JP2015087115A - 中性子数分析装置および放射線計測装置 - Google Patents

中性子数分析装置および放射線計測装置 Download PDF

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JP2015087115A
JP2015087115A JP2013223134A JP2013223134A JP2015087115A JP 2015087115 A JP2015087115 A JP 2015087115A JP 2013223134 A JP2013223134 A JP 2013223134A JP 2013223134 A JP2013223134 A JP 2013223134A JP 2015087115 A JP2015087115 A JP 2015087115A
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neutron
energy
reaction
neutrons
gamma ray
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JP2015087115A5 (enExample
Inventor
耕一 岡田
Koichi Okada
耕一 岡田
田所　孝広
Takahiro Tadokoro
孝広 田所
名雲　靖
Yasushi Nagumo
名雲　　靖
上野　雄一郎
Yuichiro Ueno
雄一郎 上野
高橋　勲
Isao Takahashi
勲 高橋
崇章 石津
Takaaki Ishizu
崇章 石津
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Hitachi GE Nuclear Energy Ltd
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Hitachi GE Nuclear Energy Ltd
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JP2013223134A 2013-10-28 2013-10-28 中性子数分析装置および放射線計測装置 Pending JP2015087115A (ja)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017043561A1 (ja) * 2015-09-10 2017-03-16 三菱瓦斯化学株式会社 化合物、樹脂、レジスト組成物又は感放射線性組成物、レジストパターン形成方法、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、回路パターンの形成方法、及び、精製方法
CN107247286A (zh) * 2017-05-16 2017-10-13 北京大学 一种快中子能谱测量系统及方法
US10745372B2 (en) 2014-12-25 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
CN113126141A (zh) * 2019-12-31 2021-07-16 南京即衡科技发展有限公司 一种便携式中子及伽马射线剂量测量装置
US11137686B2 (en) 2015-08-31 2021-10-05 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
US11143962B2 (en) 2015-08-31 2021-10-12 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method
US11256170B2 (en) 2015-03-31 2022-02-22 Mitsubishi Gas Chemical Company, Inc. Compound, resist composition, and method for forming resist pattern using it
US11480877B2 (en) 2015-03-31 2022-10-25 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, and polyphenol compound used therein
CN116184515A (zh) * 2022-12-15 2023-05-30 中国科学院空间应用工程与技术中心 一种地外探测用脉冲中子元素扫描分析系统

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114382A (en) * 1980-02-15 1981-09-08 Nippon Telegr & Teleph Corp <Ntt> Neutron detecting device of semiconductor
JPS5770197U (enExample) * 1980-10-17 1982-04-27
JPS5785269A (en) * 1980-11-18 1982-05-27 Fuji Electric Co Ltd Semiconductor radiation detector
JPS57151882A (en) * 1981-03-14 1982-09-20 Nippon Atom Ind Group Co Ltd Neutron counting device for nuclear fusion reactor
JPS57205098U (enExample) * 1976-10-14 1982-12-27
JPS61176876A (ja) * 1985-01-31 1986-08-08 Nippon Atom Ind Group Co Ltd 使用済燃料集合体の放射線測定装置
JPH0836058A (ja) * 1994-07-22 1996-02-06 Matsushita Electric Ind Co Ltd ポケット線量計の感度チェック装置
JP2001349951A (ja) * 2000-06-07 2001-12-21 ▲高▼野 直人 中性子検出装置
WO2013066882A1 (en) * 2011-11-01 2013-05-10 Slaughter David M Neutron spectrometer

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57205098U (enExample) * 1976-10-14 1982-12-27
JPS56114382A (en) * 1980-02-15 1981-09-08 Nippon Telegr & Teleph Corp <Ntt> Neutron detecting device of semiconductor
JPS5770197U (enExample) * 1980-10-17 1982-04-27
JPS5785269A (en) * 1980-11-18 1982-05-27 Fuji Electric Co Ltd Semiconductor radiation detector
JPS57151882A (en) * 1981-03-14 1982-09-20 Nippon Atom Ind Group Co Ltd Neutron counting device for nuclear fusion reactor
JPS61176876A (ja) * 1985-01-31 1986-08-08 Nippon Atom Ind Group Co Ltd 使用済燃料集合体の放射線測定装置
JPH0836058A (ja) * 1994-07-22 1996-02-06 Matsushita Electric Ind Co Ltd ポケット線量計の感度チェック装置
JP2001349951A (ja) * 2000-06-07 2001-12-21 ▲高▼野 直人 中性子検出装置
WO2013066882A1 (en) * 2011-11-01 2013-05-10 Slaughter David M Neutron spectrometer

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10745372B2 (en) 2014-12-25 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
US11480877B2 (en) 2015-03-31 2022-10-25 Mitsubishi Gas Chemical Company, Inc. Resist composition, method for forming resist pattern, and polyphenol compound used therein
US11256170B2 (en) 2015-03-31 2022-02-22 Mitsubishi Gas Chemical Company, Inc. Compound, resist composition, and method for forming resist pattern using it
US11137686B2 (en) 2015-08-31 2021-10-05 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
US11143962B2 (en) 2015-08-31 2021-10-12 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method
WO2017043561A1 (ja) * 2015-09-10 2017-03-16 三菱瓦斯化学株式会社 化合物、樹脂、レジスト組成物又は感放射線性組成物、レジストパターン形成方法、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、回路パターンの形成方法、及び、精製方法
US11243467B2 (en) 2015-09-10 2022-02-08 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
JPWO2017043561A1 (ja) * 2015-09-10 2018-08-09 三菱瓦斯化学株式会社 化合物、樹脂、レジスト組成物又は感放射線性組成物、レジストパターン形成方法、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、回路パターンの形成方法、及び、精製方法
US11572430B2 (en) 2015-09-10 2023-02-07 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
CN107247286B (zh) * 2017-05-16 2019-06-07 北京大学 一种快中子能谱测量系统及方法
CN107247286A (zh) * 2017-05-16 2017-10-13 北京大学 一种快中子能谱测量系统及方法
CN113126141A (zh) * 2019-12-31 2021-07-16 南京即衡科技发展有限公司 一种便携式中子及伽马射线剂量测量装置
CN116184515A (zh) * 2022-12-15 2023-05-30 中国科学院空间应用工程与技术中心 一种地外探测用脉冲中子元素扫描分析系统

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