JP2015159268A - クラスター型半導体製造装置及びそれを用いた半導体素子の製造方法 - Google Patents
クラスター型半導体製造装置及びそれを用いた半導体素子の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 116
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- 235000012431 wafers Nutrition 0.000 claims abstract description 82
- 238000004140 cleaning Methods 0.000 claims abstract description 21
- 239000003517 fume Substances 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32889—Connection or combination with other apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- Analytical Chemistry (AREA)
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Abstract
【解決手段】ウエハを移送する多面体のトランスファーモジュール110と;前記トランスファーモジュールの第1面に前記ウエハの表面のヒュームを除去するガス除去工程が行われる第1プロセスモジュール120と;第2面に前記ウエハの表面を洗浄するプラズマクリーニング工程が行われる第2プロセスモジュール121と;第3面に前記ガス除去工程及び前記プラズマクリーニング工程が行われた前記ウエハが一定時間待機状態に維持されるスタンバイモジュール130と;第4面に前記スタンバイモジュールで待機状態を経た前記ウエハに任意の処理工程が行われる第3プロセスモジュール122と;を含むことを特徴とする。
【選択図】図1
Description
110(TM) トランスファーモジュール
120〜124(PM1、PM2、PM3、PM4、PM5) プロセスモジュール
130(SM) スタンバイモジュール
140、141(LLM1、LLM2) ロードロックモジュール
Claims (7)
- ウエハを移送する多面体のトランスファーモジュールと、
前記トランスファーモジュールの第1面を介して前記トランスファーモジュールに連通され、前記ウエハの表面のヒュームを除去するガス除去工程が行われる第1プロセスモジュールと、
前記トランスファーモジュールの第2面を介して前記トランスファーモジュールに連通され、前記ウエハの表面を洗浄するプラズマクリーニング工程が行われる第2プロセスモジュールと、
前記トランスファーモジュールの第3面を介して前記トランスファーモジュールに連通され、前記ガス除去工程及び前記プラズマクリーニング工程が行われた前記ウエハが一定時間待機状態に維持されるスタンバイモジュールと、
前記トランスファーモジュールの第4面を介して前記トランスファーモジュールに連通され、前記スタンバイモジュールで待機状態を経た前記ウエハに任意の処理工程が行われる第3プロセスモジュールとを含むことを特徴とする、クラスター型半導体製造装置。 - 前記スタンバイモジュールは、
真空待機チャンバであることを特徴とする、請求項1に記載のクラスター型半導体製造装置。 - 前記第3プロセスモジュールは、
前記ウエハに金属膜を蒸着する金属スパッタリング工程が行われる金属スパッタリングチャンバであることを特徴とする、請求項1に記載のクラスター型半導体製造装置。 - 前記多面体のトランスファーモジュールは、
真空雰囲気で個々のウエハを移送するように真空チャンバを備えることを特徴とする、請求項1に記載のクラスター型半導体製造装置。 - 真空雰囲気が維持されるクラスター型半導体製造装置にウエハをローディングする第1過程と、
ガス除去工程を通じて前記ウエハの表面のヒュームを除去する第2過程と、
プラズマクリーニング工程を通じて前記ウエハの表面を洗浄する第3過程と、
前記第2及び第3過程を経た前記ウエハを真空雰囲気で一定時間待機状態に維持させる第4過程と、
金属スパッタリング工程を通じて前記第4過程を経た前記ウエハに金属膜を蒸着する第5過程とを含むことを特徴とする、クラスター型半導体製造装置を用いた半導体素子の製造方法。 - 多面体のトランスファーモジュールと、前記多面体のトランスファーモジュールの第1面乃至第3面を介して前記多面体のトランスファーモジュールに連通する第1乃至第3プロセスモジュールと、前記多面体のトランスファーモジュールの第4面を介して前記多面体のトランスファーモジュールに連通するスタンバイモジュールとを含むクラスター型半導体製造装置を用いた半導体素子の製造方法において、
前記多面体のトランスファーモジュールにウエハをローディングする第1過程と、
前記ウエハを前記第1プロセスモジュールに移送し、ガス除去工程を通じて前記ウエハの表面のヒュームを除去する第2過程と、
前記ウエハを前記第2プロセスモジュールに移送し、プラズマクリーニング工程を通じて前記ウエハの表面を洗浄する第3過程と、
前記第2及び第3過程を経た前記ウエハを前記スタンバイモジュールに移送し、真空雰囲気で一定時間待機状態に維持させる第4過程と、
前記第4過程を経た前記ウエハを前記第3プロセスモジュールに移送し、金属スパッタリング工程を通じて前記ウエハに金属膜を蒸着する第5過程とを含むことを特徴とする、クラスター型半導体製造装置を用いた半導体素子の製造方法。 - 前記多面体のトランスファーモジュールは、
真空雰囲気で個々のウエハを移送することを特徴とする、請求項6に記載のクラスター型半導体製造装置を用いた半導体素子の製造方法。
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KR10-2014-0020397 | 2014-02-21 | ||
KR1020140020397A KR101550526B1 (ko) | 2014-02-21 | 2014-02-21 | 클러스터형 반도체 제조장치 및 이를 이용한 반도체 소자 제조방법 |
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US (1) | US20150243535A1 (ja) |
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KR (1) | KR101550526B1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000068230A (ja) * | 1998-08-25 | 2000-03-03 | Mitsubishi Electric Corp | 半導体装置、その製造装置、および、その製造方法 |
WO2009057223A1 (ja) * | 2007-11-02 | 2009-05-07 | Canon Anelva Corporation | 表面処理装置およびその基板処理方法 |
WO2009144810A1 (ja) * | 2008-05-30 | 2009-12-03 | キヤノンアネルバ株式会社 | シリサイド形成方法とその装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US4392932A (en) * | 1981-11-12 | 1983-07-12 | Varian Associates, Inc. | Method for obtaining uniform etch by modulating bias on extension member around radio frequency etch table |
US5356836A (en) * | 1993-08-19 | 1994-10-18 | Industrial Technology Research Institute | Aluminum plug process |
JP3599199B2 (ja) * | 1994-08-31 | 2004-12-08 | 富士通株式会社 | 多層配線を有する半導体装置の製造方法 |
KR101311277B1 (ko) | 2011-12-16 | 2013-09-25 | 주식회사 테스 | 기판처리시스템 |
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2014
- 2014-02-21 KR KR1020140020397A patent/KR101550526B1/ko active IP Right Grant
- 2014-07-17 JP JP2014147026A patent/JP2015159268A/ja active Pending
- 2014-07-18 US US14/335,110 patent/US20150243535A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000068230A (ja) * | 1998-08-25 | 2000-03-03 | Mitsubishi Electric Corp | 半導体装置、その製造装置、および、その製造方法 |
WO2009057223A1 (ja) * | 2007-11-02 | 2009-05-07 | Canon Anelva Corporation | 表面処理装置およびその基板処理方法 |
WO2009144810A1 (ja) * | 2008-05-30 | 2009-12-03 | キヤノンアネルバ株式会社 | シリサイド形成方法とその装置 |
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KR20150098973A (ko) | 2015-08-31 |
KR101550526B1 (ko) | 2015-09-04 |
US20150243535A1 (en) | 2015-08-27 |
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