送室を連結する連結路に進退自在であり、且つ前記少なくとも2つの搬送室の間を仕切る仕切弁に前記基板を保持する基板保持機構を設け、
一の前記搬送室及び他の前記搬送室の間で前記基板を搬送する際、前記仕切弁の前記連結路への進退による前記基板保持機構の移動と、前記搬送機構の動作とを連動させることを特徴とする基板搬送方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014126557A JP6430156B2 (ja) | 2014-06-19 | 2014-06-19 | 基板処理システム、仕切弁及び基板搬送方法 |
US14/735,216 US20150371812A1 (en) | 2014-06-19 | 2015-06-10 | Substrate Processing System, Gate Valve and Substrate Transfer Method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014126557A JP6430156B2 (ja) | 2014-06-19 | 2014-06-19 | 基板処理システム、仕切弁及び基板搬送方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016004985A true JP2016004985A (ja) | 2016-01-12 |
JP6430156B2 JP6430156B2 (ja) | 2018-11-28 |
Family
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JP2014126557A Active JP6430156B2 (ja) | 2014-06-19 | 2014-06-19 | 基板処理システム、仕切弁及び基板搬送方法 |
Country Status (2)
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US (1) | US20150371812A1 (ja) |
JP (1) | JP6430156B2 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242234A (ja) * | 1997-02-26 | 1998-09-11 | Fujitsu Ltd | 製造装置 |
JPH11176813A (ja) * | 1997-12-12 | 1999-07-02 | Nec Kyushu Ltd | ドライエッチング装置 |
JP2001144162A (ja) * | 2000-09-18 | 2001-05-25 | Hitachi Ltd | 真空処理装置及び方法 |
JP2007149973A (ja) * | 2005-11-28 | 2007-06-14 | Tokyo Electron Ltd | 基板処理装置 |
WO2012108439A1 (ja) * | 2011-02-08 | 2012-08-16 | 東京エレクトロン株式会社 | 基板中継装置,基板中継方法,基板処理装置 |
-
2014
- 2014-06-19 JP JP2014126557A patent/JP6430156B2/ja active Active
-
2015
- 2015-06-10 US US14/735,216 patent/US20150371812A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242234A (ja) * | 1997-02-26 | 1998-09-11 | Fujitsu Ltd | 製造装置 |
US6186722B1 (en) * | 1997-02-26 | 2001-02-13 | Fujitsu Limited | Chamber apparatus for processing semiconductor devices |
JPH11176813A (ja) * | 1997-12-12 | 1999-07-02 | Nec Kyushu Ltd | ドライエッチング装置 |
JP2001144162A (ja) * | 2000-09-18 | 2001-05-25 | Hitachi Ltd | 真空処理装置及び方法 |
JP2007149973A (ja) * | 2005-11-28 | 2007-06-14 | Tokyo Electron Ltd | 基板処理装置 |
WO2012108439A1 (ja) * | 2011-02-08 | 2012-08-16 | 東京エレクトロン株式会社 | 基板中継装置,基板中継方法,基板処理装置 |
US20130309047A1 (en) * | 2011-02-08 | 2013-11-21 | Tokyo Electron Limited | Substrate relay apparatus, substrate relay method, and substrate processing apparatus |
Also Published As
Publication number | Publication date |
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JP6430156B2 (ja) | 2018-11-28 |
US20150371812A1 (en) | 2015-12-24 |
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