JP2015082659A - シリコン太陽電池のモジュールレベル処理 - Google Patents
シリコン太陽電池のモジュールレベル処理 Download PDFInfo
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- 238000012545 processing Methods 0.000 title description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 15
- 229910052710 silicon Inorganic materials 0.000 title description 15
- 239000010703 silicon Substances 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 65
- 239000012790 adhesive layer Substances 0.000 claims abstract description 58
- 239000010410 layer Substances 0.000 claims abstract description 56
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 21
- 239000013464 silicone adhesive Substances 0.000 claims description 15
- 238000007872 degassing Methods 0.000 claims description 14
- 238000010849 ion bombardment Methods 0.000 claims description 7
- 238000000862 absorption spectrum Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 23
- 230000001070 adhesive effect Effects 0.000 abstract description 23
- 238000010943 off-gassing Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 70
- 210000002381 plasma Anatomy 0.000 description 54
- 230000008569 process Effects 0.000 description 24
- 238000009832 plasma treatment Methods 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 230000008901 benefit Effects 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 230000006378 damage Effects 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- NTWSIWWJPQHFTO-AATRIKPKSA-N (2E)-3-methylhex-2-enoic acid Chemical compound CCC\C(C)=C\C(O)=O NTWSIWWJPQHFTO-AATRIKPKSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000007539 photo-oxidation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (15)
- 太陽電池のモジュールレベル処理の方法であって、
接着層の手段により、少なくとも1つの結晶シリコン太陽電池基板をキャリアに接着し、これにより接着層の一部を被覆されない状態で残す工程と、
接着工程の後に、接着層の被覆されない部分と少なくとも1つの結晶シリコン太陽電池基板をプラズマに露出させる工程と、
少なくとも1つの結晶シリコン太陽電池基板の表面部分を除去する工程とを含む方法。 - 接着層の被覆されない部分と、少なくとも1つの結晶シリコン太陽電池基板とをプラズマに露出させる工程は、イオン衝撃への露出を含む請求項1に記載の方法。
- 少なくとも1つの結晶シリコン太陽電池基板は、表側がキャリアに向かうように配置される請求項1または2に記載の方法。
- 少なくとも1つの結晶シリコン基板をキャリアに接着する工程は、キャリアを接着層で覆う工程と、接着層の上に少なくとも1つの太陽電池基板を配置する工程とを含む請求項1〜3のいずれかに記載の方法。
- 更に、少なくとも1つの太陽電池基板を接着層の上に配置する前に、アニール工程が行われる請求項4に記載の方法。
- アニール工程は、100℃〜150℃の温度で、5分〜15分間加熱する工程を含む請求項5に記載の方法。
- 更に、少なくとも1つの太陽電池基板を接着層の上に接着した後、脱ガス工程が行われる請求項1〜6のいずれかに記載の方法。
- 脱ガス工程は、150℃〜200℃の温度で、15分〜60分間加熱する工程を含む請求項7に記載の方法。
- 少なくとも1つの太陽電池基板の表面部分を除去する工程は、少なくとも太陽電池基板の裏側において、1マイクロメータから5マイクロメータの厚さの表面部分を化学的にエッチングする工程を含む請求項1〜8のいずれかに記載の方法。
- 少なくとも1つの太陽電池基板の表面部分を除去する工程は、TMAH水溶液中でエッチングする工程を含む請求項1〜9のいずれかに記載の方法。
- エッチング工程は、1%〜5%のTMAHを含む溶液中で、20℃〜50℃の温度でエッチングする工程を含む請求項10に記載の方法。
- 更に、イントリンシックなa−Si:Hパッシベーション層を少なくとも1つの太陽電池基板上に堆積する工程を含む請求項1〜11のいずれかに記載の方法。
- 少なくとも1つの結晶シリコン太陽電池基板をキャリアに接着する工程は、複数の結晶シリコン太陽電池基板をキャリアに接着する工程を含む請求項1〜12に記載の方法。
- キャリアおよび接着層は、太陽電池基板の吸収スペクトル内の太陽スペクトルの波長範囲において光学的に透明である請求項1〜13のいずれかに記載の方法。
- 接着層は、シリコーン接着層である請求項1〜14のいずれかに記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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EP13189576 | 2013-10-21 | ||
EP13189576.5 | 2013-10-21 |
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JP2015082659A true JP2015082659A (ja) | 2015-04-27 |
JP6397273B2 JP6397273B2 (ja) | 2018-09-26 |
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US (1) | US9123859B2 (ja) |
EP (1) | EP2863442B1 (ja) |
JP (1) | JP6397273B2 (ja) |
Cited By (1)
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CN110767774A (zh) * | 2019-10-14 | 2020-02-07 | 上海理想万里晖薄膜设备有限公司 | TOPCon太阳能电池的制造方法及其非晶硅晶化的方法和设备 |
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WO2017100393A2 (en) * | 2015-12-09 | 2017-06-15 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
DE102016122251A1 (de) * | 2016-11-18 | 2018-05-24 | Infineon Technologies Austria Ag | Verfahren zum Bilden von Halbleiterbauelementen und Halbleiterbauelement |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1986003885A1 (en) * | 1984-12-24 | 1986-07-03 | Hughes Aircraft Company | Process for enhancing the adhesion of teflon used in advanced space solar cells and in encapsulated semiconductor devices and circuits |
WO2011064368A1 (en) * | 2009-11-30 | 2011-06-03 | Imec | Method for manufacturing photovoltaic modules comprising back-contact cells |
WO2013029890A2 (en) * | 2011-09-02 | 2013-03-07 | Dow Corning Corporation | Method of fabricating solar modules, and solar module obtained thereby |
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CN101842910B (zh) * | 2007-11-01 | 2013-03-27 | 株式会社半导体能源研究所 | 用于制造光电转换器件的方法 |
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2014
- 2014-09-01 JP JP2014177442A patent/JP6397273B2/ja not_active Expired - Fee Related
- 2014-09-05 EP EP14183776.5A patent/EP2863442B1/en not_active Not-in-force
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1986003885A1 (en) * | 1984-12-24 | 1986-07-03 | Hughes Aircraft Company | Process for enhancing the adhesion of teflon used in advanced space solar cells and in encapsulated semiconductor devices and circuits |
WO2011064368A1 (en) * | 2009-11-30 | 2011-06-03 | Imec | Method for manufacturing photovoltaic modules comprising back-contact cells |
WO2013029890A2 (en) * | 2011-09-02 | 2013-03-07 | Dow Corning Corporation | Method of fabricating solar modules, and solar module obtained thereby |
Non-Patent Citations (2)
Title |
---|
GOVAERTS JONATHAN ET AL.: "Development of a-Si:H/c-Si heterojunctions for the i2-module concept: Low-temperature passivation an", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. vol. 113, JPN6018005517, 28 February 2013 (2013-02-28), pages pages 52-60 * |
STECKENREITER VERENA ET AL.: "Qualification of encapsulation materials for module-level-processing", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. vol. 120, JPN6018005515, 23 July 2013 (2013-07-23), pages pages 396-401 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110767774A (zh) * | 2019-10-14 | 2020-02-07 | 上海理想万里晖薄膜设备有限公司 | TOPCon太阳能电池的制造方法及其非晶硅晶化的方法和设备 |
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Publication number | Publication date |
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EP2863442A1 (en) | 2015-04-22 |
US9123859B2 (en) | 2015-09-01 |
US20150111335A1 (en) | 2015-04-23 |
EP2863442B1 (en) | 2017-05-03 |
JP6397273B2 (ja) | 2018-09-26 |
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