JP2015179748A5 - - Google Patents

Download PDF

Info

Publication number
JP2015179748A5
JP2015179748A5 JP2014056734A JP2014056734A JP2015179748A5 JP 2015179748 A5 JP2015179748 A5 JP 2015179748A5 JP 2014056734 A JP2014056734 A JP 2014056734A JP 2014056734 A JP2014056734 A JP 2014056734A JP 2015179748 A5 JP2015179748 A5 JP 2015179748A5
Authority
JP
Japan
Prior art keywords
group
element layer
sup
electrode
optical device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014056734A
Other languages
English (en)
Japanese (ja)
Other versions
JP6228873B2 (ja
JP2015179748A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014056734A priority Critical patent/JP6228873B2/ja
Priority claimed from JP2014056734A external-priority patent/JP6228873B2/ja
Publication of JP2015179748A publication Critical patent/JP2015179748A/ja
Publication of JP2015179748A5 publication Critical patent/JP2015179748A5/ja
Application granted granted Critical
Publication of JP6228873B2 publication Critical patent/JP6228873B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014056734A 2014-03-19 2014-03-19 半導体光素子の製造方法 Active JP6228873B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014056734A JP6228873B2 (ja) 2014-03-19 2014-03-19 半導体光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014056734A JP6228873B2 (ja) 2014-03-19 2014-03-19 半導体光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2015179748A JP2015179748A (ja) 2015-10-08
JP2015179748A5 true JP2015179748A5 (cg-RX-API-DMAC10.html) 2016-10-06
JP6228873B2 JP6228873B2 (ja) 2017-11-08

Family

ID=54263623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014056734A Active JP6228873B2 (ja) 2014-03-19 2014-03-19 半導体光素子の製造方法

Country Status (1)

Country Link
JP (1) JP6228873B2 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6774792B2 (ja) * 2016-06-22 2020-10-28 旭化成エレクトロニクス株式会社 赤外線デバイス

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140754A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd 半導体装置の製造方法
JP2686764B2 (ja) * 1988-03-11 1997-12-08 国際電信電話株式会社 光半導体素子の製造方法
US6309975B1 (en) * 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
JPH10261835A (ja) * 1997-03-21 1998-09-29 Mitsubishi Electric Corp 半導体レーザ装置、及びその製造方法
JP3644569B2 (ja) * 1997-04-22 2005-04-27 富士通株式会社 半導体装置の製造方法
US6812495B2 (en) * 2002-06-19 2004-11-02 Massachusetts Institute Of Technology Ge photodetectors
US20060133754A1 (en) * 2004-12-21 2006-06-22 Vipulkumar Patel Ultra low-loss CMOS compatible silicon waveguides
WO2007053431A2 (en) * 2005-10-28 2007-05-10 Massachusetts Institute Of Technology Method and structure of germanium laser on silicon
JP2007173590A (ja) * 2005-12-22 2007-07-05 Toshiba Corp 半導体発光材料およびそれを用いた発光素子
JP5468011B2 (ja) * 2008-11-12 2014-04-09 株式会社日立製作所 発光素子並びに受光素子及びその製造方法
JP5565148B2 (ja) * 2010-06-30 2014-08-06 富士通株式会社 半導体光素子
US20130313579A1 (en) * 2010-11-19 2013-11-28 John Kouvetakis Dilute sn-doped ge alloys
WO2013118248A1 (ja) * 2012-02-06 2013-08-15 株式会社日立製作所 発光素子

Similar Documents

Publication Publication Date Title
TW202619531A (zh) 半導體裝置及其製造方法
PH12016502161A1 (en) Solar cell emitter region fabrication using ion implantation
JP2018503976A5 (cg-RX-API-DMAC10.html)
JP2015135976A5 (ja) 半導体装置の作製方法
EP3018719A3 (en) Solar cell and method for manufacturing the same
JP2015513798A5 (cg-RX-API-DMAC10.html)
EP4456146A3 (en) HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE WITH IMPROVED CHARGE TRAPPING EFFICIENCY
JP2016001736A5 (cg-RX-API-DMAC10.html)
JP2016541114A5 (ja) 半導体構造、集積回路構造、及びそれらの製造方法
JP2019046909A5 (cg-RX-API-DMAC10.html)
JP2011040445A5 (cg-RX-API-DMAC10.html)
PH12016501141A1 (en) Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
JP2018537858A5 (cg-RX-API-DMAC10.html)
WO2016064134A3 (en) Light emitting device and method of fabricating the same
JP2014199899A5 (cg-RX-API-DMAC10.html)
JP2016046527A5 (ja) 半導体装置及びその作製方法
EP2654090A3 (en) Solar cell method for manufacturing the same
JP2015111742A5 (ja) 半導体装置の作製方法、及び半導体装置
JP2015135953A5 (cg-RX-API-DMAC10.html)
JP2015201559A5 (cg-RX-API-DMAC10.html)
JP2014139967A5 (cg-RX-API-DMAC10.html)
JP2015046429A5 (cg-RX-API-DMAC10.html)
MY192045A (en) Solar cell with trench-free emitter regions
CN103840013A (zh) 双向tvs二极管及其制造方法
JP2016526789A5 (cg-RX-API-DMAC10.html)