JP2015211087A - Power semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power semiconductor module which can correctly detect the maximum temperature of an IGBT even in a structure where a temperature detection element is not arranged in the central part of an element substrate.SOLUTION: A power semiconductor module comprises: a temperature sense diode 408, an anode electrode pad 406 and a cathode electrode pad 407 which are arranged in a region 411 on one side edge of an element substrate 401; and a conductor plate 318 fastened to emitter electrodes 405A, 405B of an IGBT 155 and an anode electrode of a diode 156. At least a part of the temperature sense diode 408, and the anode electrode pad 406 and the cathode electrode pad 407 are arranged outside one side of the conductor plate and have no region overlapping the conductor plate 318.

Description

  The present invention relates to a power semiconductor module, and more particularly to a power semiconductor module suitable for an inverter circuit or the like.

  In a power semiconductor module having a switching element such as an insulated gate bipolar transistor (hereinafter referred to as IGBT), an overtemperature protection function for protecting a thermal breakdown due to heat generated by the switching element is employed. The overtemperature protection function is a function of detecting the temperature of the switching element and controlling the driving of the switching element when the temperature rises above a certain level.

If a temperature sensor that detects the temperature of the switching element is attached outside the semiconductor substrate on which the switching element is formed, a time lag occurs between the real temperature of the switching element and the temperature detected by the temperature sensor. It is not preferable.
Therefore, there is a semiconductor device in which a temperature sensor is provided on a semiconductor substrate on which a switching element is formed. The temperature detection of the semiconductor substrate by the temperature sensor needs to detect the temperature of the highest temperature region in the semiconductor substrate. For this reason, as an example of such a semiconductor device, it is known to provide a structure in which a free area is provided in the center of a switching element formed on a semiconductor substrate and a temperature sensor is provided in this free area. In this structure, the emitter region of the IGBT constituting the switching element is formed in a C shape with a part of the annular shape cut out, and the anode region of the temperature detection diode is formed in the empty region in the center of the C shape. A cathode region is provided (see, for example, Patent Document 1).

JP-A-6-342876

  In the semiconductor device described in Patent Document 1, the connection wiring that connects each of the anode electrode and the cathode electrode provided in the central portion of the semiconductor substrate to the connection terminal provided in the peripheral portion of the semiconductor substrate becomes long. In the region where the connection wiring is formed, it is difficult to dispose a heat radiating conductor plate, and the heat radiating area is reduced accordingly. In order to secure the necessary heat dissipation, the area of the semiconductor substrate cannot be reduced, which has been an obstacle to miniaturization.

(1) A power semiconductor module of the present invention includes an insulated gate transistor having an emitter electrode, a collector electrode, and a gate electrode, a temperature detection element, and a sensor electrode pad connected to the temperature detection element. An element substrate in which an electrode pad and a sensor electrode pad are formed on one surface and a collector electrode is formed on the other surface; a diode in which an anode electrode is formed on one surface and a cathode electrode is formed on the other surface; and an insulated gate transistor A first conductor member electrically connected to the anode electrode of the diode and the anode electrode of the diode, and a second conductor member electrically connected to the collector electrode of the insulated gate transistor and the cathode electrode of the diode. The temperature detection element and the sensor electrode pad are disposed in a predetermined region along one side of the element substrate. The second conductor member is joined to the other surface of the element substrate and the other surface of the diode so as to allow heat conduction. The first conductor member is joined to one surface of the insulated gate transistor so as to allow heat conduction. The first conductor member is arranged such that at least a side portion of a region corresponding to a predetermined region of the element substrate is located on the inner side of one side of the element substrate so as not to overlap at least a part of the temperature detection element and the sensor electrode pad. It is installed.
(2) The present invention also includes the following power semiconductor modules. That is, it has a first electrode for input signal, a second electrode for output signal, and a third electrode for control signal, and converts the input signal of the first electrode based on the control signal applied to the third electrode. A switching element for outputting an output signal from the second electrode; an element substrate on which the switching element is formed; a first conductor plate bonded to the first electrode exposed on one surface side of the element substrate; A second conductor plate joined to the second electrode exposed on the surface side; a temperature detecting element provided at the periphery of the element substrate for detecting the temperature of the switching element; provided on one surface of the element substrate for the temperature detecting element A power semiconductor module provided on one surface of the element substrate and having an electrode pad for a third electrode, wherein at least the first conductor plate is an element formation region of the element substrate provided with the temperature detection element And do not overlap in plan view It is Guo shape.

  According to the present invention, the length of the wiring connecting the temperature detection element and the sensor electrode pad is shortened, and the area around the wiring can be reduced. As a result, the area of the element substrate can be reduced, and as a result, the power semiconductor module can be reduced in size.

It is a control block diagram of the vehicle which mounted the power semiconductor module by this embodiment. It is a power converter circuit of the power semiconductor module by this embodiment. FIG. 3A is a cross-sectional view of the power semiconductor module according to the present embodiment, and FIG. 3B is an external perspective view of the power semiconductor module according to the present embodiment. 4A is a cross-sectional view of the power semiconductor module shown in FIG. 3A excluding the molding material, and FIG. 4B is the power semiconductor module shown in FIG. 3B. FIG. 4C is an exploded perspective view of the power semiconductor module shown in FIG. 4B, and FIG. 4D is a power semiconductor module according to the present embodiment. It is a circuit diagram which shows an example of this circuit. 5A and 5B are explanatory diagrams of current paths of the power semiconductor module according to the present embodiment. 6A is a perspective view of an auxiliary mold body of the power semiconductor module illustrated in FIGS. 4A to 4C, and FIG. 6B is an auxiliary illustrated in FIG. 6A. 6C is a side view of the mold body, FIG. 6C is a cross-sectional view taken along the line VIc-VIc in FIG. 6B, and FIG. 6D is an internal perspective view of the auxiliary mold body in FIG. It is. 7A to 7C are cross-sectional views for explaining the method for molding the power semiconductor module according to the present embodiment. FIG. 8A is a perspective view of a module primary sealing body 300 </ b> A in which a first sealing resin 350 is primarily sealed in FIG. 4B, which constitutes an upper and lower arm series circuit with a plurality of power semiconductor elements and conductor plates. FIG. 8B is an exploded cross-sectional view of the power semiconductor module 300. 9A to 9D are cross-sectional views for explaining a method for assembling the power semiconductor module according to the present embodiment. FIG. 10A and FIG. 10B are schematic cross-sectional views for explaining a method of assembling a water channel to the power semiconductor module according to the present invention. FIG. 11 is a layout diagram of an element substrate having electrodes of upper and lower arms IGBTs 155 and 157 and a plurality of types of electrode pads. It is the XII-XII sectional view taken on the line in FIG. It is a layout diagram of an element substrate block in which a conductor plate is fixed to one surface and the other surface of the element substrate. FIG. 14 is a temperature distribution diagram by simulation of the element substrate block illustrated in FIG. 13. It is typical sectional drawing for demonstrating the highest temperature area | region of an element substrate. FIG. 6 is a layout diagram of electrodes and electrode pads of an element substrate as Embodiment 2 of the power semiconductor module of the present invention. FIG. 17 is a layout diagram of an element substrate block including the element substrate illustrated in FIG. 16. It is a layout figure of the electrode and electrode pad of an element substrate as Embodiment 3 of the power semiconductor module of the present invention. It is a layout figure of the electrode and electrode pad of an element substrate as Embodiment 4 of the power semiconductor module of the present invention.

Embodiment 1
[An example of a hybrid vehicle system equipped with a power semiconductor module]
The power semiconductor module of the present invention will be described in detail below with reference to the drawings. The power semiconductor module according to the embodiment of the present invention is applicable as a power conversion device for a hybrid vehicle or a pure electric vehicle. First, a representative example of a control configuration and a circuit configuration of a power conversion device when the power semiconductor module of the present invention is applied to a power conversion device of a hybrid vehicle will be described with reference to FIGS. 1 and 2.

  The power conversion device using the power semiconductor module according to the embodiment of the present invention is particularly suitable for use in a vehicle-mounted power conversion device for a rotating electrical machine drive system mounted on an automobile. In the following, an inverter device for driving a vehicle, which is used in an electric vehicle system for driving a vehicle and has a very severe mounting environment or operational environment, will be described as an example. A vehicle drive inverter device is provided in a vehicle drive electrical system as a control device for controlling the drive of a vehicle drive motor, and a DC power supplied from an onboard battery or an onboard power generator constituting an onboard power source is a predetermined AC power. Then, the AC power obtained is supplied to the vehicle drive motor to control the drive of the vehicle drive motor. Further, since the vehicle drive motor also has a function as a generator, the vehicle drive inverter device also has a function of converting AC power generated by the vehicle drive motor into DC power according to the operation mode. ing. The converted DC power is supplied to the on-vehicle battery.

  Note that the configuration of the present embodiment is optimal as a power converter for driving a vehicle such as an automobile or a truck, but can be applied to other power converters. For example, power converters for trains, ships, airplanes, etc., industrial power converters used as control devices for motors that drive factory equipment, or motors that drive household solar power generation systems and household appliances The present invention can also be applied to a household power conversion device that is used in other control devices.

  FIG. 1 shows a control block of a hybrid vehicle. A hybrid vehicle (hereinafter referred to as HEV) 110 includes two vehicle drive systems. One of them is an engine drive system that uses an engine 120 that is an internal combustion engine as a power source. The other is a rotating electrical machine drive system using a motor generator 192 or 194 as a power source. In the rotating electrical machine drive system, motor generators 192 and 194 are provided as drive sources, and synchronous generators or induction machines are used as the motor generators 192 and 194. The motor generators 192 and 194 can be controlled as motors or generators. Also works. Based on these functions, this specification refers to a motor generator. However, these are typical usage examples, and the motor generator 192 or 194 may be used only as a motor or only as a generator. An inverter described below The motor generator 192 or 194 is controlled by the circuits 140 and 142. In this control, the motor generator 192 or 194 operates as a motor or a generator.

  Naturally, the present invention can be applied to the HEV shown in FIG. 1, but can also be applied to a pure electric vehicle that does not use an engine drive system. The HEV rotating electrical machine drive system and the drive system of a pure electric vehicle have the same basic operation and configuration in the parts related to the present invention. In order to avoid complexity, the following is representative of HEV. explain.

  A front wheel axle 114 provided with a pair of front wheels 112 is rotatably supported at the front portion of the vehicle body. The first embodiment employs a so-called front wheel drive system in which the main wheel driven by power is the front wheel 112 and the driven wheel to be rotated is the rear wheel, but the reverse, that is, the rear wheel drive system is employed. It doesn't matter.

  The front wheel axle 114 is provided with a differential gear (hereinafter referred to as DEF) 116, and the front wheel axle 114 is mechanically connected to the output side of the DEF 116. The output shaft of the transmission 118 is mechanically connected to the input side of the front wheel side DEF 116, and the front wheel side DEF 116 receives the torque shifted by the transmission 118 and distributes it to the left and right front wheel axles 114. The output side of the motor generator 192 is mechanically connected to the input side of the transmission 118. The output side of the engine 120 or the output side of the motor generator 194 is mechanically connected to the input side of the motor generator 192 via the power distribution mechanism 122. Motor generators 192 and 194 and power distribution mechanism 122 are housed inside the casing of transmission 118.

  The motor generators 192 and 194 may be induction machines, but in the first embodiment, a synchronous machine having a permanent magnet in the rotor, which is more excellent in efficiency improvement, is used. The AC power supplied to the stator windings of the stator of the induction machine and the synchronous machine is controlled by the inverter circuits 140 and 142, so that the motor generators 192 and 194 operate as motors or generators and their characteristics. Be controlled. A battery 136 is connected to the inverter circuits 140 and 142, and power can be exchanged between the battery 136 and the inverter circuits 140 and 142.

  In the first embodiment, the HEV 110 includes two parts, a first motor generator unit including a motor generator 192 and an inverter circuit 140, and a second motor generator unit including a motor generator 194 and an inverter circuit 142, depending on the operation state. I use them properly. That is, in the situation where the vehicle is driven by the power from the engine 120, when assisting the driving torque of the vehicle, the second motor generator unit is operated by the power of the engine 120 as a power generation unit to generate power, and the power generation The first motor generator unit is operated as an electric unit by the electric power obtained by the above. Further, when assisting the vehicle speed in the same situation, the first motor generator unit is operated by the power of the engine 120 as a power generation unit to generate power, and the second motor generator unit is generated by the electric power obtained by the power generation. Operate as an electric unit.

  Further, in the first embodiment, the vehicle can be driven only by the power of the motor generator 192 by operating the first motor generator unit as an electric unit by the electric power of the battery 136. Furthermore, in this embodiment, the battery 136 can be charged by operating the first motor generator unit or the second motor generator unit as a power generation unit by the power of the engine 120 or the power from the wheels to generate power.

  The battery 136 is also used as a power source for driving an auxiliary motor 195. Examples of the auxiliary machine include a motor for driving a compressor of an air conditioner or a motor for driving a hydraulic pump for control. The DC power supplied from the battery 136 to the auxiliary converter 43 is converted for the auxiliary machine. It is converted into AC power by the machine 43 and supplied to the motor 195. The auxiliary converter 43 has the same function as the inverter circuits 140 and 142, and controls the phase, frequency, and power of the alternating current supplied to the motor 195. For example, the motor 195 generates torque by supplying AC power having a leading phase with respect to the rotation of the rotor of the motor 195. On the other hand, by generating the delayed phase AC power, the motor 195 acts as a generator, and the motor 195 is operated in a regenerative braking state. The control function of the auxiliary converter 43 is the same as the control function of the inverter circuits 140 and 142. Since the capacity of the motor 195 is smaller than the capacity of the motor generators 192 and 194, the maximum conversion power of the auxiliary converter 43 is smaller than the inverter circuits 140 and 142, but the circuit configuration of the auxiliary converter 43 is fundamental. The circuit configurations of the inverter circuits 140 and 142 are the same.

  In the embodiment of FIG. 1, the constant voltage power supply is omitted. Each control circuit and various sensors operate with electric power from a constant voltage power source (not shown). This constant voltage power supply is, for example, a 14 volt system power supply, and is equipped with a 14 volt system such as a lead battery, and in some cases a 24 volt system battery, and either the positive electrode or the negative electrode is connected to the vehicle body. Used as a power supply conductor for power supplies.

  The inverter circuits 140 and 142 and the auxiliary converter 43 and the capacitor module 500 are in an electrical close relationship. Furthermore, there is a common point that measures against heat generation are necessary. It is also desired to make the volume of the device as small as possible. From these points, the power conversion device 200 described in detail below incorporates inverter circuits 140 and 142, an auxiliary converter 43, and a capacitor module 500 in the casing of the power conversion device 200. This configuration can reduce the size. Furthermore, there is an effect that the number of harnesses can be reduced or radiation noise can be reduced. This effect leads to downsizing or improved reliability. It also leads to improved productivity. In addition, the connection circuit between the capacitor module 500 and the inverter circuits 140 and 142 and the auxiliary converter 43 is shortened, or the structure described below can be realized, the inductance can be reduced, and as a result, the spike voltage can be reduced. . Furthermore, the structure described below can reduce heat generation and improve heat dissipation efficiency.

[Configuration of power converter]
The circuit configuration of the power conversion device 200 will be described with reference to FIG. As shown in FIG. 1, the power conversion device 200 includes inverter circuits 140 and 142, an auxiliary converter 43, and a capacitor module 500. The auxiliary machine converter 43 is an inverter device that controls an auxiliary machine drive motor for driving auxiliary machines included in the vehicle. The auxiliary converter 43 is, for example, a DC-DC converter that is a step-up or step-down circuit that further boosts the supply voltage of the battery 136 in FIG. 1 or steps down the supply voltage from the high voltage to the supply voltage of the battery 136. Also good.

  The inverter circuits 140 and 142 include a plurality of power semiconductor modules 300 having a double-sided cooling structure, three in this embodiment, and a three-phase bridge circuit is configured by connecting the power semiconductor modules 300. . When the current capacity is large, the power semiconductor modules 300 are further connected in parallel, and these parallel connections are made corresponding to each phase of the three-phase inverter circuit, so that it is possible to cope with an increase in current capacity. Further, as described below, by connecting the semiconductor elements built in the power semiconductor module 300 in parallel, it is possible to cope with an increase in power without connecting the power semiconductor modules 300 in parallel.

  As will be described later, each power semiconductor module 300 houses a power semiconductor element and its connection wiring in a module case 304 shown in FIG. In the first embodiment, the module case 304 shown in FIG. 3 includes a can-like heat-dissipating metal base having an opening in which an opening is formed. The module case 304 has an opposing heat dissipation base 307, and in this embodiment covers five surfaces other than the surface having the opening. In order to cover the above five surfaces, the outer walls made of the same material having no joints are formed so as to connect the both surfaces continuously with both heat radiation bases 307 having the widest area. An opening is formed in one surface of the can-shaped module case 304 having a shape close to a rectangular parallelepiped, and the power semiconductor element is inserted into the inside through the opening and held therein.

  The inverter circuits 140 and 142 are driven and controlled by two driver circuits provided in the control unit. In FIG. 2, the two driver circuits are collectively displayed as a driver circuit 174. Each driver circuit is controlled by the control circuit 172, and the control circuit 172 generates a switching signal for controlling the switching timing of the power semiconductor element.

The inverter circuit 140 and the inverter circuit 142 have the same basic circuit configuration and basically the same control method and operation, and the inverter circuit 140 will be described as an example.
The inverter circuit 140 includes a three-phase bridge circuit as a basic configuration. Specifically, the inverter circuit 140 operates as a U phase (indicated by a symbol U1), a V phase (indicated by a symbol V1), or a W phase (indicated by a symbol W1). Each arm circuit is connected in parallel to the positive and negative conductors for transmitting DC power. In addition, each arm circuit which operate | moves as U phase, V phase, and W phase of the inverter circuit 142 is made to correspond to the inverter circuit 140, and is shown as U2, V2, and W2.

  Each phase arm circuit is composed of an upper and lower arm series circuit in which an upper arm circuit and a lower arm circuit are connected in series, and each phase upper arm circuit is connected to a conductor on the positive side, and each phase lower arm circuit Are respectively connected to the conductors on the negative electrode side. AC power is generated at the connection between the upper arm circuit and the lower arm circuit, and the connection between the upper arm circuit and the lower arm circuit of each upper and lower arm series circuit is connected to the AC terminal 321 of each power semiconductor module 300. The AC terminal 321 of each phase power semiconductor module 300 is connected to the AC output terminal of the power converter 200, and the generated AC power is supplied to the stator winding of the motor generator 192 or 194. Since each power semiconductor module 300 of each phase has basically the same structure and basically the same operation, the power module U1 that is the U-phase power semiconductor module 300 will be described as a representative.

  In this embodiment, the upper arm circuit includes an upper arm IGBT (insulated gate bipolar transistor) 155 and an upper arm diode 156 as power semiconductor elements for switching. In this embodiment, the lower arm circuit includes a lower arm IGBT 157 and a lower arm diode 158 as power semiconductor elements for switching. The DC positive terminal 315B and the DC negative terminal 319B of each upper and lower arm series circuit are respectively connected to the capacitor connecting DC terminals of the capacitor module 500, and the AC power generated at the AC terminal 321 is electrically supplied to the motor generator 192 or 194. Supplied.

The IGBTs 155 and 157 perform a switching operation in response to a drive signal output from one or the other driver circuit of the driver circuit 174, and convert DC power supplied from the battery 136 into three-phase AC power. To do. The converted electric power is supplied to the stator winding of the motor generator 192. Since the V phase and the W phase have substantially the same circuit configuration as the U phase, the reference numerals 155, 157, 156, and 158 are omitted.
The power semiconductor module 300 of the inverter circuit 142 has the same configuration as that of the inverter circuit 140, and the auxiliary converter 43 has the same configuration as the inverter circuit 142, and the description thereof is omitted here. To do.

  In the first embodiment, the upper arm IGBT 155 and the lower arm IGBT 157 are illustrated as power semiconductor elements for switching. The upper arm IGBT 155 and the lower arm IGBT 157 include a collector electrode, an emitter electrode (emitter electrode pad), and a gate electrode (gate electrode pad). An upper arm diode 156 and a lower arm diode 166 are electrically connected between the collector electrode and the emitter electrode of the upper arm IGBT 155 and the lower arm IGBT 157 as illustrated. The upper arm diode 156 and the lower arm diode 158 include two electrodes, a cathode electrode and an anode electrode, and the cathode is arranged such that the direction from the emitter electrode to the collector electrode of the upper arm IGBT 155 or the lower arm IGBT 157 is the forward direction. The electrodes are electrically connected to the collector electrodes of the upper arm IGBT 155 and the lower arm IGBT 157, and the anode electrodes are electrically connected to the emitter electrodes of the upper arm IGBT 155 and the lower arm IGBT 157, respectively. As the power semiconductor element, a MOSFET (metal oxide semiconductor field effect transistor) may be used. In this case, the upper arm diode 156 and the lower arm diode 158 are unnecessary.

  The control circuit 172 generates a timing signal for controlling the switching timing of the upper arm IGBT 155 and the lower arm IGBT 157 based on input information from a vehicle-side control device or sensor (for example, a current sensor 180). Based on the timing signal output from the control circuit 172, the driver circuit 174 generates a drive signal for switching the upper arm IGBT 155 and the lower arm IGBT 157.

  The control circuit 172 includes a microcomputer (hereinafter referred to as a “microcomputer”) for calculating the switching timing of the upper arm IGBT 155 and the lower arm IGBT 157. The microcomputer inputs the target torque value required for the motor generator 192, the current value supplied from the upper and lower arm series circuit to the stator winding of the motor generator 192, and the magnetic pole position of the rotor of the motor generator 192. Input as information. The target torque value is based on a command signal output from a host control device (not shown). The current value is detected based on the detection signal output from the current sensor 180. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) provided in the motor generator 192. In the present embodiment, the case of detecting the current values of three phases will be described as an example, but the current values of two phases may be detected.

  The microcomputer in the control circuit 172 calculates the d and q axis current command values of the motor generator 192 based on the target torque value, the calculated d axis and q axis current command values, and the detected d axis. The voltage command value for the d-axis and q-axis is calculated based on the difference from the current value for q and q-axis. Further, the microcomputer converts the calculated d-axis and q-axis voltage command values into U-phase, V-phase, and W-phase voltage command values based on the detected magnetic pole positions. Then, the microcomputer generates a pulse-like modulated wave based on a comparison between the fundamental wave (sine wave) and the carrier wave (triangular wave) based on the voltage command values of the U phase, V phase, and W phase, and the generated modulation wave The wave is output to the driver circuit 174 as a PWM (pulse width modulation) signal.

  When driving the lower arm, the driver circuit 174 amplifies the PWM signal, and outputs the amplified PWM signal as a drive signal to the gate electrode of the corresponding lower arm IGBT 157. On the other hand, when driving the upper arm, the driver circuit 174 amplifies the PWM signal after shifting the level of the reference potential of the PWM signal to the level of the reference potential of the upper arm, and uses this as a drive signal. Output to the gate electrode of the upper arm IGBT 155. As a result, the upper arm IGBT 155 and the lower arm IGBT 157 perform a switching operation based on the input drive signal.

In addition, the control unit performs abnormality detection (overcurrent, overvoltage, overtemperature, etc.) to protect the upper and lower arm series circuits. For this reason, sensing information is input to the control unit. For example, information on the current flowing through the emitter electrodes of the upper arm IGBT 155 and the lower arm IGBT 157 is input to the corresponding driver circuit 174 from the signal emitter electrode terminal of each arm. As a result, the driver circuit 174 detects overcurrent, and when an overcurrent is detected, the switching operation of the corresponding upper arm IGBT 155 and lower arm IGBT 157 is stopped, and the corresponding upper arm IGBT 155 and lower arm IGBT 157 are overcurrent. Protect from.
Information on the temperature of the upper and lower arm series circuit is input to the microcomputer from a temperature sensor (not shown) provided in the upper and lower arm series circuit. Further, voltage information on the DC positive side of the upper and lower arm series circuit is input to the microcomputer. The microcomputer performs over-temperature detection and over-voltage detection based on the information, and when over-temperature or over-voltage is detected, the switching operation of all the upper arm IGBT 155 and the lower arm IGBT 157 is stopped, and the upper and lower arm series circuits are configured. Protect from over temperature or over voltage.

  The conduction and cut-off operations of the upper arm IGBT 155 and the lower arm IGBT 157 of the inverter circuit 140 are switched in a certain order, and the current generated in the stator winding of the motor generator 192 at this switching flows through a circuit including the diodes 156 and 158. In the power conversion device 200 of the first embodiment, one upper and lower arm series circuit is provided for each phase of the inverter circuit 140. As described above, the output of each phase of the three-phase AC output to the motor generator is generated. The circuit may be a power conversion device having a circuit configuration in which two upper and lower arm series circuits are connected in parallel to each phase.

A DC connector 138 (see FIG. 1) provided in each inverter circuit 140 or 142 is connected to a laminated conductor plate 700 (see FIGS. 2 and 14) composed of a positive conductor plate and a negative conductor plate.
The laminated conductor board 700 is a laminated wiring board having a three-layer structure in which an insulating sheet (not shown) is sandwiched between a positive electrode side conductor board 702 and a negative electrode side conductor board 704 made of a conductive plate material wide in the power module arrangement direction. It is composed. The positive electrode side conductor plate 702 and the negative electrode side conductor plate 704 of the multilayer conductor plate 700 are respectively connected to the positive electrode conductor plate 507 and the negative electrode conductor plate 505 included in the multilayer wiring board 501 provided in the capacitor module 500. The positive electrode conductor plate 507 and the negative electrode conductor plate 505 are also made of a conductive plate material wide in the power module arrangement direction, and constitute a three-layered laminated wiring board sandwiching an insulating sheet (not shown).

  A plurality of capacitor cells 514 are connected in parallel to the capacitor module 500, the positive electrode side of the capacitor cell 514 is connected to the positive electrode conductor plate 507, and the negative electrode side of the capacitor cell 514 is connected to the negative electrode conductor plate 505. Capacitor module 500 forms a smoothing circuit for suppressing fluctuations in DC voltage caused by switching operations of upper arm IGBT 155 and lower arm IGBT 157.

  The multilayer wiring board 501 of the capacitor module 500 is connected to the input multilayer wiring board 230 connected to the DC connector 138 of the power converter 200. The input laminated wiring board 230 is also connected to an inverter device in the auxiliary converter 43. A noise filter is provided between the input multilayer wiring board 230 and the multilayer wiring board 501. The noise filter includes two capacitors that connect the ground terminal of the housing 12 and each DC power line, and constitutes a Y capacitor for common mode noise countermeasures.

  In the configuration of the power conversion device shown in FIG. 2, the capacitor module 500 is connected to a terminal (not shown) connected to the DC connector 138 for receiving DC power from the DC power source 136, and to the inverter circuit 140 or the inverter circuit 142. Therefore, the adverse effect of noise generated by the inverter circuit 140 or the inverter circuit 142 on the DC power source 136 can be reduced. This configuration eventually increases the smoothing effect.

  Moreover, since the laminated conductor plate is used for the connection between the capacitor module 500 and each power semiconductor module 300 as described above, the inductance for the current flowing through the upper and lower arm series circuit of each power semiconductor module 300 can be reduced, The voltage that jumps up due to the sudden change in the current can be reduced.

[Description of Power Semiconductor Module 300]
A detailed configuration of the power semiconductor module 300 used in the inverter circuit 140 and the inverter circuit 142 will be described with reference to FIGS. FIG. 3A is a cross-sectional view of the power semiconductor module 300 of the first embodiment, and FIG. 3B is a perspective view of the power semiconductor module 300 of the present embodiment. In the following description, a DC positive terminal, a DC negative terminal,

  As shown in FIG. 4 (B), FIG. 4 (C) or FIG. 5 (B), the power semiconductor elements constituting the upper and lower arm series circuit are sandwiched from both sides by the conductor plates 315 and 318 or the conductor plates 316 and 319. Auxiliary mold body 600, which is fixed by and integrally molded with signal wiring, is assembled to the conductor plate. These are sealed with a first sealing resin 350 (see FIG. 3A) with the heat radiation surface of the conductor plate exposed, and an insulating sheet 333 is thermocompression bonded thereto. The whole is inserted into the module case 304, and the insulating sheet 333 and the inner surface of the module case 304 which is a CAN type cooler are thermocompression bonded. A second sealing resin 351 (see FIG. 3A) is filled in the gap remaining inside the module case 304. Further, a direct current positive electrode wiring 315A and a direct current negative electrode wiring 319A are provided as direct current bus bars for connection to the capacitor module 500, and a direct current positive electrode terminal 315B and a direct current negative electrode terminal 319B are formed at the front ends thereof. An AC wiring 320 is provided as an AC bus bar for supplying AC power to the motor generator 192 or 194, and an AC terminal 321 is formed at the tip thereof. In this embodiment, these wirings 315A, 319A, and 320 are provided on the respective conductor plates 315, 319, and 316, are integrally formed, and external signal terminals 325U and 325L to be connected to the driver circuit 174 are provided. The auxiliary mold body 600 is insert-molded.

  By using a structure in which the insulating sheet 333 is used to fix the conductor plate supporting the element and the inside of the module case 304 as described above, a manufacturing method described later with reference to the drawings becomes possible, and productivity is improved. Will improve. Further, the heat generated by the power semiconductor element can be efficiently transferred to the fins 305, and the cooling effect of the power semiconductor element is improved. Furthermore, it is possible to suppress the occurrence of thermal stress due to temperature change and the like, which is favorable for use in an inverter for a vehicle having a large temperature change.

The module case 304 is made of an aluminum alloy material such as Al, AlSi, AlSiC, Al-C, and the like, and has a can-type shape (hereinafter referred to as a CAN type) that is integrally formed with no joints. Here, the CAN type refers to a substantially rectangular parallelepiped shape having an insertion port 306 on a predetermined surface and having a bottom. The module case 304 has a structure in which no opening is provided except for the insertion port 306, and the outer periphery of the insertion port 306 is surrounded by a flange 304B.
From another viewpoint, as shown in FIG. 3B, the first and second heat dissipating surfaces having a surface wider than the other surfaces are arranged facing each other, and the first and second facing each other are arranged. The three sides of the heat radiating surface constitute a surface sealed with a narrower width than the heat radiating surface, and an opening is formed on the surface of the remaining one side. The above structure does not need to be an accurate rectangular parallelepiped, and the corners may be curved as shown in FIG. By having the metallic case having such a shape, even if the module case 304 is inserted into a flow path through which a cooling medium such as water or oil flows, a seal against the cooling medium can be secured by the flange 304B. It is possible to prevent the medium from entering the inside of the module case 304 and the terminal portion with a simple configuration. Further, on the outer wall of the module case 304, the fins 305 are uniformly formed on the opposed heat radiation base 307, and a curved portion 304A having an extremely thin thickness is formed on the outer periphery of the same surface. Since the curved portion 304A is extremely thin to such an extent that it can be easily deformed by pressurizing the fin 305, the module primary sealing body 300A (see FIGS. 8A and 9A) is inserted. Productivity after being improved.

  In the power semiconductor module 300, heat generated during operation of the power semiconductor element is diffused from both sides by the conductor plate and transmitted to the insulating sheet 333, and the heat dissipation base 307 formed in the module case 304 and the fins 305 provided in the heat dissipation base 307. Since heat is dissipated to the cooling medium, high cooling performance can be realized.

  4A is a cross-sectional view of the power semiconductor module shown in FIG. 3A excluding the molding material, and FIG. 4B is the power semiconductor module shown in FIG. 3B. FIG. 4C is an exploded perspective view of the power semiconductor module shown in FIG. 4B, and FIG. 4D is a power semiconductor module according to the present embodiment. FIG. 5A and 5B are explanatory diagrams of current paths of the power semiconductor module according to the present embodiment.

First, the arrangement of the power semiconductor element and the conductor plate will be described in association with the electric circuit.
The direct current positive electrode conductor plate 315 and the first alternating current conductor plate 316 are disposed in substantially the same plane. The direct current positive electrode conductor plate 315 includes a collector electrode formed on one surface of the upper arm IGBT 155 and one surface of the upper arm diode 156. The cathode electrode formed on the first AC conductor plate 316 is fixed to the collector electrode of the lower arm IGBT 157 and the cathode electrode of the lower arm diode 158 with a metal bonding material such as solder. It is fixed via 160.

  The second AC conductor plate 318 and the DC negative electrode plate 319 are arranged in substantially the same plane. The emitter electrode of the upper arm IGBT 155 and the anode electrode of the upper arm diode 156 are soldered or the like on the second AC conductor plate 318. The emitter electrode of the lower arm IGBT 157 and the anode electrode of the lower arm diode 158 are fixed to the DC negative electrode conductive plate 319 via the metal bonding material 160 such as solder.

  Each power semiconductor element is fixed to an element fixing portion provided on each conductor plate. Each power semiconductor element has a flat plate-like structure, and each electrode is formed on the front and back surfaces. Therefore, as shown in FIG. 4B, the DC positive conductor plate 315, the second AC conductor plate 318, and the first The alternating current conductor plate 316 and the direct current negative electrode conductor plate 319 are disposed so as to face each other through the IGBTs and the diodes, that is, substantially parallel to each other with the power semiconductor element interposed therebetween, and are in a stacked arrangement with the power semiconductor element interposed therebetween. The first AC conductor plate 316 and the second AC conductor plate 318 are connected via an intermediate electrode 159 (see FIG. 4D). By this connection, the upper arm circuit and the lower arm circuit are electrically connected to form an upper and lower arm series circuit.

The power semiconductor module will be described in more detail with reference to FIG.
The power semiconductor module according to the first embodiment includes two upper arms each composed of IGBT 155 and diode 156 shown in FIG. 4 and two lower arms each composed of IGBT 157 and diode 158. As shown in FIG. 4B, the two upper arm IGBTs 155 are formed on the element substrates 401U1 and 401U2, respectively, and the two lower arm IGBTs 155 are formed on the element substrates 401L1 and 401L2, respectively. The two upper arm diodes 156 are formed on a substrate different from the element substrates 401U1 and 401U2, and the two lower arm diodes 158 are formed on a substrate different from the element substrates 401L1 and 401L2.
In the present invention, there may be one upper arm and one lower arm, and the number of arms is not limited.

The collector electrodes of the upper arm IGBT 155 are formed on the other surfaces of the upper arm element substrates 401U1 and 401U2, that is, the inner surface of FIG. 4B, and one collector electrode is provided on each of the element substrates 401U1 and 401U2. The DC positive electrode conductor plate 315 is fixed through a metal bonding material 160 such as solder.
The emitter electrode of the upper arm IGBT 155 is formed on one surface of the upper arm element substrates 401U1 and 401U2, that is, the front surface of FIG. 4B, and one emitter electrode is formed on each emitter electrode of the element substrates 401U1 and 401U2. The second AC conductor plate 318 is fixed via a metal bonding material 160 such as solder.

The collector electrode of the lower arm IGBT 157 is formed on the other surface of the element substrates 401L1 and 401L2 for the lower arm, that is, the inner surface of FIG. 4B, and one collector electrode is provided for each of the collect electrodes of the element substrates 401L1 and 401L2. The first AC conductor plate 316 is fixed through a metal bonding material 160 such as solder.
Emitter electrodes are formed on one surface of the lower arm element substrates 40L1 and 401L2, that is, the front surface of FIG. 4B, and one DC negative electrode conductor plate is formed on each emitter electrode of the element substrates 401L1 and 401L2. 319 is fixed via a metal bonding material 160 such as solder.

The cathode electrodes of the two upper arm diodes 156 paired with the two upper arm IGBTs 155 are connected to one DC positive electrode conductive plate 315 to which the collector electrode of the upper arm IGBT 155 is bonded via a metal bonding material 160 such as solder. It is fixed. The cathode electrodes of the two lower arm diodes 158 paired with the two lower arm IGBTs 157 are connected to one first AC conductor plate 316 to which the collector electrode of the lower arm IGBT 157 is bonded via a metal bonding material 160 such as solder. It is fixed.
In addition, the anode electrodes of the two upper arm diodes 156 that are paired with the two upper arm IGBTs 155 are provided with a metal bonding material 160 such as solder on one second AC conductor plate 318 to which the emitter electrode of the upper arm IGBT 155 is bonded. It is fixed through. The anode electrodes of the two lower arm diodes 158 paired with the two lower arm IGBTs 157 are fixed to a single DC negative conductor plate 319 to which the emitter electrode of the lower arm IGBT 157 is bonded via a metal bonding material 160 such as solder. Has been.

  Adhesion between each electrode and each conductor plate is performed electrically and thermally using a metal bonding material 337 (see FIG. 8) such as a low-temperature sintered bonding material including a solder material, a silver sheet, and fine metal particles. Jointly. In each wiring and terminal, the DC positive electrode wiring 315A is formed integrally with the DC positive electrode conductor plate 315, and the DC positive electrode terminal 315B is formed at the tip thereof. The DC negative electrode wiring 319A has the same basic structure, and is formed integrally with the DC negative electrode conductor plate 319, and a DC negative electrode terminal 319B is formed at the tip thereof.

  Between the DC positive electrode wiring 315A and the DC negative electrode wiring 319A, an auxiliary mold body 600 formed of a resin material is interposed, and the DC positive electrode wiring 315A and the DC negative electrode wiring 319A are substantially parallel to each other in an opposed state. It has a shape extending in the opposite direction with respect to the position of the power semiconductor. The external signal terminals 325L and 325U are formed integrally with the auxiliary mold body 600, and extend toward the outside of the module in the same direction as the DC positive electrode wiring 315A and the DC negative electrode wiring 319A.

  As the resin material used for the auxiliary mold body 600, a thermosetting resin having an insulating property or a thermoplastic resin is suitable. Signal wiring is insert-molded in the auxiliary mold body 600. With such a structure, it is possible to ensure the insulation between the DC positive electrode wiring 315A and the DC negative electrode wiring 319A and the insulation between the signal wiring and each wiring board. This structure enables high-density wiring.

  Furthermore, the direct current positive electrode wiring 315A and the direct current negative electrode wiring 319A are arranged so as to face each other substantially in parallel, so that the current flowing instantaneously during the switching operation of the power semiconductor element is arranged so as to face the direct current positive electrode wiring 315A. The DC negative electrode wiring 319A has a structure in which the current flows in the opposite direction, and the magnetic fields generated by the currents flowing in the opposite directions cancel each other. This action can reduce the inductance. The effect of reducing the inductance will be described with reference to FIG. In FIG. 5A, the lower arm diode 158 is in a conductive state in a forward bias state. In this state, when the upper arm IGBT 155 is turned on, the lower arm diode 158 is reverse-biased and a recovery current caused by carrier movement passes through the upper and lower arms. At this time, the recovery current 100 shown in FIG. 5B flows through the conductor plates 315, 316, 318, and 319. First, the recovery current 100 flows through a DC positive terminal 315B arranged in parallel with the DC negative terminal 319B as shown by a dotted line, and then flows through a loop-shaped path formed by the respective conductor plates 315, 316, 318, 319. Then, the current flows again as shown by the solid line through the DC positive terminal 315B arranged in parallel with the DC negative terminal 319B. As a current flows through the loop-shaped path, an eddy current 101 flows in the heat dissipation base 307. Due to the magnetic field cancellation effect by the eddy current 101, the wiring inductance 102 in the loop-shaped path is reduced. Note that the closer the current path is to the loop shape, the greater the inductance reduction effect. In this embodiment, the loop-shaped current path flows through a path close to the terminal side of the conductor plate 315 as shown by a dotted line, passes through the semiconductor element, and flows through a path far from the terminal side of the conductor plate 318 as shown by a solid line. Thereafter, a path farther from the terminal side of the conductor plate 316 flows as shown by a dotted line, passes again through the semiconductor element, and flows along a path closer to the terminal side of the conductor plate 319 as shown by a solid line. In this manner, a loop-shaped circuit is formed by passing a path closer to or farther from the DC positive terminal 315B or the DC negative terminal 319B, and the heat dissipation base 307 is generated by the recovery current 100 flowing through the loop-shaped circuit. Eddy current 101 flows through The reluctance is reduced by canceling out the magnetic field of the eddy current 101 and the magnetic field of the recovery current 100.

[Description of auxiliary mold body 600]
6A is a perspective view of an auxiliary mold body of the power semiconductor module illustrated in FIGS. 4A to 4C, and FIG. 6B is an auxiliary illustrated in FIG. 6A. 6C is a side view of the mold body, FIG. 6C is a cross-sectional view taken along the line VIc-VIc in FIG. 6B, and FIG. 6D is an internal perspective view of the auxiliary mold body in FIG. It is.
FIGS. 7A to 7C are diagrams for explaining a method of molding the power semiconductor module 300 according to the present embodiment. The auxiliary mold body 600 is installed in the primary sealing mold of the power semiconductor module 300. It is sectional drawing which shows the state filled with resin.

  The structure of the auxiliary mold body 600 will be described with reference to the drawings. The auxiliary mold body 600 has the signal conductor 324 integrated by insert molding, and the signal conductor 324 extends from one of the sealing portions 601 of the auxiliary mold body 600 in the opposite direction to the power semiconductor element. External signal terminals 325U and 325L for connecting to a driver circuit 174 and the like for controlling the elements are formed. Internal signal terminals 326U and 326L are formed on the opposite side of the signal conductor 324. As will be described later, the internal signal terminals 326U and 326L are connected to electrodes and electrode pads (see FIG. 11 and the like) provided on the surface of the power semiconductor element by connection wires such as wires. The sealing portion 601 has a shape extending in a direction crossing the major axis of the shape of the DC positive electrode wiring 315A, the DC negative electrode wiring 319A, or the AC wiring 320, in this embodiment, substantially orthogonal. Yes. As shown in FIGS. 4 (B), 4 (C), and 5 (B), the auxiliary mold body 600 is arranged in the longitudinal direction of the wirings 315A, 319A, and 320 as in the case of the conductor plates 315, 316, 318, and 319. It extends in a direction across the axis, and its length is longer than the overall length of the conductor plates 315 and 316 arranged side by side, or the entire length of the conductor plates 319 and 320 arranged side by side, The conductor plates 315 and 316 arranged side by side or the conductor plates 319 and 320 arranged side by side are within the range of the length of the auxiliary mold body 600 in the lateral direction.

Each of the external signal terminals 325U and 325L of the signal conductor 324 inner-molded in the auxiliary mold body 600 is composed of five external signal terminals. The five external signal terminals include emitter external signal terminals 325U ₁ and 325L ₁ , mirror IGBT external signal terminals 325U ₂ and 325L ₂ , gate external signal terminals 325U ₃ and 325L ₃ , anode external signal terminals 325U ₄ and 325L ₄ , and cathode external Signal terminals 325U5 and 325L5 (see FIGS. 4B and 6A).

  As shown in FIG. 5B, FIG. 6A, and FIG. 6B, the wirings 315A, 602A to 602C of the auxiliary mold body 600 for fixing the wirings 315A, 319A, 320 are respectively connected. Recesses for fitting with the bus bars 319A and 320 are formed. Each wiring is positioned by inserting each wiring into each recess. As a result, the wirings 315A, 319A, and 320 can be fitted and assembled to improve mass productivity, and the wiring insulating portion 608 is interposed between the DC positive electrode wiring 315A and the DC negative electrode wiring 319A to provide insulation. Can be ensured and arranged opposite to each other in parallel. In this opposed arrangement, if there is a deviation, the magnetic field canceling effect is not effectively exhibited, which hinders a reduction in inductance. In addition, a mold pressing surface 604 is formed on the sealing portion 601, and a plurality of resin leakage prevention protrusions 605 are formed around the outer periphery in the longitudinal direction. The wiring insulating portion 608 has a plate shape in order to ensure a sufficient insulation distance between the DC positive electrode wiring 315A and the DC negative electrode wiring 319A.

  Further, as shown in FIGS. 3A and 8B, it is desirable to seal each power semiconductor element and each conductor plate of the power semiconductor module 300 with the first sealing resin 350. In the stopping process, as shown in FIG. 7, first, the auxiliary mold body 600 on which the wirings 315A, 319A, 320 and the signal conductor 324 are supported is formed into a mold 900 preheated to about 150 to 180 ° C. as shown in FIG. Insert like this. In the first embodiment, the conductor plates 315, 316, 318, and 319 and the wirings 315A, 319A, and 320 are firmly connected to each other. A power semiconductor element is installed at a predetermined position. Therefore, productivity is improved and reliability is improved.

  Next, as shown in FIG. 7B, a first sealing resin material 910 is injected under pressure from the gate 904, and the wirings 315A, 319A and 320, the power semiconductor elements, and the conductor plates 315 and the like. The space between 316, 318, and 319 is filled and closed by the lower mold 901, the upper mold 902, and the auxiliary mold body 600, and the space is filled with the first sealing resin material 910. That is, when the first sealing resin material 910 is injected from the runner 905 into the cavity 903, the resin leakage prevention protrusion 605 of the auxiliary mold body 600 adheres to the upper and lower molds by the clamping force of the lower mold 901 and the upper mold 902. At the same time, the tip of the resin leakage prevention protrusion 605 is crushed, closely contacts the mold 900, and together with the sealing portion 601, the first sealing resin material 910 can be prevented from leaking to each terminal portion. it can. By providing the auxiliary mold body 600 with the protrusion 605 protruding toward the mold surface in this manner, resin leakage can be prevented and mass productivity can be improved. The cross-sectional shape of the protrusion 605 is illustrated in FIG. As shown in this figure, the wiring insulating portion 608 maintains the insulation between the DC positive electrode wiring 315A and the DC negative electrode wiring 319A and maintains these wirings 315A and 319A substantially in parallel. After injection, it can be held in a preferred arrangement relationship. Further, since the protrusions are also provided between the wirings 315A and 319A, it is possible to prevent the resin agent from leaking around the wirings 315A and 319A.

  Here, as a material of the sealing portion 601, considering that it is installed in a mold 900 of about 150 to 180 ° C., a liquid crystal polymer or polybutylene terectate (PBT) of a thermoplastic resin that can be expected to have high heat resistance. ) Or polyphenylene sulfide resin (PPS).

  In addition, a plurality of through holes 606 shown in FIG. 6B are provided in the longitudinal direction on the power semiconductor chip side of the auxiliary mold body 600 in the short direction. When the 350 flows in and hardens, an anchor effect is exhibited, and the auxiliary mold body 600 is firmly held by the first sealing resin 350, and both do not peel even when stress is applied due to temperature change or mechanical vibration. . It is difficult to peel even if the shape is uneven instead of the through hole. Further, a certain effect can be obtained by applying a polyimide coating agent to the auxiliary mold body 600 or roughening the surface.

[Assembly of power semiconductor module 300]
FIG. 8A is a perspective view of a module primary sealing body 300 </ b> A in which a first sealing resin 350 is primarily sealed in FIG. 4B, which constitutes an upper and lower arm series circuit with a plurality of power semiconductor elements and conductor plates. FIG. 8B is an exploded cross-sectional view of the power semiconductor module 300. The module primary sealing body 300A can be manufactured by the method shown in FIG. 7, and each conductor plate of the module primary sealing body 300A is composed of an element fixing portion 322 (FIG. 4A or 4C) of the power semiconductor element. There is a heat transfer surface (see FIG. 4 (B)) opposite to the reference), and after sealing with the first sealing resin 350, as shown in FIG. 8 (A), from the surface of the module primary sealing body 300A. Exposed. Each conductor plate forms an insulating sheet crimping surface 338 together with the first sealing resin surface 337 (see FIG. 8A). The insulating sheet crimping surfaces 338 are formed on both surfaces of the module primary sealing body 300A. As a result, the heat flow generated by the heat generated by the power semiconductor element diffuses and reaches the insulating sheet 333 without being blocked by the first sealing resin 350, so that the thermal resistance from the power semiconductor element to the insulating sheet 333 is reduced. it can.

FIG. 9 is a cross-sectional view for explaining a thermocompression bonding process in which the module primary sealing body 300 </ b> A having the insulating sheet 333 is bonded to the module case 304.
As shown in FIG. 9A, the insulating sheet pressure-bonding surface 338 is temporarily bonded to the insulating sheet pressure-bonding surface 338 in a semi-cured state in a vacuum environment, and is held in close contact with a voiceless.

  Next, as shown in FIG. 9B, the module primary sealing body 300A is inserted into the module case 304 through the insertion port 306, and is disposed so that the insulating sheet 333 and the anodized internal plane 308 face each other. The

  Next, as shown in FIG. 9C, the module case 304 is pressurized from the side where the fins 305 are formed toward the module primary sealing body 300 </ b> A side inserted into the module case 304 under a high vacuum temperature. Is done. Due to this applied pressure, the curved portion 304 </ b> A is slightly deformed, and the insulating sheet 333 comes into contact with the anodized internal flat surface 308. As described above, since the module case 304 is placed under a high vacuum temperature, an adhesive force is generated at the contact interface between the insulating sheet 333 and the inner flat surface 308. In the first embodiment, as described above, the module case 304 is a CAN-type cooler having a CAN-type shape.

  Next, as shown in FIG. 9D, the remaining space not occupied by the module primary sealing body 300 </ b> A and the insulating sheet 333 in the module case 304 is filled with the second sealing resin 351. Filling with the second sealing resin 351 is performed from the gap between the longitudinal end portion of the auxiliary mold body 600 and the lateral end portion of the opening of the module case 304 as shown in FIG. Thereby, the side part of the auxiliary mold body 600, the side part of the opening of the module case 304, and the space on both sides and the bottom of the storage room of the module case 304 connected to the opening part are filled with the second sealing resin 351. .

[Assembly of power semiconductor module 300 in waterway]
FIGS. 10A and 10B are views for explaining a process of assembling the power semiconductor module 300 to the housing 12 of the power conversion device. The housing 12 includes a cooling jacket 19A, which is a cooling unit in which a flow path 19 through which a cooling medium flows is formed. The cooling jacket 19A has an opening in the upper part thereof, and an opening is formed on the side facing the opening. The power semiconductor module 300 is inserted from the opening, and leakage of the refrigerant is prevented by the seals 800 and 801 and the flange 304B of the module case 304. For example, water is used as the refrigerant, and the refrigerant flows in an axial direction in which the upper arm circuit and the lower arm circuit are arranged, that is, in a direction crossing the insertion direction of the power semiconductor module 300.

  In the above structure, the upper arm circuit sandwiched between the conductor plates 315 and 318 and the lower arm circuit sandwiched between the conductor plates 316 and 319 are arranged side by side along the flow direction of the refrigerant, More compact modules can be realized. Moreover, it becomes thin in thickness and the fluid resistance with respect to the flow of a refrigerant | coolant is suppressed.

  Further, as shown in FIG. 5B, the upper arm circuit or the lower arm circuit is made of two power semiconductor elements connected in parallel, and the two power semiconductor elements connected in parallel are Between the conductor plates 315 and 318 or between the conductor plates 316 and 319, they are arranged side by side in the direction along the flow of the refrigerant, and this structure makes the entire module smaller.

  The power semiconductor module 300 according to the above-described embodiment is built in by housing the module primary sealing body 300A including the upper and lower arm circuits and the resin insulating layer 333 in the fully closed module case 304 without a joint. The upper and lower arm circuits and the resin insulating layer 333 can be protected from penetration of the cooling medium.

  In addition, heat generated during the operation of the power semiconductor element is diffused from both sides with a conductor plate and transmitted to the insulating sheet 333 and dissipated from the heat dissipation base 307 and the fins 305 of the module case 304, realizing high cooling performance and high reliability. And a structure capable of high current density.

  An auxiliary mold body 600 made of an insulating resin material is interposed between the DC positive electrode wiring 315A and the DC negative electrode wiring 319A so that both are fitted, and the DC positive electrode wiring 315A and the DC negative electrode wiring are secured while ensuring insulation. 319A can be arranged substantially parallel to each other on the basis of high reliability. For this reason, insulation reliability can be ensured and inductance can be reduced, high-speed switching operation of the power converter can be supported, and the degree of freedom in control is increased, and a good current balance is obtained. Parallel connection is possible, and it is possible to realize a power converter having a current capacity expansion capability.

  Further, the auxiliary mold body 600 is provided with a resin leakage prevention protrusion 605 and a through-hole 606 to prevent resin leakage at the time of sealing and improve mass productivity. The first sealing resin is used for the auxiliary mold body 600. The structure reliability is secured by firmly holding

[Description of overheat protection structure of power semiconductor module]
As shown in FIGS. 4B and 4C, in the power semiconductor module of the first embodiment, two element substrates 401U1 and 401U2 each having two upper arm IGBTs 155 and a lower arm IGBT 157 are formed. The two element substrates 401L1 and 401L2 are provided. Each of the element substrates 401U1, 401U2, 401L1, and 401L2 has a rectangular shape and is substantially the same. In the following description, the element substrate on which the upper arm IGBT 155 is formed will be described with a representative reference numeral 401. The element substrate on which the arm IGBT 157 is formed has the same configuration. However, the element substrate 401U1, 401U2 on which the upper arm IGBT 155 is formed is sandwiched between the DC positive electrode conductor plate 315 disposed on the back surface and the second AC conductor plate 318 disposed on the front surface, and the element on which the lower arm IGBT 157 is formed. The substrates 401L1 and 401L2 are different in that they are sandwiched between a second AC conductor plate 316 disposed on the back surface and a DC negative electrode conductor plate 319 disposed on the front surface.

  11 is a layout diagram of the electrodes of the upper arm IGBT 155 and a plurality of types of electrode pads provided on one element substrate 401, and FIG. 12 is a cross-sectional view taken along line XII-XII in FIG.

The element substrate 401 is a thin flat plate-like member and is composed of a semiconductor substrate. The element substrate 401 is provided with an IGBT 155 and a sense diode 408 which is the temperature detection element temperature.
The emitter electrode 405 of the IGBT 155 is separated into a first emitter electrode 405A and a second emitter electrode 405B at a substantially central portion of the element substrate 401. The second emitter electrode 405B has a rectangular planar shape, but the first emitter electrode 405A is not rectangular, but the rectangular region 413A and the one side 412 of the rectangular region 413A to the one side 401a side of the element substrate 401 Has a protruding region 413B.

  On one surface 428 of the element substrate 401, an electrode pad group 410 is provided in a region 411 between the one side 412 of the rectangular region 413A of the first emitter electrode 405A and the one side 401a of the element substrate 401. Yes. This region 411 is an upper strip-shaped region obtained by dividing the element substrate 401 vertically by a line segment passing through one side 412 of the rectangular region 413A of the first emitter electrode 405A. In other words, the region 411 is a rectangular region set inward by a predetermined length from the one side 401a of the element substrate 401.

  Note that although the first emitter electrode 405A has a protruding region 413B protruding into the region 411, the second emitter electrode 405B also has a region provided in the region 411. The second emitter electrode 405B in this region 411 is particularly called a protruding region 414.

The electrode pad group 410 includes a Kelvin emitter electrode pad 405C, a mirror IGBT electrode pad 404, a gate electrode pad 403, an anode electrode pad of the temperature sensing diode 408, that is, a sensor electrode pad 406 and a cathode electrode pad 407. Each electrode pad 405C, 404, 403, 406, 407 is arranged linearly along one side 401a of the element substrate 401, and an Ni plating layer and an Au plating layer are formed on the surface of each electrode. ing.
Each electrode pad of the electrode pad group 410 is connected to an external signal terminal 325U that protrudes outside the module.

  The temperature sense diode 408 is provided between the anode electrode pad 406 and the cathode electrode pad 407 in plan view. The electrode pad group 410 and the temperature sensing diode 408 are provided at positions that do not overlap with the first emitter electrode 405A of the IGBT 155 in plan view. The upper side 412 of the rectangular region 413A of the first emitter electrode 405A The substrate 401 is provided on the inner side with respect to the one side edge 401a and substantially parallel to the one side edge 401a.

  The Kelvin emitter electrode pad 405C, the mirror IGBT electrode pad 404, the anode electrode pad 406 and the cathode electrode pad 407 of the temperature sensing diode 408 are respectively connected to the corresponding internal signal terminals 326U and 326L shown in FIG. They are connected by a bonding wire such as aluminum. The Kelvin emitter electrode pad 405C is for sending the reference potential of the gate signal to the driver circuit 174. The mirror IGBT electrode pad 404 is for measuring the current flowing through the emitter electrode 405.

  On one surface 428 of the element substrate 401, a region other than the electrode pad group 410 in the region 411, a region between the outer edge of the first emitter electrode 405A and the second emitter electrode 405B and the outer edge of the element substrate 401, An organic protective film 415 is formed in a region between the first emitter electrode 405A and the second emitter electrode 405B. That is, the organic protective film 415 is formed on the one surface 428 of the element substrate 401 other than the electrode regions shown by hatching in FIG.

12 is a schematic cross-sectional view of the temperature sense diode 408 cut along the line XII-XII in FIG.
The temperature sense diode 408 is provided on the one surface 428 side of the element substrate 401. That is, the temperature sense diode 408 has an anode region 423 and a cathode region 424 formed by implanting ion impurities into a semiconductor layer such as polycrystalline silicon. An interlayer insulating film 431 is formed on the anode region 423 and the cathode region 424, and an anode electrode 425 connected to the anode region 423 and a cathode electrode 426 connected to the cathode region 424 are formed on the interlayer insulating film 431. Has been.

  The anode electrode 425 and the cathode electrode 426 are connected to the anode electrode pad 406 and the cathode electrode pad 407 by connection wirings 441 and 442 formed on the one surface 428 of the element substrate 401, respectively. As shown in FIG. 11, the temperature sensing diode 408, the anode electrode pad 406, and the cathode electrode pad 407 are arranged adjacent to each other in the region 411 on one side edge of the element substrate 401. The lengths of the connection wiring 441 that connects the anode electrode pad 406 and the anode electrode 425 and the connection wiring 442 that connects the cathode electrode pad 407 and the cathode electrode 426 can be shortened.

Although not shown, the schematic structure of the IGBT 155 will be described. A plurality of pairs of unillustrated gate regions and unillustrated emitter regions formed by implanting ion impurities are formed on one surface 428 of the element substrate 401. A gate electrode body (not shown) connected to the gate region and an emitter electrode body (not shown) connected to each emitter region are formed on each gate region and each emitter region via an opening of an interlayer insulating film (not shown). Has been. A plurality of interlayer insulating films are formed between the one surface 428 of the element substrate 401 and the emitter electrodes 405A and 405B, and all the emitter electrode bodies are connected to one of the emitter electrodes 405A and 405B through the openings of the interlayer insulating film. It is connected to the. Further, all the gate electrode bodies are connected to the gate electrode pad 403 by a gate wiring routed between the interlayer insulating films.
In this way, an insulated gate transistor 155 and a single temperature sensing diode 408 composed of a plurality of elements are formed in the element substrate 401.

  FIG. 13 is a layout diagram of an element substrate block 300B, which is a module intermediate product corresponding to FIG. That is, the second AC conductor plate 318 is formed on one surface 428 (see FIG. 12) of the element substrate 401 on which the upper arm IGBT 155 (lower arm IGBT 157) is formed and on one surface of the substrate on which the upper arm diode 156 (lower arm diode 158) is formed. (DC negative electrode conductor plate 319) is fixed, and the other surface 429 (see FIG. 12) of the element substrate 401 on which the upper arm IGBT 155 (lower arm IGBT 157) is formed and the upper arm diode 156 (lower arm diode 158) are formed. A DC positive conductor plate 315 (first AC conductor plate 316) is fixed to the other surface of the substrate.

  In the following description, the element substrate block 300B of the upper arm IGBT 155 and the upper arm diode 156 will be described, but the same applies to the lower arm IGBT 157 and the lower arm diode 158. In the following description, the DC positive electrode conductor plate 315, the first AC conductor plate 316, the second AC conductor plate 318, and the DC negative electrode conductor plate 319 are simply referred to as conductor plates, unless otherwise specified.

  As illustrated in FIG. 13, the conductor plate 318 is bonded to one surface of the upper arm IGBT 155 and the upper arm diode 156. The upper arm diode 156 is provided on a flat substrate having the same thickness as the element substrate 401 of the upper arm IGBT 155, an anode electrode (not shown) is formed on one surface, and a cathode electrode (not shown) is formed on the other surface. ) Is formed. The anode electrode formed on the diode 156 is fixed to the conductor plate 318 via a metal bonding material 160 such as solder (see FIG. 4A). The cathode electrode formed on the back surface of the diode 156 is fixed to the conductor plate 315 via a metal bonding material 160 (see FIG. 4A) such as solder.

  In FIG. 13, a conductive plate 318 is fixed to the one surface 428 side of the element substrate 401 provided with the upper arm IGBT 155 and the temperature sensing diode 408 via a metal bonding material 160, and the metal bonding material 160 to the other surface 429 side. The conductive plate 315 is fixed via the. On the one surface 428 side of the element substrate 401, the electrode pad group 410 arranged in the one side edge region 411 is disposed outside the one side 318 a of the conductor plate 318.

  One side 318a of the conductor plate 318 extends in a straight line substantially parallel to the one side 401a of the element substrate 401 and the one side 412 of the emitter electrode 405A. The other three sides other than the one side 401 a of the element substrate 401 are arranged inside the corresponding sides of the conductor plate 318. That is, the conductor plate 318 is fixed to the emitter electrodes 405 A and 405 B and the anode electrode of the diode 156 in a region other than the region 411 on one side edge of the element substrate 401.

One side 318a of the conductor plate 318 protrudes from the one side 412 of the emitter electrode 405A formed on the element substrate 401 by a protruding length a. The protruding length a is smaller than any of the protruding lengths b, c, and d that the other three sides of the conductor plate 318 protrude from the corresponding side of the emitter electrode 405.
The protruding length a that the one side 318a of the conductor plate 318 protrudes from the one side 412 of the emitter electrode 405A is “0”, in other words, one side 318a of the conductor plate 318 and one side of the emitter electrode 405A. It may be flush with the side 412.

  As described above, the one side 318a of the conductor plate 318 corresponding to the one side 401a of the element substrate 401 is disposed inside the one side 401a of the element substrate 401. Thereby, the region 411 of the element substrate 401 provided with the temperature sensing diode 408 is exposed from the conductor plate 318 in plan view. In other words, at least the first conductor plate 318 has a contour shape that does not overlap with the element formation region 411 of the element substrate 401 provided with the temperature detection element 408 in plan view.

FIG. 14 is a temperature distribution diagram by simulation of the element substrate block 300B illustrated in FIG.
In FIG. 14, the region R1 has the highest temperature, and the temperature decreases in order from the region R1 to R6.
When the IGBT 155 performs a switching operation, a main current flows in the emitter region. A large number of insulated gate transistor elements constituting the IGBT 155 are formed on the element substrate 401. Of the region 411 on one side edge of the element substrate 401, the insulated gate transistor element is not formed in the region 411A where the electrode pad group 410 is formed. Although heat generated from the insulated gate transistor element is transferred to the region 411A, the region 411A is exposed from the conductor plate 318, and thus is hardly cooled by the conductor plate 318. For this reason, the vicinity of one side 318a of the conductor plate 318 is the highest temperature region. The region where the Kelvin emitter electrode pad 405C, the mirror IGBT electrode pad 404, and the gate electrode pad 403 of the electrode pad group 410 are lower than the maximum temperature is that an insulated gate transistor element is formed in this region. Because it is not.

FIG. 15 is a schematic cross-sectional view for explaining the maximum temperature region of the element substrate 401.
As shown in FIG. 15, the one side 318 a of the conductor plate 318 is flush with the one side 323 a of the element fixing portion 323 and covers the upper side of the temperature sensing diode 408, in other words, in plan view. Thus, there is no portion overlapping the temperature sensing diode 408. In such a structure, the heat generated by the insulated gate transistor is unlikely to be conducted to the conductor plate 318 at the periphery of the temperature sensing diode 408, and the region R1 indicated by the two-dot chain line is the highest temperature region.

Here, when the vicinity of the peripheral edge of the temperature sensing diode 408 is set to the maximum temperature, it is necessary to have a structure in which a portion covering the temperature sensing diode 408 is not formed on the conductor plate 318.
For example, even when the one side 318a of the conductor plate 318 is flush with the one side 323a of the element fixing portion 323, the one side 318a extends stepwise in the thickness direction. It is also possible to have a structure in which an upper portion is formed and the upper portion of the temperature sensing diode 408 is covered by the hook-like portion. However, when a bowl-shaped portion covering the temperature sensing diode 408 is formed on the conductor plate 318 in this way, the region R1 where the temperature of the element substrate 401 is highest moves to the inner side of the element substrate 401, and the element substrate The peripheral edge of 401 is not the region with the highest temperature.

  Therefore, in order to set the region where the temperature due to heat generation in the IGBT 155 (157) becomes the highest at the side edge of the IGBT 155 (157), the conductor plate 318 (319) is exposed to the side edge of the IGBT 155 (157). In addition to being fixed to the IGBT 155 (157), a part of the conductor plate 318 (319) is required not to extend above the side edge.

  Referring to FIG. 14, the region R <b> 1 where the temperature of the element substrate 401 is highest is extended inside the one side 318 a of the conductor plate 318 in the vicinity of the temperature sensing diode 408. Therefore, a part of the temperature sensing diode 408 may be arranged inside the one side 318a of the conductor plate 318, and the whole need not be arranged outside the one side 318a of the conductor plate 318. .

As described above, according to the first embodiment, the following effects are obtained.
(1) The power semiconductor module 300 of the first embodiment includes element substrates 401U1 and 401U2 having two upper arm IGBTs 155 and element substrates 401L1 and 401L2 having two lower arm IGBTs 157. A conductor plate 318 is joined to one surface 428 of the element substrates 401U1 and 401U2 of the upper arm IGBT 155, and a conductor plate 315 is joined to the other surface 429. A conductor plate 319 is joined to one surface 428 of the element substrates 401L1 and 401L2 of the lower arm IGBT 157, and a conductor plate 316 is joined to the other surface 429.
A temperature detecting element, that is, a temperature sensing diode 408 is provided in a region 411 on the one side 401 a side of each element substrate 401. The one side 318 a of the conductor plate 318 corresponding to the one side 401 a of the element substrate 401 is disposed inside the one side 401 a of the element substrate 401. In other words, the conductor plate 318 has a contour shape that does not overlap with the element formation region 411 of the element substrate 401 provided with the temperature sensing diode 408 in plan view.
As a result, the region 411 of the element substrate 401 provided with the temperature sensing diode 408 is exposed from the conductor plate 318. In the region 411, the anode electrode pad 406 and the cathode electrode pad 407 of the temperature sensing diode 408 are also disposed.
In order to employ such a configuration, the temperature of the region 411 of the element substrate 401 provided with the temperature sensing diode 408 is a region where the temperature is highest due to the heat generated by the IGBT 155.
Thereby, even if the temperature sensing diode 408 is provided in the region 411 on one side edge of the element substrate 401, the maximum temperature of the IGBT 155 can be detected. Accordingly, the anode electrode pad 406 and the cathode electrode pad 407 are arranged in the region 411 on one side edge of the element substrate 401 together with the temperature sensing diode 408, and the connection wiring 441 that connects the anode electrode 425 and the anode electrode pad 406, and the cathode The length of the connection wiring 442 connecting the electrode 426 and the cathode electrode pad 407 can be shortened.
Since the lengths of the connection wirings 441 and 442 are shortened, the area around the connection wirings 441 and 442 can be reduced, and the area of the element substrate 401 can be reduced. Can be achieved.

(2) Since the length and area of the connection wirings 441 and 442 are reduced, the layout of the IGBT 155 formed on the element substrate 401 is facilitated, and the development efficiency can be improved.
(3) Since the connection wirings 441 and 442 can be formed in the region 411 on one side edge, and it is not necessary to route to the center of the element substrate 401, the shape of the emitter electrodes 405A and 405B becomes simple, and the emitter electrode Since the conductor plates 318 and 319 fixed to 405A and 405B can be easily attached, productivity is improved.

  The element substrate block 300B including the conductor plate 318 bonded to one surface of the element substrates 401U1 and 401U2 provided with the upper arm IGBT 155 and the conductor plate 315 bonded to the other surface has been described above. However, the present invention can also be applied to the element substrate block 300B including the conductor plate 319 bonded to one surface of the element substrates 401L1 and 401L2 provided with the lower arm IGBT 157 and the conductor plate 316 bonded to the other surface.

Embodiment 2
FIG. 16 is a layout diagram of electrodes and electrode pads of an element substrate as Embodiment 2 of the power semiconductor module according to the present invention, and FIG. 17 is a layout diagram of an element substrate block 300B having the element substrate shown in FIG. It is.
In the element substrate 401 of the second embodiment, the protruding region 413B of the emitter electrode 405A and the protruding region 414 of the emitter electrode 405B are exposed from the organic protective film 415.
A conductor plate 318 fixed to one surface of the emitter electrodes 405A and 405B and the diode 156 is formed so as to cover the protruding regions 413B and 414. That is, one side 318a of the conductor plate 318 protrudes stepwise along the side 318a1 extending outside the side 412a of the emitter electrode 405A and the side of the protruding region 413B from the side 318a1. And side regions 318a ₂ extending to the outside of the protruding regions 413B and 414.

The side portion 318a ₁ of the conductor plate 318 protrudes outward from the side portion 412a of the emitter electrode 405A formed on the element substrate 401 by a protruding length a ₁ . The side portion 318a ₂ of the conductor plate 318 protrudes outward from the side portion 412b of the emitter electrode 405B formed on the element substrate 401 by a protruding length a ₂ .
The projecting lengths a ₁ and a ₂ are smaller than any of the projecting lengths b, c, d that the other three sides of the conductor plate 318 project from the corresponding sides of the emitter electrode 405, respectively. The protruding lengths a ₁ and a ₂ may be the same length or different lengths. One or both of the protruding lengths a ₁ and a ₂ may be “0”.
Also on the element substrate 401 side where the IGBT 157 is provided, the conductor plate 319 can have the same structure as the conductor plate 318.

  The power semiconductor module 300 of the second embodiment also has the same effect as that of the first embodiment. In particular, in the second embodiment, since the conductor plates 318 and 319 cover the protruding region 413B of the emitter electrode 405A and the protruding region 414 of the emitter electrode 405B, the cooling capacity by the conductor plates 318 and 319 is increased accordingly. be able to.

Embodiment 3
FIG. 18 is a layout diagram of electrodes and electrode pads of an element substrate as Embodiment 3 of the power semiconductor module according to the present invention.
In FIG. 18, a plurality of insulated gate transistor elements (FIG. 18) are provided in a region 451 indicated by a two-dot chain line between the protruding region 413B of the emitter electrode 405A of the element substrate 401 and the cathode electrode pad 407 of the temperature sensing diode 408. (Not shown) is formed. In the emitter electrode 405A, a protruding portion 405d that protrudes toward the cathode electrode pad 407 is formed in this region 451. That is, a plurality of insulated gate transistor elements are formed on the back side of the protruding portion 405d of the emitter electrode 405A of the element substrate 401. An emitter electrode body (not shown) of each insulated gate transistor element is connected to the protruding portion 405d of the emitter electrode 405A.

As described above, a plurality of insulated gate transistor elements that generate heat to a high temperature when a main current flows are formed between the cathode electrode pad 407 of the temperature sensing diode 408 and the emitter electrode 405A of the element substrate 401. The effect of increasing the temperature around the temperature sensing diode 408 can be promoted.
For this reason, the accuracy of overtemperature protection of the element substrate 401 can be further improved.

  In the embodiment described above, the emitter electrode 405A of the element substrate 401 is exemplified as a structure in which the overhanging portion 405d protruding to the cathode electrode pad 407 side of the temperature sensing diode 408 is provided. However, if the insulated gate transistor is formed between the cathode electrode pad 407 of the temperature sensing diode 408 and the emitter electrode 405A, the protruding portion 405d may not be provided on the emitter electrode 405A. 11 and 13 may have the same shape as the emitter electrode 405A.

Embodiment 4
FIG. 19 is a layout diagram of electrodes and electrode pads of an element substrate as Embodiment 4 of the power semiconductor module of the present invention.
In FIG. 19, the cathode electrode pad 407 of the temperature sensing diode 408 is shared with the emitter electrode 405A of the element substrate 401.
That is, the cathode electrode pad 407 of the temperature sensing diode 408 illustrated in the first to third embodiments is integrated with the emitter electrode 405A in the protruding region 413B in the fourth embodiment.

As in FIG. 17, the conductor plates 318 and 319 are disposed so as to cover the entire surface of the emitter electrode 405A including the protruding region 413B and the entire surface of the emitter electrode 405B.
Therefore, in the fourth embodiment, the area of the conductor plates 318 and 319 is increased as much as there is no gap between the emitter electrode 405A and the cathode electrode pad 407 of the temperature sensing diode 408, and the cooling performance by the conductor plates 318 and 319 is improved. can do.

The power semiconductor module of the present invention can also be modified as follows.
(1) In each of the above embodiments, the Kelvin emitter electrode pad 405C, the mirror IGBT electrode pad 404, the gate electrode pad 403, the anode electrode pad 406 and the cathode electrode pad 407 of the temperature sensing diode 408 overlap the conductor plate 318. It was illustrated as a structure that should not be.
However, at least a part of the temperature sensing diode 408, the anode electrode pad 406, and the cathode electrode pad 407 may be prevented from overlapping the conductor plate 318.
The Kelvin emitter electrode pad 405 </ b> C, the mirror IGBT electrode pad 404, and the gate electrode pad 403 may overlap the conductor plate 318 by providing a flange 318 b of the conductor plate 318. In the above, in the configuration in which the cathode electrode pad 407 of the temperature sensing diode 408 is formed integrally with the emitter electrode 405B of the element substrate 401 as in the fourth embodiment (FIG. 19), at least a part of the temperature sensing diode 408 and the anode A configuration in which the electrode pad 406 does not overlap the conductor plate 318 may be employed.

(2) In each of the above embodiments, the Kelvin emitter electrode pad 405C, the mirror IGBT electrode pad 404, the gate electrode pad 403, the anode electrode pad 406 of the temperature sensing diode 408, and the cathode electrode pad 407 are arranged on one side edge region. This is illustrated as a configuration arranged in 411. However, all or any of the Kelvin emitter electrode pad 405C, the mirror IGBT electrode pad 404, and the gate electrode pad 403 may be arranged on the side edge other than the one-side edge region 411. Further, the present invention can be applied to a power semiconductor module that does not have the Kelvin emitter electrode pad 405C or the mirror IGBT electrode pad 404.

(3) In each of the above embodiments, the element substrate 401 is exemplified as a structure in which a plurality of insulated gate transistor elements are formed. However, the IGBTs 155 and 157 including one insulated gate transistor element on the element substrate 401 are exemplified. May be formed.

(4) In the above embodiments, the upper arm IGBT 155 is provided on the two substrate elements 401U1 and 401U2, and the lower arm IGBT 157 is provided on the two substrate elements 401L1 and 401L2. However, the present invention can be applied to a power semiconductor module even if the upper arm IGBT 155 is provided on one element substrate 401U and the lower arm IGBT 157 is provided on one element substrate 401L.

(5) In each of the above embodiments, the emitter electrode 405 formed on the element substrate 401 is exemplified as a configuration separated into 405A and 405B. However, the number of emitter electrodes 405 may be one, or may be separated into three or more.

(6) In each of the above embodiments, the temperature sensing element is exemplified as the temperature sensing diode 408, but other temperature sensing elements such as a temperature sensing transistor may be used as the temperature sensing element.

(7) In each of the above embodiments, the conductor plates 315, 316, 318, 319 and the element substrate 401 are exemplified as a structure that is fixed by a metal bonding material 160 such as solder. However, the conductor plates 315, 316, 318, and 318 and the element substrate 401 may be fixed by an adhesive or resin having good thermal conductivity, and, in short, as long as the structure is joined so as to be thermally conductive. Good.

(8) In the above embodiments, the main regions of the conductor plates 315, 316, 318, 319 and the element substrate 401 are generally rectangular. That is, the conductor plate and the element substrate are all polygons having a contour line as a straight line. However, the outline that is the outer shape of these members is not necessarily a straight line.

(9) In the above embodiment, the power semiconductor module 300 is exemplified as a configuration that is inserted and cooled in a cooling jacket through which a coolant such as cooling water flows. However, the present invention is cooled by a cooling gas such as air. It can also be applied to power semiconductor modules.

(10) The present invention also includes the following power semiconductor modules. That is, a first electrode for input signals, for example, a collector electrode 421, a second electrode for output signals, for example, an emitter electrode 405, and a third electrode for control signals, for example, a gate electrode 403, A switching element that converts an input signal of the first electrode 421 based on the applied control signal and outputs an output signal from the second electrode 405, such as an IGBT 155; an element substrate 401 on which the switching element 155 is formed; A first conductor plate 318 bonded to the first electrode 405 exposed on the one surface 428 side of the 401; a second conductor plate 315 bonded to the second electrode 421 exposed on the other surface 429 side of the element substrate 401; A temperature sensing element provided on the periphery of the substrate 401 for detecting the temperature of the switching element 155, for example, a temperature sensing diode 408; An electrode pad for a temperature sensing element, for example, an anode electrode 406 and a cathode electrode 407 of a temperature sensing diode 408; provided on one surface of the element substrate 401; In the power semiconductor module, at least the first conductor plate 318 has a contour shape that does not overlap with the element formation region 411 of the element substrate 401 provided with the temperature detection element 408 in plan view.

In addition, the present invention is not limited to the above-described embodiment, and various modifications can be applied within the scope of the gist of the present invention.

155, 157 IGBT (Insulated Gate Transistor)
156, 158 Diode 300 Power semiconductor module 300B Element substrate block 315 Direct current positive electrode conductor plate (second conductor member)
316 First AC conductor plate (second conductor member)
318 Second AC conductor plate (first conductor member)
318a One side 318a ₁ , 318a ₂ Sides of the conductor plate 318 318b ridge 319 DC negative conductor plate (first conductor member)
401 Element substrate 401a One side 402a Side of emitter electrode 405A 402b Side of emitter electrode 405B 403 Gate electrode pad 404 Mirror IGBT electrode pad 405, 405A, 405B Emitter electrode 405C Kelvin emitter electrode pad 405d Overhang of emitter electrode Part 406 Anode electrode pad (sensor electrode pad)
407 Cathode electrode pad 408 Temperature sensing diode (temperature sensing element)
410 Electrode pad group 411 One side edge of element substrate 401 412 One side of emitter electrode 405A 413A Rectangular region 413B, 414 Projection region 415 Organic protective film 421 Collector electrode 425 Anode electrode 426 Cathode electrode 428 One side 429 Other side a, a ₁ , A ₂ , b to d Projection length of the conductor plate

Claims (8)

An insulated gate transistor having an emitter electrode, a collector electrode, and a gate electrode pad, a temperature detection element, and a sensor electrode pad connected to the temperature detection element, the emitter electrode, the gate electrode pad, and the sensor electrode An element substrate having a pad formed on one surface and the collector electrode formed on the other surface;
A diode having an anode electrode formed on one surface and a cathode electrode formed on the other surface;
A first conductor member electrically connected to the emitter electrode of the insulated gate transistor and the anode electrode of the diode;
A second conductor member electrically connected to the collector electrode of the insulated gate transistor and the cathode electrode of the diode;
The temperature sensing element and the sensor electrode pad are disposed in a predetermined region along one side of the element substrate,
The second conductor member is joined to the other surface of the element substrate and the other surface of the diode so as to be thermally conductive,
The first conductor member is joined to the one surface of the insulated gate transistor so as to be capable of conducting heat, and the first conductor member does not overlap at least a part of the temperature detection element and the sensor electrode pad. A power semiconductor module, wherein at least a side portion of a region corresponding to the predetermined region of the element substrate is disposed on an inner side than the one side of the element substrate. The power semiconductor module according to claim 1,
The first conductor member and the emitter electrode have a polygonal shape, and a side portion of the region of the first conductor member corresponding to the predetermined region of the element substrate is a corresponding side portion of the emitter electrode. The protrusion length of the first conductor member protrudes from the side portion of the emitter electrode on the other side. A power semiconductor module formed smaller than any of the above. The power semiconductor module according to claim 2,
The first semiconductor member has a region in which the side portion is outside the predetermined region of the element substrate and has a protruding length larger than a protruding length protruding from a corresponding side portion of the emitter electrode. module. The power semiconductor module according to claim 1,
The power semiconductor module, wherein the gate electrode pad of the insulated gate transistor is provided in the predetermined region of the element substrate. The power semiconductor module according to claim 1,
A power semiconductor module, wherein an organic insulating film that exposes at least the sensor electrode pad is formed outside the side portion of the first conductor member in the element substrate. The power semiconductor module according to claim 1,
A plurality of insulated gate transistor elements are formed on the element substrate,
The temperature detection element is a diode having an anode region and a cathode region formed by injecting impurities into the element substrate,
The sensor electrode pad includes an anode electrode pad connected to the anode region and a cathode electrode pad connected to the cathode region;
A power semiconductor module, wherein a part of the plurality of insulated gate transistor elements is formed below at least one of the anode electrode pad and the cathode electrode pad of the element substrate. The power semiconductor module according to claim 6, wherein
The power semiconductor module, wherein the cathode electrode pad of the temperature detection element is formed integrally with the emitter electrode of the insulated gate transistor. It has a first electrode for input signal, a second electrode for output signal, and a third electrode for control signal, and converts the input signal of the first electrode based on the control signal applied to the third electrode A switching element that outputs an output signal from the second electrode;
An element substrate on which the switching element is formed;
A first conductor plate joined to the first electrode exposed on one side of the element substrate;
A second conductor plate joined to the second electrode exposed on the other surface side of the element substrate;
A temperature detection element provided at a peripheral edge of the element substrate and detecting a temperature of the switching element;
Provided on one surface of the element substrate, and an electrode pad for the temperature sensing element;
Provided on one surface of the element substrate, and having an electrode pad for the third electrode,
At least the first conductor plate is a power semiconductor module having a contour shape that does not overlap an element formation region of the element substrate on which the temperature detection element is provided in plan view.

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