JP2015141816A - Organic electroluminescent device, method of manufacturing the same, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress an optical leakage current of a transistor, and to enhance an image quality.SOLUTION: An organic electroluminescent device includes a transistor 124, a capacitance 24, and an organic EL element 30 sequentially arranged in a Z(+) direction. The capacitance 24 has an electrode 24a, an insulating film 17, and an electrode 24b. The organic EL element 30 has a pixel electrode 31, a light-emitting function layer 32, and a counter electrode 33. A third interlayer insulating film 18 covering the electrode 24b and a power line 6 are laminated. The power line 6 has an opening 6CT. A contact hole 18CT2 arranged inside the opening 6CT, and a contact hole 18CT1 arranged at a part covered with the power line 6 are provided. The contact hole 18CT2 and the contact hole 18CT1 are filled with a conductive material. The contact hole 18CT1 is arranged so as to surround at least a part of the contact hole 18CT2.

Description

  The present invention relates to an organic electroluminescence device, a method for manufacturing the organic electroluminescence device, and an electronic device on which the organic electroluminescence device is mounted.

  For example, an organic EL device in which pixels having organic electroluminescence (hereinafter referred to as organic EL) elements are arranged in a matrix has been proposed (Patent Document 1). The organic EL device described in Patent Document 1 is an active matrix light-emitting device that includes a transistor and in which pixels that emit light are arranged in a matrix.

In the light emitting region of the pixel, a reflective layer, an optical adjustment layer, an anode, a light emitting layer, and a cathode are sequentially stacked, and light emitted from the light emitting layer reciprocates between the reflective layer and the cathode, The light having the resonance wavelength corresponding to the optical distance between them is selectively amplified.
The transistor is disposed on the opposite side of the light emitting functional layer with the reflective layer interposed therebetween. The reflective layer has an opening, and the opening transmits light. A pixel contact for electrically connecting the transistor and the anode is formed inside the opening. In the pixel contact, a relay electrode formed in the same process as the reflective layer, a contact electrode, and an anode are sequentially stacked. An optical adjustment layer is disposed between the relay electrode and the contact electrode, and the relay electrode and the contact electrode are electrically connected through a contact hole formed in the optical adjustment layer.

  For example, when light emitted from the light emitting functional layer passes through the opening of the reflective layer and is incident on the transistor side, the leakage current of the transistor increases, which may cause deterioration in image quality. For this reason, in the organic EL device described in Patent Document 1, a contact electrode wider than the opening of the reflective layer is formed and the opening of the reflective layer is covered with the contact electrode, thereby suppressing light incident on the transistor side. Yes.

JP2013-238725A

  Since the optical adjustment layer is arranged between the relay electrode and the contact electrode, when light enters the optical adjustment layer, the light is reflected between the relay electrode and the contact electrode, and is reflected toward the opening of the reflection layer. Pass through the opening in the layer and proceed to the transistor side. That is, in the organic EL device described in Patent Document 1, the light incident on the optical adjustment layer disposed between the relay electrode and the contact electrode travels toward the transistor, and the leakage current of the transistor increases. was there.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An organic EL device according to this application example includes a transistor, a capacitive element, and a light emitting element that are sequentially arranged in a first direction, and the capacitive element is sequentially arranged in the first direction. A first capacitor electrode, a capacitor insulating film, and a second capacitor electrode, wherein the light emitting element includes a pixel electrode sequentially stacked in the first direction, a light emitting functional layer, A first insulating film that covers the second capacitor electrode and a reflective layer are laminated between the capacitive element and the light emitting element, and the reflective layer includes the first electrode A first contact hole having a first opening exposing one insulating film, penetrating through the first insulating film in a portion exposed by the first opening and reaching the first capacitor electrode; A second contact hole that penetrates the first insulating film in the portion covered with the reflective layer and reaches the second capacitor electrode And the first capacitor electrode and the pixel electrode are electrically connected via a first conductive material filled in the first contact hole, and the second capacitor electrode and the pixel electrode The reflective layer is electrically connected via a second conductive material filled in the second contact hole, and the second contact hole surrounds at least a part of the first contact hole. It is arranged.

  In the upward direction, that is, in the first direction, a first capacitor electrode, a capacitor insulating film, a second capacitor electrode, a first insulating film, a reflective layer, a pixel electrode, a light emitting functional layer, The counter electrode is arranged in order. The reflective layer has a first opening, and the first opening transmits light. A first contact hole is disposed inside the first opening. Since the first contact hole is filled with the first conductive material (light-shielding material), the region where the first contact hole is formed blocks the incidence of light. Therefore, a light transmission region is formed between the first opening and the first contact hole. Part of the light emitted from the light emitting functional layer passes through the light transmission region and proceeds (incides) to the transistor side.

  In the downward direction, that is, in the direction opposite to the first direction, the first capacitor electrode and the second capacitor electrode are arranged. Therefore, light that travels downward through the light transmission region is blocked by the first capacitor electrode and the second capacitor electrode, and does not easily travel to the transistor side.

  A second contact hole surrounding at least a part of the first contact hole is disposed in the lateral direction, that is, in a direction crossing the direction opposite to the first direction. Since the second contact hole is filled with the second conductive material (light shielding material), the region where the second contact hole is formed blocks the incidence of light. Therefore, light that travels in the lateral direction through the light transmission region is blocked by the region where the second contact hole is formed, and does not easily travel to the transistor side.

  As described above, in this application example, a light shielding portion such as the second contact hole filled with the first capacitor electrode, the second capacitor electrode, and the second conductive material is provided between the reflective layer and the transistor. Since it is provided, the light that has passed through the light transmission region between the first opening and the first contact hole is blocked by the light-shielding portion and hardly travels to the transistor side. That is, this application example has a configuration in which the light shielding property is improved by the light shielding portion disposed between the reflective layer and the transistor.

  Therefore, the light that passes through the opening of the reflective layer, which is a problem of the publicly known technology (Japanese Patent Laid-Open No. 2013-238725), and travels toward the transistor is blocked by a light shielding portion provided between the reflective layer and the transistor. It becomes difficult to advance to the transistor side. Therefore, the organic EL device of the present application has higher light shielding properties than known organic EL devices, suppresses adverse effects of light such as transistor characteristic changes and image quality degradation, and provides high-quality display. Can do.

  Application Example 2 An organic EL device according to this application example includes a transistor, a capacitive element, and a light emitting element that are sequentially arranged in a first direction, and the capacitive element is sequentially arranged in the first direction. A first capacitor electrode, a capacitor insulating film, and a second capacitor electrode, wherein the light emitting element includes a pixel electrode sequentially stacked in the first direction, a light emitting functional layer, A first insulating film covering the second capacitive electrode, a reflective layer, and a second insulating film are sequentially stacked between the capacitive element and the light emitting element. , Having a first opening that penetrates the second insulating film and the reflective layer and exposes the first insulating film, and the portion of the first insulating film exposed by the first opening is 3, the third insulating film, and the portion of the first insulating film exposed through the first opening through the first insulating film. A first contact hole that reaches one capacitor electrode, and a second contact hole that passes through the first insulating film in a portion covered with the reflective layer and reaches the second capacitor electrode, The first capacitor electrode and the pixel electrode are electrically connected via a first conductive material filled in the first contact hole, and the second capacitor electrode and the reflective layer are connected to the second electrode. And the second contact hole is disposed so as to surround at least a part of the first contact hole. And

  In the upward direction, that is, in the first direction, the first capacitor electrode, the capacitor insulating film, the second capacitor electrode, the first insulating film, the reflective layer, the second insulating film, and the pixel electrode The light emitting functional layer and the counter electrode are arranged in this order. A first opening that penetrates through the second insulating film and the reflective layer and exposes the first insulating film, and that penetrates the third insulating film and the first insulating film inside the first opening. Contact holes are arranged. Since the first contact hole is filled with the first conductive material (light-shielding material), the region where the first contact hole is formed blocks the incidence of light. Therefore, a light transmission region is formed between the first opening and the first contact hole. Part of the light emitted from the light emitting functional layer passes through the light transmission region and proceeds (incides) to the transistor side.

  In the downward direction, that is, in the direction opposite to the first direction, the first capacitor electrode and the second capacitor electrode are arranged. Therefore, light that travels downward through the light transmission region is blocked by the first capacitor electrode and the second capacitor electrode, and does not easily travel to the transistor side.

  A second contact hole surrounding at least a part of the first contact hole is disposed in the lateral direction, that is, in a direction crossing the direction opposite to the first direction. Since the second contact hole is filled with the second conductive material (light shielding material), the region where the second contact hole is formed blocks the incidence of light. Therefore, light that travels in the lateral direction through the light transmission region is blocked by the region where the second contact hole is formed, and does not easily travel to the transistor side.

  As described above, in this application example, a light-shielding portion such as the first capacitor electrode, the second capacitor electrode, and the second contact hole filled with the second conductive material is provided between the reflective layer and the transistor. Therefore, the light that has passed through the light transmission region between the first opening and the first contact hole is blocked by the light-shielding portion and hardly travels to the transistor side. That is, this application example has a configuration in which the light shielding property is improved by the light shielding portion disposed between the reflective layer and the transistor.

  Therefore, the light that passes through the opening of the reflective layer, which is a problem of the publicly known technology (Japanese Patent Laid-Open No. 2013-238725), and travels toward the transistor is blocked by a light shielding portion provided between the reflective layer and the transistor. It becomes difficult to advance to the transistor side. Therefore, the organic EL device of the present application has higher light shielding properties than known organic EL devices, suppresses adverse effects of light such as transistor characteristic changes and image quality degradation, and provides high-quality display. Can do.

  Application Example 3 In the organic EL device according to the application example, the second capacitor electrode has a second opening exposing the capacitor insulating film, and at least a part of the second opening is a flat surface. The first contact hole is disposed inside the first opening and the second opening, and overlaps with the first opening as viewed, and passes through the first insulating film and the capacitive insulating film. It is preferable that the first capacitor electrode is formed.

The first contact hole is formed to electrically connect the pixel electrode and the first capacitor electrode. That is, the first contact hole is formed in a region where the pixel electrode and the first capacitor electrode overlap in a plane. The second contact hole is formed to electrically connect the reflective layer and the second capacitor electrode. That is, the second contact hole is formed in a region where the reflective layer and the second capacitor electrode overlap in a plane.
A second opening exposing the first capacitor electrode is provided in the second capacitor electrode, and the first contact hole is provided inside the second opening, so that the second contact hole is surrounded by the second contact hole. Contact holes can be formed.

  Application Example 4 In the organic EL device according to the application example described above, the first conductive material and the second conductive material include a barrier metal disposed on the first insulating film side, and a barrier metal Preferably, the barrier metal is composed of tungsten disposed on the opposite side of the first insulating film, and the barrier metal includes titanium nitride.

  Tungsten is excellent in workability, heat resistance, light shielding properties, and the like. By filling tungsten inside the first contact hole and the second contact hole, the region where the first contact hole is formed and the second contact hole are formed. The region where the contact hole is formed has an excellent light shielding property.

  Titanium nitride is preferable as a constituent material of a barrier metal disposed between the first insulating film and tungsten because it has excellent adhesion and workability with the first insulating film (for example, silicon oxide) and tungsten. . In addition, titanium nitride is inferior in light-shielding properties compared to tungsten, but has a property of absorbing part of light, so a barrier metal containing titanium nitride is disposed between the first insulating film and tungsten. By doing so, reflection of light by the conductive material filled in the first contact hole or the second contact hole can be suppressed.

  Application Example 5 In the organic EL device according to the application example, the first capacitor electrode and the pixel electrode are electrically connected to one of a source and a drain of the transistor, and the second capacitor electrode and the pixel electrode It is preferable that a first potential is supplied to the reflective layer, and a second potential that is lower than the first potential is supplied to the counter electrode.

  In the light-emitting element, a pixel electrode, a light-emitting functional layer, and a counter electrode are stacked, and a first capacitor is formed between the pixel electrode and the counter electrode. The first capacitor electrode, the capacitor insulating film, and the second capacitor electrode are stacked, and a second capacitor (capacitor element) is formed between the first capacitor electrode and the second capacitor electrode.

  The first capacitor electrode and the pixel electrode are electrically connected, a first potential is supplied to the second capacitor electrode, and a second potential lower than the first potential is supplied to the counter electrode. ing. When the first potential and the second potential are constant, the first capacitor and the second capacitor are connected in parallel to the potential change of the pixel electrode. That is, this application example has a configuration in which the first capacitor and the second capacitor are connected in parallel between the pixel electrode and the counter electrode.

  In black display in which the light emitting functional layer does not emit light, when a leakage current (light leakage current) of the transistor flows to the light emitting element side and charges are accumulated in the capacitor between the pixel electrode and the counter electrode, The voltage between the pixel electrode and the counter electrode increases. In this application example, the capacitance value of the capacitor formed between the pixel electrode and the counter electrode is larger than that in the conventional configuration in which the second capacitor is not formed. The voltage change between them becomes small.

  For example, in the conventional configuration, if the voltage between the pixel electrode and the counter electrode becomes too large due to the leakage current of the transistor, the light emitting functional layer that should not emit light (black display) may emit light and the image quality may deteriorate. . In this application example, the voltage change between the pixel electrode and the counter electrode due to the leakage current of the transistor can be reduced as compared with the conventional configuration, so that the light emitting functional layer that should not emit light emits light and the image quality deteriorates. Can be suppressed.

  Application Example 6 An electronic apparatus according to this application example includes the organic EL device described in the application example.

  The organic EL device described in the above application example has improved light shielding properties, suppresses adverse effects of light such as transistor characteristic changes and image quality degradation, and can provide a high-quality display. Therefore, an electronic device including the organic EL device described in the application example can provide a high-quality display. For example, the organic EL device described in the above application example is applied to an electronic device having a display unit such as a head mounted display, a head-up display, an electronic viewfinder of a digital camera, a portable information terminal, a navigator, and the like. Can be provided.

  Application Example 7 A method for manufacturing an organic EL device according to this application example includes a third insulating film, a first capacitor electrode, a capacitor insulating film, a second capacitor electrode, which are sequentially stacked in a first direction, A first contact hole including a first insulating film, a reflective layer, and a second insulating film, and penetrating through the third insulating film and the first insulating film to reach the first capacitor electrode; And a first conductive material filled in the first contact hole, wherein the reflective layer and the second insulating film are formed on the first insulating film. And performing an anisotropic etching in a second direction from the second insulating film toward the first capacitor electrode on the second insulating film and the reflective layer, and the second direction. Forming a first opening that is surrounded by a wall surface along the surface to expose the first insulating film, and a portion that covers the wall surface Forming a third insulating film having a portion disposed inside the portion covering the wall surface and covering the surface of the first insulating film, and the third insulating film and the first insulation. The film is subjected to anisotropic etching in the second direction, and the portion of the third insulating film and the first insulating film in the portion covering the surface of the first insulating film are disposed inside the portion covering the wall surface. And forming a first contact hole reaching the first capacitor electrode and filling the first contact hole with the first conductive material.

  A first opening surrounded by the wall surface along the second direction is formed through the second insulating film and the reflective layer, exposing the first insulating film. Next, a third insulating film that covers the wall surface of the first opening and the surface of the first insulating film inside the wall surface of the first opening is formed. At this time, the third insulating film has different dimensions in the second direction between a portion covering the wall surface and a portion covering the surface of the first insulating film. Specifically, the dimension in the second direction of the third insulating film covering the wall surface is larger than the dimension in the second direction of the third insulating film covering the surface of the first insulating film ( Thicken).

  The dimension in the direction intersecting the second direction of the third insulating film in the portion covering the wall surface depends on the film thickness of the third insulating film at the time of deposition. For example, when the third insulating film is deposited by a film formation method having excellent step coverage, the dimension in the direction intersecting the second direction of the third insulating film covering the wall surface is the same as that of the first insulating film. It becomes equal to the dimension of the 3rd insulating film of the part which covers the surface in the 2nd direction.

  With this configuration, when anisotropic etching in the second direction is performed on the third insulating film, the third insulating film that covers the wall surface is used as an etching mask, and the first insulating film that covers the surface of the first insulating film is used. 3 insulating film and the first insulating film can be etched in the second direction. In the anisotropic etching in the second direction, the portion of the third insulating film covering the wall surface is difficult to be etched in the direction intersecting the second direction, so the third portion of the portion covering the surface of the first insulating film Even when the insulating film and the first insulating film are etched in the second direction, the portion of the third insulating film covering the wall surface remains.

Accordingly, the third insulating film covering the wall surface is used as an etching mask, and the third insulating film and the first insulating film covering the surface of the first insulating film are formed inside the third insulating film covering the wall surface. A first contact hole that penetrates through the insulating film and reaches the first capacitor electrode can be formed. That is, the first contact hole can be formed in a self-aligned manner inside the first opening by using the third insulating film covering the wall surface as an etching mask without passing through the photolithography process.
Since the first contact hole is filled with the first conductive material, the region where the first contact hole is formed becomes a light shielding region. A region between the first opening and the first contact hole becomes a light transmission region.

  The manufacturing method of this application example is less affected by the alignment error as compared with the conventional process in which the first contact hole is formed inside the first opening through the photolithography process. Therefore, the first opening and the first contact are eliminated. The dimension between the holes can be made smaller and more uniform. Therefore, the manufacturing method of this application example can make the light transmission region smaller and improve the light shielding property than the conventional process.

  Application Example 8 In the method for manufacturing an organic EL device according to the application example, it is preferable that the first insulating film is silicon oxide and the third insulating film is silicon nitride.

  When anisotropic etching in the second direction is performed by a dry etching method using a fluorine-based gas, silicon oxide is etched faster than silicon nitride. Therefore, when the first insulating film is formed of silicon oxide and the third insulating film is formed of silicon nitride, the first insulating film is more than the third insulating film in anisotropic etching in the second direction. It is etched as soon as possible. Therefore, using the third insulating film covering the wall surface as an etching mask, the third insulating film covering the surface of the first insulating film and the first insulating film inside the third insulating film covering the wall surface It is easy to form a first contact hole that penetrates the insulating film.

1 is a schematic plan view showing an outline of an organic EL device according to Embodiment 1. FIG. 1 is a diagram illustrating an electrical configuration of an organic EL device according to Embodiment 1. FIG. The figure which shows the electrical structure of a pixel. The figure which shows the relationship between the elapsed time from the beginning of the light emission period in 1 frame, and the electric potential of a pixel electrode. The schematic plan view which shows the outline | summary of a luminescent pixel. FIG. 6 is a schematic cross-sectional view of the organic EL device taken along line A-A ′ in FIG. 5. FIG. 3 is a schematic cross-sectional view of a pixel contact region. FIG. 3 is a schematic plan view of a pixel contact region viewed from the Z (+) direction. FIG. 5 is a schematic cross-sectional view of a pixel contact region of an organic EL device according to Embodiment 2. The schematic plan view of a pixel contact area. The process flow which shows the manufacturing method of a pixel contact area | region. The schematic sectional drawing which shows the state of the pixel contact area | region after passing through each process. The schematic sectional drawing which shows the state of the pixel contact area | region after passing through each process. FIG. 5 is a schematic diagram of a head mounted display according to a third embodiment. FIG. 10 is a schematic plan view of a pixel contact region of an organic EL device according to Modification 2. FIG. 10 is a schematic plan view of a pixel contact region of an organic EL device according to Modification 3.

  Embodiments of the present invention will be described below with reference to the drawings. Such an embodiment shows one aspect of the present invention and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. In each of the following drawings, the scale of each layer or each part is made different from the actual scale so that each layer or each part can be recognized on the drawing.

(Embodiment 1)
"Outline of organic EL device"
The organic EL device 100 according to Embodiment 1 is a self-luminous display device in which the light emitting pixels 20 are arranged in a matrix.
FIG. 1 is a schematic plan view showing an outline of the organic EL device according to the first embodiment. First, an outline of the organic EL device 100 according to the present embodiment will be described with reference to FIG.

  As shown in FIG. 1, the organic EL device 100 according to this embodiment includes an element substrate 10 and a sealing substrate 70. Both substrates are bonded by a resin layer 71 (see FIG. 6) described later.

The element substrate 10 includes a light emitting pixel 20B that can emit blue (B) light, a light emitting pixel 20G that can emit green (G) light, and a light emitting pixel 20R that can emit red (R) light in a matrix. Display area E. In the organic EL device 100, the light emitting pixel 20B, the light emitting pixel 20G, and the light emitting pixel 20R serve as a display unit, and a full color display is provided.
In the following description, the light emitting pixel 20B, the light emitting pixel 20G, and the light emitting pixel 20R may be referred to as the light emitting pixel 20.

  In the display area E, an optical distance adjustment layer 28 is provided. The film thickness of the optical distance adjustment layer 28 is such that the optical distance adjustment layer 28B provided in the light emitting pixel 20B, the optical distance adjustment layer 28G provided in the light emission pixel 20G, and the optical distance adjustment provided in the light emission pixel 20R. The layer 28R increases in order.

  A plurality of external connection terminals 103 are arranged along the first side of the element substrate 10. A data line drive circuit 101 is provided between the plurality of external connection terminals 103 and the display area E. A scanning line driving circuit 102 is provided between the second and third sides that are orthogonal to the first side and face each other, and the display area E.

  The sealing substrate 70 is smaller than the element substrate 10 and is disposed so that the external connection terminals 103 are exposed. The sealing substrate 70 is a light-transmitting insulating substrate, and a quartz substrate, a glass substrate, or the like can be used. The sealing substrate 70 has a role of protecting the later-described organic EL element 30 (see FIG. 6) disposed in the display area E from being damaged, and is provided wider than the display area E.

Hereinafter, the direction along the first side is defined as the X direction. A direction along the other two sides (second side and third side) orthogonal to the first side and facing each other is defined as a Y direction. A direction from the element substrate 10 toward the sealing substrate 70 is defined as a Z (+) direction.
The Z (+) direction is an example of the “first direction” in the present invention.

  FIG. 2 is a diagram illustrating an electrical configuration of the organic EL device. FIG. 3 is a diagram illustrating an electrical configuration of the light emitting pixel.

  As shown in FIG. 2, the element substrate 10 is provided with m rows of scanning lines 12 extending in the X direction and n columns of data lines 14 extending in the Y direction. A pixel circuit 110 is provided corresponding to the intersection of the m rows of scanning lines 12 and the n columns of data lines 14. The pixel circuit 110 forms part of the light emitting pixel 20. In the display area E, m row × n column pixel circuits 110 are arranged in a matrix.

The power line 19 is provided for each column along the data line 14. A reset potential Vorst for initialization is supplied (powered) to the power line 19. Further, although not shown, three control lines for supplying control signals Gcmp, Gel, and Gorst are provided in parallel with the scanning lines 12.
The scanning line 12 is electrically connected to the scanning line driving circuit 102. The data line 14 is electrically connected to the data line driving circuit 101. The scanning line driving circuit 102 is supplied with a control signal Ctr1 for controlling the scanning line driving circuit 102. The data line driving circuit 101 is supplied with a control signal Ctr2 for controlling the data line driving circuit 101.

The scanning line driving circuit 102 scans the scanning lines 12 in order for each row over the period of the frame, scanning signals Gwr (1), Gwr (2), Gwr (3), ..., Gwr (m-1). , Gwr (m) is generated according to the control signal Ctr1. Further, the scanning line driving circuit 102 supplies control signals Gcmp, Gel, and Gorst to the control lines in addition to the scanning signal Gwr.
The frame period is a period in which an image for one cut (frame) is displayed on the organic EL device 100. For example, if the frequency of the vertical synchronization signal included in the synchronization signal is 120 Hz, the period of one frame Is about 8.3 milliseconds.

  The data line driving circuit 101 applies the data signals Vd (1), Vd (2), Vd (2), the potentials corresponding to the gradation data of the pixel circuit 110 to the pixel circuit 110 located in the row selected by the scanning line driving circuit 102. .., Vd (n) is supplied to the data lines 14 in the first, second,.

As shown in FIG. 3, the pixel circuit 110 includes P-channel MOS transistors 121, 122, 123, 124, 125, an organic EL element 30, a capacitor 21, and a capacitor 24. The pixel circuit 110 is supplied with a scanning signal Gwr, control signals Gcmp, Gel, Gorst, and the like.
The organic EL element 30 is an example of the “light emitting element” in the present invention. The capacitor 24 is an example of the “capacitor element” in the present invention. The transistor 124 is an example of the “transistor” in the present invention.

The source of the transistor 121 is electrically connected to the power supply line 6, and the drain is electrically connected to the source of the transistor 123 or the other of the drain and the source of the transistor 124. The power supply line 6 is supplied with a potential Vel which is the higher power supply side in the pixel circuit 110. The transistor 121 functions as a driving transistor that passes a current according to the voltage between the gate and the source of the transistor 121.
The power supply line 6 is provided on substantially the entire display area E (see FIG. 5), and is an example of the “reflection layer” in the present invention. The potential Vel supplied to the power supply line 6 is an example of the “first potential” in the present invention.

The transistor 122 has a gate electrically connected to the scanning line 12 and one of a source and a drain electrically connected to the data line 14. The other of the source and the drain of the transistor 122 is electrically connected to the gate of the transistor 121, one end of the capacitor 21, and one of the source and the drain of the transistor 123. The transistor 122 is electrically connected between the gate of the transistor 121 and the data line 14, and functions as a writing transistor that controls the electrical connection between the gate of the transistor 121 and the data line 14.
Note that a wiring that electrically connects the gate of the transistor 121, the other of the source and the drain of the transistor 122, one of the source and the drain of the transistor 123, and one end of the capacitor 21 is referred to as a gate node g.

  The transistor 123 has a gate electrically connected to a control line and is supplied with a control signal Gcmp. The transistor 123 functions as a threshold compensation transistor that controls electrical connection between the gate and drain of the transistor 121.

The gate of the transistor 124 is electrically connected to the control line, and the control signal Gel is supplied. The drain of the transistor 124 is electrically connected to the source of the transistor 125 and the pixel electrode 31 of the organic EL element 30. The transistor 124 functions as a light emission control transistor that controls electrical connection between the drain of the transistor 121 and the pixel electrode 31 of the organic EL element 30.
Note that the drain of the transistor 124 electrically connected to the pixel electrode 31 is an example of “one of the source and the drain of the transistor” in the present invention.

The gate of the transistor 125 is electrically connected to the control line, and the control signal Gorst is supplied. The drain of the transistor 125 is electrically connected to the power supply line 19 and is supplied with a reset potential Vorst. The transistor 125 functions as an initialization transistor that controls electrical connection between the power supply line 19 and the pixel electrode 31 of the organic EL element 30.
Note that a wiring that electrically connects the drain of the transistor 124, the source of the transistor 125, and the pixel electrode 31 of the organic EL element 30 is referred to as a relay node N.

  The organic EL element 30 has a structure in which a light emitting functional layer 32 is sandwiched between a pixel electrode 31 and a counter electrode 33 facing each other. In the organic EL element 30, a capacitor 35 is formed between the pixel electrode 31 and the counter electrode 33 facing each other. That is, one end of the capacitor 35 is the pixel electrode 31 and is electrically connected to the relay node N. The other end of the capacitor 35 is a counter electrode 33 and is connected to the power supply line 8. The capacitance value of the capacitor 35 is Cel.

The pixel electrode 31 is electrically connected to the drain of the transistor 124 and the source of the transistor 125. The counter electrode 33 is a common electrode provided across the plurality of light emitting pixels 20 and is electrically connected to the power supply line 8. The power supply line 8 is supplied with a potential Vct which is the lower side of the power supply in the pixel circuit 110. That is, the potential Vct is supplied to the counter electrode 33 (the other end of the capacitor 35) through the power supply line 8.
The potential Vct is an example of the “second potential” in the present invention.

The pixel electrode 31 is an anode that supplies holes to the light emitting functional layer 32. The counter electrode 33 is a cathode that supplies electrons to the light emitting functional layer 32. The holes supplied from the pixel electrode 31 and the electrons supplied from the counter electrode 33 emit light by being combined in the light emitting functional layer 32. The light emitting functional layer 32 has a threshold potential Vth that emits light, and emits light when the potential V1 of the pixel electrode 31 with respect to the potential (potential Vct) of the counter electrode 33 becomes higher than the threshold potential Vth.
Hereinafter, the potential V1 of the pixel electrode 31 with respect to the potential of the counter electrode 33 is referred to as the potential V1 of the pixel electrode 31.

  One end of the capacitor 21 is electrically connected to the gate of the transistor 121. The other end of the capacitor 21 is electrically connected to the power line 6. The capacitor 21 functions as a storage capacitor that holds the voltage between the gate and the source of the transistor 121.

One end of the capacitor 24 is electrically connected to the power supply line 6 and supplied with the potential Vel. The other end of the capacitor 24 is electrically connected to the pixel electrode 31 (the other end of the capacitor 35) via the relay node N. One end of the capacitor 24 electrically connected to the power line 6 is an electrode 24b (see FIG. 6) of the capacitor 24 described later, and the other end of the capacitor 24 electrically connected to the pixel electrode 31 is described later. This is the electrode 24a of the capacitor 24 (see FIG. 6). The capacitance value of the capacitor 24 is Ca.
The other end (electrode 24a) of the capacitor 24 is an example of the “first capacitor electrode” in the present invention. One end (electrode 24b) of the capacitor 24 is an example of the “second capacitor electrode” in the present invention.

  In this manner, one end (electrode 24b) of the capacitor 24 is electrically connected to the power supply line 6, and is supplied with the potential Vel that is on the higher side of the power supply. The other end (counter electrode 33) of the capacitor 35 is electrically connected to the power supply line 8, and is supplied with a potential Vct that is on the lower side of the power supply. The other end (electrode 24a) of the capacitor 24 and one end (pixel electrode 31) of the capacitor 35 are electrically connected via the relay node N. Since the potential Vel supplied to one end (electrode 24b) of the capacitor 24 and the potential Vct supplied to the other end (counter electrode 33) of the capacitor 35 are constant, The capacitor 24 and the capacitor 35 are electrically connected in parallel.

"Operation of organic EL device"
In the organic EL device 100, the scanning lines 12 in the 1st to m-th rows are sequentially scanned every horizontal scanning period in one frame period. The scanning period is roughly divided into an initialization period, a compensation period, a writing period, and a light emission period. After the elapse of one frame period, the next scanning period is reached again. For this reason, a cycle of (light emission period) → initialization period → compensation period → writing period → (light emission period) is repeated.

In the initialization period, the transistor 125 is turned on and the transistors 122, 123, and 124 are turned off. As a result, the path of the current supplied to the organic EL element 30 is cut off, and the pixel electrode 31 of the organic EL element 30 is blocked. The potential is reset to the reset potential Vorst.
For example, when the display state changes from a high luminance display state to a low luminance display state, a high voltage state when the luminance is high (a large current flows) is maintained when the potential of the pixel electrode 31 is not reset. Therefore, even if a small current is tried to flow next, an excessive current flows and it becomes difficult to achieve a low luminance display state. In this embodiment, since the potential of the pixel electrode 31 is reset, the reproducibility on the low luminance side is improved.

  Note that the reset potential Vrst with respect to the potential Vct is set to be lower than the threshold potential Vth at which the light emitting functional layer 32 emits light. In the initialization period, the compensation period, and the writing period, the transistor 125 is turned on, and the potential of the pixel electrode 31 is maintained at the reset potential Vorst (the state in which the light emitting functional layer 32 does not emit light).

  In the compensation period, the transistors 122, 123, and 125 are turned on, and the transistor 124 is turned off. Since the transistor 123 is turned on, the transistor 121 is diode-connected. At the end of the compensation period, the potential of the gate node g is set to a potential that compensates for variations in the threshold voltage of the transistor 121. As a result, it is possible to compensate for variations in the threshold voltage of the transistor 121 for each pixel circuit 110 and to achieve high-quality display that ensures display uniformity.

  In the writing period, the transistors 122 and 125 are turned on, and the transistors 123 and 124 are turned off. Since the transistor 123 is turned off, the diode connection of the transistor 121 is released. At the end of the writing period, the potential of the gate node g is set to a potential based on the data signal Vd that defines the luminance of the organic EL element 30.

  In the light emission period, the transistor 124 is turned on and the transistors 122, 123, and 125 are turned off. Therefore, the transistor 121 supplies a current corresponding to the voltage between the gate and the source to the organic EL element 30. Through the above-described compensation period and writing period, a current corresponding to the gradation level is supplied to the organic EL element 30 in a state where the threshold voltage of the transistor 121 is compensated. The light emitting functional layer 32 emits light with luminance according to the current flowing from the pixel electrode 31 toward the counter electrode 33.

"State of potential of pixel electrode in black display"
Next, the state of the potential of the pixel electrode in black display will be described.
As described above, in the light emission period, the transistor 121 supplies a current corresponding to the voltage between the gate and the source to the organic EL element 30. In black display, the transistor 121 is substantially turned off, no current is supplied to the organic EL element 30 side, and the light emitting functional layer 32 does not emit light.

That is, in the light emission period of black display, the transistors 121, 122, 123, and 125 are turned off. When the transistors 121, 122, 123, and 125 are in an off state, off currents flow through the transistors 121, 122, 123, and 125, and these off currents flow toward the organic EL element 30.
Specifically, if the off-current flowing through the transistor 121 is Ioff1, the off-current flowing through the transistor 122 and the transistor 123 is Ioff2, and the off-current flowing through the transistor 125 is Ioff3, these off-currents pass through the transistor 124 during the light emission period of black display. Then, it flows to the organic EL element 30 side and is stored as a charge Q in a capacitor formed on the organic EL element 30 side.

  The elapsed time from the beginning of the light emission period is Tf, and the charge Q accumulated in the capacitor formed on the organic EL element 30 side is expressed by the following formula (1).

  In the present embodiment, since the capacitor 35 and the capacitor 24 are connected in parallel, the capacitor is formed on the organic EL element 30 side, so that the charge Q is accumulated in the capacitor 35 and the capacitor 24. Accordingly, the potential V1 of the pixel electrode 31 at the elapsed time Tf is expressed by the following equation (2).

  In the conventional configuration in which the capacitor 24 is not formed, that is, in the conventional configuration in which the capacitor 35 is formed on the organic EL element 30 side, the charge Q is accumulated in the capacitor 35. Accordingly, the potential V1 of the pixel electrode 31 at the elapsed time Tf is expressed by the following formula (3).

FIG. 4 is a diagram showing the relationship between the elapsed time from the initial light emission period in one frame and the potential of the pixel electrode. In the figure, the horizontal axis represents the elapsed time Tf, and the vertical axis represents the potential V1 of the pixel electrode. This embodiment (Formula (2)) corresponds to Condition 1 and is indicated by a solid line. The conventional configuration (formula (3)) corresponds to condition 2 and is indicated by a broken line.
As described above, in the initialization period, the compensation period, and the writing period of one frame, the potential V1 of the pixel electrode 31 is supplied with the reset potential Vrosst, so that the pixel electrode 31 in the initial period of the light emission period is supplied. The potential V1 is Vrost.

  As shown in FIG. 4, the potential V1 of the pixel electrode 31 during the light emission period depends on condition 1 (this embodiment) and condition 2 (conventional configuration) according to off currents Ioff1, Ioff2, and Ioff3 flowing through the transistors 121, 122, 123, and 125. In both cases, when the elapsed time Tf increases, that is, when the charge Q is accumulated in the capacitor formed on the organic EL element 30 side, the potential V1 of the pixel electrode 31 increases. Since the capacitance value of the capacitor formed on the organic EL element 30 side is larger in the condition 1 (the present embodiment) than in the condition 2 (conventional configuration), the change in the potential V1 of the pixel electrode 31 is the condition 2 ( Condition 1 (this embodiment) is smaller than the conventional configuration.

  Under the condition 2 (conventional configuration), for example, if the off-currents Ioff1, Ioff2, and Ioff3 flowing through the transistors 121, 122, 123, and 125 are increased due to intrusion of light, the change in the potential V1 of the pixel electrode 31 may be too large. . If the change in the potential V1 of the pixel electrode 31 becomes too large, for example, a region F surrounded by a two-dot chain line in the drawing, that is, a region where the potential V1 of the pixel electrode 31 is higher than the threshold potential Vth may occur. . In the region F, since the potential V1 of the pixel electrode 31 is higher than the threshold potential Vth, the light emitting functional layer 32 emits light. That is, since the light emitting pixels 20 that should be displayed in black emit light, a problem such as a decrease in contrast and display unevenness occurs, and image quality deteriorates.

  Condition 1 (this embodiment) has a smaller change in the potential V1 of the pixel electrode 31 than condition 2 (conventional configuration). For this reason, even if the potential V1 of the pixel electrode 31 is higher than the threshold potential Vth in the condition 2 (conventional configuration), the potential V1 of the pixel electrode 31 is higher than the threshold potential Vth in the condition 1 (this embodiment). In other words, the low state is maintained, and the problem that the light-emitting pixel 20 that should display black emits light is suppressed.

As described above, since the pixel circuit 110 has the capacitor 24 in this embodiment, the adverse effects (deterioration of image quality) of the off-currents Ioff1, Ioff2, and Ioff3 flowing through the transistors 121, 122, 123, and 125 are suppressed. Can do.
Furthermore, the present embodiment has an excellent configuration in which off currents Ioff1, Ioff2, and Ioff3 flowing through the transistors 121, 122, 123, and 125 are reduced. The details will be described below.

  "Outline of light-emitting pixels"

FIG. 5 is a schematic plan view showing an outline of the light emitting pixel. In the figure, among the constituent elements of the light emitting pixel 20, the power supply line 6, the pixel electrode 31, and the insulating film 29 are shown, and the other constituent elements are not shown. In addition, a two-dot chain line in the drawing indicates an outline of the light emitting pixel 20.
First, an outline of the light emitting pixel 20 will be described with reference to FIG.

  As shown in FIG. 5, each of the light emitting pixels 20B, 20G, and 20R has a rectangular shape in plan view, and the longitudinal direction is arranged along the Y direction. The light emitting pixel 20 includes a power supply line 6, a pixel electrode 31, and an insulating film 29. The power supply line 6, the pixel electrode 31, and the insulating film 29 are arranged in the Z direction (see FIG. 6).

  The power supply line 6 is provided on substantially the entire display area E, and has an opening 6CT for each light emitting pixel 20. A relay electrode 6-1 formed in the same process as the power supply line 6 is provided inside the opening 6CT. The power line 6 is made of a light reflective conductive material and has a function as a light reflective film.

Furthermore, the power supply line 6 and the relay electrode 6-1 have a function as a light shielding film. That is, in the light emitting pixel 20, a region between the opening 6CT (power supply line 6) and the relay electrode 6-1 is a light transmission region.
The opening 16CT is an example of the “first opening” in the present invention.

  The pixel electrode 31 is formed of a light transmissive material such as ITO (Indium Tin Oxide), for example, has a rectangular shape elongated in the Y direction, and is provided in each of the light emitting pixels 20B, 20G, and 20R.

  The insulating film 29 is made of a light-transmitting insulating film and is provided so as to cover the pixel electrode 31. The insulating film 29 has an opening 29CT that exposes a part of the pixel electrode 31. Similarly to the pixel electrode 31, the opening 29CT has a rectangular shape that is elongated in the Y direction.

  The part of the pixel electrode 31 that is not covered with the insulating film 29, that is, the pixel electrode 31 exposed through the opening 29CT is in contact with the light emitting functional layer 32, supplies current to the light emitting functional layer 32, and causes the light emitting functional layer 32 to emit light. . Therefore, the opening 29CT provided in the insulating film 29 becomes a light emitting region of the light emitting pixel 20. The insulating film 29 defines a light emitting region of the light emitting pixel 20 and has a role of electrically insulating adjacent pixel electrodes 31 from each other.

"Cross-sectional structure of organic EL device"
6 is a schematic cross-sectional view of the organic EL device taken along line AA ′ of FIG. That is, FIG. 6 is a schematic cross-sectional view of the organic EL device 100 in the light emitting pixel 20G.
In FIG. 6, the transistors 121 and 124 of the pixel circuit 110 are illustrated, and the transistors 122, 123, and 125 are not illustrated. Note that the transistors 122, 123, and 125 have the same configuration as the transistors 121 and 124.
Hereinafter, the cross-sectional structure of the organic EL device 100 will be described with reference to FIG.

As shown in FIG. 6, the organic EL device 100 includes an element substrate 10, a sealing substrate 70, and a resin layer 71 sandwiched between the element substrate 10 and the sealing substrate 70.
The resin layer 71 has a role of bonding the element substrate 10 and the sealing substrate 70, and for example, an epoxy resin or an acrylic resin can be used.

  The element substrate 10 is provided with a pixel circuit 110, a sealing layer 40, a color filter 50, and the like. Further, the pixel circuit 110 is provided with transistors 121 and 124, an organic EL element 30, and the like.

The light emitted from the organic EL element 30 passes through the color filter 50 of the element substrate 10 and is emitted as display light from the sealing substrate 70 side. That is, the organic EL device 100 has a top emission structure.
Since the organic EL device 100 has a top emission structure, an opaque ceramic substrate or semiconductor substrate can be used as the base material 10s of the element substrate 10 in addition to a transparent quartz substrate or glass substrate. In the present embodiment, a silicon substrate (semiconductor substrate) is used as the base material 10s.

  In the base material 10s, a well portion 10a formed by implanting ions into a semiconductor substrate, an ion implant portion 10b formed by implanting ions of a different type from the well portion 10a into the well portion 10a, and a well portion 10a. A silicon oxide film 10c or the like as STI (Shallow Trench Isolation) is formed. The well portion 10 a functions as a channel for the transistors 121 and 124 in the light emitting pixel 20. The ion implantation part 10b functions as a part of the source / drain and wiring of the transistors 121 and 124.

  A transistor 121 and a transistor 124 are formed in a region where the well portion 10a and the ion implantation portion 10b are formed. The transistors 121 and 124 are isolated from each other by the silicon oxide film 10c.

  An insulating film 10d is provided so as to cover the surface of the substrate 10s. The insulating film 10d functions as a gate insulating film of the transistors 121 and 124. A gate electrode 22g made of a conductive film such as polysilicon is provided on the insulating film 10d. The gate electrode 22g is disposed so as to face the well portion 10a functioning as a channel of the transistors 121 and 124.

  A first interlayer insulating film 15 is formed so as to cover the gate electrode 22g. In the first interlayer insulating film 15, for example, contact holes reaching the gate, source and drain of the transistor 121 and contact holes reaching the source and drain of the transistor 124 are formed. These contact holes are filled with a conductive material.

  A first wiring layer 15-1 is formed on the first interlayer insulating film 15. The first wiring layer 15-1 is electrically connected to the relay electrode electrically connected to the gate of the transistor 121, the relay electrode electrically connected to the source and drain of the transistor 121, and the source of the transistor 124. A relay electrode, a relay electrode 15-1a electrically connected to the drain of the transistor 124, and the like are formed. In addition, the drain of the transistor 121 and the source of the transistor 124 are electrically connected by the relay electrode formed by the first wiring layer 15-1.

  A second interlayer insulating film 16 is formed so as to cover the first wiring layer 15-1. In the second interlayer insulating film 16, a contact hole reaching the relay electrode 15-1a is formed. This contact hole is filled with a conductive material.

  A second wiring layer 16-1 is formed on the second interlayer insulating film 16. One electrode 21a of the capacitor 21 and one electrode 24a of the capacitor 24 are formed by the second wiring layer 16-1. One electrode 21 a of the capacitor 21 is electrically connected to the gate of the transistor 121 through a relay electrode formed on the first interlayer insulating film 15. One electrode 24 a of the capacitor 24 is electrically connected to the drain of the transistor 124 via a relay electrode 15-1 a formed on the first interlayer insulating film 15.

  One electrode 21a of the capacitor 21 and one electrode 24a of the capacitor 24 are composed of, for example, a three-layer film of titanium, aluminum, and titanium, and have excellent light shielding properties.

An insulating film 17 is formed so as to cover the second wiring layer 16-1. The insulating film 17 is made of, for example, silicon nitride and has a thickness of approximately 30 to 60 nm. The insulating film 17 becomes a capacitive insulating film for forming the capacitor 21 and the capacitor 24.
The insulating film 17 is an example of the “capacitive insulating film” in the present invention.

  A third wiring layer 17-1 is formed on the insulating film 17. The third wiring layer 17-1 forms the other electrode 21 b of the capacitor 21 and the other electrode 24 b of the capacitor 24. As a result, the capacitor 21 is formed by the one electrode 21a, the insulating film 17, and the other electrode 21b. One electrode 24a, the insulating film 17, and the other electrode 24b form a capacitor 24.

The other electrode 24b of the capacitor 24 has an opening 24bCT. The opening 24bCT is formed so as to overlap the opening 6CT of the power supply line 6 in plan view. The other electrode 21b of the capacitor 21 and the other electrode 24b of the capacitor 24 are composed of, for example, a three-layer film of titanium, aluminum, and titanium, and have excellent light shielding properties.
The opening 24bCT is an example of the “second opening” in the present invention.

A third interlayer insulating film 18 is formed so as to cover the third wiring layer 17-1. The third interlayer insulating film 18 is made of, for example, silicon oxide. In the third interlayer insulating film 18, a contact hole reaching the other electrode 21b of the capacitor 21, a contact hole 18CT1 reaching the other electrode 24b of the capacitor 24, and the like are formed.
Further, a contact hole 18CT2 reaching one electrode 24a of the capacitor 24 is formed in the third interlayer insulating film 18. Specifically, the contact hole 18CT2 is disposed inside the opening 24bCT and the opening 6CT, and is formed so as to penetrate the third interlayer insulating film 18 and the insulating film 17 to reach one electrode 24a of the capacitor 24.
The third interlayer insulating film 18 is an example of the “first insulating film” in the present invention. The contact hole 18CT1 is an example of the “second contact hole” in the present invention. The contact hole 18CT2 is an example of the “first contact hole that penetrates through the first insulating film in the portion exposed at the first opening and reaches the first capacitor electrode” in the present invention.

A fourth wiring layer 18-1 is formed on the third interlayer insulating film 18. The fourth wiring layer 18-1 is made of a light-reflective conductive material, such as aluminum or an aluminum alloy. The power line 6 and the relay electrode 6-1 are formed by the fourth wiring layer 18-1. The power supply line 6 and the relay electrode 6-1 have light reflectivity and light shielding properties.
As described above, the region between the opening 6CT and the relay electrode 6-1 is a transmission region that transmits light. For example, light (stray light L (see FIG. 7)) emitted from the light emitting functional layer 32 passes through a region between the opening 6CT and the relay electrode 6-1, and is transmitted through the transistors 121, 122, 123, 124, and 125. Incident to the side.
Hereinafter, a region between the opening 6CT and the relay electrode 6-1 is referred to as a light transmission region.

  The power supply line 6 (opening 6CT) and the relay electrode 6-1 are formed through the same process, that is, a film forming process, a photolithography process, an etching process, and the like. In order to suppress the incidence of light to the transistors 121, 122, 123, 124, and 125, it is preferable that the distance between the opening 6CT and the relay electrode 6-1 is small. In the present embodiment, in consideration of processing accuracy (for example, 0.1 to 0.2 μm) such as a film forming process, a photolithography process, and an etching process, an interval between the opening 6CT and the relay electrode 6-1 is roughly set. It is set to 0.2 to 0.3 μm.

  The opening 6CT of the power supply line 6 is formed to overlap the opening 24bCT of the other electrode 24b of the capacitor 24 in a plan view. The relay electrode 6-1 is formed wider than the contact hole 18CT2 in plan view.

  The contact hole 18CT2 penetrates the portion of the third interlayer insulating film 18 exposed at the opening 6CT of the power supply line 6 and the portion of the insulating film 17 exposed at the opening 24bCT of the other electrode 24b of the capacitor 24. It is formed to reach the electrode 24a. That is, the contact hole 18CT2 is disposed inside the opening 6CT and the opening 24bCT. On the other hand, the contact hole 18CT1 is formed so as to penetrate the portion of the third interlayer insulating film 18 covered with the power supply line 6 and reach the other electrode 24b of the capacitor 24.

  The contact hole 18CT1 and the contact hole 18CT2 are filled with a conductive material. The contact hole reaching the other electrode 21b of the capacitor 21 of the third interlayer insulating film 18 is also filled with a conductive material.

  As a result, the relay electrode 6-1 is electrically connected to one electrode 24a of the capacitor 24 through a conductive material filled in the contact hole 18CT2. The power supply line 6 is electrically connected to the other electrode 24b of the capacitor 24 through a conductive material filled in the contact hole 18CT1. Further, the power supply line 6 is electrically connected to the other electrode 21b of the capacitor 21 through a conductive material filled in the contact hole.

  The first insulating film 1 is formed so as to cover the fourth wiring layer 18-1. The first insulating film 1 is made of, for example, silicon nitride. The first insulating film 1 covers the power supply line 6 and is formed over substantially the entire display area E. A contact hole 1CT reaching the relay electrode 6-1 is formed in the first insulating film 1.

A relay electrode 7 is formed on the first insulating film 1. The relay electrode 7 is formed wider than the opening 6CT so as to cover the opening 6CT in plan view. The relay electrode 7 is also filled inside the contact hole 1CT and is electrically connected to the relay electrode 6-1.
The relay electrode 7 is made of, for example, titanium nitride. Titanium nitride is excellent in workability, but has insufficient light shielding properties, and it is difficult to completely block light.

  A second insulating film 2 is formed so as to cover the relay electrode 7. The second insulating film 2 is made of, for example, silicon oxide. A contact hole reaching the relay electrode 7 is formed in the second insulating film 2.

  A pixel electrode 31 is formed on the second insulating film 2. The pixel electrode 31 is also filled inside the contact hole reaching the relay electrode 7 of the second insulating film 2 and is electrically connected to the relay electrode 7. That is, the pixel electrode 31 is electrically connected to the drain of the transistor 124 through the relay electrode 7, the relay electrode 6-1, the one electrode 24a of the capacitor 24, the relay electrode 15-1a, and the like.

  An insulating film 29 is formed so as to cover the pixel electrode 31. The insulating film 29 has an opening 29CT that exposes a part of the pixel electrode 31. As described above, the opening 29CT is a light emitting region of the light emitting pixel 20.

  In the light emitting region (opening 29CT), the first insulating film 1 and the second insulating film 2 are sequentially stacked in the Z direction between the power supply line 6 and the pixel electrode 31. The first insulating film 1 and the second insulating film 2 form an optical distance adjustment layer 28G in the light emitting pixel 20G.

  The optical distance adjustment layer 28 </ b> B of the light emitting pixel 20 </ b> B that emits blue (B) light is configured by the first insulating film 1. The optical distance adjustment layer 28R of the light emitting pixel 20R that emits red (R) light includes the first insulating film 1, the second insulating film 2, and the third insulating film (not shown). As a result, the film thickness of the optical distance adjustment layer 28 increases in the order of the optical distance adjustment layer 28B of the light emitting pixel 20B, the optical distance adjustment layer 28G of the light emission pixel 20G, and the optical distance adjustment layer 28R of the light emission pixel 20R. It has become.

  The organic EL element 30 includes a pixel electrode 31, a light emitting functional layer 32, and a counter electrode 33, which are sequentially stacked in the light emitting region (opening 29CT).

  The light emitting functional layer 32 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and the like, which are sequentially stacked from the pixel electrode 31 side. The organic light emitting layer emits light having red, green, and blue light components. The organic light emitting layer may be composed of a single layer or a plurality of layers (for example, a blue light emitting layer that emits blue light and a yellow light emitting layer that emits light including red and green).

  The counter electrode 33 is a cathode for supplying electrons to the light emitting functional layer 32. The counter electrode 33 is made of, for example, an alloy of Mg and Ag and has light transmittance and light reflectivity.

  A sealing layer 40 is disposed on the counter electrode 33. The sealing layer 40 is a passivation film that suppresses deterioration of the light emitting functional layer 32 and the counter electrode 33 due to moisture, oxygen, and the like, and suppresses intrusion of water and oxygen into the light emitting functional layer 32 and the counter electrode 33.

  The sealing layer 40 includes a first sealing layer 41, a planarization layer 42, and a second sealing layer 43 that are sequentially stacked from the counter electrode 33 side, covers the organic EL element 30, and covers the element substrate. 10 are provided on substantially the entire surface. The sealing layer 40 is provided with an opening (not shown) for exposing the external connection terminal 103 (see FIG. 1).

  The first sealing layer 41 and the second sealing layer 43 are made of silicon oxynitride formed using, for example, a known technique such as plasma CVD (Chemical Vapor Deposition), and have a high barrier against moisture and oxygen. It has sex.

  The planarization layer 42 is made of, for example, an epoxy resin or a coating-type inorganic material (silicon oxide or the like) that is excellent in thermal stability. The planarization layer 42 covers defects (pinholes, cracks), foreign matters, and the like of the first sealing layer 41 to form a flat surface.

  On the sealing layer 40, a green colored layer 50G is formed. The light emitting pixel 20B is formed with a blue colored layer, and the light emitting pixel 20R is formed with a red colored layer. A color filter 50 is formed by the green colored layer 50G, the blue colored layer, and the red colored layer.

  As described above, in the organic EL device 100, the transistors 121, 122, 123, 124, and 125, the capacitors 21 and 24, and the organic EL element 30 are sequentially stacked in the Z (+) direction. In the capacitor 24, one electrode 24a, the insulating film 17, and the other electrode 24b are sequentially stacked in the Z (+) direction. In the organic EL element 30, the pixel electrode 31, the light emitting functional layer 32, and the counter electrode 33 are sequentially stacked in the Z (+) direction.

  Further, a third interlayer insulating film 18 and a power supply line 6 that cover the other electrode 24 b of the capacitor 24 are stacked between the capacitor 24 and the organic EL element 30, and the power supply line 6 is connected to the third interlayer insulating film 18. The opening 6CT is exposed. The contact hole 18CT2 that penetrates through the third interlayer insulating film 18 and the insulating film 17 in the portion exposed through the opening 6CT to one electrode 24a and the third interlayer insulating film 18 in the portion covered with the power line 6 A contact hole 18CT1 reaching the electrode 24b is formed. One electrode 24a of the capacitor 24 and the pixel electrode 31 are electrically connected via a conductive material filled in the contact hole 18CT2 and the relay electrode 61. The other electrode 24b of the capacitor 24 and the power supply line 6 are electrically connected via a conductive material filled in the contact hole 18CT1.

"Optical resonance structure"
In the light emitting region (opening 29CT), the power supply line 6 as the light reflecting layer, the optical distance adjusting layer 28, the pixel electrode 31, the light emitting functional layer 32, and the counter electrode 33 having light reflectivity and light transmittance. Are sequentially stacked along the Z (+) direction. With this configuration, light emitted from the light emitting functional layer 32 is reciprocated (reflected) between the power supply line 6 and the counter electrode 33, and light of a specific wavelength is resonated (amplified). Light of a specific wavelength is emitted from the sealing substrate 70 as display light in the Z (+) direction. Thus, the organic EL device 100 has an optical resonance structure that selectively amplifies light of a specific wavelength.

  In the light emitting pixel 20B, the film thickness of the optical distance adjustment layer 28B is set so that the resonance wavelength (peak wavelength at which the luminance becomes maximum) is 470 nm. In the light emitting pixel 20G, the film thickness of the optical distance adjustment layer 28G is set so that the resonance wavelength is 540 nm. In the light emitting pixel 20R, the film thickness of the optical distance adjustment layer 28R is set so that the resonance wavelength is 610 nm.

  As a result, red (R) light having a peak wavelength of 610 nm is emitted from the light emitting pixel 20R, green (G) light having a peak wavelength of 540 nm is emitted from the light emitting pixel 20G, and peak is 470 nm from the light emitting pixel 20B. Blue (B) light having a wavelength is emitted. As described above, the organic EL device 100 according to the present embodiment has an optical resonance structure and increases the color purity of light emitted from the light emitting pixels 20.

"Pixel contact area"
FIG. 7 is an enlarged view of a region B surrounded by a broken line in FIG. That is, FIG. 7 is a schematic cross-sectional view of a region where the pixel electrode 31, the relay electrode 7, the relay electrode 6-1 and one electrode 24a of the capacitor 24 are electrically connected, that is, a pixel contact region. The broken line arrow in the figure schematically shows the state of the stray light L that has passed through the relay electrode 7.
In FIG. 7, the shaded area is a light shielding area. A portion where the round dot is shaded is an area where the light shielding property is insufficient. A portion not shaded (a portion with a white background) is a transmission region that transmits light.

FIG. 8 is a schematic plan view of the pixel contact region viewed from the Z (+) direction. FIG. 8 shows the outlines of the contact hole 18CT1, the contact hole 18CT2, and the relay electrode 6-1, and the outlines of the opening 24bCT and the opening 6CT, and other components are not shown.
In FIG. 8, the region where the contact hole 18CT1 and the contact hole 18CT2 are formed is shaded. The outline of the relay electrode 6-1 is indicated by a solid line, and the outlines of the opening 24bCT and the opening 6CT are indicated by a broken line.
Hereinafter, the state of the pixel contact region will be described with reference to FIGS.

  As shown in FIG. 7, one electrode 24 a and the other electrode 24 b of the capacitor 24, the first conductive material 4, the second conductive material 5, the power supply line 6, and the relay electrode 6-1 are Since the light-shielding property is excellent, the region provided with these components is a light-shielding region. Since the relay electrode 7 is made of titanium nitride and has poor light shielding properties, the region where the relay electrode 7 is formed transmits part of the light. Since the insulating film 17, the third interlayer insulating film 18, the first insulating film 1, the second insulating film 2, the pixel electrode 31, and the insulating film 29 are made of a translucent material, these configurations are used. The region in which the element is provided becomes a transmission region that transmits light.

  The contact hole 18CT2 is filled with the first conductive material 4. The first conductive material 4 includes a barrier metal 4b disposed on the third interlayer insulating film 18 side and tungsten 4a disposed on the opposite side of the barrier metal 4b from the third interlayer insulating film 18. The contact hole 18CT1 is filled with the second conductive material 5. The second conductive material 5 includes a barrier metal 5b disposed on the third interlayer insulating film 18 side and tungsten 5a disposed on the opposite side of the barrier metal 5b from the third interlayer insulating film 18.

  The first conductive material 4 and the second conductive material 5 are formed in the same process. The barrier metal 4b and the barrier metal 5b contain titanium nitride. For example, the barrier metal 4b and the barrier metal 5b are composed of titanium nitride or a two-layer film in which titanium and titanium nitride are stacked.

  Tungsten 4a, 5a is preferable as a conductive material filled inside the contact hole 18CT1 or the contact hole 18CT2 because it has excellent light shielding properties and workability (easiness of film formation and etching).

Titanium nitride is excellent in processability (ease of film formation and etching) and adhesion. Furthermore, since titanium nitride has the property of absorbing light, the reflection of light can be reduced by covering the surfaces of the tungsten 4a and 5a with titanium nitride. Therefore, it is preferable to dispose the barrier metals 4b and 5b containing titanium nitride between the tungsten 4a and 5a and the third interlayer insulating film 18 (surfaces of the tungsten 4a and 5a).
The region where the contact hole 18CT2 filled with the first conductive material 4 and the region where the contact hole 18CT1 filled with the second conductive material 5 are formed are light-shielding regions, and the reflection of light is also reduced. Has been.

As shown in FIG. 8, when viewed from the Z (+) direction, the outlines of the openings 24bCT and 6CT, the outline of the relay electrode 6-1, the outline of the contact hole 18CT1, and the outline of the contact hole 18CT2 are square.
Note that these contours are not limited to squares, but may be rectangles, circles, ellipses, or shapes having straight lines and curves.

The contact hole 18CT2 is disposed inside the opening 24bCT and the opening 6CT. Here, the length of one side of the contact hole 18CT2 is D1, and the distance between the openings 24bCT and 6CT and the contact hole 18CT2 is D12. The length of one side of the opening 6CT is D2. Hereinafter, the length D2 of one side of the opening 6CT is referred to as an opening dimension D2.
The contact hole 18CT1 is disposed so as to surround the contact hole 18CT2 and the openings 24bCT and 6CT.

  As described above, the region between the opening 6CT of the power supply line 6 (the contour of the opening 6CT) and the relay electrode 6-1 (the contour of the relay electrode 6-1) is a light transmission region. The dimension of the light transmission region (the interval between the opening 6CT and the relay electrode 6-1) is W1. As described above, the dimension W1 of the light transmission region is approximately 0.2 to 0.3 μm in consideration of processing accuracy (for example, approximately 0.1 to 0.2 μm).

  As shown in FIG. 7, part of the stray light L passes through the relay electrode 7 and travels toward the transmission region between the opening 6CT and the relay electrode 6-1. Furthermore, although illustration is omitted, a part of the stray light L passes through the first insulating film 1 and is reflected between the power supply line 6 and the relay electrode 7, and is formed between the opening 6CT and the relay electrode 6-1. Go to the side of the transmissive area in between. A part of the stray light L passes through the transmission region between the opening 6CT and the relay electrode 6-1, and travels toward the transistors 121, 122, 123, 124, and 125.

  For example, in the black light emitting pixel 20, a part of the light emitted from the adjacent light emitting pixels 20 becomes stray light L, which affects the black light emitting pixel 20. That is, not only the light emitted from one of the plurality of light emitting pixels 20 but also the light emitted from the other light emitting pixels 20 becomes stray light L that affects the one light emitting pixel 20.

  Light that passes through the light transmission region and travels in the Z (−) direction is shielded by one electrode 24a and the other electrode 24b of the capacitor 24, and travels toward the transistors 121, 122, 123, 124, and 125. It becomes difficult.

  The light that passes through the light transmission region and travels in the direction intersecting the Z (−) direction is shielded by the contact hole 18CT1 filled with the second conductive material 5, and the transistors 121, 122, 123, 124, and 125 are blocked. It becomes difficult to advance to the side.

  That is, the second conductive material 5 is provided so that one electrode 24a and the other electrode 24b of the capacitor 24 having excellent light shielding properties are provided in the Z (−) direction with respect to the light transmission region and surround the light transmission region. By providing the contact hole 18CT1 (light-shielding region) filled with, stray light L can be made difficult to travel to the transistors 121, 122, 123, 124, and 125 side. Therefore, an increase in leakage current (light leakage current) of the transistors 121, 122, 123, 124, and 125 due to stray light L can be reduced.

  As described above, in the organic EL device 100 according to the present embodiment, since the capacitor 24 is formed in the pixel circuit 110, the pixel even if the leakage current of the transistors 121, 122, 123, 124, 125 increases. The change in the potential V1 of the electrode 31 becomes small, and for example, it is possible to obtain an effect of suppressing deterioration in image quality that the light emitting pixel 20 that should originally display black light emits light.

  Furthermore, in the organic EL device 100 according to the present embodiment, the light-shielding portion such as the one electrode 24a of the capacitor 24, the other electrode 24b, the contact hole 18CT1 filled with the second conductive material 5 is provided in the light transmission region. By providing it around, the stray light L is less likely to travel toward the transistors 121, 122, 123, 124, and 125, and the leakage current (light leakage current) of the transistors 121, 122, 123, 124, and 125 due to the stray light L is reduced. The effect that it can be done can be obtained.

  Therefore, in the organic EL device 100 according to this embodiment, image quality deterioration due to an increase in leakage current (change in characteristics) of the transistors 121, 122, 123, 124, and 125 is suppressed, and a high-quality display can be provided. it can.

(Embodiment 2)
"Outline of organic EL device"
FIG. 9 corresponds to FIG. 7 and is a schematic cross-sectional view of the pixel contact region of the organic EL device according to the second embodiment. FIG. 10 corresponds to FIG. 8 and is a schematic plan view of the pixel contact region. FIG. 11 is a process flow showing a method for manufacturing a pixel contact region. 12 and 13 correspond to FIG. 7 and are schematic cross-sectional views showing the state of the pixel contact region after the respective steps shown in FIG.

In the present embodiment, the light transmission region is smaller than that in the first embodiment. This is the main difference between the present embodiment and the first embodiment. Furthermore, this embodiment has a manufacturing method capable of forming a light transmission region smaller than that of the first embodiment.
Hereinafter, an overview of the organic EL device 200 and the method for manufacturing the organic EL device 200 according to the present embodiment will be described with a focus on differences from the first embodiment with reference to FIGS. 9 to 13. In addition, about the component same as Embodiment 1, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted.

  As shown in FIG. 9, the third interlayer insulating film 18 is formed with a contact hole 18CT1 that penetrates the third interlayer insulating film 18 and reaches the other electrode 24b of the capacitor 24. The contact hole 18CT1 is filled with the second conductive material 5.

On the third interlayer insulating film 18, the power supply line 6 is formed by the fourth wiring layer 18-1. The power supply line 6 is covered with the first insulating film 1, and an opening 6 CTa that penetrates the first insulating film 1 and the power supply line 6 and exposes the third interlayer insulating film 18 is formed for each light emitting pixel 20.
The first insulating film 1 is an example of the “second insulating film” in the present invention. The difference from the first embodiment is that an opening 6CTa penetrating the first insulating film 1 and the power supply line 6 is formed and a relay electrode is not formed inside the opening 6CTa.

The third interlayer insulating film 18 exposed through the opening 6CTa is covered with the sidewall insulating film 3.
The sidewall insulating film 3 is an example of the “third insulating film” in the present invention. The side wall insulating film 3 is also different from the first embodiment.

In the portion exposed through the opening 6CTa, a contact hole 18CT2a that penetrates the sidewall insulating film 3, the third interlayer insulating film 18, and the insulating film 17 and reaches one electrode 24a of the capacitor 24 is formed.
The contact hole 18CT2a is an example of the “first contact hole that penetrates through the third insulating film and the first insulating film exposed at the first opening to the first capacitor electrode” in the present invention. It is. The difference from the first embodiment is that a contact hole 18CT2a penetrating the sidewall insulating film 3, the third interlayer insulating film 18, and the insulating film 17 is formed.

A relay electrode 7 is formed so as to cover the contact hole 18CT2a and the opening 6CTa. The relay electrode 7 according to the present embodiment is also filled inside the contact hole 18CT2a, which is also different from the first embodiment.
The relay electrode 7 is an example of the “second conductive material” in the present invention.

  The relay electrode 7 is composed of a barrier metal 7b and tungsten 7a. The barrier metal 7b is made of titanium nitride, and is disposed inside the contact hole 18CT2a (on the side of the third insulating film) and on the surfaces of the first insulating film 1 and the sidewall insulating film 3. That is, the barrier metal 7b is formed wider than the opening 6CTa in plan view.

  A recess that reflects the shape of the contact hole 18CT2a is formed in the barrier metal 7b. Tungsten 7a is filled in the recess.

The portion of the relay electrode 7 filled with the tungsten 7a has excellent light shielding properties. The portion of the relay electrode 7 (barrier metal 7 b) that is not filled with the tungsten 7 a is inferior in light-shielding property and transmits part of the stray light L emitted from the light emitting functional layer 32 of the organic EL element 30.
Therefore, the region where the contact hole 18CT2a is formed becomes a light shielding region. A region between the opening 6CTa and the contact hole 18CT2a becomes a transmission region through which light is transmitted. That is, the region between the opening 6CTa and the contact hole 18CT2a in the present embodiment corresponds to the region between the opening 6CT and the relay electrode 6-1 in the first embodiment, and becomes a transmission region through which the stray light L is transmitted.
Hereinafter, a region between the opening 6CTa and the contact hole 18CT2a is referred to as a light transmission region.
Note that the sidewall insulating film 3 is disposed between the opening 6CT and the relay electrode 6-1.

  A second insulating film 2 is formed so as to cover the relay electrode 7. A contact hole reaching the relay electrode 7 is formed in the second insulating film 2. A pixel electrode 31 is formed on the second insulating film 2. The pixel electrode 31 is also filled inside the contact hole reaching the relay electrode 7 and is electrically connected to the relay electrode 7. That is, the pixel electrode 31 is electrically connected to the drain of the transistor 124 via the relay electrode 7, the one electrode 24a of the capacitor 24, the relay electrode 15-1a, and the like.

  As described above, in the organic EL device 200, the transistors 121, 122, 123, 124, and 125, the capacitors 21 and 24, and the organic EL element 30 are sequentially stacked in the Z (+) direction. In the capacitor 24, one electrode 24a, the insulating film 17, and the other electrode 24b are sequentially stacked in the Z (+) direction. In the organic EL element 30, the pixel electrode 31, the light emitting functional layer 32, and the counter electrode 33 are sequentially stacked in the Z (+) direction.

  Between the capacitor 24 and the organic EL element 30, the third interlayer insulating film 18, the power supply line 6, and the first insulating film 1 covering the other electrode 24b of the capacitor 24 are laminated in order. An opening 6CTa that penetrates the first insulating film 1 and the power supply line 6 and exposes the third interlayer insulating film 18 is formed, and the third interlayer insulating film 18 exposed through the opening 6CTa is covered with the sidewall insulating film 3.

  A contact hole 18CT2a that penetrates through the sidewall insulating film 3, the third interlayer insulating film 18 exposed through the opening 6CTa, and the insulating film 17 and reaches one electrode 24a of the capacitor 24 is formed. A contact hole 18CT1 that penetrates through the third interlayer insulating film 18 covered with the power line 6 and reaches the other electrode 24b of the capacitor 24 is formed.

  One electrode 24a of the capacitor 24 and the pixel electrode 31 are electrically connected via the relay electrode 7 filled in the contact hole 18CT2a. The other electrode 24b of the capacitor 24 and the power supply line 6 are electrically connected via the second conductive material 5 filled in the contact hole 18CT1.

As shown in FIG. 10, the contact hole 18CT2a is arranged inside the opening 6CTa. Here, the length of one side of the contact hole 18CT2a is D1, which is the same length as the contact hole 18CT2 of the first embodiment. The dimension of the light transmission region (the distance between the opening 6CTa and the contact hole 18CT2a) is D13. The opening size of the opening 6CTa is D3.
The contact hole 18CT1 is disposed so as to surround the contact hole 18CT2a and the opening 24bCT.

Although details will be described later, the opening dimension D3 of the opening 6CTa is smaller than the opening dimension D2 of the first embodiment. Further, the dimension D13 of the light transmission region is smaller than the dimension W1 of the light transmission region of the first embodiment.
This embodiment has a manufacturing method that can stably form a light transmission region having a small dimension D13 as compared with the light transmission region dimension W1 of the first embodiment. Next, an outline of the manufacturing method according to the present embodiment will be described.

"Outline of manufacturing method"
As shown in FIG. 11, the step of forming the pixel contact region includes the step of forming the power supply line 6 and the first insulating film 1 (step S1), the step of forming the opening 6CTa (step S2), and the sidewall insulating film. 3 (step S3), a contact hole 18CT2a formation step (step S4), a barrier metal 7b formation step (step S5), and a tungsten 7a filling step (step S6). Contains.

In step S1, as shown in FIG. 12A, aluminum having a thickness of about 100 nm is deposited on the third interlayer insulating film 18 made of silicon oxide by using, for example, a sputtering method, and the power source line 6 Form. Next, approximately 200 nm of silicon nitride is deposited using, for example, a plasma CVD method, and the first insulating film 1 is formed. That is, in step S1, the power supply line 6 whose dimension (film thickness) in the Z (−) direction is approximately 100 nm and the first insulating film 1 whose dimension in the Z (−) direction of the first insulating film 1 is approximately 200 nm. And form.
In the third interlayer insulating film 18, a contact hole 18CT1 previously filled with the second conductive material 5 is formed.
The Z (−) direction is an example of the “second direction” in the present invention.

  In step S2, as shown in FIG. 12 (b), the first insulating film 1 and the power supply line 6 are filled with Z () by a dry etching method using a capacitively coupled dry etching apparatus such as an RIE (Reactive Ionic Etching) apparatus. An anisotropic etching in the-) direction is performed to form an opening 6CTa surrounded by a wall surface along the Z (-) direction. Specifically, after the first insulating film 1 (silicon nitride) is etched in the Z (−) direction by a dry etching method using a fluorine-based gas, the power line 6 (aluminum) is connected by a dry etching method using a chlorine-based gas. Etching in the Z (−) direction is performed to form an opening 6CTa that penetrates the first insulating film 1 and the power supply line 6 and exposes the third interlayer insulating film 18.

  The dimension (opening dimension) in the direction intersecting the Z (−) direction of the opening 6CTa is D3. In step S2, an opening 6CTa having an opening dimension D3 smaller than the opening dimension D2 of the opening 6CT of the first embodiment is formed so as to penetrate the first insulating film 1 and the power supply line 6 in the Z (−) direction. The depth (length in the Z (−) direction) H of the opening 6CTa is a dimension (approximately 300 nm) obtained by adding the film thickness (approximately 100 nm) of the power supply line 6 and the film thickness (approximately 200 nm) of the first insulating film 1. become.

  In step S3, as shown in FIG. 12C, the sidewall insulating film 3 is formed by depositing silicon nitride having a thickness of approximately 100 nm by using, for example, a plasma CVD method.

The sidewall insulating film 3 includes a first portion 3-1 that covers the surface of the third interlayer insulating film 18, a second portion 3-2 that covers the wall surface of the opening 6 CTa, and a first portion that covers the surface of the first insulating film 1. 3 part 3-3. Since silicon nitride using the plasma CVD method has excellent step coverage, the dimension in the Z (−) direction of the sidewall insulating film 3 of the first portion 3-1, the sidewall insulating film of the second portion 3-2. 3 in the direction crossing the Z (−) direction, and the dimension in the Z (−) direction of the sidewall insulating film 3 of the third portion 3-3 is D13, which is approximately 100 nm.
The dimension D13 can be adjusted according to the film formation conditions of the silicon nitride formed in step S3.

Further, the dimension in the Z (−) direction of the sidewall insulating film 3 of the second portion 3-2 is a length (approximately 400 nm) obtained by adding the dimension D13 (approximately 100 nm) and the depth H (approximately 300 nm). . That is, in the sidewall insulating film 3 of the second portion 3-2, the dimension in the Z (−) direction (approximately 400 nm) is different from the dimension in the direction intersecting with the Z (−) direction (approximately 100 nm).
In this way, in step S3, the first portion 3-1 whose dimension in the Z (−) direction is approximately 100 nm and the dimension whose dimension in the Z (−) direction is approximately 400 nm and intersects the Z (−) direction. And a second portion 3-2 having a size of approximately 100 nm (D13).

  In step S4, as shown in FIG. 13A, for example, the sidewall insulating film 3 and the third interlayer insulating film 18 are formed by dry etching using a capacitively coupled dry etching apparatus such as an RIE apparatus and a fluorine-based gas. The insulating film 17 is subjected to anisotropic etching in the Z (−) direction to form a contact hole 18CT2a.

  The sidewall insulating film 3 and the insulating film 17 are made of silicon nitride, and the third interlayer insulating film 18 is made of silicon oxide. In dry etching (anisotropic etching) using fluorine gas, for example, if the etching rate of silicon nitride is 1, the etching rate of silicon oxide is 10 or more, and high etching selectivity is realized. That is, in the anisotropic etching in the Z (−) direction, the third interlayer insulating film 18 can be etched faster than the sidewall insulating film 3 and the insulating film 17.

  First, anisotropic etching in the first Z (−) direction is performed on the sidewall insulating film 3 (approximately 100 nm of silicon nitride). In the first portion 3-1, the sidewall insulating film 3 is removed and the third interlayer insulating film 18 is exposed. That is, using the sidewall insulating film 3 (silicon nitride) of the second portion 3-2 as an etching mask, a contact hole that penetrates the sidewall insulating film 3 of the first portion 3-1 and exposes the third interlayer insulating film 18 is formed. To do. In the second portion 3-2, the sidewall insulating film 3 is etched approximately 100 nm in the Z (−) direction, so the dimension of the sidewall insulating film 3 in the Z (−) direction changes from approximately 400 nm to approximately 300 nm (decreases). To do).

  Next, the second Z (−) direction anisotropic etching is performed on the third interlayer insulating film 18 (silicon oxide). As described above, since the etching rate of the third interlayer insulating film 18 (silicon oxide) is larger than the etching rate of the sidewall insulating film 3 (silicon nitride), the third interlayer insulating film 18 (silicon oxide) is substantially increased. Are selectively etched, and the insulating film 17 is exposed. That is, using the sidewall insulating film 3 (silicon nitride) of the second portion 3-2 as an etching mask, a contact hole that penetrates the third interlayer insulating film 18 of the first portion 3-1 and exposes the insulating film 17 is formed. .

  Next, anisotropic etching in the third Z (−) direction is performed on the insulating film 17. That is, in the third anisotropic etching in the Z (−) direction, the side wall insulating film 3 (silicon nitride) of the second portion 3-2 is used as an etching mask to penetrate the insulating film 17 and one electrode 24a of the capacitor 24. A contact hole that exposes is formed. Since the film thickness (dimension in the Z (−) direction) of the insulating film 17 is approximately 30 to 60 nm, the sidewall insulating film 3 (silicon nitride) of the second portion 3-2 is approximately 30 in the Z (−) direction. Etched by ~ 60 nm. That is, the sidewall insulating film 3 (silicon nitride) of the second portion 3-2 is approximately 240 to 270 nm.

  The anisotropic etching in the first Z (−) direction, the anisotropic etching in the second Z (−) direction, and the anisotropic etching in the third Z (−) direction are continuously performed under the same conditions. Has been processed. That is, the wall surface of the opening 6CTa is obtained by anisotropic etching in the first Z (−) direction, anisotropic etching in the second Z (−) direction, and anisotropic etching in the third Z (−) direction. A contact hole 18CT2a penetrating the sidewall insulating film 3, the third interlayer insulating film 18 and the insulating film 17 and reaching one electrode 24a of the capacitor 24 is formed inside the sidewall insulating film 3 of the second portion 3-2 covering the first portion 3-2. Form. The opening size of the contact hole 18CT2a is D1.

  A sidewall insulating film 3 is disposed between the opening 6CTa and the contact hole 18CT2a. In the first Z (−) direction anisotropic etching, the second Z (−) direction anisotropic etching, and the third Z (−) direction anisotropic etching, the Z (−) direction Since the etching in the intersecting direction is suppressed, the dimension in the direction intersecting the Z (−) direction of the sidewall insulating film 3 of the second portion 3-2 maintains the state of D13 (approximately 100 nm). Therefore, the dimension between the opening 6CTa and the contact hole 18CT2a is the dimension D13 (approximately 100 nm).

  In step S2 described above, the opening dimension D3 of the opening 6CTa formed in the step is adjusted to be a dimension obtained by adding a dimension (approximately 200 nm) twice the dimension D13 (approximately 100 nm) to the opening dimension D1. ing.

  Thus, in step S4, the sidewall insulating film 3 and the third interlayer insulation are formed inside the sidewall insulating film 3 of the second portion 3-2 using the sidewall insulating film 3 of the second portion 3-2 as an etching mask. A contact hole 18CT2a that penetrates the film 18 and the insulating film 17 and reaches one electrode 24a of the capacitor 24 is formed. That is, in step S4, an etching mask formed through a photolithography process is not used, but an existing pattern (side wall insulating film 3 of the second portion 3-2) is used as an etching mask to perform contact holes in a self-aligning manner. 18CT2a is formed.

  In step S5, as shown in FIG. 13B, a titanium nitride film having a thickness of about 50 nm is formed by sputtering, for example, and the surface of the first insulating film 1, the surface and wall surfaces of the side wall insulating film 3, and the contact hole 18CT2a are formed. A barrier metal 7b covering the inside is formed. At this time, a concave portion reflecting the concave shape of the contact hole 18CT2a is formed in the barrier metal 7b inside the contact hole 18CT2a.

  In step S6, as shown in FIG. 13C, a tungsten film is formed by the CVD method, and the concave portion of the barrier metal 7b is filled with tungsten. Tungsten is formed other than the concave portion of the barrier metal 7b, such as the flat portion (surface) of the b-bar metal 7b, so that unnecessary tungsten is removed by a known technique (for example, a dry etching method using a fluorine-based gas). Then, the inside of the contact hole 18CT2a is filled with tungsten 7a.

Through step S5 and step S6, the relay electrode 7 is formed. The contact hole 18CT2a is filled with the barrier metal 7b and the tungsten 7a, and the tungsten 7a has an excellent light shielding property. Therefore, the region where the contact hole 18CT2a is formed becomes a light shielding region. A space between the opening 6CTa and the contact hole 18CT2a is a light transmission region. The dimension in the direction intersecting the Z (−) direction of the light transmission region, that is, the distance between the opening 6CTa and the contact hole 18CT2a is the dimension D13 (approximately 100 nm).
In this way, a light transmission region having a dimension of D13 (approximately 100 nm) is formed between the opening 6CTa and the contact hole 18CT2a through steps S1 to S6.

  As described above, in the first embodiment, the light transmission region of the dimension W1 is formed through the film forming process, the photolithography process, and the etching process. The dimension W1 of the light transmission region is approximately 0.2 to 0.3 μm in consideration of the processing accuracy (for example, approximately 0.1 to 0.2 μm) of these steps.

  On the other hand, the dimension D13 of the light transmission region of the present embodiment is approximately 100 nm (approximately 0.1 μm) depending mainly on the film formation process (deposition of the sidewall insulating film 3 in step S3). That is, since the dimension D13 of the light transmission region of the present embodiment is mainly formed depending on the film forming process, the light transmission of the first embodiment formed through the film forming process, the photolithography process, and the etching process. It can be made smaller than the size W1 of the region.

  According to the manufacturing method of the present embodiment, a small light transmission region can be formed as compared with the light transmission region of the first embodiment. Therefore, stray light L is formed on the transistor 121, 122, 123, 124, 125 side. Is more difficult to enter, and the leakage current (light leakage current) of the transistors 121, 122, 123, 124, and 125 due to the stray light L can be further reduced.

  Furthermore, in the manufacturing method of the present embodiment, the contact hole 18CT2a is formed inside the opening 6CTa in a self-aligned manner without passing through a photolithography process, so that the influence of the alignment error is eliminated, and the contact hole is formed inside the opening 6CTa. 18CT2a can be formed stably and with high accuracy. For example, when the small opening 6CTa corresponding to the process limit is formed, the small contact hole 18CT2a can be stably and highly accurately formed inside the small opening 6CTa.

  The region where the opening 6CTa is formed is a region where a contact for electrically connecting the pixel electrode 31 and the drain of the transistor 124 is formed. That is, the contact region for electrically connecting the pixel electrode 31 and the drain of the transistor 124 can be reduced by the manufacturing method of the present embodiment. Further, the pixel electrode 31 has a light emitting region (opening 29CT of the insulating film 29) for issuing the light emitting functional layer 32 in addition to a contact region electrically connected to the drain of the transistor 124. By reducing the area, the light emitting area can be increased.

  Therefore, according to the manufacturing method of the present embodiment, the contact region that is electrically connected to the drain of the transistor 124 formed in the pixel electrode 31 is reduced, the light emitting region where the light emitting functional layer 32 emits light is increased, and the display is performed. It is also possible to obtain the effect of increasing the brightness of the screen.

(Embodiment 3)
"Electronics"
FIG. 14 is a schematic diagram of a head mounted display as an example of an electronic apparatus.
As shown in FIG. 14, the head mounted display 1000 has two display units 1001 provided corresponding to the left and right eyes. The observer M can see characters and images displayed on the display unit 1001 by wearing the head mounted display 1000 on the head like glasses. For example, if an image in consideration of parallax is displayed on the left and right display units 1001, a stereoscopic video can be viewed and enjoyed.

  One of the organic EL devices 100 and 200 according to the above embodiment is mounted on the display unit 1001. In the organic EL devices 100 and 200, the stray light L emitted from the light emitting functional layer 32 of the organic EL element 30 is difficult to enter the transistors 121, 122, 123, 124, and 125, and the transistors 121, 122, 123, 124, and 125 An increase in leakage current (light leakage current) is suppressed, and for example, the light emitting pixels 20 that should be displayed in black emit light to suppress deterioration in image quality such as a decrease in contrast and display unevenness, thereby providing a high-quality display. Therefore, by mounting any one of the organic EL devices 100 and 200 on the display unit 1001, the head mounted display 1000 with a high image quality display can be provided.

  Note that the electronic device on which the organic EL device is mounted is not limited to the head mounted display 1000. For example, it may be mounted on an electronic device having a display unit such as a head-up display, an electronic viewfinder of a digital camera, a portable information terminal, or a navigator.

The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. An electronic device in which the organic EL device is mounted is also included in the technical scope of the present invention.
Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

(Modification 1)
FIG. 15 corresponds to FIG. 8 and is a schematic plan view of a pixel contact region of an organic EL device according to Modification 2. In the figure, a contact hole 18CT1 and a contact hole 18CT2 are shown, and other components are not shown.
In the present modification, the shape of the contact hole 18CT2 is different from that of the first embodiment, and other configurations are the same as those of the first embodiment.

  As shown in FIG. 15A, the contact hole 18CT1 is not formed so as to surround the entire contact hole 18CT1, but is disposed so as to surround a part of the contact hole 18CT2. That is, a portion where the contact hole 18CT1 is not formed (a portion where the third interlayer insulating film 18 is not etched) G is formed between one end of the contact hole 18CT1 and the other end of the contact hole 18CT1. Have.

  As shown in FIG. 15B, the contact hole 18CT1 has an L shape and is disposed so as to surround a part of the contact hole 18CT2.

  Also with this configuration, stray light L (stray light L traveling toward the transistors 121, 122, 123, 124, and 125) traveling in the direction crossing the Z (−) direction can be shielded. That is, the contact hole 18CT1 may be disposed so as to surround at least a part of the contact hole 18CT2.

(Modification 2)
FIG. 16 corresponds to FIG. 8 and is a schematic plan view of a pixel contact region of an organic EL device according to Modification 3. In the figure, a contact hole 18CT1 and a contact hole 18CT2 are shown, and other components are not shown.
In the present modification, the shape of the contact hole 18CT2 is different from that of the first embodiment, and other configurations are the same as those of the first embodiment.

  As shown in FIG. 16A, the contact hole 18CT1 is composed of a first contact hole 18CT1-1 and a second contact hole 18CT1-2. Further, the first contact hole 18CT1-1 has the same shape as the contact hole 18CT1 of Modification 2 shown in FIG. The first contact hole 18CT1-1 and the second contact hole 18CT1-2 are arranged so as to surround the contact hole 18CT2.

  As shown in FIG. 16B, the contact hole 18CT1 includes a first contact hole 18CT1-1, a second contact hole 18CT1-2, a third contact hole 18CT1-3, and a fourth contact hole 18CT1-4. Consists of. The first contact hole 18CT1-1, the second contact hole 18CT1-2, the third contact hole 18CT1-3, and the fourth contact hole 18CT1-4 are arranged so as to surround the contact hole 18CT2.

  Also with this configuration, stray light L (stray light L traveling toward the transistors 121, 122, 123, 124, and 125) traveling in the direction crossing the Z (−) direction can be shielded. That is, the contact hole 18CT1 may be composed of a plurality of contact holes, and the plurality of contact holes may be arranged so as to surround at least a part of the contact hole 18CT2.

(Modification 3)
Depending on the configuration of the pixel contact region according to the first embodiment, light is incident on the transistor side from the light transmission region between the opening 6CT (the contour of the opening 6CT) and the relay electrode 6-1 (the contour of the relay electrode 6-1). Can strongly block the light to be. Therefore, the light shielding property can be improved and the light leakage current of the transistor can be suppressed.

In the manufacturing method according to the second embodiment, the contact hole 18CT2a is formed in a self-aligned manner inside the opening 6CTa without undergoing a photolithography process. The hole 18CT2a can be stably formed with high accuracy. Therefore, a smaller pixel contact can be formed as compared with the case of forming using a photolithography process.
The configuration of the pixel contact region according to the first embodiment and the manufacturing method according to the second embodiment are not limited to application to an organic EL device, and can be applied to other electro-optical devices, for example, liquid crystal devices.

  DESCRIPTION OF SYMBOLS 1 ... 1st insulating film, 2 ... 2nd insulating film, 3 ... Side wall insulating film, 4 ... 1st electrically-conductive material, 5 ... 2nd electrically-conductive material, 6 ... Power supply line, 6-1 ... Relay electrode, 6CT ... Opening, 7 ... Relay electrode, 8 ... Power supply line, 10 ... Element substrate, 10a ... Well part, 10b ... Ion implantation part, 10c ... Silicon oxide film, 10d ... Insulating film, 10s ... Base material, 12 ... Scanning line, 14 ... Data line, 15 ... first interlayer insulating film, 15-1 ... first wiring layer, 16 ... second interlayer insulating film, 16-1 ... second wiring layer, 17 ... insulating film, 17-1 third wiring layer , 18 ... third interlayer insulating film, 18CT1 ... contact hole, 18CT2 ... contact hole, 18-1 ... fourth wiring layer, 19 ... power line for initialization, 20, 20B, 20G, 20R ... light emitting pixel, 21 ... Capacitance, 21a ... one electrode, 21b ... the other electrode, 24 ... capacitance, 24a ... one Electrode, 24b ... the other electrode, 24bCT ... opening, 28, 28G ... optical distance adjustment layer, 29 ... insulating film, 29CT ... opening, 30 ... organic EL element, 31 ... pixel electrode, 32 ... light emitting functional layer, 33 ... Counter electrode 40 ... sealing layer 41 ... first sealing layer 42 ... flattening layer 43 ... second sealing layer 50 ... color filter 50G ... colored layer 71 ... resin layer 70 ... sealing Substrate, 100 ... organic EL device, 110 ... pixel circuit, 121, 122, 123, 124, 125 ... transistor.

Claims (8)

Including a transistor arranged in order in the first direction, a capacitive element, and a light emitting element,
The capacitive element includes a first capacitive electrode, a capacitive insulating film, and a second capacitive electrode that are sequentially stacked in the first direction,
The light emitting element includes a pixel electrode, a light emitting functional layer, and a counter electrode, which are sequentially stacked in the first direction,
Between the capacitive element and the light emitting element, a first insulating film covering the second capacitive electrode and a reflective layer are laminated,
The reflective layer has a first opening exposing the first insulating film;
A first contact hole penetrating through the first insulating film in a portion exposed by the first opening and reaching the first capacitor electrode; and a portion of the first insulating film covered by the reflective layer. A second contact hole penetrating to the second capacitor electrode,
The first capacitor electrode and the pixel electrode are electrically connected via a first conductive material filled in the first contact hole,
The second capacitor electrode and the reflective layer are electrically connected via a second conductive material filled in the second contact hole,
The organic electroluminescence device according to claim 1, wherein the second contact hole is disposed so as to surround at least a part of the first contact hole. Including a transistor arranged in order in the first direction, a capacitive element, and a light emitting element,
The capacitive element includes a first capacitive electrode, a capacitive insulating film, and a second capacitive electrode that are sequentially stacked in the first direction,
The light emitting element includes a pixel electrode, a light emitting functional layer, and a counter electrode, which are sequentially stacked in the first direction,
Between the capacitive element and the light emitting element, a first insulating film that covers the second capacitive electrode, a reflective layer, and a second insulating film are sequentially laminated,
A first opening that penetrates the second insulating film and the reflective layer and exposes the first insulating film;
The portion of the first insulating film exposed at the first opening is covered with a third insulating film,
A portion covered with the reflective layer and a first contact hole that penetrates the first insulating film and reaches the first capacitor electrode in the portion exposed by the first insulating film and the first opening. A second contact hole that passes through the first insulating film and reaches the second capacitor electrode,
The first capacitor electrode and the pixel electrode are electrically connected via a first conductive material filled in the first contact hole,
The second capacitor electrode and the reflective layer are electrically connected via a second conductive material filled in the second contact hole,
The organic electroluminescence device according to claim 1, wherein the second contact hole is disposed so as to surround at least a part of the first contact hole. The second capacitor electrode has a second opening exposing the capacitor insulating film,
At least a portion of the second opening overlaps the first opening in plan view;
The first contact hole is disposed inside the first opening and the second opening, and is formed so as to penetrate the first insulating film and the capacitor insulating film to reach the first capacitor electrode. The organic electroluminescence device according to claim 1, wherein the organic electroluminescence device is provided. The first conductive material and the second conductive material include a barrier metal disposed on the first insulating film side, and tungsten disposed on the opposite side of the barrier metal from the first insulating film. Consists of
The organic electroluminescence device according to claim 1, wherein the barrier metal includes titanium nitride. The first capacitor electrode and the pixel electrode are electrically connected to one of a source or a drain of the transistor,
A first potential is supplied to the second capacitor electrode and the reflective layer,
5. The organic electroluminescence device according to claim 1, wherein the counter electrode is supplied with a second potential lower than the first potential. 6.   An electronic apparatus comprising the organic electroluminescence device according to claim 1. A third insulating film, and a first capacitor electrode, a capacitor insulating film, a second capacitor electrode, a first insulating film, a reflective layer, and a second insulating film, which are sequentially stacked in the first direction. Including
A first contact hole penetrating the third insulating film and the first insulating film and reaching the first capacitor electrode; and a first conductive material filled in the first contact hole. A method for manufacturing an electroluminescent device, comprising:
Depositing the reflective layer and the second insulating film on the first insulating film;
The second insulating film and the reflective layer are subjected to anisotropic etching in a second direction from the second insulating film toward the first capacitor electrode, and a wall surface along the second direction is formed. Forming a first opening surrounded by and exposing the first insulating film;
Forming a third insulating film having a portion covering the wall surface, and a portion disposed inside the portion covering the wall surface and covering the surface of the first insulating film;
The anisotropic etching in the second direction is performed on the third insulating film and the first insulating film, and the portion of the portion covering the surface of the first insulating film is inside the portion covering the wall surface. Forming a first contact hole penetrating through the insulating film 3 and the first insulating film to reach the first capacitor electrode;
Filling the first contact hole with the first conductive material;
The manufacturing method of the organic electroluminescent apparatus characterized by having. The first insulating film is silicon oxide;
8. The method of manufacturing an organic electroluminescence device according to claim 7, wherein the third insulating film is silicon nitride.

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