JP2015507688A5 - - Google Patents

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Publication number
JP2015507688A5
JP2015507688A5 JP2014545923A JP2014545923A JP2015507688A5 JP 2015507688 A5 JP2015507688 A5 JP 2015507688A5 JP 2014545923 A JP2014545923 A JP 2014545923A JP 2014545923 A JP2014545923 A JP 2014545923A JP 2015507688 A5 JP2015507688 A5 JP 2015507688A5
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JP
Japan
Prior art keywords
plasma source
voltage
high voltage
low voltage
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2014545923A
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English (en)
Japanese (ja)
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JP2015507688A (ja
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Publication date
Priority claimed from US13/313,078 external-priority patent/US8461554B1/en
Application filed filed Critical
Publication of JP2015507688A publication Critical patent/JP2015507688A/ja
Publication of JP2015507688A5 publication Critical patent/JP2015507688A5/ja
Withdrawn legal-status Critical Current

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JP2014545923A 2011-12-07 2012-11-19 ワークピースの処理中の電荷中和装置及び方法 Withdrawn JP2015507688A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/313,078 US8461554B1 (en) 2011-12-07 2011-12-07 Apparatus and method for charge neutralization during processing of a workpiece
US13/313,078 2011-12-07
PCT/US2012/065813 WO2013085705A1 (en) 2011-12-07 2012-11-19 Apparatus and method for charge neutralization during processing of a workpiece

Publications (2)

Publication Number Publication Date
JP2015507688A JP2015507688A (ja) 2015-03-12
JP2015507688A5 true JP2015507688A5 (enExample) 2015-09-03

Family

ID=47326373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014545923A Withdrawn JP2015507688A (ja) 2011-12-07 2012-11-19 ワークピースの処理中の電荷中和装置及び方法

Country Status (6)

Country Link
US (1) US8461554B1 (enExample)
JP (1) JP2015507688A (enExample)
KR (1) KR20140108258A (enExample)
CN (1) CN103975092A (enExample)
TW (1) TW201324573A (enExample)
WO (1) WO2013085705A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8541757B1 (en) * 2012-08-14 2013-09-24 Transmute, Inc. Accelerator on a chip having a cold ion source
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9017526B2 (en) * 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
JP6305703B2 (ja) * 2013-08-07 2018-04-04 東芝メモリ株式会社 画像取得装置、画像取得方法及び欠陥検査装置
US9460961B2 (en) * 2014-08-05 2016-10-04 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for anisotropic metal etching
KR20160022458A (ko) 2014-08-19 2016-03-02 삼성전자주식회사 플라즈마 장비 및 이의 동작 방법
FR3045206B1 (fr) 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
US10113229B2 (en) * 2015-12-21 2018-10-30 Varian Semiconductor Equipment Associates, Inc. Techniques for controlling ion/neutral ratio of a plasma source
US10896808B2 (en) * 2018-07-25 2021-01-19 Lam Research Corporation Maintenance mode power supply system
WO2024129472A1 (en) * 2022-12-16 2024-06-20 Lam Research Corporation Method and apparatus to bias an electrostatic chuck

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010043738A (ko) * 1998-05-22 2001-05-25 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 저 에너지 이온 주입을 위한 방법 및 장치
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
AU2001282327A1 (en) * 2000-09-18 2002-04-02 Axcelis Technologies, Inc. System and method for controlling sputtering and deposition effects in a plasma immersion implantation device
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US7767986B2 (en) * 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
US8101510B2 (en) * 2009-04-03 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
US8603591B2 (en) * 2009-04-03 2013-12-10 Varian Semiconductor Ewuipment Associates, Inc. Enhanced etch and deposition profile control using plasma sheath engineering
US20110143527A1 (en) * 2009-12-14 2011-06-16 Varian Semiconductor Equipment Associates, Inc. Techniques for generating uniform ion beam
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation

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