JP2015206789A - 電流測定方法 - Google Patents

電流測定方法 Download PDF

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Publication number
JP2015206789A
JP2015206789A JP2015080578A JP2015080578A JP2015206789A JP 2015206789 A JP2015206789 A JP 2015206789A JP 2015080578 A JP2015080578 A JP 2015080578A JP 2015080578 A JP2015080578 A JP 2015080578A JP 2015206789 A JP2015206789 A JP 2015206789A
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Japan
Prior art keywords
transistor
potential
film
oxide semiconductor
oxide
Prior art date
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Withdrawn
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JP2015080578A
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English (en)
Japanese (ja)
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JP2015206789A5 (cg-RX-API-DMAC7.html
Inventor
加藤　清
Kiyoshi Kato
清 加藤
一馬 古谷
Kazuma Furuya
一馬 古谷
将志 津吹
Masashi Tsubuki
将志 津吹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2015080578A priority Critical patent/JP2015206789A/ja
Publication of JP2015206789A publication Critical patent/JP2015206789A/ja
Publication of JP2015206789A5 publication Critical patent/JP2015206789A5/ja
Withdrawn legal-status Critical Current

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  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Thin Film Transistor (AREA)
JP2015080578A 2014-04-11 2015-04-10 電流測定方法 Withdrawn JP2015206789A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015080578A JP2015206789A (ja) 2014-04-11 2015-04-10 電流測定方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014082224 2014-04-11
JP2014082224 2014-04-11
JP2015080578A JP2015206789A (ja) 2014-04-11 2015-04-10 電流測定方法

Related Child Applications (1)

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JP2019216174A Division JP2020056794A (ja) 2014-04-11 2019-11-29 電流測定方法

Publications (2)

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JP2015206789A true JP2015206789A (ja) 2015-11-19
JP2015206789A5 JP2015206789A5 (cg-RX-API-DMAC7.html) 2018-05-17

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JP2015080578A Withdrawn JP2015206789A (ja) 2014-04-11 2015-04-10 電流測定方法
JP2019216174A Withdrawn JP2020056794A (ja) 2014-04-11 2019-11-29 電流測定方法

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JP (2) JP2015206789A (cg-RX-API-DMAC7.html)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001249147A (ja) * 2000-03-03 2001-09-14 Nec Corp 電流検出回路および電流検出方法
US20070025030A1 (en) * 2005-07-08 2007-02-01 Samsung Electronics Co., Ltd. Leakage current detection circuit and leakage current comparison circuit
JP2011145290A (ja) * 2009-12-18 2011-07-28 Semiconductor Energy Lab Co Ltd 電流測定方法、半導体装置の検査方法、半導体装置、および特性評価用素子
JP2011237418A (ja) * 2010-04-16 2011-11-24 Semiconductor Energy Lab Co Ltd 電流測定方法、半導体装置の検査方法、半導体装置、および特性評価用回路
JP2012039058A (ja) * 2009-12-28 2012-02-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015195353A (ja) * 2014-02-21 2015-11-05 株式会社半導体エネルギー研究所 電流測定方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001249147A (ja) * 2000-03-03 2001-09-14 Nec Corp 電流検出回路および電流検出方法
US20070025030A1 (en) * 2005-07-08 2007-02-01 Samsung Electronics Co., Ltd. Leakage current detection circuit and leakage current comparison circuit
JP2011145290A (ja) * 2009-12-18 2011-07-28 Semiconductor Energy Lab Co Ltd 電流測定方法、半導体装置の検査方法、半導体装置、および特性評価用素子
JP2012039058A (ja) * 2009-12-28 2012-02-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011237418A (ja) * 2010-04-16 2011-11-24 Semiconductor Energy Lab Co Ltd 電流測定方法、半導体装置の検査方法、半導体装置、および特性評価用回路
JP2015195353A (ja) * 2014-02-21 2015-11-05 株式会社半導体エネルギー研究所 電流測定方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
古谷一馬，戸松浩之，塩野入豊，加藤清，小山潤，山崎舜平: "16a-F2-13「結晶性ＩＧＺＯトランジスタのｙＡオーダーの極小オフ電流測定」", 第５９回応用物理学関係連合講演会講演予稿集, JPN6019005160, 18 March 2012 (2012-03-18), pages 06 - 225, ISSN: 0003978906 *

Also Published As

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