JP2016001738A5 - - Google Patents
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- JP2016001738A5 JP2016001738A5 JP2015126714A JP2015126714A JP2016001738A5 JP 2016001738 A5 JP2016001738 A5 JP 2016001738A5 JP 2015126714 A JP2015126714 A JP 2015126714A JP 2015126714 A JP2015126714 A JP 2015126714A JP 2016001738 A5 JP2016001738 A5 JP 2016001738A5
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- JP
- Japan
- Prior art keywords
- gallium nitride
- standing substrate
- free
- single crystal
- nitride free
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 39
- 239000000758 substrate Substances 0.000 claims 30
- 239000002245 particle Substances 0.000 claims 14
- 239000010410 layer Substances 0.000 claims 7
- 239000002346 layers by function Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000002019 doping agent Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 238000007716 flux method Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 1
Claims (24)
該基板上に形成され、略法線方向に単結晶構造を有する複数の半導体単結晶粒子で構成される層を一以上有する発光機能層と、
を備えた、発光素子。 A gallium nitride free-standing substrate according to any one of claims 1 to 12 ,
A light emitting functional layer formed on the substrate and having at least one layer composed of a plurality of semiconductor single crystal particles having a single crystal structure in a substantially normal direction;
A light emitting device comprising:
前記配向多結晶焼結体上に、窒化ガリウムからなる種結晶層を、前記配向多結晶焼結体の結晶方位に概ね倣った結晶方位を有するように形成する工程と、
前記種結晶層上に、厚さ２０μｍ以上の窒化ガリウム系結晶から構成される層を、前記種結晶層の結晶方位に概ね倣った結晶方位を有するように形成する工程と、
前記配向多結晶焼結体を除去して、窒化ガリウム自立基板を得る工程であって、前記窒化ガリウム自立基板の表面に露出している窒化ガリウム系単結晶粒子の最表面における断面平均径ＤＴに対する、前記窒化ガリウム自立基板の厚さＴの比として規定されるアスペクト比Ｔ／ＤＴが０．７以上である工程と、
を含む、窒化ガリウム自立基板の製造方法。 Preparing an oriented polycrystalline sintered body;
Forming a seed crystal layer made of gallium nitride on the oriented polycrystalline sintered body so as to have a crystal orientation substantially following the crystal orientation of the oriented polycrystalline sintered body;
Forming a layer composed of a gallium nitride-based crystal having a thickness of 20 μm or more on the seed crystal layer so as to have a crystal orientation substantially following the crystal orientation of the seed crystal layer;
The step of removing the oriented polycrystalline sintered body to obtain a gallium nitride free-standing substrate, wherein the cross-sectional average diameter D T at the outermost surface of the gallium nitride-based single crystal particles exposed on the surface of the gallium nitride free-standing substrate for the steps aspect ratio T / D T, which is defined as the ratio of the thickness T of the GaN free-standing substrate is 0.7 or more,
A method for manufacturing a gallium nitride free-standing substrate.
前記窒化ガリウム自立基板に、前記窒化ガリウム基板の結晶方位に概ね倣った結晶方位を有するように、略法線方向に単結晶構造を有する複数の半導体単結晶粒子で構成される層を一つ以上形成して発光機能層を設ける工程と、
を含む、発光素子の製造方法。 Preparing the gallium nitride free-standing substrate according to any one of claims 1 to 12 , or preparing the gallium nitride free-standing substrate by the method according to any one of claims 18 to 22 ;
The gallium nitride free-standing substrate includes at least one layer composed of a plurality of semiconductor single crystal particles having a single crystal structure in a substantially normal direction so as to have a crystal orientation that substantially follows the crystal orientation of the gallium nitride substrate. Forming and providing a light emitting functional layer;
A method for manufacturing a light emitting device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015126714A JP2016001738A (en) | 2013-12-18 | 2015-06-24 | Gallium nitride self-supporting substrate, light-emitting element and manufacturing method therefor |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013260868 | 2013-12-18 | ||
| JP2013260868 | 2013-12-18 | ||
| JP2014071342 | 2014-03-31 | ||
| JP2014071342 | 2014-03-31 | ||
| WOPCT/JP2014/064388 | 2014-05-30 | ||
| PCT/JP2014/064388 WO2014192911A1 (en) | 2013-05-31 | 2014-05-30 | Free-standing gallium nitride substrate, light emitting element, method for producing free-standing gallium nitride substrate, and method for manufacturing light emitting element |
| JP2015126714A JP2016001738A (en) | 2013-12-18 | 2015-06-24 | Gallium nitride self-supporting substrate, light-emitting element and manufacturing method therefor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014199217A Division JP5770905B1 (en) | 2013-12-18 | 2014-09-29 | Gallium nitride free-standing substrate, light emitting device, and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016001738A JP2016001738A (en) | 2016-01-07 |
| JP2016001738A5 true JP2016001738A5 (en) | 2017-10-26 |
Family
ID=54187194
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014199217A Active JP5770905B1 (en) | 2013-12-18 | 2014-09-29 | Gallium nitride free-standing substrate, light emitting device, and manufacturing method thereof |
| JP2015126714A Pending JP2016001738A (en) | 2013-12-18 | 2015-06-24 | Gallium nitride self-supporting substrate, light-emitting element and manufacturing method therefor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014199217A Active JP5770905B1 (en) | 2013-12-18 | 2014-09-29 | Gallium nitride free-standing substrate, light emitting device, and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP5770905B1 (en) |
| TW (2) | TWI662163B (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105830237B (en) * | 2013-12-18 | 2019-09-06 | 日本碍子株式会社 | Light-emitting component composite substrate and its manufacturing method |
| WO2016121853A1 (en) | 2015-01-29 | 2016-08-04 | 日本碍子株式会社 | Free-standing substrate, function element and method for producing same |
| WO2017057272A1 (en) * | 2015-09-30 | 2017-04-06 | 日本碍子株式会社 | Oriented alumina substrate for epitaxial growth |
| JP6684815B2 (en) | 2015-09-30 | 2020-04-22 | 日本碍子株式会社 | Oriented alumina substrate for epitaxial growth |
| WO2017086026A1 (en) | 2015-11-16 | 2017-05-26 | 日本碍子株式会社 | Production process for oriented sintered object |
| JP6648253B2 (en) * | 2016-02-25 | 2020-02-14 | 日本碍子株式会社 | Polycrystalline gallium nitride free-standing substrate and light emitting device using the same |
| JP6688109B2 (en) * | 2016-02-25 | 2020-04-28 | 日本碍子株式会社 | Surface emitting device, external cavity type vertical surface emitting laser, and method for manufacturing surface emitting device |
| JP6812413B2 (en) * | 2016-03-29 | 2021-01-13 | 日本碍子株式会社 | Free-standing substrate and laminate |
| JP6639317B2 (en) * | 2016-04-21 | 2020-02-05 | 日本碍子株式会社 | Method for producing group 13 element nitride crystal and seed crystal substrate |
| JP6846913B2 (en) * | 2016-11-11 | 2021-03-24 | 日本碍子株式会社 | Method for manufacturing wide-wavelength light-emitting device and wide-wavelength light-emitting device |
| TWI621249B (en) * | 2017-03-27 | 2018-04-11 | 英屬開曼群島商錼創科技股份有限公司 | Micro light emitting diode and display panel |
| TWI632673B (en) * | 2017-07-11 | 2018-08-11 | 錼創科技股份有限公司 | Micro light-emitting device and display apparatus |
| CN111052415B (en) | 2017-08-24 | 2023-02-28 | 日本碍子株式会社 | Group 13 element nitride layer, free-standing substrate, and functional element |
| US11309455B2 (en) | 2017-08-24 | 2022-04-19 | Ngk Insulators, Ltd. | Group 13 element nitride layer, free-standing substrate and functional element |
| DE112017007796B4 (en) | 2017-08-24 | 2023-09-14 | Ngk Insulators, Ltd. | Layers of a crystal of a nitride of a Group 13 element, self-supporting substrates, functional devices and composite substrates |
| JP6857247B2 (en) | 2017-08-24 | 2021-04-14 | 日本碍子株式会社 | Group 13 element nitride layer, self-supporting substrate and functional element |
| JP7185123B2 (en) * | 2017-12-26 | 2022-12-07 | 日亜化学工業株式会社 | Optical member and light emitting device |
| JP7147644B2 (en) * | 2019-03-18 | 2022-10-05 | 豊田合成株式会社 | Method for manufacturing group III nitride semiconductor |
| CN111607825A (en) * | 2020-06-02 | 2020-09-01 | 无锡吴越半导体有限公司 | Substrate, self-supporting GaN single crystal based on substrate and preparation method of self-supporting GaN single crystal |
| CN116364819B (en) * | 2023-05-31 | 2023-12-15 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3410863B2 (en) * | 1995-07-12 | 2003-05-26 | 株式会社東芝 | Compound semiconductor device and compound semiconductor light emitting device |
| JP3864870B2 (en) * | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | Single crystal gallium nitride substrate, growth method thereof, and manufacturing method thereof |
| US7221037B2 (en) * | 2003-01-20 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate and semiconductor device |
| JP2004359495A (en) * | 2003-06-04 | 2004-12-24 | Ngk Insulators Ltd | Alumina substrate for epitaxial film |
| JP4341702B2 (en) * | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Group III nitride semiconductor light emitting device |
| JP4981602B2 (en) * | 2007-09-25 | 2012-07-25 | パナソニック株式会社 | Method for manufacturing gallium nitride substrate |
| JP2009091175A (en) * | 2007-10-04 | 2009-04-30 | Sumitomo Electric Ind Ltd | GaN (GALLIUM NITRIDE) EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING GaN EPITAXIAL SUBSTRATE AND SEMICONDUCTOR DEVICE |
| US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
-
2014
- 2014-09-29 JP JP2014199217A patent/JP5770905B1/en active Active
-
2015
- 2015-06-24 JP JP2015126714A patent/JP2016001738A/en active Pending
- 2015-06-25 TW TW105136228A patent/TWI662163B/en active
- 2015-06-25 TW TW104120459A patent/TW201627544A/en unknown
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