JP2015131361A - 研磨装置および研磨方法 - Google Patents
研磨装置および研磨方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 9
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- 238000001816 cooling Methods 0.000 claims abstract description 25
- 239000007921 spray Substances 0.000 claims abstract description 15
- 238000002347 injection Methods 0.000 claims description 38
- 239000007924 injection Substances 0.000 claims description 38
- 238000009834 vaporization Methods 0.000 claims description 16
- 230000008016 vaporization Effects 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 9
- 238000011084 recovery Methods 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 23
- 239000002002 slurry Substances 0.000 description 14
- 239000002184 metal Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 238000005507 spraying Methods 0.000 description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
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- 150000001924 cycloalkanes Chemical class 0.000 description 1
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- -1 fluorocarbons Chemical class 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000003021 water soluble solvent Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
【解決手段】研磨装置10は、研磨パッド12と冷却剤噴射部13とを備える。研磨パッド12は、研磨対象物と接する研磨面18を有する。冷却剤噴射部13は、前記研磨面18に、気化熱により前記研磨パッド18を冷却する冷却剤を吹き付ける。
【選択図】図1
Description
(第1実施形態)
まず、第1実施形態による研磨装置の概略について説明する。図1に示すように第1実施形態による研磨装置10は、半導体装置の製造工程において研磨対象物となるウェーハ11をCMPによって研磨する。研磨装置10は、研磨パッド12および冷却剤噴射部13を備えている。また、研磨装置10は、テーブル14、研磨ヘッド15およびスラリー供給部16を備えている。研磨パッド12は、例えば発泡性の樹脂などによって円板状に形成されている。研磨パッド12は、テーブル14の研磨ヘッド15側、すなわち上方に設けられている。テーブル14は、駆動装置17によって駆動され、上方に設けられている研磨パッド12とともに回転する。研磨パッド12は、研磨ヘッド15側の面、すなわち重力方向において上端面に研磨面18を有している。
図3(A)に示すように研磨の対象となるウェーハ30は、半導体基板31に図示しないトランジスタやメモリセルなどの素子が形成されている。そして、ウェーハ30は、素子を覆うシリコン酸化膜などの絶縁膜32が形成され、この絶縁膜32をシリコン窒化膜などのエッチングストッパ膜33が覆い、このエッチングストッパ膜33をシリコン酸化膜などの絶縁膜34が覆っている。これらエッチングストッパ膜33および絶縁膜34には、図示しない素子に接続する配線溝35が形成されている。この配線溝35に沿ってTi膜などのバリアメタル膜36が形成され、配線材料となるCu膜37が形成されている。
第2実施形態による研磨装置を図4に示す。
図4に示す第2実施形態による研磨装置10は、第1実施形態の構成に加え、冷却剤噴射制御部40を備えている。冷却剤噴射制御部40は、冷却剤配管部23を開閉する上述の開閉部24、および制御ユニット41で構成されている。制御ユニット41は、例えばCPU、ROMおよびRAMを有するマイクロコンピュータで構成されている。制御ユニット41は、ROMに記憶されているコンピュータプログラムにしたがって開閉部24による冷却剤配管部23の開閉を制御する。開閉部24は、例えば電磁弁などで構成されており、制御ユニット41からの制御信号によって冷却剤配管部23を開閉する。このように開閉部24によって冷却剤配管部23を開閉することにより、噴射ノズル21から噴射される冷却剤の噴射量または噴射期間は制御される。
第3実施形態による研磨装置を図5に示す。
図5に示す第3実施形態による研磨装置10は、冷却剤回収部50を備えている。冷却剤回収部50は、噴射ノズル21から噴射されて気化した冷却剤を回収する。この冷却剤回収部50は、フード状に形成され、噴射ノズル21を含み冷却剤が噴射される領域を覆っている。気化熱を利用する冷却剤には、引火性を有する物質もある。
第4実施形態による研磨装置を図6に示す。
図6に示す第4実施形態による研磨装置10は、冷却容器60を備えている。冷却容器60は、容器状に形成されており、研磨パッド12側の端部に研磨面18に接する底板部61を有している。また、冷却剤噴射部13の噴射ノズル21は、この冷却容器60の内側に設けられており、底板部61に向けて冷却剤を吹き付ける。底板部61は、例えば炭化ケイ素などのように、熱伝導性および耐摩耗性が高く、かつ金属汚染を招くおそれの無い材料で形成することが好ましい。また、底板部61は、例えば熱伝導性の高い金属や炭素で形成し、この研磨面18側を炭化ケイ素などでコーティングする構成としてもよい。このような底板部61に吹き付けられた冷却剤は、底板部61またはその近傍で気化し、その気化熱によって底板部61を冷却する。
Claims (5)
- 研磨対象物と接する研磨面を有する研磨パッドと、
前記研磨面に、気化熱により前記研磨パッドを冷却する冷却剤を吹き付ける冷却剤噴射部と、
を備える研磨装置。 - 研磨対象物と接する研磨パッドと、
前記研磨面に接する容器状の冷却容器と、
前記冷却容器の内側に、気化熱により前記冷却容器を通して前記研磨パッドを冷却する冷却剤を吹き付ける冷却剤噴射部と、
を備える研磨装置。 - 前記研磨パッドによる前記研磨対象物の研磨の進行によって変化する前記研磨対象物の特性値を検出する特性値検出手段と、
前記特性値検出手段で検出した前記特性値に応じて前記冷却剤噴射部から噴射される前記冷却剤の噴射量または噴射期間の少なくともいずれか一方を制御する冷却剤噴射制御部と、
をさらに備える請求項1または2記載の研磨装置。 - 前記冷却剤噴射部から噴射されて気化した前記冷却剤を回収する冷却剤回収部をさらに備える請求項1または2記載の研磨装置。
- 研磨対象物を研磨パッドの研磨面で研磨する研磨工程と、
前記研磨工程の少なくとも一部の期間に、前記研磨面へ気化熱により冷却する冷却剤を用いて前記研磨パッドの前記研磨面を冷却する冷却工程と、
を含む研磨方法。
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JP2014003254A JP6139420B2 (ja) | 2014-01-10 | 2014-01-10 | 研磨装置および研磨方法 |
US14/301,713 US20150196988A1 (en) | 2014-01-10 | 2014-06-11 | Polish apparatus and polish method |
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Cited By (5)
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WO2021030351A1 (en) * | 2019-08-13 | 2021-02-18 | Applied Materials, Inc. | Low-temperature metal cmp for minimizing dishing and corrosion, and improving pad asperity |
CN112743440A (zh) * | 2021-01-27 | 2021-05-04 | 东莞市信恒智能装备科技有限公司 | 一种电脑机箱主面板加工用具有循环式结构的抛光装置 |
US11597052B2 (en) | 2018-06-27 | 2023-03-07 | Applied Materials, Inc. | Temperature control of chemical mechanical polishing |
US11826872B2 (en) | 2020-06-29 | 2023-11-28 | Applied Materials, Inc. | Temperature and slurry flow rate control in CMP |
US11919123B2 (en) | 2020-06-30 | 2024-03-05 | Applied Materials, Inc. | Apparatus and method for CMP temperature control |
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KR20220116324A (ko) | 2020-06-29 | 2022-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학 기계적 연마를 위한 스팀 생성의 제어 |
US11577358B2 (en) | 2020-06-30 | 2023-02-14 | Applied Materials, Inc. | Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing |
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- 2014-06-11 US US14/301,713 patent/US20150196988A1/en not_active Abandoned
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US11597052B2 (en) | 2018-06-27 | 2023-03-07 | Applied Materials, Inc. | Temperature control of chemical mechanical polishing |
WO2021030351A1 (en) * | 2019-08-13 | 2021-02-18 | Applied Materials, Inc. | Low-temperature metal cmp for minimizing dishing and corrosion, and improving pad asperity |
US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
US11826872B2 (en) | 2020-06-29 | 2023-11-28 | Applied Materials, Inc. | Temperature and slurry flow rate control in CMP |
US11919123B2 (en) | 2020-06-30 | 2024-03-05 | Applied Materials, Inc. | Apparatus and method for CMP temperature control |
CN112743440A (zh) * | 2021-01-27 | 2021-05-04 | 东莞市信恒智能装备科技有限公司 | 一种电脑机箱主面板加工用具有循环式结构的抛光装置 |
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US20150196988A1 (en) | 2015-07-16 |
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