JP2015173209A5 - - Google Patents

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JP2015173209A5
JP2015173209A5 JP2014048941A JP2014048941A JP2015173209A5 JP 2015173209 A5 JP2015173209 A5 JP 2015173209A5 JP 2014048941 A JP2014048941 A JP 2014048941A JP 2014048941 A JP2014048941 A JP 2014048941A JP 2015173209 A5 JP2015173209 A5 JP 2015173209A5
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solution
residual component
drying
supplying
processed
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JP6366307B2 (en
JP2015173209A (en
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実施形態に係る洗浄システムは、
被処理物に、硫酸イオンおよびアンモニウムイオンの少なくともいずれかを含む第1の溶液を供給する第1の供給部と、
前記第1の溶液が供給された被処理物に第2の溶液を供給する第2の供給部と、
前記第2の溶液が供給された被処理物を乾燥させる乾燥部と、
前記乾燥部において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去部と、を備え、
前記残留成分除去部は、前記乾燥部において乾燥させた被処理物を加熱する加熱部を有する。
The cleaning system according to the embodiment
A first supply unit for supplying a first solution containing at least one of sulfate ions and ammonium ions to the object to be treated;
A second supply unit for supplying a second solution to the object to be processed supplied with the first solution;
A drying section for drying the object to be treated supplied with the second solution;
A residual component removal unit that removes residual components on the surface of the object to be processed dried in the drying unit,
The residual component removing unit includes a heating unit that heats the workpiece dried in the drying unit .

Claims (13)

被処理物に、硫酸イオンおよびアンモニウムイオンの少なくともいずれかを含む第1の溶液を供給する第1の供給部と、
前記第1の溶液が供給された被処理物に第2の溶液を供給する第2の供給部と、
前記第2の溶液が供給された被処理物を乾燥させる乾燥部と、
前記乾燥部において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去部と、を備え、
前記残留成分除去部は、前記乾燥部において乾燥させた被処理物を加熱する加熱部を有する洗浄システム。
A first supply unit for supplying a first solution containing at least one of sulfate ions and ammonium ions to the object to be treated;
A second supply unit for supplying a second solution to the object to be processed supplied with the first solution;
A drying section for drying the object to be treated supplied with the second solution;
A residual component removal unit that removes residual components on the surface of the object to be processed dried in the drying unit,
The said residual component removal part is a washing | cleaning system which has a heating part which heats the to-be-processed object dried in the said drying part .
前記残留成分除去部は、The residual component removing unit is
大気圧よりも減圧された雰囲気を維持可能な容器と、 A container capable of maintaining an atmosphere depressurized from atmospheric pressure;
前記容器の内部にガスを供給するガス供給部と、 A gas supply unit for supplying gas into the container;
前記容器の内部を所定の圧力まで減圧する減圧部と、 A decompression section for decompressing the inside of the container to a predetermined pressure;
をさらに備える請求項1記載の洗浄システム。The cleaning system according to claim 1, further comprising:
前記乾燥部は、前記容器の内部に設けられている請求項2記載の洗浄システム。The cleaning system according to claim 2, wherein the drying unit is provided inside the container. 被処理物に、硫酸イオンおよびアンモニウムイオンの少なくともいずれかを含む第1の溶液を供給する第1の供給部と、
前記第1の溶液が供給された被処理物に第2の溶液を供給する第2の供給部と、
前記第2の溶液が供給された被処理物を乾燥させる乾燥部と、
前記乾燥部において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去部と、を備え、
前記残留成分除去部は、
プラズマを発生させる領域に電磁エネルギーを供給するプラズマ発生部と、
前記プラズマを発生させる領域にロセスガスを供給するプロセスガス供給部と、
有する洗浄システム。
A first supply unit for supplying a first solution containing at least one of sulfate ions and ammonium ions to the object to be treated;
A second supply unit for supplying a second solution to the object to be processed supplied with the first solution;
A drying section for drying the object to be treated supplied with the second solution;
A residual component removal unit that removes residual components on the surface of the object to be processed dried in the drying unit,
The residual component removing unit is
A plasma generator for supplying electromagnetic energy to a region for generating plasma;
A process gas supply unit for supplying a flop Rosesugasu the region for generating the plasma,
Having a cleaning system.
前記第2の供給部は、前記残留成分除去部において、表面の残留成分が除去された前記被処理物に前記第2の溶液をさらに供給する請求項1〜4のいずれか1つに記載の洗浄システム。The said 2nd supply part further supplies the said 2nd solution to the said to-be-processed object from which the residual component of the surface was removed in the said residual component removal part. Cleaning system. 前記残留成分は前記硫酸イオンおよび前記アンモニウムイオンの少なくともいずれかを含み、The residual component includes at least one of the sulfate ion and the ammonium ion,
前記残留成分除去部の内部の雰囲気に含まれる成分を検出する検出部をさらに備え、A detection unit for detecting a component contained in the atmosphere inside the residual component removal unit;
前記検出部は、前記被処理物から脱離した前記硫酸イオンおよび前記アンモニウムイオンの少なくともいずれかを検出する請求項1〜5のいずれか1つに記載の洗浄システム。The cleaning system according to claim 1, wherein the detection unit detects at least one of the sulfate ions and the ammonium ions desorbed from the object to be processed.
前記プロセスガスは、酸素ガス、酸素ガスを含む混合ガス、水素ガス、および水素ガスを含む混合ガスの少なくとも1種を含む請求項4に記載の洗浄システム。The cleaning system according to claim 4, wherein the process gas includes at least one of oxygen gas, a mixed gas containing oxygen gas, hydrogen gas, and a mixed gas containing hydrogen gas. 被処理物に、硫酸イオンおよびアンモニウムイオンの少なくともいずれかを含む第1の溶液を供給する工程と、
前記第1の溶液が供給された被処理物に第2の溶液を供給する工程と、
前記第2の溶液が供給された被処理物を乾燥させる工程と、
前記乾燥させる工程において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去工程と、を備え、
前記残留成分除去工程は、
前記乾燥させる工程において乾燥させた被処理物を加熱する工程を備えた洗浄方法。
Supplying a first solution containing at least one of sulfate ions and ammonium ions to an object to be treated;
Supplying a second solution to the workpiece to which the first solution is supplied;
Drying the object to be treated supplied with the second solution;
A residual component removing step of removing a residual component on the surface of the workpiece to be dried in the drying step,
The residual component removing step includes
A cleaning method comprising a step of heating an object to be dried in the step of drying.
前記加熱する工程は、所定のガスを含み大気圧よりも減圧された雰囲気中において行われる請求項8記載の洗浄方法。The cleaning method according to claim 8, wherein the heating step is performed in an atmosphere containing a predetermined gas and depressurized from an atmospheric pressure. 被処理物に、硫酸イオンおよびアンモニウムイオンの少なくともいずれかを含む第1の溶液を供給する工程と、
前記第1の溶液が供給された被処理物に第2の溶液を供給する工程と、
前記第2の溶液が供給された被処理物を乾燥させる工程と、
前記乾燥させる工程において乾燥させた前記被処理物の表面の残留成分を除去する残留成分除去工程と、を備え、
前記残留成分除去工程は、
酸素原子および水素原子の少なくともいずれかを含むプロセスガスから生成されたプラズマ生成物を用いて、前記乾燥させる工程において乾燥させた被処理物を処理する工程と、
を備えた洗浄方法。
Supplying a first solution containing at least one of sulfate ions and ammonium ions to an object to be treated;
Supplying a second solution to the workpiece to which the first solution is supplied;
Drying the object to be treated supplied with the second solution;
A residual component removing step of removing a residual component on the surface of the workpiece to be dried in the drying step,
The residual component removing step includes
Using the plasma product generated from the process gas containing at least one of oxygen atoms and hydrogen atoms, treating the dried object to be processed in the drying step;
Cleaning method with.
前記表面の残留成分が除去された前記被処理物に前記第2の溶液を供給する工程をさらに備えた請求項8〜10のいずれか1つに記載の洗浄方法。The cleaning method according to claim 8, further comprising a step of supplying the second solution to the object to be processed from which residual components on the surface have been removed. 前記残留成分は、硫酸イオンおよび前記アンモニウムイオンの少なくともいずれかを含み、前記被処理物から脱離した前記硫酸イオンおよび前記アンモニウムイオンの少なくともいずれかを検出する工程をさらに備えた請求項8〜11のいずれか1つに記載の洗浄方法。The said residual component contains at least any one of a sulfate ion and the said ammonium ion, The process of detecting at least any one of the said sulfate ion and the said ammonium ion which detach | desorbed from the said to-be-processed object was further provided. The washing | cleaning method as described in any one of these. 前記検出する工程によって検出された検出結果に基づいて、前記残留成分除去工程の終了が判断される請求項12記載の洗浄方法。The cleaning method according to claim 12, wherein the end of the residual component removing step is determined based on the detection result detected by the detecting step.
JP2014048941A 2014-03-12 2014-03-12 Cleaning system and cleaning method Active JP6366307B2 (en)

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JP4405236B2 (en) * 2003-10-31 2010-01-27 キヤノン株式会社 Substrate processing method and substrate processing apparatus
JP4299638B2 (en) * 2003-10-31 2009-07-22 キヤノン株式会社 Substrate processing apparatus and substrate processing method
JP2008028102A (en) * 2006-07-20 2008-02-07 Fujifilm Corp Method and device for removing resist mask
JP4750773B2 (en) * 2007-10-01 2011-08-17 忠弘 大見 Substrate processing system
JP2009267167A (en) * 2008-04-25 2009-11-12 Dainippon Screen Mfg Co Ltd Substrate-treating device
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