JP2015231739A - Processing method for brittle material substrate - Google Patents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/08—Severing cooled glass by fusing, i.e. by melting through the glass
- C03B33/082—Severing cooled glass by fusing, i.e. by melting through the glass using a focussed radiation beam, e.g. laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Chemical & Material Sciences (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
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Abstract
Description
本発明は、脆性材料基板の加工方法に関し、さらに詳しくは、脆性材料基板を切断加工する時に基板のチッピングの発生を抑制することができる脆性材料基板の加工方法に関する。 The present invention relates to a method for processing a brittle material substrate, and more particularly, to a method for processing a brittle material substrate that can suppress the occurrence of chipping of the substrate when the brittle material substrate is cut.
一般に、ガラス基板や半導体ウェーハなどの脆性材料基板を切断加工する時には、切断線の縁に沿って通常チッピングと呼ばれる不定形の欠けが発生する問題点がある。 In general, when a brittle material substrate such as a glass substrate or a semiconductor wafer is cut, there is a problem that an irregular chip called chipping usually occurs along the edge of the cutting line.
一方、最近は、脆性材料基板を切断加工する時に非接触式加工方法としてレーザビームを利用した加工方法が多く使用されている。 On the other hand, recently, a processing method using a laser beam is often used as a non-contact processing method when cutting a brittle material substrate.
レーザビームを使用した基板の加工方法では、レーザ発振装置から発振されたレーザビームをレーザ光学系を通じて基板に照射することにより基板を加工する。レーザビームを利用した脆性材料基板の加工方法は、基板の加工しようとする部分にビームスポットを形成することにより、熱エネルギを加えて基板を加工するので精密加工が可能であり、工程時間を減少することができる。 In a substrate processing method using a laser beam, a substrate is processed by irradiating the substrate with a laser beam oscillated from a laser oscillation device through a laser optical system. The method of processing a brittle material substrate using a laser beam allows precise processing because the substrate is processed by applying heat energy by forming a beam spot on the part of the substrate that is to be processed, reducing the process time. can do.
ところで、このようなレーザビームを利用した脆性材料基板の加工方法においても、脆性材料基板の切断加工を行う場合には、基板に切断加工が終わる地点の縁でチッピングが発生し得る。 By the way, also in the processing method of the brittle material substrate using such a laser beam, when the brittle material substrate is cut, chipping may occur at the edge of the point where the cutting process is finished.
本発明は、前述の問題点を解決するためのものであって、脆性材料基板を切断加工する時に基板のチッピングの発生を抑制することができる脆性材料基板の加工方法を提供することをその目的とする。 An object of the present invention is to solve the above-mentioned problems, and to provide a method for processing a brittle material substrate that can suppress the occurrence of chipping of the substrate when the brittle material substrate is cut. And
前記目的を達成するための本発明は、脆性材料基板の加工ラインと一定間隔離隔されて設けられるガイドラインに沿って前記脆性材料基板の表面を一定深さでレーザ加工する工程と、前記脆性材料基板の前記加工ラインに沿って前記脆性材料基板の裏面から表面方向へ前記脆性材料基板をレーザ加工する工程とを含む脆性材料基板の加工方法を提供する。 In order to achieve the above object, the present invention includes a step of laser processing the surface of the brittle material substrate at a certain depth along a guideline provided at a certain distance from a processing line of the brittle material substrate, and the brittle material substrate. And a step of laser processing the brittle material substrate from the back surface to the front surface of the brittle material substrate along the processing line.
前記脆性材料基板の加工方法は、前記ガイドラインに沿って前記脆性材料基板の表面を一定深さでレーザ加工する工程の後に、前記レーザのビームスポットを前記脆性材料基板の裏面へ移動させる工程をさらに含んでもよい。 The processing method of the brittle material substrate further includes a step of moving the laser beam spot to the back surface of the brittle material substrate after the step of laser processing the surface of the brittle material substrate at a certain depth according to the guideline. May be included.
前記レーザ加工する工程では、前記脆性材料基板が固定された状態でレーザ光学系によって前記レーザのビームスポットを移動させることにより前記脆性材料基板を加工することができる。 In the laser processing step, the brittle material substrate can be processed by moving a beam spot of the laser with a laser optical system in a state where the brittle material substrate is fixed.
前記レーザ加工で使用されるレーザは、ナノ秒パルスレーザとすることができる。 The laser used in the laser processing can be a nanosecond pulse laser.
前記ガイドラインは、前記レーザのビームスポットの大きさに基づいて前記加工ラインと４０〜１００μｍの間隔を有するように離隔されて設けることが出来る。 The guide lines may be provided so as to be spaced apart from the processing line by 40 to 100 μm based on the size of the laser beam spot.
前記ガイドラインの加工深さは、４０〜６０μｍとすることができる。 The processing depth of the guide line can be 40 to 60 μm.
前記ガイドラインは、前記加工ラインの両側に一定間隔離隔されて一対が設けられることができる。 A pair of the guide lines may be provided on both sides of the processing line with a certain distance therebetween.
本発明の脆性材料基板の加工方法によると、脆性材料基板を切断加工する時に基板のチッピングの発生を抑制することができる効果がある。 According to the method for processing a brittle material substrate of the present invention, it is possible to suppress the occurrence of chipping of the substrate when the brittle material substrate is cut.
これにより、脆性材料基板の切断加工時に不良率を減少させて生産効率を向上させることができる効果がある。 Thereby, there is an effect that the defective rate can be reduced and the production efficiency can be improved at the time of cutting the brittle material substrate.
以下、本発明の好ましい実施例を添付の図を参照して詳しく説明する。まず、各図の構成要素に参照符号を付加するに際し、同一の構成要素に対しては、たとえ異なる図上に表示されても可能な限り同一符号を有するようにする。また、以下に本発明の好ましい実施例を説明するが、本発明の技術的思想は、これに限定または制限されず、通常の技術者によって変形され、様々に実施され得ることは勿論である。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, when adding reference numerals to the constituent elements in each figure, the same constituent elements have the same reference numerals as much as possible even if they are displayed on different figures. Further, preferred embodiments of the present invention will be described below, but the technical idea of the present invention is not limited or limited thereto, and it is needless to say that various modifications can be made by ordinary engineers.
図１は、本発明の一実施例に係る脆性材料基板の加工方法により加工される基板の表面を示した図であり、図２は、図１のＡ-Ａに係る断面図である。 FIG. 1 is a view showing a surface of a substrate processed by a method for processing a brittle material substrate according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line AA of FIG.
このような図１乃至図２は、本発明を概念的に明確に理解するために、主要特徴部分のみを概念的に示したものである。 FIG. 1 and FIG. 2 conceptually show only the main features in order to clearly understand the present invention conceptually.
図４は、本発明の一実施例に係る脆性材料基板の加工方法の順序図である。 FIG. 4 is a flowchart illustrating a method for processing a brittle material substrate according to an embodiment of the present invention.
図４を参照すると、本発明の一実施例による脆性材料基板の加工方法は、脆性材料基板の加工ラインと一定間隔離隔されて設けられるガイドラインに沿って基板の表面を一定深さでレーザ加工する工程(Ｓ１００)と、レーザのビームスポットを基板の裏面へ移動させる工程(Ｓ２００)と、基板の加工ラインに沿って基板の裏面から表面方向へ基板をレーザ加工する工程(Ｓ３００)を含む。 Referring to FIG. 4, a method for processing a brittle material substrate according to an embodiment of the present invention laser-processes the surface of the substrate at a constant depth according to a guideline provided at a predetermined distance from a processing line of the brittle material substrate. A step (S100), a step (S200) of moving the laser beam spot to the back surface of the substrate, and a step (S300) of laser processing the substrate from the back surface to the front surface along the substrate processing line.
ガイドラインに沿って基板の表面を一定深さでレーザ加工する工程(Ｓ１００)では、レーザ加工装置によりガイドラインに沿って基板表面に一定深さの溝を形成する。 In the step of laser processing the substrate surface at a constant depth along the guideline (S100), a laser processing apparatus forms a groove with a fixed depth along the guideline on the substrate surface.
図１及び図２を参照すると、ガイドラインは、加工ラインと一定間隔離隔されて設けられる。加工ラインは、基板が実際に加工されるラインであり、ガイドラインは、加工ラインと一定間隔離隔された所に一定深さで溝を形成するためのラインである。 Referring to FIGS. 1 and 2, the guide line is provided at a predetermined distance from the processing line. The processing line is a line where the substrate is actually processed, and the guideline is a line for forming a groove with a certain depth at a certain distance from the processing line.
図１に示された加工ラインは、基板の一部領域を孔開け加工するために形成されたラインである。 The processing line shown in FIG. 1 is a line formed for drilling a partial region of the substrate.
本実施例に使用されるレーザ加工装置(図示しない)は、レーザ発振部から発振されたレーザビームをレーザ光学系を通じて基板に照射することにより基板を加工する。レーザ加工装置の制御部は、レーザ光学系を制御してレーザのビームスポットを基板の加工しようとする部分に形成して基板を加工する。 A laser processing apparatus (not shown) used in this embodiment processes a substrate by irradiating the substrate with a laser beam oscillated from a laser oscillation unit through a laser optical system. The control unit of the laser processing apparatus controls the laser optical system to form a laser beam spot on a portion of the substrate to be processed to process the substrate.
すなわち、レーザ加工装置は、加工しようとする脆性材料基板は定位置に固定させた状態でレーザ光学系を制御して、ビームスポットをガイドラインに沿って移動させることにより基板を加工する。 That is, the laser processing apparatus controls the laser optical system with the brittle material substrate to be processed fixed at a fixed position, and processes the substrate by moving the beam spot along the guideline.
レーザ加工装置でビームスポットは、レーザ光学系によって、図１及び図２に表示されたＸ、Ｙ軸方向及びＺ軸方向(基板の厚さ方向)にも移動が可能である。したがって、レーザ加工装置は、ガイドラインに沿ってビームスポットをＸ、Ｙ軸方向に移動して基板を加工すると同時に、Ｚ軸方向にも移動して基板の表面を一定深さで加工する。 In the laser processing apparatus, the beam spot can also be moved in the X, Y axis direction and Z axis direction (thickness direction of the substrate) displayed in FIGS. 1 and 2 by the laser optical system. Therefore, the laser processing apparatus moves the beam spot in the X and Y axis directions along the guideline to process the substrate, and simultaneously moves in the Z axis direction to process the surface of the substrate at a certain depth.
レーザのビームスポットを基板の裏面へ移動させる工程(Ｓ２００)では、基板の表面にガイドラインに沿って溝加工が完了した後、レーザ加工装置はレーザ出力をオフさせた状態でレーザ光学系を制御して、ビームスポットが形成される位置を基板の裏面の加工ライン上へ移動させる。この時にも基板は、固定された状態でレーザ光学系によってビームスポットの形成位置のみが移動されるため、基板の移動による誤差なく精密な加工が可能である。 In the step of moving the laser beam spot to the back surface of the substrate (S200), after the groove processing is completed on the surface of the substrate according to the guideline, the laser processing apparatus controls the laser optical system with the laser output turned off. Then, the position where the beam spot is formed is moved onto the processing line on the back surface of the substrate. Even at this time, since only the beam spot forming position is moved by the laser optical system in a fixed state, the substrate can be precisely processed without error due to the movement of the substrate.
基板の加工ラインに沿って基板の裏面から表面方向へ基板をレーザ加工する工程(Ｓ３００)では、レーザ加工装置により加工ラインに沿って基板の裏面から表面へ切断加工する。 In the step of laser processing the substrate from the back surface to the front surface along the substrate processing line (S300), the laser processing apparatus cuts the substrate from the back surface to the front surface along the processing line.
この工程(Ｓ３００)でも基板は、固定された状態が維持され、レーザ加工装置のレーザ光学系によってビームスポットを基板の裏面で加工ラインに沿って移動しながら基板が加工される。ビームスポットが加工ラインに沿って移動されると同時に、一定速度で基板の裏面から表面に向かってＺ軸方向に移動されるため、基板が加工ラインに沿って切断加工される。 Also in this step (S300), the substrate is maintained in a fixed state, and the substrate is processed while moving the beam spot along the processing line on the back surface of the substrate by the laser optical system of the laser processing apparatus. At the same time as the beam spot is moved along the processing line, it is moved in the Z-axis direction from the back surface to the front surface of the substrate at a constant speed, so that the substrate is cut along the processing line.
このような構成を有する脆性材料基板の加工方法の作用について次のとおり説明する。 The operation of the processing method of the brittle material substrate having such a configuration will be described as follows.
基板の表面にガイドラインに沿って形成される一定深さの溝は、基板が加工ラインに沿って切断加工される際に、加工が基板の表面に達して基板の切断加工が完了する部分で切断線の縁に沿って発生するチッピングまたはクラックが拡散することを防止する。 A groove with a certain depth formed on the surface of the substrate along the guideline is cut at the part where the processing reaches the surface of the substrate and the substrate is cut when the substrate is cut along the processing line. Prevents chipping or cracking that occurs along the edges of the line from diffusing.
図３は、図１の基板でクラック拡散防止効果を説明する図である。 FIG. 3 is a diagram for explaining the effect of preventing crack diffusion in the substrate of FIG.
図３を参照すると、予め形成された基板の表面の加工されたガイドラインは、基板の切断が完了する基板の表面部分加工ラインの縁に沿って発生するクラックがガイドラインの外側へ拡散することを防止する。
これにより、チッピングを最小化して製品の不良率を減少させる効果がある。
Referring to FIG. 3, the preprocessed guideline on the surface of the substrate prevents cracks generated along the edge of the substrate surface processing line where the cutting of the substrate is completed from diffusing outside the guideline. To do.
This has the effect of minimizing chipping and reducing the product defect rate.
レーザを利用した基板の切断加工時に切断線の縁に発生するチッピングは、熱伝導によるエネルギなどにより、切断加工が終わる地点の縁で主に発生する。したがって、予め加工されたガイドラインは、基板の切断加工が終わる表面部に予め溝を形成して、このようなチッピング発生時のクラックの拡散を防止して製品不良率を減少させる。 Chipping generated at the edge of the cutting line during the cutting process of the substrate using a laser mainly occurs at the edge of the point where the cutting process ends due to energy due to heat conduction or the like. Accordingly, the pre-processed guideline forms a groove in the surface portion where the cutting process of the substrate is finished, and prevents the diffusion of cracks when such chipping occurs, thereby reducing the product defect rate.
ガイドラインは、レーザのビームスポットの大きさを考慮して加工ラインと一定間隔を有するように設けられる。ガイドラインが加工ラインと近すぎる場合には、ガイドラインに沿って予め形成された溝部分が加工ラインに沿って加工する工程で共にレーザ加工されることがある。また、ガイドラインが加工ラインと遠すぎる場合には、加工ラインの縁で発生するチッピングの拡散防止効果がないこともある。したがって、ガイドラインは、このような条件を考慮して加工ラインと ４０〜１００μｍの間隔を有することが好ましい。 The guideline is provided so as to have a certain distance from the processing line in consideration of the size of the laser beam spot. When the guideline is too close to the processing line, the groove portion formed in advance along the guideline may be laser processed together in the process of processing along the processing line. Also, if the guideline is too far from the processing line, there may be no effect of preventing diffusion of chipping that occurs at the edge of the processing line. Therefore, it is preferable that the guideline has an interval of 40 to 100 μm from the processing line in consideration of such conditions.
ガイドラインの加工深さは、チッピングが主に発生する領域を考慮して決定する。この他にも基板に強化層がある場合、強化層では、チッピングが発生しやすいので、強化層を貫通できる深さで加工される。一般に、加工効率を考慮してガイドラインは４０〜６０μｍの深さで加工することが好ましい。 The processing depth of the guide line is determined in consideration of an area where chipping mainly occurs. In addition, when the substrate has a reinforcing layer, chipping is likely to occur in the reinforcing layer, so that the substrate is processed to a depth that can penetrate the reinforcing layer. In general, it is preferable to process the guideline at a depth of 40 to 60 μm in consideration of processing efficiency.
本発明の脆性材料基板の加工方法によると、次のような効果がある。 The brittle material substrate processing method of the present invention has the following effects.
第一に、前述のように、脆性材料基板の切断加工時に切断線の縁に沿って発生するチッピングまたはクラックの拡散を防止して製品不良率を減少させて生産性を向上することができる。 First, as described above, chipping or crack diffusion that occurs along the edge of the cutting line during cutting of the brittle material substrate can be prevented to reduce the product defect rate and improve productivity.
第二に、基板は固定された状態でレーザ光学系を制御して、レーザのビームスポットのみを移動させて加工するため加工精度が高い。 Second, since the substrate is fixed and the laser optical system is controlled to move only the laser beam spot, the processing accuracy is high.
第三に、脆性材料基板のレーザ加工時にナノ秒パルスレーザを使用して生産コストを節減させることができる。脆性材料基板のレーザ加工時に基板で発生する熱的損傷を減少させてチッピング及びクラックを減少させるために、ピコ秒パルスレーザを使用することができる。しかし、ピコ秒パルスレーザを使用する加工装備は、ナノ秒パルスレーザを使用する加工装備に比べて価格が格段に高く、製造単価が高くなる問題がある。しかし、本発明の加工方法を使用する場合には、ナノ秒パルスレーザを使用する加工装置においても不良率を減少することができ、生産コストの節減効果がある。 Third, the production cost can be reduced by using a nanosecond pulse laser during laser processing of a brittle material substrate. A picosecond pulsed laser can be used to reduce chipping and cracking by reducing thermal damage generated in the substrate during laser processing of the brittle material substrate. However, the processing equipment using the picosecond pulse laser has a problem that the price is much higher than the processing equipment using the nanosecond pulse laser and the manufacturing unit price is high. However, when the processing method of the present invention is used, the defect rate can be reduced even in a processing apparatus using a nanosecond pulse laser, which has an effect of reducing production costs.
一方、前述の実施例では、脆性材料基板の一定領域を孔開け加工するための加工ラインを対象として発明を説明したが、様々な変形実施が可能である。 On the other hand, in the above-described embodiments, the invention has been described with respect to a processing line for drilling a predetermined region of a brittle material substrate, but various modifications can be made.
例えば、基板の一定領域を孔開けする加工ではなく、単純に基板を切断加工する場合にも本発明の加工方法を使用することができる。この場合には、基板の加工ラインの両側に一定間隔離隔されてガイドラインが設けられることができる。すなわち、孔開け加工では、孔開けされる部分は捨てられるため、孔開けされる部分にガイドラインを形成する必要がないが、加工ラインを基準として両側の部分が全て使用される部分であれば、加工ラインの両側の全てにガイドラインを形成して加工する。 For example, the processing method of the present invention can be used when the substrate is simply cut and processed instead of drilling a certain area of the substrate. In this case, the guideline can be provided on both sides of the substrate processing line with a certain distance. That is, in the drilling process, since the part to be drilled is discarded, it is not necessary to form a guideline in the part to be drilled, but if the parts on both sides are used on the basis of the processing line, Process by forming guide lines on both sides of the processing line.
以上の説明は、本発明の技術思想を例示的に説明したものに過ぎないものであって、本発明が属する技術分野において通常の知識を有する者であれば、本発明の本質的な特性から脱しない範囲内で様々な修正、変更及び置換が可能であろう。 したがって、本発明に開示された実施例及び添付された図は、本発明の技術思想を限定するためではなく、一例として説明するためのものであって、このような実施例及び添付された図によって本発明の権利範囲が限定されるものではない。本発明の権利範囲は、特許請求の範囲によって解釈されるべきであり、それと同等な範囲内にある全ての技術思想は、本発明の権利範囲に含まれるものと解釈されるべきであろう。 The above description is merely illustrative of the technical idea of the present invention. If the person has ordinary knowledge in the technical field to which the present invention belongs, the essential characteristics of the present invention are described. Various modifications, changes and substitutions may be made without departing from the scope. Accordingly, the embodiments disclosed in the present invention and the accompanying drawings are not intended to limit the technical idea of the present invention, but are described as examples. However, the scope of rights of the present invention is not limited. The scope of the right of the present invention should be construed according to the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the right of the present invention.
１０：基板
１１：加工ライン
１２：ガイドライン
10: Substrate 11: Processing line 12: Guidelines
Claims (7)
前記脆性材料基板の前記加工ラインに沿って前記脆性材料基板の裏面から表面方向へ前記脆性材料基板をレーザ加工する工程と
を含む脆性材料基板の加工方法。 Laser processing the surface of the brittle material substrate at a certain depth along a guideline provided at a certain distance from a processing line of the brittle material substrate having a front surface and a back surface;
And a step of laser processing the brittle material substrate from the back surface to the front surface of the brittle material substrate along the processing line of the brittle material substrate.
前記レーザのビームスポットを前記脆性材料基板の裏面へ移動させる工程をさらに含む請求項１に記載の脆性材料基板の加工方法。 After the step of laser processing the surface of the brittle material substrate at a certain depth along the guidelines,
The method for processing a brittle material substrate according to claim 1, further comprising a step of moving a beam spot of the laser to the back surface of the brittle material substrate.
前記脆性材料基板が固定された状態でレーザ光学系によって前記レーザのビームスポットを移動させることにより前記脆性材料基板を加工することを特徴とする請求項１または２に記載の脆性材料基板の加工方法。 In the laser processing step,
3. The processing method for a brittle material substrate according to claim 1, wherein the brittle material substrate is processed by moving a beam spot of the laser by a laser optical system in a state where the brittle material substrate is fixed. .
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| KR101650076B1 (en) | 2016-08-22 |
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