JP2015173788A - 生体材料セラミックス焼結体及びその製造方法 - Google Patents
生体材料セラミックス焼結体及びその製造方法 Download PDFInfo
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- 239000012620 biological material Substances 0.000 title claims abstract description 28
- 239000000919 ceramic Substances 0.000 title claims abstract description 28
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 claims abstract description 123
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 96
- 239000010703 silicon Substances 0.000 claims abstract description 96
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- -1 phosphorus ion Chemical class 0.000 claims abstract description 37
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- 238000001354 calcination Methods 0.000 claims abstract description 11
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001424 calcium ion Inorganic materials 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 89
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- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical compound [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 claims description 2
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Abstract
【解決手段】原料となるリンイオン源物質とケイ素イオン源物質とカルシウムイオン源物質と電荷補償のための一価陽イオン源物質と構造安定化のための二価陽イオン源物質とを配合し、かつ、前記ケイ素イオン源物質の配合比率を4.0mol%未満として混合する混合ステップと、混合ステップにて得られた混合物を仮焼きする仮焼ステップと、仮焼ステップにて得られた仮焼成体を成形する成形ステップと、成形ステップにて得られた成形体を1000℃より高く1150℃より低い温度で焼成する焼成ステップと、を有する生体材料セラミックス焼結体の製造方法を提供する。
【選択図】図1
Description
<実施形態 概要>
<実施形態 構成>
(1)固溶形態
(リン酸三カルシウムの性質)
(β‐TCPの結晶構造)
(ケイ酸イオンの生体反応)
(マグネシウムイオンの生体反応)
(ナトリウムイオンの生体反応)
(本発明の目的)
(2)ケイ素固溶β−TCP粉末の合成
(3)ケイ素固溶β−TCP焼結体の作製
<実施形態1:置換効果>
(1)X線回折
(2)FT−IR
(3)格子定数の精密化
(4)まとめ
(1)アルキメデス法による開気孔率及び見かけ密度の測定
(2)焼結体の曲げ強度測定
(3)微構造観察
(4)まとめ
<実施形態 効果>
Claims (5)
- β型リン酸三カルシウムの結晶構造内のリン酸のリン位置にケイ素を置換させ、置換元素の価電子数の変化にともなう電荷補償のために同結晶構造内に存在する空孔に一価陽イオンを置換させ、さらにこの置換固溶体の構造安定化のためにカルシウム位置に二価陽イオンを置換させたβ型リン酸三カルシウムからなる生体材料セラミックスを焼結してなる生体材料セラミックス焼結体の製造方法であって、
原料となるリンイオン源物質とケイ素イオン源物質とカルシウムイオン源物質と前記一価陽イオン源物質と前記二価陽イオン源物質とを配合し、かつ、前記ケイ素イオン源物質の配合比率を4.0mol%未満として混合する混合ステップと、
混合ステップにて得られた混合物を仮焼きする仮焼ステップと、
仮焼ステップにて得られた仮焼成体を成形する成形ステップと、
成形ステップにて得られた成形体を1000℃より高く1150℃より低い温度で焼成する焼成ステップと、
を有する生体材料セラミックス焼結体の製造方法。 - 混合ステップにおける前記二価陽イオン源物質の配合比率を10.0mol%未満とする請求項1に記載の生体材料セラミックス焼結体の製造方法。
- 前記二価陽イオンは、マグネシウムイオン又は/及び、マンガンイオンである請求項1又は2に記載の生体材料セラミックス焼結体の製造方法。
- 焼結ステップでの焼結温度は1050℃から1100℃までの範囲内である請求項1から3のいずれか一に記載の生体材料セラミックス焼結体の製造方法。
- 請求項1から4のいずれか一に記載の生体材料セラミックス焼結体の製造方法により製造された生体材料セラミックス焼結体。
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