JP2015501296A - メルカプト基を含有する多官能基の多面体オリゴマーシルセスキオキサン化合物及びその組成物、並びにインプリント用ソフトテンプレート - Google Patents

メルカプト基を含有する多官能基の多面体オリゴマーシルセスキオキサン化合物及びその組成物、並びにインプリント用ソフトテンプレート Download PDF

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JP2015501296A
JP2015501296A JP2014534914A JP2014534914A JP2015501296A JP 2015501296 A JP2015501296 A JP 2015501296A JP 2014534914 A JP2014534914 A JP 2014534914A JP 2014534914 A JP2014534914 A JP 2014534914A JP 2015501296 A JP2015501296 A JP 2015501296A
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substituted
template
composition
soft template
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Japanese (ja)
Inventor
林　宏
宏 林
学 松 姜
学 松 姜
杰 印
杰 印
治 誠 鍛
治 誠 鍛
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Shanghai Jiaotong University
Showa Denko Materials Co Ltd
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Shanghai Jiaotong University
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/0275—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with dithiol or polysulfide compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Silicon Polymers (AREA)
JP2014534914A 2011-10-27 2012-03-15 メルカプト基を含有する多官能基の多面体オリゴマーシルセスキオキサン化合物及びその組成物、並びにインプリント用ソフトテンプレート Pending JP2015501296A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201110332455.X 2011-10-27
CN201110332455.XA CN103087087B (zh) 2011-10-27 2011-10-27 含巯基多官能团的低倍多聚硅氧烷化合物及其组合物和压印的软模板
PCT/CN2012/000319 WO2013060087A1 (zh) 2011-10-27 2012-03-15 含巯基多官能团的低倍多聚硅氧烷化合物及其组合物和压印的软模板

Publications (1)

Publication Number Publication Date
JP2015501296A true JP2015501296A (ja) 2015-01-15

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Family Applications (1)

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JP2014534914A Pending JP2015501296A (ja) 2011-10-27 2012-03-15 メルカプト基を含有する多官能基の多面体オリゴマーシルセスキオキサン化合物及びその組成物、並びにインプリント用ソフトテンプレート

Country Status (3)

Country Link
JP (1) JP2015501296A (zh)
CN (1) CN103087087B (zh)
WO (1) WO2013060087A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023074312A1 (ja) * 2021-11-01 2023-05-04 Nok株式会社 ゴム製品、シール材用の試験治具及び試験装置並びに漏れ検知部材
WO2023088803A1 (de) * 2021-11-22 2023-05-25 Delo Industrie Klebstoffe Gmbh & Co. Kgaa Strahlungshärtbare stempelmasse, verwendung der masse und verfahren zur herstellung von gemusterten erzeugnissen

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103279009B (zh) * 2013-06-14 2015-09-30 中国科学院光电技术研究所 一种柔性紫外光压印复合模板及其制备方法
CN105283805B (zh) 2013-06-19 2019-12-17 Ev 集团 E·索尔纳有限责任公司 用于压印光刻的压印物料
JP2015071741A (ja) * 2013-09-04 2015-04-16 Jsr株式会社 硬化性組成物、ナノインプリント材料、硬化膜、積層体、硬化膜の製造方法、パターン形成方法及び半導体発光素子用基板
KR102143674B1 (ko) * 2013-11-29 2020-08-12 에베 그룹 에. 탈너 게엠베하 다이 구조물을 가지는 다이, 뿐만 아니라 이의 제조 방법
AT516559B1 (de) * 2014-12-10 2017-12-15 Joanneum Res Forschungsgmbh Poly- bzw. Präpolymerzusammensetzung bzw. Prägelack, umfassend eine derartige Zusammensetzung sowie Verwendung derselben
JP6989532B2 (ja) 2016-06-16 2022-01-05 ダウ シリコーンズ コーポレーション ケイ素豊富なシルセスキオキサン樹脂
KR20200097267A (ko) * 2017-12-14 2020-08-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 실록산계 이중-경화 투과성 전사 필름
JP2018166222A (ja) * 2018-07-13 2018-10-25 エーファウ・グループ・エー・タルナー・ゲーエムベーハー スタンパ構造を備えたスタンパ並びにその製造方法
CN111944149A (zh) * 2019-12-10 2020-11-17 上海函泰电子科技有限公司 笼型聚倍半硅氧烷低聚物、压印型光刻胶及其制备方法
CN116333317A (zh) * 2023-02-22 2023-06-27 安徽中烟工业有限责任公司 一种poss基疏水材料及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7433118B2 (en) * 2003-06-26 2008-10-07 Lucent Technologies Inc. Bridged polysesquioxane host matrices containing lanthanides chelated by organic guest ligands, and methods of making such matrices
CN101348385B (zh) * 2008-08-22 2010-09-08 东华大学 均匀纳米孔SiO2低介电薄膜的制备方法
US8535761B2 (en) * 2009-02-13 2013-09-17 Mayaterials, Inc. Silsesquioxane derived hard, hydrophobic and thermally stable thin films and coatings for tailorable protective and multi-structured surfaces and interfaces
CN102174059B (zh) * 2011-02-23 2013-05-01 上海交通大学 含巯基的低倍多聚硅氧烷化合物及其紫外光刻胶组合物以及压印工艺

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023074312A1 (ja) * 2021-11-01 2023-05-04 Nok株式会社 ゴム製品、シール材用の試験治具及び試験装置並びに漏れ検知部材
WO2023088803A1 (de) * 2021-11-22 2023-05-25 Delo Industrie Klebstoffe Gmbh & Co. Kgaa Strahlungshärtbare stempelmasse, verwendung der masse und verfahren zur herstellung von gemusterten erzeugnissen

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WO2013060087A1 (zh) 2013-05-02
CN103087087A (zh) 2013-05-08
CN103087087B (zh) 2015-11-25

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