JP2015523297A - 感光性耐熱材料、その製造方法及びその使用方法 - Google Patents

感光性耐熱材料、その製造方法及びその使用方法 Download PDF

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Publication number
JP2015523297A
JP2015523297A JP2015506280A JP2015506280A JP2015523297A JP 2015523297 A JP2015523297 A JP 2015523297A JP 2015506280 A JP2015506280 A JP 2015506280A JP 2015506280 A JP2015506280 A JP 2015506280A JP 2015523297 A JP2015523297 A JP 2015523297A
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ato
ito
graphene
mixture
weight
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Japanese (ja)
Inventor
アブデルカデル・アリアンヌ
モハメド・ベンワディ
Original Assignee
コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ
コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ
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Publication of JP2015523297A publication Critical patent/JP2015523297A/ja
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/02—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Thermistors And Varistors (AREA)
JP2015506280A 2012-04-20 2013-03-29 感光性耐熱材料、その製造方法及びその使用方法 Pending JP2015523297A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1253653 2012-04-20
FR1253653A FR2989677B1 (fr) 2012-04-20 2012-04-20 Materiau photosensible et thermoresistant, procede de preparation et utilisation
PCT/FR2013/050713 WO2013156705A1 (fr) 2012-04-20 2013-03-29 Materiau photosensible et thermoresistant, procede de preparation et utilisation

Publications (1)

Publication Number Publication Date
JP2015523297A true JP2015523297A (ja) 2015-08-13

Family

ID=48237109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015506280A Pending JP2015523297A (ja) 2012-04-20 2013-03-29 感光性耐熱材料、その製造方法及びその使用方法

Country Status (6)

Country Link
US (1) US10008619B2 (fr)
EP (1) EP2838849B1 (fr)
JP (1) JP2015523297A (fr)
KR (1) KR20150010703A (fr)
FR (1) FR2989677B1 (fr)
WO (1) WO2013156705A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019128176A (ja) * 2018-01-22 2019-08-01 公立大学法人大阪府立大学 温度センサ及び温度センサの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103741094A (zh) * 2014-01-22 2014-04-23 武汉理工大学 石墨烯复合导电氧化物靶材及其透明导电薄膜的制备方法
CN108323170B (zh) * 2017-11-03 2020-09-22 江苏时瑞电子科技有限公司 一种用于热敏电阻的复合膜的制备方法
CN108863293A (zh) * 2018-06-17 2018-11-23 赵娟 硫硒锌化合物光敏电阻材料的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011076578A (ja) * 2009-10-01 2011-04-14 Samsung Electro-Mechanics Co Ltd タッチスクリーンの入力装置及びその製造方法
JP6125611B2 (ja) * 2012-04-20 2017-05-10 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 感光性触覚センサ

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JP3154645B2 (ja) * 1995-01-23 2001-04-09 セントラル硝子株式会社 自動車用合せガラス
US6351068B2 (en) * 1995-12-20 2002-02-26 Mitsui Chemicals, Inc. Transparent conductive laminate and electroluminescence light-emitting element using same
JP2003339540A (ja) * 2002-05-30 2003-12-02 Thermos Kk 電気加熱保温容器
CN101192257A (zh) * 2006-11-20 2008-06-04 鸿富锦精密工业（深圳）有限公司 电子装置及该电子装置的开启方法
KR101119913B1 (ko) * 2009-10-30 2012-03-05 삼성전자주식회사 그래핀 박막을 포함하는 전자 소자 및 그 제조 방법
KR101167969B1 (ko) * 2010-04-12 2012-07-23 한국생산기술연구원 투명열차단 기능을 갖는 나노입자 조성물 및 이를 이용한 투명열차단 기능을 갖는 열저항필름의 제조방법
JP5674594B2 (ja) * 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
US8796677B2 (en) * 2011-12-06 2014-08-05 Nutech Ventures Photovoltaic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011076578A (ja) * 2009-10-01 2011-04-14 Samsung Electro-Mechanics Co Ltd タッチスクリーンの入力装置及びその製造方法
JP6125611B2 (ja) * 2012-04-20 2017-05-10 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 感光性触覚センサ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SEO TAE HOON: "GRAPHENE NETWORK ON INDIUM TIN OXIDE NANODOT NODES 以下省略", APPLIED PHYSICS LETTERS, vol. V98 N25, JPN5015005588, 24 June 2011 (2011-06-24), US, pages P251114-1 - 251114-3 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019128176A (ja) * 2018-01-22 2019-08-01 公立大学法人大阪府立大学 温度センサ及び温度センサの製造方法
JP7014408B2 (ja) 2018-01-22 2022-02-01 公立大学法人大阪 温度センサ

Also Published As

Publication number Publication date
US10008619B2 (en) 2018-06-26
EP2838849B1 (fr) 2020-03-25
WO2013156705A1 (fr) 2013-10-24
FR2989677A1 (fr) 2013-10-25
US20150053895A1 (en) 2015-02-26
FR2989677B1 (fr) 2015-06-19
EP2838849A1 (fr) 2015-02-25
KR20150010703A (ko) 2015-01-28

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