CN104244603B

CN104244603B - The manufacturing method and semiconductor device of component internally-arranged type circuit board

Info

Publication number: CN104244603B
Application number: CN201410266044.9A
Authority: CN
Inventors: 奈良桥弘久; 中村茂雄; 真子玄迅
Original assignee: Ajinomoto Co Inc
Current assignee: Ajinomoto Co Inc
Priority date: 2013-06-17
Filing date: 2014-06-16
Publication date: 2018-05-29
Anticipated expiration: 2034-06-16
Also published as: TWI634826B; TW201511634A; KR20140146542A; KR102179621B1; CN104244603A

Abstract

The present invention relates to a kind of manufacturing methods of component internally-arranged type circuit board.The manufacturing method of the component internally-arranged type circuit board includes following processes in order（A）、（B）、（C）And（D）：（A）In a manner of the 1st hot curing resin composition layer to be made to be engaged with the 1st interarea of internal substrate, by the 1st vacuum laminated process in internal substrate of adhesive film；（B）Component is assembled to the process in the 1st hot curing resin composition layer of intracavitary temporarily；（C）In a manner of the 2nd hot curing resin composition layer to be made to be engaged with the 2nd interarea of internal substrate, by the process of vacuum laminated the 2nd interarea in internal substrate of the 2nd adhesive film, wherein, carried out under conditions of the heating temperature of the 1st bonding film surface is lower than the heating temperature of the 2nd bonding film surface vacuum laminated；（D）The process for making the 1st and the 2nd hot curing resin composition layer heat cure and forming insulating layer.

Description

The manufacturing method and semiconductor device of component internally-arranged type circuit board

Technical field

The present invention relates to the manufacturing methods and semiconductor device of component internally-arranged type circuit board.

Background technology

In recent years, smart phone, tablet（tablet）The demand of small-sized high function electronic equipment is increasing as PC Add.Concomitantly, it is desirable that the further height of the printed wiring board used in such small-sized high function electronic equipment Functionalization, miniaturization.

In printed wiring board, bare chip is installed（bare chip）, shaped like chips capacitor, the portions such as shaped like chips inductor Part.In the past, such component was installed only at the surface circuit of printed wiring board, and still, installation is limited, it is difficult to which reply is in recent years Further multifunction, the requirement of miniaturization of the printed wiring board come.

In order to tackle the problem of such, increase as the lift-launch amount of component can be made while seeking the printing cloth of miniaturization Line plate, it is proposed that component internally-arranged type circuit board（Patent document 1）.

Prior art literature

Patent document

Patent document 1：Special open 2011-216636 publications.

The content of the invention

The subject that the invention solves

Component internally-arranged type circuit board can for example use and be formed with to accommodate the chamber of component（cavity）Internal substrate According to following（i）Extremely（v）Order manufactured.In addition, when manufacturing component internally-arranged type circuit board, circuit base is generally used Plate is as internal substrate.（i）In the interarea of the folk prescription for the internal substrate for being formed with chamber, it is stacked for the interim of interim build-up member Fabricated material.（ii）Component is assembled to the adhesive surface in the interim fabricated material exposed via chamber temporarily.（iii）It is interim in intracavitary The interarea of the opposing party of the internal substrate of component is equipped with, hot curing resin composition layer is set, makes its heat cure and is formed Insulating layer.（iv）After interim fabricated material is removed, Thermocurable tree is set in the interarea of the folk prescription of the internal substrate of exposing Oil/fat composition layer makes its heat cure and forms insulating layer.Hereafter,（v）Conductor layer is set（Wiring）.

Realize further miniaturization, the lightweight of electronic equipment, it is desirable that component internally-arranged type circuit board itself it is small Type, slimming.However, it was found by the inventors of the present invention that in order to reach the miniaturization of component internally-arranged type circuit board itself, Slimming and use the high internal substrate of chamber density, thickness thin internal substrate when, in the master of the folk prescription of internal substrate Face forms the stage of insulating layer（It is above-mentioned（iii）Afterwards）, internal layer is generated as inner circumferential side using the face for being provided with insulating layer sometimes The phenomenon that substrate crimps（Hereinafter also referred to as " substrate warp ".）.When generating substrate warp, obstacle can be carried out to substrate conveyer belt, Cause manufacture efficiency（Yield rate）Reduction.

In addition, the miniaturization of built-in component, the small wiring of circuit are also developing, to the portion of the intracavitary of internal substrate The requirement of the configuration precision of part also becomes higher and higher.

The problem of the present invention is, provides a kind of change in location for the component that can inhibit substrate warp and can inhibit intracavitary （Offset）And realize the manufacturing method of the component internally-arranged type circuit board of the outstanding configuration precision of component.

Solution for solving the problem

The present inventor studies intensively above-mentioned problem, it turns out that, it can be by using following specific Method solve the above subject to manufacture component internally-arranged type circuit board, be finally completed the present invention.

That is, the present invention includes herein below.

[1] a kind of manufacturing method of component internally-arranged type circuit board, in order including following processes（A）、（B）、（C）With And（D）：

（A）In a manner of the 1st hot curing resin composition layer to be made to be engaged with the 1st interarea of internal substrate, by the 1st bonding The vacuum laminated process in internal substrate of film, wherein, the internal substrate has the 1st and the 2nd interarea, is formed with perforation the 1st And the 2nd chamber between interarea, the 1st adhesive film include the 1st supporting mass and the 1st heat cure engaged with the 1st supporting mass Property resin composition layer；

（B）Component is assembled to the process in the 1st hot curing resin composition layer of intracavitary temporarily；

（C）In a manner of the 2nd hot curing resin composition layer to be made to be engaged with the 2nd interarea of internal substrate, by the 2nd bonding The process of vacuum laminated the 2nd interarea in internal substrate of film is bonded film surface than the 2nd in the heating temperature of the 1st bonding film surface Heating temperature it is low under conditions of carry out it is vacuum laminated, wherein, the 2nd adhesive film include the 2nd supporting mass and with the 2nd Hold the 2nd hot curing resin composition layer of body engagement；

（D）The process for making the 1st and the 2nd hot curing resin composition layer heat cure and forming insulating layer.

[2] method according to [1], wherein, internal substrate is circuit substrate（Hereinafter also referred to as " the 1st embodiment Method "）.

[3] method according to [1], wherein, internal substrate is insulated substrate（Hereinafter also referred to as " the 2nd embodiment Method "）.

[4] method according to [3], wherein, insulated substrate is to cure prepreg（prepreg）, glass substrate or Ceramic substrate.

[5] according to any one of them method of [1]~[4], wherein, in process（C）In, it is being bonded film surface by the 1st Heating temperature be set to T₁（℃）, the 2nd bonding film surface heating temperature be set to T₂（℃）When, T₁And T₂Meet T₂-40≤T₁≤ T₂- 10 relation.

[6] according to any one of them method of [1]~[5], wherein, the 2nd hot curing resin composition layer is than the 1st Hot curing resin composition thickness.

[7] according to any one of them method of [1]~[6], wherein, in process（A）In, vacuum laminated 1st adhesive film The height h of the chamber of internal substrate before_AWith the non-resin fill area of the chamber of the internal substrate after vacuum laminated 1st adhesive film The height h in domain_BMeet 0.8h_A≤h_B≤h_ARelation.

[8] according to any one of them method of [1]~[7], wherein, in process（C）In, the 1st heat-curing resin group The melt viscosity for closing nitride layer is more than 2000 pools.

[9] according to any one of them method of [1]~[8], wherein, in process（C）And process（D）Between, including logical Cross the process that heating and mould pressing smooths the face of the 1st adhesive film side and the face of the 2nd adhesive film side.

[10] according to any one of them method of [1]~[9], wherein, in process（D）In, with the 1st and the 2nd It holds and carries out heat cure in the state of body.

[11] according to [2], any one of them method of [5]~[10], wherein, the thickness of circuit substrate is 50~350 μm。

[12] according to any one of them method of [3]~[10], wherein, the thickness of insulated substrate is 30~350 μm.

[13] according to any one of them method of [1]~[12], wherein, the spacing between chamber is 1~10mm.

[14] according to any one of them method of [1]~[13], wherein, in the 1st hot curing resin composition layer The amount of inorganic filling material is more than 50 mass %.

[15] according to any one of them method of [1]~[14], wherein, in process（B）In the obtained warpage of substrate For below 25mm.

[16] according to any one of them method of [1]~[15], wherein, it further includes（E）The process for carrying out perforate.

[17] according to any one of them method of [1]~[16], wherein, it further includes（F）Conductor is formed on the insulating layer The process of layer.

[18] method according to [17], wherein, process（F）Including carrying out roughening treatment to insulating layer and being roughened Conductor layer is formed by plating on insulating layer afterwards.

[19] a kind of component internally-arranged type insulated substrate, including：Insulated substrate has the 1st and the 2nd interarea, is formed with perforation Chamber between 1st and the 2nd interarea；1st insulating layer is engaged with the 1st interarea of insulated substrate；2nd insulating layer, with insulated substrate The 2nd interarea engagement；And component, it is arranged in a manner of being housed in the inside of chamber of insulated substrate on the 1st insulating layer, In, the 2nd insulating layer fills the chamber of insulated substrate in a manner that component to be embedded to.

[20] a kind of component internally-arranged type two-layer wiring substrate, including：1st and the 2nd conductor layer；According to the portion described in [19] Part internally-arranged type insulated substrate, engages with the 1st and the 2nd conductor layer, is arranged between the 1st and the 2nd conductor layer；And interlayer connection Body is electrically connected the 1st and the 2nd conductor layer.

[21] the component internally-arranged type two-layer wiring substrate according to [20], wherein, the 1st and the 2nd conductor layer passes through plating It is formed.

[22] a kind of semiconductor device, including the component internally-arranged type manufactured with any one of them method of [1]~[18] Circuit board.

Invention effect

According to the present invention, a kind of change in location for the component that can inhibit substrate warp and can inhibit intracavitary can be provided（Partially It moves）And realize the manufacturing method of the component internally-arranged type circuit board of the configuration precision of outstanding component.

Description of the drawings

Figure 1A is the circuit substrate that the formation for showing to prepare to use in the method for the 1st embodiment of the present invention has chamber The schematic diagram of one order（1）.

Figure 1B is the circuit substrate that the formation for showing to prepare to use in the method for the 1st embodiment of the present invention has chamber The schematic diagram of one order（2）.

Fig. 2A is the insulated substrate that the formation for showing to prepare to use in the method for the 2nd embodiment of the present invention has chamber The schematic diagram of one order（1）.

Fig. 2 B are the insulated substrates that the formation for showing to prepare to use in the method for the 2nd embodiment of the present invention has chamber The schematic diagram of one order（2）.

Fig. 3 is show the 1st adhesive film used in the manufacturing method of the component internally-arranged type circuit board of the present invention one The schematic diagram of a form.

Fig. 4 A are for illustrating the schematic diagram of the method for the 1st embodiment of the present invention（1）.

Fig. 4 B are for illustrating the schematic diagram of the method for the 1st embodiment of the present invention（2）.

Fig. 4 C are for illustrating the schematic diagram of the method for the 1st embodiment of the present invention（3）.

Fig. 4 D are for illustrating the schematic diagram of the method for the 1st embodiment of the present invention（4）.

Fig. 4 E are for illustrating the schematic diagram of the method for the 1st embodiment of the present invention（5）.

Fig. 4 F are for illustrating the schematic diagram of the method for the 1st embodiment of the present invention（6）.

Fig. 4 G are for illustrating the schematic diagram of the method for the 1st embodiment of the present invention（7）.

Fig. 5 A are for illustrating the schematic diagram of the method for the 2nd embodiment of the present invention（1）.

Fig. 5 B are for illustrating the schematic diagram of the method for the 2nd embodiment of the present invention（2）.

Fig. 5 C are for illustrating the schematic diagram of the method for the 2nd embodiment of the present invention（3）.

Fig. 5 D are for illustrating the schematic diagram of the method for the 2nd embodiment of the present invention（4）.

Fig. 5 E are for illustrating the schematic diagram of the method for the 2nd embodiment of the present invention（5）.

Fig. 5 F are for illustrating the schematic diagram of the method for the 2nd embodiment of the present invention（6）.

Fig. 5 G are for illustrating the schematic diagram of the method for the 2nd embodiment of the present invention（7）.

Fig. 6 is for illustrating the schematic diagram of the evaluation method of substrate warp.

Specific embodiment

[manufacturing method of component internally-arranged type circuit board]

The manufacturing method of the component internally-arranged type circuit board of the present invention includes following processes in order（A）、（B）、（C）And （D）.

In addition, in the present invention, on to process（A）Extremely（D）Described " including in order ", as long as including process（A） Extremely（D）Each process and also process（A）Extremely（D）Each process implement in this order, just do not interfere including other process.

Hereinafter, on to process or processing described " including in order " and similarly.

When manufacturing component internally-arranged type circuit board, as internal substrate, in general using circuit substrate.Thus, In the method for the 1st embodiment of the present invention, internal substrate is circuit substrate（It will be aftermentioned for " circuit substrate ".）.Hereinafter, The component internally-arranged type circuit board obtained with the method for the 1st embodiment is known as " component internally-arranged type circuit board ".

In addition, the present invention can also apply to the embodiment for using insulated substrate as internal substrate.Thus, in the present invention The 2nd embodiment method in, internal substrate is insulated substrate（It will be aftermentioned for " insulated substrate ".）.Hereinafter, will also be used The component internally-arranged type circuit board that the method for 2 embodiments obtains is known as " component internally-arranged type substrate ".

Before the method to the 1st embodiment of the present invention and the 2nd embodiment is described in detail, in the present invention Method in " circuit substrate for being formed with chamber ", " insulated substrate for being formed with chamber " and " adhesive film " that uses illustrate.

The circuit substrate that the formation used in the method for the 1st embodiment of the present invention has chamber is that have the 1st and the 2nd master Face, the circuit substrate for the chamber being formed between the 1st and the 2nd interarea of perforation.

The circuit substrate for being formed with chamber can be when manufacturing component internally-arranged type circuit board according to well-known in the past The order of meaning prepares.Hereinafter, with reference to Figure 1A and Figure 1B, an example for preparing to be formed with the order of the circuit substrate of chamber is illustrated Son.

First, circuit substrate is prepared（Figure 1A）.In the present invention, so-called " circuit substrate ", what is said is with the opposite the 1st There is the substrate of the plate for the wiring for carrying out pattern processing with the 2nd interarea, in the folk prescription of the 1st and the 2nd interarea or both sides. In figure 1A, it is schematically shown that the end face of circuit substrate 11, circuit substrate 11 include substrate 12 and guide hole（via）Wiring, The wirings such as surface wiring 13.In the following description, for convenience, the 1st interarea of circuit substrate is made to represent the electricity of diagram The downside interarea of base board makes the 2nd interarea of circuit substrate represent the upside interarea of the circuit substrate illustrated.

As the substrate 12 used in circuit substrate 11, such as epoxy glass substrate, metal substrate, polyester can be enumerated （polyester）Substrate, polyimides（polyimide）Substrate, BT resin substrates, thermohardening type polyphenylene oxide （Polyphenyleneether）Substrate etc., preferably epoxy glass substrate.In addition, when manufacturing printed wiring board, the present invention In described " circuit substrate " further include should be formed insulating layer and/or conductor layer among manufacture object internal layer circuit substrate.

The thickness of substrate 12 on circuit substrate 11 is thin according to the viewpoint of the slimming of component internally-arranged type circuit board It is more suitable, preferably less than 400 μm, more preferably less than 350 μm, more preferably less than 300 μm, more preferably less than 250 μm, Particularly preferably less than 200 μm, less than 180 μm, less than 170 μm, less than 160 μm or less than 150 μm.Side according to the present invention Even if method in the case where using the circuit substrate for possessing such thin substrate, can also inhibit the generation of substrate warp.Although The lower limit of the thickness of substrate 12 is not particularly limited, still, according to improve transmit when disposal viewpoint, be preferably 20 μm with On, more preferably 40 μm or more, 50 μm or more, 60 μm or more, 70 μm or more or 80 μm or more.

On the coefficient of thermal expansion of substrate 12, deformed according to suppression circuit, generate crack（crack）Viewpoint, preferably Less than 15ppm/ DEG C, more preferably less than 13ppm/ DEG C, are further preferred that less than 11ppm/ DEG C.Although the thermal expansion of substrate 12 The lower limit of coefficient also relies on the composition of the resin combination used in the formation of insulating layer, however, it is preferred to be -2ppm/ DEG C More than, more preferably 0ppm/ DEG C or more, it is further preferred that 4ppm/ DEG C or more.In the present invention, the thermal expansion system of substrate 12 Number is to carry out thermo-mechanical analysis by using tensile load method（TMA）Obtained from, the line heat at 25~150 DEG C of in-plane it is swollen Swollen coefficient.As the thermo-mechanical analysis device that can be used in the measurement of the coefficient of linear thermal expansion of substrate 12, for example, can enumerate （Strain）Rigaku systems " Thermo Plus TMA8310 ", SeikoInstruments（Strain）It makes " TMA-SS6100 ".

Glass transition temperature on substrate 12（Tg）, it is excellent according to the viewpoint of the mechanical strength of component internally-arranged type circuit board Choosing is 170 DEG C or more, more preferably 180 DEG C or more.Although the upper limit of the Tg of substrate 12 is not particularly limited, be usually Less than 300 DEG C.The Tg of substrate 12 can carry out thermo-mechanical analysis to measure by using tensile load method.It is filled as thermo-mechanical analysis It puts, thermo-mechanical analysis device same as described above can be used.

The size for the wiring 13 that circuit substrate 11 possesses can be determined according to required characteristic.For example, on The thickness of surface wiring, according to the viewpoint of the slimming of component internally-arranged type circuit board, preferably less than 40 μm, more preferably 35 μm Hereinafter, less than 30 μm, more preferably less than 25 μm, particularly preferably less than 20 μm, less than 19 μm or less than 18 μm are more preferably. Although the lower limit of the thickness of surface wiring is not particularly limited, be typically 1 μm or more, 3 μm or more, 5 μm with first-class.

Next, it sets to accommodate the chamber of component in circuit substrate（Figure 1B）.As schematically shown in fig. ib As, the chamber 12a between the 1st and the 2nd interarea that can perforation circuit substrate be set in the defined position of substrate 12.As a result, It can obtain being formed with the circuit substrate 11 ' of chamber.Consider the characteristic of substrate 12, chamber 12a for example can be by using drill bit（drill）、 The well-known method of laser, plasma, etching media etc. is formed.

Although illustrating only 1 chamber 12a in fig. ib, it also can mutually be spaced apart defined interval and be provided with multiple Chamber 12a.On the spacing between chamber 12a, according to the viewpoint of the miniaturization of component internally-arranged type circuit board, short is suitable.Although chamber Spacing between 12a also relies on the chamber 12a opening sizes of itself, however, it is preferred to be below 10mm, more preferably below 9mm, More preferably below 8mm, more preferably below 7mm, particularly preferably below 6mm.The method according to the invention, even if with this In the case that the short spacing of sample sets chamber, it can also inhibit the generation of substrate warp.Although the lower limit of the spacing between chamber 12a is also Dependent on the chamber 12a opening sizes of itself, still, typically more than 1mm, 2mm is with first-class.Each spacing between chamber 12a must not It is identical throughout circuit substrate, it can not also be same.

The opening shape of chamber 12a is not particularly limited, and can become rectangle, circle, substantially rectangular, circular etc. and appoint The shape of meaning.In addition, although the opening size of chamber 12a also relies on the design of wiring, such as opening in chamber 12a In the case that mouth-shaped is rectangle, preferably 5mm × below 5mm, more preferably 3mm × below 3mm.Although the opening size Lower limit also relies on the size of accommodated component, is typically 0.5mm × 0.5mm still.The opening shape and opening of chamber 12a Size need not be identical throughout circuit substrate, can not also be same.

More than, although an example for being formed with the order of the circuit substrate of chamber to preparation with reference to Figure 1A and Figure 1B carries out Illustrate, still, as long as the circuit substrate of chamber can be obtained being formed with, be just not limited to above-mentioned order.For example, it is also possible in substrate It forms chamber and wiring is set afterwards.The formation prepared using variation in this way has the circuit substrate of chamber to manufacture component The form of internally-arranged type circuit board is also within the scope of the invention.

The insulated substrate that the formation used in the method for the 2nd embodiment of the present invention has chamber is that have the 1st and the 2nd master Face, the insulated substrate for the chamber being formed between the 1st and the 2nd interarea of perforation.

Being formed with the insulated substrate of chamber can prepare in any order.Hereinafter, illustrate with reference to Fig. 2A and Fig. 2 B Preparation is formed with an example of the order of the insulated substrate of chamber.

First, insulated substrate is prepared（Fig. 2A）.In the present invention, so-called " insulated substrate ", what is said is with the opposite the 1st With the 2nd interarea, the substrate for the plate for showing electrical insulating property.In the following description, for convenience, the 1st of insulated substrate is made to lead Face represents the downside interarea of the insulated substrate of diagram, and the 2nd interarea of insulated substrate is made to represent the upside master of the insulated substrate illustrated Face.

It on insulated substrate 21, is not particularly limited, can be to electric conductivity base as metal substrate with insulating materials Plate is coated and imparts the substrate of insulating properties, still, according to the compacting viewpoint of substrate warp, component internally-arranged type substrate it is exhausted The viewpoint of edge reliability preferably cures prepreg, glass substrate or ceramic substrate, more preferably cures prepreg.

So-called curing prepreg, what is said is the solidfied material of prepreg.Prepreg is to include heat-curing resin group The flaky material of object and sheet-like fiber base material is closed, for example, hot curing resin composition can be made to be immersed in sheet-like fiber base material And it is formed.On the hot curing resin composition used in prepreg, if the solidfied material have sufficient hardness and Insulating properties is just not particularly limited, and the past used in the formation of the insulating layer of printed wiring board can be used well-known Hot curing resin composition.Alternatively, the hot curing resin composition used in prepreg can also be with aftermentioned Adhesive film in the identical composition of the hot curing resin composition that uses.The sheet-like fiber base material used in prepreg It is not particularly limited, it can be used as the common base material of prepreg base material institute.According to the heat that can make curing prepreg The viewpoint that the coefficient of expansion reduces, as sheet-like fiber base material, preferably fiberglass substrate, organic fiber base material（For example, aromatic series Polyamide（aramid）Fiber base material）, more preferable fiberglass substrate, more preferable glass fabric（glass cloth）.As The glass fibre used in fiberglass substrate, according to the viewpoint that can reduce coefficient of thermal expansion, preferably from by E glass fibers 1 kind or more of glass fibre of the group selection that dimension, S glass fibres, T glass fibres and Q glass fibres are formed, more preferable S glass Glass fiber, Q glass fibres, more preferable Q glass fibres.So-called Q glass fibres, what is said is that the containing ratio of silica accounts for 90 matter Measure the glass fibre of more than %.On the thickness of sheet-like fiber base material, according to the viewpoint for the slimming for curing prepreg, preferably It is less than 200 μm, more preferably less than 100 μm, more preferably less than 80 μm, more preferably less than 50 μm, particularly preferably 40 μ Below m.According to the lower limit for obtaining having the sufficiently viewpoint, the preferably thickness of sheet-like fiber base material of rigid curing prepreg It is 1 μm or more, more preferably 10 μm or more, more preferably 15 μm or more.

On the thickness of insulated substrate 21, according to the viewpoint of the slimming of component internally-arranged type substrate, thin is more suitable, preferably It is less than 400 μm, more preferably less than 350 μm, more preferably less than 300 μm, more preferably less than 250 μm are particularly preferably Less than 200 μm, less than 180 μm, less than 170 μm, less than 160 μm or less than 150 μm.The method according to the invention, even if making In the case of with such thin insulated substrate, it can also inhibit the generation of substrate warp.Although under the thickness of insulated substrate 21 Limit is not particularly limited, still, according to the viewpoint for improving disposal when transmitting, preferably 30 μm or more, more preferably 40 μm More than, more preferably 50 μm or more, more preferably 60 μm or more, 70 μm or more or 80 μm or more.

The coefficient of thermal expansion and glass transition temperature Tg of insulated substrate 21 can be set to the thermal expansion system with aforesaid substrate 11 Number is identical with glass transition temperature.

Next, it sets to accommodate the chamber of component on insulated substrate（Fig. 2 B）.As schematically shown in fig. 2b As, the chamber 21a between the 1st and the 2nd interarea that can perforation insulated substrate be set in the defined position of insulated substrate 21.It closes In chamber 21a, the characteristic of consideration insulated substrate 21, for example, can be by using the crowd of drill bit, laser, plasma, etching media etc. Well known method is formed.

Although illustrating only 1 chamber 21a in fig. 2b, it can also be separated from each other defined interval and be provided with multiple Chamber 21a.On the spacing between chamber 21a, according to the viewpoint of the miniaturization of component internally-arranged type substrate, short is suitable.Between chamber 21a Spacing can set spacing between above-mentioned chamber 12a is identical.Each spacing between chamber 21a is not necessarily to throughout insulated substrate It is identical, it can not also be same.

The opening shape and opening size of chamber 21a can be set to and the opening shape of above-mentioned chamber 12a and opening size phase Together.The opening shape of chamber 21a and opening size be not necessarily to it is identical throughout insulated substrate, can not also be same.

According to above order, can prepare to be formed with the insulated substrate 1 ' of chamber.

In the method for the invention, using the 1st adhesive film and the 2nd adhesive film.

（1st adhesive film）

The end face of the 1st adhesive film is schematically shown in figure 3.1st adhesive film 100 include the 1st supporting mass 101 and with 1st hot curing resin composition layer 102 of the 1st supporting mass engagement.

As the 1st supporting mass, such as the film being molded of plastic material, metal foil, release paper can be enumerated, preferably by plastics The film of material composition, metal foil.

In the case where using the film being molded of plastic material as the 1st supporting mass, as plastic material, for example, can lift Go out polyethylene terephthalate（Polyethylene terephthalate, below, sometimes referred to simply as " PET ".）, poly- naphthalene Naphthalate（Polyethylene naphthalate, below, sometimes referred to simply as " PEN ".）Wait polyester, makrolon （Polycarbonate, below, sometimes referred to simply as " PC ".）, polymethyl methacrylate（Polymethylmethacrylate, PMMA）Wait acrylate, cyclic polyolefin（polyolefin）, Triafol T（Triacetylcellulose, TAC）、 Polyether sulfides（Polyether sulfide, PES）, polyether-ketone（polyether ketone）, polyimides etc..Wherein, more It is preferred that polyethylene terephthalate, polyethylene naphthalate, particularly preferably cheap polyethylene terephthalate Ester.

In the case where using metal foil as the 1st supporting mass, as metal foil, for example, copper foil, aluminium foil etc. can be enumerated, It is preferred that copper foil.As copper foil, the paper tinsel being made of the elemental metals of copper can be used, can also be used by copper and other metals（Example Such as, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium etc.）Alloy form paper tinsel.

On the 1st supporting mass, can implement in the face engaged with aftermentioned 1st hot curing resin composition layer at dumb light Reason（matte process）, sided corona treatment（corona process）.

In addition, as the 1st supporting mass, it can also use and engaged with aftermentioned 1st hot curing resin composition layer Face has the subsidiary release stratotype supporting mass of release layer.It is release as being used in the incidentally release layer of release stratotype supporting mass Agent, for example, can enumerate from by alkyd resin（alkyd resin）, vistanex, polyurethane resin and silicone resin form Group selection a kind or more of mould release.Subsidiary release stratotype supporting mass can use the commodity of commercial type, for example, can It enumerates as with PET film, the LINTEC using alkyd resin system mould release as the release layer of principal component（Strain）" the SK- of system 1 ", " AL-5 ", " AL-7 " etc..

Although the thickness of the 1st supporting mass is not particularly limited, however, it is preferred to be 5 μm~75 μm of scope, more preferably 10 μm~60 μm of scope.In addition, in the case where using incidentally release stratotype supporting mass, preferably subsidiary release stratotype supporting mass is whole The thickness of body is above range.

As aftermentioned, the 1st supporting mass can also contain laser light absorbing material.As laser light absorbing material, for example, can Enumerate metallic compound powder, carbon dust, metal powder, black dyes etc..In the case of containing laser light absorbing material, preferably the 1st The amount for holding the laser light absorbing material in body is 0.05~40 mass %, more preferably 0.1~20 mass %.

It is reduced according to the coefficient of thermal expansion of the insulating layer made and prevents the difference of the thermal expansion by insulating layer and conductor layer from making Into generation slight crack, circuit modifications viewpoint and prevent melt viscosity excessive reduce and the sight of the position offset of suppression component Point, the resin combination preferably used in the 1st hot curing resin composition layer include inorganic filling material.

According to the viewpoint of the coefficient of thermal expansion of the insulating layer made reduction and prevent excessive reduce of melt viscosity and press down The viewpoint of the position offset of component processed, the amount of the inorganic filling material in preferred resin composition is more than 30 mass %, more Preferably more than 40 mass %, more preferably more than 50 mass %, more preferably more than 60 mass %, particularly preferably 62 mass % with Upper, more than 64 mass % or more than 66 mass %.Particularly, according to the viewpoint of the position offset of suppression component, preferred resin combination The amount of inorganic filling material in object is more than 50 mass %.According to the viewpoint of the mechanical strength of obtained insulating layer, preferably The upper limit of the amount of inorganic filling material in resin combination is below 90 mass %, more preferably below 85 mass %.

In addition, in the present invention, the amount of each ingredient in resin combination be set it is non-volatile in resin combination Value when adding up to 100 mass % of ingredient.

As inorganic filling material, for example, silica can be enumerated（silica）, aluminium oxide（alumina）, glass, violet Green stone（cordierite）, Si oxide, barium sulfate, talcum, clay（clay）, mica powder, aluminium hydroxide, magnesium hydroxide, carbon Sour calcium, magnesium carbonate, magnesia, boron nitride, aluminium nitride, nitrogenized manganese, aluminium borate, barium titanate, strontium titanates, calcium titanate, magnesium titanate, titanium Sour bismuth, titanium oxide, barium zirconate, calcium zirconate, basic zirconium phosphate and phosphoric acid tungsten wire array etc..Among them, especially amorphous titanium dioxide The silica such as silicon, fused silica, crystalline silica, synthetic silica, hollow silica are particularly preferred.This Outside, as silica, preferably spherical silicon dioxide.Inorganic filling material can be used alone, can also combine two kinds with Upper use.As the spheroidal fused silica of market sale, for example, can enumerate（Strain）ADMATECHS systems " SOC2 ", “SOC1”。

On the scope of the average grain diameter of inorganic filling material, preferably 0.01 μm~4 μm, more preferably 0.05 μm~2 μ The scope of the scope of the scope of m, more preferably 0.1 μm~1 μm, more preferably 0.3 μm~0.8 μm.Inorganic filling material is put down Equal grain size can be measured by the laser diffraction scattering method based on MieShi scattering theories.Specifically, laser diffraction can be utilized Scattering formula particle size distribution measurement device makes the size distribution of inorganic filling material with volume reference, by in-between grain size （median diameter）As average grain diameter, measure as a result,.On measurement sample, it can be preferred to use and utilize ultrasonic wave Make the sample that inorganic filling material is dispersed in water.As laser diffraction and scattering formula particle size distribution measurement device, can use（Strain） Rise abruptly field making made " LA-500 " etc..

On inorganic filling material, according to the viewpoint for improving moisture-proof and dispersiveness, amino silane is preferably used（amino silane）It is coupling agent, epoxy silane（epoxy silane）It is coupling agent, hydrosulphonyl silane（mercapto silane）System is even Join agent, silane series coupling agent, organosilazanes（organo-silazane）Compound, titanate（titanate）It is coupling agent Deng a kind or more of surface conditioning agent handled.As the market merchandising of surface conditioning agent, for example, SHIN-ETSU HANTOTAI can be enumerated Chemical industry（Strain）It makes " KBM403 "（3-（The third oxygen of 2,3- epoxies）Propyl trimethoxy silicane（3- Glycidoxypropyltrimethoxysilane））, SHIN-ETSU HANTOTAI's chemical industry（Strain）It makes " KBM803 "（3- mercaptopropyi trimethoxies Base silane（3-Mercaptopropyltrimethoxysilane））, SHIN-ETSU HANTOTAI's chemical industry（Strain）It makes " KBE903 "（3- amino Propyl-triethoxysilicane（3- aminopropyltriethoxysilane））, SHIN-ETSU HANTOTAI's chemical industry（Strain）It makes " KBM573 " （N- phenol -3- TSL 8330s（N-phenol-3-aminopropyltrimethoxysilane））, letter More chemical industry（Strain）It makes " SZ-31 "（Hexamethyldisilazane（hexamethyldisilazane））Deng.

On the degree of the surface treatment carried out using surface conditioning agent, the per surface area of inorganic filling material can be passed through Average carbon amounts is evaluated.The average carbon amounts of per surface area on inorganic filling material, according to improving inorganic fill material Material dispersiveness viewpoint, preferably more than 0.02mg/ ㎡, more preferably more than 0.1mg/ ㎡, more preferably 0.2mg/ ㎡ with On.On the other hand, according to preventing resin varnish（varnish）Melt viscosity or melt viscosity under film morphology rising Viewpoint is preferably below 1mg/ ㎡, more preferably below 0.8mg/ ㎡, more preferably below 0.5mg/ ㎡.

The average carbon amounts of the per surface area of inorganic filling material can be with solvent（For example, methyl ethyl ketone（methyl Ethyl ketone, MEK））It is measured after inorganic filling material after surface treatment is started the cleaning processing.Specifically, make The MEK of the amount of full is added to inorganic filling material after being surface-treated with surface conditioning agent for solvent, at 25 DEG C 5 minutes ultrasonic cleanings of lower progress.After upper clear liquid is removed, dry solid state component, nothing can be measured using carbon analysis meter The average carbon amounts of the per surface area of machine packing material.As carbon analysis meter, can use（Strain）Hole field makes made " EMIA- 320V " etc..

As the heat-curing resin used in the 1st hot curing resin composition layer, can use form printed wiring The previous well-known heat-curing resin used during the insulating layer of plate, wherein, particularly preferred epoxy resin.In an implementation In mode, the resin combination used in the 1st hot curing resin composition layer includes inorganic filling material and epoxy resin. In addition, as needed, resin combination can also include curing agent.In one embodiment, in the 1st heat-curing resin group Closing the resin combination of nitride layer includes inorganic filling material, epoxy resin and curing agent.For the 1st heat-curing resin group Thermoplastic resin, curing accelerator, fire retardant and rubber granule can also be further included by closing the resin combination used in nitride layer The additives such as son.

Hereinafter, to can be illustrated as the epoxy resin, curing agent and additive of the materials'use of resin combination.

- epoxy resin-

As epoxy resin, for example, bis-phenol can be enumerated（bisphenol）It is A types epoxy resin, bisphenol f type epoxy resin, double Phenol S types epoxy resin, bisphenol AF type epoxy resin, bicyclopentadiene（dicyclopentadiene）Type epoxy resin, trisphenol （trisphenol）Type epoxy resin, naphthol novolac（naphthol novolac）Type epoxy resin, phenol novolak type asphalt mixtures modified by epoxy resin Fat, tert- butyl（butyl）- benzene phosphorus diphenol（catechol）Type epoxy resin, naphthalene（naphthalene）Type epoxy resin, naphthalene Phenol（naphthol）Type epoxy resin, anthracene（anthracene）Type epoxy resin, glycidyl amine（glycidyl amine）Type Epoxy resin, ethylene oxidic ester（glycidyl ester）Type epoxy resin, cresol-novolak（cresol novolac）Type asphalt mixtures modified by epoxy resin Fat, biphenyl（biphenol）Type epoxy resin, wire aliphatic epoxy resin have butadiene（butadiene）The ring of structure Oxygen resin, alicyclic epoxy resin, hetero ring type epoxy resin, epoxy resin containing loop coil, cyclohexanedimethanol （cyclohexanedimethanol）Type epoxy resin, naphthol ethyl ether（naphthylene ether）Type epoxy resin and three hydroxyls First type epoxy resin etc..Epoxy resin can be used alone, alternatively, can also and with two or more.

Preferred epoxy is included in the epoxy resin with the epoxy group of 2 or more in 1 molecule.By epoxy resin Nonvolatile component be set to 100 mass % in the case of, preferably at least more than 50 mass % be in 1 molecule have 2 with On epoxy group epoxy resin.Wherein, particularly preferably it is included in 1 molecule with the epoxy group of 2 or more, in temperature 20 DEG C be liquid epoxy resin（Hereinafter referred to as " liquid epoxy resin ".）With in 1 molecule have 3 or more epoxy group, In 20 DEG C of epoxy resin for solid-like of temperature（Hereinafter referred to as " solid-like epoxy resin ".）.By and use liquid epoxy resin With solid-like epoxy resin as epoxy resin, so as to obtain that there is outstanding flexible resin combination.In addition, cure Resin combination and the fracture strength of insulating layer that is formed can also improve.

As liquid epoxy resin, preferably bisphenol A type epoxy resin, bisphenol f type epoxy resin, phenol novolak type asphalt mixtures modified by epoxy resin Fat or naphthalene type epoxy resin, more preferable bisphenol A type epoxy resin, bisphenol f type epoxy resin or naphthalene type epoxy resin.As liquid The specific example of epoxy resin can enumerate DIC（Strain）" HP4032 ", " HP4032H ", " HP4032D ", " HP4032SS " of system （Naphthalene type epoxy resin）, Mitsubishi Chemical（Strain）" jER828EL " of system（Bisphenol A type epoxy resin）、“jER807”（Bisphenol F type ring Oxygen resin）、“jER152”（Phenol novolak type epoxy）, Nippon Steel live aurification（Strain）" ZX1059 " of system（Bisphenol-A type ring The melange of oxygen resin and bisphenol f type epoxy resin）、NAGASECHEMTEX（Strain）" EX-721 " of system（Glycidyl ester type Epoxy resin）.They can be used alone, alternatively, can also and with two or more.

As solid-like epoxy resin, preferably 4 functional epoxy resins of naphthalene type, cresol-novolak type epoxy resin, bicyclopentadiene Type epoxy resin, triphen phenol-type epoxy resin, naphthol novolac type epoxy resin, biphenyl type epoxy resin or naphthol ethyl ether type asphalt mixtures modified by epoxy resin Fat, more preferable 4 functional epoxy resins of naphthalene type, biphenyl type epoxy resin or naphthol ethyl ether type epoxy resin, more preferable biphenyl type epoxy Resin.As the specific example of solid-like epoxy resin, DIC can be enumerated（Strain）" HP-4700 ", " HP-4710 " of system（Naphthalene type 4 functional epoxy resins）, " N-690 "（Cresol-novolak type epoxy resin）, " N-695 "（Cresol-novolak type epoxy resin）, " HP- 7200”（Dicyclopentadiene-type epoxy resin）, " EXA7311 ", " EXA7311-G3 ", " HP6000 ", " EXA7311-G4 ", " EXA7311-G4S "（Naphthol ethyl ether type epoxy resin）, Japanese chemical drug（Strain）" EPPN-502H " of system（Trisphenol asphalt mixtures modified by epoxy resin Fat）、“NC7000L”（Naphthol novolac epoxy resin）、“NC3000H”、“NC3000”、“NC3000L”、“NC3100”（Biphenyl type Epoxy resin）, Nippon Steel live aurification（Strain）" ESN475V " of system（Naphthol novolac type epoxy resin）、“ESN485”（Naphthols phenol Aldehyde type epoxy resin）, Mitsubishi Chemical（Strain）" YL6121 " of system（Biphenyl type epoxy resin）、“YX4000H”、“YX4000HK” （Bis-xylene phenol（bixylenol）Type epoxy resin）, Osaka gas chemistry（Strain）System " PG-100 ", " CG-500 ", three Water chestnut chemistry（Strain）" YL7800 " of system（Fluorenes（fluorene）Type epoxy resin）Deng.

As epoxy resin, and in the case of liquid epoxy resin and solid-like epoxy resin, preferred their amount Than（Liquid epoxy resin：Solid-like epoxy resin）It is 1 in mass ratio：0.1~1：4 scope.By making liquid epoxy resin Amount ratio with solid-like epoxy resin is such scope, so as to can obtain following effect, i.e. i）In the form of adhesive film , it can be achieved that suitable adhesiveness in the case of use；ii）In the case of the use in the form of adhesive film, it can obtain sufficiently Pliability improves disposal property；And iii）The insulating layer with sufficient fracture strength can be obtained, etc..According to above-mentioned i）~ iii）Effect viewpoint, preferably liquid epoxy resin and solid-like epoxy resin amount ratio（Liquid epoxy resin：Solid-like ring Oxygen resin）It is 1 in mass ratio：0.3~1：3.5 scope, more preferably 1：0.6~1：3 scope, particularly preferably 1：0.8 ~1：2.5 scope.

The amount of epoxy resin in resin combination is preferably the mass % of 3 mass %~50, more preferably 5 mass % The mass % of~45 mass %, more preferably the mass % of 5 mass %~40, particularly preferably 7 mass %~35.

The epoxide equivalent of preferred epoxy is 50~3000, more preferably 80~2000, more preferably 110~1000. By becoming the scope, become abundant so as to the key density of solidfied material and realize the low insulating layer of surface roughness.In addition, epoxy Equivalent is the quality of the resin of epoxy group can be measured according to JISK7236, including 1 equivalent.

- curing agent-

It as curing agent, as long as having the function of to make epoxy resin cure, is just not particularly limited, for example, benzene can be enumerated Phenol system curing agent, naphthols system curing agent, active ester system curing agent, benzodiazine（benzooxazine）It is curing agent and cyanic acid Ester（cyanate ester）It is curing agent.Curing agent can be used alone, alternatively, can also and with two or more.

As phenol system curing agent and naphthols system curing agent, according to heat resistance and the viewpoint of water resistance, phenolic aldehyde is preferably had The phenol system curing agent of structure or the naphthols system curing agent with phenolic structure.In addition, according to conductor layer（Wiring）'s The viewpoint of close property, preferably nitrogenous phenol system curing agent or nitrogenous naphthols system curing agent, further preferably triazine（triazine） The phenol system curing agent of skeleton or the naphthols system curing agent containing triazine skeleton.Wherein, according to highly meeting heat resistance, water resistance And the close property with conductor layer（Peel strength）Viewpoint, particularly preferably using containing triazine skeleton phenol novolacs make For curing agent.

As phenol system curing agent and the specific example of naphthols system curing agent, for example, bright and chemical conversion can be enumerated（Strain）System " MEH-7700 ", " MEH-7810 ", " MEH-7851 ", Japanese chemical drug（Strain）" NHN ", " CBN ", " GPH ", the Nippon Steel of system Firmly aurification（Strain）System " SN170 ", " SN180 ", " SN190 ", " SN475 ", " SN485 ", " SN495 ", " SN375 ", “SN395”、DIC（Strain）" LA7052 ", " LA7054 ", " LA3018 " etc. of system.

Although being not particularly limited as active ester system curing agent, in general, it is preferred to use phenol ester （phenol ester）Class, benzenethiol ester（thiophenol ester）Class, N- hydroxylamine esters（N-hydroxy amine ester）The chemical combination for the ester group that class, esters of heterocycle hydroxyl compound etc. have 2 or more reactivities high in 1 molecule Object.It is preferred that the active ester system curing agent passes through carboxylic acid compound and/or thiocarboxylic acid（thiocarboxylic acid）Compound With hydroxy compounds and/or mercaptan（thiol）The condensation reaction of compound and obtain.Particularly, according to the sight for improving heat resistance Point, the active ester system curing agent preferably obtained by carboxylic acid compound and hydroxy compounds, more preferably by carboxylic acid compound and phenol The active ester system curing agent that compound and/or naphthol compound obtain.As carboxylic acid compound, for example, can enumerate benzoic acid, Acetic acid, succinic acid, maleic acid（maleic acid）, itaconic acid（itaconic acid）, phthalandione（phthalic acid）, it is different Phthalandione（isophthalic acid）, terephalic acid（terephthalic acid）, pyromellitic acid（pyromellitic acid） Deng.As oxybenzene compound or naphthol compound, for example, hydroquinone can be enumerated（hydroquinone）, resorcinol （resorcin）, bisphenol-A, Bisphenol F, bisphenol S, phenolphthalein（phenol phthalin）, the bisphenol-A that methylates, the Bisphenol F that methylates, first Base bisphenol S, phenol, o- cresols（cresol）, m- cresols, p- cresols, benzene phosphorus diphenol, alpha-Naphthol, betanaphthol, 1,5- Dihydroxy naphthlene, 1,6- dihydroxy naphthlenes, 2,6- dihydroxy naphthlenes, dihydroxy benzophenone（benzophenone ）, trihydroxy benzene first Ketone, tetrahydroxy benzene ketone, phloroglucin（phloroglucin）, benzenetriol（benzenetriol）, dicyclopentadiene-type hexichol Phenolic compounds, phenol novolac etc..

In particular, it is preferred that the active ester compound comprising dicyclopentadiene-type biphenol structure, the work comprising naphthalene structure Property ester compounds, the acetyl group comprising phenol novolac（acetyl）The active ester compound of compound, the benzoyl comprising phenol novolac （benzoyl）The active ester compound of compound, wherein, especially the active ester compound comprising naphthalene structure, include two rings penta 2 The active ester compound of ene-type biphenol structure is more preferable.In addition, in the present invention, so-called " dicyclopentadiene-type biphenol knot Structure " is represented by phenylene（phenylene）- two cyclopentylenes（dicyclopentalene）The divalent that-phenylene is formed Structural units.

As the market merchandising of active ester system curing agent, as the activity for including dicyclopentadiene-type biphenol structure Ester compounds can enumerate " EXB9451 ", " EXB9460 ", " EXB9460S ", " HPC-8000-65T "（DIC（Strain）System）, make For the active ester compound comprising naphthalene structure, can enumerate " EXB9416-70BK "（DIC（Strain）System）, as including phenol novolac Acetyl group compound active ester compound, can enumerate " DC808 "（Mitsubishi Chemical（Strain）System）, as the benzene comprising phenol novolac The active ester compound of acylate can be enumerated " YLH1026 "（Mitsubishi Chemical（Strain）System）Deng.

As the specific example of benzodiazine system curing agent, Showa macromolecule can be enumerated（Strain）" HFB2006M " of system, four State's chemical conversion industry（Strain）" P-d ", " F-a " of system.

As cyanate system curing agent, for example, bisphenol A dicyanate can be enumerated（dicyanate）, polyphenyl phenol cyanate （polyphenolcyanate）, it is oligomeric（3- methylene -1,5- phenylenecyanates）（oligo（3-methylene-1,5- phenylenecyanate））, 4,4'- methylene two（2,6- xylenol cyanates）（4,4'-methylenebis （2,6-dimethylphenylcyanate））, 4,4'- ethylidene（ethylidene）Biphenol dicyanate, hexafluoro （hexafluoro）Bisphenol A dicyanate, 2,2- bis-（4- cyanates）Phenol propane, 1,1- bis-（4- cyanate phenol first Alkane）, two（4- cyanates -3,5-dimethylphenol）Methane, 1,3- bis-（4- cyanate phenol -1-（Methyl Asia second Base））Benzene, two（4- cyanate phenol）Thioether（thioether）And by two（4- cyanate phenol）The 2 function cyanate such as ether Multifunctional cyanate ester resin, these cyanate ester resins part carry out triazine derived from resin, phenol novolac and cresol-novolak etc. Prepolymer of change etc..As the specific example of cyanate system curing agent, Lonza Japan can be enumerated（Strain）System " PT30 " and “PT60”（It is all phenol novolak type multifunctional cyanate ester resin）、“BA230”（Part or all of bisphenol A dicyanate Become the prepolymer of three amount bodies by triazine）Deng.

On the amount of epoxy resin and curing agent ratio, by [total number of the epoxy group of epoxy resin]：[the reaction of curing agent The total number of base] ratio, preferably 1：0.2~1：2 scope, more preferably 1：0.3~1：1.5, more preferably 1：0.4~ 1：1.It is active hydroxy, active ester groups etc. here, the reactive group of so-called curing agent, it is different according to the species of curing agent.This Outside, the total number of the epoxy group of so-called epoxy resin is by the solid state component quality of each epoxy resin divided by the value of epoxide equivalent Carry out total value to all epoxy resin, the total number of the reactive group of so-called curing agent, be by the solid-state of each curing agent into Sub-prime amount divided by the value of reactive group equivalent carry out all curing agent total value.By the amount for making epoxy resin and curing agent Than for such scope, so as to which the heat resistance of the solidfied material of resin combination can further improve.

In one embodiment, the resin combination used in the 1st hot curing resin composition layer includes above-mentioned Inorganic filling material, epoxy resin and curing agent.In resin combination, titanium dioxide is included preferably as inorganic filling material Silicon includes the mixture of liquid epoxy resin and solid-like epoxy resin as epoxy resin（It is preferred that liquid epoxy resin：Solid The mass ratio of shape epoxy resin is 1：0.1~1：4 scope, more preferably 1：0.3~1：3.5 scope, more preferably 1：0.6 ~1：3 scope, particularly preferably 1：0.8~1：2.5 scope）, included as curing agent from by phenol system curing agent, naphthols It is a kind or more of the group selection that curing agent, active ester system curing agent and cyanate system curing agent are formed（Preferably from by phenol It is a kind or more of the group selection that curing agent, naphthols system curing agent are formed, more preferably from by the phenol novolac containing triazine skeleton 1 kind or more of the group selection that resin, naphthols system curing agent are formed, more preferably includes the phenol novolacs containing triazine skeleton Curing agent）.On the resin combination that includes such specific ingredient of combining, although inorganic filling material, epoxy The preferred amount of resin and curing agent as described above, still, wherein, the amount of particularly preferred inorganic filling material is The mass % of 30 mass %~90, the amount of epoxy resin are the mass % of 3 mass %~50, and more preferable inorganic filling material contains The amount of having is the mass % of 50 mass %~90, the amount of epoxy resin is the mass % of 5 mass %~45.On containing for curing agent Amount, preferably so that the ratio of the total number of the reactive group of the total number and curing agent of the epoxy group of epoxy resin is 1：0.2~1：2 The mode of scope contains, and more preferably 1：0.3~1：1.5 scope, more preferably 1：0.4~1：1 scope.

As needed, resin combination can also include thermoplastic resin, curing accelerator, fire retardant and rubber granule The additives such as son.

- thermoplastic resin-

As thermoplastic resin, for example, phenoxy resin, polyvinyl acetal resin can be enumerated（polyvinyl acetal resin）, vistanex, polybutadiene, polyimide resin, polyamidoimide （polyamideimide）Resin, polyether sulfone（polyethersulfone）Resin, polyphenylene oxide resin and polysulfone resin etc..Heat Moldable resin can be used alone, alternatively, can also and with two or more.

It is preferred that the carry out polystyrene of thermoplastic resin（polystyrene）The weight average molecular weight of conversion is 8000 The scope of~70000 scope, more preferably 10000~60000, more there is the scope for electing 20000~60000 as.Thermoplasticity The weight average molecular weight gel permeation chromatography of the progress polystyrene conversion of resin（Gel Permeation Chromatography ：GPC）Method measures.Specifically, the progress polystyrene conversion on thermoplastic resin Weight average molecular weight can use（Strain）Shimadzu Seisakusho Ltd. LC-9A/RID-6A uses Showa electrician as measuring device （Strain）Shodex K-800P/K-804L/K-804L processed are as chromatographic column（column）, use chloroform（chloroform）Deng As mobile phase, measured at 40 DEG C of column temperature, the calibration curve of standard polystyren is used to calculate.

As phenoxy resin, for example, can enumerate with from by bisphenol A skeleton, Bisphenol F skeleton, bisphenol S skeleton, hexichol Phenol phenyl methyl ketone skeleton, phenolic aldehyde skeleton, biphenyl backbone, fluorene skeleton, bicyclopentadiene skeleton, norbornene （norbornene）Skeleton, naphthalene skeleton, anthracene skeleton, adamantane（adamantane）Skeleton, terpenes（terpene）Skeleton and three Methyl cyclohexylamine（trimethyl cyclohexane）The phenoxy resin of a kind or more of skeleton of the group selection that skeleton is formed. The end of phenoxy resin can be any functional group of phenol hydroxy, epoxy group etc..Phenoxy resin can be independent Using a kind, alternatively, can also and with two or more.As the specific example of phenoxy resin, Mitsubishi Chemical can be enumerated（Strain）System " 1256 " and " 4250 "（It is all the phenoxy resin containing bisphenol A skeleton）、“YX8100”（Benzene containing bisphenol S skeleton Oxygroup resin）And " YX6954 "（Contain biphenol phenyl methyl ketone（bisphenol acetophenone）The benzene of skeleton Oxygroup resin）, in addition, can also enumerate Nippon Steel and live aurification（Strain）" FX280 " and " FX293 ", the Mitsubishi Chemical of system （Strain）" YL7553 ", " YL6794 ", " YL7213 ", " YL7290 " and " YL7482 " of system etc..

As the specific example of polyvinyl acetal resin, can enumerate electrochemically industrial（Strain）The electrochemical butyral of system （butyral）4000-2,5000-A, 6000-C, 6000-EP, ponding chemical industry（Strain）The S-REC BH series of system, BX series, KS series, BL series, BM series etc..

As the specific example of polyimide resin, new Japan Chemical can be enumerated（Strain）" the RIKACOAT of system（Registrar Mark）SN20 " and " RIKACOAT PN20 ".In addition, the specific example as polyimide resin, can enumerate makes 2 functional hydroxyl groups Wire polyimides obtained from end polybutadiene, diisocyanate cpd and tetra-atomic acid anhydride are reacted（It is special It opens recorded in 2006-37083 publications）, containing polysiloxane（polysiloxane）The polyimides of skeleton（Special open Recorded in 2002-12667 publications and special open 2000-319386 publications etc.）Wait modified polyimides.

As the specific example of polyamide-imide resin, Japan's weaving can be enumerated（Strain）" the VYLOMAX HR11NN " of system " VYLOMAX HR16NN ".In addition, the specific example as polyamide-imide resin, can enumerate Hitachi's chemical conversion industry（Strain） The polyamidoimide " KS9100 " containing silicone matrix, modified polyamide imides such as " KS9300 " of system.

As the specific example of polyethersulfone resin, Sumitomo Chemical can be enumerated（Strain）" PES5003P " of system etc..

As the specific example of polysulfone resin, Su Wei high performance plastics Co., Ltd can be enumerated（Solvay advanced polymers）（Strain）The polysulfones " P1700 " of system, " P3500 " etc..

The amount of thermoplastic resin in preferred resin composition is the mass % of 0.1 mass %~20.By making heat The amount of moldable resin is such scope, becomes moderate so as to the viscosity of resin combination, can form thickness, bulk density （bulk）The uniform resin combination of character.The amount of thermoplastic resin in preferred resin composition is 0.5 mass % ~10 mass %.

- curing accelerator-

As curing accelerator, for example, phosphorus system curing accelerator, amine can be enumerated（amine）It is curing accelerator, imidazoles （imidazole）It is curing accelerator, guanidine（guanidine）It is curing accelerator etc., preferably phosphorus system curing accelerator, amine system are solid Change accelerating agent, imidazoles system curing accelerator, more preferable amine system curing accelerator, imidazoles system curing accelerator.

As phosphorus system curing accelerator, for example, triphenylphosphine can be enumerated（triphenylphosphine）, boric acid phosphide （phosphonium borate）Compound, tetraphenyl boron tetraphenylphosphonium （tetraphenylphosphoniumtetraphenylborate）, n- butyl boron tetraphenylphosphoniums（N- butylphosphoniumtetraphenylborate）, tetrabutyl phosphorus caprate,（4- methylphenols）Triphenyl phosphorus thiocyanic acid Ester（（4-methylphenyl）triphenylphosphonium thiocyanate）, tetraphenylphosphonium thiocyanates, butyl three Phenyl phosphorus thiocyanates etc., triphenylphosphine, tetrabutyl phosphorus caprate.

As amine system curing accelerator, for example, the trialkylamines such as triethylamine, tri-butylamine, 4- dimethylaminos can be enumerated Yl pyrimidines, benzyldimethylamine, 2,4（benzyldimethylamine）, 2,4,6 ,-three（Dimethylaminomethyl）Phenol, 1,8- Two nitrine are bicyclic（5,4,0）- endecatylene（undecane）Deng preferably 4- Dimethylaminopyrimidines, 1, bis- nitrine of 8- are bicyclic （5,4,0）- endecatylene.

As imidazoles system curing accelerator, for example, 2-methylimidazole, 2- undecyls can be enumerated（undecyl）Imidazoles, 2- heptadecyls（heptadecyl ）Imidazoles, 1,2- methylimidazoles, 2-ethyl-4-methylimidazole, 1,2- dimethyl Imidazoles, 2-ethyl-4-methylimidazole, 2- phenol imidazoles, 2- phenol -4-methylimidazole, 1- benzyl -2- methyl miaows Azoles, 1- benzyl -2- phenol imidazoles, 1- cyanoethyls（cyanoethyl）- 2-methylimidazole, 1- cyanoethyls -2- 11 Alkyl imidazole, 1- cyanoethyls -2-ethyl-4-methylimidazole, 1- cyanoethyl -2- phenol imidazoles, 1- cyanoethyls - 2- undecyl imidazole trimellitic acids salt, 1- cyanoethyl -2- phenol imidazoles trimellitic acids salt, 2,4- diamino -6- [2'- methylimidazolyls-（1'）]-ethyl-s-triazine, 2,4- diamino -6- [2'- undecyl imidazoles base - （1'）]-ethyl-s-triazine, 2,4- diamino -6- [2'- ethyl -4'- methylimidazolyls -（1'）]-ethyl- S- triazines, 2,4- diamino -6- [2'- methylimidazolyls -（1'）]-ethyl-s-triazine cyanuric acid adduct, 2- Phenol imidazoles cyanuric acid adduct, 2- phenol -4,5- bishydroxymethyls imidazoles, -5 hydroxymethyl of 2- phenol -4- methyl Imidazoles, 2,3- dihydro -1H- pyrrolo-es [1,2-a] benzimidazole, 1- dodecyl -2- methyl-3-benzyl imidazoles The adduction of the imidazolium compounds such as chloride, 2-methylimidazole quinoline, 2- phenol imidazolines and imidazolium compounds and epoxy resin Object, preferably 2-ethyl-4-methylimidazole, 1- benzyl -2- phenol imidazoles.

As guanidine system curing accelerator, for example, can enumerate dicyandiamide, 1- methylguanidines, 1- ethyl guanidines, 1- cyclohexyl guanidine, 1- phenol guanidine, 1-（O- tolyls）Guanidine, dimethylguanidine, biphenol guanidine, trimethyl guanidine, tetramethylguanidine, pentamethyl guanidine, 1,5, Bicyclic [4.4.0] the decyl- 5- alkene of tri- nitrine of 7-, 7- methyl-1s, bicyclic [4.4.0] the decyl- 5- alkene of 5,7- tri- nitrine, 1- Methyl biguanides, 1- ethyls biguanides, 1-n- butyl biguanides, 1-n- octadecyls biguanides, Metformin, 1,1- Diethyl biguanides, 1- cyclohexyl biguanides, 1- pi-allyls biguanides, 1- phenol biguanides, 1-（O- tolyls）Biguanides etc., preferably Dicyandiamide, 1, bicyclic [4.4.0] the decyl- 5- alkene of 5,7- tri- nitrine.

Curing accelerator can be used alone, and can also be used in combination of two or more.On consolidating in resin combination Change the amount of accelerating agent, preferably when the nonvolatile component total amount of epoxy resin and curing agent is set to 100 mass %, The scope of the mass % of 0.05 mass %~3 is used.

- fire retardant-

As fire retardant, for example, can enumerate organic phosphorus flame retardant, the phosphorus compound containing organic system nitrogen, nitrogen compound, Silicone flame retardant, metal hydroxides etc..Fire retardant can be used alone, alternatively, can also and with two or more.Though The amount of fire retardant in right resin composition layer is not particularly limited, however, it is preferred to be the mass % of 0.5 mass %~10, The mass % of the mass % of more preferably 1 mass %~9, more preferably 1.5 mass %~8.

- rubber particles-

As rubber particles, for example, can be used insoluble in aftermentioned organic solvent, also not with above-mentioned epoxy resin, solid The rubber particles that agent and thermoplastic resin etc. mix.In general, such rubber particles can be by by rubber constituent Molecular weight increase to the grade that will not be dissolved in organic solvent or resin and make particle shape and be modulated.

As rubber particles, for example, nucleocapsid can be enumerated（Core-shell）Type rubber particles, bridge formation acrylonitrile butadiene Rubber particles, bridge formation styrene butadiene ribber particle, acrylic rubber particle etc..Nucleocapsid type rubber particle be with stratum nucleare and The rubber particles of shell, for example, the shell that can enumerate outer layer is made of glassy polymers, the stratum nucleare of internal layer is by rubbery polymeric Object form 2 layer structures or outer layer shell be made of glassy polymers, interlayer is made of rubber-like polymer, stratum nucleare by Nucleocapsid type rubber grain of 3-tier architecture that glassy polymers is formed etc..Glassy polymeric nitride layer is for example by methyl methacrylate The compositions such as polymer, rubbery polymeric nitride layer is for example by butyl acrylate object（Butyl rubber）Deng composition.Rubber particles can To be used alone a kind, alternatively, can also and with two or more.

The average grain diameter of preferred rubber particle is 0.005 μm~1 μm of scope, more preferably 0.2 μm~0.6 μm of model It encloses.The average grain diameter of rubber particles can be measured using dynamic light scattering method.For example, can measure in the following manner, That is, using ultrasonic wave etc. rubber particles is made to be evenly dispersed in suitable organic solvent, uses dense system's granularmetric analysis device （FPAR-1000；Big tomb electronics（Strain）System）, with quality criteria make rubber particles size distribution, using in-between grain size as Average grain diameter.The amount of rubber particles in preferred resin composition is the mass % of 1 mass %~10, more preferably 2 matter Measure the mass % of %~5.

As needed, the resin combination used in the 1st hot curing resin composition layer can include other additions Agent, as such other additives, for example, organocopper compound, organic zinc compound and organic cobalt compounds can be enumerated Wait organo-metallic compounds and organic filler, tackifier, antifoaming agent, levelling agent（leveling agent）, close property assign Resin additives such as agent and colorant etc..

According to the thickness of the viewpoint, preferably the 1st hot curing resin composition layer of the slimming of component internally-arranged type circuit board It spends for less than 80 μm, more preferably less than 60 μm, more preferably less than 40 μm, more preferably less than 30 μm.1st Thermocurable tree The lower limit of the thickness of oil/fat composition layer is not particularly limited, and is usually 10 μm or more still.

Layer conformality during according to manufacture component internally-arranged type circuit board（It prevents from overflowing）Viewpoint, preferably the 1st heat cure Property resin composition layer lowest melt viscosity for 100 pool more than, more preferably 300 pool more than, more preferably 500 pool more than. The upper limit of the lowest melt viscosity of 1st hot curing resin composition layer is not particularly limited, however, it is preferred to for 10000 pool with Under, more preferably 8000 pools are following, and more preferably 6000 pools are following, and more preferably 4000 pools are following, particularly preferably 3000 pools Below.

Here, " lowest melt viscosity " of so-called hot curing resin composition layer, what is said is in heat-curing resin group The minimum viscosity that hot curing resin composition layer is presented when closing the resin melting of nitride layer.In detail, when with constant When heating rate heats hot curing resin composition layer and makes resin melting, in the starting stage, melt viscosity with It temperature to rise and reduce, hereafter, when more than some temperature, melt viscosity rises as temperature rises.So-called " most eutectic Melt-viscosity ", what is said is the melt viscosity of such minimal point.The lowest melt viscosity of hot curing resin composition layer can pass through Dynamic viscoelastic method measures.Specifically, the lowest melt viscosity of hot curing resin composition layer can be by opening in measurement Beginning temperature is 60 DEG C, heating rate is 5 DEG C/minute, vibration number 1Hz, shape become carrying out dynamic viscoelastic survey under conditions of 1deg It measures and obtains.As dynamic viscoelastic measuring device, for example, can enumerate（Strain）" Rheosol-G3000 " of UBM.

（2nd adhesive film）

2nd adhesive film includes the 2nd supporting mass and the 2nd hot curing resin composition layer engaged with the 2nd supporting mass.

The material and thickness of 2nd supporting mass can be identical with the material and thickness illustrated to above-mentioned 1st supporting mass.

The material of 2nd hot curing resin composition layer can be with carrying out above-mentioned 1st hot curing resin composition layer The material identical of explanation.

The viewpoint that is reduced according to the coefficient of thermal expansion of the insulating layer made and melt viscosity when preventing heat cure it is excessive It reduces and the viewpoint of the position offset of suppression component, in the resin combination for preferably comprising the 2nd hot curing resin composition layer Inorganic filling material amount for more than 30 mass %, the above are preferred, more preferably 50 matter by more preferably 40 mass % Measure more than %, more preferably more than 60 mass %, particularly preferably more than 62 mass %, more than 64 mass % or more than 66 mass %.It is special It, according to the viewpoint of the position offset of suppression component, is preferably more than 50 mass % not to be.It is strong according to the machinery of obtained insulating layer The viewpoint of degree and the viewpoint of imbedibility, the upper limit of the amount of the inorganic filling material in preferred resin composition is 90 mass % Hereinafter, below 85 mass % are more preferably.

According to the thickness of the viewpoint, preferably the 2nd hot curing resin composition layer of the slimming of component internally-arranged type circuit board It spends for less than 100 μm, more preferably less than 80 μm, more preferably less than 60 μm, more preferably less than 50 μm.Although the 2nd thermosetting The lower limit of thickness of the property changed resin composition layer also relies on thickness of internal substrate etc., still, according to the imbedibility of component and The viewpoint of chamber fillibility is usually 15 μm or more.

In a preferred embodiment, the 2nd hot curing resin composition layer is than the 1st hot curing resin composition Thickness.

The imbedibility of sufficient component and the viewpoint of chamber fillibility are realized according to when manufacturing component internally-arranged type circuit board, It is preferred that the lowest melt viscosity of the 2nd hot curing resin composition layer is following for 10000 pools, more preferably 8000 pools are following, more Preferably 6000 pools are following, and more preferably 4000 pools are following, and particularly preferably 3000 pools are following.According to manufacture component internally-arranged type cloth Layer conformality during line substrate（It prevents from overflowing）Viewpoint, preferably the 2nd hot curing resin composition layer lowest melt viscosity Lower limit for 100 pool more than, more preferably 300 pool more than, more preferably 500 pool more than.

Hereinafter, an example of the order of the 1st and the 2nd adhesive film of making is shown.

On adhesive film, either the 1st adhesive film or the 2nd adhesive film, for example, can make in the following way, i.e. adjust Resin combination is dissolved in the resin varnish of organic solvent by system, uses dip coater（die coater）It is applied Deng by the resin varnish It applies on supporting mass, dries resin varnish.

As organic solvent, for example, the ketones such as acetone, methyl ethyl ketone and cyclohexanone, ethyl acetate, acetic acid can be enumerated Butyl ester, cellosolve acetate（cellosolve acetate）, propylene glycol methyl ether acetate（propylene glycol monomethylether acetate）And carbitol acetate（carbitol acetate）Etc. acetates, cellosolve with And aromatic series carbons hydrogen species, dimethylformamide, the dimethyl acetamide such as the carbitols such as butyl carbitol class, toluene and dimethylbenzene And amine series solvents such as N-Methyl pyrrolidone etc..Organic solvent can be used alone, alternatively, can also and with two kinds with On.

The drying of resin varnish can be implemented by heating, spraying the well-known drying means such as hot wind.Although root It is different according to the boiling point of the organic solvent in resin varnish, still, for example using comprising 30 mass %~60 mass % it is organic In the case of the resin varnish of solvent, by 3 minutes~10 minutes dry at 50 DEG C~150 DEG C, so as on supporting mass Form hot curing resin composition layer.

On adhesive film, either the 1st adhesive film or the 2nd adhesive film, not with hot curing resin composition layer The face of supporting mass engagement（That is, the face of side opposite with supporting mass）, protective film can also be included.Protective film is to preventing the attachments such as dust To the surface of hot curing resin composition layer or prevent scratch from contributing.As the material of protective film, can use with it is right The material for the material identical that supporting mass illustrates.The thickness of protective film is not particularly limited, and is, for example, 1 μm~40 μm.On Adhesive film when manufacturing component internally-arranged type circuit board, can be used by peelling off protective film.

More than, though it is shown that an example of the order of the 1st and the 2nd adhesive film is made, still, as long as the 1st can be obtained With the 2nd adhesive film, above-mentioned order is just not limited to.For example, hot curing resin composition layer can be formed on protective film Afterwards, it is stacked supporting mass on the hot curing resin composition layer and makes adhesive film.So-called in the present invention " supporting mass ", That say is the master for being layered in internal substrate together with hot curing resin composition layer when manufacturing component internally-arranged type circuit board The component in face, the supporting member of resin varnish when restrictively not representing to manufacture adhesive film.

Hereinafter, the manufacturer of the component internally-arranged type circuit board of the present invention is explained in detail with reference to its preferred embodiment Method.

In the method for the 1st embodiment of the present invention, using circuit substrate as internal substrate.Thus, it is of the invention The method of 1st embodiment includes following processes in order（A1）、（B1）、（C1）And（D1）：

（A1）In a manner of the 1st hot curing resin composition layer to be made to be engaged with the 1st interarea of circuit substrate, the 1st is glued Connect the vacuum laminated process in circuit substrate of film, wherein, the circuit substrate has the 1st and the 2nd interarea, be formed with perforation this Chamber between 1 and the 2nd interarea, the 1st adhesive film include the 1st supporting mass and the 1st heat cure engaged with the 1st supporting mass Property resin composition layer；

（B1）Component is assembled to the process in the 1st hot curing resin composition layer of intracavitary temporarily；

（C1）In a manner of the 2nd hot curing resin composition layer to be made to be engaged with the 2nd interarea of circuit substrate, the 2nd is glued The process for connecing vacuum laminated the 2nd interarea in circuit substrate of film is bonded the heating temperature of film surface than the 2nd adhesive film table the 1st Carried out under conditions of the heating temperature in face is low it is vacuum laminated, wherein, the 2nd adhesive film includes the 2nd supporting mass and with the 2 2nd hot curing resin composition layer of supporting mass engagement；

（D1）The process for making the 1st and the 2nd hot curing resin composition layer heat cure and forming insulating layer.

Hereinafter, while with reference to Fig. 4 A to Fig. 4 G, while being said to each process of the method for the 1st embodiment of the present invention It is bright.

- process（A1）-

In process（A1）In, so that the 1st hot curing resin composition layer 102 was engaged with the 1st interarea of circuit substrate Mode is being formed with the circuit substrate 11 ' of chamber by the 1st adhesive film 100 is vacuum laminated（Fig. 4 A）.

Be formed with chamber circuit substrate 11 ' and the 1st adhesive film 100 structure as previously described.

On the 1st adhesive film 100 to be formed with chamber circuit substrate 11 ' it is vacuum laminated, such as can be in the following manner It carries out, i.e. under lower pressure, the heating of the 1st adhesive film 100 is crimped on to the circuit base for being formed with chamber from 101 side of the 1st supporting mass Plate 11 '.As the component that the heating of the 1st adhesive film 100 is crimped on to the circuit substrate 11 ' for being formed with chamber（It is not shown；Hereinafter, Referred to as " heating crimping component "）, such as the metallic plate after heating can be enumerated（SUS runner plates etc.）Or metallic roll（SUS rollers）Deng.Separately Outside, be not that heating crimping component is directly embossed in the 1st adhesive film 100, but preferably via heat resistant rubber elastomeric material into Row molding so that the 1st adhesive film 100, which fully follows, results from wiring 13, the chamber of the circuit substrate 11 ' for being formed with chamber The bumps of 12a.

It is preferred that the scope for the scope, more preferably 70 DEG C~140 DEG C that heating crimping temperature is 60 DEG C~160 DEG C, more preferably For 80 DEG C~130 DEG C of scope, the scope that crimping pressure is 0.098MPa~1.77MPa, more preferably 0.29MPa are preferably heated The scope of the scope of~1.47MPa, more preferably 0.40MPa~1.10MPa, preferably heating crimping time are 10 seconds~400 seconds Scope, the more preferably scope of 20 seconds~300 seconds, more preferably 20 seconds~200 seconds scope.It is it is preferred that vacuum laminated in pressure Implement under the reduced pressure of below 26.7hPa.In addition, so-called heating crimping temperature, what is said is the surface temperature of heating crimping component Degree, in the case where being molded via heat resistant rubber elastomeric material, what is said is the elastic material engaged with the 1st adhesive film Surface temperature.

It is vacuum laminated to be carried out using the vacuum laminator that market is sold.As the vacuum laminator of market sale, example Such as, can enumerate（Strain）Name mechanism makees made vacuum pressure type laminating machine, Nichigo-Morton（Strain）The vacuum plant of system （vaccum applicator）Deng.

In such process（A1）In, circuit substrate 1 ' of the 1st hot curing resin composition layer 102 with being formed with chamber 1st interarea engages（Fig. 4 B）.At this point, the 1st hot curing resin composition layer 102 will be formed in the 1st interarea of circuit substrate The circuits such as surface wiring 13 are embedded to, and also fill up a part of region in chamber 12a（Fig. 4 B）.It hereinafter, will be by the 1st heat cure Property resin composition layer 102 fill chamber 12a in region be known as " resin filling region ", beyond the resin filling region Region in chamber 12a（That is, the region in chamber 12a do not filled by the 1st hot curing resin composition layer 102）Referred to as " non-tree Fat filling region ".

In process（A1）In, the height h of the chamber of the circuit substrate before preferably vacuum laminated 1st adhesive film_A（Fig. 4 A）With The height h of the non-resin filling region of the chamber of circuit substrate after vacuum laminated 1st adhesive film_B（Fig. 4 B）Meet 0.8h_A≤h_B ≤h_ARelation, more preferably meet 0.85h_A≤h_B≤h_ARelation, more preferably meet 0.90h_A≤h_B≤h_ARelation, it is special 0.95h You Xuanwei not met_A≤h_B≤h_ARelation.In h_B<0.8h_AIn the case of, there is following tendency, i.e. in aftermentioned process （B1）During middle set parts, the resin of resin filling region easily moves, it is difficult to assemble component in desired position temporarily.Into And component easily becomes prominent state to outside chamber, in aftermentioned process（C1）Middle pressure concentrates on component and becomes easily to produce The position offset of raw component.Pass through h_AWith h_BMeet above-mentioned relation, even if so as to when using thin circuit substrate, also ensure that For the sufficient space of build-in components, and can validity suppression component position offset.

In process（A1）In, it, can also be when to the 1st adhesive film and when being formed with the circuit substrate of chamber and carrying out vacuum laminated The 2nd interarea for being formed with the circuit substrate of chamber is provided with protective film.As protective film, it can use and be used in the prior art The membranaceous interim fabricated material assembled temporarily of component, for example, the UC series of The Furakawa Electric Co., Ltd. can be enumerated （Wafer slice UV bands）.In the case where the 2nd interarea for being formed with the circuit substrate of chamber is provided with protective film, on the base Plate, in process（A1）Afterwards, as long as process can be used in by removing protective film（B1）.

In addition, on the 1st supporting mass, as long as by conductor layer（Wiring）Being arranged at makes the 1st heat-curing resin group It is removed before closing the process of insulating layer obtained from nitride layer cures, for example, both can be in aftermentioned process（C1）With Process（D1）Between remove, can also be in aftermentioned process（D1）It removes afterwards.In a preferred embodiment, the 1st supporting mass In aftermentioned process（D1）It removes afterwards.In addition, in the case where using the metal foils such as copper foil as the 1st supporting mass, such as rear institute It states, since conductor layer can be set using such metal foil（Wiring）, so the 1st supporting mass can not also be removed.

- process（B1）-

In process（B1）In, component 15 is assembled into the 1st hot curing resin composition layer 102 in chamber 12a temporarily（Figure 4C）.That is, component 15 is assemblied in the 1st hot curing resin composition layer 102 exposed in chamber 12a temporarily.

As component 15, appropriate electric component can be selected according to required characteristic, for example, can enumerate capacitor, The active parts such as the passive components such as inductor, resistance, semiconductor bare chip.Both identical component can be used in all chambers 15, different components 15 can also be used by each chamber.

As previously mentioned, in the prior art, use the interim assembling material removed and be removed in subsequent process Expect to carry out the interim assembling of component.In this art, interim fabricated material is removed to component when removing in order to prevent Come off, the position offset of the component of intracavitary, side opposite with the interarea for being provided with interim fabricated material interarea set thermosetting The property changed resin composition layer, after intracavitary is filled with hot curing resin composition, makes the heat-curing resin group It closes object heat cure and forms firming body（Insulating layer）.However, in this art, in order to reach component internally-arranged type circuit board Miniaturization, slimming and use the high circuit substrate of chamber density, thickness thin circuit substrate when, sometimes in circuit The interarea of the folk prescription of substrate forms in the stage of insulating layer and generates substrate warp.On the other hand, in the present invention, component is faced When be assemblied in later become insulating layer hot curing resin composition layer.Thus, in the present invention, it need not remove and remove Interim fabricated material can advantageously solve the problems, such as the substrate warp associated with the prior art.

In process（B1）In, result from intracavitary the 1st hot curing resin composition layer surface adhesion, component is by this 1st hot curing resin composition layer is kept.According to the sight of the adhesiveness on the surface of the 1st hot curing resin composition layer Point, preferably implements process in a heated condition（B1）.As the method for heating, such as can enumerate supports heater and the 1st The method that body is engaged and heated.Heater both can directly be engaged with the 1st supporting mass, can also be via foregoing heat-resisting Rubber elastomeric material is engaged with the 1st supporting mass.

As long as the surface of the 1st hot curing resin composition layer of intracavitary can embody sufficient adhesiveness, process（B1）In Heating condition be just not particularly limited.In a preferred embodiment, according to the 1st hot curing resin composition layer The viewpoint of adhesiveness, preferable process（B1）In heating temperature for 60 DEG C or more, more preferably 70 DEG C or more, more preferably 80 DEG C More than, more preferably 90 DEG C or more.According to preventing, inhibit to result from the cured substrate of the 1st hot curing resin composition layer The upper limit of the viewpoint of warpage, preferably heating temperature is less than 140 DEG C, more preferably less than 135 DEG C, more preferably less than 130 DEG C. So-called process（B1）In heating temperature, say be from the 1st supporting side heated using heater in the case of, should The surface temperature of heater.

On process（B1）In heating time, as long as the sufficient time for interim build-up member, preferably For 2 seconds or more, more preferably 3 seconds or more, more preferably 4 seconds or more.The upper limit of heating time can be usually set to less than 60 seconds.

It is preferred that under atmospheric pressure（Under normal pressure）Carry out process（B1）In heating.

In a preferred embodiment, preferably in process（B1）In the obtained warpage of substrate be below 25mm, more preferably For below 20mm, more preferably below 15mm, more preferably below 10mm, particularly preferably below 5mm.In addition, so-called substrate Warpage, it is meant that be fixed on process with setting tool（B1）In obtained one side of substrate and compared with ground（Horizontal plane）It hangs down The arithmetic average of the vertical height at the both ends of the opposite side of the substrate away from imaginary vertical plane when directly slinging.Specifically, base The warpage of plate can be measured by the measuring method recorded in embodiment.

It can also be in process（B1 the 1st hot curing resin composition layer is further heated after).Can further it press down as a result, Make aftermentioned process（C1）In component position offset.Thus, in a preferred embodiment, method of the invention is in process （B1）And process（C1）Between include（B1’）The process for heating the 1st hot curing resin composition layer.

According to inhibition process（C1）In component position offset viewpoint, preferable process（B1’）In heating temperature be 80 DEG C or more, more preferably 90 DEG C or more, more preferably 100 DEG C or more.According to preventing, inhibit to result from the 1st Thermocurable tree The viewpoint of the cured substrate warp of oil/fat composition layer, the preferably upper limit of heating temperature are more preferably 140 DEG C less than 150 DEG C Hereinafter, less than 130 DEG C, more preferably less than 120 DEG C are more preferably.

According to inhibition process（C1）In component position offset viewpoint, preferable process（B1’）In heating time be 30 seconds or more, more preferably 1 minute or more, more preferably 3 minutes or more, more preferably 5 minutes or more, 10 minutes or more or 20 Minute or more.According to prevent, inhibit to result from the 1st hot curing resin composition layer cured substrate warp viewpoint, add The upper limit of hot time can be usually set to less than 60 minutes.

It is preferred that under atmospheric pressure（Under normal pressure）Carry out process（B1’）In heating.

Implement process in a heated condition（B1）In the case of, in process（B1）Afterwards, process can be both transferred directly to （B1’）, circuit substrate can also be cooled to room temperature（Room temperature）Process is transferred to afterwards（B1’）.

- process（C1）-

In process（C1）In, so that the 2nd hot curing resin composition layer 202 was engaged with the 2nd interarea of circuit substrate Mode, by 200 vacuum laminated the 2nd interarea in circuit substrate of the 2nd adhesive film（Fig. 4 D）.

In such process（C1）In, the 2nd hot curing resin composition layer 202 is filled into chamber 12a, is assemblied in temporarily Component 15 in chamber 12a is embedded to the 2nd hot curing resin composition layer 202（Fig. 4 E）.

According to the viewpoint of the position offset of suppression component, film surface is bonded than the 2nd in the heating temperature of the 1st bonding film surface Heating temperature it is low under conditions of implement process（C1）It is important.

The heating temperature of 1st bonding film surface is being set to T₁（℃）, by the 2nd bonding film surface heating temperature be set to T₂ （℃）When, according to the viewpoint of the position offset of suppression component, preferably T₁And T₂Meet T₂-40≤T₁≤T₂- 10 relation, more preferably Meet T₂-40≤T₁≤T₂- 15 relation, more preferably meets T₂-35≤T₁≤T₂- 15 relation, more preferably meets T₂-35≤T₁ ≤T₂- 20 relation.

According to the imbedibility and the viewpoint of chamber fillibility for realizing sufficient component, the heating temperature of the preferably the 2nd bonding film surface Spend T₂For 120 DEG C or more, more preferably 125 DEG C or more, more preferably 130 DEG C or more, 135 DEG C or more, 140 DEG C or more or 145 DEG C or more.According to the viewpoint of the position offset of suppression component, preferably T₂The upper limit for less than 200 DEG C, be more preferably 180 DEG C with Under.

Heating temperature T on the 1st bonding film surface₁As long as T₁And T₂Meet above-mentioned relation to be just not particularly limited, but It is, according to the viewpoint of the position offset of suppression component, preferably less than 140 DEG C, more preferably less than 135 DEG C, more preferably 130 Below DEG C, particularly preferably less than 125 DEG C, less than 120 DEG C or less than 115 DEG C.On T₁Lower limit, as long as T₁And T₂In satisfaction It states relation to be just not particularly limited, can usually be set to 60 DEG C or more.

In the present invention, the heating temperature T of so-called 1st bonding film surface₁（℃）, what is said is that film surface Nian Jie with the 1st connects Conjunction heating crimping component surface temperature, in the case where being molded via heat resistant rubber elastomeric material, say be with The temperature on the surface of the elastic material of the 1st adhesive film engagement.In addition, the heating temperature T of so-called 2nd bonding film surface₂（℃）, What is said is the surface temperature of the heating crimping component of Nian Jie with the 2nd film surface engagement, via heat resistant rubber elastomeric material into In the case of row molding, what is said is the temperature on the surface of the elastic material engaged with the 2nd adhesive film.

On process（C1）In the 2nd adhesive film 200 it is vacuum laminated, in addition to above-mentioned temperature conditionss, may be employed With process（A1）In the 1st adhesive film vacuum laminated identical method, condition.For example, stomata is generated according to inhibition（void） Viewpoint, preferable process（C1）In pumpdown time for 20 seconds or more, more preferably 30 seconds or more, 40 seconds or more, 50 seconds with It is upper or 60 seconds or more.Particularly, process is being implemented（A1）Afterwards until implementing process（C1）Until during elapsed time compared with It, can be by by process in the case of length（C1）In pumpdown time be set to it is longer（For example, 30 seconds or more, 40 seconds or more, 50 Second or more or 60 seconds or more）And it effectively inhibits and generates stomata in a insulating layer.

In process（C1）In, according to the viewpoint of the position offset of suppression component, preferably the 1st hot curing resin composition layer Melt viscosity maintain more than 2000 pools, more preferably maintain more than 3000 pools, more preferably maintain more than 4000 pools, More preferably maintain more than 5000 pools, particularly preferably maintain more than 6000 pools, 7000 pools are above, 8000 pools are above, More than 9000 pools or more than 10000 pools.By using above-mentioned temperature conditionss, realized so as to one side and utilize the 2nd Thermocurable The imbedibility of the sufficient component of resin composition layer and chamber fillibility, while melting the 1st hot curing resin composition layer Melt-viscosity is maintained such scope.Process（C1）In the upper limit of melt viscosity of the 1st hot curing resin composition layer do not have It is particularly limited to, is usually that 1000000 pools are following.

On process（C1）In the 1st hot curing resin composition layer melt viscosity, can be by temperature T₁（℃） Lower progress dynamic viscoelastic is measured from.The measuring device that can be used in the measurements is as described above.

The structure of 2nd adhesive film 200 is as previously described.In addition, in process（C1）The 2nd of middle the 2nd adhesive film 200 used Hold body 201 both can in process（A1）1st supporting mass 101 of middle the 1st adhesive film 100 used is identical, can not also be same.

In addition, for the 2nd hot curing resin composition layer resin combination both can with for the 1st Thermocurable tree The resin combination of oil/fat composition layer is identical, can not also be same.

According to use later become insulating layer hot curing resin composition layer（That is, the 1st hot curing resin composition Layer）The method of the present invention of interim fabricated material as component, even if in order to reach the small-sized of component internally-arranged type circuit board In the case of the thin circuit substrate of change, the circuit substrate for being thinned and using chamber density high, thickness, it can also inhibit substrate warp It generates.Accordingly, it is capable to not to from process（B1）To process（C1）Until substrate transmission cause it is successfully real in the case of obstacle Construction sequence（C1）.And then implement process under above-mentioned specific temperature conditionss（C1）The present invention in, moreover it is possible to inhibit and process （C1）Vacuum laminated associated component position offset, the outstanding portion of configuration precision of component can be realized with good yield rate Part internally-arranged type circuit board.

It is preferred that in process（C1）It carries out afterwards by under normal pressure（Under atmospheric pressure）Such as from 202 side of the 2nd supporting mass or Heating crimping component is molded from 102 side of the 1st supporting mass and this both sides of 202 side of the 2nd supporting mass and the 1st after stacking is glued The process that the face in the face and the 2nd adhesive film side that connect film side is smoothed（Hereinafter also referred to as " process（C1’）”.）.Thus, In preferred embodiment, the method for the 1st embodiment of the invention is in process（C1）With process（D1）Between include by plus The process that hot moulding smooths the face of the 1st adhesive film side and the face of the 2nd adhesive film side.Process（C1’）Mold pressing parameter It can be set to and above-mentioned operation（C1）In the identical condition of heating crimping condition.

Process（C1’）It can be carried out by the laminating machine that market is sold.It is sold alternatively, it is also possible to use above-mentioned market Carry out process to vacuum laminator continuity（C1）And process（C1’）.

In a preferred embodiment, in process（C1）（And process（C1’））In, the position offset deficiency of component 40μm.Here, the position offset of so-called component, what is said is in process（B1）In be assemblied in temporarily the 1st heat-curing resin combination The center of the component of the time point of nitride layer in process（C1）In after vacuum laminated 2nd hot curing resin composition layer（In reality Construction sequence（C1’）In the case of, it is after smoothing techniques are carried out）Component center change in location.Specifically, portion The position offset of part can be measured by the measuring method recorded in embodiment.

In addition, on the 2nd supporting mass 201, as long as by conductor layer（Wiring）Being arranged on makes the 2nd heat-curing resin It is removed before the process of insulating layer obtained from composition layer cures, for example, both can be in process（C1）With it is aftermentioned Process（D1）Between remove, can also be in aftermentioned process（D1）It removes afterwards.In a preferred embodiment, rear The process stated（D1）The 2nd supporting mass is removed afterwards.In addition, in the case where using the metal foils such as copper foil as the 2nd supporting mass, such as It is described afterwards, since conductor layer can be set using such metal foil（Wiring）, so the 2nd supporting can not also be removed Body.

- process（D1）-

In process（D1）In, make the 1st and the 2nd hot curing resin composition layer heat cure and form insulating layer.As a result, 1 hot curing resin composition layer 102 forms insulating layer 102 ', and the 2nd hot curing resin composition layer 202 forms insulating layer 202’（Fig. 4 F）.

The condition of heat cure is not particularly limited, and can use the generally use when forming the insulating layer of printed wiring board Condition.

Although for example, the heat cure condition of the 1st and the 2nd hot curing resin composition layer is according to for each Thermocurable tree Composition of the resin combination of oil/fat composition layer etc. and it is different, but it is possible to which solidification temperature to be set to 120 DEG C~240 DEG C of scope （The scope of preferably 150 DEG C~210 DEG C of scope, more preferably 170 DEG C~190 DEG C）, 5 minutes~90 will be set to hardening time The scope of minute（Preferably 10 minutes~75 minutes, more preferably 15 minutes~60 minutes）.

Can also before heat cure at a temperature of lower than solidification temperature to the 1st and the 2nd hot curing resin composition Layer is preheated.It for example, can be before heat cure, at 50 DEG C or more, less than 120 DEG C（Preferably 60 DEG C or more, 110 DEG C Hereinafter, 70 DEG C or more, less than 100 DEG C are more preferably）At a temperature of, the 1st and the 2nd hot curing resin composition layer is carried out pre- Heating 5 minutes or more（Preferably 5 minutes~150 minutes, more preferably 15 minutes~120 minutes）.Carrying out pre-warmed feelings Under condition, such preheating is made also to be included in process（D1）.

It is preferred that under atmospheric pressure（Under normal pressure）Carry out process（D1）In the 1st and the 2nd hot curing resin composition layer Heat cure.

It is preferred that implement process in a state that substrate is maintained approximate horizontal（D1）.For example, it is preferable in the thickness of substrate Axis on direction implements process in the state of with respect to the horizontal plane becoming 80 °~100 ° of scope（D1）.

As previously mentioned, it is preferred that in process（D1）The the 1st and the 2nd supporting mass is removed afterwards.Thus, in process（D1）In, preferably The the 1st and the 2nd hot curing resin composition layer is made to carry out heat cure in the state of with the 1st and the 2nd supporting mass.As a result, can Obtain the insulating layer on the surface with low roughness.

It, can be in process in a preferred embodiment（C1）With process（D1）Between implement to cool down circuit substrate To room temperature（Room temperature）Processing.

In addition, in the following description, the 1st hot curing resin composition layer 102 will be made to carry out heat cure and obtain sometimes The insulating layer 102 ' arrived is known as " the 1st insulating layer ".In addition, the 2nd hot curing resin composition layer 202 will be made to carry out thermosetting sometimes Insulating layer 202 ' obtained from change is known as " the 2nd insulating layer ".

- other process-

The method of the 1st embodiment of the present invention can further include（E1）The process of progress perforate,（F1）On the insulating layer The process for forming conductor layer.These processes（E1）With（F1）Can according to it is being used in the manufacture of printed wiring board, to ability Well-known various methods are implemented for field technique personnel.In addition, in process（D1）The the 1st and the 2nd supporting mass is removed afterwards In the case of, it can be in process（D1）With process（E1）Between or in process（E1）And process（F1）Between implement the 1st and the 2nd The stripping of supporting mass.

Process（E1）It is the process for carrying out perforate.The holes such as guide hole and through hole can be formed as a result,.In a preferred embodiment party In formula, process（E1）It is included in the 1st and the 2nd insulating layer and forms guide hole.For example, drill bit, laser, plasma etc. can be used the 1 and the 2nd insulating layer forms guide hole.

According to the viewpoint that surface of insulating layer can be protected when forming hole, preferably implement before the 1st and the 2nd supporting mass is removed Process（E1）.In this case, for example, laser can be irradiated from supporting mass and formed guide hole and by wait holes.In addition, It can be used for the purpose of improving Laser Processing property containing the Wavelength matched laser light absorbing material with used laser Supporting mass.Opening diameter, the opening shape in the holes such as guide hole and through hole can suitably be determined according to the design of wiring.

By laser formed hole in the case of, as laser light source, for example, carbon dioxide laser can be enumerated, YAG swashs Light device, excimer laser etc..Wherein, according to process velocity, the viewpoint of cost, particularly preferred carbon dioxide laser.

Process（F1）It is the process for forming conductor layer on the insulating layer.

The conductor material used in conductor layer is not particularly limited.In a preferred embodiment, conductor layer include from By a kind or more of metal of the group selection that gold, platinum, palladium, silver, copper, aluminium, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium are formed. Conductor layer is either elemental metals layer or alloy-layer, as alloy-layer, such as can enumerate by from above-mentioned group selection Two or more metals alloy（For example, nichrome, corronil and copper-titanium alloy）The layer of formation.Wherein, according to The viewpoints such as versatility, cost, the easiness of composition that conductor layer is formed, particularly preferred chromium, nickel, titanium, aluminium, zinc, gold, palladium, silver or Elemental metals layer or nickel-chromium alloy, copper-nickel alloy, the alloy-layer of copper-titanium alloy of copper, more preferable chromium, nickel, titanium, aluminium, zinc, Gold, palladium, silver or the elemental metals layer of copper or the alloy-layer of nickel-chromium alloy, the elemental metals layer of more preferable copper.

Conductor layer can be single layer structure or be laminated with more than two layers by different types of metal or alloy structure Into elemental metals layer or alloy-layer multilayer structure.In the case where conductor layer is multilayer structure, preferably connect with insulating layer Layer be the elemental metals layer of chromium, zinc or titanium or the alloy-layer of nickel-chromium alloy.

Although the thickness of conductor layer depends on the design of required component internally-arranged type circuit board, generally 3 μm~35 μm, it is preferably 5 μm~30 μm.

In one embodiment, process（F1）Including on the insulating layer to insulating layer progress roughening treatment and after roughening Conductor layer is formed by plating.

Order, the condition of roughening treatment are not particularly limited, and can use the crowd usually used when manufacturing printed wiring board Well known order, condition.For example, the swelling process carried out using swelling liquid can be implemented in order, utilize oxidant progress Roughening treatment carries out roughening treatment using the neutralisation treatment that neutralizer carries out to the 1st and the 2nd insulating layer.Do not have as swelling liquid It is particularly limited to, aqueous slkali, interfacial activity agent solution etc. can be enumerated, preferably aqueous slkali, as the aqueous slkali, more preferably hydrogen Sodium hydroxide solution, calcium hydroxide solution.As the swelling liquid of commercial type, for example, ATOTECH JAPAN can be enumerated（Strain）System Swelling Dip Securiganth P, Swelling Dip Securiganth SBU etc..It is carried out using swelling liquid Swelling process is not particularly limited, for example, can be by the way that the 1st and the 2nd insulating layer is immersed in 30~90 DEG C of swelling liquid 1 minute It carries out within~20 minutes.According to the viewpoint inhibited the swelling of the resin of the 1st and the 2nd insulating layer in moderate grade, preferably make 1st and the 2nd insulating layer is immersed in 40~80 DEG C of swelling liquid 5 seconds~15 minutes.It as oxidant, is not particularly limited, example Such as, the alkalescence mangaic acid solution excessively that calcium permanganate or sodium permanganate have been dissolved in the aqueous solution of sodium hydroxide can be enumerated.On profit Cross the roughening treatment that the oxidants such as mangaic acid solution carry out with alkalescence, preferably make the 1st and the 2nd insulating layer be immersed in be heated to 60 DEG C~ It carries out within 10 minutes~30 minutes in 80 DEG C of oxidizing agent solution.Furthermore it is preferred that alkalescence crosses the permanganate in mangaic acid solution Concentration is the mass % of 5 mass %~10.As the oxidant of commercial type, for example, ATOTECH JAPAN can be enumerated（Strain）System The alkalescence such as Concentrate Compact CP, Dosing Solution Securiganth P cross mangaic acid solution.In addition, As neutralizer, preferably acid aqueous solution, as market merchandising, for example, ATOTECH JAPAN can be enumerated（Strain）System Reduction Solution Securiganth P.The processing carried out using neutralizer can be by making to utilize oxidizing agent solution The process face for carrying out roughening treatment is immersed in 30~80 DEG C of neutralizer 5 minutes~30 minutes to carry out.From the side such as workability Face considers, is preferably immersed in the object that roughening treatment is carried out using oxidizing agent solution in 40~70 DEG C of neutralizer 5 minutes The method of~20 minutes.

On the forming method of conductor layer, as long as the conductor layer with required pattern can be formed（Wiring）, just do not have It is particularly limited to.For example, half addition can be passed through（semiadditive）Method, full addition（full additive）Method etc. is previous many Well known technology carries out plating to the surface of the 1st and the 2nd insulating layer and forms the conductor layer with required pattern（Circuit cloth Line）.Hereinafter, the example by semi-additive process formation conductor layer is shown.

First, the surface for the 1st and the 2nd insulating layer being overlayed on by electroless plating forms plating Seed Layer.Next, it is being formed Plating Seed Layer on form the mask pattern for accordingly exposing a part for plating Seed Layer with required wiring pattern.It is logical It crosses electrolytic coating to be formed after metal layer in the plating Seed Layer of exposing, removes mask pattern.Hereafter, can be removed by etching etc. Unwanted plating Seed Layer is gone, forms the conductor layer with required pattern.

It, can also be by using the metal foil in the case where using the metal foils such as copper foil as the 1st and the 2nd supporting mass It is refined（subtractive）Method etc. forms conductor layer.In addition it is also possible to using metal foil as plating Seed Layer, plated by being electrolysed It covers to form conductor layer.

By these processes conductor is also formed in the holes such as guide hole（Wiring）, be arranged on the 1st and the 2nd insulating layer 102 ' and The wiring 13 on 202 ' surface, the wiring of circuit substrate and component are electrically connected, and obtain component internally-arranged type electricity Road plate 1000（Fig. 4 G）.In addition, as long as electrical connection can be realized, the inside in the holes such as guide hole need not be just filled with conductor, The thin layer of conductor can be formed in a manner of the wall surface for coating hole.

In addition, the method for the 1st embodiment of the present invention can also include（G1）Component internally-arranged type circuit board is carried out a The process of piece.

In process（G1）In, for example, can will be ground by possessing the former well-known cutter device of rotates blade Structure piece obtained from cutting turns to component internally-arranged type circuit board unit one by one.

More than, although the method for the 1st embodiment of the present invention is illustrated with reference to preferred embodiment, It is, as long as including above-mentioned operation（A1）Extremely（D1）Each process, and process（A1）Extremely（D1）Each process according to this order come Implement, the method for the 1st embodiment of the invention is just not limited to the above-mentioned embodiment specifically illustrated.For example, process（G1） It can be in process（C1）With process（D1）Between, process（D1）With process（E1）Between or process（E1）With process（F1）Between into Row.In addition it is also possible to repeat process（A1）Extremely（F1）, seek further multilayer wiring.In the 1st embodiment of the present invention Method in, it may be considered that many variations.

In the method for the 2nd embodiment of the present invention, using insulated substrate as internal substrate.

As previously mentioned, when manufacturing component internally-arranged type circuit board, circuit substrate generally is used as internal substrate.Make In by the use of circuit substrate as the embodiment of internal substrate, in general, by configuring component in the inside of circuit substrate, connect Get off to stack gradually insulating layer, conductor layer, so as to which the component internally-arranged type circuit board for possessing multilayer wiring can be obtained.On this Point, sometimes according to electronic equipment, using the circuit board that circuit is formed on the two sides of insulated substrate（2 layers of circuit board）.This The inventor of invention expects, in this case, by component configuration in the inside of insulated substrate, next, forming insulating layer And conductor layer, the 2 layers of circuit board that thus obtains higher function and can be minimized.

Thus, the method for the 2nd embodiment of the invention includes following processes in order（A2）、（B2）、（C2）And （D2）：

（A2）In a manner of the 1st hot curing resin composition layer to be made to be engaged with the 1st interarea of insulated substrate, the 1st is glued Connect the vacuum laminated process in insulated substrate of film, wherein, the insulated substrate has the 1st and the 2nd interarea, be formed with perforation this Chamber between 1 and the 2nd interarea, the 1st adhesive film include the 1st supporting mass and the 1st heat cure engaged with the 1st supporting mass Property resin composition layer；

（B2）Component is assembled to the process in the 1st hot curing resin composition layer of intracavitary temporarily；

（C2）In a manner of the 2nd hot curing resin composition layer to be made to be engaged with the 2nd interarea of insulated substrate, the 2nd is glued The process for connecing vacuum laminated the 2nd interarea in insulated substrate of film is bonded the heating temperature of film surface than the 2nd adhesive film table the 1st Carried out under conditions of the heating temperature in face is low it is vacuum laminated, wherein, the 2nd adhesive film includes the 2nd supporting mass and with the 2 2nd hot curing resin composition layer of supporting mass engagement；

（D2）The process for making the 1st and the 2nd hot curing resin composition layer heat cure and forming insulating layer.

Process in the 2nd embodiment of the present invention（A2）、（B2）、（C2）And（D2）Except using insulated substrate conduct Beyond the internal substrate this point of build-in components, substantially with the present invention the 1st embodiment in process（A1）、（B1）、（C1）And（D1）It corresponds to respectively.To the process in the method for the 1st embodiment of the present invention（A1）、（B1）、（C1）And （D1）Process of the favourable effect of the present invention illustrated in the method for the 2nd embodiment of the present invention（A2）、（B2）、（C2）And（D2）In similarly may achieve.In addition, to the process in the method for the 2nd embodiment of the present invention（A2）、（B2）、（C2）And（D2）The favourable effect of the present invention illustrated, the process in the method for the 1st embodiment of the present invention （A1）、（B1）、（C1）And（D1）In similarly may achieve.

Hereinafter, while with reference to Fig. 5 A to Fig. 5 G, while being said to each process of the method for the 2nd embodiment of the present invention It is bright.

- process（A2）-

In process（A2）In, so that the 1st hot curing resin composition layer 102 was engaged with the 1st interarea of insulated substrate Mode is being formed with the insulated substrate 21 ' of chamber by the 1st adhesive film 100 is vacuum laminated（Fig. 5 A）.

Be formed with chamber insulated substrate 21 ' and the 1st adhesive film 100 structure as previously described.

On the 1st adhesive film 100 to be formed with chamber insulated substrate 21 ' it is vacuum laminated, can with it is the 1st of the present invention the real Apply the process in the method for mode（A1）Same order, under the conditions of implement.

In such process（A2）In, insulated substrate 21 ' of the 1st hot curing resin composition layer 102 with being formed with chamber The 1st interarea engagement（Fig. 5 B）.At this point, the 1st hot curing resin composition layer 102 is also filled into the chamber 21a of insulated substrate A part region（Fig. 5 B）.

In process（A2）In, the height h of the chamber of the insulated substrate before preferably vacuum laminated 1st adhesive film_A（Fig. 5 A）With The height h of the non-resin filling region of the chamber of insulated substrate after vacuum laminated 1st adhesive film_B（Fig. 5 B）Meet and to this hair Process in the method for the 1st bright embodiment（A1）The h illustrated_AWith h_BThe same relation of relation.Even if exist as a result, During using thin insulated substrate, also ensure that the sufficient space for build-in components, and the position of component can be effectively inhibited Put offset.

In addition, on the 1st supporting mass, as long as by conductor layer（Wiring）Being arranged on makes the 1st heat-curing resin group It is removed before closing the process of insulating layer obtained from nitride layer cures, for example, both can be in aftermentioned process（C2）With Process（D2）Between remove, can also be in aftermentioned process（D2）It removes afterwards.In a preferred embodiment, in aftermentioned work Sequence（D2）The 1st supporting mass is removed afterwards.In addition, in the case where using the metal foils such as copper foil as the 1st supporting mass, such as rear institute It states, since conductor layer can be set using such metal foil（Wiring）, so the 1st supporting mass can not also be removed.

- process（B2）-

In process（B2）In, component 25 is assembled into the 1st hot curing resin composition layer 102 in chamber 21a temporarily （Fig. 5 C）.That is, component 25 is assemblied in the 1st hot curing resin composition layer 102 exposed in chamber 21a temporarily.It can make Component 25 is identical with the component 15 that the method for the 1st embodiment to the present invention illustrates.

It is preferred that implement process in a heated condition（B2）, in this case, heating condition（When heating temperature, heating Between, heating when pressure etc.）It can be set to and the process in the method for the 1st embodiment of the present invention（B1）It is identical.In addition, in work Sequence（B2）In the obtained preferred value of the warpage of substrate and its measuring method such as in the method for the 1st embodiment of the present invention Process（B1）As illustrating.

It is preferred that in process（B2）The process heated to the 1st hot curing resin composition layer is carried out afterwards（Process （B2’））.Process（B2’）Condition can be set to the present invention the 1st embodiment method in process（B1’）It is identical.

Implement process in a heated condition（B2）In the case of, in process（B2）Afterwards, process can be both transferred directly to （B2’）, can also be cooled to room temperature by substrate（Room temperature）After be transferred to process（B2’）.

- process（C2）-

In process（C2）In, so that the 2nd hot curing resin composition layer 202 was engaged with the 2nd interarea of insulated substrate Mode, by 200 vacuum laminated the 2nd interarea in insulated substrate of the 2nd adhesive film（Fig. 5 D）.

In such process（C2）In, the 2nd hot curing resin composition layer 202 is filled into chamber 21a, is assemblied in temporarily Component 25 in chamber 21a is embedded to the 2nd hot curing resin composition layer 202（Fig. 5 E）.

According to the viewpoint of the position offset of suppression component, film surface is bonded than the 2nd in the heating temperature of the 1st bonding film surface Heating temperature it is low under conditions of implement process（C2）It is important.

On process（C2）Condition（The heating temperature T of 1st bonding film surface₁（℃）The heating of film surface Nian Jie with the 2nd Temperature T₂（℃）Preferred relation, T₁Preferred scope, T₂Preferred scope, the pumpdown time, the 1st Thermocurable tree Melt viscosity of oil/fat composition etc.）, can be set to and the process in the method for the 1st embodiment of the present invention（C1）It is identical.

The structure of 2nd adhesive film 200 is as previously described.In addition, in process（C2）The 2nd of middle the 2nd adhesive film 200 used Hold body 201 both can in process（A2）1st supporting mass 101 of middle the 1st adhesive film 100 used is identical, can not also be same.This Outside, in process（C2）The middle resin combination for the 2nd hot curing resin composition layer 202 used both can in process （A2）In for the 1st hot curing resin composition layer resin combination it is identical, can not also be same.

According to use later become insulating layer hot curing resin composition layer（That is, the 1st hot curing resin composition Layer）The method of the 2nd embodiment of the present invention of interim fabricated material as component, even if in order to reach component internally-arranged type Miniaturization, the slimming of substrate and in the case of the thin insulated substrate of the insulated substrate, the thickness that use chamber density high, can also inhibit The generation of substrate warp.Accordingly, it is capable to not to from process（B2）To process（C2）Until substrate transmission cause the situation of obstacle Under, successfully implement process（C2）.And then implement process under above-mentioned specific temperature conditionss（C2）The present invention it is the 2nd real In the method for applying mode, moreover it is possible to compacting and process（C2）Vacuum laminated associated component position offset, can with it is good into Product rate realizes the outstanding component internally-arranged type substrate of the configuration precision of component.

In a preferred embodiment, the method for the 2nd embodiment of the invention is in process（C2）And process（D2）Between Process including being smoothed by heating and mould pressing to the face of the 1st adhesive film side and the face of the 2nd adhesive film side（Process （C2’））.Process（C2’）Condition can be set to the present invention the 1st embodiment method in process（C1’）It is identical.

In a preferred embodiment, in process（C2）（And process（C2’））In, the position offset deficiency of component 40μm.The definition of the position offset of component and measuring method and the process in the method for the 1st embodiment to the present invention（C1）（And process（C1’））The definition illustrated is identical with measuring method.

In addition, on the 2nd supporting mass, as long as by conductor layer（Wiring）Being arranged on makes the 2nd heat-curing resin group It is removed before closing the process of insulating layer obtained from nitride layer cures, for example, both can be in process（C2）With it is aftermentioned Process（D2）Between remove, can also be in aftermentioned process（D2）It removes afterwards.In a preferred embodiment, aftermentioned Process（D2）The 2nd supporting mass is removed afterwards.In addition, in the case where using the metal foils such as copper foil as the 2nd supporting mass, as after It is described, since conductor layer can be set using such metal foil（Wiring）, so the 2nd supporting mass can not also be removed.

- process（D2）-

In process（D2）In, the 1st and the 2nd hot curing resin composition layer is made to carry out heat cure and form insulating layer.By This, the 1st hot curing resin composition layer 102 forms insulating layer 102 ', and the 2nd hot curing resin composition layer 202 is formed absolutely Edge layer 202 '（Fig. 5 F）.

Process（D2）In heat cure condition（Solidification temperature, hardening time, cure when pressure, whether carry out pre-add Configuration condition of substrate when heat and its condition, curing etc.）It can be set to and the process in the method for the 1st embodiment of the present invention （D1）It is identical.

As previously mentioned, it is preferred that in process（D2）The the 1st and the 2nd supporting mass is removed afterwards.Thus, in process（D2）In, preferably The the 1st and the 2nd hot curing resin composition layer is made to carry out heat cure in the state of with the 1st and the 2nd supporting mass.As a result, can Obtain the insulating layer on the surface with low roughness.

It, can be in process in a preferred embodiment（C2）With process（D2）Between implement cool down insulated substrate To room temperature（Room temperature）Processing.

In addition, in the following description, it sometimes will be in process（D2）In obtained substrate be known as that " component internally-arranged type insulate base Plate ".

- other process-

The method of the 2nd embodiment of the present invention can also further include（E2）Carry out perforate process and（F2）In insulating layer The upper process for forming conductor layer.These processes（E2）With（F2）Can according to it is being used in the manufacture of printed wiring board, to this Well-known various methods are implemented for field technology personnel, for example, can be illustrated with the method to the 1st embodiment Process（E1）With（F1）Similarly implement.In a preferred embodiment, process（E2）Including forming through hole.

By these processes, conductor is also formed in the holes such as through hole（Wiring）, it is arranged on the surface of the 1st insulating layer 102 ' Wiring 23, be arranged on the 2nd insulating layer 202 ' surface wiring 23 and component 25 be electrically connected and obtain Component internally-arranged type substrate 2000（Fig. 5 G）.It need not just be filled out as long as the inside in the holes such as electrical connection, through hole can be provided with conductor It fills, the thin layer of conductor can also be formed in a manner of the wall surface for coating hole..

The present invention the 2nd embodiment method in, can on the low insulating layer of surface roughness by plating come shape Into small conductor（Wiring）And manufacture two-layer wiring substrate（Value on surface roughness will carry out aftermentioned）.With reference to by component Insulated substrate is built in, the method for the 2nd embodiment of the invention can be such that the lift-launch amount of component increases while carrying out small Wiring compared with previous two-layer wiring substrate, can realize significantly high function and small-sized two-layer wiring substrate（Hereinafter, Also referred to as " component internally-arranged type two-layer wiring substrate "）.

In addition, the method for the 2nd embodiment of the present invention can also include（G2）Make component internally-arranged type substrate piece Process.Process（G2）It can be with the process in the method for the 1st embodiment of the present invention（G1）Similarly implement.

More than, although the preferred embodiment for combining manufacture component 2 layers of circuit board of internally-arranged type is real to the of the invention the 2nd The method for applying mode is illustrated, still, as long as including above-mentioned operation（A2）Extremely（D2）Each process and also process（A2）Extremely （D2）Each process implement in this order, the method for the 2nd embodiment of the invention is just not limited to specifically illustrate above-mentioned Embodiment.For example, it is also possible to implementing process（A2）Extremely（D2）Afterwards, it is repeatedly formed the process of conductor layer（That is, above-mentioned operation （F2））With the process for forming insulating layer, component internally-arranged type circuit board of the manufacture with multilayer wiring.The process for forming insulating layer Arbitrary method when can be according to well-known manufacture printed wiring board in the past is implemented, for example, can with above-mentioned work Sequence（C2）With（D2）Identical method is implemented.In addition, process（G2）It can be in process（C2）With process（D2）Between, process （D2）With process（E2）Between or process（E2）With process（F2）Between carry out.In the method for the 2nd embodiment of the present invention, It is contemplated that many variations.

[component internally-arranged type insulated substrate]

In the past, when manufacturing component internally-arranged type circuit board, circuit substrate generally is used as internal substrate.In contrast Ground in the method for the 2nd embodiment of the present invention, makes component be built in insulated substrate and manufactures component internally-arranged type wiring base Plate.Hereinafter, to the present invention the 2nd embodiment method in, in process（D2）In obtained component internally-arranged type insulated substrate It illustrates.

Component internally-arranged type insulated substrate, which is characterized in that including：

Insulated substrate has the 1st and the 2nd interarea, the chamber being formed between the 1st and the 2nd interarea of perforation；

1st insulating layer is engaged with the 1st interarea of insulated substrate；

2nd insulating layer is engaged with the 2nd interarea of insulated substrate；And

Component is arranged in a manner of being housed in the inside of chamber of insulated substrate on the 1st insulating layer,

2nd insulating layer fills the chamber of insulated substrate in a manner that component to be embedded to.

On be formed with chamber insulated substrate, for formed the 1st and the 2nd insulating layer hot curing resin composition, with And component, as previously described.

1st insulating layer and the 2nd insulating layer are either mutually different composition or identical composition.The 1st absolutely When edge layer and the 2nd insulating layer have identical composition, the 1st insulating layer and the 2nd insulating layer can not show specific boundary Carry out integration to face and continuity.

It is thin on the thickness of component internally-arranged type insulated substrate according to the viewpoint of the slimming of component internally-arranged type circuit board It is further preferred that preferably less than 400 μm, more preferably less than 300 μm, more preferably less than 200 μm, be more preferably 150 μm with Under, particularly preferably less than 100 μm.Although the lower limit of the thickness of component internally-arranged type insulated substrate is not particularly limited, one As can be set to 30 μm or more, 50 μm or more or 80 μm or more.

In component internally-arranged type insulated substrate, the spacing between component is corresponding with the spacing between foregoing chamber 21a.In detail Say that the spacing between component in preferred components internally-arranged type insulated substrate is below 10mm, more preferably below 9mm, more excellent in ground Elect below 8mm as, more preferably below 7mm, particularly preferably below 6mm.The lower limit of spacing between component be typically 1mm with Upper, 2mm is with first-class.Spacing between component, can not also be same without identical throughout component internally-arranged type insulated substrate.

By forming holes, the conductor layers such as through hole in component internally-arranged type insulated substrate, so as to manufacture component internally-arranged type bilayer The components internally-arranged type circuit board such as circuit board.

According to the viewpoint of small wiring, on component internally-arranged type insulated substrate, the preferably calculation on the surface after roughening treatment Art average roughness Ra be below 350nm, more preferably below 300nm, more preferably below 250nm, more preferably 200nm with Under, it is particularly preferably below 180nm, below 160nm, below 140nm, below 120nm, below 100nm or below 80nm.Although The lower limiting value of arithmetic average roughness Ra is not particularly limited, and still, becomes 20nm, 40nm etc..

In addition, arithmetic average roughness Ra can be measured using non-contact type surface roughness meter.As non-contact The specific example of type surface roughness meter can be enumerated " the WYKO NT3300 " of Veeco Instruments.

[component internally-arranged type two-layer wiring substrate]

In the method for the 2nd embodiment of the present invention, it can be preferred to which ground manufactures component internally-arranged type two-layer wiring substrate.

In one embodiment, component internally-arranged type two-layer wiring substrate includes：

1st and the 2nd conductor layer；

Component internally-arranged type insulated substrate is engaged with the 1st and the 2nd conductor layer and is arranged between the 1st and the 2nd conductor layer； And

Interlayer connector is electrically connected the 1st and the 2nd conductor layer.

Conductor layer and component internally-arranged type insulated substrate are as previously described.

On interlayer connector, as long as can be electrically connected to the 1st and the 2nd conductor layer, just it is not particularly limited, for example, It can enumerate and fill conductor and the connector formed, the connection formed in the thin layer of the wall surface coated conductor of through hole in through-holes Body.

In the method for the 2nd embodiment of the present invention, due to passing through plating shape on the low insulating layer of surface roughness Into conductor layer, so the component internally-arranged type two-layer wiring substrate with small wiring can be obtained.It for example, can be with good finished product Rate, which is formed, has line/interval ratio（L/S ratios）Preferably less than 50/50 μm, more preferably less than 40/40 μm, be more preferably 30/30 The component internally-arranged type two-layer wiring substrate of small wiring below μm, and then, even with L/S than be preferably 20/20 μm with Under, less than 10/10 μm, the component internally-arranged type two-layer wiring substrate of less than 7/7 μm of small wiring, also can be with good yield rate It is formed.

[semiconductor device]

Semiconductor device can be manufactured using the component internally-arranged type circuit board that the method by the present invention manufactures.

As such semiconductor device, it can enumerate and be supplied to electric product（For example, computer, portable phone, number Video camera and TV etc.）And the vehicles（For example, automotive bicycle, automobile, electric car, ship and aircraft etc.）Deng it is various Semiconductor device.

[embodiment]

Hereinafter, although specifically describing the present invention by embodiment, the present invention is not limited to these embodiments. In addition, in the following record, unless otherwise specified, " part " and " % " just means " mass parts " and " matter respectively Measure % ".

First, various measuring methods, evaluation method are illustrated.

[measurement, the modulation 1 of sample for evaluation]

（1-1）It is formed with the preparation of the circuit substrate of chamber

In the internal layer circuit substrate that size is 340mm × 510mm（Residual copper ratio 70%）On, having made perforation with 5mm spacing should The chamber that size between 1st and the 2nd interarea of internal layer circuit substrate is 0.8mm × 1.2mm.As internal layer circuit substrate, use It is formed with the glass cloth base material epoxy resin double-sided copper-clad laminated board of internal layer circuit（The thickness of the copper foil of single side is 12 μm, base The thickness of plate（The height h of=chamber_A）For 100 μm, full integral thickness be 124 μm, the coefficient of thermal expansion of substrate is 7ppm, substrate Glass transition temperature is 230 DEG C, Mitsubishi Gas Chemical（Strain）It makes " 832NSR-LC "）.Next, use MEC（Strain）It makes " CZ8100 " The roughening treatment on copper surface is carried out to 1 μm of two facet etch for the internal layer circuit substrate for being formed with chamber.Obtained substrate is known as " substrate a1 ".

（1-2）1st adhesive film it is vacuum laminated

The 1st adhesive film made from following making examples removes protective film.Hereafter, pressurizeed and be laminated using intermittent vacuum Machine（（Strain）Name mechanism is made made " MVLP-500 "）, so that the 1st hot curing resin composition layer and the 1st interarea of circuit substrate The mode to connect is vacuum laminated in substrate a1 by the 1st adhesive film.The 1st adhesive film it is vacuum laminated in, decompression 30 seconds（That is, Pumpdown time is 30 seconds）And after air pressure is made to be below 13hPa, in the temperature shown in table 2 below -1（" process（A）”）, pressure Under power 0.5MPa, via heat resistant rubber heating crimping 30 seconds from the 1st supporting mass, lamination treatment is carried out as a result,.The base that will be obtained Plate is known as " substrate b1 ".This process is equivalent to process（A）（In detail, it is process（A1））.

（1-3）The interim assembling of component

Hereafter, in the condition shown in table 2-1（" process（B）”）Under, by component（（Strain）Murata Manufacturing Co. Ltd.'s preparative layer laminate film electricity Container 1005, size are 1.0mm × 0.5mm, and thickness is 180 μm）1st Thermocurable tree of the interim intracavitary for being assemblied in substrate b1 On oil/fat composition layer.This process is equivalent to process（B）（In detail, it is process（B1））.

In addition, on embodiment 1-3,1-4 and comparative example 1-2, after interim build-up member, shown in table 2-1 Condition（" process（B’）”）Under, further the 1st hot curing resin composition layer is heated.This process is equivalent to work Sequence（B1’）.

Obtained substrate is known as " substrate c1 ".

（1-4）2nd adhesive film it is vacuum laminated

The 2nd adhesive film made from following making examples removes protective film.Hereafter, pressurizeed and be laminated using intermittent vacuum Machine（（Strain）Name mechanism is made made " MVLP-500 "）, so that the 2nd hot curing resin composition layer and the 2nd interarea of circuit substrate The mode to connect is vacuum laminated in substrate c1 by the 2nd adhesive film.The 2nd adhesive film it is vacuum laminated in, decompression 30 seconds（That is, Pumpdown time is 30 seconds）And after air pressure is made to be below 13hPa, by the heating temperature of the 1st bonding film surface（T₁）It is viscous with the 2nd Connect the heating temperature of film surface（T₂）It is set as the value shown in table 2 below -1（" process（C）”）, under pressure 0.74MPa via Heat resistant rubber heating crimping 30 seconds, so as to carry out lamination treatment.This process is equivalent to process（C）（In detail, it is process （C1））.

And then under normal pressure, heating and mould pressing is carried out using SUS runner plates 60 seconds, under pressure 0.5MPa as a result, to substrate Two sides carries out smoothing techniques.The temperature conditionss of smoothing techniques are identical with lamination treatment condition.Obtained substrate is known as " base Plate d1 ".This process is equivalent to process（C1’）.

（1-5）The heat cure of 1st and the 2nd hot curing resin composition layer

The supporting mass in the 1st and the 2nd adhesive film is removed from substrate d1.Hereafter, under normal pressure, to substrate d1 at 100 DEG C Next heating 30 minutes heats substrate d1 30 minutes at 180 DEG C, so that the 1st and the 2nd hot curing resin composition Layer heat cure.Substrate is set to horizontality to implement heat cure.As a result, insulating layer is formed on the two sides of internal layer circuit substrate. This process is equivalent to process（D）（In detail, it is process（D1））.

[measurement, the modulation 2 of sample for evaluation]

（2-1）It is formed with the preparation of the insulated substrate of chamber

On the insulated substrate that size is 340mm × 510mm, made with 5mm spacing and penetrate through the 1st and the of the insulated substrate The chamber that size between 2 interareas is 0.8mm × 1.2mm.As insulated substrate, use fiberglass substrate epoxy resin two Face copper-clad laminated board（The thickness of the copper foil of single side is 12 μm, substrate（Fiberglass substrate-epoxy resin cures prepreg） Thickness（The height h of=chamber_A）For 100 μm, integral thickness be 124 μm, the coefficient of thermal expansion of substrate is 7ppm, the glass of substrate Conversion temperature is 230 DEG C, Mitsubishi Gas Chemical（Strain）It makes " 832NSR-LC "）The substrate that all removes of two sides copper foil.By what is obtained Substrate is known as " substrate a2 ".

（2-2）1st adhesive film it is vacuum laminated

The 1st adhesive film made from following making examples removes protective film.Hereafter, pressurizeed and be laminated using intermittent vacuum Machine（（Strain）Name mechanism is made made " MVLP-500 "）, so that the 1st hot curing resin composition layer and the 1st interarea of circuit substrate The mode to connect is vacuum laminated in substrate a2 by the 1st adhesive film.The 1st adhesive film it is vacuum laminated in, decompression 30 seconds（That is, Pumpdown time is 30 seconds）And after air pressure is made to be below 13hPa, in the temperature shown in table 2 below -2（" process（A）”）, pressure Heating crimping 30 seconds is carried out via heat resistant rubber from the 1st supporting mass under power 0.5MPa, thus carries out lamination treatment.By what is obtained Substrate is known as " substrate b2 ".This process is equivalent to process（A）（In detail, it is process（A2））.

（2-3）The interim assembling of component

Hereafter, in the condition shown in table 2-2（" process（B）”）In, by component（（Strain）Murata Manufacturing Co. Ltd.'s preparative layer laminate film electricity Container 1005, size are 1.0mm × 0.5mm, and thickness is 180 μm）Interim the 1st hot curing resin composition for being assemblied in intracavitary On layer.This process is equivalent to process（B）（In detail, it is process（B2））.

In addition, on embodiment 2-3 and 2-4, after interim build-up member, in the condition shown in table 2-2（" process （B’）”）Under, further the 1st hot curing resin composition layer is heated.Obtained substrate is known as " substrate c2”.This process is equivalent to process（B2’）.

（2-4）2nd adhesive film it is vacuum laminated

The 2nd adhesive film made from following making examples removes protective film.Hereafter, pressurizeed and be laminated using intermittent vacuum Machine（（Strain）Name mechanism is made made " MVLP-500 "）, so that the 2nd hot curing resin composition layer and the 2nd interarea of circuit substrate The mode to connect, the 2nd adhesive film is vacuum laminated in substrate c2.The 2nd adhesive film it is vacuum laminated in, decompression 30 seconds（That is, Pumpdown time is 30 seconds）And after air pressure is made to be below 13hPa, by the heating temperature of the 1st bonding film surface（T₁）It is viscous with the 2nd Connect the heating temperature of film surface（T₂）It is set as the value shown in table 2 below -2（" process（C）”）, under pressure 0.74MPa via Heat resistant rubber carries out heating crimping 30 seconds, thus carries out lamination treatment.This process is equivalent to process（C）（In detail, it is process （C2））.

And then under normal pressure, heating and mould pressing is carried out using SUS runner plates 60 seconds, under pressure 0.5MPa as a result, to substrate Two sides carries out smoothing techniques.The temperature conditionss of smoothing techniques are identical with lamination treatment condition.Obtained substrate is known as " base Plate d2 ".This process is equivalent to process（C2’）.

（2-5）The heat cure of 1st and the 2nd hot curing resin composition layer

The supporting mass in the 1st and the 2nd adhesive film is removed from substrate d2.Hereafter, under normal pressure, to substrate d2 at 100 DEG C Next heating 30 minutes heats substrate d2 30 minutes at 180 DEG C, make the 1st and the 2nd hot curing resin composition layer hot Cure.Substrate is set to horizontality to implement heat cure.As a result, insulating layer is formed on the two sides of insulated substrate.This process phase When in process（D）（In detail, it is process（D2））.

Microscope is used to substrate b1 and b2（Keyence systems " VH-5500 "）To measure the non-resin filling region of chamber Highly（h_B）.

Use dynamic viscoelastic measuring device（（Strain）UBM company systems " Rheosol-G3000 "）To in following making examples The 1st hot curing resin composition layer measurement melt viscosity in the 1st adhesive film made.Using the parallel-plate of diameter 18mm In the T shown in table 2-1 or table 2-2₁（℃）Under to sampling resin combination 1g keep 1 minute after, vibration 1Hz, deformation Dynamic viscoelastic rate is measured under the measuring condition of 1deg, calculates melt viscosity（poise）.In addition, sampling resin combination is being surveyed It experienced the process shown in table 2-1 or table 2-2 before amount melt viscosity（A）, process（B）（As needed, process（B’））Together The thermal history of sample.

On the evaluation of substrate warp, implemented as illustrated in fig. 6 using substrate c1 and c2.In detail, in room temperature（23 ℃）Under, with setting tool 31 fixed substrate c1 or c2（50 in Fig. 6）One side（CD sides）, compared with ground（Horizontal plane） It is sling in vertical direction.Herein it is assumed that the CD sides including substrate c1 or c2 perpendicular to the face on ground, as vertical plane （30 in Fig. 6）.Then, the opposite side away from vertical plane 30 is measured（AB sides）Both ends, that is, side a and b vertical height（H_AWith H_B）, its average value is obtained（（H_A+H_B）/2）.Then, substrate warp is evaluated based on following benchmark.In addition, when in this evaluation When average value is bigger than 25mm, easily substrate transmission is generated in the vacuum laminated process of the 2nd adhesive film bad.

Evaluation criteria：

○：Average value is in below 25mm；

×：Average value is bigger than 25mm.

Use light microscope（Keyence systems " VH-5500 "）Measure the change of the component locations before and after the stacking of the 2nd adhesive film Change.It is the position for measuring the object Part between substrate c1 and substrate d1 or between substrate c2 and substrate d2 on measurement Variation.In addition, in this evaluation, using the center of component as datum mark, the change in location of the datum mark is measured（μm）.Then, The position offset of component is evaluated based on following evaluation criteria.

Evaluation criteria：

○：Change in location is less than 40 μm；

×：Change in location is at 40 μm or more.

[making example 1]

（1）（The modulation of resin varnish 1）

In the in the mixed solvent of 15 parts of 15 parts of MEK and cyclohexanone, while to bisphenol A type epoxy resin（Epoxide equivalent 180, Mitsubishi Chemical（Strain）It makes " jER828EL "）28 parts, 4 functional epoxy resins of naphthalene type（Epoxide equivalent 163, big Japan Ink chemical industry （Strain）It makes " HP4700 "）28 parts and phenoxy resin（Mitsubishi Chemical（Strain）Make " YX6954BH30 ", solid state component is 30% MEK solution）20 parts are stirred while making its heating for dissolving.The phenol novolacs containing triazine skeleton are mixed thereto（Hydroxyl Base equivalent is 125, DIC（Strain）Make " LA7054 ", the MEK solution that solid state component is 60%, the amount of nitrogen is about 12 weight %） 27 parts, naphthols system curing agent（Hydroxyl equivalent is 215, and aurification is lived by Nippon Steel（Strain）It makes " SN-485 ", solid state component is 50 weights Measure the MEK solution of %）27 parts, imidazoles system curing accelerator（Four countries' chemical conversion industry（Strain）System, " 2E4MZ "）0.1 part, fire retardant（Three Light（Strain）Make " HCA-HQ ", 10-（2,5- dihydroxy phenol）- 10- hydrogen -9- oxa- -10- phospho hetero phenanthrenes -10- is aoxidized Object, average grain diameter are 2 μm）5 parts, with amino silicone methane series coupling agent（SHIN-ETSU HANTOTAI's chemical industry（Strain）It makes " KBM573 "）It carries out at surface The preparing spherical SiO 2 of reason（0.5 μm of average grain diameter,（Strain）ADMATECHS systems " SOC2 "）140 parts and polyvinyl butyral Resin（Ponding chemical industry（Strain）It makes " KS-1 ", the ethyl alcohol and the 1 of toluene that solid state component is 15 weight %:1 solution）It 30 parts, uses High speed Stirring device is uniformly dispersed, and makes resin varnish 1.

When the nonvolatile component in resin varnish 1 total is set to 100 mass %, inorganic filling material（Spherical dioxy SiClx）Amount be about 58 mass %.

（2）The making of 1st adhesive film 1

Prepare the PET film of subsidiary alkyd resin system release layer（LINTEC（Strain）It makes " AL5 ", thickness is 38 μm）As supporting Body.The resin varnish 1 of above-mentioned modulation is evenly coated to the release layer side surface of the supporting mass with dip coater, 80 DEG C~ 120℃（It is 100 DEG C average）Lower drying 5 minutes and form the 1st hot curing resin composition layer.1st heat-curing resin combines The thickness of nitride layer is 25 μm.Next, it is bonded polypropylene screen on the surface of hot curing resin composition layer（The special paper of prince （Strain）It makes " ア Le Off ァ Application MA-411 ", thickness is 15 μm）Smooth surface side as protective film, modulate the 1st adhesive film 1.

（3）The making of 2nd adhesive film 1

Prepare the PET film of subsidiary alkyd resin system release layer（LINTEC（Strain）It makes " AL5 ", thickness is 38 μm）As supporting Body.The resin varnish 1 of above-mentioned modulation is evenly coated to the release layer side surface of the supporting mass with dip coater, 80 DEG C~ 120℃（It is 100 DEG C average）Lower drying 4 minutes and form the 2nd hot curing resin composition layer.2nd heat-curing resin combines The thickness of nitride layer is 30 μm.Next, it is bonded polypropylene screen on the surface of hot curing resin composition layer（The special paper of prince （Strain）It makes " ア Le Off ァ Application MA-411 ", thickness is 15 μm）Smooth surface side as protective film, modulate the 2nd adhesive film 1.

[making example 2]

（1）The modulation of resin varnish 2

In solvent naphtha（solvent naphtha）In 25 parts, while to hexichol phenol-type epoxy resin（Gold is lived by Nippon Steel Chemistry（Strain）The 1 of system " ZX1059 ", bisphenol A-type and bisphenol-f type：1 melange, epoxide equivalent are about 169）5 parts, naphthalene type ring oxygen Resin（DIC（Strain）It makes " HP4032SS ", epoxide equivalent is about 144）5 parts, bis-xylene phenol-type epoxy resin（Mitsubishi Chemical （Strain）It makes " YX4000HK ", epoxide equivalent is about 185）5 parts, biphenyl type epoxy resin（Japanese chemical drug（Strain）System " NC3000H ", epoxide equivalent are about 288）15 parts and phenoxy resin（Mitsubishi Chemical（Strain）It makes " YL7553BH30 ", weight Amount average molecular weight is about the MEK solution that 35000, solid state component is 30%）10 parts are stirred while making its heating for dissolving. After cooling to room-temperature, the phenol novolac system curing agent containing triazine skeleton is mixed thereto（DIC（Strain）Make " LA- 7054 ", the MEK solution that hydroxy equivalent is 125, solid state component is 60%）10 parts, naphthols system curing agent（Aurification is lived by Nippon Steel It learns（Strain）It makes " SN-485 ", the MEK solution that hydroxy equivalent is 215, solid state component is 60%）10 parts, curing accelerator（4- Dimethylaminopyrimidine（DMAP）, solid state component is the MEK solution of 5 mass %）1 part, fire retardant（Three light（Strain）Make " HCA- HQ ", 10-（2,5- dihydroxy phenol）- 10- hydrogen -9- oxa- -10- phospho hetero phenanthrene -10- oxides, average grain diameter are 2μm）3 parts, with amino silicone methane series coupling agent（SHIN-ETSU HANTOTAI's chemical industry（Strain）It makes " KBM573 "）The spherical dioxy being surface-treated SiClx（（Strain）ADMATECHS systems " SOC2 ", the carbon amounts that average grain diameter is 0.5 μm, per surface area is average is 0.39mg/m²） It 130 parts, is equably carried out with high speed Stirring device scattered and modulates resin varnish 2.

When the nonvolatile component in resin varnish 2 total is set to 100 mass %, inorganic filling material（Spherical dioxy SiClx）Amount be about 73 mass %.

（2）The making of 1st adhesive film 2

Prepare the PET film of subsidiary alkyd resin system release layer（LINTEC（Strain）It makes " AL5 ", thickness is 38 μm）As supporting Body.The resin varnish 2 of above-mentioned modulation is evenly coated to the release layer side surface of the supporting mass with dip coater, 80 DEG C~ 120℃（It is 100 DEG C average）Lower drying 5 minutes and form the 1st hot curing resin composition layer.1st heat-curing resin combines The thickness of nitride layer is 30 μm.Next, it is bonded polypropylene screen on the surface of hot curing resin composition layer（The special paper of prince （Strain）It makes " ア Le Off ァ Application MA-411 ", thickness is 15 μm）Smooth surface side as protective film, modulate the 1st adhesive film 2.

（3）The making of 2nd adhesive film 2

Prepare the PET film of subsidiary alkyd resin system release layer（LINTEC（Strain）It makes " AL5 ", thickness is 38 μm）As supporting Body.The resin varnish 2 of above-mentioned modulation is evenly coated to the release layer side surface of the supporting mass with dip coater, 80 DEG C~ 120℃（It is 100 DEG C average）Lower drying 4 minutes and form the 2nd hot curing resin composition layer.2nd heat-curing resin combines The thickness of nitride layer is 50 μm.Next, it is bonded polypropylene screen on the surface of hot curing resin composition layer（The special paper of prince （Strain）It makes " ア Le Off ァ Application MA-411 ", thickness is 15 μm）Smooth surface side as protective film, modulate the 2nd adhesive film 2.

[table 1]

Using the 1st adhesive film 1 and the 2nd adhesive film 1, manufactured according to the order of above-mentioned [measurement, the modulation 1 of sample for evaluation] Substrate a1 to d1.Each evaluation result is shown in 2-1.In addition, on obtained substrate b1, the height of the non-resin filling region of chamber （h_B）It is 97 μm.

Using the 1st adhesive film 2 and the 2nd adhesive film 2, manufactured according to the order of above-mentioned [measurement, the modulation 1 of sample for evaluation] Substrate a1 to d1.Each evaluation result is shown in 2-1.In addition, on obtained substrate b1, the height of the non-resin filling region of chamber （h_B）It is 95 μm.

In addition to pumpdown time when by vacuum laminated 2 adhesive film was changed to 60 seconds from 30 seconds, with embodiment 1-1 Similarly manufacture substrate a1 to d1.Each evaluation result is shown in 2-1.In addition, on obtained substrate b1, the non-resin of chamber is filled The height in region（h_B）It is 97 μm.

[table 2-1]

Using the 1st adhesive film 1 and the 2nd adhesive film 1, manufactured according to the order of above-mentioned [measurement, the modulation 2 of sample for evaluation] Substrate a2 to d2.Each evaluation result is shown in 2-2.In addition, on obtained substrate b2, the height of the non-resin filling region of chamber （h_B）It is 97 μm.

Using the 1st adhesive film 2 and the 2nd adhesive film 2, manufactured according to the order of above-mentioned [measurement, the modulation 2 of sample for evaluation] Substrate a2 to d2.Each evaluation result is shown in 2-2.In addition, on obtained substrate b2, the height of the non-resin filling region of chamber （h_B）It is 95 μm.

Using the 1st adhesive film 1 and the 2nd adhesive film 1, manufactured according to the order of above-mentioned [measurement, the modulation 2 of sample for evaluation] Substrate a2 to d2.Each evaluation result is shown in 2-2.In addition, on obtained substrate b2, the height of the non-resin filling region of chamber （h_B）It is 98 μm.

In addition to pumpdown time when by vacuum laminated 2 adhesive film was changed to 60 seconds from 30 seconds, with embodiment 2-1 Similarly manufacture substrate a2 to d2.Each evaluation result is shown in 2-2.In addition, on obtained substrate b2, the non-resin of chamber is filled The height in region（h_B）It is 97 μm.

[table 2-2]

Reference sign

11：Circuit substrate；

11’：It is formed with the circuit substrate of chamber；

12：Substrate；

12a：Chamber；

13：Wiring；

15：Component；

21：Insulated substrate；

21’：It is formed with the insulated substrate of chamber；

21a：Chamber；

23：Wiring；

25：Component；

30：Vertical plane；

31：Setting tool；

50：Substrate c1, c2；

100：1st adhesive film；

101：1st supporting mass；

102：1st hot curing resin composition layer；

102’：1st insulating layer；

200：2nd adhesive film；

201：2nd supporting mass；

202：2nd hot curing resin composition layer；

202’：2nd insulating layer；

1000：Component internally-arranged type circuit board；

2000：Component internally-arranged type substrate.

Claims

1. a kind of manufacturing method of component internally-arranged type circuit board, in order including following processes（A）、（B）、（C）And（D）：

（A）It is in a manner of the 1st hot curing resin composition layer to be made to be engaged with the 1st interarea of internal substrate, the 1st adhesive film is true The process that dead level is stacked in internal substrate, wherein, the internal substrate has the 1st and the 2nd interarea, is formed with perforation the 1st and the 2nd Chamber between interarea, the 1st adhesive film include the 1st supporting mass and the 1st heat-curing resin engaged with the 1st supporting mass Composition layer；

（C）It is in a manner of the 2nd hot curing resin composition layer to be made to be engaged with the 2nd interarea of internal substrate, the 2nd adhesive film is true The process that dead level is stacked in the 2nd interarea of internal substrate, in heating temperature the adding than the 2nd bonding film surface of the 1st bonding film surface Carried out under conditions of hot temperature is low it is vacuum laminated, wherein, the 2nd adhesive film include the 2nd supporting mass and with the 2nd supporting mass 2nd hot curing resin composition layer of engagement；

2. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

Internal substrate is circuit substrate.

3. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

Internal substrate is insulated substrate.

4. the manufacturing method of component internally-arranged type circuit board according to claim 3, wherein,

Insulated substrate is to cure prepreg, glass substrate or ceramic substrate.

5. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

In process（C）In, the heating temperature of the 1st bonding film surface is being set to T₁（℃）, the 2nd bonding film surface heating temperature It is set to T₂（℃）When, T₁And T₂Meet T₂-40≤T₁≤T₂- 10 relation.

6. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

2nd hot curing resin composition layer is than the 1st hot curing resin composition thickness.

7. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

In process（A）In, the height h of the chamber of the internal substrate before vacuum laminated 1st adhesive film_AWith vacuum laminated 1st adhesive film The height h of the non-resin filling region of the chamber of internal substrate afterwards_BMeet 0.8h_A≤h_B≤h_ARelation.

8. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

In process（C）In, the melt viscosity of the 1st hot curing resin composition layer is more than 2000 pools.

9. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

In process（C）With process（D）Between, including making the face of the 1st adhesive film side and the face of the 2nd adhesive film side by heating and mould pressing The process of smoothing.

10. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

In process（D）In, carry out heat cure in the state of with the 1st and the 2nd supporting mass.

11. the manufacturing method of component internally-arranged type circuit board according to claim 2, wherein,

The thickness of circuit substrate is 50~350 μm.

12. the manufacturing method of component internally-arranged type circuit board according to claim 3, wherein,

The thickness of insulated substrate is 30~350 μm.

13. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

Spacing between chamber is 1~10mm.

14. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

The amount of inorganic filling material in 1st hot curing resin composition layer is more than 50 mass %.

15. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

In process（B）In the obtained warpage of substrate in below 25mm.

16. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

It further includes（E）The process for carrying out perforate.

17. the manufacturing method of component internally-arranged type circuit board according to claim 1, wherein,

It further includes（F）The process for forming conductor layer on the insulating layer.

18. the manufacturing method of component internally-arranged type circuit board according to claim 17, wherein,

Process（F）Including：

Roughening treatment is carried out to insulating layer；And

Conductor layer is formed by plating on insulating layer after roughening.

19. a kind of semiconductor device, including the component internally-arranged type cloth manufactured with any one of them method of claim 1~18 Line substrate.