JP2015507688A - ワークピースの処理中の電荷中和装置及び方法 - Google Patents

ワークピースの処理中の電荷中和装置及び方法 Download PDF

Info

Publication number
JP2015507688A
JP2015507688A JP2014545923A JP2014545923A JP2015507688A JP 2015507688 A JP2015507688 A JP 2015507688A JP 2014545923 A JP2014545923 A JP 2014545923A JP 2014545923 A JP2014545923 A JP 2014545923A JP 2015507688 A JP2015507688 A JP 2015507688A
Authority
JP
Japan
Prior art keywords
plasma source
voltage
plasma
high voltage
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2014545923A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015507688A5 (enExample
Inventor
エフ クルンクジ ピーター
エフ クルンクジ ピーター
ジェイ リーヴィット クリストファー
ジェイ リーヴィット クリストファー
ディスターソ ダニエル
ディスターソ ダニエル
ジェイ ミラー ティモシー
ジェイ ミラー ティモシー
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド, ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド filed Critical ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
Publication of JP2015507688A publication Critical patent/JP2015507688A/ja
Publication of JP2015507688A5 publication Critical patent/JP2015507688A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/14—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using charge exchange devices, e.g. for neutralising or changing the sign of the electrical charges of beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
JP2014545923A 2011-12-07 2012-11-19 ワークピースの処理中の電荷中和装置及び方法 Withdrawn JP2015507688A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/313,078 2011-12-07
US13/313,078 US8461554B1 (en) 2011-12-07 2011-12-07 Apparatus and method for charge neutralization during processing of a workpiece
PCT/US2012/065813 WO2013085705A1 (en) 2011-12-07 2012-11-19 Apparatus and method for charge neutralization during processing of a workpiece

Publications (2)

Publication Number Publication Date
JP2015507688A true JP2015507688A (ja) 2015-03-12
JP2015507688A5 JP2015507688A5 (enExample) 2015-09-03

Family

ID=47326373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014545923A Withdrawn JP2015507688A (ja) 2011-12-07 2012-11-19 ワークピースの処理中の電荷中和装置及び方法

Country Status (6)

Country Link
US (1) US8461554B1 (enExample)
JP (1) JP2015507688A (enExample)
KR (1) KR20140108258A (enExample)
CN (1) CN103975092A (enExample)
TW (1) TW201324573A (enExample)
WO (1) WO2013085705A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8541757B1 (en) * 2012-08-14 2013-09-24 Transmute, Inc. Accelerator on a chip having a cold ion source
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9017526B2 (en) * 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
JP6305703B2 (ja) * 2013-08-07 2018-04-04 東芝メモリ株式会社 画像取得装置、画像取得方法及び欠陥検査装置
US9460961B2 (en) * 2014-08-05 2016-10-04 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for anisotropic metal etching
KR20160022458A (ko) 2014-08-19 2016-03-02 삼성전자주식회사 플라즈마 장비 및 이의 동작 방법
FR3045206B1 (fr) 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
US10113229B2 (en) * 2015-12-21 2018-10-30 Varian Semiconductor Equipment Associates, Inc. Techniques for controlling ion/neutral ratio of a plasma source
US10896808B2 (en) * 2018-07-25 2021-01-19 Lam Research Corporation Maintenance mode power supply system
KR20250125354A (ko) * 2022-12-16 2025-08-21 램 리써치 코포레이션 정전 척을 바이어싱하기 위한 방법 및 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010043738A (ko) * 1998-05-22 2001-05-25 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 저 에너지 이온 주입을 위한 방법 및 장치
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
WO2002025694A2 (en) * 2000-09-18 2002-03-28 Axcelis Technologies, Inc. System and method for controlling sputtering and deposition effects in a plasma immersion implantation device
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US7767986B2 (en) * 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
US8101510B2 (en) * 2009-04-03 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
US8603591B2 (en) * 2009-04-03 2013-12-10 Varian Semiconductor Ewuipment Associates, Inc. Enhanced etch and deposition profile control using plasma sheath engineering
US20110143527A1 (en) * 2009-12-14 2011-06-16 Varian Semiconductor Equipment Associates, Inc. Techniques for generating uniform ion beam
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation

Also Published As

Publication number Publication date
US20130146790A1 (en) 2013-06-13
CN103975092A (zh) 2014-08-06
WO2013085705A1 (en) 2013-06-13
TW201324573A (zh) 2013-06-16
KR20140108258A (ko) 2014-09-05
US8461554B1 (en) 2013-06-11

Similar Documents

Publication Publication Date Title
US8461554B1 (en) Apparatus and method for charge neutralization during processing of a workpiece
JP6391261B2 (ja) Ｄｃパルスエッチング装置
KR101667462B1 (ko) 개선된 플라즈마 이온 에너지 처리 시스템들에 대한 웨이퍼 처킹 시스템
US8716682B2 (en) Apparatus and method for multiple slot ion implantation
US20170178866A1 (en) Apparatus and techniques for time modulated extraction of an ion beam
KR101786066B1 (ko) 입자 감소를 위한 진공 비임 형성 통공 세정
JP2006500473A (ja) アーク処理を有する高ピーク電力パルス電源
TW201442077A (zh) 用於處理基底的系統與方法
JP7440528B2 (ja) バイアスされた抽出プレートを備えたイオン源
KR102268345B1 (ko) 전하 중성화 이온 빔에 대한 라디오 주파수 추출 시스템
CN103493172A (zh) 无罩幕图案化植入的装置及方法
US20130287963A1 (en) Plasma Potential Modulated ION Implantation Apparatus
US8053747B2 (en) Substrate processing apparatus and cleaning method of the same
CN101542677A (zh) 用于基底预处理的装置
US11600473B2 (en) Ion source with biased extraction plate
TW201840250A (zh) 中性粒子束處理裝置
US9899189B2 (en) Ion implanter
JP2019003899A (ja) イオン生成装置及びイオン生成方法
KR100633167B1 (ko) 기판처리장치와 기판처리방법
JPH05144774A (ja) プラズマ処理装置
JPH08203458A (ja) イオン源及びイオン生成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150710

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150710

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20150901