JP2015153829A - Semiconductor light emitting device, mounting substrate and semiconductor light emitting device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having a novel constitution.SOLUTION: A semiconductor light emitting device comprises: a mounting substrate which includes a support substrate, a first substrate electrode which is formed on the support substrate and includes a ferromagnetic material, and a second substrate electrode formed on the support substrate so as to surround at least a part of the first substrate electrode and at a distance from the first substrate electrode; an optical semiconductor laminate which is arranged above the first substrate electrode and the second substrate electrode and luminescent; a central electrode which is formed at the center of an undersurface of the optical semiconductor laminate so as to contact the first substrate electrode and includes a ferromagnetic material; and a peripheral electrode formed on a circumference of the undersurface of the optical semiconductor laminate so as to contact the second substrate electrode and at a distance from the central electrode.

Description

  The present invention mainly relates to a semiconductor light emitting device in which a laterally fed semiconductor light emitting element is mounted on a mounting substrate, and a method for manufacturing the semiconductor light emitting device.

  A light-emitting diode (LED) generally includes an n-type semiconductor layer, a light-emitting active layer, and a p-type semiconductor layer sequentially laminated, and a pair of electrodes for injecting current into the photo-semiconductor laminate. It is the composition which has. Electrons injected from one electrode into the n-type semiconductor layer and holes injected from the other electrode into the p-type semiconductor layer recombine in the active layer, and the energy required for this recombination is light (and heat). ). When a nitride semiconductor such as GaN (gallium nitride) is used for the optical semiconductor stack, the LED emits ultraviolet light or blue light, and can emit white light by using a phosphor.

  Such LEDs can be classified into a vertical feed type and a lateral feed type depending on the configuration of the electrodes. The vertically fed LED has a configuration in which electrodes are formed on both sides of the optical semiconductor stack, that is, the surface on the n-type semiconductor layer side and the surface on the p-side semiconductor layer side. The laterally fed LED has a structure in which an electrode is formed on one surface of the optical semiconductor stack, that is, one of the surface on the n-type semiconductor layer side and the surface on the p-side semiconductor layer side. Specifically, for example, a region where the p-type semiconductor layer and the active layer are removed to expose the n-type semiconductor layer is formed on a part of the surface on the p-type semiconductor layer side, and the surface on the p-type semiconductor layer side is formed. The electrode is formed on the surface of the p-type semiconductor layer and the region where the n-type semiconductor layer is exposed.

  Patent Document 1 discloses a method of efficiently mounting a vertically fed LED on a substrate using an electric field or the like. According to Patent Document 1, a mounting substrate is immersed in a solvent in which a plurality of fine LEDs each having a side of several tens of μm are scattered, and an electric field gradient is formed corresponding to a position where the mounting substrate is to be mounted. It is said that fine LEDs can be simultaneously mounted in a single process.

JP 2001-257218 A

  A main object of the present invention is to provide a semiconductor light emitting device having a novel structure. Another object of the present invention is to provide a method for accurately mounting a laterally fed LED at a desired position on a mounting board.

  According to a first aspect of the present invention, there is provided a semiconductor light emitting device including a mounting substrate and a semiconductor light emitting element mounted on the mounting substrate, wherein the mounting substrate includes a support substrate and the support substrate. A first substrate electrode including a ferromagnetic material, and a first substrate electrode formed on the support substrate so as to surround at least a part of the first substrate electrode with a gap between the first substrate electrode and the first substrate electrode. 2 substrate electrodes, the semiconductor light emitting element is disposed above the first substrate electrode and the second substrate electrode, and has a light emitting optical semiconductor stack, and a center of the lower surface of the optical semiconductor stack, A central electrode formed to be in contact with the first substrate electrode and including a ferromagnetic material, and in contact with the second substrate electrode with a gap between the central electrode and a lower peripheral edge of the optical semiconductor stack. And a peripheral electrode to be formed. Device, is provided.

  According to a second aspect of the present invention, a support substrate, a first substrate electrode formed on the surface of the support substrate and including a ferromagnetic material that is spontaneously magnetized, and on the surface of the support substrate, the first substrate electrode and A second substrate electrode formed with a gap and containing a diamagnetic material or a paramagnetic material, and formed on the surface of the support substrate continuously with the first substrate electrode. A mounting board comprising: a first wiring member including a material; and a second wiring member formed on the surface of the support substrate continuously with the second substrate electrode and including a diamagnetic material or a paramagnetic material. Provided.

  According to a third aspect of the present invention, the step a) a support substrate, a first substrate electrode formed on the support substrate and including a spontaneously magnetized ferromagnetic material, and the first substrate electrode on the support substrate. A step of preparing a mounting substrate comprising a second substrate electrode formed so as to surround at least a part of the first substrate electrode with a gap from the substrate electrode; and step b) a photo-semiconductor laminate having luminescence A central electrode formed in a central region of the surface of the optical semiconductor stack and including a ferromagnetic material, and a peripheral electrode formed in the peripheral region of the surface of the optical semiconductor multilayer with a gap from the central electrode. A step of preparing an element dispersion solvent in which the semiconductor light emitting element comprises a solvent dispersed in a solvent; and a step c) supplying the element dispersion solvent to the mounting substrate, wherein the central electrode of the semiconductor light emitting element is the first electrode. Being drawn to the substrate electrode Ri, the central electrode is in contact with the first substrate electrode, a method of manufacturing a semiconductor light-emitting device having a step of the peripheral electrode is in contact with the second substrate electrode, is provided.

  A semiconductor light emitting device having a novel configuration can be obtained. Further, the laterally fed LED can be accurately mounted at a desired position on the mounting substrate.

1A and 1B are a cross-sectional view and a plan view showing how a mounting substrate is manufactured. 2A and 2B are a cross-sectional view and a plan view showing how a mounting board is manufactured. 3A and 3B are a cross-sectional view and a plan view showing how a mounting substrate is manufactured. , and, 4A to 4H are a cross-sectional view and a plan view showing how the LED array according to Example 1 is manufactured. FIGS. 5A and 5B are cross-sectional views generally showing a state in which the LED array according to Example 1 is divided into individual LED elements and the LED elements are fixed to a mounting substrate. and, 6A to 6C are a plan view and a cross-sectional view showing the LED device according to the first embodiment. 7A to 7C are cross-sectional views illustrating a part of the LED device according to the second embodiment. 8A and 8B are a plan view and a cross-sectional view showing the LED device according to the second embodiment.

  With reference to FIGS. 1-6, the semiconductor light-emitting device (LED apparatus) 101 by Example 1 is demonstrated. The LED device 101 has a configuration in which a semiconductor light emitting element (LED element) 122 according to the first embodiment is mounted on a mounting substrate 110. Moreover, the manufacturing method of the LED device 101 includes a process of manufacturing the mounting substrate 110 (FIGS. 1 to 3) and a process of manufacturing the LED array 120 in which a large number of LED elements 122 (light emitting structures 121) are connected (FIG. 4). And, after dividing the LED array 120 into individual LED elements 122, mounting the LED elements 122 on the mounting substrate 110 (FIG. 5).

  A method for manufacturing the mounting substrate 110 will be described with reference to FIGS. The mounting substrate 110 has a configuration in which substrate electrodes 23 and 24 are formed on the support substrate 11.

  1A and 1B are cross-sectional views showing how the first and second wiring patterns 21 and 22 are formed on the support substrate 11, and the shapes of the first and second wiring patterns 21 and 21. It is a top view. Note that the IA-IA cross section in FIG. 1B corresponds to the cross sectional view shown in FIG. 1A.

  As shown in FIG. 1A, first, a conductive film 20 containing Cu, Al, or the like is formed on the surface of a support substrate 11 made of PET (polyethylene terephthalate) resin or the like by electroplating or the like. The film thickness of the conductive film 20 is about 25 μm. The conductive film 20 is preferably made of a material excluding a ferromagnetic material, that is, a diamagnetic material or a paramagnetic material.

  Thereafter, a part of the conductive film 20 is etched by wet etching using a resist mask to form first and second wiring patterns 21 and 22. A groove 20d is defined in the gap between the first and second wiring patterns 21 and 22.

  As shown in FIG. 1B, the first wiring pattern 21 has a shape extending in one direction on the plane of the support substrate 11. The second wiring pattern 22 includes a first portion 22a surrounding the terminal portion 21t of the first wiring pattern 21, a second portion 22b extending in one direction continuously to the first portion 22a, It has the shape containing. The first portion 22a has, for example, an annular shape in which a region corresponding to the first wiring pattern 21 is partially cut out. The groove portion 20d also has a shape in which an area corresponding to the first wiring pattern 21 is partially cut out in an annular shape.

  2A and 2B are a cross-sectional view showing a state in which the first electrode layer 23a is formed on the first wiring pattern 21, and a plan view showing the shape of the first electrode layer 23a. Note that the IIA-IIA cross section in FIG. 2B corresponds to the cross sectional view shown in FIG. 2A.

  As shown in FIGS. 2A and 2B, a circular first electrode layer 23a including a ferromagnetic material and a solder member is formed on the terminal portion 21t of the first wiring pattern 21 by a lift-off method. Specifically, first, a photoresist pattern is formed on the support substrate 11 in a region excluding the terminal portion 21 t of the first wiring pattern 21. Subsequently, a ferromagnetic film containing Fe, Ni, or the like is formed on the termination portion 21t of the first wiring pattern 21 and the photoresist pattern by an electron beam evaporation method or the like. Thereafter, together with the photoresist pattern, the ferromagnetic film formed thereon is removed (lifted off). As a result, the ferromagnetic film remains at the terminal end 21t of the first wiring pattern 21, and a patterned ferromagnetic film, that is, the first electrode layer 23a is obtained. The layer thickness of the first electrode layer 23a is about 5 μm.

  Here, a configuration including the first electrode layer 23 a and the terminal portion 21 t of the first wiring pattern 21 is referred to as a first substrate electrode 23. The region excluding the terminal end 21t of the first wiring pattern 21 is referred to as a first wiring member 21w.

  3A and 3B are cross-sectional views showing a state in which the first substrate electrode 23 is magnetized after the second electrode layer 24a is formed on the second wiring pattern 22, and the shape of the second substrate electrode 24 is shown. It is a top view. Note that the IIIA-IIIA cross section in FIG. 3B corresponds to the cross sectional view shown in FIG. 3A.

  As shown in FIGS. 3A and 3B, the first portion 22a of the second wiring pattern 22 includes a diamagnetic material such as Cu or Al or a paramagnetic material, and a solder member by a lift-off method. A two-electrode layer 24a is formed. The height from the surface of the support substrate 11 to the surface of the second electrode layer 24 a matches the height of the first substrate electrode 23. Note that the second electrode layer 24 a may be formed on the second portion 22 b of the second wiring pattern 22.

  Here, the configuration including the second electrode layer 24 a and the first portion 22 a of the second wiring pattern 22 is referred to as a second substrate electrode 24. Further, the second portion 22b of the second wiring pattern 22 is referred to as a second wiring member 22w.

  Thereafter, a magnetic field is applied to the first substrate electrode 23 containing a ferromagnetic material, and the first substrate electrode 23 (particularly the first electrode layer 23a) is saturated (spontaneous magnetization). Thereby, the first substrate electrode 23 spontaneously generates a magnetic field. The second substrate electrode 24, the first wiring member 21w, and the second wiring member 22w are made of a diamagnetic material or a paramagnetic material, that is, not made of a ferromagnetic material. It will never be done.

  As described above, the mounting substrate 110 is completed. It is assumed that a plurality of the first substrate electrode 23 and the first wiring member 21w, and the second substrate electrode 24 and the second wiring member 22w are formed on the support substrate 11.

  With reference to FIG. 4, the manufacturing method of LED array 120 is demonstrated. 4A to 4G are cross-sectional views showing how the LED array 120 is formed.

  First, a C-plane sapphire substrate is prepared as the growth substrate 12. In addition to the sapphire substrate, a spinel substrate, a ZnO (zinc oxide) substrate, or the like can be used as the growth substrate 12. Thereafter, the growth substrate 12 is thermally cleaned. Specifically, the growth substrate 12 is heated at 1000 ° C. for 10 minutes in a hydrogen atmosphere.

Next, as shown in FIG. 4A, Al _x In _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y) is formed on the growth substrate 12 by MOCVD (metal organic chemical vapor deposition) or the like. A nitride semiconductor layer (optical semiconductor stack 30) represented by ≦ 1) is formed.

Specifically, first, the substrate temperature is set to 500 ° C., TMG (trimethylgallium) is supplied at a flow rate of 10.4 μmol / min, and NH ₃ is supplied at a flow rate of 3.3 SLM for 3 minutes. As a result, a buffer layer made of GaN grows on the growth substrate 12. Subsequently, the substrate temperature is set to 1000 ° C. to crystallize the buffer layer.

Thereafter, while maintaining the substrate temperature, TMG is supplied at a flow rate of 45 μmol / min and NH ₃ is supplied at a flow rate of 4.4 SLM for 20 minutes. Thereby, an underlayer made of GaN grows on the buffer layer. The buffer layer and the base layer constitute the base buffer layer 31.

Thereafter, while maintaining the substrate temperature, TMG is supplied at a flow rate of 45 μmol / min, NH ₃ is supplied at a flow rate of 4.4 SLM, and SiH ₄ is supplied at a flow rate of 2.7 × 10 ⁻⁹ μmol / min for 120 minutes. As a result, a Si-doped GaN layer (n-type GaN layer) having a thickness of about 7 μm is grown on the underlying buffer layer 31. The n-type GaN layer constitutes the n-type semiconductor layer 32.

Thereafter, the substrate temperature is set to 700 ° C., TMG is supplied at a flow rate of 3.6 μmol / min, TMI (trimethylindium) is supplied at a flow rate of 10 μmol / min, and NH ₃ is supplied at a flow rate of 4.4 SLM for 33 seconds. A well layer (with a thickness of about 2.2 nm) is grown. Subsequently, the supply of TMI is stopped, TMG and NH ₃ are supplied for 320 seconds, and a barrier layer (layer thickness of about 15 nm) made of GaN is grown. Then, the growth of the well layer and the barrier layer is repeated alternately (for example, for five periods) to form the active layer 33 having a multiple quantum well structure on the n-type semiconductor layer 32.

Thereafter, the substrate temperature is set to 870 ° C., TMG is supplied at a flow rate of 8.1 μmol / min, TMA (trimethylaluminum) is supplied at a flow rate of 7.5 μmol / min, NH ₃ is supplied at a flow rate of 4.4 SLM, and 2.9 × 10. CP2Mg (biscyclopentadienylmagnesium) is supplied for 5 minutes at a flow rate of ⁻⁷ μmol / min. Thereby, an Mg-doped AlGaN layer (p-type AlGaN layer) having a thickness of about 40 nm is grown on the active layer 33. Subsequently, the supply of TMA is stopped, and TMG is supplied at a flow rate of 18 μmol / min, NH ₃ is supplied at a flow rate of 4.4 SLM, and CP2Mg is supplied at a flow rate of 2.9 × 10 ⁻⁷ μmol / min for 7 minutes. . Thereby, an Mg-doped GaN layer (p-type GaN layer) having a thickness of about 150 nm is grown on the p-type AlGaN layer. The p-type AlGaN layer and the p-type GaN layer constitute a p-type semiconductor layer 34.

  As described above, the optical semiconductor stack 30 in which the n-type semiconductor layer 32, the active layer 33, and the p-type semiconductor layer 34 are sequentially stacked is formed on the growth substrate 12 via the base buffer layer 31.

  Next, a part of the optical semiconductor stack 30 is etched by a dry etching method using chlorine gas using a resist mask to form a hole (via) 30 h in the optical semiconductor stack 30. The via 30h penetrates at least the p-type semiconductor layer 34 and the active layer 33, and the n-type semiconductor layer 32 is exposed on the bottom surface of the via 30h.

Next, as shown in FIG. 4B, an insulating layer 41 covering the inside of the via 30h is formed. First, a SiO ₂ film is formed on the entire surface of the optical semiconductor stack 30 including the via 30 h by sputtering or the like. Subsequently, the SiO ₂ film formed in the region other than the via 30 h and the periphery of the via 30 h on the surface of the optical semiconductor stack 30 is etched by a dry etching method using a CF ₄ / Ar mixed gas using a resist mask. Thereby, a patterned SiO ₂ film, that is, the insulating layer 41 is formed. As the insulating layer 41, SiN or the like can be used in addition to SiO ₂ .

  Next, as shown in FIG. 4C, the p-side electrode 50 is formed around the insulating layer 41 on the optical semiconductor stack 30 (p-type semiconductor layer 34) by a lift-off method. The p-side electrode 50 is made of, for example, a conductive multilayer film of ITO (indium tin oxide) film / Ag film / TiW film / Ti film / Pt film / Au film / Ti film. The p-side electrode 50 is preferably made of a material excluding a ferromagnetic material, that is, a diamagnetic material or a paramagnetic material.

  The p-side electrode 50 is electrically connected to the p-type semiconductor layer 34 on the surface of the p-type semiconductor layer 34. The height of the p-side electrode 50 (height from the surface of the p-type semiconductor layer 34 to the surface of the p-side electrode 50) is about 1 μm.

Next, as shown in FIG. 4D, after the insulating layer 31 on the bottom surface of the via 30h is removed, an n-side electrode 42 covering the inside of the via 30h is formed. First, a part of the insulating layer 41 located on the bottom surface of the via 30h is etched by a dry etching method using a CF ₄ / Ar mixed gas using a resist mask. As a result, the n-type semiconductor layer 32 is exposed on the bottom surface of the via 30h. Thereafter, an n-side electrode 42 is formed in the via 30 h and on the insulating film 41 by a lift-off method. The n-side electrode 42 is made of, for example, a metal multilayer film of Ti film / Ag film / Pt film / Ti film / Ni film / Au film. The n-side electrode 42 contains Ni that is a ferromagnetic material. As the ferromagnetic material, in addition to Ni, Fe, Co, or the like can be used.

  The n-side electrode 42 passes through the via 30 h and is electrically connected to the n-type semiconductor layer 32 and provided with a gap from the p-side electrode 50. The height of the n-side electrode 42 (height from the surface of the optical semiconductor laminate 30 to the surface of the n-side electrode 42) is substantially the same as the height of the p-side electrode 50 (about 1 μm).

  Next, as shown in FIG. 4E, the optical semiconductor stack 30 positioned outside the p-side electrode 50 is etched to a depth of about 1 μm by a dry etching method using chlorine gas using a resist mask, and the separation groove 30d is formed. Form. A region inside the separation groove 30d in the optical semiconductor stack 30 is referred to as an element region 122A. The separation groove 30 d defines the outer edge of the LED element 122.

Thereafter, the inside of the separation groove 30d is covered by a sputtering method using a resist mask, and a protective insulating film 71 (film thickness of about 100 to 600 nm) made of SiO ₂ is formed.

  Thus, the light emitting structure 121 is formed on the growth substrate 12.

  Next, as shown in FIG. 4F, a thick Kapton tape 73 is attached to the surface of the light emitting structure 121 as a temporary support. Thereafter, the growth substrate 12 and the light emitting structure 121 (the optical semiconductor stack 30) are separated by a laser lift-off method.

Specifically, KrF excimer laser light (wavelength 248 nm, irradiation energy density 800 to 900 mJ / cm ² ) is irradiated from the growth substrate 12 (sapphire substrate) side. The laser light passes through the growth substrate 12 and is absorbed by the underlying buffer layer 31 (GaN layer). The underlying buffer layer 31 is decomposed by heat generated by the light absorption. As a result, the growth substrate 12 and the optical semiconductor stack 30 are separated, and the n-type semiconductor layer 32 is exposed.

  Next, as shown in FIG. 4G, the light emitting structure 121 (the optical semiconductor stack 30) separated from the growth substrate 12 is immersed in an alkaline solution at 65 ° C. to 75 ° C. for about 5 minutes. Thereby, the fine uneven | corrugated layer 32m containing many fine convex-shaped structures (what is called microcone) is formed in the exposed n-type semiconductor layer 32 surface. The formation of the fine concavo-convex layer 32m contributes to the improvement of the light extraction efficiency (the amount of light emitted from the surface of the n-type semiconductor layer / the amount of light emitted from the active layer) of the LED element. Thereafter, the Kapton tape 73 is peeled off using acetone or the like.

  Thus, the LED array 120 is completed. In addition, after separating the growth substrate 12 and the light emitting structure 121, a cut groove corresponding to the separation groove 30 d may be formed in the exposed n-type semiconductor layer 32.

  FIG. 4H is a plan view showing the LED array 120 in the element region 122A. The IVG-IVG cross section corresponds to the cross section shown in FIG. 4G.

  The element region 122A has, for example, a square shape with a side of 50 μm. In the central region of the element region 122A, for example, a circular n-side electrode 42 is arranged so that the center coincides with the element region 122A. In the peripheral region of the element region 122 </ b> A, a p-side electrode 50 is disposed so as to leave a gap with the n-side electrode 42 and surround the n-side electrode 42. The gap between the n-side electrode 42 and the p-side electrode 50 has, for example, an annular shape.

  With reference to FIG. 5, the manufacturing method of the LED device 101 is demonstrated.

  5A and 5B are cross-sectional views generally showing how the LED array 120 is divided into individual LED elements 122 and the LED elements 122 are fixed on the mounting substrate 110. First, a container 152 filled with an organic solvent 151 such as isopropyl alcohol is prepared, and the mounting substrate 110 is placed on the bottom of the container 152.

  As shown in FIG. 5A, the LED array 120 is immersed in an organic solvent 151 and ultrasonic waves are applied. The LED array 120 is divided into individual LED elements 122 by ultrasonic vibration. Specifically, the light emitting structure 121 (the optical semiconductor stack 30) is divided along the separation groove 30d to obtain the LED element 122 corresponding to the light emitting structure 121 in the element region 122A (see FIGS. 4E to 4G).

  The individual LED elements 122 are widely dispersed in the organic solvent 151 by ultrasonic vibration, and are precipitated toward the bottom of the container 152 on which the mounting substrate 110 is placed by gravity. At this time, the first substrate electrode 23 of the mounting substrate 110 is magnetized (see FIG. 3A), and the n-side electrode 42 of the LED element 122 contains a ferromagnetic material (see FIG. 4D). The LED element 122 is attracted toward the first substrate electrode 23 by a magnetic force.

  As shown in FIG. 5B, when the LED element 122 is guided and the n-side electrode 42 comes into contact with the first substrate electrode 23, the LED element 122 is formed by magnetic coupling between the n-side electrode 42 and the first substrate electrode 23. Fixing is performed on the mounting substrate 110. When there is an LED element 122 (referred to as an unfixed element) that has settled without being fixed on the mounting substrate 110, the unfixed element is dispersed again in the organic solvent 151 by applying an ultrasonic wave or the like, and is yet to be determined. Attempt to fix the landing element to the mounting substrate 110. Even at this time, the LED element 122 fixed on the mounting substrate 110 is not redispersed in the organic solvent 151 due to the magnetic coupling between the n-side electrode 42 and the first substrate electrode 23. .

  In this way, the first substrate electrode 23 is made of a spontaneously magnetized ferromagnetic material, and the n-side electrode 42 is made of a ferromagnetic material, so that the LED element 122 can be placed at a desired position on the mounting substrate 110. It can be fixed accurately. In the step of fixing the LED element on the mounting substrate, a step of preparing an element dispersion solvent in which the LED element is dispersed in an organic solvent in advance, and dropping and supplying the element dispersion solvent to the surface of the mounting substrate. It is good. In addition, the first substrate electrode 23 may be configured to be spontaneously magnetized, and the n-side electrode 42 may be configured to spontaneously magnetize.

  6A to 6C are a plan view and a cross-sectional view showing the LED element 122 fixed on the mounting substrate 110. The VIB-VIB cross section and VIC-VIC cross section in FIG. 6A correspond to the cross sectional views shown in FIGS. 6B and 6C, respectively.

  As shown in FIGS. 6A and 6B, the LED element 122 is disposed above the first substrate electrode 23 and the second substrate electrode 24. The n-side electrode 42 overlaps the first substrate electrode 23 (shown by a broken line in FIG. 6A) in the central region of the LED element 122 (FIG. 6A), and is in contact with the first substrate electrode 23. (FIG. 6B) Arranged. The p-side electrode 50 overlaps the second substrate electrode 24 (shown by a broken line in FIG. 6A) in the peripheral region of the LED element 122 (FIG. 6A), and is in contact with the second substrate electrode 24. (FIG. 6B) Arranged.

  After fixing the LED element 122 on the mounting substrate 110, the mounting substrate 110 is taken out of the organic solvent 151 (see FIG. 5B) together with the fixed LED element 122 and dried. Thereafter, the mounting substrate 110 is heated to melt the solder members contained in the first substrate electrode 23 and the second substrate electrode 24, and the first substrate electrode 23 and the n-side electrode 42 are also replaced with the second substrate electrode. 24 and the p-side electrode 50 are fused.

  As a result, the first substrate electrode 23 and the first wiring member 21w (shown by broken lines in FIG. 6A) and the n-type semiconductor layer 32 are electrically connected via the n-side electrode 42. Further, the second substrate electrode 24 and the second wiring member 22w (shown by broken lines in FIG. 6A) and the p-type semiconductor layer 34 are electrically connected via the p-side electrode 50. When power is supplied to the optical semiconductor stack 30 through the first wiring member 21w and the second wiring member 22w, light is emitted from the optical semiconductor stack 30 (particularly the active layer 33).

  Thus, the LED device 101 in which the LED element 122 is mounted on the mounting substrate 110 is completed.

  In FIG. 6A, the p-side electrode 50 is disposed so as to overlap the first wiring member 21w, but the p-side electrode 50 and the first wiring member 21w are not electrically connected. As shown in FIG. 6C, the first wiring member 21 w is formed lower than the second substrate electrode 24 (and the first substrate electrode 23), and thus is not in contact with the p-side electrode 50. Further, even if the LED element 122 is disposed so as to rotate in the plane direction around the first substrate electrode 23 (or the n-side electrode 42), the first wiring member 21w does not contact the p-side electrode 50.

  With reference to FIG. 7 and FIG. 8, the LED apparatus 102 by Example 2 is demonstrated. The LED device 102 has a configuration in which the LED element 132 according to the second embodiment is mounted on the mounting substrate 110. The LED element 132 has a configuration in which the position of the n-side electrode 42 and the position of the p-side electrode 50 are interchanged in the LED element 122 according to the first embodiment.

  FIG. 7A to FIG. 7C are cross-sectional views showing a part of how the LED device 102 is manufactured. Hereinafter, differences from the manufacturing method of the LED device 101 according to the first embodiment will be mainly described.

  First, as shown in FIG. 7A, an optical semiconductor stack 30 is formed on the growth substrate 12 by MOCVD or the like. The configuration and manufacturing method of the optical semiconductor stack 30 are the same as those in the first embodiment.

Next, the optical semiconductor stack 30 is etched by a dry etching method using chlorine gas using a resist mask to form a first separation groove 30da that defines an arbitrary region. The first separation groove 30da is formed so as to penetrate the p-type semiconductor layer 34 and the active layer 33 and reach the n-type semiconductor layer 32, for example. Thereafter, an insulating film 45 made of SiO ₂ is formed so as to cover the inside of the first separation groove 30da by a sputtering method using a resist mask.

  Next, a p-side electrode 55 containing a ferromagnetic material is formed in the vicinity of the center of the region defined by the first separation groove 30da on the optical semiconductor stack 30 by a lift-off method. The p-side electrode 55 is made of, for example, a metal multilayer film of Ti film / Ag film / Pt film / Ti film / Ni film / Au film. The p-side electrode 55 is electrically connected to the p-type semiconductor layer 34 on the surface of the p-type semiconductor layer 34.

Next, as shown in FIG. 7B, the insulating film 45 and a part of the n-type semiconductor layer 32 located on the bottom surface of the first separation groove 30da are etched by a dry etching method using a CF ₄ / Ar mixed gas using a resist mask. To do. As a result, the n-type semiconductor layer 32 is exposed on the bottom surface of the first separation groove 30da, and the second separation groove 30db is formed in the first separation groove 30da. The second separation groove 30db defines the element region 132A.

  Next, as shown in FIG. 7C, an n-side electrode 46 is formed on the inner side of the first separation groove 30da and the second separation groove 30db and on the insulating film 45 by a lift-off method. The n-side electrode 46 is electrically connected to the n-type semiconductor layer 32 through the first separation groove 30da and the second separation groove 30db, that is, through the side surfaces of the p-type semiconductor layer 34 and the active layer 33. . The n-type electrode 46 is made of, for example, a conductive multilayer film of ITO film / Ag film / TiW film / Ti film / Pt film / Au film / Ti film. The n-side electrode 46 is preferably made of a material excluding a ferromagnetic material, that is, a diamagnetic material or a paramagnetic material.

  Thus, the light emitting structure 131 is formed on the growth substrate 12. Thereafter, as in Example 1, the growth substrate 12 is separated from the light emitting structure 131 by a laser lift-off method to produce an LED array, and the LED array is divided into individual LED elements 132 in an organic solvent. The LED element 132 is mounted on the mounting substrate 110. Thereby, the LED device 102 according to the second embodiment is completed.

  8A and 8B are a plan view and a cross-sectional view showing the LED element 132 mounted on the mounting substrate 110. FIG. The VIIIB-VIIIB cross section in FIG. 8A corresponds to the cross sectional view shown in FIG. 8B.

  The LED element 132 is disposed above the first substrate electrode 23 and the second substrate electrode 24. The p-side electrode 55 is disposed in the central region of the LED element 132 so as to overlap the first substrate electrode 23 (FIG. 8A) and in contact with the first substrate electrode 23 (FIG. 8B). The n-side electrode 46 is disposed in the peripheral region of the LED element 132 so as to overlap the second substrate electrode 24 (FIG. 8A) and in contact with the second substrate electrode 24 (FIG. 8B).

  As a result, the first substrate electrode 23 and the first wiring member 21 w are electrically connected to the p-type semiconductor layer 34 via the p-side electrode 55. Further, the second substrate electrode 24 and the second wiring member 22 w and the n-type semiconductor layer 32 are electrically connected through the n-side electrode 46. When power is supplied to the optical semiconductor stack 30 through the first wiring member 21w and the second wiring member 22w, light is emitted from the optical semiconductor stack 30 (particularly the active layer 33).

  As mentioned above, although the form for implementing this invention was demonstrated, this invention is not restrict | limited to these. For example, the first wiring member may be formed on the back surface instead of the front surface of the support substrate. The mounting substrate on which the first wiring member is formed on the back surface could be manufactured by using a general through via wiring substrate manufacturing technique. It will be apparent to those skilled in the art that other various modifications, improvements, combinations, and the like can be made.

DESCRIPTION OF SYMBOLS 11 ... Support substrate, 12 ... Growth substrate, 20 ... Conductive film, 21 ... First wiring pattern, 22 ... Second wiring pattern, 23 ... First substrate electrode, 24 ... Second substrate electrode, 30 ... Optical semiconductor lamination, 31 ... base buffer layer, 32 ... n-type semiconductor layer, 33 ... active layer, 34 ... p-side semiconductor layer, 41 ... insulating film, 42 ... n-side electrode (center electrode in Example 1), 45 ... insulating film, 46 ... n-side electrode (peripheral electrode of Example 2), 50... p-side electrode (peripheral electrode of Example 1), 55... p-side electrode (center electrode of Example 2), 71. , 101 ... LED device (Example 1), 102 ... LED device (Example 2), 110 ... Mounting substrate, 120 ... LED array (Example 1), 121 ... Light emitting structure (Example 1), 122 ... LED element, 130 ... LED array (Example 2), 131 ... Light emitting structure (施例 2), 132 ... LED element (Example 2).

Claims (7)

A semiconductor light emitting device including a mounting substrate and a semiconductor light emitting element mounted on the mounting substrate,
The mounting substrate is
A support substrate;
A first substrate electrode formed on the support substrate and including a ferromagnetic material;
A second substrate electrode formed on the support substrate so as to surround at least a part of the first substrate electrode with a gap from the first substrate electrode;
With
The semiconductor light emitting element is
An optical semiconductor laminate disposed above the first substrate electrode and the second substrate electrode and having a light emitting property;
A central electrode formed in contact with the first substrate electrode at the center of the lower surface of the optical semiconductor stack and including a ferromagnetic material;
A peripheral electrode formed on the lower surface periphery of the optical semiconductor stack, in contact with the second substrate electrode, with a gap from the central electrode;
Comprising
Semiconductor light emitting device. The optical semiconductor stack has a configuration in which a p-type semiconductor layer, a light-emitting active layer, and an n-type semiconductor layer are stacked from the mounting substrate side, and the center of the surface of the p-type semiconductor layer side. In the region, the p-type semiconductor layer and the active layer are removed, and the n-type semiconductor layer is provided with a hole portion,
The center electrode is electrically connected to the n-type semiconductor layer through the hole,
The peripheral electrode is electrically connected to the p-type semiconductor layer on the surface of the p-type semiconductor layer;
The semiconductor light emitting device according to claim 1. The optical semiconductor stack has a configuration in which a p-type semiconductor layer, a light-emitting active layer, and an n-type semiconductor layer are stacked from the mounting substrate side,
The central electrode is electrically connected to the p-type semiconductor layer on the surface of the p-type semiconductor layer,
The peripheral electrode passes through the side surfaces of the p-type semiconductor layer and the active layer and is electrically connected to the n-type semiconductor layer;
The semiconductor light emitting device according to claim 1.   The semiconductor light-emitting device according to claim 1, wherein the first substrate electrode is spontaneously magnetized. The second substrate electrode and the peripheral electrode include a diamagnetic material or a paramagnetic material,
The mounting substrate further includes:
A first wiring member formed in connection with the first substrate electrode and including a diamagnetic material or a paramagnetic material;
A second wiring member formed in connection with the second substrate electrode and including a diamagnetic material or a paramagnetic material;
The semiconductor light-emitting device of any one of Claims 1-4 provided with these. A support substrate;
A first substrate electrode formed on the support substrate surface and including a spontaneously magnetized ferromagnetic material;
A second substrate electrode formed on the surface of the support substrate with a gap from the first substrate electrode and including a diamagnetic material or a paramagnetic material;
A first wiring member formed on the support substrate surface continuously with the first substrate electrode and including a diamagnetic material or a paramagnetic material;
A second wiring member formed continuously on the support substrate surface with the second substrate electrode and including a diamagnetic material or a paramagnetic material;
A mounting board comprising: Step a) A first substrate electrode formed on the support substrate and including a spontaneously magnetized ferromagnetic material, and a first substrate electrode on the support substrate with a gap between the first substrate electrode and the first substrate electrode. Preparing a mounting substrate comprising: a second substrate electrode formed so as to surround at least a part of the substrate electrode;
Step b) An optical semiconductor stack having light emission properties, a central electrode formed in a central region of the surface of the optical semiconductor stack and including a ferromagnetic material, and a gap between the central electrode and a gap in a peripheral region of the surface of the optical semiconductor stack. A step of preparing an element dispersion solvent in which a semiconductor light emitting element comprising a peripheral electrode formed by being dispersed is dispersed in a solvent;
Step c) A step of supplying the element dispersion solvent to the mounting substrate, wherein the central electrode of the semiconductor light emitting device is drawn to the first substrate electrode, so that the central electrode comes into contact with the first substrate electrode. The peripheral electrode is in contact with the second substrate electrode;
A method of manufacturing a semiconductor light emitting device having

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