JP2015088517A - 量子カスケードレーザ - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 71
- 239000007924 injection Substances 0.000 claims abstract description 42
- 238000002347 injection Methods 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 230000007704 transition Effects 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 3
- 239000000243 solution Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 215
- 239000010410 layer Substances 0.000 description 169
- 230000006866 deterioration Effects 0.000 description 23
- 238000000034 method Methods 0.000 description 23
- 230000004888 barrier function Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 230000004075 alteration Effects 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- 239000012792 core layer Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001803 electron scattering Methods 0.000 description 2
- 230000005274 electronic transitions Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0285—Coatings with a controllable reflectivity
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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Abstract
【解決手段】 半導体基板10と、基板10上に設けられて量子井戸発光層と注入層とが交互に積層されたカスケード構造を有する活性層15とを備え、基板10を含む基体部20と、活性層15を含むストライプ状のリッジ部25とを有して量子カスケードレーザ1Aを構成する。また、レーザ1Aの共振方向の端面11上に、リッジ端面上から基体端面上にわたって反射制御膜30を形成するとともに、基体端面上において、基体端面のリッジ部25側の第1辺に隣接する第2辺、第3辺、及び第1辺に対向する第4辺について、それらの3辺のそれぞれから所定幅の近傍領域を除く領域に反射制御膜30が形成されている構成とする。
【選択図】 図1
Description
15…活性層、16…単位積層体、17…量子井戸発光層、18…注入層、20…基体部、21…分割ライン、25…リッジ部、30…反射制御膜、31…基体側膜部、32…リッジ側膜部、33、34…付加膜部、50…InP下部クラッド層、51…InGaAs下部コア層、52…InGaAs上部コア層、53…InP上部クラッド層、54…InGaAsコンタクト層、
60…レーザバー固定ジグ、61…枠体、62…固定バー、63…固定バネ、65…板状マスク(スリット板)、66…スリット、68…棒状マスク。
Claims (6)
- 半導体基板と、
前記半導体基板上に設けられ、量子井戸発光層及び注入層からなる単位積層体が多段に積層されることで前記量子井戸発光層と前記注入層とが交互に積層されたカスケード構造を有し、量子井戸構造でのサブバンド間遷移によって光を生成する活性層とを備え、
前記半導体基板を含む基体部と、前記活性層を含んで前記基体部上に設けられ、前記活性層で生成される所定波長の光に対するレーザ共振器構造における共振方向にストライプ状に延びるリッジ部とを有して構成され、
前記共振方向において互いに対向する第1端面及び第2端面のうちで少なくとも前記第1端面上に、前記活性層の端部を含む前記リッジ部のリッジ端面上から前記基体部の基体端面上にわたって反射制御膜が形成されているとともに、
前記基体端面上において、前記基体端面の前記リッジ部側の第1辺、前記第1辺に隣接する第2辺、第3辺、及び前記第1辺に対向する第4辺について、前記第2辺から所定幅の領域、前記第3辺から所定幅の領域、及び前記第4辺から所定幅の領域を除く領域に、前記反射制御膜が形成されていることを特徴とする量子カスケードレーザ。 - 前記反射制御膜は、その周縁部において膜厚が減少する断面形状に形成されていることを特徴とする請求項1記載の量子カスケードレーザ。
- 前記反射制御膜は、前記基体端面上から前記基体部の上面上に、及び前記リッジ端面上から前記リッジ部の上面上、両側面上にそれぞれ回り込むように付加的に形成された付加膜部を有することを特徴とする請求項1または2記載の量子カスケードレーザ。
- 前記反射制御膜は、少なくとも1層のCeO2膜を含むことを特徴とする請求項1〜3のいずれか一項記載の量子カスケードレーザ。
- 前記反射制御膜は、低屈折率膜と、高屈折率膜とが交互に積層された多層膜であることを特徴とする請求項1〜4のいずれか一項記載の量子カスケードレーザ。
- 前記反射制御膜は、前記所定波長の光に対する反射防止膜、または前記所定波長の光を所定の反射率で反射する反射膜であることを特徴とする請求項1〜5のいずれか一項記載の量子カスケードレーザ。
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JP2013223262A JP6163080B2 (ja) | 2013-10-28 | 2013-10-28 | 量子カスケードレーザ |
US14/520,500 US9276381B2 (en) | 2013-10-28 | 2014-10-22 | Quantum cascade laser |
DE102014221915.9A DE102014221915B4 (de) | 2013-10-28 | 2014-10-28 | Quantenkaskadenlaser |
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Cited By (5)
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JP2019004105A (ja) * | 2017-06-19 | 2019-01-10 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法 |
JP2019009225A (ja) * | 2017-06-22 | 2019-01-17 | 住友電気工業株式会社 | 量子カスケード半導体レーザ |
JP2019507506A (ja) * | 2016-03-03 | 2019-03-14 | サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィクCentre National De La Recherche Scientifique | 量子カスケードレーザ |
WO2021200550A1 (ja) * | 2020-04-02 | 2021-10-07 | 浜松ホトニクス株式会社 | 量子カスケードレーザ素子、量子カスケードレーザ装置及び量子カスケードレーザ装置の製造方法 |
JP2022507809A (ja) * | 2019-05-28 | 2022-01-18 | 廈門三安光電有限公司 | レーザーダイオードとその製造方法 |
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WO2021200550A1 (ja) * | 2020-04-02 | 2021-10-07 | 浜松ホトニクス株式会社 | 量子カスケードレーザ素子、量子カスケードレーザ装置及び量子カスケードレーザ装置の製造方法 |
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JP6163080B2 (ja) | 2017-07-12 |
DE102014221915A1 (de) | 2015-04-30 |
US9276381B2 (en) | 2016-03-01 |
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