JP2015173209A5 - - Google Patents
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- JP2015173209A5 JP2015173209A5 JP2014048941A JP2014048941A JP2015173209A5 JP 2015173209 A5 JP2015173209 A5 JP 2015173209A5 JP 2014048941 A JP2014048941 A JP 2014048941A JP 2014048941 A JP2014048941 A JP 2014048941A JP 2015173209 A5 JP2015173209 A5 JP 2015173209A5
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- JP
- Japan
- Prior art keywords
- solution
- residual component
- drying
- supplying
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001035 drying Methods 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 14
- -1 sulfate ions Chemical class 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 4
- 210000002381 Plasma Anatomy 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 3
- 238000001514 detection method Methods 0.000 claims 3
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 3
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims 1
- 125000004430 oxygen atoms Chemical group O* 0.000 claims 1
Description
実施形態に係る洗浄システムは、
被処理物に、硫酸イオンおよびアンモニウムイオンの少なくともいずれかを含む第1の溶液を供給する第1の供給部と、
前記第1の溶液が供給された被処理物に第2の溶液を供給する第2の供給部と、
前記第2の溶液が供給された被処理物を乾燥させる乾燥部と、
前記乾燥部において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去部と、を備え、
前記残留成分除去部は、前記乾燥部において乾燥させた被処理物を加熱する加熱部を有する。
The cleaning system according to the embodiment
A first supply unit for supplying a first solution containing at least one of sulfate ions and ammonium ions to the object to be treated;
A second supply unit for supplying a second solution to the object to be processed supplied with the first solution;
A drying section for drying the object to be treated supplied with the second solution;
A residual component removal unit that removes residual components on the surface of the object to be processed dried in the drying unit,
The residual component removing unit includes a heating unit that heats the workpiece dried in the drying unit .
Claims (13)
前記第1の溶液が供給された被処理物に第2の溶液を供給する第2の供給部と、
前記第2の溶液が供給された被処理物を乾燥させる乾燥部と、
前記乾燥部において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去部と、を備え、
前記残留成分除去部は、前記乾燥部において乾燥させた被処理物を加熱する加熱部を有する洗浄システム。 A first supply unit for supplying a first solution containing at least one of sulfate ions and ammonium ions to the object to be treated;
A second supply unit for supplying a second solution to the object to be processed supplied with the first solution;
A drying section for drying the object to be treated supplied with the second solution;
A residual component removal unit that removes residual components on the surface of the object to be processed dried in the drying unit,
The said residual component removal part is a washing | cleaning system which has a heating part which heats the to-be-processed object dried in the said drying part .
大気圧よりも減圧された雰囲気を維持可能な容器と、 A container capable of maintaining an atmosphere depressurized from atmospheric pressure;
前記容器の内部にガスを供給するガス供給部と、 A gas supply unit for supplying gas into the container;
前記容器の内部を所定の圧力まで減圧する減圧部と、 A decompression section for decompressing the inside of the container to a predetermined pressure;
をさらに備える請求項1記載の洗浄システム。The cleaning system according to claim 1, further comprising:
前記第1の溶液が供給された被処理物に第2の溶液を供給する第2の供給部と、
前記第2の溶液が供給された被処理物を乾燥させる乾燥部と、
前記乾燥部において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去部と、を備え、
前記残留成分除去部は、
プラズマを発生させる領域に電磁エネルギーを供給するプラズマ発生部と、
前記プラズマを発生させる領域にプロセスガスを供給するプロセスガス供給部と、
を有する洗浄システム。 A first supply unit for supplying a first solution containing at least one of sulfate ions and ammonium ions to the object to be treated;
A second supply unit for supplying a second solution to the object to be processed supplied with the first solution;
A drying section for drying the object to be treated supplied with the second solution;
A residual component removal unit that removes residual components on the surface of the object to be processed dried in the drying unit,
The residual component removing unit is
A plasma generator for supplying electromagnetic energy to a region for generating plasma;
A process gas supply unit for supplying a flop Rosesugasu the region for generating the plasma,
Having a cleaning system.
前記残留成分除去部の内部の雰囲気に含まれる成分を検出する検出部をさらに備え、A detection unit for detecting a component contained in the atmosphere inside the residual component removal unit;
前記検出部は、前記被処理物から脱離した前記硫酸イオンおよび前記アンモニウムイオンの少なくともいずれかを検出する請求項1〜5のいずれか1つに記載の洗浄システム。The cleaning system according to claim 1, wherein the detection unit detects at least one of the sulfate ions and the ammonium ions desorbed from the object to be processed.
前記第1の溶液が供給された被処理物に第2の溶液を供給する工程と、
前記第2の溶液が供給された被処理物を乾燥させる工程と、
前記乾燥させる工程において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去工程と、を備え、
前記残留成分除去工程は、
前記乾燥させる工程において乾燥させた被処理物を加熱する工程を備えた洗浄方法。 Supplying a first solution containing at least one of sulfate ions and ammonium ions to an object to be treated;
Supplying a second solution to the workpiece to which the first solution is supplied;
Drying the object to be treated supplied with the second solution;
A residual component removing step of removing a residual component on the surface of the workpiece to be dried in the drying step,
The residual component removing step includes
A cleaning method comprising a step of heating an object to be dried in the step of drying.
前記第1の溶液が供給された被処理物に第2の溶液を供給する工程と、
前記第2の溶液が供給された被処理物を乾燥させる工程と、
前記乾燥させる工程において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去工程と、を備え、
前記残留成分除去工程は、
酸素原子および水素原子の少なくともいずれかを含むプロセスガスから生成されたプラズマ生成物を用いて、前記乾燥させる工程において乾燥させた被処理物を処理する工程と、
を備えた洗浄方法。 Supplying a first solution containing at least one of sulfate ions and ammonium ions to an object to be treated;
Supplying a second solution to the workpiece to which the first solution is supplied;
Drying the object to be treated supplied with the second solution;
A residual component removing step of removing a residual component on the surface of the workpiece to be dried in the drying step,
The residual component removing step includes
Using the plasma product generated from the process gas containing at least one of oxygen atoms and hydrogen atoms, treating the dried object to be processed in the drying step;
Cleaning method with.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014048941A JP6366307B2 (en) | 2014-03-12 | 2014-03-12 | Cleaning system and cleaning method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014048941A JP6366307B2 (en) | 2014-03-12 | 2014-03-12 | Cleaning system and cleaning method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018127156A Division JP2018157233A (en) | 2018-07-03 | 2018-07-03 | Cleaning system and cleaning method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015173209A JP2015173209A (en) | 2015-10-01 |
JP2015173209A5 true JP2015173209A5 (en) | 2018-02-15 |
JP6366307B2 JP6366307B2 (en) | 2018-08-01 |
Family
ID=54260362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014048941A Active JP6366307B2 (en) | 2014-03-12 | 2014-03-12 | Cleaning system and cleaning method |
Country Status (1)
Country | Link |
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JP (1) | JP6366307B2 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4405236B2 (en) * | 2003-10-31 | 2010-01-27 | キヤノン株式会社 | Substrate processing method and substrate processing apparatus |
JP4299638B2 (en) * | 2003-10-31 | 2009-07-22 | キヤノン株式会社 | Substrate processing apparatus and substrate processing method |
JP2008028102A (en) * | 2006-07-20 | 2008-02-07 | Fujifilm Corp | Method and device for removing resist mask |
JP4750773B2 (en) * | 2007-10-01 | 2011-08-17 | 忠弘 大見 | Substrate processing system |
JP2009267167A (en) * | 2008-04-25 | 2009-11-12 | Dainippon Screen Mfg Co Ltd | Substrate-treating device |
JP5475302B2 (en) * | 2009-03-12 | 2014-04-16 | 芝浦メカトロニクス株式会社 | Resist stripping apparatus and resist stripping method |
-
2014
- 2014-03-12 JP JP2014048941A patent/JP6366307B2/en active Active
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