JP2015118954A - Method of manufacturing component built-in substrate, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress warpage of a substrate, to suppress position displacement of components, and to achieve an excellent arrangement accuracy of components.SOLUTION: A method includes the following steps of: (A) vacuum-laminating a first adhesive film 10 including a first supporting body 11 and a first thermoset resin composition layer 12 bonded with the first supporting body 11, on an insulation substrate 1' provided with a cavity 1a penetrating between first and second principal surfaces; (B) temporarily bonding components on the first thermoset resin composition layer 12 in the cavity 1a; (C) vacuum-laminating a second adhesive film including a second supporting body and a second thermoset resin composition layer bonded with the second supporting body, on a second principal surface of the insulation substrate 1' at a condition that a heating temperature of the surface of the first adhesive film 10 is lower than that of the surface of the second adhesive film surface; and (D) thermally curing the first and second thermoset resin composition layers to form an insulating layer.

Description

  The present invention relates to a method for manufacturing a component-embedded substrate and a semiconductor device.

  In recent years, the demand for small high-performance electronic devices such as smartphones and tablet PCs is increasing. Accordingly, there is a demand for further enhancement and miniaturization of printed wiring boards used in such small high-performance electronic devices.

  Components such as a bare chip, a chip capacitor, and a chip inductor are mounted on the printed wiring board. Conventionally, such components have been mounted only on the surface circuit of the printed wiring board, but the amount of mounting is limited, and it is possible to meet the recent demand for higher functionality and downsizing of the printed wiring board. It was difficult.

  In order to deal with such a problem, a component-embedded substrate has been proposed as a printed wiring board that can be miniaturized while increasing the amount of components mounted (for example, Patent Document 1). In general, a component-embedded substrate is manufactured by arranging components inside an inner layer circuit substrate and then sequentially laminating an insulating layer and a conductor layer to form a multilayer wiring.

JP 2011-216636 A

  Depending on the electronic device, a non-multilayered wiring board (two-layer wiring board) in which circuits are formed on both surfaces of the insulating member may be employed. In such a case, the inventors of the present invention obtain a two-layer wiring board that is more functional and can be miniaturized by arranging components inside the insulating substrate and then forming an insulating layer and a conductor layer. Inspired.

  A component-embedded substrate in which components are arranged inside such an insulating substrate can be manufactured as follows using, for example, an insulating substrate in which a cavity for housing a component is formed. (I) A temporary attachment material for temporarily attaching a component is laminated on one main surface of the insulating substrate in which the cavity is formed. (Ii) A part is temporarily attached to the adhesive surface of the temporary attachment material exposed through the cavity. (Iii) A thermosetting resin composition layer is provided on the other main surface of the insulating substrate with the components temporarily attached in the cavity, and the insulating layer is formed by thermosetting. (Iv) After peeling off the tacking material, a thermosetting resin composition layer is provided on one main surface of the exposed insulating substrate and thermally cured to form an insulating layer. Thereafter, (v) a through hole is formed, and (v) a conductor layer is provided on the insulating layer by plating or the like.

  In the case of using an insulating substrate with a high cavity density or a thin thickness to achieve further miniaturization and thinning of the component-embedded substrate, the present inventors have applied to one main surface of the insulating substrate. In the stage where the insulating layer is formed (after (iii) above), there may be a phenomenon that the insulating substrate curls (hereinafter also referred to as “substrate warpage”) with the surface provided with the insulating layer as the inner peripheral side. I found. When the substrate warps, the substrate conveyance is hindered and the manufacturing efficiency (yield) is reduced.

  In addition, miniaturization of built-in components and miniaturization of circuits are advancing, and there is an increasing demand for the placement accuracy of components within the substrate cavity.

  It is an object of the present invention to provide a method for manufacturing a component-embedded substrate that can suppress substrate warpage and can suppress the positional change (displacement) of components in a cavity and realize excellent component placement accuracy. .

  As a result of intensive studies on the above problems, the present inventors have found that the above problems can be solved by manufacturing a component-embedded substrate by the following specific method, and have completed the present invention.

That is, the present invention includes the following contents.
[1] Method for manufacturing component-embedded substrate including the following steps (A), (B), (C) and (D) in this order:
(A) an insulating substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces, the first support and the first support; The first adhesive film including the first thermosetting resin composition layer to be bonded is vacuum-laminated such that the first thermosetting resin composition layer is bonded to the first main surface of the insulating substrate. Step (B) Step of Temporarily Attaching Parts to the First Thermosetting Resin Composition Layer in the Cavity (C) On the second main surface of the insulating substrate, the second support and the second support The second adhesive film including the second thermosetting resin composition layer to be bonded is vacuum-laminated so that the second thermosetting resin composition layer is bonded to the second main surface of the insulating substrate. A step of vacuum laminating under the condition that the heating temperature of the first adhesive film surface is lower than the heating temperature of the second adhesive film surface. ) First and step a second thermosetting resin composition layer to form a thermoset insulating layer.
[2] The method according to [1], wherein the insulating substrate is a cured prepreg, a glass substrate, or a ceramic substrate.
[3] In the step (C), when the heating temperature of the first adhesive film surface is T ₁ (° C.) and the heating temperature of the second adhesive film surface is T ₂ (° C.), T ₁ and T ₂ are The method according to [1] or [2], wherein T ₂ −40 ≦ T ₁ ≦ T ₂ −10 is satisfied.
[4] The method according to any one of [1] to [3], wherein the second thermosetting resin composition layer is thicker than the first thermosetting resin composition layer.
[5] In step (A), the height h _A of the cavity of the insulating substrate before vacuum-laminating the first adhesive film and non-resin filling of the cavity of the insulating substrate after vacuum-laminating the first adhesive film The method according to any one of [1] to [4], wherein the height h _{B of the} region satisfies a relationship of 0.8 h _A ≦ h _B ≦ h _A.
[6] The method according to any one of [1] to [5], wherein in the step (C), the melt viscosity of the first thermosetting resin composition layer is 2000 poise or more.
[7] Between the step (C) and the step (D), including a step of smoothing both sides of the first adhesive film side and the second adhesive film side by a hot press, according to [1] to [6] The method according to any one.
[8] The method according to any one of [1] to [7], wherein in step (D), thermosetting is performed with the first and second supports attached.
[9] The method according to any one of [1] to [8], wherein the insulating substrate has a thickness of 30 to 350 μm.
[10] The method according to any one of [1] to [9], wherein the pitch between the cavities is 1 to 10 mm.
[11] The method according to any one of [1] to [10], wherein the inorganic filler content in the first thermosetting resin composition layer is 50% by mass or more.
[12] The method for manufacturing a component-embedded substrate according to any one of [1] to [11], wherein the warpage of the substrate obtained in the step (B) is 25 mm or less.
[13] The method according to any one of [1] to [12], further comprising (E) a step of forming a through hole.
[14] The method according to any one of [1] to [13], further comprising (F) a step of forming a conductor layer on the insulating layer.
[15] Step (F)
Roughening the insulating layer, and forming a conductor layer on the roughened insulating layer by plating;
[14] The method according to [14].
[16] An insulating substrate having a first main surface and a second main surface, in which a cavity penetrating between the first and second main surfaces is formed;
A first insulating layer bonded to the first main surface of the insulating substrate;
A second insulating layer bonded to the second main surface of the insulating substrate;
A component provided on the first insulating layer so as to be accommodated inside the cavity of the insulating substrate,
The component-embedded insulating substrate, wherein the second insulating layer fills the cavity of the insulating substrate so as to embed the component.
[17] first and second conductor layers;
The component-embedded insulating substrate according to [16], which is provided between the first and second conductor layers by bonding to the first and second conductor layers,
An interlayer connection body for electrically connecting the first and second conductor layers;
A two-layer wiring board with built-in components.
[18] The component built-in two-layer wiring board according to [17], wherein the first and second conductor layers are formed by plating.
[19] A semiconductor device including a component-embedded substrate manufactured by the method according to any one of [1] to [15].

  ADVANTAGE OF THE INVENTION According to this invention, while being able to suppress board curvature, the manufacturing method of the component built-in board which can suppress the position change (deviation) of the component in a cavity, and can implement | achieve the outstanding component placement precision can be provided. .

FIG. 1A is a schematic diagram (1) showing a procedure for preparing an insulating substrate having a cavity used in the method for manufacturing a component-embedded substrate of the present invention. FIG. 1B is a schematic diagram (2) showing a procedure for preparing an insulating substrate with a cavity used in the method for manufacturing a component-embedded substrate of the present invention. FIG. 2 is a schematic view showing an embodiment of the first adhesive film used in the method for producing a component-embedded substrate of the present invention. FIG. 3A is a schematic diagram (1) for explaining the method of manufacturing the component-embedded substrate in one embodiment of the present invention. FIG. 3B is a schematic diagram (2) for explaining the method of manufacturing the component-embedded substrate in one embodiment of the present invention. FIG. 3C is a schematic diagram (3) for explaining the method of manufacturing the component-embedded substrate in one embodiment of the present invention. Drawing 3D is a mimetic diagram (4) for explaining the manufacturing method of the component built-in substrate in one embodiment of the present invention. FIG. 3E is a schematic diagram (5) for explaining the method of manufacturing the component-embedded substrate in one embodiment of the present invention. FIG. 3F is a schematic diagram (6) for explaining the method of manufacturing the component-embedded substrate in one embodiment of the present invention. FIG. 3G is a schematic diagram (7) for explaining the method of manufacturing the component-embedded substrate in one embodiment of the present invention. FIG. 4 is a schematic diagram for explaining a substrate warpage evaluation method.

  Before describing the manufacturing method of the component built-in substrate of the present invention in detail, the “insulating substrate having a cavity” and the “adhesive film” used in the manufacturing method of the present invention will be described.

<Insulated substrate with cavities>
In the manufacturing method of the present invention, an insulating substrate having first and second principal surfaces and having a cavity penetrating between the first and second principal surfaces is used. Such an insulating substrate is abbreviated as “an insulating substrate having a cavity”.

  The insulating substrate on which the cavity is formed may be prepared according to an arbitrary procedure. Hereinafter, an example of a procedure for preparing an insulating substrate in which a cavity is formed will be described with reference to FIGS. 1A and 1B.

  First, an insulating substrate is prepared (FIG. 1A). In the present invention, the “insulating substrate” refers to a plate-like substrate having first and second main surfaces facing each other and exhibiting electrical insulation. In the following description, for the sake of convenience, the first main surface of the insulating substrate represents the lower main surface of the illustrated insulating substrate, and the second main surface of the insulating substrate is the upper side of the illustrated insulating substrate. It represents the main surface.

  The insulating substrate 1 is not particularly limited, and may be a substrate provided with insulation by coating a conductive substrate such as a metal substrate with an insulating material. However, from the viewpoint of suppressing substrate warpage, insulation reliability of the component built-in substrate From the viewpoint of property, a cured prepreg, a glass substrate or a ceramic substrate is preferable, and a cured prepreg is more preferable.

  The cured prepreg refers to a cured product of the prepreg. The prepreg is a sheet-like material including a thermosetting resin composition and a sheet-like fiber base material, and can be formed, for example, by impregnating a sheet-like fiber base material with a thermosetting resin composition. The thermosetting resin composition used for the prepreg is not particularly limited as long as the cured product has sufficient hardness and insulation, and a conventionally known thermosetting resin used for forming an insulating layer of a printed wiring board. A composition may be used. Or the thermosetting resin composition used for a prepreg may be the same composition as the thermosetting resin composition used for the adhesive film mentioned later. The sheet-like fiber base material used for the prepreg is not particularly limited, and those commonly used as a prepreg base material may be used. From the viewpoint of reducing the thermal expansion coefficient of the cured prepreg, the sheet fiber substrate is preferably a glass fiber substrate or an organic fiber substrate (for example, an aramid fiber substrate), more preferably a glass fiber substrate, and glass. A woven fabric (glass cloth) is more preferable. As a glass fiber used for a glass fiber base material, from a viewpoint which can reduce a thermal expansion coefficient, 1 or more types of glass fibers selected from the group which consists of E glass fiber, S glass fiber, T glass fiber, and Q glass fiber are included. Preferably, S glass fiber and Q glass fiber are more preferable, and Q glass fiber is more preferable. Q glass fiber means a glass fiber in which the content of silicon dioxide occupies 90% by mass or more. The thickness of the sheet-like fiber base material is preferably 200 μm or less, more preferably 100 μm or less, further preferably 80 μm or less, even more preferably 50 μm or less, and particularly preferably 40 μm or less, from the viewpoint of thinning the cured prepreg. . From the viewpoint of obtaining a cured prepreg having sufficient rigidity, the lower limit of the thickness of the sheet-like fiber base material is preferably 1 μm or more, more preferably 10 μm or more, and further preferably 15 μm or more.

  The thickness of the insulating substrate 1 is preferably smaller from the viewpoint of reducing the thickness of the component-embedded substrate, preferably less than 400 μm, more preferably 350 μm or less, still more preferably 300 μm or less, and even more preferably 250 μm or less, particularly Preferably they are 200 micrometers or less, 180 micrometers or less, 170 micrometers or less, 160 micrometers or less, or 150 micrometers or less. According to the method of the present invention, even when such a thin insulating substrate is used, the occurrence of substrate warpage can be suppressed. The lower limit of the thickness of the insulating substrate 1 is not particularly limited, but is preferably 30 μm or more, more preferably 40 μm or more, still more preferably 50 μm or more, and even more preferably 60 μm or more, 70 μm or more, from the viewpoint of improving the handleability during transportation. Or 80 μm or more.

  The thermal expansion coefficient of the insulating substrate 1 is preferably 15 ppm or less, more preferably 13 ppm or less, and still more preferably 11 ppm or less, from the viewpoint of suppressing the occurrence of circuit distortion and cracks. The lower limit of the thermal expansion coefficient of the insulating substrate 1 depends on the composition of the resin composition used for forming the insulating layer, but is preferably −2 ppm or more, more preferably 0 ppm or more, and further preferably 4 ppm or more. In the present invention, the thermal expansion coefficient of the insulating substrate is a linear thermal expansion coefficient of 25 to 150 ° C. in the planar direction obtained by thermomechanical analysis (TMA) by a tensile load method. Examples of thermomechanical analyzers that can be used to measure the linear thermal expansion coefficient of an insulating substrate include “Thermo Plus TMA8310” manufactured by Rigaku Corporation and “TMA-SS6100” manufactured by Seiko Instruments Inc.

  The glass transition temperature (Tg) of the insulating substrate 1 is preferably 170 ° C. or higher, more preferably 180 ° C. or higher, from the viewpoint of mechanical strength of the component-embedded substrate. Although the upper limit of Tg of the insulated substrate 1 is not specifically limited, Usually, it is 300 degrees C or less. The Tg of the insulating substrate can be measured by thermomechanical analysis using a tensile load method. The same thermomechanical analyzer as described above can be used.

  Next, a cavity for housing components is provided in the insulating substrate (FIG. 1B). As schematically shown in FIG. 1B, a cavity 1 a penetrating between the first and second main surfaces of the insulating substrate can be provided at a predetermined position of the insulating substrate 1. The cavity 1a can be formed by a known method using, for example, a drill, a laser, plasma, an etching medium, or the like in consideration of the characteristics of the insulating substrate 1.

  Although only one cavity 1a is shown in FIG. 1B, a plurality of cavities 1a can be provided at predetermined intervals. The pitch between the cavities 1a is preferably short from the viewpoint of miniaturization of the component built-in substrate. The pitch between the cavities 1a is preferably 10 mm or less, more preferably 9 mm or less, still more preferably 8 mm or less, even more preferably 7 mm or less, and particularly preferably 6 mm or less, although it depends on the opening size of the cavity 1a itself. According to the method of the present invention, even when the cavities are provided at such a short pitch, occurrence of substrate warpage can be suppressed. The lower limit of the pitch between the cavities 1a is usually 1 mm or more, 2 mm or more, although depending on the opening size of the cavities 1a itself. Each pitch between the cavities 1a does not need to be the same across the insulating substrate, and may be different.

  The opening shape of the cavity 1a is not particularly limited, and may be an arbitrary shape such as a rectangle, a circle, a substantially rectangle, or a substantially circle. Moreover, although the opening dimension of the cavity 1a depends on the design of the circuit wiring, for example, when the opening shape of the cavity 1a is rectangular, it is preferably 5 mm × 5 mm or less, and more preferably 3 mm × 3 mm or less. Although the minimum of the said opening dimension is based also on the dimension of the components accommodated, it is 0.5 mm x 0.5 mm or more normally. The opening shape and opening size of the cavity 1a do not need to be the same over the insulating substrate, and may be different.

  By the above procedure, an insulating substrate 1 ′ having a cavity can be prepared.

<Adhesive film>
In the manufacturing method of the present invention, the first adhesive film and the second adhesive film are used.

(First adhesive film)
In FIG. 2, the end surface of a 1st adhesive film is shown typically. The first adhesive film 10 includes a first support 11 and a first thermosetting resin composition layer 12 that is bonded to the first support.

  Examples of the first support include a film made of a plastic material, a metal foil, and a release paper, and a film made of a plastic material and a metal foil are preferable.

  When a film made of a plastic material is used as the first support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes abbreviated as “PET”) and polyethylene naphthalate (hereinafter abbreviated as “PEN”). Such as polyester, polycarbonate (hereinafter sometimes abbreviated as “PC”), acrylic such as polymethyl methacrylate (PMMA), cyclic polyolefin, triacetyl cellulose (TAC), and polyether sulfide (PES). , Polyether ketone, polyimide and the like. Among these, polyethylene terephthalate and polyethylene naphthalate are preferable, and inexpensive polyethylene terephthalate is particularly preferable.

  When metal foil is used as the first support, examples of the metal foil include copper foil and aluminum foil, and copper foil is preferable. As the copper foil, a foil made of a single metal of copper may be used, and a foil made of an alloy of copper and another metal (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.). It may be used.

  The first support may be subjected to a mat treatment or a corona treatment on a surface to be bonded to a first thermosetting resin composition layer described later.

  Moreover, as the first support, a support with a release layer having a release layer on the surface to be bonded to the first thermosetting resin composition layer described later may be used. Examples of the release agent used for the release layer of the support with a release layer include one or more release agents selected from the group consisting of alkyd resins, polyolefin resins, urethane resins, and silicone resins. . As the support with a release layer, a commercially available product may be used. For example, “SK-1” manufactured by Lintec Corporation, which is a PET film having a release layer mainly composed of an alkyd resin release agent. , “AL-5”, “AL-7”, and the like.

  Although the thickness of a 1st support body is not specifically limited, The range of 5 micrometers-75 micrometers is preferable, and the range of 10 micrometers-60 micrometers is more preferable. In addition, when using a support body with a release layer, it is preferable that the thickness of the whole support body with a release layer is the said range.

  As described later, the first support may contain a laser absorbing material. Examples of the laser absorbing material include metal compound powder, carbon powder, metal powder, and black dye. When the laser absorbing material is contained, the content of the laser absorbing material in the first support is preferably 0.05 to 40% by mass, more preferably 0.1 to 20% by mass.

  The resin composition used for the first thermosetting resin composition layer reduces the coefficient of thermal expansion of the resulting insulating layer and prevents the occurrence of cracks and circuit distortion due to the difference in thermal expansion between the insulating layer and the conductor layer. In view of the viewpoint, and from the viewpoint of suppressing the positional deviation of the component by preventing an excessive decrease in the melt viscosity, it is preferable to include an inorganic filler.

The content of the inorganic filler in the resin composition is preferably 30% by mass from the viewpoint of lowering the coefficient of thermal expansion of the resulting insulating layer and from preventing excessive decrease in melt viscosity and suppressing misalignment of parts. More preferably, it is 40% by mass or more, more preferably 50% by mass or more, still more preferably 60% by mass or more, particularly preferably 62% by mass or more, 64% by mass or more, or 66% by mass or more. In particular, from the viewpoint of suppressing the positional deviation of the parts, the content of the inorganic filler in the resin composition is preferably 50% by mass or more. The upper limit of the content of the inorganic filler in the resin composition is preferably 90% by mass or less, more preferably 85% by mass or less, from the viewpoint of mechanical strength of the obtained insulating layer.
In addition, in this invention, content of each component in a resin composition is a value when the sum total of the non-volatile component in a resin composition is 100 mass%.

  Examples of inorganic fillers include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, talc, clay, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, and nitride. Boron, aluminum nitride, manganese nitride, aluminum borate, barium titanate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, barium zirconate, calcium zirconate, zirconium phosphate, and phosphoric acid Examples include tungsten. Among these, silica such as amorphous silica, fused silica, crystalline silica, synthetic silica, and hollow silica is particularly suitable. Moreover, spherical silica is preferable as the silica. An inorganic filler may be used individually by 1 type, and may be used in combination of 2 or more type. Examples of commercially available spherical fused silica include “SOC2” and “SOC1” manufactured by Admatechs.

  The average particle size of the inorganic filler is preferably in the range of 0.01 μm to 4 μm, more preferably in the range of 0.05 μm to 2 μm, further preferably in the range of 0.1 μm to 1 μm, and further in the range of 0.3 μm to 0.8 μm. More preferred. The average particle diameter of the inorganic filler can be measured by a laser diffraction / scattering method based on Mie scattering theory. Specifically, the particle size distribution of the inorganic filler can be prepared on a volume basis by a laser diffraction / scattering particle size distribution measuring apparatus, and the median diameter can be measured as the average particle diameter. As the measurement sample, an inorganic filler dispersed in water by ultrasonic waves can be preferably used. As a laser diffraction scattering type particle size distribution measuring apparatus, LA-500 manufactured by Horiba, Ltd. can be used.

  Inorganic fillers are aminosilane coupling agents, epoxysilane coupling agents, mercaptosilane coupling agents, silane coupling agents, organosilazane compounds, titanate coupling agents from the viewpoint of improving moisture resistance and dispersibility. It is preferable that it is processed with 1 or more types of surface treating agents. Examples of commercially available surface treatment agents include “KBM403” (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., and “KBM803” (3-mercaptopropyltrimethoxy manufactured by Shin-Etsu Chemical Co., Ltd.). Silane), Shin-Etsu Chemical "KBE903" (3-aminopropyltriethoxysilane), Shin-Etsu Chemical "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane), Shin-Etsu Chemical "SZ-31" (Hexamethyldisilazane) manufactured by Co., Ltd.

The degree of surface treatment with the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler. Carbon content per unit surface area of the inorganic filler, from the viewpoint of improving dispersibility of the inorganic filler is preferably 0.02 mg / ^{m 2} or more, 0.1 mg / ^{m 2} or more preferably, 0.2 mg / ^{m 2} The above is more preferable. On the other hand, 1 mg / m ² or less is preferable, 0.8 mg / m ² or less is more preferable, and 0.5 mg / m ² or less is more preferable from the viewpoint of preventing an increase in the melt viscosity of the resin varnish or the sheet form. preferable.

  The amount of carbon per unit surface area of the inorganic filler can be measured after the surface-treated inorganic filler is washed with a solvent (for example, methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler surface-treated with the surface treatment agent and ultrasonically cleaned at 25 ° C. for 5 minutes. After removing the supernatant and drying the solid, the carbon amount per unit surface area of the inorganic filler can be measured using a carbon analyzer. As the carbon analyzer, “EMIA-320V” manufactured by HORIBA, Ltd. can be used.

As the thermosetting resin used for the first thermosetting resin composition layer, a conventionally known thermosetting resin used when forming an insulating layer of a printed wiring board can be used, and among them, an epoxy resin is used. preferable. In one embodiment, the resin composition used for the first thermosetting resin composition layer includes an inorganic filler and an epoxy resin. The resin composition may also contain a curing agent as necessary. In one embodiment, the resin composition used for the first thermosetting resin composition layer includes an inorganic filler, an epoxy resin, and a curing agent. The resin composition used for the first thermosetting resin composition layer may further contain additives such as a thermoplastic resin, a curing accelerator, a flame retardant, and rubber particles.
Hereinafter, an epoxy resin, a curing agent, and an additive that can be used as a material for the resin composition will be described.

-Epoxy resin-
Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol epoxy resin, naphthol novolac epoxy resin, phenol novolac. Type epoxy resin, tert-butyl-catechol type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, anthracene type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin , Linear aliphatic epoxy resin, epoxy resin having butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring-containing epoxy Resins, cyclohexanedimethanol type epoxy resins, naphthylene ether type epoxy resins and trimethylol type epoxy resins. An epoxy resin may be used individually by 1 type, or may use 2 or more types together.

  The epoxy resin preferably contains an epoxy resin having two or more epoxy groups in one molecule. When the nonvolatile component of the epoxy resin is 100% by mass, at least 50% by mass or more is preferably an epoxy resin having two or more epoxy groups in one molecule. Among them, it has two or more epoxy groups in one molecule and has a liquid epoxy resin (hereinafter referred to as “liquid epoxy resin”) at a temperature of 20 ° C. and three or more epoxy groups in one molecule. And a solid epoxy resin at a temperature of 20 ° C. (hereinafter referred to as “solid epoxy resin”). By using a liquid epoxy resin and a solid epoxy resin in combination as an epoxy resin, a resin composition having excellent flexibility can be obtained. Moreover, the breaking strength of the insulating layer formed by curing the resin composition is also improved.

  As the liquid epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, or naphthalene type epoxy resin are preferable, and bisphenol A type epoxy resin, bisphenol F type epoxy resin, or naphthalene type epoxy resin are preferable. More preferred. Specific examples of the liquid epoxy resin include “HP4032”, “HP4032D”, “HP4032SS” (naphthalene type epoxy resin) manufactured by DIC Corporation, and “jER828EL” (bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation. "JER807" (bisphenol F type epoxy resin), "jER152" (phenol novolac type epoxy resin), "ZX1059" (mixed product of bisphenol A type epoxy resin and bisphenol F type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. And “EX-721” (glycidyl ester type epoxy resin) manufactured by Nagase ChemteX Corporation. These may be used individually by 1 type, or may use 2 or more types together.

  The solid epoxy resin includes a tetrafunctional naphthalene type epoxy resin, a cresol novolac type epoxy resin, a dicyclopentadiene type epoxy resin, a trisphenol type epoxy resin, a naphthol novolac type epoxy resin, a biphenyl type epoxy resin, or a naphthylene ether type epoxy. Resin is preferable, tetrafunctional naphthalene type epoxy resin, biphenyl type epoxy resin, or naphthylene ether type epoxy resin is more preferable, and biphenyl type epoxy resin is more preferable. Specific examples of the solid epoxy resin include “HP-4700”, “HP-4710” (tetrafunctional naphthalene type epoxy resin), “N-690” (cresol novolac type epoxy resin) manufactured by DIC Corporation, “ N-695 "(cresol novolac type epoxy resin)," HP-7200 "(dicyclopentadiene type epoxy resin)," EXA7311 "," EXA7311-G3 "," HP6000 "," EXA7311-G4 "," EXA7311-G4S " ”(Naphthylene ether type epoxy resin),“ EPPN-502H ”(trisphenol epoxy resin) manufactured by Nippon Kayaku Co., Ltd.,“ NC7000L ”(naphthol novolac epoxy resin),“ NC3000H ”,“ NC3000 ”,“ NC3000L ” ”,“ NC3100 ”(biphenyl type XES resin), "ESN475" (naphthol novolak type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., "ESN485V" (naphthol novolak type epoxy resin), "YL6121" (biphenyl type epoxy resin) manufactured by Mitsubishi Chemical Corporation , “YX4000H”, “YX4000HK” (Bixylenol type epoxy resin), “PG-100”, “CG-500” manufactured by Osaka Gas Chemical Co., Ltd., “YL7800” (fluorene type epoxy manufactured by Mitsubishi Chemical Corporation) Resin) and the like.

When a liquid epoxy resin and a solid epoxy resin are used in combination as the epoxy resin, the quantitative ratio thereof (liquid epoxy resin: solid epoxy resin) is in the range of 1: 0.1 to 1: 4 in terms of mass ratio. preferable. By making the quantitative ratio of the liquid epoxy resin and the solid epoxy resin within such a range, i) suitable adhesiveness is obtained when used in the form of an adhesive film, ii) when used in the form of an adhesive film Sufficient flexibility and handleability are improved, and iii) an insulating layer having sufficient breaking strength can be obtained. From the viewpoint of the effects i) to iii) above, the quantitative ratio of liquid epoxy resin to solid epoxy resin (liquid epoxy resin: solid epoxy resin) is from 1: 0.3 to 1: 3.5 in mass ratio. Is more preferable, the range of 1: 0.6 to 1: 3 is more preferable, and the range of 1: 0.8 to 1: 2.5 is particularly preferable.
The content of the epoxy resin in the resin composition is preferably 3% by mass to 50% by mass, more preferably 5% by mass to 45% by mass, still more preferably 5% by mass to 40% by mass, and 7% by mass to 35% by mass. % Is particularly preferred.

  The epoxy equivalent of the epoxy resin is preferably 50 to 3000, more preferably 80 to 2000, and still more preferably 110 to 1000. By being in this range, the crosslink density of the cured product is sufficient and an insulating layer having a low surface roughness is obtained. The epoxy equivalent can be measured according to JIS K7236, and is the mass of a resin containing 1 equivalent of an epoxy group.

-Curing agent-
The curing agent is not particularly limited as long as it has a function of curing the epoxy resin. For example, a phenolic curing agent, a naphthol curing agent, an active ester curing agent, a benzoxazine curing agent, and a cyanate ester curing agent may be used. Can be mentioned. A hardening | curing agent may be used individually by 1 type, or may use 2 or more types together.

  As the phenol-based curing agent and the naphthol-based curing agent, a phenol-based curing agent having a novolak structure or a naphthol-based curing agent having a novolak structure is preferable from the viewpoint of heat resistance and water resistance. Moreover, from a viewpoint of adhesiveness with a conductor layer (circuit wiring), a nitrogen-containing phenol type hardening | curing agent is preferable and a triazine frame | skeleton containing phenol type hardening | curing agent is more preferable. Among these, from the viewpoint of highly satisfying heat resistance, water resistance, and adhesiveness (peel strength) to the conductor layer, it is preferable to use a triazine skeleton-containing phenol novolac resin as a curing agent.

  Specific examples of the phenol-based curing agent and the naphthol-based curing agent include, for example, “MEH-7700”, “MEH-7810”, “MEH-7785” manufactured by Meiwa Kasei Co., Ltd., and Nippon Kayaku Co., Ltd. “NHN”, “CBN”, “GPH”, “SN170”, “SN180”, “SN190”, “SN475”, “SN485”, “SN495”, “SN375”, “SN395” manufactured by Toto Kasei Co., Ltd. "LA7052", "LA7054", "LA3018", etc. manufactured by DIC Corporation.

  Although there is no restriction | limiting in particular as an active ester type hardening | curing agent, Generally ester groups with high reaction activity, such as phenol ester, thiophenol ester, N-hydroxyamine ester, ester of heterocyclic hydroxy compound, are in 1 molecule. A compound having two or more in the above is preferably used. The active ester curing agent is preferably obtained by a condensation reaction between a carboxylic acid compound and / or a thiocarboxylic acid compound and a hydroxy compound and / or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferable, and an active ester curing agent obtained from a carboxylic acid compound and a phenol compound and / or a naphthol compound is more preferable. Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid. Examples of the phenol compound or naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthaline, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m- Cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucin, Benzenetriol, dicyclopentadiene type diphenol, phenol novolac and the like.

  Specifically, an active ester compound containing a dicyclopentadiene-type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetylated product of a phenol novolac, and an active ester compound containing a benzoylated product of a phenol novolac are preferred, Of these, active ester compounds having a naphthalene structure and active ester compounds having a dicyclopentadiene type diphenol structure are more preferred. In the present invention, the “dicyclopentadiene type diphenol structure” represents a divalent structural unit composed of phenylene-dicyclopentalene-phenylene.

  As a commercial product of an active ester type curing agent, as an active ester compound containing a dicyclopentadiene type diphenol structure, “EXB9451”, “EXB9460”, “EXB9460S”, “HPC-8000-65T” (manufactured by DIC Corporation) ), “EXB9416-70BK” (manufactured by DIC Corporation) as an active ester compound containing a naphthalene structure, “DC808” (manufactured by Mitsubishi Chemical Corporation) as an active ester compound containing an acetylated product of phenol novolac, and benzoyl of phenol novolac Examples of the active ester compound containing a compound include “YLH1026” (manufactured by Mitsubishi Chemical Corporation).

  Specific examples of the benzoxazine-based curing agent include “HFB2006M” manufactured by Showa Polymer Co., Ltd., “Pd” and “Fa” manufactured by Shikoku Kasei Kogyo Co., Ltd.

  Examples of the cyanate ester curing agent include bisphenol A dicyanate, polyphenol cyanate, oligo (3-methylene-1,5-phenylene cyanate), 4,4′-methylenebis (2,6-dimethylphenyl cyanate), 4,4. '-Ethylidene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis (4-cyanate) phenylpropane, 1,1-bis (4-cyanatephenylmethane), bis (4-cyanate-3,5-dimethyl) Bifunctional cyanate resins such as phenyl) methane, 1,3-bis (4-cyanatephenyl-1- (methylethylidene)) benzene, bis (4-cyanatephenyl) thioether, and bis (4-cyanatephenyl) ether, phenol Novolac and K Polyfunctional cyanate resin derived from tetrazole novolac, these cyanate resins and partially triazine of prepolymer. Specific examples of the cyanate ester curing agent include “PT30” and “PT60” (both phenol novolak polyfunctional cyanate ester resins) and “BA230” (part or all of bisphenol A dicyanate) manufactured by Lonza Japan Co., Ltd. And the like, and the like, and the like.

  The amount ratio of the epoxy resin and the curing agent is preferably a ratio of [total number of epoxy groups of the epoxy resin]: [total number of reactive groups of the curing agent] in the range of 1: 0.2 to 1: 2. 1: 0.3-1: 1.5 are more preferable, and 1: 0.4-1: 1 are further more preferable. Here, the reactive group of the curing agent is an active hydroxyl group, an active ester group or the like, and varies depending on the type of the curing agent. Moreover, the total number of epoxy groups of the epoxy resin is a value obtained by dividing the value obtained by dividing the solid mass of each epoxy resin by the epoxy equivalent for all epoxy resins, and the total number of reactive groups of the curing agent is: The value obtained by dividing the solid mass of each curing agent by the reactive group equivalent is the total value for all curing agents. By setting the amount ratio of the epoxy resin and the curing agent in such a range, the heat resistance of the cured product of the resin composition is further improved.

  In one embodiment, the resin composition used for the first thermosetting resin composition layer includes the above-described inorganic filler, epoxy resin, and curing agent. The resin composition includes silica as an inorganic filler and a mixture of a liquid epoxy resin and a solid epoxy resin as an epoxy resin (the mass ratio of liquid epoxy resin: solid epoxy resin is in the range of 1: 0.1 to 1: 4. Is preferable, a range of 1: 0.3 to 1: 3.5 is more preferable, a range of 1: 0.6 to 1: 3 is further preferable, and a range of 1: 0.8 to 1: 2.5 is particularly preferable. 1 or more selected from the group consisting of a phenolic curing agent, a naphthol curing agent, an active ester curing agent, and a cyanate ester curing agent (preferably a phenol curing agent and a naphthol curing agent). One or more selected from the group consisting of, more preferably one or more selected from the group consisting of a triazine skeleton-containing phenol novolak resin and a naphthol-based curing agent, more preferably The curing agent) containing a triazine skeleton-containing phenol novolak resin, it is preferable to include, respectively. Regarding the resin composition containing a combination of such specific components, the preferred content of the inorganic filler, the epoxy resin, and the curing agent is as described above. Among them, the content of the inorganic filler is 30% by mass. It is preferable that the content of the epoxy resin is 3% by mass to 50% by mass, the content of the inorganic filler is 50% by mass to 90% by mass, and the content of the epoxy resin is 5% by mass to 45%. More preferably, it is mass%. Regarding the content of the curing agent, the ratio of the total number of epoxy groups of the epoxy resin to the total number of reactive groups of the curing agent is preferably in the range of 1: 0.2 to 1: 2, more preferably 1: It is contained so as to be in the range of 0.3 to 1: 1.5, more preferably in the range of 1: 0.4 to 1: 1.

  The resin composition may further contain additives such as a thermoplastic resin, a curing accelerator, a flame retardant, and rubber particles as necessary.

-Thermoplastic resin-
Examples of the thermoplastic resin include phenoxy resin, polyvinyl acetal resin, polyolefin resin, polybutadiene resin, polyimide resin, polyamideimide resin, polyethersulfone resin, polyphenylene ether resin, and polysulfone resin. A thermoplastic resin may be used individually by 1 type, or may use 2 or more types together.

  The weight average molecular weight in terms of polystyrene of the thermoplastic resin is preferably in the range of 8,000 to 70,000, more preferably in the range of 10,000 to 60,000, and still more preferably in the range of 20,000 to 60,000. The weight average molecular weight in terms of polystyrene of the thermoplastic resin is measured by a gel permeation chromatography (GPC) method. Specifically, the polystyrene-reduced weight average molecular weight of the thermoplastic resin is LC-9A / RID-6A manufactured by Shimadzu Corporation as a measuring device, and Shodex K-800P / K- manufactured by Showa Denko KK as a column. 804L / K-804L can be measured at a column temperature of 40 ° C. using chloroform or the like as a mobile phase, and can be calculated using a standard polystyrene calibration curve.

  Examples of the phenoxy resin include bisphenol A skeleton, bisphenol F skeleton, bisphenol S skeleton, bisphenolacetophenone skeleton, novolac skeleton, biphenyl skeleton, fluorene skeleton, dicyclopentadiene skeleton, norbornene skeleton, naphthalene skeleton, anthracene skeleton, adamantane skeleton, terpene Examples thereof include phenoxy resins having a skeleton and one or more skeletons selected from the group consisting of a trimethylcyclohexane skeleton. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. A phenoxy resin may be used individually by 1 type, or may use 2 or more types together. Specific examples of the phenoxy resin include “1256” and “4250” (both bisphenol A skeleton-containing phenoxy resin), “YX8100” (bisphenol S skeleton-containing phenoxy resin), and “YX6954” (manufactured by Mitsubishi Chemical Corporation). In addition, “FX280” and “FX293” manufactured by Toto Kasei Co., Ltd., “YL7553”, “YL6794”, “YL7213” manufactured by Mitsubishi Chemical Corporation, YL7290 "," YL7482 ", etc. are mentioned.

  Specific examples of the polyvinyl acetal resin include electric butyral 4000-2, 5000-A, 6000-C, and 6000-EP manufactured by Denki Kagaku Kogyo Co., Ltd., and ESREC BH series and BX series manufactured by Sekisui Chemical Co., Ltd. KS series, BL series, BM series, etc. are mentioned.

  Specific examples of the polyimide resin include “Rika Coat SN20” and “Rika Coat PN20” manufactured by Shin Nippon Rika Co., Ltd. Specific examples of the polyimide resin include linear polyimide obtained by reacting a bifunctional hydroxyl group-terminated polybutadiene, a diisocyanate compound and a tetrabasic acid anhydride (described in JP-A-2006-37083), a polysiloxane skeleton. Examples thereof include modified polyimides such as containing polyimide (described in JP-A No. 2002-12667 and JP-A No. 2000-319386).

  Specific examples of the polyamide-imide resin include “Bilomax HR11NN” and “Bilomax HR16NN” manufactured by Toyobo Co., Ltd. Specific examples of the polyamideimide resin also include modified polyamideimides such as polysiloxane skeleton-containing polyamideimides “KS9100” and “KS9300” manufactured by Hitachi Chemical Co., Ltd.

  Specific examples of the polyethersulfone resin include “PES5003P” manufactured by Sumitomo Chemical Co., Ltd.

  Specific examples of the polysulfone resin include polysulfone “P1700” and “P3500” manufactured by Solvay Advanced Polymers Co., Ltd.

  The content of the thermoplastic resin in the resin composition is preferably 0.1% by mass to 20% by mass. By setting the content of the thermoplastic resin within such a range, the viscosity of the resin composition becomes appropriate, and a uniform resin composition having a thickness and a bulk property can be formed. The content of the thermoplastic resin in the resin composition is more preferably 0.5% by mass to 10% by mass.

-Curing accelerator-
Examples of the curing accelerator include phosphorus-based curing accelerators, amine-based curing accelerators, imidazole-based curing accelerators, guanidine-based curing accelerators, phosphorus-based curing accelerators, amine-based curing accelerators, and imidazole-based accelerators. A curing accelerator is preferable, and an amine-based curing accelerator and an imidazole-based curing accelerator are more preferable.

  Examples of phosphorus curing accelerators include triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl) triphenylphosphonium thiocyanate. , Tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate and the like, and triphenylphosphine and tetrabutylphosphonium decanoate are preferable.

  Examples of amine curing accelerators include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6, -tris (dimethylaminomethyl) phenol, 1,8-diazabicyclo. (5,4,0) -undecene and the like are mentioned, and 4-dimethylaminopyridine and 1,8-diazabicyclo (5,4,0) -undecene are preferable.

  Examples of the imidazole curing accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl- 2 Phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino- 6- [2′-Methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl- 4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo [1,2-a] benzimidazole, 1-dodecyl-2-methyl Examples include imidazole compounds such as 3-benzylimidazolium chloride, 2-methylimidazoline, and 2-phenylimidazoline, and adducts of imidazole compounds and epoxy resins, such as 2-ethyl-4-methylimidazole and 1-benzyl-2-phenyl. Imidazole is preferred.

  Examples of the guanidine curing accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1- (o-tolyl) guanidine, dimethylguanidine, diphenylguanidine, trimethylguanidine, Tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo [4.4.0] dec-5-ene, 7-methyl-1,5,7-triazabicyclo [4.4.0] Deca-5-ene, 1-methyl biguanide, 1-ethyl biguanide, 1-n-butyl biguanide, 1-n-octadecyl biguanide, 1,1-dimethyl biguanide, 1,1-diethyl biguanide, 1-cyclohexyl biguanide, 1 -Allyl biguanide, 1-phenyl biguanide, 1- ( - tolyl) biguanide, and the like, dicyandiamide, 1,5,7-triazabicyclo [4.4.0] dec-5-ene are preferred.

  A hardening accelerator may be used individually by 1 type, and may be used in combination of 2 or more type. The content of the curing accelerator in the resin composition is preferably in the range of 0.05% by mass to 3% by mass when the total amount of nonvolatile components of the epoxy resin and the curing agent is 100% by mass.

-Flame retardant-
Examples of the flame retardant include an organic phosphorus flame retardant, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a silicone flame retardant, and a metal hydroxide. A flame retardant may be used individually by 1 type, or may use 2 or more types together. The content of the flame retardant in the resin composition layer is not particularly limited, but is preferably 0.5% by mass to 10% by mass, more preferably 1% by mass to 9% by mass, and 1.5% by mass to 8% by mass. Is more preferable.

-Rubber particles-
As the rubber particles, for example, those that do not dissolve in an organic solvent described later and are incompatible with the above-described epoxy resin, curing agent, thermoplastic resin, and the like are used. Such rubber particles are generally prepared by increasing the molecular weight of the rubber component to a level at which it does not dissolve in an organic solvent or resin and making it into particles.

  Examples of the rubber particles include core-shell type rubber particles, cross-linked acrylonitrile butadiene rubber particles, cross-linked styrene butadiene rubber particles, and acrylic rubber particles. The core-shell type rubber particles are rubber particles having a core layer and a shell layer. For example, a two-layer structure in which an outer shell layer is made of a glassy polymer and an inner core layer is made of a rubbery polymer, or Examples include a three-layer structure in which the outer shell layer is made of a glassy polymer, the intermediate layer is made of a rubbery polymer, and the core layer is made of a glassy polymer. The glassy polymer layer is made of, for example, methyl methacrylate polymer, and the rubbery polymer layer is made of, for example, butyl acrylate polymer (butyl rubber). A rubber particle may be used individually by 1 type, or may use 2 or more types together.

  The average particle size of the rubber particles is preferably in the range of 0.005 μm to 1 μm, more preferably in the range of 0.2 μm to 0.6 μm. The average particle diameter of the rubber particles can be measured using a dynamic light scattering method. For example, rubber particles are uniformly dispersed in an appropriate organic solvent by ultrasonic waves, etc., and a particle size distribution of rubber particles is created on a mass basis using a concentrated particle size analyzer (FPAR-1000; manufactured by Otsuka Electronics Co., Ltd.). And it can measure by making the median diameter into an average particle diameter. The content of the rubber particles in the resin composition is preferably 1% by mass to 10% by mass, and more preferably 2% by mass to 5% by mass.

  The resin composition used for the first thermosetting resin composition layer may contain other additives as necessary. Examples of such other additives include organic copper compounds and organic zinc. Examples thereof include organometallic compounds such as compounds and organic cobalt compounds, and resin additives such as organic fillers, thickeners, antifoaming agents, leveling agents, adhesion imparting agents, and coloring agents.

  The thickness of the first thermosetting resin composition layer is preferably 80 μm or less, more preferably 60 μm or less, still more preferably 40 μm or less, and even more preferably 30 μm or less, from the viewpoint of thinning the component-embedded substrate. . The lower limit of the thickness of the first thermosetting resin composition layer is not particularly limited, but is usually 10 μm or more.

  The minimum melt viscosity of the first thermosetting resin composition layer is preferably at least 100 poise, more preferably at least 300 poise, even more preferably from the viewpoint of layer shape retention (prevention of bleeding) during the production of a component-embedded substrate. Is over 500 poise. The upper limit of the minimum melt viscosity of the first thermosetting resin composition layer is not particularly limited, but is preferably 10000 poise or less, more preferably 8000 poise or less, still more preferably 6000 poise or less, and even more preferably 4000 poise or less. Especially preferably, it is 3000 poises or less.

  Here, the “minimum melt viscosity” of the thermosetting resin composition layer refers to the lowest viscosity exhibited by the thermosetting resin composition layer when the resin of the thermosetting resin composition layer is melted. Specifically, when the thermosetting resin composition layer is heated at a constant temperature increase rate to melt the resin, the initial stage of the melt viscosity decreases as the temperature increases, and thereafter, when a certain temperature is exceeded, the temperature increases. Increases melt viscosity. “Minimum melt viscosity” refers to the melt viscosity at such a minimum point. The minimum melt viscosity of the thermosetting resin composition layer can be measured by a dynamic viscoelastic method. Specifically, the minimum melt viscosity of the thermosetting resin composition layer is determined by performing dynamic viscoelasticity measurement under conditions of a measurement start temperature of 60 ° C., a temperature increase rate of 5 ° C./min, a frequency of 1 Hz, and a strain of 1 deg. Can be obtained. Examples of the dynamic viscoelasticity measuring apparatus include “Rheosol-G3000” manufactured by UBM Co., Ltd.

(Second adhesive film)
The second adhesive film includes a second support and a second thermosetting resin composition layer bonded to the second support.

  The material and thickness of the second support may be the same as described for the first support.

  The material of the second thermosetting resin composition layer may be the same as that described for the first thermosetting resin composition layer.

  The second thermosetting resin composition layer is configured from the viewpoint of reducing the thermal expansion coefficient of the obtained insulating layer and from suppressing the excessive displacement of the melt viscosity at the time of thermosetting and suppressing the positional deviation of the component. The content of the inorganic filler in the resin composition is preferably 30% by mass or more, more preferably 40% by mass or more, still more preferably 50% by mass or more, still more preferably 60% by mass or more, particularly Preferably they are 62 mass% or more, 64 mass% or more, or 66 mass% or more. In particular, it is preferably 50% by mass or more from the viewpoint of suppressing the positional deviation of the parts. The upper limit of the content of the inorganic filler in the resin composition is preferably 90% by mass or less, more preferably 85% by mass or less, from the viewpoint of mechanical strength and embedding property of the obtained insulating layer.

  The thickness of the second thermosetting resin composition layer is preferably 100 μm or less, more preferably 80 μm or less, still more preferably 60 μm or less, and even more preferably 50 μm or less, from the viewpoint of reducing the thickness of the component-embedded substrate. . The lower limit of the thickness of the second thermosetting resin composition layer is usually 15 μm or more from the viewpoint of component embedding property and cavity filling property, although it depends on the thickness of the insulating substrate.

  In a preferred embodiment, the second thermosetting resin composition layer is thicker than the first thermosetting resin composition layer.

  The minimum melt viscosity of the second thermosetting resin composition layer is preferably 10,000 poise or less, more preferably 8000 poise or less, from the viewpoint of realizing sufficient component embedding and cavity filling properties in the production of the component-embedded substrate. More preferably, it is 6000 poise or less, still more preferably 4000 poise or less, and particularly preferably 3000 poise or less. The lower limit of the minimum melt viscosity of the second thermosetting resin composition layer is preferably 100 poise or more, more preferably 300 poise or more, from the viewpoint of layer shape retention (prevention of bleeding) in the production of the component-embedded substrate. More preferably, it is 500 poise or more.

  Hereinafter, an example of a procedure for producing the first and second adhesive films is shown.

  Regardless of whether the adhesive film is a first adhesive film or a second adhesive film, for example, a resin varnish in which a resin composition is dissolved in an organic solvent is prepared, and this resin varnish is formed on a support using a die coater or the like. It can be produced by applying and drying the resin varnish.

  Examples of the organic solvent include ketones such as acetone, methyl ethyl ketone and cyclohexanone, acetates such as ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate and carbitol acetate, and carbitols such as cellosolve and butyl carbitol. And aromatic hydrocarbons such as toluene and xylene, amide solvents such as dimethylformamide, dimethylacetamide and N-methylpyrrolidone. An organic solvent may be used individually by 1 type, or may use 2 or more types together.

  The resin varnish may be dried by a known drying method such as heating or hot air blowing. Depending on the boiling point of the organic solvent in the resin varnish, for example, when a resin varnish containing 30% by mass to 60% by mass of the organic solvent is used, the support is obtained by drying at 50 ° C. to 150 ° C. for 3 minutes to 10 minutes. A thermosetting resin composition layer can be formed thereon.

  The adhesive film is a protective film on the surface of the thermosetting resin composition layer that is not joined to the support (that is, the surface opposite to the support), regardless of whether the first and second adhesive films are used. May further be included. The protective film contributes to the prevention of adhesion and scratches of dust on the surface of the thermosetting resin composition layer. As the material for the protective film, the same materials as described for the support may be used. Although the thickness of a protective film is not specifically limited, For example, they are 1 micrometer-40 micrometers. The adhesive film can be used by removing the protective film when manufacturing the component-embedded substrate.

  As mentioned above, although an example of the procedure which produces the 1st and 2nd adhesive film was shown, as long as the 1st and 2nd adhesive film is obtained, it is not limited to said procedure. For example, after forming a thermosetting resin composition layer on a protective film, a support may be laminated on the thermosetting resin composition layer to produce an adhesive film. In the present invention, the “support” means a member laminated on the main surface of the insulating substrate together with the thermosetting resin composition layer in the production of the component-embedded substrate, and supports the resin varnish during the production of the adhesive film. It does not represent the member in a limited way.

  Hereinafter, a method for manufacturing a component-embedded substrate according to the present invention will be described in detail according to a preferred embodiment.

[Manufacturing method of component embedded substrate]
The method for manufacturing a component-embedded substrate of the present invention includes the following steps (A), (B), (C), and (D) in this order.
(A) an insulating substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces, the first support and the first support; The first adhesive film including the first thermosetting resin composition layer to be bonded is vacuum-laminated such that the first thermosetting resin composition layer is bonded to the first main surface of the insulating substrate. Step (B) Step of Temporarily Attaching Parts to the First Thermosetting Resin Composition Layer in the Cavity (C) On the second main surface of the insulating substrate, the second support and the second support The second adhesive film including the second thermosetting resin composition layer to be bonded is vacuum-laminated so that the second thermosetting resin composition layer is bonded to the second main surface of the insulating substrate. A step of vacuum laminating under the condition that the heating temperature of the first adhesive film surface is lower than the heating temperature of the second adhesive film surface. ) And the first and second thermosetting resin composition layer was heat cured to form an insulating layer

In the present invention, “including in this order” for the steps (A) to (D) includes the steps (A) to (D) and includes the steps (A) to (D). As long as it is performed in this order, it does not prevent including other steps.
Hereinafter, the same applies to “include in this order” for the steps or processes.

  Hereinafter, each process will be described with reference to FIGS. 3A to 3G.

<Process (A)>
In the step (A), the first adhesive film 10 is bonded to the insulating substrate 1 ′ formed with the cavity so that the first thermosetting resin composition layer 12 is bonded to the first main surface of the insulating substrate. Vacuum lamination is performed (FIG. 3A).

  The configuration of the insulating substrate 1 ′ formed with the cavity 2 and the first adhesive film 10 is as described above.

  For example, the vacuum lamination of the first adhesive film 10 on the insulating substrate 1 ′ in which the cavity is formed is performed by, for example, insulating the first adhesive film 10 on which the cavity is formed from the first support 11 side under a reduced pressure condition. This can be done by thermocompression bonding to the substrate 1 ′. As a member (not shown; hereinafter, also referred to as “heat-bonding member”) for heat-pressing the first adhesive film 10 to the insulating substrate 1 ′ having the cavity, for example, a heated metal plate (SUS end plate) Etc.) or a metal roll (SUS roll). Instead of directly pressing the thermocompression bonding member on the first adhesive film 10, the first adhesive film 10 sufficiently follows the unevenness caused by the cavity 1a of the insulating substrate 1 ′ in which the cavity is formed. It is preferable to press through an elastic material such as heat-resistant rubber.

  The thermocompression bonding temperature is preferably in the range of 60 ° C to 160 ° C, more preferably 70 ° C to 140 ° C, further preferably 80 ° C to 130 ° C, and the thermocompression bonding pressure is preferably 0.098 MPa to 1.77 MPa, More preferably, it is in the range of 0.29 MPa to 1.47 MPa, more preferably 0.40 MPa to 1.10 MPa, and the thermocompression bonding time is preferably 10 seconds to 400 seconds, more preferably 20 seconds to 300 seconds, even more preferably. Is in the range of 20 seconds to 200 seconds. The vacuum lamination is preferably performed under a reduced pressure condition of a pressure of 26.7 hPa or less. Note that the thermocompression bonding temperature refers to the surface temperature of the thermocompression bonding member, and in the case of pressing through an elastic material such as heat-resistant rubber, it refers to the temperature of the surface of the elastic material joined to the first adhesive film.

  Vacuum lamination can be performed with a commercially available vacuum laminator. Examples of the commercially available vacuum laminator include a vacuum pressure laminator manufactured by Meiki Seisakusho, a vacuum applicator manufactured by Nichigo Morton, and the like.

  In the step (A), the first thermosetting resin composition layer 12 is bonded to the first main surface of the insulating substrate 1 ′ in which the cavity is formed (FIG. 3B). At that time, the first thermosetting resin composition layer 12 is also filled in a partial region in the cavity 1a of the insulating substrate (FIG. 3B). Hereinafter, the region in the cavity 1a filled with the first thermosetting resin composition layer 12 is referred to as “resin-filled region”, and the region in the cavity 1a other than the resin-filled region (that is, the first thermosetting). The region in the cavity 1a that is not filled with the conductive resin composition layer 12) is referred to as “non-resin filled region”.

In step (A), the height h _A of the cavity of the insulating substrate before vacuum-laminating the first adhesive film (FIG. 3A) and the non-resin of the cavity of the insulating substrate after vacuum-laminating the first adhesive film The height h _B (FIG. 3B) of the filling region preferably satisfies the relationship of 0.8 h _A ≦ h _B ≦ h _A , and more preferably satisfies the relationship of 0.85 h _A ≦ h _B ≦ h _A 0.90h _A ≦ h _B ≦ h _A is more preferable, and 0.95 h _A ≦ h _B ≦ h _A is particularly preferable. In the case of h _B <0.8h _A , the resin in the resin-filled region tends to move when the component is installed in step (B) described later, and it tends to be difficult to temporarily attach the component to a desired position. . Further, the component protrudes out of the cavity, and pressure is concentrated on the component in step (C) to be described later, and the component is liable to be displaced. By satisfying the above relationship between h _A and h _B, it is possible to secure a sufficient space for incorporating components even when a thin insulating substrate is used, and to effectively suppress misalignment of components. Can do.

  In the step (A), when the first adhesive film and the insulating substrate on which the cavity is formed are vacuum-laminated, a protective film may be provided on the second main surface of the insulating substrate on which the cavity is formed. As the protective film, a film-like tacking material that has been used for tacking parts in the prior art may be used, and examples thereof include UC series (UV tape for wafer dicing) manufactured by Furukawa Electric Co., Ltd. . When the protective film is provided on the second main surface of the insulating substrate in which the cavity is formed, the substrate may be used in the step (B) by peeling the protective film after the step (A).

  The first support may be peeled off before the step of providing the conductor layer (circuit wiring) on the insulating layer obtained by curing the first thermosetting resin composition layer. It may peel between (C) and a process (D), and may peel after a process (D) mentioned below. In a preferred embodiment, the first support is peeled off after the step (D) described later. When a metal foil such as a copper foil is used as the first support, it is possible to provide a conductor layer (circuit wiring) using such a metal foil as described later. The support may not be peeled off.

<Process (B)>
In the step (B), the part 3 is temporarily attached to the first thermosetting resin composition layer 12 in the cavity 1a (FIG. 3C). That is, the component 3 is temporarily attached to the first thermosetting resin composition layer 12 exposed in the cavity 1a.

  As the component 3, an appropriate electrical component may be selected according to desired characteristics, and examples thereof include passive components such as capacitors, inductors, resistors, and active components such as semiconductor bare chips. The same part 3 may be used for all the cavities, or a different part 3 may be used for each cavity.

  As described above, in the method of tacking a part using a tacking material that will be peeled and removed in a later process, the part is dropped or removed when the tacking material is peeled and removed. In order to prevent misalignment, a thermosetting resin composition layer is provided on the main surface opposite to the main surface on which the tacking material is provided, and the cavity is filled with the thermosetting resin composition, and then the heat is applied. The curable resin composition is thermally cured to form a cured body (insulating layer). However, in such a method, when using an insulating substrate with a high cavity density or a thin insulating substrate to achieve miniaturization and thinning of the component-embedded substrate, insulation is performed on one main surface of the insulating substrate. At the stage of forming the layer, the substrate may be warped. On the other hand, in this invention, components are temporarily attached to the thermosetting resin composition layer which becomes an insulating layer later. Therefore, in the present invention, it is not necessary to peel and remove the tacking material, and it is possible to advantageously solve the problem of substrate warpage associated with peeling and removing the tacking material.

  In the step (B), the component is held by the first thermosetting resin composition layer due to the surface tackiness of the first thermosetting resin composition layer in the cavity. From the viewpoint of the tackiness of the surface of the first thermosetting resin composition layer, the step (B) is preferably performed under heating conditions. Examples of the heating method include a method in which a heating member is bonded to the first support and heated. The heating member may be directly joined to the first support, or may be joined to the first support via an elastic material such as the heat-resistant rubber described above.

  The heating conditions in the step (B) are not particularly limited as long as the surface of the first thermosetting resin composition layer in the cavity can exhibit sufficient tackiness. In a preferred embodiment, the heating temperature in the step (B) is preferably 60 ° C. or higher, more preferably 70 ° C. or higher, further preferably 80 ° C., from the viewpoint of the adhesiveness of the first thermosetting resin composition layer. More than 90 degreeC, More preferably, it is 90 degreeC or more. The upper limit of the heating temperature is preferably 140 ° C. or less, more preferably 135 ° C. or less, and still more preferably 130 ° C. or less, from the viewpoint of preventing and suppressing substrate warpage resulting from the curing of the first thermosetting resin composition layer. It is. The heating temperature in the step (B) refers to the surface temperature of the heating member when the heating member is used for heating from the first support side.

  The heating time in the step (B) may be a time sufficient for temporarily attaching the part, and is preferably 2 seconds or more, more preferably 3 seconds or more, and further preferably 4 seconds or more. The upper limit of the heating time can usually be 60 seconds or less.

  The heat treatment in the step (B) is preferably performed under atmospheric pressure (normal pressure).

  In a preferred embodiment, the warpage of the substrate obtained in the step (B) is preferably 25 mm or less, more preferably 20 mm or less, further preferably 15 mm or less, even more preferably 10 mm or less, and particularly preferably 5 mm or less. Note that the warpage of the substrate means both ends of the opposite side of the substrate from the virtual vertical plane when one side of the substrate obtained in the step (B) is fixed with a fixture and suspended perpendicular to the ground (horizontal plane). Means the arithmetic average value of the vertical height of Specifically, the warpage of the substrate can be measured by the measuring method described in the examples.

  After the step (B), the first thermosetting resin composition layer may be further heated. Thereby, the position shift of the component in the process (C) mentioned later can be suppressed further. Therefore, in a preferred embodiment, the method for producing a component-embedded substrate of the present invention includes (B ′) a step of heating the first thermosetting resin composition layer between the step (B) and the step (C). including.

  The heating temperature in the step (B ′) is preferably 80 ° C. or higher, more preferably 90 ° C. or higher, and further preferably 100 ° C. or higher, from the viewpoint of suppressing the positional deviation of the components in the step (C). The upper limit of the heating temperature is preferably less than 150 ° C., more preferably 140 ° C. or less, and further preferably 130 ° C. or less, from the viewpoint of preventing and suppressing substrate warpage caused by curing of the first thermosetting resin composition layer. Even more preferably, it is 120 ° C. or lower.

  The heating time in the step (B ′) is preferably 30 seconds or longer, more preferably 1 minute or longer, further preferably 3 minutes or longer, and even more preferably 5 from the viewpoint of suppressing the positional deviation of the parts in the step (C). More than 10 minutes, more than 10 minutes or more than 20 minutes. The upper limit of the heating time can usually be 60 minutes or less from the viewpoint of preventing and suppressing substrate warpage caused by curing of the first thermosetting resin composition layer.

  The heat treatment in step (B ′) is preferably performed under atmospheric pressure (normal pressure).

  When the step (B) is carried out under heating conditions, after the step (B), the step (B ′) may be performed as it is, or the substrate is cooled to room temperature (room temperature) and then the step (B ′). You may move to.

<Process (C)>
In the step (C), the second adhesive film 20 is bonded to the second main surface of the insulating substrate such that the second thermosetting resin composition layer 22 is bonded to the second main surface of the insulating substrate. Vacuum stacking is performed (FIG. 3D).

  In the step (C), the second thermosetting resin composition layer 22 is filled in the cavity 1a, and the part 3 temporarily attached in the cavity 1a is replaced with the second thermosetting resin composition layer. 22 (FIG. 3E).

  From the viewpoint of suppressing the positional deviation of the parts, it is important that the step (C) is performed under the condition that the heating temperature of the first adhesive film surface is lower than the heating temperature of the second adhesive film surface.

When the heating temperature of the surface of the first adhesive film is T ₁ (° C.) and the heating temperature of the surface of the second adhesive film is T ₂ (° C.), T ₁ and T ₂ are aspects that suppress the positional deviation of the components. From this, it is preferable that T ₂ −40 ≦ T ₁ ≦ T ₂ −10, more preferably T ₂ −40 ≦ T ₁ ≦ T ₂ −15, and still more preferably T ₂ −35 ≦ T ₁ ≦ T _2. It is preferable to satisfy the relationship of −15, and more preferably satisfy the relationship of T ₂ −35 ≦ T ₁ ≦ T ₂ −20.

Heating temperature T ₂ of the second adhesive film surface, from the viewpoint of realizing the embeddability and cavity filling of sufficient components, preferably 120 ° C. or higher, more preferably 125 ° C. or higher, more preferably 130 ° C. or higher, 135 It is ℃ or higher, 140 ℃ or higher, or 145 ℃ or higher. The upper limit of T ₂ is preferably 200 ° C. or less, more preferably 180 ° C. or less, from the viewpoint of suppressing the positional deviation of components.

The heating temperature T _{1 on the} surface of the first adhesive film is not particularly limited as long as T ₁ and T ₂ satisfy the above relationship, but is preferably less than 140 ° C., more preferably 135 from the viewpoint of suppressing the positional deviation of the parts. ° C or lower, more preferably 130 ° C or lower, particularly preferably 125 ° C or lower, 120 ° C or lower, or 115 ° C or lower. The lower limit of T ₁ is the T ₁ and T ₂ are not particularly limited as long as it satisfies the above relationship, usually, it may be a 60 ° C. or higher.

In the present invention, the heating temperature T ₁ (° C.) of the first adhesive film surface refers to the surface temperature of the thermocompression bonding member bonded to the first adhesive film surface, and is pressed through an elastic material such as heat-resistant rubber. In the case, it means the temperature of the surface of the elastic material to be bonded to the first adhesive film. In addition, the heating temperature T ₂ (° C.) of the second adhesive film surface refers to the surface temperature of the thermocompression bonding member bonded to the second adhesive film surface, and in the case of pressing through an elastic material such as heat-resistant rubber. The temperature of the surface of the elastic material to be bonded to the second adhesive film.

  The vacuum lamination of the second adhesive film 20 in the step (C) may employ the same method and conditions as the vacuum lamination of the first adhesive film in the step (A) except for the above temperature conditions. In addition, from the viewpoint of suppressing the generation of voids, the evacuation time in the step (C) is preferably 20 seconds or longer, more preferably 30 seconds or longer, 40 seconds or longer, 50 seconds or longer, or 60 seconds or longer. In particular, when the elapsed time from the execution of the step (A) to the execution of the step (C) is long, the evacuation time in the step (C) is long (for example, 30 seconds or more, 40 seconds or more, 50 (Seconds or more or 60 seconds or more), it is possible to effectively suppress the generation of voids in the insulating layer.

In the step (C), the melt viscosity of the first thermosetting resin composition layer is preferably 2000 poises or more, more preferably 3000 poises or more, and further preferably 4000 poises or more, from the viewpoint of suppressing positional deviation of the parts. Even more preferably, it is preferably maintained at 5000 poise or more, particularly preferably 6000 poise or more, 7000 poise or more, 8000 poise or more, 9000 poise or more, or 10,000 poise or more. By adopting the above temperature conditions, the melt viscosity of the first thermosetting resin composition layer can be increased while realizing sufficient component embedding and cavity filling properties by the second thermosetting resin composition layer. Such a range can be maintained. Although the upper limit of the melt viscosity of the 1st thermosetting resin composition layer in a process (C) is not specifically limited, Usually, it is 1000000 poises or less.
The melt viscosity of the first thermosetting resin composition layer in the step (C) can be obtained by performing dynamic viscoelasticity measurement at a temperature T ₁ (° C.). The measuring apparatus that can be used for the measurement is as described above.

  The configuration of the second adhesive film 20 is as described above. In addition, the 2nd support body 21 of the 2nd adhesive film 20 used at a process (C) may be the same as the 1st support body 11 of the 1st adhesive film 10 used at a process (A), and is different. Also good.

  Moreover, the resin composition used for the second thermosetting resin composition layer may be the same as or different from the resin composition used for the first thermosetting resin composition layer.

  According to the manufacturing method of the present invention in which a thermosetting resin composition layer (that is, a first thermosetting resin composition layer) to be an insulating layer later is used as a component tacking material, the component-embedded substrate can be reduced in size. Even when an insulating substrate having a high cavity density or an insulating substrate having a small thickness is used to achieve a reduction in thickness and thickness, the occurrence of substrate warpage can be suppressed. Therefore, the step (C) can be carried out smoothly without hindering the substrate transfer from the step (B) to the step (C). Furthermore, in the present invention in which the step (C) is performed under the above specific temperature condition, the component misalignment associated with the vacuum lamination in the step (C) can be suppressed, and the component built-in excellent in component placement accuracy. A substrate can be realized with a high yield.

  After step (C), under normal pressure (atmospheric pressure), for example, the thermocompression bonding member is pressed from the second support 22 side or from both sides of the first support 12 side and the second support 22 side. Thus, it is preferable to perform a step of smoothing both surfaces of the laminated first adhesive film side and the second adhesive film side (hereinafter also referred to as “step (C ′)”). Therefore, in a preferred embodiment, the method for manufacturing a component-embedded substrate of the present invention is configured so that both the first adhesive film side and the second adhesive film side are applied by a hot press between the steps (C) and (D). Including a step of smoothing. The pressing conditions in the step (C ′) can be the same conditions as the thermocompression bonding conditions in the step (C).

  Step (C ′) can be performed by a commercially available laminator. In addition, you may perform a process (C) and a process (C ') continuously using said commercially available vacuum laminator.

  In a preferred embodiment, in the step (C) (and step (C ′)), the positional deviation of the component is less than 40 μm. Here, the misalignment of the components refers to the center of the component when temporarily attached to the first thermosetting resin composition layer in the step (B) and the second thermosetting resin composition in the step (C). This refers to a change in position with respect to the center of the component after the layers are vacuum-laminated (when the step (C ′) is performed, after the smoothing process). Specifically, the positional deviation of the components can be measured by the measuring method described in the examples.

  In addition, the 2nd support body 21 should just peel before the process of providing a conductor layer (circuit wiring) in the insulating layer obtained by hardening a 2nd thermosetting resin composition layer, for example, a process ( C) may be peeled off between step (D) described later and may be peeled off after step (D) described later. In a preferred embodiment, the second support is peeled off after the step (D) described later. When a metal foil such as a copper foil is used as the second support, it is possible to provide a conductor layer (circuit wiring) using such a metal foil, as will be described later. The support may not be peeled off.

<Process (D)>
In the step (D), the first and second thermosetting resin composition layers are thermoset to form an insulating layer. Thereby, the 1st thermosetting resin composition layer 12 forms insulating layer 12 ', and the 2nd thermosetting resin composition layer 22 forms insulating layer 22', respectively (FIG. 3F).

  The conditions for thermosetting are not particularly limited, and the conditions normally employed when forming the insulating layer of the printed wiring board may be used.

  For example, the thermosetting conditions of the first and second thermosetting resin composition layers vary depending on the composition of the resin composition used for each thermosetting resin composition layer, but the curing temperature is 120 ° C to 240 ° C. (Preferably in the range of 150 ° C. to 210 ° C., more preferably in the range of 170 ° C. to 190 ° C.), and the curing time is in the range of 5 minutes to 90 minutes (preferably 10 minutes to 75 minutes, more preferably 15 minutes to 60 minutes).

  Before thermosetting, the first and second thermosetting resin composition layers may be preheated at a temperature lower than the curing temperature. For example, the first and second thermosetting resin compositions at a temperature of 50 ° C. or higher and lower than 120 ° C. (preferably 60 ° C. or higher and 110 ° C. or lower, more preferably 70 ° C. or higher and 100 ° C. or lower) prior to thermosetting. The layer may be preheated for 5 minutes or longer (preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes). When preheating is performed, such preheating is also included in the step (D).

  The thermosetting of the first and second thermosetting resin composition layers in the step (D) is preferably performed under atmospheric pressure (under normal pressure).

  The step (D) is preferably performed with the substrate kept substantially horizontal. For example, the step (D) is preferably performed in a state where the axis in the thickness direction of the substrate is in a range of 80 ° to 100 ° with respect to the horizontal plane.

  As described above, the first and second supports are preferably peeled off after the step (D). Therefore, in the step (D), it is preferable to thermoset the first and second thermosetting resin composition layers with the first and second supports attached. Thereby, an insulating layer having a low roughness surface can be obtained.

  In a preferred embodiment, a process of cooling the insulating substrate to room temperature (room temperature) may be performed between step (C) and step (D).

  In the following description, the insulating layer 12 ′ obtained by thermosetting the first thermosetting resin composition layer 12 may be referred to as a “first insulating layer”. Further, the insulating layer 22 ′ obtained by thermosetting the second thermosetting resin composition layer 22 may be referred to as a “second insulating layer”. Further, the substrate obtained in the step (D) may be referred to as “component built-in insulating substrate”.

<Other processes>
The method for manufacturing a component-embedded substrate of the present invention may further include (E) a step of forming a through hole, and (F) a step of forming a conductor layer on the insulating layer. These steps (E) and (F) may be carried out according to various methods known to those skilled in the art that are used in the production of printed wiring boards. In addition, when peeling a 1st and 2nd support body after a process (D), peeling of this 1st and 2nd support body is between a process (D) and a process (E), or a process ( You may implement between E) and a process (F).

  Step (E) is a step of forming a through hole. The through-hole is provided for electrical connection on both sides of the component-embedded substrate, and can be formed by a known method using a drill, laser, plasma, or the like in consideration of the characteristics of the insulating layer and the insulating substrate.

  From the viewpoint of protecting the surface of the insulating layer during the formation of the through hole, the step (E) is preferably performed before peeling off the first and second supports. In such a case, for example, a through hole can be formed by irradiating a laser beam on the support. Further, for the purpose of improving laser processability, a support containing a laser absorbing material suitable for the wavelength of the laser to be used may be used. The opening diameter and shape of the through hole may be appropriately determined according to the circuit wiring design.

  When forming a through hole with a laser, examples of the laser light source include a carbon dioxide laser, a YAG laser, and an excimer laser. Among these, a carbon dioxide laser is preferable from the viewpoint of processing speed and cost.

  Step (F) is a step of forming a conductor layer on the insulating layer.

  The conductor material used for the conductor layer is not particularly limited. In a preferred embodiment, the conductor layer is one or more selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium. Contains metal. The conductor layer may be a single metal layer or an alloy layer. As the alloy layer, for example, an alloy of two or more metals selected from the above group (for example, nickel-chromium alloy, copper- A layer formed from a nickel alloy and a copper / titanium alloy). Among them, from the viewpoint of versatility of conductor layer formation, cost, ease of patterning, etc., single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper, or nickel / chromium alloy, copper / An alloy layer of nickel alloy or copper / titanium alloy is preferable, and a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper, or an alloy layer of nickel / chromium alloy is more preferable, and a single layer of copper is preferable. A metal layer is more preferred.

  The conductor layer may have a single layer structure or a multilayer structure in which two or more single metal layers or alloy layers made of different types of metals or alloys are laminated. When the conductor layer has a multilayer structure, the layer in contact with the insulating layer is preferably a single metal layer of chromium, zinc or titanium, or an alloy layer of nickel / chromium alloy.

  The thickness of the conductor layer depends on the design of the desired component-embedded substrate, but is generally 3 μm to 35 μm, preferably 5 μm to 30 μm.

In one embodiment, step (F) comprises
Roughening the insulating layer, and forming a conductor layer on the roughened insulating layer by plating.

  The procedure and conditions for the roughening treatment are not particularly limited, and known procedures and conditions that are usually used in the production of printed wiring boards can be employed. For example, the first and second insulating layers can be roughened by performing a swelling process with a swelling liquid, a roughening process with an oxidizing agent, and a neutralization process with a neutralizing liquid in this order. Although it does not specifically limit as a swelling liquid, An alkaline solution, surfactant solution, etc. are mentioned, Preferably it is an alkaline solution, As this alkaline solution, a sodium hydroxide solution and a potassium hydroxide solution are more preferable. Examples of commercially available swelling liquids include Swelling Dip Securigans P and Swelling Dip Securigans SBU manufactured by Atotech Japan. Although the swelling process by a swelling liquid is not specifically limited, For example, it can carry out by immersing a 1st and 2nd insulating layer for 1 minute-20 minutes in 30-90 degreeC swelling liquid. From the viewpoint of suppressing the swelling of the resin of the first and second insulating layers to an appropriate level, it is preferable to immerse the first and second insulating layers in a swelling liquid at 40 to 80 ° C. for 5 seconds to 15 minutes. Although it does not specifically limit as an oxidizing agent, For example, the alkaline permanganate solution which melt | dissolved potassium permanganate and sodium permanganate in the aqueous solution of sodium hydroxide is mentioned. The roughening treatment with an oxidizing agent such as an alkaline permanganic acid solution is preferably performed by immersing the first and second insulating layers in an oxidizing agent solution heated to 60 to 80 ° C. for 10 to 30 minutes. The concentration of permanganate in the alkaline permanganate solution is preferably 5% by mass to 10% by mass. Examples of commercially available oxidizing agents include alkaline permanganate solutions such as concentrate compact CP and dosing solution securigans P manufactured by Atotech Japan. As the neutralizing solution, an acidic aqueous solution is preferable, and as a commercially available product, for example, Reduction Sholysin Securigant P manufactured by Atotech Japan Co., Ltd. may be mentioned. The treatment with the neutralizing solution can be performed by immersing the treated surface subjected to the roughening treatment with the oxidant solution in the neutralizing solution at 30 to 80 ° C. for 5 to 30 minutes. From the viewpoint of workability and the like, a method of immersing an object subjected to roughening treatment with an oxidant solution in a neutralizing solution at 40 to 70 ° C. for 5 to 20 minutes is preferable.

  The method for forming the conductor layer is not particularly limited as long as a conductor layer (circuit wiring) having a desired pattern can be formed. For example, the surface of the first and second insulating layers can be plated by a conventionally known technique such as a semi-additive method or a full additive method to form a conductor layer (circuit wiring) having a desired pattern. Hereinafter, an example in which the conductor layer is formed by a semi-additive method will be described.

  First, a plating seed layer is formed on the surfaces of the first and second insulating layers by electroless plating. Next, a mask pattern that exposes a part of the plating seed layer corresponding to a desired wiring pattern is formed on the formed plating seed layer. A metal layer is formed by electrolytic plating on the exposed plating seed layer, and then the mask pattern is removed. Thereafter, an unnecessary plating seed layer can be removed by etching or the like to form a conductor layer having a desired pattern.

  When metal foil such as copper foil is used as the first and second supports, the conductor layer may be formed by a subtractive method using this metal foil. Alternatively, the conductive layer may be formed by electrolytic plating using a metal foil as a plating seed layer.

  Through these steps, a conductor (wiring) is also formed in the through hole, and the circuit wiring 4 provided on the surface of the first insulating layer 12 '' and the circuit provided on the surface of the second insulating layer 22 ''. The wiring 4 is electrically connected to obtain the component built-in substrate 100 (FIG. 3G). As long as electrical connection is provided on both sides of the component-embedded substrate, the inside of the through hole need not be filled with a conductor, and a thin layer of conductor may be formed so as to coat the wall surface of the through hole. Note that the electrical connection between the component 3 and the circuit wiring on the surface of the board is generally made via via wiring. The via wiring can be formed by any conventionally known method when manufacturing a printed wiring board. For example, the via wiring can be formed by forming the via hole by the same method as in the step (E) and then performing the step (F).

  In the method for manufacturing a component-embedded substrate of the present invention, a fine conductor (wiring) can be formed on an insulating layer having a low surface roughness by plating (the surface roughness value will be described later). Combined with the incorporation of components in an insulating substrate, the present invention enables fine wiring while increasing the amount of components mounted, and is significantly more functional and compact than conventional two-layer wiring substrates. A two-layer wiring board (hereinafter also referred to as “component built-in two-layer wiring board”) can be realized.

  The method for manufacturing a component built-in substrate of the present invention may also include a step (G) of dividing the component built-in substrate into individual pieces.

  In the step (G), for example, the structure obtained by grinding with a conventionally known dicing apparatus having a rotary blade can be separated into individual component-embedded substrate units.

  As mentioned above, although the manufacturing method of the component built-in board | substrate of this invention was demonstrated according to suitable embodiment which manufactures a component built-in two-layer wiring board, it includes each process of the said process (A) thru | or (D), and a process. As long as the steps (A) to (D) are performed in this order, the present invention is not limited to the embodiment specifically shown above. For example, after performing steps (A) to (D), a step of forming a conductor layer (that is, step (F) above) and a step of forming an insulating layer are repeated to obtain a component-embedded substrate having a multilayer wiring. It may be manufactured. The step of forming the insulating layer may be carried out according to any conventionally known method in the production of a printed wiring board, and may be carried out, for example, by the same method as the above steps (C) and (D). Further, the step (G) may be performed between the step (C) and the step (D), between the step (D) and the step (E), or between the step (E) and the step (F). Many variations of the method for manufacturing a component-embedded substrate of the present invention are conceivable.

[Insulated substrate with built-in components]
Conventionally, a component-embedded substrate is generally formed by incorporating a component in an inner layer circuit board. On the other hand, in the present invention, as described above, a component-embedded substrate is manufactured by incorporating a component in an insulating substrate. Hereinafter, the component built-in insulating substrate obtained in the step (D) in the method of the present invention will be described.

Insulated board with built-in components
An insulating substrate having first and second main surfaces and having a cavity formed between the first and second main surfaces;
A first insulating layer bonded to the first main surface of the insulating substrate;
A second insulating layer bonded to the second main surface of the insulating substrate;
A component provided on the first insulating layer so as to be accommodated inside the cavity of the insulating substrate,
The second insulating layer fills the cavity of the insulating substrate so as to embed the component.

  The insulating substrate in which the cavity is formed, the thermosetting resin composition for forming the first and second insulating layers, and the parts are as described above.

  The first insulating layer and the second insulating layer may have different compositions or the same composition. In the case where the first insulating layer and the second insulating layer have the same composition, the first insulating layer and the second insulating layer may be continuously integrated without showing a clear interface.

  The thickness of the component-embedded insulating substrate is preferably thinner from the viewpoint of reducing the thickness of the component-embedded substrate, preferably 400 μm or less, more preferably 300 μm or less, still more preferably 200 μm or less, even more preferably 150 μm or less, Particularly preferably, it is 100 μm or less. The lower limit of the thickness of the component-embedded insulating substrate is not particularly limited, but can generally be 30 μm or more, 50 μm or more, or 80 μm or more.

  In the component-embedded insulating substrate, the pitch between the components corresponds to the pitch between the cavities described above. Specifically, the pitch between components in the component-embedded insulating substrate is preferably 10 mm or less, more preferably 9 mm or less, still more preferably 8 mm or less, even more preferably 7 mm or less, and particularly preferably 6 mm or less. The lower limit of the pitch between parts is usually 1 mm or more, 2 mm or more, and the like. The pitch between components does not need to be the same across the component-embedded insulating substrate, and may be different.

  By forming through-holes and conductor layers in the component-embedded insulating substrate, a component-embedded substrate such as a component-embedded two-layer wiring substrate can be manufactured.

From the viewpoint of fine wiring, the component-embedded insulating substrate preferably has an arithmetic average roughness Ra of the surface after the roughening treatment of 350 nm or less, more preferably 300 nm or less, and more preferably 250 nm or less. More preferably, it is still more preferably 200 nm or less, and particularly preferably 180 nm or less, 160 nm or less, 140 nm or less, 120 nm or less, 100 nm or less, or 80 nm or less. The lower limit value of the arithmetic average roughness Ra is not particularly limited, and is 20 nm, 40 nm, or the like.
The arithmetic average roughness Ra can be measured using a non-contact type surface roughness meter. As a specific example of the non-contact type surface roughness meter, “WYKO NT3300” manufactured by Bee Coins Instruments can be cited.

[Component built-in two-layer wiring board]
In the method for manufacturing a component built-in board of the present invention, a component built-in two-layer wiring board can be suitably manufactured.

In one embodiment, the component built-in two-layer wiring board is:
First and second conductor layers;
A component-embedded insulating substrate that is bonded to the first and second conductor layers and provided between the first and second conductor layers;
An interlayer connection body for electrically connecting the first and second conductor layers;
including.

  The conductor layer and the component-embedded insulating substrate are as described above.

  The interlayer connection body is not particularly limited as long as the first and second conductor layers can be electrically connected. For example, a connection body formed by filling a conductor in a through hole, a thin conductor on the wall surface of the through hole. Examples include a connection body formed by coating a layer.

  In the method for manufacturing a component-embedded substrate of the present invention, the conductor layer is formed by plating on the insulating layer having a low surface roughness, so that a component-embedded two-layer wiring substrate having fine wiring can be obtained. For example, a component-embedded two-layer wiring board having fine wiring with a line / space ratio (L / S ratio) of preferably 50/50 μm or less, more preferably 40/40 μm or less, and even more preferably 30/30 μm or less is obtained with high yield. In addition, even a component-embedded two-layer wiring board having fine wiring with an L / S ratio of 20/20 μm or less, 10/10 μm or less, or 7/7 μm or less can be formed with high yield.

[Semiconductor device]
A semiconductor device can be manufactured using the component-embedded substrate manufactured by the method of the present invention.

  Examples of such semiconductor devices include various semiconductor devices used for electrical products (for example, computers, mobile phones, digital cameras, and televisions) and vehicles (for example, motorcycles, automobiles, trains, ships, and aircrafts). .

  EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples. In the following description, “parts” and “%” mean “parts by mass” and “% by mass”, respectively, unless otherwise specified.

  First, various measurement methods and evaluation methods will be described.

[Preparation of samples for measurement and evaluation]
(1) Preparation of an insulating substrate having a cavity formed on a 340 mm × 510 mm size insulating substrate having a 0.8 mm × 1.2 mm size cavity penetrating between the first and second main surfaces of the insulating substrate at a pitch of 5 mm It was made with. As an insulating substrate, glass fiber base epoxy resin double-sided copper-clad laminate (thickness of copper foil on one side: 12 μm, thickness of substrate (glass fiber base material-epoxy resin-based cured prepreg) (= cavity height h _A ) 100 μm, total thickness 124 μm, substrate thermal expansion coefficient 7 ppm, substrate glass transition temperature 230 ° C., Mitsubishi Gas Chemical Co., Ltd. “832 NSR-LC”) were used after removing all double-sided copper foil. The obtained substrate is referred to as “substrate a”.

(2) Vacuum lamination of first adhesive film The protective film was peeled off from the first adhesive film produced in the following production example. Then, the 1st thermosetting resin composition layer is the 1st thermosetting resin composition layer of the insulating substrate, using a batch type vacuum pressurization laminator ("MVLP-500" manufactured by Meiki Seisakusho Co., Ltd.). The substrate a was vacuum laminated so as to be in contact with the main surface. In the vacuum lamination of the first adhesive film, after reducing the pressure for 30 seconds (that is, evacuation time of 30 seconds) to reduce the atmospheric pressure to 13 hPa or less, the temperature shown in the following Table 2 (“Step (A)”), pressure 0. Lamination was performed by thermocompression bonding via heat resistant rubber from the first support at 5 MPa for 30 seconds. The obtained substrate is referred to as “substrate b”.

(3) Temporary attachment of component Then, under the conditions shown in Table 2 ("Step (B)"), the component (multilayer thin film capacitor manufactured by Murata Manufacturing Co., Ltd.) is formed on the first thermosetting resin composition layer in the cavity. 1005, 1.0 mm × 0.5 mm size, thickness 180 μm).
For Examples 3 and 4, after the parts were temporarily attached, the first thermosetting resin composition layer was further heat-treated under the conditions shown in Table 2 (“Step (B ′)”).
The obtained substrate is referred to as “substrate c”.

(4) Vacuum lamination of second adhesive film The protective film was peeled from the second adhesive film produced in the following production example. Then, using a batch-type vacuum pressure laminator ("MVLP-500" manufactured by Meiki Seisakusho Co., Ltd.), the second adhesive film is used as the second thermosetting resin composition layer as the second insulating substrate. The substrate c was vacuum laminated so as to be in contact with the main surface. In the vacuum lamination of the second adhesive film, after reducing the pressure for 30 seconds (that is, the vacuuming time of 30 seconds) to reduce the atmospheric pressure to 13 hPa or less, the heating temperature (T ₁ ) of the _first adhesive film surface and the second adhesion The heating temperature (T ₂ ) on the film surface was set to the value shown in Table 2 below (“Step (C)”), and laminate treatment was performed by thermocompression bonding with heat-resistant rubber at a pressure of 0.74 MPa for 30 seconds. .
Furthermore, the both surfaces of the substrate were smoothed by heating and pressing with a SUS end plate at normal pressure and pressure of 0.5 MPa for 60 seconds. The temperature condition of the smoothing treatment was the same as the lamination treatment condition. The obtained substrate is referred to as “substrate d”.

(5) Thermosetting of 1st and 2nd thermosetting resin composition layer The support body derived from the 1st and 2nd adhesive film was peeled from the board | substrate c. Thereafter, the substrate d was heated under normal pressure at 100 ° C. for 30 minutes and then at 180 ° C. for 30 minutes to thermally cure the first and second thermosetting resin composition layers. Thermal curing was performed with the substrate in a horizontal state. This formed the insulating layer on both surfaces of the insulating substrate.

<Measurement of height (h _B ) of non-resin filled region of cavity>
The height (h _B ) of the non-resin-filled region of the cavity was measured for the substrate b using a microscope (“VH-5500” manufactured by Keyence).

<Measurement of melt viscosity of first thermosetting resin composition layer in vacuum lamination step of second adhesive film>
About the 1st thermosetting resin composition layer in the 1st adhesive film produced by the following preparation examples, a dynamic viscoelasticity measuring apparatus ("Rhesol-G3000" by UBM Co., Ltd.) was used. The melt viscosity was measured. About 1 g of the sample resin composition, using a parallel plate having a diameter of 18 mm and holding for 1 minute at T ₁ (° C.) shown in Table 2, the dynamic viscoelastic modulus was measured under the measurement conditions of vibration 1 Hz and strain 1 deg. Measured and calculated melt viscosity.

<Evaluation of substrate warpage>
The substrate warpage was evaluated using the substrate c as shown in FIG. Specifically, at room temperature (23 ° C.), one side (CD side) of the substrate c (50 in FIG. 4) was fixed by the fixture 31 and hung in a direction perpendicular to the ground (horizontal plane). Here, a plane perpendicular to the ground including the CD side of the substrate c is assumed, and this is defined as a vertical plane (30 in FIG. 4). Then, the vertical heights (H _A and H _B ) at both ends of the opposite side (AB side) from the vertical plane 30, that is, the A end and the B end, are measured, and the average value ((H _A + H _B ) / 2 ) And the board | substrate curvature was evaluated based on the following reference | standard. In addition, when the average value in this evaluation is larger than 25 mm, troubles are likely to occur in substrate conveyance in the step of vacuum lamination of the second adhesive film.
Evaluation criteria:
○: Average value is 25 mm or less ×: Average value is greater than 25 mm

<Evaluation of component misalignment>
The change of the part position before and after lamination | stacking of a 2nd adhesive film was measured with the optical microscope ("VH-5500" by Keyence). In the measurement, a change in the position of the target component between the substrate c and the substrate d was measured. In this evaluation, the center of the component was used as a reference point, and the positional change (μm) of the reference point was measured. And the positional offset of components was evaluated based on the following evaluation criteria.
Evaluation criteria:
○: Change in position is less than 40 μm ×: Change in position is 40 μm or more

[Production Example 1]
(1) Preparation of resin varnish 1 28 parts of bisphenol A type epoxy resin (epoxy equivalent 180, “jER828EL” manufactured by Mitsubishi Chemical Corporation), naphthalene type tetrafunctional epoxy resin (epoxy equivalent 163, Dainippon Ink and Chemicals, Inc.) 28 parts of “HP4700”) and 20 parts of phenoxy resin (“YX6954BH30” manufactured by Mitsubishi Chemical Corporation, MEK solution with a solid content of 30%) were dissolved in a mixed solvent of 15 parts of MEK and 15 parts of cyclohexanone with stirring. It was. Thereto, 27 parts of a triazine skeleton-containing phenol novolak resin (hydroxyl equivalent 125, “LA7054” manufactured by DIC Corporation, MEK solution with a solid content of 60%, nitrogen content of approximately 12% by weight), naphthol-based curing agent (hydroxyl equivalent 215) 27 parts of “SN-485” manufactured by Tohto Kasei Co., Ltd., MEK solution having a solid content of 50% by weight, 0.1 part of imidazole curing accelerator (“2E4MZ” manufactured by Shikoku Kasei Kogyo Co., Ltd.), flame retardant (“Sanko Co., Ltd.“ HCA-HQ ”, 10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle size 2 μm), 5 parts, aminosilane Spherical silica (average particle size 0.5 μm, manufactured by Admatechs Co., Ltd.) “SOC2” surface-treated with a coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) ") 140 parts and 30 parts of polyvinyl butyral resin (" KS-1 "manufactured by Sekisui Chemical Co., Ltd., a 1: 1 solution of ethanol and toluene with a solid content of 15% by weight) are mixed uniformly with a high-speed rotating mixer. The resin varnish 1 was prepared by dispersing.
When the total of the non-volatile components in the resin varnish 1 was 100% by mass, the content of the inorganic filler (spherical silica) was about 58% by mass.
(2) Production of first adhesive film 1 As a support, a PET film with an alkyd resin release layer (“AL5” manufactured by Lintec Corporation, thickness 38 μm) was prepared. The resin varnish 1 prepared above is uniformly applied to the release layer side surface of the support with a die coater, and dried at 80 ° C. to 120 ° C. (average 100 ° C.) for 5 minutes to be first thermosetting. A resin composition layer was formed. The thickness of the first thermosetting resin composition layer was 25 μm. Next, a smooth surface side of a polypropylene film (“Alphan MA-411” manufactured by Oji Specialty Paper Co., Ltd., thickness 15 μm) as a protective film is bonded to the surface of the thermosetting resin composition layer, and first adhesion is performed. Film 1 was prepared.
(3) Production of Second Adhesive Film 1 As a support, a PET film with an alkyd resin release layer (“AL5” manufactured by Lintec Corporation, thickness 38 μm) was prepared. The resin varnish 1 prepared above is uniformly coated on the release layer side surface of the support with a die coater, and dried at 80 ° C. to 120 ° C. (average 100 ° C.) for 4 minutes to be second thermosetting. A resin composition layer was formed. The thickness of the second thermosetting resin composition layer was 30 μm. Next, a smooth surface side of a polypropylene film (“Alphan MA-411” manufactured by Oji Specialty Paper Co., Ltd., thickness 15 μm) as a protective film is bonded to the surface of the thermosetting resin composition layer, and the second adhesion is performed. Film 1 was prepared.

[Production Example 2]
(1) Preparation of resin varnish 2 5 parts of bisphenol type epoxy resin (“ZX1059” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., 1: 1 mixture of bisphenol A type and bisphenol F type, epoxy equivalent of about 169), naphthalene type epoxy resin (“HP4032SS” manufactured by DIC Corporation, epoxy equivalent of about 144), 5 parts of bixylenol type epoxy resin (“YX4000HK” manufactured by Mitsubishi Chemical Corporation, about 185 of epoxy equivalent), biphenyl type epoxy resin (Nippon Kayaku) 15 parts of “NC3000H” manufactured by (Co), and 10 parts of phenoxy resin (“YL7553BH30” manufactured by Mitsubishi Chemical Co., Ltd., MEK solution having a weight average molecular weight of about 35000 and a solid content of 30%) are mixed with solvent naphtha. While stirring, 25 parts were dissolved with heating. After cooling to room temperature, 10 parts of a triazine skeleton-containing phenol novolac-based curing agent (“LA-7054” manufactured by DIC Corporation, MEK solution having a hydroxyl equivalent weight of 125 and a solid content of 60%), a naphthol-based curing agent ( "SN-485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., 10 parts of hydroxyl equivalent 215, 60% solid content MEK solution), curing accelerator (4-dimethylaminopyridine (DMAP), 5% solid content MEK solution) 1 part, flame retardant (“HCA-HQ” manufactured by Sanko Co., Ltd., 10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle size 2 μm ) 3 parts, spherical silica ("SOC2" manufactured by Admatechs Co., Ltd.) surface-treated with an aminosilane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) The average particle diameter of 0.5 [mu] m, the carbon amount 0.39 mg ^/ m 2) 130 parts of a mixture of per unit surface area, are uniformly dispersed in a high-speed rotary mixer to prepare a resin varnish 2.
When the total of the non-volatile components in the resin varnish 2 was 100% by mass, the content of the inorganic filler (spherical silica) was about 73% by mass.
(2) Production of First Adhesive Film 2 As a support, a PET film with an alkyd resin release layer (“AL5” manufactured by Lintec Corporation, thickness 38 μm) was prepared. The resin varnish 2 prepared above is uniformly applied to the release layer side surface of the support with a die coater, and dried at 80 ° C. to 120 ° C. (average 100 ° C.) for 5 minutes to be first thermosetting A resin composition layer was formed. The thickness of the first thermosetting resin composition layer was 30 μm. Next, a smooth surface side of a polypropylene film (“Alphan MA-411” manufactured by Oji Specialty Paper Co., Ltd., thickness 15 μm) as a protective film is bonded to the surface of the thermosetting resin composition layer, and first adhesion is performed. Film 2 was prepared.
(3) Production of Second Adhesive Film 2 As a support, a PET film with an alkyd resin release layer (“AL5” manufactured by Lintec Corporation, thickness 38 μm) was prepared. The resin varnish 2 prepared above is uniformly coated on the release layer side surface of the support with a die coater, and dried at 80 ° C. to 120 ° C. (average 100 ° C.) for 4 minutes to be second thermosetting. A resin composition layer was formed. The thickness of the second thermosetting resin composition layer was 50 μm. Next, a smooth surface side of a polypropylene film (“Alphan MA-411” manufactured by Oji Specialty Paper Co., Ltd., thickness 15 μm) as a protective film is bonded to the surface of the thermosetting resin composition layer, and the second adhesion is performed. Film 2 was prepared.

<Example 1>
Substrates a to d were manufactured using the first adhesive film 1 and the second adhesive film 1 according to the procedure of [Preparation of measurement / evaluation sample]. Each evaluation result is shown in 2. Note that the substrate obtained b, the height of the non-resin filling region of the cavity (h _B) was 97 [mu] m.

<Example 2>
Substrates a to d were manufactured using the first adhesive film 2 and the second adhesive film 2 according to the procedure of [Preparation of measurement / evaluation sample]. Each evaluation result is shown in 2. Note that the substrate obtained b, the height of the non-resin filling region of the cavity (h _B) was 95 .mu.m.

<Example 3>
Substrates a to d were manufactured using the first adhesive film 1 and the second adhesive film 1 according to the procedure of [Preparation of measurement / evaluation sample]. Each evaluation result is shown in 2. Note that the substrate obtained b, the height of the non-resin filling region of the cavity (h _B) was 97 [mu] m.

<Example 4>
Substrates a to d were manufactured using the first adhesive film 1 and the second adhesive film 1 according to the procedure of [Preparation of measurement / evaluation sample]. Each evaluation result is shown in 2. Note that the substrate obtained b, the height of the non-resin filling region of the cavity (h _B) was 98 .mu.m.

<Example 5>
Substrates a to d were produced in the same manner as in Example 1 except that the evacuation time at the time of vacuum lamination of the second adhesive film was changed from 30 seconds to 60 seconds. Each evaluation result is shown in 2. It notes that the substrate obtained b, the height of the non-resin filling region of the cavity (h _B) was 97 [mu] m.

<Comparative Example 1>
Evaluation substrates a to d were manufactured using the first adhesive film 1 and the second adhesive film 1 in accordance with the procedure of [Preparation of measurement / evaluation sample]. Each evaluation result is shown in 2. Note that the substrate obtained b, the height of the non-resin filling region of the cavity (h _B) was 97 [mu] m.

DESCRIPTION OF SYMBOLS 1 Insulation board | substrate 1a Cavity 1 'Insulation board | substrate with which the cavity was formed 3 Components 10 1st adhesive film 11 1st support body 12 1st thermosetting resin composition layer 12' 1st thermosetting resin composition Layer (insulating layer)
20 2nd adhesive film 21 2nd support body 22 2nd thermosetting resin composition layer 22 '2nd thermosetting resin composition layer (insulating layer)
30 Vertical surface 31 Fixing tool 50 Evaluation board c
100 component built-in board

Claims (19)

A method for manufacturing a component-embedded substrate including the following steps (A), (B), (C) and (D) in this order:
(A) an insulating substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces, the first support and the first support; The first adhesive film including the first thermosetting resin composition layer to be bonded is vacuum-laminated such that the first thermosetting resin composition layer is bonded to the first main surface of the insulating substrate. Step (B) Step of Temporarily Attaching Parts to the First Thermosetting Resin Composition Layer in the Cavity (C) On the second main surface of the insulating substrate, the second support and the second support The second adhesive film including the second thermosetting resin composition layer to be bonded is vacuum-laminated so that the second thermosetting resin composition layer is bonded to the second main surface of the insulating substrate. A step of vacuum laminating under the condition that the heating temperature of the first adhesive film surface is lower than the heating temperature of the second adhesive film surface. ) First and step a second thermosetting resin composition layer to form a thermoset insulating layer.   The method according to claim 1, wherein the insulating substrate is a cured prepreg, a glass substrate, or a ceramic substrate. In the step (C), when the heating temperature of the first adhesive film surface is T ₁ (° C.) and the heating temperature of the second adhesive film surface is T ₂ (° C.), T ₁ and T ₂ are T ₂ -40 satisfy the relationship of ≦ _{T 1} ≦ _T 2 -10, the method according to claim 1 or 2.   The method according to any one of claims 1 to 3, wherein the second thermosetting resin composition layer is thicker than the first thermosetting resin composition layer. In step (A), the height h _A of the cavity of the insulating substrate before vacuum-laminating the first adhesive film and the height of the non-resin-filled region of the cavity of the insulating substrate after vacuum-laminating the first adhesive film It is and the _{h B,} satisfies the relation _{0.8h a ≦ h B ≦ h a} , method according to any one of claims 1-4.   The method according to any one of claims 1 to 5, wherein in the step (C), the melt viscosity of the first thermosetting resin composition layer is 2000 poise or more.   The process according to any one of claims 1 to 6, comprising a step of smoothing both sides of the first adhesive film side and the second adhesive film side by a hot press between the step (C) and the step (D). The method described.   The method according to any one of claims 1 to 7, wherein in step (D), thermosetting is performed with the first and second supports attached.   The method according to claim 1, wherein the insulating substrate has a thickness of 30 to 350 μm.   The method according to claim 1, wherein the pitch between the cavities is 1 to 10 mm.   The method according to any one of claims 1 to 10, wherein the inorganic filler content in the first thermosetting resin composition layer is 50% by mass or more.   The method according to any one of claims 1 to 11, wherein the warpage of the substrate obtained in the step (B) is 25 mm or less.   (E) The method of any one of Claims 1-12 which further includes the process of forming a through hole.   (F) The method of any one of Claims 1-13 further including the process of forming a conductor layer on an insulating layer. Step (F)
Roughening the insulating layer, and forming a conductor layer on the roughened insulating layer by plating;
15. The method of claim 14, comprising: An insulating substrate having first and second main surfaces and having a cavity formed between the first and second main surfaces;
A first insulating layer bonded to the first main surface of the insulating substrate;
A second insulating layer bonded to the second main surface of the insulating substrate;
A component provided on the first insulating layer so as to be accommodated inside the cavity of the insulating substrate,
The component-embedded insulating substrate, wherein the second insulating layer fills the cavity of the insulating substrate so as to embed the component. First and second conductor layers;
The component-embedded insulating substrate according to claim 16 provided between the first and second conductor layers by bonding to the first and second conductor layers,
An interlayer connection body for electrically connecting the first and second conductor layers;
A two-layer wiring board with built-in components.   The component built-in two-layer wiring board according to claim 17, wherein the first and second conductor layers are formed by plating.   A semiconductor device comprising a component-embedded substrate manufactured by the method according to claim 1.

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