JP2015106616A - Lead frame and method of manufacturing the same - Google Patents
Lead frame and method of manufacturing the same Download PDFInfo
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- JP2015106616A JP2015106616A JP2013247483A JP2013247483A JP2015106616A JP 2015106616 A JP2015106616 A JP 2015106616A JP 2013247483 A JP2013247483 A JP 2013247483A JP 2013247483 A JP2013247483 A JP 2013247483A JP 2015106616 A JP2015106616 A JP 2015106616A
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000007747 plating Methods 0.000 claims abstract description 250
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 248
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 124
- 229910052709 silver Inorganic materials 0.000 claims abstract description 123
- 239000004332 silver Substances 0.000 claims abstract description 123
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 40
- 239000000956 alloy Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 24
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 17
- 239000000460 chlorine Substances 0.000 claims description 17
- 229910052801 chlorine Inorganic materials 0.000 claims description 17
- 235000019270 ammonium chloride Nutrition 0.000 claims description 12
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 12
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 abstract description 38
- 239000011347 resin Substances 0.000 abstract description 38
- 238000009499 grossing Methods 0.000 abstract 2
- 238000005538 encapsulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 172
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 109
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 229910000510 noble metal Inorganic materials 0.000 description 20
- 238000000034 method Methods 0.000 description 19
- 238000009713 electroplating Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 3
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KKQWIXOWHPAUNJ-UHFFFAOYSA-M [K].[Ag]Br Chemical compound [K].[Ag]Br KKQWIXOWHPAUNJ-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Abstract
Description
本発明は、ニッケルめっきと銀または銀を含有する合金めっきを施した半導体用リードフレーム及びそのリードフレームの製造方法に関するものである。 The present invention relates to a semiconductor lead frame subjected to nickel plating and silver or an alloy plating containing silver, and a method of manufacturing the lead frame.
半導体素子搭載用部品の一つとしてリードフレームがある。従来、リードフレーム上の全面または部分的に銀めっきを施したリードフレームが多く使用されているが、銀または銀を含有する合金は封止樹脂との密着性が悪く、衝撃や熱によってリードフレームと封止樹脂が容易に剥離するため、信頼性に問題がある。そのため、図４に示すようなリードフレームの表面をマイクロエッチング処理によって凹凸を形成した粗化状態とすることで物理的なアンカー効果を生み出し、封止樹脂との密着性を向上させる手法が知られているが、リードフレームで多く使用されているケイ素を含む銅合金のリードフレームではマイクロエッチング処理によってスマットと呼ばれる不純物残渣が発生するため使用できない。 One of semiconductor component mounting parts is a lead frame. Conventionally, many lead frames with silver plating on the whole or part of the lead frame have been used. However, silver or an alloy containing silver has poor adhesion to the sealing resin, and the lead frame is affected by impact or heat. Since the sealing resin peels easily, there is a problem in reliability. Therefore, there is known a technique for creating a physical anchor effect and improving the adhesion with the sealing resin by making the surface of the lead frame as shown in FIG. However, a silicon-containing copper alloy lead frame that is often used in lead frames cannot be used because an impurity residue called smut is generated by the microetching process.
また、銅合金のリードフレームの場合は、半導体素子との接合時に用いる金属線との良好な接合性を確保するには、下地に存在する銅の拡散の影響を最小化する必要があるため、銀または銀を含有する合金などの貴金属または貴金属合金によるめっき層を直接下地銅の上に形成させる場合は、一般的にその貴金属または貴金属合金によるめっき層の厚さを２μｍ以上にする必要がある。近年半導体パッケージは小型化、低コスト化のため、軽薄短小での高密度実装が求められている。小型化のためにはめっき層の厚みをより薄くすることが求められており、貴金属または貴金属合金によるめっき層の厚みに関しては低コスト化の観点からもより一層薄くすることが求められている。 In the case of a copper alloy lead frame, in order to ensure good bondability with a metal wire used when bonding to a semiconductor element, it is necessary to minimize the influence of copper diffusion existing in the base, When a plating layer made of a noble metal or a noble metal alloy such as silver or a silver-containing alloy is directly formed on the underlying copper, it is generally necessary to set the thickness of the plating layer made of the noble metal or the noble metal alloy to 2 μm or more. . In recent years, in order to reduce the size and cost of semiconductor packages, high-density mounting is required in light, thin, and short. In order to reduce the size, it is required to reduce the thickness of the plating layer, and the thickness of the plating layer made of a noble metal or a noble metal alloy is required to be further reduced from the viewpoint of cost reduction.
銅合金のリードフレームにおいて、貴金属または貴金属合金によるめっき層の厚さを薄くするための方策の一つに、貴金属または貴金属合金によるめっき層の下層として、銅の拡散を抑制する効果のあるニッケルまたはニッケルを含有する合金によるめっき層を形成することで、貴金属または貴金属合金によるめっき層の厚みを薄くする手法がある。 One of the measures to reduce the thickness of the plating layer made of noble metal or noble metal alloy in the lead frame of copper alloy is nickel or nickel, which has the effect of suppressing copper diffusion as the lower layer of the plating layer made of noble metal or noble metal alloy. There is a method of reducing the thickness of a plating layer made of a noble metal or a noble metal alloy by forming a plating layer made of an alloy containing nickel.
しかし、この様な貴金属または貴金属合金によるめっき層が薄くなると樹脂との密着性が悪化してしまう。
そこで、特許文献１として示す特開平９−２９８２６号公報には、図３に示すような銅合金の全面に緻密で平坦なニッケルめっき層を形成し、その上に縦方向への結晶成長を優先させたニッケルめっき層を形成して表面を凹凸のある面とすることにより物理的なアンカー効果を生み出し、封止樹脂との密着性を向上させる技術が開示されている。
However, when the plating layer made of such a noble metal or noble metal alloy is thinned, the adhesion with the resin is deteriorated.
Therefore, in Japanese Patent Application Laid-Open No. 9-29826 shown as Patent Document 1, a dense and flat nickel plating layer is formed on the entire surface of the copper alloy as shown in FIG. 3, and the crystal growth in the vertical direction is prioritized thereon. A technique for producing a physical anchor effect and improving adhesion with a sealing resin by forming a nickel plating layer having a surface having an uneven surface is disclosed.
また、特許文献２として示す特開２０１０−１１１８９９号公報には、銅合金上に山型状のニッケルめっき層を形成させた後、その上にレベリング性の良いニッケルめっき層を形成することで凹凸形状を半球状とすることにより、特許文献と１と同様に封止樹脂との密着性を向上させた上で、エポキシ樹脂成分の滲み出しを防止する技術が開示されている。 Japanese Patent Application Laid-Open No. 2010-111899 shown as Patent Document 2 discloses that a chevron-shaped nickel plating layer is formed on a copper alloy, and then a nickel plating layer having a good leveling property is formed thereon, thereby forming irregularities. A technique for preventing bleeding of the epoxy resin component while improving the adhesion to the sealing resin as in Patent Documents 1 and 1 by making the shape hemispherical is disclosed.
また、特許文献３として示す特許第５１５１４３８号公報には、粗面のニッケル層上に金層と銀層からなる貴金属めっき層を形成する技術が開示されている。 Japanese Patent No. 5151438 shown as Patent Document 3 discloses a technique for forming a noble metal plating layer composed of a gold layer and a silver layer on a rough nickel layer.
特許文献１に示されるものにあっては、チップ搭載面に必要なアンカー効果を得るという目的はある程度は実現されている。しかし、微細な凹凸面がパッド部にも同様のめっき状態で形成されるため、半導体素子を接着するためのダイボンディング用エポキシ樹脂をパッド部に塗布し、半導体素子を搭載後に加熱硬化させた時、塗布したダイボンディング用エポキシ樹脂中の未硬化のエポキシ樹脂成分が、結晶成長による微細な凹凸構造の隙間から滲み出して不良品を発生させる原因となることもあるため、製造時に細心の注意を払う必要があり、現実としては半導体装置の製造工程が複雑なものとならざるを得ない。 In the device disclosed in Patent Document 1, the purpose of obtaining the anchor effect necessary for the chip mounting surface is realized to some extent. However, since the fine uneven surface is also formed in the pad part in the same plating state, when the epoxy resin for die bonding for adhering the semiconductor element is applied to the pad part and the semiconductor element is mounted and heated and cured Since the uncured epoxy resin component in the applied epoxy resin for die bonding may ooze out from the gaps in the fine uneven structure due to crystal growth, it may cause defective products. Actually, the manufacturing process of the semiconductor device must be complicated.
また、特許文献２に示されるものにあっては、ニッケルめっき上の貴金属めっきの厚みを減らすことは可能であり、また封止樹脂との密着性も維持される。しかし、ニッケルめっき層を半球状に形状にするためには、山型状ニッケルめっき層を１μｍ施した上に、レベリング性の良いニッケルめっき層を１μｍめっきしてニッケルめっき層を半球状に形成する必要があり、更にその上に貴金属または貴金属合金のめっき層を形成する必要があるため、めっき厚みは従来の２μｍ以上の厚みと大差が無いか、逆に厚くなってしまう場合がある。 Moreover, in what is shown by patent document 2, it is possible to reduce the thickness of the noble metal plating on nickel plating, and the adhesiveness with sealing resin is also maintained. However, in order to make the nickel plating layer into a hemispherical shape, the nickel plating layer is formed into a hemispherical shape by applying a 1 μm thick chevron-shaped nickel plating layer and 1 μm plating with a nickel plating layer having good leveling properties. In addition, since a plating layer of a noble metal or a noble metal alloy needs to be formed thereon, the plating thickness is not much different from the conventional thickness of 2 μm or more, or may be thicker.
また、特許文献３に示されるものにあっては、ニッケル層の表面を十分に荒らす方法が見いだせていないため、貴金属めっき層の厚みを０．５μｍ以下にしないとニッケル層粗化の効果が得られない上、ニッケル層と金層と銀層の厚さの合計を５μｍより薄くすることが出来ていない。また、貴金属めっき層の厚みが薄すぎると、下地の影響が強く出てしまい、半導体素子を接着するためのダイボンディング用エポキシ樹脂が十分に濡れ広がらず十分な接合性が得られない、半導体素子との接合に使用される金属線との金属拡散が十分に行われず接合性が十分に得られない、といった不具合を発生してしまう場合もある。 Moreover, in the thing shown by patent document 3, since the method of fully roughening the surface of a nickel layer was not found, if the thickness of a noble metal plating layer is not made into 0.5 micrometer or less, the effect of nickel layer roughening will be acquired. In addition, the total thickness of the nickel layer, the gold layer, and the silver layer cannot be made thinner than 5 μm. In addition, if the thickness of the noble metal plating layer is too thin, the influence of the substrate will be strong, and the epoxy resin for die bonding for bonding the semiconductor element will not be sufficiently wetted and spread, and sufficient bondability will not be obtained. In some cases, metal diffusion with the metal wire used for bonding to the metal wire is not sufficiently performed and sufficient bondability cannot be obtained.
そこで、本発明は前記課題に鑑みてなされたものであり、その目的とするところは、銀または銀を含む合金のめっきを施したリードフレームで、封止樹脂との密着性が高く、且つ銀または銀を含有する合金めっき層を含んだめっき層全体の厚さを薄くしたリードフレームを提供することである。 Accordingly, the present invention has been made in view of the above problems, and the object of the present invention is a lead frame plated with silver or an alloy containing silver, having high adhesion to a sealing resin and silver. Another object is to provide a lead frame in which the entire plating layer including the alloy plating layer containing silver is thinned.
上記課題を解決するため、本発明のリードフレームは、半導体素子を搭載するリードフレームにおいて、少なくとも半導体素子が搭載されるパッド部上の最表面に銀または銀を含有する合金によるめっき層を有し、その形状が球状の突起群であることを特徴とする。
銀めっき層の最表面に形成される球状の突起群とは、直径１〜４．０μｍ程度の複数の球状の突起を有する性状のことを示す。図１に一例として直径２〜４．０μｍ程度の球状突起を有する銀メッキ層の表面状態を示す。本形状の多くは、お互いが銀めっきにより繋がっているものの、球状を維持し、突起部の下部の断面積よりもその上に形成された球状部分の直径に相当する部分の断面積の方が大きくなっている部分を多く有するため、表面積増大の効果とともに、樹脂が球状突起の下側にまで流入して硬化するため、物理的なアンカー効果をも発揮し良好な密着性を得ることが出来る。なお、球状突起群の直径は上記の大きさに限定されるものではなく、例えば直径０．５〜６．０μｍ程度の範囲で任意に選択可能である。
In order to solve the above problems, a lead frame of the present invention has a plating layer made of silver or an alloy containing silver on at least the outermost surface of the pad portion on which the semiconductor element is mounted in the lead frame on which the semiconductor element is mounted. The shape is a group of spherical protrusions.
The group of spherical protrusions formed on the outermost surface of the silver plating layer indicates a property having a plurality of spherical protrusions having a diameter of about 1 to 4.0 μm. As an example, FIG. 1 shows a surface state of a silver plating layer having a spherical protrusion having a diameter of about 2 to 4.0 μm. Although many of these shapes are connected to each other by silver plating, the cross-sectional area of the portion corresponding to the diameter of the spherical portion formed above the cross-sectional area of the lower portion of the protrusion portion is maintained rather than the spherical shape. Since it has many large parts, the resin flows into the lower side of the spherical protrusion and hardens together with the effect of increasing the surface area, so that it can also exert a physical anchor effect and obtain good adhesion . The diameter of the spherical protrusion group is not limited to the above-described size, and can be arbitrarily selected within a range of, for example, a diameter of about 0.5 to 6.0 μm.
また、本発明のリードフレームにおいては、前記最表面の銀または銀を含有する合金によるめっき層の球状の突起群の形状は、その下地に形成された球状の突起群を有するニッケルによるめっき層により形成されたものであることが好ましい。
ニッケルめっき層に形成される球状の突起群は、直径０．５〜２．０μｍ程度の複数の球状めっき合金で形成される。図２に一例として直径０．５〜１．０μｍ程度の球状突起を有するニッケルめっき層の表面状態を示す。本形状の多くは、下地の接触部分の断面積よりもその上に形成された球状部分の直径に相当する部分の断面積の方が大きくなっている。なお、球状突起群の直径は上記の大きさに限定されるものではなく、例えば直径０．２〜４．０μｍ程度の範囲で任意に選択可能である。
上記銀めっき層上に形成された球状突起は、下地のニッケルめっき層に形成された球状突起の形状を保持したまま、銀めっきにより一回り大きくなった突起が形成される。
Further, in the lead frame of the present invention, the shape of the spherical protrusion group of the plating layer made of the outermost silver or silver-containing alloy is formed by the nickel plating layer having the spherical protrusion group formed on the base. It is preferable that it is formed.
The spherical projection group formed on the nickel plating layer is formed of a plurality of spherical plating alloys having a diameter of about 0.5 to 2.0 μm. FIG. 2 shows the surface state of a nickel plating layer having spherical protrusions having a diameter of about 0.5 to 1.0 μm as an example. In many of these shapes, the cross-sectional area of the portion corresponding to the diameter of the spherical portion formed thereon is larger than the cross-sectional area of the contact portion of the base. The diameter of the spherical protrusion group is not limited to the above-described size, and can be arbitrarily selected within a range of, for example, a diameter of about 0.2 to 4.0 μm.
The spherical protrusion formed on the silver plating layer forms a protrusion that is slightly larger by silver plating while maintaining the shape of the spherical protrusion formed on the underlying nickel plating layer.
また、本発明のリードフレームにおいては、前記ニッケルによるめっき層は、まずレベリング性の良い平滑なニッケルめっきが施され、その平滑なニッケルめっき面上に球状の突起群が形成されたニッケルめっきが施され、更にその上にレベリング性の良いニッケルめっきが施された三層構造であることが好ましい。
なお、レベリング性の良いニッケルめっきとは延展性に優れ、めっき面の表面形状に滑らかに沿うような特性を有するめっきのことをいう。
In the lead frame of the present invention, the nickel plating layer is first subjected to smooth nickel plating with good leveling properties, and nickel plating in which spherical projections are formed on the smooth nickel plating surface. Furthermore, it is preferable to have a three-layer structure on which nickel plating having a good leveling property is applied.
In addition, nickel plating with good leveling refers to plating that is excellent in spreadability and has characteristics that smoothly follow the surface shape of the plated surface.
また、本発明のリードフレームにおいては、前記最表面のめっき層の銀または銀を含有する合金めっき層の厚さは０．５μｍ以上１．０μｍ以下であることが好ましい。 In the lead frame of the present invention, the thickness of the outermost plating layer of silver or the alloy plating layer containing silver is preferably 0.5 μm or more and 1.0 μm or less.
また、本発明のリードフレームにおいては、その基材質が銅合金であることが好ましい。 In the lead frame of the present invention, the base material is preferably a copper alloy.
さらに、本発明のリードフレームの製造方法は、前記本発明のリードフレームの製造方法であって、前記球状の突起群を有するニッケルめっき層を得るためのめっき浴は、ニッケルめっき液中のニッケル濃度を５ｇ／Ｌ以上２０ｇ／Ｌ以下の範囲とし、塩素濃度を１２ｇ／Ｌ以上、２２ｇ／Ｌ以下の範囲としたことを特徴としている。 Furthermore, the manufacturing method of the lead frame of the present invention is the manufacturing method of the lead frame of the present invention, in which the plating bath for obtaining the nickel plating layer having the spherical projection group has a nickel concentration in the nickel plating solution. Is in the range of 5 g / L to 20 g / L and the chlorine concentration is in the range of 12 g / L to 22 g / L.
また、本発明のリードフレームの製造方法は、前記リードフレームの製造方法であって、めっき浴中にニッケルを含有させる構成成分として硫酸ニッケルを用い、また塩素を含有させる構成成分として塩化アンモニウムを用いることが好ましい。 The lead frame manufacturing method of the present invention is the above-described lead frame manufacturing method, wherein nickel sulfate is used as a component for containing nickel in the plating bath, and ammonium chloride is used as a component for containing chlorine. It is preferable.
本発明によれば、最表面の銀または銀を含有する合金によるめっき層が球状の突起群を有するめっき層となるため、単なる凹凸による粗化面よりも更に深部にまで封止樹脂が入り込むことにより、より密着性が高くなる。さらに、最表面に球状突起群を形成させるための下地ニッケルめっき層の球状突起群を効率的に形成できるため、下地の銅の拡散を抑制する厚みまでニッケルめっき層を薄く形成できることから、ニッケルのコストおよび銀または銀を含有する合金のコストを最小化でき、且つめっきの総厚みを最小化したリードフレームを製造することができる。 According to the present invention, since the plating layer made of silver or an alloy containing silver on the outermost surface becomes a plating layer having a spherical projection group, the sealing resin enters deeper than the roughened surface due to simple unevenness. As a result, the adhesion becomes higher. Furthermore, since the spherical protrusion group of the underlying nickel plating layer for forming the spherical protrusion group on the outermost surface can be efficiently formed, the nickel plating layer can be formed thinly to a thickness that suppresses the diffusion of the underlying copper. Lead frames can be manufactured that can minimize the cost and cost of silver or silver-containing alloys and minimize the total thickness of the plating.
以下に、本発明を適用したリードフレーム及びその製造方法について説明する。なお、本発明は、特に限定が無い限り、以下の詳細な説明に限定されるものではない。
本発明のリードフレームのめっき工程は、銅合金の上に下地となるニッケルめっき層と、最表面に接合電極部となる銀または銀を含有する合金のめっき層と、下地ニッケルめっき層と銀または銀を含有する合金の最表面層との接合性を向上させる金属または合金による中間めっき層を形成するリードフレームにおいて、まず、スルファミン酸浴等によってレベリング性の良好な平滑なニッケルめっき層を形成し、次に硫酸ニッケルと塩化アンモニウムからなるニッケルめっき浴によって表面に球状の突起を多数有するニッケルめっき層を形成する。
Hereinafter, a lead frame to which the present invention is applied and a manufacturing method thereof will be described. In addition, this invention is not limited to the following detailed description, unless there is particular limitation.
The lead frame plating process of the present invention includes a nickel plating layer as a base on a copper alloy, a silver or silver-containing alloy plating layer as a bonding electrode portion on the outermost surface, a base nickel plating layer and silver or In a lead frame that forms an intermediate plating layer of a metal or alloy that improves the bondability with the outermost surface layer of an alloy containing silver, first, a smooth nickel plating layer with good leveling properties is formed using a sulfamic acid bath or the like. Next, a nickel plating layer having many spherical protrusions on the surface is formed by a nickel plating bath made of nickel sulfate and ammonium chloride.
球状の突起を多数有するニッケルめっき層を形成するために、ニッケルめっき浴中のニッケル濃度を５ｇ／Ｌ以上２０ｇ／Ｌ以下、塩素濃度を１２ｇ／Ｌ以上２２ｇ／Ｌ以下の範囲とするのが好ましい。特にニッケル濃度が８ｇ／Ｌ以上１５ｇ／Ｌ以下、塩素濃度が１４ｇ／Ｌ以上２０ｇ／Ｌ以下の範囲であることがより好ましい。 In order to form a nickel plating layer having a large number of spherical protrusions, the nickel concentration in the nickel plating bath is preferably in the range of 5 g / L to 20 g / L and the chlorine concentration in the range of 12 g / L to 22 g / L. . In particular, the nickel concentration is more preferably in the range of 8 g / L to 15 g / L and the chlorine concentration is in the range of 14 g / L to 20 g / L.
ニッケルの濃度が５ｇ／Ｌ未満だと、十分なニッケルめっき被膜を形成することができないので好ましくない。ニッケルの濃度が２０ｇ／Ｌよりも高いと、形成されるニッケルめっき被膜が平滑表面となってしまい、凹凸のある表面を得ることができないので好ましくない。塩素濃度が１２ｇ／Ｌ未満だと、陽極が不動態化し印加電圧の上昇が起こるので好ましくない。塩素濃度が２２ｇ／Ｌよりも高いと、被膜硬度が上昇し内部応力も高くなってしまうので好ましくない。 If the nickel concentration is less than 5 g / L, it is not preferable because a sufficient nickel plating film cannot be formed. When the concentration of nickel is higher than 20 g / L, the nickel plating film to be formed becomes a smooth surface, and an uneven surface cannot be obtained. A chlorine concentration of less than 12 g / L is not preferable because the anode is passivated and the applied voltage increases. If the chlorine concentration is higher than 22 g / L, the film hardness is increased and the internal stress is increased, which is not preferable.
次に、球状の突起を多数有するニッケルめっき層の表面を保護するため、スルファミン酸浴等によってごく薄いニッケルめっき層を形成する。次に、銀または銀を含有する合金のめっき層との接合性を向上させるために銀または銀を含有する合金のストライクめっきを施すことが好ましい。そして最表面に、半導体素子との接合性を確保するために、銀または銀を含有する合金のめっき層を形成する。 Next, in order to protect the surface of the nickel plating layer having many spherical protrusions, a very thin nickel plating layer is formed by a sulfamic acid bath or the like. Next, it is preferable to perform strike plating of silver or an alloy containing silver in order to improve the bondability with the plating layer of silver or an alloy containing silver. And in order to ensure bondability with a semiconductor element on the outermost surface, the plating layer of silver or the alloy containing silver is formed.
また、ニッケルめっき層と銀または銀を含有する合金のめっき層との接合性を向上させるために用いる銀または銀を含有する合金のストライクめっきの代替として、パラジウムまたはパラジウムを含有する合金のめっき層を用いることにより、ニッケルめっき層と銀または銀を含有する合金のめっき層を好適に接合させることも出来る。 In addition, as an alternative to strike plating of silver or a silver-containing alloy used to improve the bondability between the nickel plating layer and silver or a silver-containing alloy plating layer, the plating layer of palladium or an alloy containing palladium is used. By using this, the nickel plating layer and the plating layer of silver or an alloy containing silver can be suitably bonded.
さらに、半導体素子との接合時に用いる金属線との接合性を向上させるために金または金を含有する合金のめっき層を銀または銀を含有する合金のめっき層の下に形成することもある。 Furthermore, in order to improve the bondability with a metal wire used for bonding to a semiconductor element, a plating layer of gold or an alloy containing gold may be formed under the plating layer of silver or an alloy containing silver.
上記のいずれにおいても、半導体素子を接着するためのダイボンディング用エポキシ樹脂の濡れ性を確保するため、また、半導体素子との接合に使用される金属線と接合性を確保するため、銀または銀を含有する合金めっき層の厚さは０．５μｍ以上必要であり、さらにコストの観点から、０．５μｍ〜１．０μｍの範囲にあることが好ましい。 In any of the above cases, silver or silver is used to ensure the wettability of the epoxy resin for die bonding for bonding the semiconductor element, and to ensure the bondability with the metal wire used for bonding to the semiconductor element. The thickness of the alloy plating layer containing N should be 0.5 μm or more, and is preferably in the range of 0.5 μm to 1.0 μm from the viewpoint of cost.
（実施例１）
リードフレーム用銅合金として、厚さ０．２ｍｍ、幅１８０ｍｍの帯状銅材（株式会社神戸製鋼所製：ＫＬＦ−１９４）を用いて、この銅材の両面に、厚さ２５μｍのレジスト層（旭化成イーマテリアルズ株式会社製：ＡＱ−２５５８）を形成し、所定の形状のマスクを用いて露光した後、現像、エッチング処理を行い、めっき用マスクを形成したリードフレームを得た。
Example 1
As a copper alloy for a lead frame, a strip-shaped copper material having a thickness of 0.2 mm and a width of 180 mm (manufactured by Kobe Steel Co., Ltd .: KLF-194) was used, and a resist layer (Asahi Kasei Co., Ltd.) having a thickness of 25 μm was formed on both surfaces of the copper material. EMaterials Co., Ltd .: AQ-2558) was formed and exposed using a mask having a predetermined shape, followed by development and etching to obtain a lead frame on which a plating mask was formed.
このめっき用マスクを形成したリードフレームに対し、アルカリおよび酸によって前処理を施した後、次のように電気めっき処理を施した。
まず、スルファミン酸ニッケルと塩化ニッケル、ホウ酸からなるニッケルめっき浴を用いて、電流密度として５Ａ／ｄｍ2で３分間めっきを行い、厚さが約０．５μｍの平滑なニッケルめっき層を形成した。
The lead frame on which the plating mask was formed was pretreated with alkali and acid, and then electroplated as follows.
First, using a nickel plating bath made of nickel sulfamate, nickel chloride, and boric acid, plating was performed at a current density of 5 A / dm 2 for 3 minutes to form a smooth nickel plating layer having a thickness of about 0.5 μm. .
次に、ニッケル濃度１３ｇ／Ｌの硫酸ニッケルと、塩素濃度１７ｇ／Ｌの塩化アンモニウムからなるニッケルめっき浴を用いて、電流密度として３０Ａ／ｄｍ2で３０秒間めっきを行い、球状の突起を多数有する厚さが約０．５μｍのニッケルめっき層を形成した。 Next, using a nickel plating bath made of nickel sulfate having a nickel concentration of 13 g / L and ammonium chloride having a chlorine concentration of 17 g / L, plating was performed at a current density of 30 A / dm 2 for 30 seconds, and many spherical protrusions were formed. A nickel plating layer having a thickness of about 0.5 μm was formed.
次に、表面の保護を目的として、スルファミン酸ニッケルと塩化ニッケル、ホウ酸からなるニッケルめっき浴を用いて、電流密度として５Ａ／ｄｍ2で３０秒間めっきを行い、厚さが約０．１μｍのニッケルめっき層を形成して、球状の突起群が形成された三層めっき構造を得た。 Next, for the purpose of protecting the surface, plating was performed at a current density of 5 A / dm 2 for 30 seconds using a nickel plating bath made of nickel sulfamate, nickel chloride, and boric acid, and the thickness was about 0.1 μm. A nickel plating layer was formed to obtain a three-layer plating structure in which spherical protrusions were formed.
その後に、この球状の突起群が形成されたニッケルめっき層の上に青化銀および青化カリウムからなるストライク銀めっき浴を用いて、電流密度として１５Ａ／ｄｍ2で３０秒間めっきを行い、下地となるニッケルめっき層と銀めっき層との密着性を確保してニッケルめっき層の球状の突起群の形状に沿った形状の球状の突起群を有する銀ストライクめっき層を形成した。 Thereafter, using a strike silver plating bath made of silver bromide and potassium bromide on the nickel plating layer on which the spherical projections are formed, plating is performed at a current density of 15 A / dm 2 for 30 seconds. A silver strike plating layer having a spherical projection group having a shape along the shape of the spherical projection group of the nickel plating layer while ensuring the adhesion between the nickel plating layer and the silver plating layer was formed.
さらに銀ストライクめっき層の上に、青化銀、青化銀カリウム、青化カリウムからなる銀めっき浴を用いて、電流密度として１０Ａ／ｄｍ2で１分３０秒間めっきを行い、ニッケルめっき層の球状の突起群の形状に沿った形状の球状の突起群を有する厚さが約０．５μｍの銀めっき層を形成し、リードフレームの製造を完了した。 Furthermore, on the silver strike plating layer, using a silver plating bath composed of silver bromide, potassium blue bromide, and potassium bromide, plating was performed at a current density of 10 A / dm 2 for 1 minute 30 seconds, and the nickel plating layer A silver plating layer having a thickness of about 0.5 μm and having a spherical protrusion group shaped along the shape of the spherical protrusion group was formed, and the manufacture of the lead frame was completed.
完成したリードフレームの銀めっき層の上に、評価用のΦ２ｍｍの円筒形の樹脂モールドを形成した。この樹脂に対し、ボンドテスタとしてＤａｇｅ Ｓｅｒｉｅｓ４０００（Ｄａｇｅ社製）を用いてシェア強度を測定することで樹脂密着性の評価を行ったところ、密着強度は２３．０ＭＰａで良好な密着性を示した。 A cylindrical resin mold of Φ2 mm for evaluation was formed on the silver plating layer of the completed lead frame. The resin adhesion was evaluated by measuring the shear strength of this resin using a Dage Series 4000 (manufactured by Dage) as a bond tester. The adhesion strength was 23.0 MPa and good adhesion was exhibited.
また、完成したリードフレームの銀めっき層の上に評価用の金属線を接合した。金属線の接合にはワイヤボンダとしてＵＴＣ−１０００Ｓｕｐｅｒ（新川社製）を、金属線には純度４Ｎ、直径２０μｍの金線（住友金属鉱山社製）を用いた。この金属線の２ｎｄ側のスティッチプル強度をＤａｇｅ Ｓｅｒｉｅｓ４０００（Ｄａｇｅ社製）を用いて測定したところ、６．３ｇｆで良好な接合性を示した。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．６μｍであった。
Further, a metal wire for evaluation was joined on the silver plating layer of the completed lead frame. As a wire bonder, UTC-1000 Super (manufactured by Shinkawa) was used for joining the metal wires, and a gold wire (manufactured by Sumitomo Metal Mining) having a purity of 4N and a diameter of 20 μm was used as the metal wires. When the stitch pull strength on the 2nd side of the metal wire was measured using Dage Series 4000 (manufactured by Dage), good bondability was exhibited at 6.3 gf.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.6 μm.
（実施例２）
リードフレーム上にニッケルめっき処理を施す工程の内、球状の突起を多数有するニッケルめっき層を形成させる工程において、ニッケル濃度１３ｇ／Ｌの硫酸ニッケルに代えてニッケル濃度５ｇ／Ｌの硫酸ニッケルを用いた以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Example 2)
Among the steps of performing nickel plating on the lead frame, in the step of forming a nickel plating layer having many spherical protrusions, nickel sulfate with a nickel concentration of 5 g / L was used instead of nickel sulfate with a nickel concentration of 13 g / L. Except for the above, electroplating was performed in the same manner as in Example 1 to complete the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着強度は１４．７ＭＰａで良好な密着性を示した。また、金属線の２ｎｄ側のスティッチプル強度は６．３ｇｆで良好な接合性を示した。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．６μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion strength of the silver plating layer of the completed lead frame was 14.7 MPa and showed good adhesion. Further, the stitch pull strength on the 2nd side of the metal wire was 6.3 gf, and good bondability was exhibited.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.6 μm.
（実施例３）
リードフレーム上にニッケルめっき処理を施す工程の内、球状の突起を多数有するニッケルめっき層を形成させる工程において、ニッケル濃度１３ｇ／Ｌの硫酸ニッケルに代えてニッケル濃度２０ｇ／Ｌの硫酸ニッケルを用いた以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Example 3)
Among the steps of performing nickel plating on the lead frame, in the step of forming a nickel plating layer having many spherical protrusions, nickel sulfate having a nickel concentration of 20 g / L was used instead of nickel sulfate having a nickel concentration of 13 g / L. Except for the above, electroplating was performed in the same manner as in Example 1 to complete the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着強度は１５．２ＭＰａで良好な密着性を示した。また、金属線の２ｎｄ側のスティッチプル強度は６．５ｇｆで良好な接合性を示した。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．６μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion strength of the silver plating layer of the completed lead frame was 15.2 MPa, which showed good adhesion. Further, the stitch pull strength on the 2nd side of the metal wire was 6.5 gf, and good bondability was exhibited.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.6 μm.
（実施例４）
リードフレーム上にニッケルめっき処理を施す工程の内、球状の突起を多数有するニッケルめっき層を形成させる工程において、塩素濃度１７ｇ／Ｌの塩化アンモニウムに代えて塩素濃度１２ｇ／Ｌの塩化アンモニウムを用いた以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
Example 4
In the step of forming a nickel plating layer having many spherical protrusions in the step of performing nickel plating on the lead frame, ammonium chloride having a chlorine concentration of 12 g / L was used instead of ammonium chloride having a chlorine concentration of 17 g / L. Except for the above, electroplating was performed in the same manner as in Example 1 to complete the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着強度は２２．３ＭＰａで良好な密着性を示した。また、金属線の２ｎｄ側のスティッチプル強度は６．２ｇｆで良好な接合性を示した。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．６μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion strength of the silver plating layer of the completed lead frame was 22.3 MPa, indicating good adhesion. Further, the stitch pull strength on the 2nd side of the metal wire was 6.2 gf, and good bondability was exhibited.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.6 μm.
（実施例５）
リードフレーム上にニッケルめっき処理を施す工程の内、球状の突起を多数有するニッケルめっき層を形成させる工程において、塩素濃度１７ｇ／Ｌの塩化アンモニウムに代えて塩素濃度２２ｇ／Ｌの塩化アンモニウムを用いた以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Example 5)
In the step of forming a nickel plating layer having many spherical protrusions in the step of performing nickel plating on the lead frame, ammonium chloride having a chlorine concentration of 22 g / L was used instead of ammonium chloride having a chlorine concentration of 17 g / L. Except for the above, electroplating was performed in the same manner as in Example 1 to complete the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着強度は２４．１ＭＰａで良好な密着性を示した。また、金属線の２ｎｄ側のスティッチプル強度は５．３ｇｆで良好な接合性を示した。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．６μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion strength of the silver plating layer of the completed lead frame was 24.1 MPa, indicating good adhesion. Further, the stitch pull strength on the 2nd side of the metal wire was 5.3 gf, and good bondability was exhibited.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.6 μm.
（実施例６）
リードフレーム上にニッケルめっき層の球状の突起群の形状に沿った形状の球状の突起群を有する銀めっき層を形成させる工程の内、銀ストライクめっき層の上に青化銀、青化銀カリウム、青化カリウムからなる銀めっき浴を用いて、電流密度として１０Ａ／ｄｍ2で３分間めっきを行い、厚さが約１．０μｍの銀めっき層を形成した以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Example 6)
In the process of forming a silver plating layer having a spherical projection group having a shape along the shape of the spherical projection group of the nickel plating layer on the lead frame, silver bromide and silver bromide potassium are formed on the silver strike plating layer. Using the silver plating bath made of potassium blue, the same as in Example 1 except that the plating was carried out at a current density of 10 A / dm 2 for 3 minutes to form a silver plating layer having a thickness of about 1.0 μm. The electroplating process was applied to complete the lead frame manufacturing.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着強度は２２．７ＭＰａで良好な密着性を示した。また、金属線の２ｎｄ側のスティッチプル強度は６．７ｇｆで良好な接合性を示した。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は２．１μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion strength of the silver plating layer of the completed lead frame was 22.7 MPa, which showed good adhesion. Further, the stitch pull strength on the 2nd side of the metal wire was 6.7 gf, and good bondability was exhibited.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 2.1 μm.
（比較例１）
リードフレーム上にニッケルめっき処理を施す工程の内、球状の突起を多数有するニッケルめっき層を形成させる工程において、ニッケル濃度１３ｇ／Ｌの硫酸ニッケルに代えてニッケル濃度３ｇ／Ｌの硫酸ニッケルを用いた以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Comparative Example 1)
Among the steps of performing nickel plating on the lead frame, in the step of forming a nickel plating layer having many spherical protrusions, nickel sulfate with a nickel concentration of 3 g / L was used instead of nickel sulfate with a nickel concentration of 13 g / L. Except for the above, electroplating was performed in the same manner as in Example 1 to complete the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着強度は７．７ＭＰａであり、これは実用においては十分な密着性を示しているとは言い難い。金属線の２ｎｄ側のスティッチプル強度は６．１ｇｆで良好な接合性を示した。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．６μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion strength of the silver plating layer of the completed lead frame is 7.7 MPa, which is said to indicate sufficient adhesion in practical use. hard. The stitch pull strength on the 2nd side of the metal wire was 6.1 gf, indicating good bondability.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.6 μm.
（比較例２）
リードフレーム上にニッケルめっき処理を施す工程の内、球状の突起を多数有するニッケルめっき層を形成させる工程において、ニッケル濃度１３ｇ／Ｌの硫酸ニッケルに代えてニッケル濃度２５ｇ／Ｌの硫酸ニッケルを用いた以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Comparative Example 2)
Among the steps of performing nickel plating on the lead frame, in the step of forming a nickel plating layer having many spherical protrusions, nickel sulfate having a nickel concentration of 25 g / L was used instead of nickel sulfate having a nickel concentration of 13 g / L. Except for the above, electroplating was performed in the same manner as in Example 1 to complete the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着性は７．３ＭＰａであり、これは実用においては十分な密着性を示しているとは言い難い。金属線の２ｎｄ側のスティッチプル強度は６．３ｇｆで、良好な接合性を示した。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．６μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion of the silver plating layer of the completed lead frame is 7.3 MPa, which is said to indicate sufficient adhesion in practical use. hard. The stitch pull strength on the 2nd side of the metal wire was 6.3 gf, indicating a good bondability.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.6 μm.
（比較例３）
リードフレーム上にニッケルめっき処理を施す工程の内、球状の突起を多数有するニッケルめっき層を形成させる工程において、塩素濃度１７ｇ／Ｌの塩化アンモニウムに代えて塩素濃度１０ｇ／Ｌの塩化アンモニウムを用いた以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Comparative Example 3)
Among the steps of performing nickel plating on the lead frame, in the step of forming a nickel plating layer having many spherical protrusions, ammonium chloride having a chlorine concentration of 10 g / L was used instead of ammonium chloride having a chlorine concentration of 17 g / L. Except for the above, electroplating was performed in the same manner as in Example 1 to complete the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着性は２３．０ＭＰａであり、良好な密着性を示した。金属線の２ｎｄ側のスティッチプル強度は６．２ｇｆで、良好な接合性を示した。しかしながら、本条件で球状の突起を多数有するニッケルめっきを行う際、電圧の上昇が確認された。この電圧の上昇は陽極の不導体化が原因であり、継続して処理することにより陽極の不導体化が進行し、それに伴い電圧が継続して上昇することにより、非常に高電圧となってしまうため、安全上好ましくない。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．６μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion of the silver plating layer of the completed lead frame was 23.0 MPa, indicating good adhesion. The stitch pull strength on the 2nd side of the metal wire was 6.2 gf, indicating a good bondability. However, an increase in voltage was confirmed when nickel plating having many spherical protrusions was performed under these conditions. This increase in voltage is due to the non-conductivity of the anode, and the anode becomes non-conductive as a result of continuous treatment, and the voltage continuously rises accordingly, resulting in a very high voltage. Therefore, it is not preferable for safety.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.6 μm.
（比較例４）
リードフレーム上にニッケルめっき処理を施す工程の内、球状の突起を多数有するニッケルめっき層を形成させる工程において、塩素濃度１７ｇ／Ｌの塩化アンモニウムに代えて塩素濃度２５ｇ／Ｌの塩化アンモニウムを用いた以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Comparative Example 4)
In the step of forming a nickel plating layer having many spherical protrusions in the step of performing nickel plating on the lead frame, ammonium chloride having a chlorine concentration of 25 g / L was used instead of ammonium chloride having a chlorine concentration of 17 g / L. Except for the above, electroplating was performed in the same manner as in Example 1 to complete the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着性は２２．８ＭＰａであり、良好な密着性を示した。金属線の２ｎｄ側のスティッチプル強度は４．８ｇｆであり、これは実用においては十分な接合性を示しているとは言い難い。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．６μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion of the silver plating layer of the completed lead frame was 22.8 MPa, indicating good adhesion. The stitch pull strength on the 2nd side of the metal wire is 4.8 gf, which cannot be said to show sufficient bondability in practical use.
In addition, the average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.6 μm.
（比較例５）
リードフレーム上にニッケルめっき層の球状の突起群の形状に沿った形状の球状の突起群を有する銀めっき層を形成させる工程の内、銀ストライクめっき層の上に、青化銀、青化銀カリウム、青化カリウムからなる銀めっき浴を用いて、電流密度として１０Ａ／ｄｍ2で１分間めっきを行い、厚さが約０．３μｍの銀めっき層を形成した以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Comparative Example 5)
In the process of forming a silver plating layer having a spherical projection group having a shape along the shape of the spherical projection group of the nickel plating layer on the lead frame, silver bromide, silver bromide is formed on the silver strike plating layer. Example 1 except that a silver plating bath made of potassium and potassium bromide was used for plating for 1 minute at a current density of 10 A / dm 2 to form a silver plating layer having a thickness of about 0.3 μm. The electroplating process was applied by this method, and the manufacture of the lead frame was completed.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着性は２３．２ＭＰａであり、良好な密着性を示した。金属線の２ｎｄ側のスティッチプル強度は３．９ｇｆであり、これは実用においては十分な接合性を示しているとは言い難い。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は１．４μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion of the silver plating layer of the completed lead frame was 23.2 MPa, indicating good adhesion. The stitch pull strength on the 2nd side of the metal wire is 3.9 gf, which cannot be said to show sufficient bondability in practical use.
In addition, the average plating thickness of the three layers of the nickel plating layer, the silver strike plating layer, and the silver plating layer was 1.4 μm.
（比較例６）
リードフレーム上にニッケルめっき層の球状の突起群の形状に沿った形状の球状の突起群を有する銀めっき層を形成させる工程の内、銀ストライクめっき層の上に、青化銀、青化銀カリウム、青化カリウムからなる銀めっき浴を用いて、電流密度として１０Ａ／ｄｍ2で４分３０秒間めっきを行い、厚さが約１．５μｍの銀めっき層を形成した以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Comparative Example 6)
In the process of forming a silver plating layer having a spherical projection group having a shape along the shape of the spherical projection group of the nickel plating layer on the lead frame, silver bromide, silver bromide is formed on the silver strike plating layer. Example 1 except that plating was performed at a current density of 10 A / dm 2 for 4 minutes and 30 seconds using a silver plating bath composed of potassium and potassium bromide to form a silver plating layer having a thickness of about 1.5 μm. The electroplating process was performed in the same manner as described above to complete the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着性は２１．３ＭＰａであり、良好な密着性を示した。金属線の２ｎｄ側のスティッチプル強度は６．６ｇｆであり、良好な接合性を示した。しかしながら、銀めっき層が厚くなったことにより、下地の球状効果が弱くなり、実施例１よりは密着性が劣り、接合性は実施例１と大差ないことから、銀めっき層を１．０μｍよりも厚くすることは特性改善がなくコストアップに繋がり、かつ従来品と同等かそれ以上のめっき厚になってしまうので好ましくない。
ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は２．６μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion of the silver plating layer of the completed lead frame was 21.3 MPa, indicating a good adhesion. The stitch pull strength on the 2nd side of the metal wire was 6.6 gf, indicating good bondability. However, as the silver plating layer becomes thicker, the spherical effect of the base is weakened, the adhesiveness is inferior to that of Example 1, and the bonding property is not much different from that of Example 1, so that the silver plating layer is more than 1.0 μm. However, it is not preferable to make the thickness thicker, because there is no improvement in characteristics, leading to an increase in cost, and a plating thickness equal to or greater than that of the conventional product.
The average plating thickness of the three layers including the nickel plating layer, the silver strike plating layer, and the silver plating layer was 2.6 μm.
（比較例７）
リードフレーム上にニッケルめっき処理を施す工程において、最初のスルファミン酸ニッケルと塩化ニッケル、ホウ酸からなるニッケルめっき浴を用いて、電流密度を５Ａ／ｄｍ2で６分間めっきを行い、厚さが約１．０μｍの平滑なニッケルめっき層のみを形成して三層めっき構造としなかった以外は、実施例１と同様の方法で電気めっき処理を施し、リードフレームの製造を完了した。
(Comparative Example 7)
In the process of nickel plating on the lead frame, the first nickel plating bath composed of nickel sulfamate, nickel chloride and boric acid is used for plating for 6 minutes at a current density of 5 A / dm 2 and the thickness is about Electroplating was performed in the same manner as in Example 1 except that only a smooth nickel plating layer having a thickness of 1.0 μm was not formed to form a three-layer plating structure, thereby completing the manufacture of the lead frame.
実施例１と同様にして樹脂密着性を評価した結果、完成したリードフレームの銀めっき層の樹脂密着性は７．１ＭＰａであり、これは実用においては十分な密着性を示しているとは言い難い。金属線の２ｎｄ側のスティッチプル強度は６．６ｇｆで、良好な接合性を示した。
なお、ニッケルめっき層と銀ストライクめっき層と銀めっき層の３層合計の平均めっき厚は２．０μｍであった。
As a result of evaluating the resin adhesion in the same manner as in Example 1, the resin adhesion of the silver plating layer of the completed lead frame is 7.1 MPa, which indicates that this shows sufficient adhesion in practical use. hard. The stitch pull strength on the 2nd side of the metal wire was 6.6 gf, indicating good bondability.
In addition, the average plating thickness of the three layers of the nickel plating layer, the silver strike plating layer, and the silver plating layer was 2.0 μm.
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| JP2017089004A (en) * | 2015-11-06 | 2017-05-25 | 株式会社ワールドメタル | Bonding member |
| JP2018021221A (en) * | 2016-08-02 | 2018-02-08 | 古河電気工業株式会社 | Silver coated material |
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