JP2015222343A - Method of producing electro-optic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of producing a high quality liquid crystal device.SOLUTION: The method includes the steps of sticking together a first large-sized substrate 500a provided with an orientation flat 511, and a second large-sized substrate 500b provided with a notch 512, and cutting an area including the notch 512 of the second large-sized substrate 500b projecting from a position at which the orientation flat 511 is provided on the first large-sized substrate 500a.

Description

  The present invention relates to a method for manufacturing an electro-optical device.

  As one of the electro-optical devices, for example, an active drive type liquid crystal device including a transistor for each pixel as an element for switching control of a pixel electrode is known. Liquid crystal devices are used in, for example, direct-view displays and projector light valves.

  For example, as described in Patent Document 1, the liquid crystal device is formed by attaching a large first substrate (mother substrate) to be a plurality of element substrates and a large second substrate (mother substrate) to be a plurality of counter substrates. After combining, it is formed by cutting to the size of the liquid crystal device.

JP 2009-205140 A

  However, when the shapes of the first substrate and the second substrate are different (for example, when the orientation flat is formed on the first substrate and only the notch is formed on the round substrate), the outer peripheral shape of the liquid crystal device In the cutting process, even if an attempt is made to position at the end surface of the orientation flat of the first substrate, there is a problem that the positioning cannot be performed because the second substrate projects from the end surface of the orientation flat.

  An aspect of the present invention has been made to solve at least a part of the above problems, and can be realized as the following forms or application examples.

  Application Example 1 A method for manufacturing a liquid crystal device according to this application example includes a step of bonding a first substrate provided with an orientation flat and a second substrate provided with a notch, and the orientation flat of the first substrate. Cutting the region including the notch of the second substrate that protrudes from the position where the second substrate is provided.

  According to this application example, since the region including the notch of the second substrate that protrudes from the end surface of the orientation flat of the first substrate is cut, the shape of the first substrate on which the orientation flat is provided can be made substantially the same. It becomes possible. Therefore, the bonded first substrate and second substrate can be positioned with reference to the end face of the orientation flat of the first substrate. In other words, the first substrate and the second substrate can be positioned with reference to the orientation flat without being affected by the region of the second substrate protruding from the end face of the orientation flat of the first substrate.

  Application Example 2 In the method of manufacturing a liquid crystal device according to the application example, the step of cutting the region including the notch of the second substrate cuts a region inside the end surface of the orientation flat of the first substrate. Is preferred.

  According to this application example, the region of the second substrate inside the end face of the orientation flat of the first substrate is cut, in other words, smaller than the shape of the first substrate. The end surface of the orientation flat of one substrate and the positioning pin can be reliably brought into contact with each other.

  Application Example 3 In the method of manufacturing the liquid crystal device according to the application example, the method includes a step of positioning the first substrate and the second substrate attached after the step of cutting the region including the notch, In the positioning step, it is preferable that two positioning portions are disposed on the portion contacting the orientation flat, and one positioning pin is disposed on the first substrate excluding the orientation flat and the portion contacting the outer periphery of the second substrate.

  According to this application example, the positioning between the first substrate and the second substrate pasted with the three positioning pins is performed, so that the positional relationship between the first substrate and the second substrate and the apparatus to be cut is normalized. The positional relationship can be made.

The schematic plan view which shows the structure of a large sized board | substrate. The enlarged plan view which expands and shows the A section of the large sized board | substrate shown in FIG. FIG. 2 is a schematic plan view illustrating a configuration of a liquid crystal device. FIG. 4 is a schematic cross-sectional view taken along the line H-H ′ of the liquid crystal device illustrated in FIG. 3. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 3 is a schematic cross-sectional view mainly illustrating a pixel structure in a liquid crystal device. 5 is a flowchart showing a method for manufacturing a liquid crystal device in the order of steps. The schematic diagram which shows a one part process among the manufacturing methods of a liquid crystal device. The schematic diagram which shows a one part process among the manufacturing methods of a liquid crystal device. The schematic diagram which shows a one part process among the manufacturing methods of a liquid crystal device. The schematic diagram which shows a one part process among the manufacturing methods of a liquid crystal device. The schematic diagram which shows a one part process among the manufacturing methods of a liquid crystal device. Schematic which shows the structure of a projection type display apparatus. The schematic diagram which shows a one part process among the manufacturing methods of the liquid crystal device of a modification. FIG. 9 is a schematic cross-sectional view showing a part of a manufacturing method of a liquid crystal device according to a modification.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

  In this embodiment, as an example of an electro-optical device, an active matrix liquid crystal device including a thin film transistor (TFT) as a pixel switching element will be described as an example. This liquid crystal device can be suitably used, for example, as a light modulation element (liquid crystal light valve) of a projection display device (liquid crystal projector).

<Configuration of large substrate including electro-optical device>
FIG. 1 is a schematic plan view showing the configuration of a large substrate. FIG. 2 is an enlarged plan view showing an enlarged portion A of the large substrate shown in FIG. Hereinafter, the configuration of the large substrate will be described with reference to FIGS. 1 and 2.

  As shown in FIG. 1, the large substrate 500 is used, for example, for manufacturing a plurality of liquid crystal devices 100 simultaneously. The large substrate 500 is provided with a plurality of pairs of substrates constituting the liquid crystal device 100 in a matrix shape. The size of the large substrate 500 is, for example, 8 inches. The thickness of one of the large substrates 500 (the first large substrate as the first substrate) is, for example, 1.2 mm. The thickness of the other substrate (second large substrate as the second substrate) is, for example, 0.7 mm. The material of the large substrate 500 is, for example, quartz.

  The large substrate 500 includes an effective chip region 501 that is a product region of the liquid crystal device 100 and a dummy chip region 502 that is a region around the effective chip region 501 that is not a product of the liquid crystal device 100.

  As shown in FIG. 2, in each liquid crystal device 100, a data line driving circuit 22, a scanning line driving circuit 24, and an external connection terminal 35 as peripheral circuits are formed around the display area E. The data line driving circuit 22 and the scanning line driving circuit 24 and the external connection terminal 35 are electrically connected to each other by a wiring 29.

<Configuration of liquid crystal device as electro-optical device>
FIG. 3 is a schematic plan view showing the configuration of the liquid crystal device. 4 is a schematic cross-sectional view taken along the line HH ′ of the liquid crystal device shown in FIG. FIG. 5 is an equivalent circuit diagram showing an electrical configuration of the liquid crystal device. Hereinafter, the configuration of the liquid crystal device will be described with reference to FIGS.

  As shown in FIGS. 3 and 4, the liquid crystal device 100 of the present embodiment includes an element substrate 10 and a counter substrate 20 that are arranged so as to face each other, and a liquid crystal layer 15 that is sandwiched between the pair of substrates. As the first base material 10a as the substrate constituting the element substrate 10 and the second base material 20a constituting the counter substrate 20, for example, a transparent substrate such as a glass substrate or a quartz substrate is used.

  The element substrate 10 is larger than the counter substrate 20, and both the substrates 10, 20 are bonded together via a seal material 14 disposed along the outer periphery of the counter substrate 20. In the element substrate 10, liquid crystal having positive or negative dielectric anisotropy is sealed between the opposing substrates 20 inside the sealing material 14 provided in an annular shape in plan view, thereby forming a liquid crystal layer 15. For the sealing material 14, for example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed. Spacers (not shown) are mixed in the sealing material 14 to keep the distance between the pair of substrates constant.

  A display area E in which a plurality of pixels P are arranged is provided inside the inner edge of the sealing material 14. The display area E may include dummy pixels arranged so as to surround the plurality of pixels P in addition to the plurality of pixels P contributing to display. Although not shown in FIGS. 3 and 4, a light shielding film (black matrix: BM) that divides a plurality of pixels P in a plane in the display area E is provided on the counter substrate 20.

  A data line driving circuit 22 is provided between the sealing material 14 along one side of the element substrate 10 and the one side. Further, an inspection circuit 25 is provided between the sealing material 14 and the display area E along the other one side facing the one side. Further, a scanning line driving circuit 24 is provided between the sealing material 14 and the display area E along the other two sides that are orthogonal to the one side and face each other. A plurality of wirings 29 connecting the two scanning line driving circuits 24 are provided between the sealing material 14 and the inspection circuit 25 along the other one side facing the one side.

  A light shielding film 18 (parting part) as a light shielding member is provided between the sealing material 14 arranged in a ring shape on the counter substrate 20 and the display region E. The light shielding film 18 is made of, for example, a light shielding metal or metal oxide, and the inside of the light shielding film 18 is a display area E having a plurality of pixels P. Although not shown in FIG. 3, the display region E is also provided with a light shielding film that divides a plurality of pixels P in a plane.

  Wirings connected to the data line driving circuit 22 and the scanning line driving circuit 24 are connected to a plurality of external connection terminals 35 arranged along the one side. Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction.

  As shown in FIG. 4, on the surface of the first base material 10a on the liquid crystal layer 15 side, a transparent pixel electrode 27 provided for each pixel P and a thin film transistor (TFT: Thin Film Transistor, which is a switching element) are provided. Hereinafter, it is referred to as “TFT 30”), signal wirings, and an alignment film 28 covering them.

  In addition, a light shielding structure is employed that prevents light from entering the semiconductor layer in the TFT 30 to make the switching operation unstable. The element substrate 10 in the present invention includes at least the pixel electrode 27, the TFT 30, and the alignment film 28.

  On the surface of the counter substrate 20 on the liquid crystal layer 15 side, the light shielding film 18, the insulating film 33 formed so as to cover it, the counter electrode 31 provided so as to cover the insulating film 33, and the counter electrode 31 And an alignment film 32 is provided. The counter substrate 20 in the present invention includes at least an insulating film 33, a counter electrode 31, and an alignment film 32.

  As shown in FIG. 3, the light shielding film 18 surrounds the display area E and is provided at a position where the scanning line driving circuit 24 and the inspection circuit 25 overlap in a plan view (illustration is simplified). Thus, the light incident on the peripheral circuit including these drive circuits from the counter substrate 20 side is shielded, and the peripheral circuit is prevented from malfunctioning due to the light. Further, unnecessary stray light is shielded from entering the display area E, and high contrast in the display of the display area E is ensured.

  The insulating film 33 is made of, for example, an inorganic material such as silicon oxide, and is provided so as to cover the light shielding film 18 with optical transparency. As a method for forming such an insulating film 33, for example, a method of forming a film using a plasma CVD (Chemical Vapor Deposition) method or the like can be cited.

  The counter electrode 31 is made of, for example, a transparent conductive film such as ITO (Indium Tin Oxide), covers the insulating film 33, and as shown in FIG. 3, the element substrate 10 is formed by vertical conduction portions 26 provided at the four corners of the counter substrate 20. It is electrically connected to the side wiring.

  The alignment film 28 that covers the pixel electrode 27 and the alignment film 32 that covers the counter electrode 31 are selected based on the optical design of the liquid crystal device 100. The alignment films 28 and 32 are formed by depositing an inorganic material such as SiOx (silicon oxide) using a vapor phase growth method, and aligning the liquid crystal molecules having negative dielectric anisotropy substantially vertically. A membrane is mentioned.

  Such a liquid crystal device 100 is a transmission type, and the transmittance of the pixel P when the voltage is not applied is normally white larger than the transmittance when the voltage is applied, or the transmittance of the pixel P when the voltage is not applied. A normally black mode optical design is employed, which is smaller than the transmittance when a voltage is applied. Polarizing elements are arranged and used according to the optical design on the light incident side and the light exit side, respectively.

  As shown in FIG. 5, the liquid crystal device 100 includes a plurality of scanning lines 3 a and a plurality of data lines 6 a that are insulated from each other at least in the display region E and a capacitance line 3 b as a common potential wiring. The direction in which the scanning line 3a extends is the X direction, and the direction in which the data line 6a extends is the Y direction.

  A pixel electrode 27, a TFT 30, and a capacitive element 16 are provided in a region divided by the scanning line 3a, the data line 6a, the capacitive line 3b, and these signal lines, and these constitute a pixel circuit of the pixel P. doing.

  The scanning line 3 a is electrically connected to the gate of the TFT 30, and the data line 6 a is electrically connected to the data line side source / drain region (source region) of the TFT 30. The pixel electrode 27 is electrically connected to the pixel electrode side source / drain region (drain region) of the TFT 30.

  The data line 6a is connected to the data line driving circuit 22 (see FIG. 3), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 22 to the pixels P. The scanning line 3a is connected to the scanning line driving circuit 24 (see FIG. 3), and supplies the scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 24 to each pixel P.

  The image signals D1 to Dn supplied from the data line driving circuit 22 to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each of a plurality of adjacent data lines 6a for each group. Good. The scanning line driving circuit 24 supplies the scanning signals SC1 to SCm to the scanning line 3a at a predetermined timing.

  In the liquid crystal device 100, the TFT 30 as a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6a are supplied to the pixel electrode 27 at a predetermined timing. It is the structure written in. The predetermined level of the image signals D1 to Dn written to the liquid crystal layer 15 through the pixel electrode 27 is held for a certain period between the pixel electrode 27 and the counter electrode 31 disposed to face the liquid crystal layer 15. The

  In order to prevent the held image signals D1 to Dn from leaking, the capacitive element 16 is connected in parallel with the liquid crystal capacitance formed between the pixel electrode 27 and the counter electrode 31. The capacitive element 16 is provided between the pixel electrode side source / drain region of the TFT 30 and the capacitive line 3b. The capacitive element 16 has a dielectric layer between two capacitive electrodes.

<Configuration of pixels constituting liquid crystal device>
FIG. 6 is a schematic cross-sectional view mainly showing the structure of a pixel in the liquid crystal device. Hereinafter, the pixel structure of the liquid crystal device will be described with reference to FIG. FIG. 6 shows the cross-sectional positional relationship of each component, and is represented on a scale that can be clearly shown.

  As shown in FIG. 6, the liquid crystal device 100 includes an element substrate 10 and a counter substrate 20 disposed to face the element substrate 10. As described above, the first base material 10a configuring the element substrate 10 is configured by, for example, a quartz substrate.

  As shown in FIG. 6, a lower light-shielding layer 3c containing a material such as Al (aluminum), Ti (titanium), Cr (chromium), W (tungsten) is formed on the first base material 10a. ing. The lower light-shielding layer 3c is patterned in a lattice shape in a plane, and defines the opening area of each pixel P. Note that the lower light shielding layer 3c may have conductivity and function as a part of the scanning line 3a. A base insulating layer 11a made of silicon oxide or the like is formed on the first base material 10a and the lower light shielding layer 3c.

  On the base insulating layer 11a, the TFT 30, the scanning line 3a, and the like are formed. The TFT 30 has, for example, an LDD (Lightly Doped Drain) structure, and includes a semiconductor layer 30a made of polysilicon (high-purity polycrystalline silicon), a gate insulating layer 11g formed on the semiconductor layer 30a, A gate electrode 30g made of a polysilicon film or the like formed on the gate insulating layer 11g. The scanning line 3a also functions as the gate electrode 30g.

  The semiconductor layer 30a is formed as an N-type TFT 30 by implanting N-type impurity ions such as phosphorus (P) ions. Specifically, the semiconductor layer 30a includes a channel region 30c, a data line side LDD region 30s1, a data line side source / drain region 30s, a pixel electrode side LDD region 30d1, and a pixel electrode side source / drain region 30d. ing.

  The channel region 30c is doped with P-type impurity ions such as boron (B) ions. The other regions (30s1, 30s, 30d1, 30d) are doped with N-type impurity ions such as phosphorus (P) ions. Thus, the TFT 30 is formed as an N-type TFT.

  A first interlayer insulating layer 11b made of silicon oxide or the like is formed on the gate electrode 30g and the gate insulating layer 11g. A capacitive element 16 is provided on the first interlayer insulating layer 11b. Specifically, the first capacitor electrode 16a as the pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 30d and the pixel electrode 27 of the TFT 30, and the capacitor line 3b (as the fixed potential side capacitor electrode). A part of the second capacitor electrode 16b) is disposed to face the dielectric film 16c, whereby the capacitor element 16 is formed.

  The dielectric film 16c is, for example, a silicon nitride film. The second capacitor electrode 16b (capacitor line 3b) includes at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). , Metal simple substance, alloy, metal silicide, polysilicide, and a laminate of these. Alternatively, it can be formed from an Al (aluminum) film.

  The first capacitor electrode 16 a is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode of the capacitor element 16. However, the first capacitor electrode 16a may be composed of a single layer film or a multilayer film containing a metal or an alloy, like the capacitor line 3b. In addition to functioning as a pixel potential side capacitance electrode, the first capacitance electrode 16a relay-connects the pixel electrode 27 and the pixel electrode side source / drain region 30d (drain region) of the TFT 30 via contact holes CNT1, CNT3, and CNT4. It has the function to do.

  A data line 6a is formed on the capacitive element 16 via the second interlayer insulating layer 11c. The data line 6a is connected to the data line side source / drain of the semiconductor layer 30a through the contact hole CNT2 formed in the gate insulating layer 11g, the first interlayer insulating layer 11b, the dielectric film 16c, and the second interlayer insulating layer 11c. It is electrically connected to the region 30s (source region).

  A pixel electrode 27 is formed on the data line 6a via a third interlayer insulating layer 11d. The third interlayer insulating layer 11d is made of, for example, silicon oxide or nitride, and is subjected to a flattening process for flattening the convex portions on the surface generated by covering the region where the TFT 30 is provided. Examples of the planarization method include chemical mechanical polishing (CMP) and spin coating. A contact hole CNT4 is formed in the third interlayer insulating layer 11d.

  The pixel electrode 27 is electrically connected to the pixel electrode side source / drain region 30d (drain region) of the semiconductor layer 30a by being connected to the first capacitor electrode 16a via the contact holes CNT4 and CNT3. The pixel electrode 27 is formed of a transparent conductive film such as an ITO film, for example.

On the third interlayer insulating layer 11d between the pixel electrode 27 and the adjacent pixel electrode 27, an alignment film 28 obtained by obliquely depositing an inorganic material such as silicon oxide (SiO ₂ ) is provided. On the alignment film 28, a liquid crystal layer 15 in which liquid crystal or the like is sealed in a space surrounded by the sealing material 14 (see FIGS. 3 and 4) is provided.

On the other hand, an insulating film 33 made of, for example, a PSG film (phosphorus-doped silicon oxide) is provided on the second base material 20a (the liquid crystal layer 15 side). On the insulating film 33, the counter electrode 31 is provided over the entire surface. On the counter electrode 31, an alignment film 32 is formed by obliquely depositing an inorganic material such as silicon oxide (SiO ₂ ). The counter electrode 31 is made of a transparent conductive film such as an ITO film, for example, like the pixel electrode 27 described above.

  The liquid crystal layer 15 takes a predetermined alignment state by the alignment films 28 and 32 in a state where no electric field is generated between the pixel electrode 27 and the counter electrode 31. The sealing material 14 is an adhesive made of, for example, a photo-curing resin or a thermosetting resin for bonding the element substrate 10 and the counter substrate 20, and sets the distance between the element substrate 10 and the counter substrate 20 to a predetermined value. Spacers such as glass fiber or glass beads are mixed.

<Method for manufacturing liquid crystal device>
FIG. 7 is a flowchart showing the method of manufacturing the liquid crystal device in the order of steps. 8 to 12 are schematic views showing some steps in the method of manufacturing the liquid crystal device. Hereinafter, a method for manufacturing the liquid crystal device will be described with reference to FIGS.

  First, a manufacturing method on the element substrate 10 side will be described. First, in step S11, the TFT 30 is formed on the first base material 10a made of a quartz substrate or the like. Specifically, first, a lower light-shielding layer 3c (scanning line) made of aluminum or the like is formed on the first base material 10a. Thereafter, a base insulating layer 11a made of silicon oxide or the like is formed using a known film forming technique.

  Next, the TFT 30 is formed on the base insulating layer 11a. Specifically, the TFT 30 is formed using a well-known film formation technique, photolithography technique, and etching technique.

  In step S12, the pixel electrode 27 is formed. As a manufacturing method, similarly to the above, the pixel electrode 27 is formed by using a well-known film formation technique, photolithography technique, and etching technique.

  In step S13, the alignment film 28 is formed. Specifically, the alignment film 28 is formed by oblique vapor deposition so as to cover the pixel electrode 27 and the like. As a result, an alignment film 28 having columns (not shown) stacked in a columnar shape so as to be inclined at a predetermined angle is formed on the surface of the element substrate 10. Thus, the element substrate 10 side is completed.

  Next, a manufacturing method on the counter substrate 20 side will be described. First, in step S21, the counter electrode 31 is formed on the second base material 20a made of a translucent material such as a glass substrate by using a well-known film forming technique, photolithography technique, and etching technique.

  In step S <b> 22, the alignment film 32 is formed on the counter electrode 31. The method of manufacturing the alignment film 32 is the same as that of the alignment film 28 described above, and is formed using, for example, an oblique deposition method. Thus, the counter substrate 20 side is completed. Next, a method for bonding the element substrate 10 and the counter substrate 20 will be described.

  In step S <b> 31, the sealing material 14 is applied on the element substrate 10. Specifically, for example, the relative positional relationship between the element substrate 10 and a dispenser (also possible with a discharge device) is changed, so that the periphery of the display area E in the element substrate 10 (so as to surround the display area E). The sealing material 14 is applied.

  Examples of the sealing material 14 include an ultraviolet curable epoxy resin. In addition, it is not limited to photocurable resins, such as an ultraviolet-ray, You may make it use a thermosetting resin. Further, the sealing material 14 includes, for example, a gap material such as a spacer for setting a distance (gap or cell gap) between the element substrate 10 and the counter substrate 20 to a predetermined value.

  In step S <b> 32, the liquid crystal is dropped inside the seal material 14. Specifically, the liquid crystal is dropped onto an area surrounded by the sealing material 14 (ODF (One Drop Fill) method). As a dropping method, for example, an ink jet head can be used. Further, it is desirable that the liquid crystal is dropped on the central portion of the region (display region E) surrounded by the sealing material 14.

  In step S33, the element substrate 10 and the counter substrate 20 are bonded together. Specifically, as shown in FIG. 8, the first large substrate 500a and the second large substrate 500b are bonded together via the sealing material 14 (see FIGS. 3 and 4) applied to the first large substrate 500a. . At this time, an orientation flat 511 is formed on the first large substrate 500a. In the second large substrate 500b, the orientation flat 511 is not formed, but the notch 512 is formed.

  In step S34 (cutting 1), a part of the large substrate 500 (second large substrate 500b) is cut. First, in the step shown in FIG. 9A, a large substrate 500 is placed on a stage (not shown). Next, in the step shown in FIG. 9B, the region including the notch 512 in the second large substrate 500b is cut. Specifically, the region of the second large substrate 500b protruding from the end surface of the orientation flat 511 of the first large substrate 500a is cut in plan view. As a method of cutting, for example, a scribing / breaking method or a dicing method (dicer) may be used.

  In FIG. 9C, the large substrate 500 is positioned. Specifically, the end surface of the orientation flat 511 which is a portion cut in the previous process is pressed against the positioning pins 513 (513a, 513b) arranged on the stage. Two positioning pins 513 (513a, 513b) that contact the end surface of the orientation flat 511 and one (513c) that contacts the outer peripheral end surface excluding the orientation flat 511 of the large substrate 500 are arranged. By pressing the large substrate 500 against the three positioning pins 513 (513a to 513c), the positions of the stage and the large substrate 500 can be determined as regular positions.

  In step S35 (cutting 2), the liquid crystal device 100 is cut from the large substrate 500. First, in the step shown in FIG. 10A, the first cut portion 521 is formed from the cut surface 500b1 on the side of the second large substrate 500b that does not face the liquid crystal layer 15.

  Next, in the step shown in FIG. 10B, the first tape 522 is attached to the attachment surface 500a1 that does not face the liquid crystal layer 15 out of both surfaces of the first large substrate 500a. Since the 1st tape 522 is affixed for the purpose of breaking the composite substrate (500) mentioned later, it is affixed on the whole affixing surface 500a1.

  Next, as shown in FIG. 10C, by applying a force F1 from the side of the back surface 522a that is not in contact with the pasting surface 500a1 to both sides of the first tape 522, A first separation surface 523 extending from the cut portion 521 to the first surface 500b2 on the side facing the liquid crystal layer 15 of both surfaces of the second large substrate 500b is formed. That is, the second large substrate 500b is broken so as to be separated.

  Next, as shown in FIG. 11A, the dicing process is performed on the second large-sized substrate 500b from a position shifted from the first separation surface 523 on the cut surface 500b1, thereby the cut surface 500b1 to the first surface 500b2. An extending first separation groove 524 is formed.

  The first separation groove 524 is formed along the edge on the side where the external connection terminal 35 is formed among the plurality of edges that define the surface facing the liquid crystal layer 15 of both surfaces of the first large substrate 500a. It is formed so as to overlap the edge. As described above, since only the dicing process is performed on the external connection terminal 35, the external connection terminal 35 and the wiring electrically connected to the external connection terminal 35 are not damaged. Further, by performing the half dicing process along the first cut portion 521, the external dimension accuracy of the counter substrate 20 is improved.

  Next, in the step shown in FIG. 11B, the small piece portion 525 that is a portion surrounded by the first separation surface 523, the first separation groove 524, and the first surface 500b2 is removed from the second large substrate 500b. . The small piece portion 525 is a portion that overlaps with the external connection terminal 35 in the finally manufactured liquid crystal device 100, and is thus removed in advance in this step.

  Next, as shown in FIG. 11C, after the first tape 522 is removed from the application surface 500a1, the second tape 532 is applied to the cut surface 500b1. Accordingly, the composite substrate (500) is fixed to the second tape 532 from the cut surface 500b1 side. The second tape 532 is attached to the entire cut surface 500b1, more specifically, the entire cut surface 500b1 after the small piece portion 525 is removed, like the first tape 522. preferable.

  Next, in the step shown in FIG. 12A, the second cut portion 541 is formed at a position corresponding to the first separation groove 524 on the attachment surface 500a1.

  Next, in the step shown in FIG. 12B, by applying a force F2 toward the second cut portion 541 from the back surface 532a side that does not face the cut surface 500b1 out of both surfaces of the second tape 532, the second cut is performed. A second separation surface 542 extending from the portion 541 to the second surface 500a2 on the side facing the liquid crystal layer 15 out of both surfaces of the first large substrate 500a is formed.

  The second cut portion 541 is a cut portion serving as a starting point when breaking the first large substrate 500a. Therefore, the first large substrate 500a is broken by applying a force F2 from the back surface 532a side that does not face the cut surface 500b1 to the second cut portion 541 of both surfaces of the second tape 532.

  Next, as shown in FIG. 12C, the plurality of liquid crystal devices 100 separated from each other are separated from the second tape 532. When removing the plurality of liquid crystal devices 100 from the second tape 532, in other words, when removing them from the second tape 532, the plurality of liquid crystal devices 100 are sucked by suction means such as a sorter device. Thus, the liquid crystal device 100 is completed.

<Configuration of electronic equipment>
Next, a projection display device including the liquid crystal device will be described with reference to FIG. FIG. 13 is a schematic diagram illustrating a configuration of a projection display device.

  As shown in FIG. 13, the projection display apparatus 1000 of the present embodiment includes a polarization illumination apparatus 1100 arranged along the system optical axis L, two dichroic mirrors 1104 and 1105 as light separation elements, and three Reflective mirrors 1106, 1107, 1108, five relay lenses 1201, 1202, 1203, 1204, 1205, three transmissive liquid crystal light valves 1210, 1220, 1230 as light modulation means, and a cross dichroic as a light combiner A prism 1206 and a projection lens 1207 are provided.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

  The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205. Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204. The blue light (B) transmitted through the dichroic mirror 1105 enters the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206.

  In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected on the screen 1300 by the projection lens 1207 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is the one to which the liquid crystal device 100 described above is applied. The liquid crystal device 100 is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and the emission side of colored light. The same applies to the other liquid crystal light valves 1220 and 1230.

  Since the liquid crystal light valves 1210, 1220, and 1230 are used in such a projection display apparatus 1000, high reliability can be obtained.

  The electronic device on which the liquid crystal device 100 is mounted includes a projection display device 1000, a head-up display (HUD), a head-mounted display (HMD), a smartphone, an EVF (Electrical View Finder), a mobile mini projector, an electronic device. It can be used for various electronic devices such as books, mobile phones, mobile computers, digital cameras, digital video cameras, displays, in-vehicle devices, audio devices, exposure devices, and lighting devices.

  As described above in detail, according to the method for manufacturing the liquid crystal device 100 of the present embodiment, the following effects can be obtained.

  (1) According to the manufacturing method of the liquid crystal device 100 of the present embodiment, the region including the notch 512 of the second large substrate 500b that protrudes from the first large substrate 500a is cut, so the first provided with the orientation flat 511. It becomes possible to make the shape substantially the same as that of the large substrate 500a. Therefore, the bonded first large substrate 500a and second large substrate 500b can be positioned based on the end face of the orientation flat 511 of the first large substrate 500a. In other words, the large substrate 500 (500a, 500b) is positioned using the end surface of the orientation flat 511 without being obstructed by the region of the second large size substrate 500b protruding from the end surface of the orientation flat 511 of the first large size substrate 500a. Can do.

  The aspect of the present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. It is included in the range. Moreover, it can also implement with the following forms.

(Modification 1)
As described above, the present invention is not limited to cutting the region of the second large substrate 500b that protrudes from the orientation flat 511 of the first large substrate 500a (cut along the line of the end face of the orientation flat 511), as shown in FIG. It may be cut into pieces. FIG. 14 is a schematic diagram illustrating a manufacturing method of a liquid crystal device according to a modification in order of processes. The method for manufacturing the liquid crystal device 100 shown in FIG. 14 differs from the above-described embodiment in that the portion of the second large substrate 500b that cuts the region inside the end surface of the orientation flat 511 is different. Hereinafter, different parts will be described.

  In the step shown in FIG. 14A, a large substrate 500 is placed on a stage (not shown). Next, in the step shown in FIG. 14B, the region including the notch 512 in the second large substrate 500b is cut. Specifically, a region on the center side of the large substrate 500 is cut from the end face of the orientation flat 511 of the first large substrate 500a. In FIG. 14C, the large substrate 500 is positioned. Specifically, the end surface of the orientation flat 511 is pressed against the positioning pins 513 (513a, 513b) arranged on the stage.

  According to this method, since the size of the second large-sized substrate 500b is made smaller than the shape of the first large-sized substrate 500a in the portion of the orientation flat 511 (because the inner side is cut from the end face of the orientation flat 511), there is a variation in cutting. Even if it occurs, the end surface of the orientation flat 511 of the first large substrate 500a and the positioning pins 513a and 513b can be reliably brought into contact with each other.

  Further, as shown in FIG. 15, the large substrate 500 of the above modification may be turned upside down and positioned by pressing the end surface of the orientation flat 511 of the first large substrate 500a against the positioning pins 513.

(Modification 2)
As described above, the first large substrate 500a is not limited to the orientation flat 511 and the second large substrate 500b is provided with the notch 512. The first large substrate 500a is provided with the notch 512, and the second The large flat substrate 500b may be provided with an orientation flat 511. In this case, positioning can be performed by cutting the region of the first large substrate 500a that projects from the end face of the orientation flat 511.

(Modification 3)
As described above, the present invention is not limited to the transmissive liquid crystal device 100 but may be applied to a reflective liquid crystal device.

  3a ... scanning line, 3b ... capacitance line, 3c ... lower light shielding layer, CNT1 to CNT4 ... contact hole, 6a ... data line, 10 ... element substrate, 10a ... first substrate, 11a ... underlying insulating layer, 11b ... first DESCRIPTION OF SYMBOLS 1 interlayer insulation layer, 11c ... 2nd interlayer insulation layer, 11d ... 3rd interlayer insulation layer, 11g ... Gate insulation layer, 14 ... Sealing material, 15 ... Liquid crystal layer, 16 ... Capacitance element, 16a ... 1st capacitance electrode, 16b 2nd capacitance electrode 16c Dielectric film 18 Light-shielding film 20 Counter substrate 20a Second substrate 22 Data line drive circuit 24 Scan line drive circuit 25 Inspection circuit 26 Vertical conduction portion, 27... Pixel electrode, 28 and 32... Orientation film, 29 .. wiring, 30... TFT, 30 a... Semiconductor layer, 30 c... Channel region, 30 d. 30g ... 30 s... Data line side source / drain region, 30 s 1... Data line side LDD region, 31. Counter electrode, 33 .. insulating film, 35 .. external connection terminal, 100... Liquid crystal device, 500. First large substrate as one substrate, 500b Second large substrate as a second substrate, 501 Effective chip area, 502 Dummy chip area, 511 Orientation flat, 512 Notch, 513 (513a, 513b, 513c) Positioning pin, 521... First cut portion, 522... First tape, 522 a .. back surface, 523... First separation surface, 524... First separation groove, 525. ... 2nd notch part, 542 ... 2nd separation surface, 1000 ... Projection type display apparatus, 1100 ... Polarized illumination apparatus, 1101 ... Lamp unit, 1102 Integrator lens 1103. Polarization conversion element 1104 1105 Dichroic mirror 1106 1107 1108 Reflection mirror 1201 1202 1203 1204 1205 Relay lens 1206 Cross dichroic prism 1207 Projection lens 1210 , 1220, 1230 ... Liquid crystal light valve, 1300 ... Screen.

Claims (3)

Bonding the first substrate provided with the orientation flat and the second substrate provided with the notch;
Cutting a region including the notch of the second substrate protruding from a position where the orientation flat of the first substrate is provided;
A method for manufacturing an electro-optical device. A method of manufacturing the electro-optical device according to claim 1,
In the step of cutting the region including the notch of the second substrate, a region inside the end surface of the orientation flat of the first substrate is cut. A method of manufacturing the electro-optical device according to claim 1 or 2,
After the step of cutting the region including the notch, the step of positioning the pasted first substrate and the second substrate,
In the positioning step, two positioning pins are arranged on a portion contacting the orientation flat, and one positioning pin is arranged on a portion contacting the outer periphery of the first substrate and the second substrate excluding the orientation flat. Manufacturing method of electro-optical device.

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