JP2015122504A5 - - Google Patents

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Publication number
JP2015122504A5
JP2015122504A5 JP2014259265A JP2014259265A JP2015122504A5 JP 2015122504 A5 JP2015122504 A5 JP 2015122504A5 JP 2014259265 A JP2014259265 A JP 2014259265A JP 2014259265 A JP2014259265 A JP 2014259265A JP 2015122504 A5 JP2015122504 A5 JP 2015122504A5
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JP
Japan
Prior art keywords
molecular weight
peel resistance
low
barc
photoresists
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JP2014259265A
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English (en)
Japanese (ja)
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JP6014110B2 (ja
JP2015122504A (ja
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Publication of JP2015122504A5 publication Critical patent/JP2015122504A5/ja
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JP2014259265A 2013-12-23 2014-12-22 ギャップ充填方法 Active JP6014110B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361920344P 2013-12-23 2013-12-23
US61/920,344 2013-12-23

Publications (3)

Publication Number Publication Date
JP2015122504A JP2015122504A (ja) 2015-07-02
JP2015122504A5 true JP2015122504A5 (cg-RX-API-DMAC7.html) 2016-06-23
JP6014110B2 JP6014110B2 (ja) 2016-10-25

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ID=53533840

Family Applications (1)

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JP2014259265A Active JP6014110B2 (ja) 2013-12-23 2014-12-22 ギャップ充填方法

Country Status (5)

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US (1) US9558987B2 (cg-RX-API-DMAC7.html)
JP (1) JP6014110B2 (cg-RX-API-DMAC7.html)
KR (2) KR20150075046A (cg-RX-API-DMAC7.html)
CN (1) CN105304550B (cg-RX-API-DMAC7.html)
TW (1) TWI573844B (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10163632B2 (en) * 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and process for substrate modification
KR20210145986A (ko) * 2020-05-26 2021-12-03 에스케이하이닉스 주식회사 평탄화층 형성 방법 및 이를 이용한 패턴 형성 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW299475B (cg-RX-API-DMAC7.html) 1993-03-30 1997-03-01 Siemens Ag
JP3807587B2 (ja) * 1999-07-12 2006-08-09 協和化学工業株式会社 難燃性熱可塑性樹脂組成物及びその成形品
US6461717B1 (en) * 2000-04-24 2002-10-08 Shipley Company, L.L.C. Aperture fill
JP4654544B2 (ja) 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
JP4574145B2 (ja) 2002-09-13 2010-11-04 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. エアギャップ形成
JP4210858B2 (ja) * 2002-12-26 2009-01-21 日産化学工業株式会社 アルカリ溶解型リソグラフィー用ギャップフィル材形成組成物
TWI310484B (en) * 2003-02-21 2009-06-01 Nissan Chemical Ind Ltd Composition containing acrylic polymer for forming gap-filling material for lithography
KR101318182B1 (ko) * 2005-01-21 2013-10-16 닛산 가가쿠 고교 가부시키 가이샤 보호된 카르복실기를 갖는 화합물을 포함하는 리소그라피용 하층막 형성방법
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
CN101459106B (zh) * 2007-12-13 2011-01-12 中芯国际集成电路制造(上海)有限公司 浅沟槽隔离结构的形成方法
JP5040839B2 (ja) * 2008-07-18 2012-10-03 Jsr株式会社 レジスト下層膜形成組成物
WO2012111459A1 (en) 2011-02-17 2012-08-23 Fujifilm Corporation Gap embedding composition, method of embedding gap and method of producing semiconductor device by using the composition

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