JP2015170803A5 - - Google Patents

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Publication number
JP2015170803A5
JP2015170803A5 JP2014046342A JP2014046342A JP2015170803A5 JP 2015170803 A5 JP2015170803 A5 JP 2015170803A5 JP 2014046342 A JP2014046342 A JP 2014046342A JP 2014046342 A JP2014046342 A JP 2014046342A JP 2015170803 A5 JP2015170803 A5 JP 2015170803A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
iii nitride
group iii
semiconductor layer
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014046342A
Other languages
English (en)
Japanese (ja)
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JP2015170803A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014046342A priority Critical patent/JP2015170803A/ja
Priority claimed from JP2014046342A external-priority patent/JP2015170803A/ja
Priority to CN201510102739.8A priority patent/CN104916751A/zh
Priority to US14/643,059 priority patent/US9379523B2/en
Publication of JP2015170803A publication Critical patent/JP2015170803A/ja
Publication of JP2015170803A5 publication Critical patent/JP2015170803A5/ja
Pending legal-status Critical Current

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JP2014046342A 2014-03-10 2014-03-10 ＩＩＩ族窒化物半導体素子、ｐ型コンタクト構造、ＩＩＩ族窒化物半導体素子を作製する方法 Pending JP2015170803A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014046342A JP2015170803A (ja) 2014-03-10 2014-03-10 ＩＩＩ族窒化物半導体素子、ｐ型コンタクト構造、ＩＩＩ族窒化物半導体素子を作製する方法
CN201510102739.8A CN104916751A (zh) 2014-03-10 2015-03-09 III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法
US14/643,059 US9379523B2 (en) 2014-03-10 2015-03-10 Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014046342A JP2015170803A (ja) 2014-03-10 2014-03-10 ＩＩＩ族窒化物半導体素子、ｐ型コンタクト構造、ＩＩＩ族窒化物半導体素子を作製する方法

Publications (2)

Publication Number Publication Date
JP2015170803A JP2015170803A (ja) 2015-09-28
JP2015170803A5 true JP2015170803A5 (cg-RX-API-DMAC7.html) 2015-11-05

Family

ID=54018348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014046342A Pending JP2015170803A (ja) 2014-03-10 2014-03-10 ＩＩＩ族窒化物半導体素子、ｐ型コンタクト構造、ＩＩＩ族窒化物半導体素子を作製する方法

Country Status (3)

Country Link
US (1) US9379523B2 (cg-RX-API-DMAC7.html)
JP (1) JP2015170803A (cg-RX-API-DMAC7.html)
CN (1) CN104916751A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279495B (zh) * 2017-10-16 2023-06-09 阿卜杜拉国王科技大学 具有氮化硼合金接触层的iii族氮化物半导体器件及其制造方法
US12349528B2 (en) * 2021-10-25 2025-07-01 Meta Platforms Technologies, Llc Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3250438B2 (ja) 1995-03-29 2002-01-28 日亜化学工業株式会社 窒化物半導体発光素子
JP3680558B2 (ja) * 1998-05-25 2005-08-10 日亜化学工業株式会社 窒化物半導体素子
EP1063711B1 (en) * 1998-03-12 2013-02-27 Nichia Corporation Nitride semiconductor device
JP3609661B2 (ja) * 1999-08-19 2005-01-12 株式会社東芝 半導体発光素子
JP4933130B2 (ja) * 2006-02-16 2012-05-16 昭和電工株式会社 ＧａＮ系半導体発光素子およびその製造方法
US8144743B2 (en) * 2008-03-05 2012-03-27 Rohm Co., Ltd. Nitride based semiconductor device and fabrication method for the same
JP4390007B2 (ja) * 2008-04-07 2009-12-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子及びエピタキシャルウエハ
JP4917585B2 (ja) * 2008-08-26 2012-04-18 住友電気工業株式会社 窒化物系半導体光素子を製造する方法、及びエピタキシャルウエハを製造する方法
WO2010029775A1 (ja) * 2008-09-11 2010-03-18 住友電気工業株式会社 窒化物系半導体光素子、窒化物系半導体光素子のためのエピタキシャルウエハ、及び半導体発光素子を製造する方法
JP4793489B2 (ja) * 2009-12-01 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5139555B2 (ja) * 2011-04-22 2013-02-06 住友電気工業株式会社 窒化物半導体レーザ、及びエピタキシャル基板
JP2013033930A (ja) * 2011-06-29 2013-02-14 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法
JP5054221B1 (ja) * 2011-08-26 2012-10-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
JP5522147B2 (ja) * 2011-11-02 2014-06-18 住友電気工業株式会社 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法

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